G03F1/00	7	Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof<br><br><u>NOTE</u><br><br><br>  In this group, the first place priority rule is applied, i.e. at each hierarchical level, in the absence of an indication to the contrary, classification is made in the first appropriate place. 	G03F1/00	G03F1/00		1430
G03F1/20	8	Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof	G03F1/20	G03F1/20		909
G03F1/22	8	Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof	G03F1/22	G03F1/22		1538
G03F1/24	9	Reflection masks; Preparation thereof	G03F1/24	G03F1/24		1537
G03F1/26	8	Phase shift masks [PSM]; PSM blanks; Preparation thereof	G03F1/26	G03F1/26		1861
G03F1/28	9	with three or more diverse phases on the same PSM; Preparation thereof	G03F1/28	G03F1/28		146
G03F1/29	9	Rim PSM or outrigger PSM; Preparation thereof	G03F1/29	G03F1/29		278
G03F1/30	9	Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof	G03F1/30	G03F1/30		713
G03F1/32	9	Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof	G03F1/32	G03F1/32		1689
G03F1/34	9	Phase-edge PSM, e.g. chromeless PSM; Preparation thereof	G03F1/34	G03F1/34		343
G03F1/36	8	Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes	G03F1/36	G03F1/36		4041
G03F1/38	8	Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof	G03F1/38	G03F1/38		1664
G03F1/40	9	Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate	G03F1/40	G03F1/40		233
G03F1/42	9	Alignment or registration features, e.g. alignment marks on the mask substrates	G03F1/42	G03F1/42		847
G03F1/44	9	Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales	G03F1/44	G03F1/44		968
G03F1/46	9	Antireflective coatings	G03F1/46	G03F1/46		373
G03F1/48	9	Protective coatings	G03F1/48	G03F1/48		626
G03F1/50	8	Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof	G03F1/50	G03F1/50		1908
G03F1/52	8	Reflectors	G03F1/52	G03F1/52		240
G03F1/54	8	Absorbers, e.g. of opaque materials	G03F1/54	G03F1/54		1457
G03F1/56	9	Organic absorbers, e.g. of photo-resists	G03F1/56	G03F1/56		429
G03F1/58	9	having two or more different absorber layers, e.g. stacked multilayer absorbers	G03F1/58	G03F1/58		356
G03F1/60	8	Substrates	G03F1/60	G03F1/60		663
G03F1/62	8	Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof	G03F1/62	G03F1/62		1623
G03F1/64	9	characterised by the frames, e.g. structure or material, including bonding means therefor	G03F1/64	G03F1/64		904
G03F1/66	8	Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof	G03F1/66	G03F1/66		928
G03F1/68	8	Preparation processes not covered by groups G03F1/20 - G03F1/50	G03F1/68	G03F1/68		1499
G03F1/70	9	Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging	G03F1/70	G03F1/70		1682
G03F1/72	9	Repair or correction of mask defects	G03F1/72	G03F1/72		1265
G03F1/74	10	by charged particle beam [CPB], e.g. focused ion beam	G03F1/74	G03F1/74		360
G03F1/76	9	Patterning of masks by imaging	G03F1/76	G03F1/76		822
G03F1/78	10	by charged particle beam [CPB], e.g. electron beam patterning of masks	G03F1/78	G03F1/78		514
G03F1/80	9	Etching	G03F1/80	G03F1/80		1590
G03F1/82	9	Auxiliary processes, e.g. cleaning or inspecting	G03F1/82	G03F1/82		1025
G03F1/84	10	Inspecting	G03F1/84	G03F1/84		2367
G03F1/86	11	by charged particle beam [CPB]	G03F1/86	G03F1/86		181
G03F1/88	8	prepared by photographic processes for production of originals simulating relief	G03F1/88	G03F1/88		121
G03F1/90	8	prepared by montage processes	G03F1/90	G03F1/90		487
G03F1/92	8	prepared from printing surfaces	G03F1/92	G03F1/92		127
G03F3/00	7	Colour separation; Correction of tonal value (photographic copying apparatus in general G03B)	G03F3/00	G03F3/00		154
G03F3/02	8	by retouching	G03F3/02	G03F3/02		56
G03F3/04	8	by photographic means	G03F3/04	G03F3/04		248
G03F3/06	9	by masking	G03F3/06	G03F3/06		138
G03F3/10	8	Checking the colour or tonal value of separation negatives or positives	G03F3/10	G03F3/10		421
G03F3/101	9	{Colour or tonal value checking by non-photographic means or by means other than using non-impact printing methods or duplicating or marking methods covered by B41M5/00}	G03F3/10	G03F3/10		78
G03F3/102	9	{Lamination or delamination method or apparatus for colour proofing systems}	G03F3/10	G03F3/10		74
G03F3/103	9	{using tonable photoresist or photopolymerisable systems}	G03F3/10	G03F3/10		59
G03F3/105	9	{using electro photographic materials}	G03F3/10	G03F3/10		28
G03F3/106	9	{using non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, other than silicon containing compounds}	G03F3/10	G03F3/10		69
G03F3/107	9	{using silver halide photosensitive materials}	G03F3/10	G03F3/10		71
G03F3/108	9	{using a non-impact printing method, e.g. ink jet, using duplicating or marking methods covered by B41M5/00, e.g. by ablation or by thermographic means}	G03F3/10	G03F3/10		105
G03F5/00	7	Screening processes; Screens therefor {(plates or light sensitive layers with incorporated screen G03F7/004)}	G03F5/00	G03F5/00		280
G03F5/02	8	by projection methods (cameras G03B)	G03F5/02	G03F5/02		47
G03F5/04	9	changing the screen effect	G03F5/04	G03F5/04		40
G03F5/06	9	changing the diaphragm effect	G03F5/06	G03F5/06		24
G03F5/08	9	using line screens	G03F5/08	G03F5/08		13
G03F5/10	9	using cross-line screens	G03F5/10	G03F5/10		40
G03F5/12	9	using other screens, e.g. granulated screen	G03F5/12	G03F5/12		166
G03F5/14	8	by contact methods	G03F5/14	G03F5/14		92
G03F5/16	9	using grey half-tone screens	G03F5/16	G03F5/16		40
G03F5/18	9	using colour half-tone screens	G03F5/18	G03F5/18		17
G03F5/20	8	using screens for gravure printing	G03F5/20	G03F5/20		381
G03F5/22	8	combining several screens; Elimination of moir&#233;	G03F5/22	G03F5/22		106
G03F5/24	8	by multiple exposure, e.g. combined processes for line photo and screen	G03F5/24	G03F5/24		92
G03F7/00	7	Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K)	G03F7/00	G03F7/00		2650
G03F7/0002	8	{Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}	G03F7/00	G03F7/00		7320
G03F7/0005	8	{Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor}	G03F7/00	G03F7/00		1084
G03F7/0007	9	{Filters, e.g. additive colour filters; Components for display devices}	G03F7/00	G03F7/00		4886
G03F7/001	9	{Phase modulating patterns, e.g. refractive index patterns}	G03F7/00	G03F7/00		875
G03F7/0012	8	{Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials}	G03F7/00	G03F7/00		144
G03F7/0015	8	{Production of aperture devices, microporous systems or stamps}	G03F7/00	G03F7/00		329
G03F7/0017	8	{for the production of embossing, cutting or similar devices; for the production of casting means}	G03F7/00	G03F7/00		403
G03F7/002	8	{using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor}	G03F7/00	G03F7/00		608
G03F7/0022	9	{Devices or apparatus}	G03F7/00	G03F7/00		325
G03F7/0025	10	{characterised by means for coating the developer}	G03F7/00	G03F7/00		122
G03F7/0027	10	{characterised by pressure means}	G03F7/00	G03F7/00		66
G03F7/003	10	{characterised by storage means for the light sensitive material, e.g. cartridges}	G03F7/00	G03F7/00		37
G03F7/0032	10	{characterised by heat providing or glossing means}	G03F7/00	G03F7/00		79
G03F7/0035	8	{Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface}	G03F7/00	G03F7/00		1811
G03F7/0037	8	{Production of three-dimensional images}	G03F7/00	G03F7/00		1183
G03F7/004	8	Photosensitive materials (G03F7/12, G03F7/14 take precedence)	G03F7/004	G03F7/004		11850
G03F7/0041	9	{providing an etching agent upon exposure (G03F7/075 takes precedence; photolytic halogen compounds G03F7/0295)}	G03F7/004	G03F7/004		248
G03F7/0042	9	{with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence)}	G03F7/004	G03F7/004		1227
G03F7/0043	10	{Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence)}	G03F7/004	G03F7/004		696
G03F7/0044	10	{involving an interaction between the metallic and non-metallic component, e.g. photodope systems}	G03F7/004	G03F7/004		119
G03F7/0045	9	{with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}	G03F7/004	G03F7/004		8518
G03F7/0046	9	{with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}	G03F7/004	G03F7/004		3018
G03F7/0047	9	{characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing}	G03F7/004	G03F7/004		1688
G03F7/0048	9	{characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents}	G03F7/004	G03F7/004		1430
G03F7/008	9	Azides (G03F7/075 takes precedence)	G03F7/008	G03F7/008		246
G03F7/0085	10	{characterised by the non-macromolecular additives}	G03F7/008	G03F7/008		107
G03F7/012	10	Macromolecular azides; Macromolecular additives, e.g. binders {(G03F7/0085 takes precedence)}	G03F7/012	G03F7/012		181
G03F7/0125	11	{characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides}	G03F7/012	G03F7/012		183
G03F7/016	9	Diazonium salts or compounds (G03F7/075 takes precedence)	G03F7/016	G03F7/016		315
G03F7/0163	10	{Non ionic diazonium compounds, e.g. diazosulphonates; Precursors thereof, e.g. triazenes}	G03F7/016	G03F7/016		111
G03F7/0166	10	{characterised by the non-macromolecular additives}	G03F7/016	G03F7/016		97
G03F7/021	10	Macromolecular diazonium compounds; Macromolecular additives, e.g. binders {(G03F7/0166 takes precedence)}	G03F7/021	G03F7/021		220
G03F7/0212	11	{characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds}	G03F7/021	G03F7/021		219
G03F7/0215	12	{Natural gums; Proteins, e.g. gelatins; Macromolecular carbohydrates, e.g. cellulose; Polyvinyl alcohol and derivatives thereof, e.g. polyvinylacetals}	G03F7/021	G03F7/021		91
G03F7/0217	12	{Polyurethanes; Epoxy resins}	G03F7/021	G03F7/021		72
G03F7/022	9	Quinonediazides (G03F7/075 takes precedence)	G03F7/022	G03F7/022		1013
G03F7/0223	10	{Iminoquinonediazides; Para-quinonediazides}	G03F7/022	G03F7/022		42
G03F7/0226	10	{characterised by the non-macromolecular additives}	G03F7/022	G03F7/022		982
G03F7/023	10	Macromolecular quinonediazides; Macromolecular additives, e.g. binders {(G03F7/0226 takes precedence)}	G03F7/023	G03F7/023		635
G03F7/0233	11	{characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides}	G03F7/023	G03F7/023		1372
G03F7/0236	12	{Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins}	G03F7/023	G03F7/023		642
G03F7/025	9	Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds (G03F7/075 takes precedence)	G03F7/025	G03F7/025		212
G03F7/027	9	Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence)	G03F7/027	G03F7/027		8153
G03F7/0275	10	{with dithiol or polysulfide compounds}	G03F7/027	G03F7/027		268
G03F7/028	10	with photosensitivity-increasing substances, e.g. photoinitiators	G03F7/028	G03F7/028		2576
G03F7/0285	11	{Silver salts, e.g. a latent silver salt image}	G03F7/028	G03F7/028		293
G03F7/029	11	Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur	G03F7/029	G03F7/029		1613
G03F7/0295	12	{Photolytic halogen compounds}	G03F7/029	G03F7/029		366
G03F7/031	11	Organic compounds not covered by group G03F7/029	G03F7/031	G03F7/031		3223
G03F7/032	10	with binders	G03F7/032	G03F7/032		2057
G03F7/0325	11	{the binders being polysaccharides, e.g. cellulose}	G03F7/032	G03F7/032		93
G03F7/033	11	the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers	G03F7/033	G03F7/033		3648
G03F7/035	11	the binders being polyurethanes	G03F7/035	G03F7/035		302
G03F7/037	11	the binders being polyamides or polyimides	G03F7/037	G03F7/037		833
G03F7/038	9	Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021)	G03F7/038	G03F7/038		5586
G03F7/0381	10	{using a combination of a phenolic resin and a polyoxyethylene resin}	G03F7/038	G03F7/038		72
G03F7/0382	10	{the macromolecular compound being present in a chemically amplified negative photoresist composition}	G03F7/038	G03F7/038		2355
G03F7/0384	10	{with ethylenic or acetylenic bands in the main chain of the photopolymer}	G03F7/038	G03F7/038		263
G03F7/0385	10	{using epoxidised novolak resin}	G03F7/038	G03F7/038		267
G03F7/0387	10	{Polyamides or polyimides}	G03F7/038	G03F7/038		793
G03F7/0388	10	{with ethylenic or acetylenic bands in the side chains of the photopolymer}	G03F7/038	G03F7/038		1952
G03F7/039	9	Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023)	G03F7/039	G03F7/039		4952
G03F7/0392	10	{the macromolecular compound being present in a chemically amplified positive photoresist composition}	G03F7/039	G03F7/039		4030
G03F7/0395	11	{the macromolecular compound having a backbone with alicyclic moieties}	G03F7/039	G03F7/039		1103
G03F7/0397	11	{the macromolecular compound having an alicyclic moiety in a side chain}	G03F7/039	G03F7/039		4114
G03F7/04	9	Chromates (G03F7/075 takes precedence)	G03F7/04	G03F7/04		664
G03F7/06	9	Silver salts (G03F7/075 takes precedence)	G03F7/06	G03F7/06		391
G03F7/063	10	{Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids}	G03F7/06	G03F7/06		254
G03F7/066	11	{Organic derivatives of bivalent sulfur, e.g. onium derivatives}	G03F7/06	G03F7/06		85
G03F7/07	10	used for diffusion transfer {(G03F7/063 takes precedence)}	G03F7/07	G03F7/07		442
G03F7/075	9	Silicon-containing compounds	G03F7/075	G03F7/075		780
G03F7/0751	10	{used as adhesion-promoting additives or as means to improve adhesion}	G03F7/075	G03F7/075		317
G03F7/0752	10	{in non photosensitive layers or as additives, e.g. for dry lithography}	G03F7/075	G03F7/075		843
G03F7/0754	10	{Non-macromolecular compounds containing silicon-to-silicon bonds (G03F7/0752 takes precedence)}	G03F7/075	G03F7/075		112
G03F7/0755	10	{Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)}	G03F7/075	G03F7/075		897
G03F7/0757	10	{Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)}	G03F7/075	G03F7/075		1943
G03F7/0758	11	{with silicon- containing groups in the side chains}	G03F7/075	G03F7/075		899
G03F7/085	9	Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives (G03F7/075 takes precedence)	G03F7/085	G03F7/085		346
G03F7/09	9	characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N)	G03F7/09	G03F7/09		974
G03F7/091	10	{characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement}	G03F7/09	G03F7/09		2780
G03F7/092	10	{characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means}	G03F7/09	G03F7/09		538
G03F7/093	10	{characterised by antistatic means, e.g. for charge depletion}	G03F7/09	G03F7/09		150
G03F7/094	10	{Multilayer resist systems, e.g. planarising layers}	G03F7/09	G03F7/09		1629
G03F7/095	10	having more than one photosensitive layer (G03F7/075 takes precedence)	G03F7/095	G03F7/095		1234
G03F7/0952	11	{comprising silver halide or silver salt based image forming systems, e.g. for camera speed exposure}	G03F7/095	G03F7/095		106
G03F7/0955	11	{one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds}	G03F7/095	G03F7/095		174
G03F7/0957	11	{with sensitive layers on both sides of the substrate}	G03F7/095	G03F7/095		54
G03F7/105	10	having substances, e.g. indicators, for forming visible images	G03F7/105	G03F7/105		2641
G03F7/11	10	having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091&#160;-&#160;G03F7/093, B41N3/03 take precedence)}	G03F7/11	G03F7/11		4209
G03F7/115	10	having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing	G03F7/115	G03F7/115		221
G03F7/12	8	Production of screen printing forms or similar printing forms, e.g. stencils	G03F7/12	G03F7/12		983
G03F7/14	8	Production of collotype printing forms	G03F7/14	G03F7/14		104
G03F7/16	8	Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74)	G03F7/16	G03F7/16		3824
G03F7/161	9	{using a previously coated surface, e.g. by stamping or by transfer lamination}	G03F7/16	G03F7/16		594
G03F7/162	9	{Coating on a rotating support, e.g. using a whirler or a spinner}	G03F7/16	G03F7/16		3135
G03F7/164	9	{using electric, electrostatic or magnetic means; powder coating}	G03F7/16	G03F7/16		191
G03F7/165	9	{Monolayers, e.g. Langmuir-Blodgett}	G03F7/16	G03F7/16		287
G03F7/167	9	{from the gas phase, by plasma deposition (G03F7/2035 takes precedence)}	G03F7/16	G03F7/16		330
G03F7/168	9	{Finishing the coated layer, e.g. drying, baking, soaking}	G03F7/16	G03F7/16		3248
G03F7/18	9	Coating curved surfaces	G03F7/18	G03F7/18		271
G03F7/20	8	Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00)	G03F7/20	G03F7/20		8913
G03F7/2002	9	{with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image}	G03F7/20	G03F7/20		1179
G03F7/2004	10	{characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light}	G03F7/20	G03F7/20		2675
G03F7/2006	11	{using coherent light; using polarised light}	G03F7/20	G03F7/20		518
G03F7/2008	10	{characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used}	G03F7/20	G03F7/20		476
G03F7/201	10	{characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask}	G03F7/20	G03F7/20		398
G03F7/2012	10	{using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps}	G03F7/20	G03F7/20		539
G03F7/2014	10	{Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame}	G03F7/20	G03F7/20		618
G03F7/2016	11	{Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing}	G03F7/20	G03F7/20		147
G03F7/2018	12	{Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing}	G03F7/20	G03F7/20		304
G03F7/202	12	{Masking pattern being obtained by thermal means, e.g. laser ablation}	G03F7/20	G03F7/20		519
G03F7/2022	9	{Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure}	G03F7/20	G03F7/20		2015
G03F7/2024	10	{of the already developed image}	G03F7/20	G03F7/20		328
G03F7/2026	10	{for the removal of unwanted material, e.g. image or background correction}	G03F7/20	G03F7/20		119
G03F7/2028	11	{of an edge bead on wafers}	G03F7/20	G03F7/20		333
G03F7/203	10	{comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation}	G03F7/20	G03F7/20		410
G03F7/2032	10	{Simultaneous exposure of the front side and the backside}	G03F7/20	G03F7/20		224
G03F7/2035	9	{simultaneous coating and exposure; using a belt mask, e.g. endless}	G03F7/20	G03F7/20		110
G03F7/2037	9	{Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation}	G03F7/20	G03F7/20		377
G03F7/2039	10	{X-ray radiation}	G03F7/20	G03F7/20		244
G03F7/2041	9	{in the presence of a fluid, e.g. immersion; using fluid cooling means}	G03F7/20	G03F7/20		2091
G03F7/2043	10	{with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists}	G03F7/20	G03F7/20		153
G03F7/2045	9	{using originals with apertures, e.g. stencil exposure masks}	G03F7/20	G03F7/20		78
G03F7/2047	10	{Exposure with radiation other than visible light or UV light, e.g. shadow printing, proximity printing}	G03F7/20	G03F7/20		79
G03F7/2049	9	{using a cantilever}	G03F7/20	G03F7/20		76
G03F7/2051	9	{Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source (G03F7/70 takes precedence)}	G03F7/20	G03F7/20		521
G03F7/2053	10	{using a laser (ablative removal B41C)}	G03F7/20	G03F7/20		873
G03F7/2055	11	{for the production of printing plates; Exposure of liquid photohardening compositions}	G03F7/20	G03F7/20		330
G03F7/2057	10	{using an addressed light valve, e.g. a liquid crystal device}	G03F7/20	G03F7/20		283
G03F7/2059	10	{using a scanning corpuscular radiation beam, e.g. an electron beam}	G03F7/20	G03F7/20		726
G03F7/2061	11	{Electron scattering (proximity) correction or prevention methods}	G03F7/20	G03F7/20		104
G03F7/2063	11	{for the production of exposure masks or reticles}	G03F7/20	G03F7/20		441
G03F7/2065	11	{using corpuscular radiation other than electron beams}	G03F7/20	G03F7/20		67
G03F7/213	9	Exposing with the same light pattern different positions of the same surface at the same time {(G03F7/70 takes precedence)}	G03F7/213	G03F7/213		40
G03F7/22	9	Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)}	G03F7/22	G03F7/22		333
G03F7/24	9	Curved surfaces {(G03F7/70 takes precedence)}	G03F7/24	G03F7/24		635
G03F7/26	8	Processing photosensitive materials; Apparatus therefor (G03F7/12&#160;-&#160;G03F7/24 take precedence)	G03F7/26	G03F7/26		2566
G03F7/265	9	{Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation}	G03F7/26	G03F7/26		476
G03F7/28	9	for obtaining powder images (G03F3/10 takes precedence)	G03F7/28	G03F7/28		240
G03F7/30	9	Imagewise removal using liquid means	G03F7/30	G03F7/30		2207
G03F7/3007	10	{combined with electrical means, e.g. force fields}	G03F7/30	G03F7/30		28
G03F7/3014	10	{combined with ultrasonic means}	G03F7/30	G03F7/30		61
G03F7/3021	10	{from a wafer supported on a rotating chuck}	G03F7/30	G03F7/30		898
G03F7/3028	11	{characterised by means for on-wafer monitoring of the processing}	G03F7/30	G03F7/30		113
G03F7/3035	10	{from printing plates fixed on a cylinder or on a curved surface; from printing cylinders}	G03F7/30	G03F7/30		177
G03F7/3042	10	{from printing plates transported horizontally through the processing stations}	G03F7/30	G03F7/30		301
G03F7/305	11	{characterised by the brushing or rubbing means}	G03F7/30	G03F7/30		69
G03F7/3057	11	{characterised by the processing units other than the developing unit, e.g. washing units}	G03F7/30	G03F7/30		234
G03F7/3064	11	{characterised by the transport means or means for confining the different units, e.g. to avoid the overflow}	G03F7/30	G03F7/30		121
G03F7/3071	11	{Process control means, e.g. for replenishing}	G03F7/30	G03F7/30		211
G03F7/3078	11	{Processing different kinds of plates, e.g. negative and positive plates, in the same machine}	G03F7/30	G03F7/30		43
G03F7/3085	10	{from plates or webs transported vertically; from plates suspended or immersed vertically in the processing unit}	G03F7/30	G03F7/30		79
G03F7/3092	10	{Recovery of material; Waste processing}	G03F7/30	G03F7/30		300
G03F7/32	10	Liquid compositions therefor, e.g. developers	G03F7/32	G03F7/32		1957
G03F7/322	11	{Aqueous alkaline compositions}	G03F7/32	G03F7/32		1909
G03F7/325	11	{Non-aqueous compositions}	G03F7/32	G03F7/32		1327
G03F7/327	12	{Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts}	G03F7/32	G03F7/32		166
G03F7/34	9	Imagewise removal by selective transfer, e.g. peeling away	G03F7/34	G03F7/34		497
G03F7/343	10	{Lamination or delamination methods or apparatus for photolitographic photosensitive material}	G03F7/34	G03F7/34		152
G03F7/346	10	{using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds}	G03F7/34	G03F7/34		155
G03F7/36	9	Imagewise removal not covered by groups G03F7/30&#160;-&#160;G03F7/34, e.g. using gas streams, using plasma	G03F7/36	G03F7/36		647
G03F7/38	9	Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)}	G03F7/38	G03F7/38		2450
G03F7/40	9	Treatment after imagewise removal, e.g. baking	G03F7/40	G03F7/40		4803
G03F7/405	10	{Treatment with inorganic or organometallic reagents after imagewise removal}	G03F7/40	G03F7/40		694
G03F7/42	9	Stripping or agents therefor<br><br><u>NOTE</u><br><br> Stripping involving the use of a combination of means, e.g. plasma and radiation, is classified in group G03F7/42 only 	G03F7/42	G03F7/42		1427
G03F7/421	10	{using biological means only, e.g. enzymes}	G03F7/42	G03F7/42		11
G03F7/422	10	{using liquids only (G03F7/421 takes precedence)}	G03F7/42	G03F7/42		1207
G03F7/423	11	{containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds}	G03F7/42	G03F7/42		649
G03F7/425	11	{containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen}	G03F7/42	G03F7/42		1425
G03F7/426	11	{containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides}	G03F7/42	G03F7/42		612
G03F7/427	10	{using plasma means only}	G03F7/42	G03F7/42		1049
G03F7/428	10	{using ultrasonic means only}	G03F7/42	G03F7/42		50
G03F7/70	8	{Microphotolithographic exposure; Apparatus therefor (photo-masks G03F1/00)}<br><br><u>WARNING</u><br>Group G03F7/70 is incomplete pending reclassification of documents from group G03F7/70375. <br>Groups G03F7/70375 and G03F7/70 should be considered in order to perform a complete search.	G03F7/00	G03F7/70		745
G03F7/70008	9	{Production of exposure light, i.e. light sources}	G03F7/00	G03F7/70		606
G03F7/70016	10	{by discharge lamps}	G03F7/00	G03F7/70		278
G03F7/70025	10	{by lasers}	G03F7/00	G03F7/70		1083
G03F7/70033	10	{by plasma extreme ultraviolet [EUV] sources}	G03F7/00	G03F7/70		2287
G03F7/70041	10	{by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control}	G03F7/00	G03F7/70		425
G03F7/7005	10	{by multiple sources, e.g. light-emitting diodes [LED] or light source arrays (addressable array sources specially adapted to produce patterns without a mask G03F7/70391)}	G03F7/00	G03F7/70		411
G03F7/70058	9	{Mask illumination systems}	G03F7/00	G03F7/70		1715
G03F7/70066	10	{Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds}	G03F7/00	G03F7/70		613
G03F7/70075	10	{Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly&apos;s eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection}	G03F7/00	G03F7/70		1293
G03F7/70083	10	{Non-homogeneous intensity distribution in the mask plane}	G03F7/00	G03F7/70		197
G03F7/70091	10	{Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]}	G03F7/00	G03F7/70		843
G03F7/701	11	{Off-axis setting using an aperture}	G03F7/00	G03F7/70		330
G03F7/70108	11	{Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides}	G03F7/00	G03F7/70		331
G03F7/70116	11	{Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets}	G03F7/00	G03F7/70		711
G03F7/70125	10	{Use of illumination settings tailored to particular mask patterns (details of setting means G03F7/70091)}	G03F7/00	G03F7/70		443
G03F7/70133	10	{Measurement of illumination distribution, in pupil plane or field plane}	G03F7/00	G03F7/70		270
G03F7/70141	10	{Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system}	G03F7/00	G03F7/70		709
G03F7/7015	10	{Details of optical elements}	G03F7/00	G03F7/70		708
G03F7/70158	11	{Diffractive optical elements}	G03F7/00	G03F7/70		321
G03F7/70166	11	{Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides}	G03F7/00	G03F7/70		243
G03F7/70175	11	{Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source}	G03F7/00	G03F7/70		414
G03F7/70183	11	{Zoom systems for adjusting beam diameter}	G03F7/00	G03F7/70		98
G03F7/70191	10	{Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like}<br><br><u>NOTE</u><br><br>Wavelength or polarisation control is further classified in groups G03F7/70566, G03F7/70575.	G03F7/00	G03F7/70		1275
G03F7/702	10	{Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems}	G03F7/00	G03F7/70		898
G03F7/70208	10	{Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems}	G03F7/00	G03F7/70		259
G03F7/70216	9	{Mask projection systems}	G03F7/00	G03F7/70		683
G03F7/70225	10	{Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements}<br><br><u>NOTE</u><br><br>Catadioptric systems are further classified in group G02B17/0892.	G03F7/00	G03F7/70		665
G03F7/70233	10	{Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems}<br><br><u>NOTE</u><br><br>Further aspects of catoptric systems are classified in group G02B17/06.	G03F7/00	G03F7/70		797
G03F7/70241	10	{Optical aspects of refractive lens systems, i.e. comprising only refractive elements}<br><br><u>NOTE</u><br><br>Further aspects of refractive systems are classified in group G02B13/143.	G03F7/00	G03F7/70		713
G03F7/7025	10	{Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof}	G03F7/00	G03F7/70		269
G03F7/70258	10	{Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system}	G03F7/00	G03F7/70		1266
G03F7/70266	11	{Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction}	G03F7/00	G03F7/70		443
G03F7/70275	10	{Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems}	G03F7/00	G03F7/70		1136
G03F7/70283	10	{Mask effects on the imaging process}	G03F7/00	G03F7/70		846
G03F7/70291	11	{Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices}	G03F7/00	G03F7/70		1283
G03F7/703	10	{Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates}	G03F7/00	G03F7/70		177
G03F7/70308	10	{Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift}<br><br><u>NOTE</u><br><br> Wavelength or polarisation control is further classified in groups G03F7/70566, G03F7/70575.	G03F7/00	G03F7/70		885
G03F7/70316	10	{Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements}<br><br><u>NOTE</u><br><br>Particular optical materials are further classified in group G03F7/70958.<br>Multilayer reflectors for X-ray or EUV lithography are further classified in group G21K1/062.	G03F7/00	G03F7/70		658
G03F7/70325	10	{Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses}	G03F7/00	G03F7/70		225
G03F7/70333	11	{Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]}	G03F7/00	G03F7/70		173
G03F7/70341	10	{Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply (chemical composition of immersion liquids G03F7/2041)}	G03F7/00	G03F7/70		1808
G03F7/7035	10	{Proximity or contact printers}	G03F7/00	G03F7/70		537
G03F7/70358	10	{Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging}	G03F7/00	G03F7/70		2267
G03F7/70366	11	{Rotary scanning}	G03F7/00	G03F7/70		85
G03F7/70375	9	{Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation}<br><br><u>WARNING</u><br>Group G03F7/70375 is impacted by reclassification into group G03F7/70.<br>Groups G03F7/70375 and G03F7/70 should be considered in order to perform a complete search.	G03F7/00	G03F7/70		287
G03F7/70383	9	{Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams (maskless lithography using a programmable mask G03F7/70291)}	G03F7/00	G03F7/70		1120
G03F7/70391	10	{Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays}	G03F7/00	G03F7/70		298
G03F7/704	10	{Scanned exposure beam, e.g. raster-, rotary- and vector scanning (mask projection exposure involving relative movement of patterned beam and workpiece during imaging G03F7/70358)}	G03F7/00	G03F7/70		624
G03F7/70408	9	{Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect}	G03F7/00	G03F7/70		633
G03F7/70416	9	{2.5D lithography}<br><br><u>NOTE</u><br><br>Apparatus for photolithographical production of three-dimensional images are further classified in group G03F7/0037<br><br><u>WARNING</u><br>Group G03F7/70416 is impacted by reclassification into groups B29C64/00 - B29C64/40.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		306
G03F7/70425	9	{Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning}	G03F7/00	G03F7/70		1148
G03F7/70433	10	{Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors}	G03F7/00	G03F7/70		1517
G03F7/70441	11	{Optical proximity correction [OPC]}	G03F7/00	G03F7/70		1575
G03F7/7045	10	{Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam}	G03F7/00	G03F7/70		364
G03F7/70458	10	{Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus}	G03F7/00	G03F7/70		171
G03F7/70466	10	{Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}	G03F7/00	G03F7/70		1567
G03F7/70475	10	{Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display}	G03F7/00	G03F7/70		611
G03F7/70483	9	{Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring}<br><br><u>WARNING</u><br>Group G03F7/70483 is impacted by reclassification into groups G03F7/70605, G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		789
G03F7/70491	10	{Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes}<br><br><u>WARNING</u><br>Group G03F7/70491 is impacted by reclassification into groups G03F7/70605, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706845. <br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		722
G03F7/705	11	{Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions}<br><br><u>WARNING</u><br>Group G03F7/705 is impacted by reclassification into groups G03F7/70504, G03F7/70605, G03F7/70653, G03F7/70681 - G03F7/706833, G03F7/706835 - G03F7/706841, G03F7/706843 and G03F7/706845.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		2109
G03F7/70504	12	{Optical system modelling, e.g. lens heating models}<br><br><u>WARNING</u><br>Group G03F7/70504 is incomplete pending reclassification of documents from group G03F7/705. <br>Groups G03F7/705 and G03F7/70504 should be considered in order to perform a complete search.	G03F7/00	G03F7/70		71
G03F7/70508	11	{Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus}<br><br><u>WARNING</u><br>Group G03F7/70508 is impacted by reclassification into groups G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835, G03F7/706837 and G03F7/706845.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1175
G03F7/70516	11	{Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors}<br><br><u>WARNING</u><br>Group G03F7/70516 is impacted by reclassification into groups G03F7/70653, G03F7/70655 and G03F7/706845. <br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		748
G03F7/70525	11	{Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure}<br><br><u>WARNING</u><br>Group G03F7/70525 is impacted by reclassification into groups G03F7/706835 - G03F7/706841.<br>Groups G03F7/70525 and G03F7/706835 - G03F7/706841 should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1013
G03F7/70533	11	{Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow}<br><br><u>WARNING</u><br>Group G03F7/70533 is impacted by reclassification into groups G03F7/706835 - G03F7/706841.<br>Groups G03F7/70533 and G03F7/706835 - G03F7/706841 should be considered in order to perform a complete search.	G03F7/00	G03F7/70		404
G03F7/70541	11	{Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers}	G03F7/00	G03F7/70		280
G03F7/7055	10	{Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption}	G03F7/00	G03F7/70		933
G03F7/70558	11	{Dose control, i.e. achievement of a desired dose}	G03F7/00	G03F7/70		1359
G03F7/70566	11	{Polarisation control}	G03F7/00	G03F7/70		784
G03F7/70575	11	{Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength}	G03F7/00	G03F7/70		823
G03F7/70583	11	{Speckle reduction, e.g. coherence control or amplitude/wavefront splitting}	G03F7/00	G03F7/70		245
G03F7/70591	10	{Testing optical components}	G03F7/00	G03F7/70		724
G03F7/706	11	{Aberration measurement}	G03F7/00	G03F7/70		1092
G03F7/70605	10	{Workpiece metrology}<br><br><u>WARNING</u><br>Group G03F7/70605 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491 and G03F7/705.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		23
G03F7/70608	11	{Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist}<br><br><u>WARNING</u><br>Group G03F7/70608 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		461
G03F7/70616	11	{Monitoring the printed patterns}<br><br><u>WARNING</u><br>Group G03F7/70616 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70666, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851. <br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1519
G03F7/70625	12	{Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness}<br><br><u>WARNING</u><br>Group G03F7/70625 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		2232
G03F7/70633	12	{Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching}<br><br><u>WARNING</u><br>Group G03F7/70633 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		3827
G03F7/70641	12	{Focus}<br><br><u>WARNING</u><br>Group G03F7/70641 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1058
G03F7/7065	12	{Defects, e.g. optical inspection of patterned layer for defects}<br><br><u>WARNING</u><br>Group G03F7/7065 is impacted by reclassification into groups G03F7/70653, G03F7/70655, G03F7/70681, G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1000
G03F7/70653	11	{Metrology techniques}<br><br><u>WARNING</u><br>Group G03F7/70653 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/705, G03F7/70516, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641 and G03F7/7065.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		62
G03F7/70655	12	{Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]}<br><br><u>WARNING</u><br>Group G03F7/70655 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70516, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641 and G03F7/7065.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		143
G03F7/70658	12	{Electrical testing}<br><br><u>WARNING</u><br>Group G03F7/70658 is impacted by reclassification into groups G03F7/706833, G03F7/706835 - G03F7/706841, G03F7/706843 and G03F7/706845.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		119
G03F7/70666	12	{Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system}<br><br><u>WARNING</u><br>Group G03F7/70666 is incomplete pending reclassification of documents from group G03F7/70616. <br>Group G03F7/70666 is also impacted by reclassification into groups G03F7/70681 and G03F7/706835 - G03F7/706841.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		284
G03F7/70675	12	{Latent image, i.e. measuring the image of the exposed resist prior to development}<br><br><u>WARNING</u><br>Group G03F7/70675 is impacted by reclassification into groups G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841 and G03F7/706843 - G03F7/706851.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		102
G03F7/70681	11	{Metrology strategies}<br><br><u>WARNING</u><br>Group G03F7/70681 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70508, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065 and G03F7/70666.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		62
G03F7/70683	12	{Mark designs}<br><br><u>WARNING</u><br>Group G03F7/70683 is incomplete pending reclassification of documents from group G03F7/705.<br>Group G03F7/70683 is also impacted by reclassification into groups G03F7/706831, G03F7/706833, G03F7/706835 - G03F7/706841, G03F7/706843 and G03F7/706845.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		1237
G03F7/706831	12	{Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes}<br><br><u>WARNING</u><br>Group G03F7/706831 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70508, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70675 and G03F7/70683.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		105
G03F7/706833	12	{Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch}<br><br><u>WARNING</u><br>Group G03F7/706833 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70508, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70658, G03F7/70675 and G03F7/70683.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		104
G03F7/706835	11	{Metrology information management or control}<br><br><u>WARNING</u><br>Groups G03F7/706835 and G03F7/706837 are incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70508, G03F7/70525, G03F7/70533, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70658, G03F7/70666, G03F7/70675 and G03F7/70683.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		452
G03F7/706837	12	{Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis}	G03F7/00	G03F7/70		549
G03F7/706839	12	{Modelling, e.g. modelling scattering or solving inverse problems}<br><br><u>WARNING</u><br>Groups G03F7/706839 and G03F7/706841 are incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70525, G03F7/70533, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70658, G03F7/70666, G03F7/70675 and G03F7/70683.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		225
G03F7/706841	13	{Machine learning}	G03F7/00	G03F7/70		145
G03F7/706843	11	{Metrology apparatus}<br><br><u>WARNING</u><br>Group G03F7/706843 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/705, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70658, G03F7/70675 and G03F7/70683. <br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		189
G03F7/706845	12	{Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus}<br><br><u>WARNING</u><br>Group G03F7/706845 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70491, G03F7/705, G03F7/70508, G03F7/70516, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065, G03F7/70658, G03F7/70675 and G03F7/70683. <br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		456
G03F7/706847	12	{Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]}<br><br><u>WARNING</u><br>Group G03F7/706847 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065 and G03F7/70675.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		213
G03F7/706849	12	{Irradiation branch, e.g. optical system details, illumination mode or polarisation control}<br><br><u>WARNING</u><br>Group G03F7/706849 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065 and G03F7/70675.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		447
G03F7/706851	12	{Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection}<br><br><u>WARNING</u><br>Group G03F7/706851 is incomplete pending reclassification of documents from groups G03F7/70483, G03F7/70608, G03F7/70616, G03F7/70625, G03F7/70633, G03F7/70641, G03F7/7065 and G03F7/70675.<br>All groups listed in this Warning should be considered in order to perform a complete search.	G03F7/00	G03F7/70		455
G03F7/70691	9	{Handling of masks or workpieces}	G03F7/00	G03F7/70		1775
G03F7/707	10	{Chucks, e.g. chucking or un-chucking operations or structural details}	G03F7/00	G03F7/70		1863
G03F7/70708	11	{being electrostatic; Electrostatically deformable vacuum chucks}	G03F7/00	G03F7/70		402
G03F7/70716	10	{Stages}	G03F7/00	G03F7/70		2902
G03F7/70725	11	{control}	G03F7/00	G03F7/70		1452
G03F7/70733	10	{Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask}	G03F7/00	G03F7/70		1215
G03F7/70741	11	{Handling masks outside exposure position, e.g. reticle libraries}<br><br><u>NOTE</u><br><br>Protective means, e.g. containers, for masks, blanks or pellicles, are further classified in group G03F1/66.	G03F7/00	G03F7/70		896
G03F7/7075	11	{Handling workpieces outside exposure position, e.g. SMIF box}	G03F7/00	G03F7/70		691
G03F7/70758	10	{Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving}	G03F7/00	G03F7/70		1153
G03F7/70766	10	{Reaction force control means, e.g. countermass}	G03F7/00	G03F7/70		213
G03F7/70775	10	{Position control, e.g. interferometers or encoders for determining the stage position}	G03F7/00	G03F7/70		2098
G03F7/70783	10	{Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight}	G03F7/00	G03F7/70		704
G03F7/70791	10	{Large workpieces, e.g. glass substrates for flat panel displays or solar panels}	G03F7/00	G03F7/70		571
G03F7/708	9	{Construction of apparatus, e.g. environment aspects, hygiene aspects or materials}	G03F7/00	G03F7/70		439
G03F7/70808	10	{Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus}	G03F7/00	G03F7/70		930
G03F7/70816	11	{Bearings}	G03F7/00	G03F7/70		204
G03F7/70825	11	{Mounting of individual elements, e.g. mounts, holders or supports (workpiece or mask holders G03F7/707)}	G03F7/00	G03F7/70		1552
G03F7/70833	11	{Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground}	G03F7/00	G03F7/70		748
G03F7/70841	11	{Constructional issues related to vacuum environment, e.g. load-lock chamber}	G03F7/00	G03F7/70		482
G03F7/7085	10	{Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load}	G03F7/00	G03F7/70		2837
G03F7/70858	10	{Environment aspects, e.g. pressure of beam-path gas, temperature (pollution aspects G03F7/70916)}	G03F7/00	G03F7/70		1049
G03F7/70866	11	{of mask or workpiece}	G03F7/00	G03F7/70		740
G03F7/70875	12	{Temperature, e.g. temperature control of masks or workpieces via control of stage temperature}	G03F7/00	G03F7/70		1301
G03F7/70883	11	{of optical system}	G03F7/00	G03F7/70		505
G03F7/70891	12	{Temperature}	G03F7/00	G03F7/70		1470
G03F7/709	11	{Vibration, e.g. vibration detection, compensation, suppression or isolation}	G03F7/00	G03F7/70		1148
G03F7/70908	10	{Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus}	G03F7/00	G03F7/70		447
G03F7/70916	11	{Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps}	G03F7/00	G03F7/70		1699
G03F7/70925	11	{Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning}	G03F7/00	G03F7/70		1413
G03F7/70933	11	{Purge, e.g. exchanging fluid or gas to remove pollutants}	G03F7/00	G03F7/70		708
G03F7/70941	11	{Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss}	G03F7/00	G03F7/70		342
G03F7/7095	10	{Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient}	G03F7/00	G03F7/70		269
G03F7/70958	11	{Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties}	G03F7/00	G03F7/70		1003
G03F7/70966	12	{Birefringence}	G03F7/00	G03F7/70		191
G03F7/70975	10	{Assembly, maintenance, transport or storage of apparatus}	G03F7/00	G03F7/70		604
G03F7/70983	10	{Optical system protection, e.g. pellicles or removable covers for protection of mask}	G03F7/00	G03F7/70		852
G03F7/70991	10	{Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum}	G03F7/00	G03F7/70		741
G03F9/00	7	Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically (G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00)	G03F9/00	G03F9/00		1526
G03F2009/005	8	{for microlithography}	G03F9/00	G03F9/00		19
G03F9/70	8	{for microlithography (measuring printed patterns for monitoring overlay G03F7/70633 or focus G03F7/70641; projection system adjustment G03F7/70258; position control G03F7/70775)}	G03F9/00	G03F9/70		1492
G03F9/7003	9	{Alignment type or strategy, e.g. leveling, global alignment}	G03F9/00	G03F9/70		985
G03F9/7007	10	{Alignment other than original with workpiece}	G03F9/00	G03F9/70		74
G03F9/7011	11	{Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder}	G03F9/00	G03F9/70		422
G03F9/7015	11	{Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece}	G03F9/00	G03F9/70		231
G03F9/7019	10	{Calibration}	G03F9/00	G03F9/70		436
G03F9/7023	10	{Aligning or positioning in direction perpendicular to substrate surface}	G03F9/00	G03F9/70		395
G03F9/7026	11	{Focusing}	G03F9/00	G03F9/70		1086
G03F9/703	11	{Gap setting, e.g. in proximity printer}	G03F9/00	G03F9/70		138
G03F9/7034	11	{Leveling}	G03F9/00	G03F9/70		489
G03F9/7038	10	{Alignment for proximity or contact printer (proximity or contact printers per seG03F7/7035)}	G03F9/00	G03F9/70		146
G03F9/7042	10	{Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting (non-exposure lithographic processes per seG03F7/0002)}	G03F9/00	G03F9/70		377
G03F9/7046	10	{Strategy, e.g. mark, sensor or wavelength selection}	G03F9/00	G03F9/70		670
G03F9/7049	9	{Technique, e.g. interferometric}	G03F9/00	G03F9/70		880
G03F9/7053	10	{Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves}	G03F9/00	G03F9/70		146
G03F9/7057	11	{Gas flow, e.g. for focusing, leveling or gap setting}	G03F9/00	G03F9/70		78
G03F9/7061	11	{Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy}	G03F9/00	G03F9/70		66
G03F9/7065	9	{Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength}	G03F9/00	G03F9/70		420
G03F9/7069	9	{Alignment mark illumination, e.g. darkfield, dual focus}	G03F9/00	G03F9/70		266
G03F9/7073	9	{Alignment marks and their environment (marks specific to masks G03F1/42; marks specific to molds or stamps G03F7/0002; overlay marks G03F7/70633; marks applied to semiconductor devices H10W46/00)}	G03F9/00	G03F9/70		450
G03F9/7076	10	{Mark details, e.g. phase grating mark, temporary mark}	G03F9/00	G03F9/70		1636
G03F9/708	10	{Mark formation}	G03F9/00	G03F9/70		902
G03F9/7084	10	{Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels}	G03F9/00	G03F9/70		894
G03F9/7088	9	{Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection}	G03F9/00	G03F9/70		1924
G03F9/7092	9	{Signal processing}	G03F9/00	G03F9/70		414
G03F9/7096	9	{Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus}	G03F9/00	G03F9/70		248
