H10P10/00	7	Bonding of wafers, substrates or parts of devices<br><br><u>NOTE</u><br><br>This group covers bonding of wafers or substrates either<br>(i) before the step of making of any interconnections or (ii) before the step of packaging of devices, whichever step comes first.<br>Attention is drawn to the following:<br>aspects of bonding involving chips, package parts or interconnections, e.g. chip-on-chip bonding or chip-on-wafer bonding, are classified in subclass H10W, e.g. in group H10W80/00.<br><br><u>WARNING</u><br>Group H10P10/00 is impacted by reclassification into groups H10P14/00 and H10P95/00. <br>Groups H10P10/00, H10P14/00 and H10P95/00 should be considered in order to perform a complete search.	H10P10/00	H10P10/00		
H10P10/12	8	{Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)}<br><br><u>WARNING</u><br>Group H10P10/12 is incomplete pending reclassification of documents from group H10P90/00. Group H10P10/12 is also impacted by reclassification into groups H10P10/126, H10P10/128 - H10P10/1285, H10P54/52, H10P56/00, H10P90/1914 and H10P90/1916. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P10/00	H10P10/12		
H10P10/126	9	{characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry}<br><br><u>WARNING</u><br>Group H10P10/126 is incomplete pending reclassification of documents from groups H10P10/12, H10P90/1914 and H10P90/1916. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P10/00	H10P10/126		
H10P10/128	9	{by direct semiconductor to semiconductor bonding}<br><br><u>WARNING</u><br>Groups H10P10/128 and H10P10/1285 are incomplete pending reclassification of documents from groups H10P10/12, H10P90/1914 and H10P90/1916. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P10/00	H10P10/128		
H10P10/1285	10	{by bonding laterally separated doped regions to each other}	H10P10/00	H10P10/1285		
H10P10/14	8	{Bonding of semiconductor wafers to insulating substrates}<br><br><u>WARNING</u><br>Group H10P10/14 is incomplete pending reclassification of documents from groups H10P90/1914 and H10P90/1916. <br>Groups H10P90/1914, H10P90/1916 and H10P10/14 should be considered in order to perform a complete search.	H10P10/00	H10P10/14		
H10P14/00	7	Formation of materials, e.g. in the shape of layers or pillars<br><br><u>WARNING</u><br>Group H10P14/00 is incomplete pending reclassification of documents from group H10P10/00. <br>Groups H10P10/00 and H10P14/00 should be considered in order to perform a complete search.	H10P14/00	H10P14/00		
H10P14/20	8	of semiconductor materials	H10P14/20	H10P14/20		
H10P14/203	9	{using transformation of metal, e.g. oxidation or nitridation}	H10P14/20	H10P14/20		
H10P14/22	9	using physical deposition, e.g. vacuum deposition or sputtering	H10P14/22	H10P14/22		
H10P14/24	9	using chemical vapour deposition [CVD]	H10P14/24	H10P14/24		
H10P14/26	9	using liquid deposition	H10P14/26	H10P14/26		
H10P14/263	10	{using melted materials}	H10P14/26	H10P14/26		
H10P14/265	10	{using solutions}	H10P14/26	H10P14/26		
H10P14/27	9	{using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}	H10P14/20	H10P14/27		
H10P14/271	10	{characterised by the preparation of substrate for selective deposition}	H10P14/20	H10P14/271		
H10P14/272	11	{using mask materials other than SiO2 or SiN}	H10P14/20	H10P14/272		
H10P14/274	11	{using seed materials}	H10P14/20	H10P14/274		
H10P14/276	10	{Lateral overgrowth}	H10P14/20	H10P14/276		
H10P14/278	11	{Pendeoepitaxy}	H10P14/20	H10P14/278		
H10P14/279	10	{Vapour-liquid-solid growth}	H10P14/20	H10P14/279		
H10P14/29	9	{characterised by the substrates}<br><br><u>WARNING</u><br>Group H10P14/29 is impacted by reclassification into groups H10P14/2924 - H10P14/2925 and H10P14/2926. <br>Groups H10P14/29, H10P14/2924 - H10P14/2925 and H10P14/2926 should be considered in order to perform a complete search.	H10P14/20	H10P14/29		
H10P14/2901	10	{Materials}	H10P14/20	H10P14/2901		
H10P14/2902	11	{being Group IVA materials}	H10P14/20	H10P14/2902		
H10P14/2903	12	{Carbon, e.g. diamond-like carbon}	H10P14/20	H10P14/2903		
H10P14/2904	12	{Silicon carbide}	H10P14/20	H10P14/2904		
H10P14/2905	12	{Silicon, silicon germanium or germanium}	H10P14/20	H10P14/2905		
H10P14/2906	12	{including tin}	H10P14/20	H10P14/2906		
H10P14/2907	11	{being Group IIIA-VA materials}	H10P14/20	H10P14/2907		
H10P14/2908	12	{Nitrides}	H10P14/20	H10P14/2908		
H10P14/2909	12	{Phosphides}	H10P14/20	H10P14/2909		
H10P14/2911	12	{Arsenides}	H10P14/20	H10P14/2911		
H10P14/2912	12	{Antimonides}	H10P14/20	H10P14/2912		
H10P14/2913	11	{being Group IIB-VIA materials}	H10P14/20	H10P14/2913		
H10P14/2914	12	{Oxides}	H10P14/20	H10P14/2914		
H10P14/2915	12	{Sulfides}	H10P14/20	H10P14/2915		
H10P14/2916	12	{Selenides}	H10P14/20	H10P14/2916		
H10P14/2917	12	{Tellurides}	H10P14/20	H10P14/2917		
H10P14/2918	11	{being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913)}	H10P14/20	H10P14/2918		
H10P14/2919	11	{being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}	H10P14/20	H10P14/2919		
H10P14/2921	11	{being crystalline insulating materials}	H10P14/20	H10P14/2921		
H10P14/2922	11	{being non-crystalline insulating materials, e.g. glass or polymers}	H10P14/20	H10P14/2922		
H10P14/2923	11	{being conductive materials, e.g. metallic silicides}	H10P14/20	H10P14/2923		
H10P14/2924	10	{Structures}<br><br><u>WARNING</u><br>Groups H10P14/2924 and H10P14/2925 are incomplete pending reclassification of documents from group H10P14/29. <br>Groups H10P14/29, H10P14/2924 and H10P14/2925 should be considered in order to perform a complete search.	H10P14/20	H10P14/2924		
H10P14/2925	11	{Surface structures}	H10P14/20	H10P14/2925		
H10P14/2926	10	{Crystal orientations}<br><br><u>WARNING</u><br>Group H10P14/2926 is incomplete pending reclassification of documents from group H10P14/29. <br>Groups H10P14/29 and H10P14/2926 should be considered in order to perform a complete search.	H10P14/20	H10P14/2926		
H10P14/32	9	{characterised by intermediate layers between substrates and deposited layers}	H10P14/20	H10P14/32		
H10P14/3202	10	{Materials thereof}	H10P14/20	H10P14/3202		
H10P14/3204	11	{being Group IVA semiconducting materials}	H10P14/20	H10P14/3204		
H10P14/3206	12	{Carbon, e.g. diamond-like carbon}	H10P14/20	H10P14/3206		
H10P14/3208	12	{Silicon carbide}	H10P14/20	H10P14/3208		
H10P14/3211	12	{Silicon, silicon germanium or germanium}	H10P14/20	H10P14/3211		
H10P14/3212	12	{including tin}	H10P14/20	H10P14/3212		
H10P14/3214	11	{being Group IIIA-VA semiconductors}	H10P14/20	H10P14/3214		
H10P14/3216	12	{Nitrides}	H10P14/20	H10P14/3216		
H10P14/3218	12	{Phosphides}	H10P14/20	H10P14/3218		
H10P14/3221	12	{Arsenides}	H10P14/20	H10P14/3221		
H10P14/3222	12	{Antimonides}	H10P14/20	H10P14/3222		
H10P14/3224	11	{being Group IIB-VIA semiconductors}	H10P14/20	H10P14/3224		
H10P14/3226	12	{Oxides}	H10P14/20	H10P14/3226		
H10P14/3228	12	{Sulfides}	H10P14/20	H10P14/3228		
H10P14/3231	12	{Selenides}	H10P14/20	H10P14/3231		
H10P14/3232	12	{Tellurides}	H10P14/20	H10P14/3232		
H10P14/3234	11	{being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}	H10P14/20	H10P14/3234		
H10P14/3236	11	{being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}	H10P14/20	H10P14/3236		
H10P14/3238	11	{being insulating materials}	H10P14/20	H10P14/3238		
H10P14/3241	11	{being conductive materials}	H10P14/20	H10P14/3241		
H10P14/3242	10	{Structure}	H10P14/20	H10P14/3242		
H10P14/3244	11	{Layer structure}	H10P14/20	H10P14/3244		
H10P14/3246	12	{Monolayers}	H10P14/20	H10P14/3246		
H10P14/3248	12	{consisting of two layers}	H10P14/20	H10P14/3248		
H10P14/3251	12	{consisting of three or more layers}	H10P14/20	H10P14/3251		
H10P14/3252	13	{Alternating layers, e.g. superlattice}	H10P14/20	H10P14/3252		
H10P14/3254	12	{Graded layers}	H10P14/20	H10P14/3254		
H10P14/3256	11	{Microstructure}	H10P14/20	H10P14/3256		
H10P14/3258	10	{Crystal orientation}	H10P14/20	H10P14/3258		
H10P14/34	9	{Deposited materials, e.g. layers}	H10P14/20	H10P14/34		
H10P14/3402	10	{characterised by the chemical composition}	H10P14/20	H10P14/3402		
H10P14/3404	11	{being Group IVA materials}	H10P14/20	H10P14/3404		
H10P14/3406	12	{Carbon, e.g. diamond-like carbon}	H10P14/20	H10P14/3406		
H10P14/3408	12	{Silicon carbide}	H10P14/20	H10P14/3408		
H10P14/3411	12	{Silicon, silicon germanium or germanium}	H10P14/20	H10P14/3411		
H10P14/3412	12	{including tin}	H10P14/20	H10P14/3412		
H10P14/3414	11	{being group IIIA-VIA materials}	H10P14/20	H10P14/3414		
H10P14/3416	12	{Nitrides}	H10P14/20	H10P14/3416		
H10P14/3418	12	{Phosphides}	H10P14/20	H10P14/3418		
H10P14/3421	12	{Arsenides}	H10P14/20	H10P14/3421		
H10P14/3422	12	{Antimonides}	H10P14/20	H10P14/3422		
H10P14/3424	11	{being Group IIB-VIA materials}	H10P14/20	H10P14/3424		
H10P14/3426	12	{Oxides}	H10P14/20	H10P14/3426		
H10P14/3428	12	{Sulfides}	H10P14/20	H10P14/3428		
H10P14/3431	12	{Selenides}	H10P14/20	H10P14/3431		
H10P14/3432	12	{Tellurides}	H10P14/20	H10P14/3432		
H10P14/3434	11	{being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}	H10P14/20	H10P14/3434		
H10P14/3436	11	{being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds}	H10P14/20	H10P14/3436		
H10P14/3438	10	{Doping during depositing}	H10P14/20	H10P14/3438		
H10P14/3441	11	{Conductivity type}	H10P14/20	H10P14/3441		
H10P14/3442	12	{N-type}	H10P14/20	H10P14/3442		
H10P14/3444	12	{P-type}	H10P14/20	H10P14/3444		
H10P14/3446	12	{Transition metal elements; Rare earth elements}	H10P14/20	H10P14/3446		
H10P14/3448	11	{Delta-doping}	H10P14/20	H10P14/3448		
H10P14/3451	10	{Structure}	H10P14/20	H10P14/3451		
H10P14/3452	11	{Microstructure}	H10P14/20	H10P14/3452		
H10P14/3454	12	{Amorphous}	H10P14/20	H10P14/3454		
H10P14/3456	12	{Polycrystalline}	H10P14/20	H10P14/3456		
H10P14/3458	12	{Monocrystalline}	H10P14/20	H10P14/3458		
H10P14/3461	12	{Nanoparticles}	H10P14/20	H10P14/3461		
H10P14/3462	12	{Nanowires}	H10P14/20	H10P14/3462		
H10P14/3464	12	{Nanotubes}	H10P14/20	H10P14/3464		
H10P14/3466	10	{Crystal orientation}	H10P14/20	H10P14/3466		
H10P14/36	9	{characterised by treatments done before the formation of the materials}	H10P14/20	H10P14/36		
H10P14/3602	10	{In-situ cleaning}	H10P14/20	H10P14/3602		
H10P14/38	9	{characterised by treatments done after the formation of the materials}	H10P14/20	H10P14/38		
H10P14/3802	10	{Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}	H10P14/20	H10P14/3802		
H10P14/3804	11	{using crystallisation-inhibiting elements}	H10P14/20	H10P14/3804		
H10P14/3806	11	{using crystallisation-enhancing elements}	H10P14/20	H10P14/3806		
H10P14/3808	11	{using laser beams}	H10P14/20	H10P14/3808		
H10P14/381	12	{Beam shaping, e.g. using a mask}	H10P14/20	H10P14/381		
H10P14/3812	13	{Shape of mask}	H10P14/20	H10P14/3812		
H10P14/3814	12	{Continuous wave laser beam}	H10P14/20	H10P14/3814		
H10P14/3816	12	{Pulsed laser beam}	H10P14/20	H10P14/3816		
H10P14/3818	11	{using particle beams}	H10P14/20	H10P14/3818		
H10P14/382	11	{Scanning of a beam}	H10P14/20	H10P14/382		
H10P14/3822	10	{Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}	H10P14/20	H10P14/3822		
H10P14/3824	10	{Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD}	H10P14/20	H10P14/3824		
H10P14/40	8	of conductive or resistive materials	H10P14/40	H10P14/40		
H10P14/412	9	{Deposition of metallic or metal-silicide materials}	H10P14/40	H10P14/412		
H10P14/414	10	{of metal-silicide materials}	H10P14/40	H10P14/414		
H10P14/416	9	{of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}	H10P14/40	H10P14/416		
H10P14/418	9	{the conductive layers comprising transition metals}	H10P14/40	H10P14/418		
H10P14/42	9	using a gas or vapour<br><br><u>WARNING</u><br>Group H10P14/42 is impacted by reclassification into group H10P14/43. <br>Groups H10P14/42 and H10P14/43 should be considered in order to perform a complete search.	H10P14/42	H10P14/42		
H10P14/43	10	Chemical deposition, e.g. chemical vapour deposition [CVD]<br><br><u>WARNING</u><br>Group H10P14/43 is incomplete pending reclassification of documents from group H10P14/42. <br>Groups H10P14/42 and H10P14/43 should be considered in order to perform a complete search.	H10P14/43	H10P14/43		
H10P14/432	11	{using selective deposition}	H10P14/43	H10P14/43		
H10P14/44	10	Physical vapour deposition [PVD]<br><br><u>WARNING</u><br>Group H10P14/44 is impacted by reclassification into group H10P14/45. <br>Groups H10P14/44 and H10P14/45 should be considered in order to perform a complete search.	H10P14/44	H10P14/44		
H10P14/45	11	Sputtering<br><br><u>WARNING</u><br>Group H10P14/45 is incomplete pending reclassification of documents from group H10P14/44. <br>Groups H10P14/44 and H10P14/45 should be considered in order to perform a complete search.	H10P14/45	H10P14/45		
H10P14/46	9	using a liquid<br><br><u>WARNING</u><br>Group H10P14/46 is incomplete pending reclassification of documents from group H10P14/47. Group H10P14/46 is also impacted by reclassification into group H10P14/48. <br>Groups H10P14/47, H10P14/46 and H10P14/48 should be considered in order to perform a complete search.	H10P14/46	H10P14/46		
H10P14/47	10	Electrolytic deposition, i.e. electroplating; Electroless plating<br><br><u>WARNING</u><br>Group H10P14/47 is impacted by reclassification into groups H10P14/46, H10P14/48, H10D64/011, H10D64/012 and H10D64/013. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P14/47	H10P14/47		
H10P14/48	11	{Electroless plating}<br><br><u>WARNING</u><br>Group H10P14/48 is incomplete pending reclassification of documents from groups H10P14/46 and H10P14/47. <br>Groups H10P14/46, H10P14/47 and H10P14/48 should be considered in order to perform a complete search.	H10P14/47	H10P14/48		
H10P14/60	8	of insulating materials<br><br><u>WARNING</u><br>Group H10P14/60 is impacted by reclassification into groups H10P95/70 and H10P95/80. <br>Groups H10P14/60, H10P95/70 and H10P95/80 should be considered in order to perform a complete search.	H10P14/60	H10P14/60		
H10P14/61	9	using masks	H10P14/61	H10P14/61		
H10P14/63	9	{characterised by the formation processes}	H10P14/60	H10P14/63		
H10P14/6302	10	{Non-deposition formation processes}	H10P14/60	H10P14/6302		
H10P14/6304	11	{Formation by oxidation, e.g. oxidation of the substrate}	H10P14/60	H10P14/6304		
H10P14/6306	12	{of the semiconductor materials}	H10P14/60	H10P14/6306		
H10P14/6308	13	{of Group IV semiconductors}<br><br><u>WARNING</u><br>Group H10P14/6308 is impacted by reclassification into groups H10P14/6309, H10P14/6318, H10P14/6319, H10P14/6322 and H10P14/6324. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P14/60	H10P14/6308		
H10P14/6309	14	{of silicon in uncombined form, i.e. pure silicon}<br><br><u>WARNING</u><br>Group H10P14/6309 is incomplete pending reclassification of documents from group H10P14/6308. <br>Groups H10P14/6308 and H10P14/6309 should be considered in order to perform a complete search.	H10P14/60	H10P14/6309		
H10P14/6312	13	{of Group III-V semiconductors}	H10P14/60	H10P14/6312		
H10P14/6314	12	{of a metallic layer}	H10P14/60	H10P14/6314		
H10P14/6316	11	{Formation by nitridation, e.g. nitridation of the substrate}<br><br><u>WARNING</u><br>Group H10P14/6316 is impacted by reclassification into groups H10P14/6318, H10P14/6319, H10P14/6322 and H10P14/6324. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P14/60	H10P14/6316		
H10P14/6318	11	{Formation by simultaneous oxidation and nitridation}<br><br><u>WARNING</u><br>Group H10P14/6318 is incomplete pending reclassification of documents from groups H10P14/6308 and H10P14/6316. <br>Groups H10P14/6308, H10P14/6316 and H10P14/6318 should be considered in order to perform a complete search.	H10P14/60	H10P14/6318		
H10P14/6319	11	{Formation by plasma treatments, e.g. plasma oxidation of the substrate}<br><br><u>WARNING</u><br>Group H10P14/6319 is incomplete pending reclassification of documents from groups H10P14/6308 and H10P14/6316. <br>Groups H10P14/6308, H10P14/6316 and H10P14/6319 should be considered in order to perform a complete search.	H10P14/60	H10P14/6319		
H10P14/6322	11	{Formation by thermal treatments (formation by plasma treatment H10P14/6319)}<br><br><u>WARNING</u><br>Group H10P14/6322 is incomplete pending reclassification of documents from groups H10P14/6308 and H10P14/6316. <br>Groups H10P14/6308, H10P14/6316 and H10P14/6322 should be considered in order to perform a complete search.	H10P14/60	H10P14/6322		
H10P14/6324	11	{Formation by anodic treatments, e.g. anodic oxidation}<br><br><u>WARNING</u><br>Group H10P14/6324 is incomplete pending reclassification of documents from groups H10P14/6308 and H10P14/6316. <br>Groups H10P14/6308, H10P14/6316 and H10P14/6324 should be considered in order to perform a complete search.	H10P14/60	H10P14/6324		
H10P14/6326	10	{Deposition processes}	H10P14/60	H10P14/6326		
H10P14/6328	11	{Deposition from the gas or vapour phase}	H10P14/60	H10P14/6328		
H10P14/6329	12	{using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition}	H10P14/60	H10P14/6329		
H10P14/6332	12	{using thermal evaporation (formation of epitaxial layers by a deposition process H10P14/6349)}	H10P14/60	H10P14/6332		
H10P14/6334	12	{using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}	H10P14/60	H10P14/6334		
H10P14/6336	13	{in the presence of a plasma [PECVD]}	H10P14/60	H10P14/6336		
H10P14/6338	13	{the reactions being activated by other means than plasma or thermal, e.g. photo-CVD}	H10P14/60	H10P14/6338		
H10P14/6339	13	{deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}	H10P14/60	H10P14/6339		
H10P14/6342	11	{Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}	H10P14/60	H10P14/6342		
H10P14/6344	12	{using Langmuir-Blodgett techniques}	H10P14/60	H10P14/6344		
H10P14/6346	12	{using printing, e.g. ink-jet printing}	H10P14/60	H10P14/6346		
H10P14/6348	12	{Liquid ALD}	H10P14/60	H10P14/6348		
H10P14/6349	11	{Deposition of epitaxial materials}	H10P14/60	H10P14/6349		
H10P14/65	9	{characterised by treatments performed before or after the formation of the materials}	H10P14/60	H10P14/65		
H10P14/6502	10	{of treatments performed before formation of the materials}	H10P14/60	H10P14/6502		
H10P14/6504	11	{In-situ cleaning}	H10P14/60	H10P14/6504		
H10P14/6506	11	{Formation of intermediate materials}	H10P14/60	H10P14/6506		
H10P14/6508	11	{by exposure to a liquid}	H10P14/60	H10P14/6508		
H10P14/6509	11	{by exposure to electromagnetic radiation, e.g. UV light}	H10P14/60	H10P14/6509		
H10P14/6512	11	{by exposure to a gas or vapour}	H10P14/60	H10P14/6512		
H10P14/6514	12	{by exposure to a plasma}	H10P14/60	H10P14/6514		
H10P14/6516	10	{of treatments performed after formation of the materials}	H10P14/60	H10P14/6516		
H10P14/6518	11	{by introduction of substances into an already-existing insulating layer}	H10P14/60	H10P14/6518		
H10P14/6519	12	{the substance being oxygen}	H10P14/60	H10P14/6519		
H10P14/6522	13	{introduced into a nitride material, e.g. changing SiN to SiON}	H10P14/60	H10P14/6522		
H10P14/6524	12	{the substance being nitrogen}	H10P14/60	H10P14/6524		
H10P14/6526	13	{introduced into an oxide material, e.g. changing SiO to SiON}	H10P14/60	H10P14/6526		
H10P14/6528	11	{In-situ cleaning after layer formation, e.g. removing process residues}	H10P14/60	H10P14/6528		
H10P14/6529	11	{by exposure to a gas or vapour}	H10P14/60	H10P14/6529		
H10P14/6532	12	{by exposure to a plasma}	H10P14/60	H10P14/6532		
H10P14/6534	11	{by exposure to a liquid}	H10P14/60	H10P14/6534		
H10P14/6536	11	{by exposure to radiation, e.g. visible light}	H10P14/60	H10P14/6536		
H10P14/6538	12	{by exposure to UV light}	H10P14/60	H10P14/6538		
H10P14/6539	12	{by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}	H10P14/60	H10P14/6539		
H10P14/6542	12	{by using coherent radiation, e.g. using a laser}	H10P14/60	H10P14/6542		
H10P14/6544	11	{to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer}	H10P14/60	H10P14/6544		
H10P14/6546	11	{to change the surface groups of the insulating materials}	H10P14/60	H10P14/6546		
H10P14/6548	11	{by forming intermediate materials, e.g. capping layers or diffusion barriers}	H10P14/60	H10P14/6548		
H10P14/66	9	{characterised by the type of materials}	H10P14/60	H10P14/66		
H10P14/662	10	{Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}	H10P14/60	H10P14/662		
H10P14/665	10	{Porous materials}	H10P14/60	H10P14/665		
H10P14/668	10	{the materials being characterised by the deposition precursor materials}	H10P14/60	H10P14/668		
H10P14/6681	11	{the precursor containing a compound comprising Si}	H10P14/60	H10P14/6681		
H10P14/6682	12	{the compound being a silane, e.g. disilane, methylsilane or chlorosilane}	H10P14/60	H10P14/6682		
H10P14/6684	12	{the compound comprising silicon and oxygen}	H10P14/60	H10P14/6684		
H10P14/6686	13	{the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}	H10P14/60	H10P14/6686		
H10P14/6687	12	{the compound comprising silicon and nitrogen}	H10P14/60	H10P14/6687		
H10P14/6689	13	{the compound being a silazane}	H10P14/60	H10P14/6689		
H10P14/68	9	Organic materials, e.g. photoresists<br><br><u>WARNING</u><br>Group H10P14/68 is impacted by reclassification into group H10P14/69. <br>Groups H10P14/68 and H10P14/69 should be considered in order to perform a complete search.	H10P14/68	H10P14/68		
H10P14/683	10	{carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}<br><br><u>WARNING</u><br>Group H10P14/683 is impacted by reclassification into group H10P14/69. <br>Groups H10P14/683 and H10P14/69 should be considered in order to perform a complete search.	H10P14/68	H10P14/68		
H10P14/687	11	{the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene}<br><br><u>WARNING</u><br>Group H10P14/687 is impacted by reclassification into group H10P14/69. <br>Groups H10P14/687 and H10P14/69 should be considered in order to perform a complete search.	H10P14/68	H10P14/68		
H10P14/69	9	Inorganic materials<br><br><u>WARNING</u><br>Group H10P14/69 is incomplete pending reclassification of documents from groups H10P14/68, H10P14/683 and H10P14/687. Group H10P14/69 is also impacted by reclassification into group H10P14/694. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6902	10	{composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon}	H10P14/69	H10P14/69		
H10P14/6903	10	{containing silicon}<br><br><u>WARNING</u><br>Group H10P14/6903 is impacted by reclassification into groups H10P14/6921 and H10P14/6943. <br>Groups H10P14/6903, H10P14/6921 and H10P14/6943 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6905	11	{being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}	H10P14/69	H10P14/69		
H10P14/6906	10	{containing at least one metal element and not containing oxygen, e.g. metal carbides or metal carbonitrides (metal nitrides H10P14/6947)}<br><br><u>WARNING</u><br>Group H10P14/6906 is incomplete pending reclassification of documents from group H10P14/6938. <br>Groups H10P14/6938 and H10P14/6906 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6907	11	{characterised by the metal}<br><br><u>WARNING</u><br>Group H10P14/6907 is incomplete pending reclassification of documents from group H10P14/6939. <br>Groups H10P14/6939 and H10P14/6907 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6908	12	{the material containing aluminium}<br><br><u>WARNING</u><br>Group H10P14/6908 is incomplete pending reclassification of documents from group H10P14/69391. <br>Groups H10P14/69391 and H10P14/6908 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6909	12	{the material containing hafnium}<br><br><u>WARNING</u><br>Group H10P14/6909 is incomplete pending reclassification of documents from group H10P14/69392. <br>Groups H10P14/69392 and H10P14/6909 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/691	12	{the material containing tantalum}<br><br><u>WARNING</u><br>Group H10P14/691 is incomplete pending reclassification of documents from group H10P14/69393. <br>Groups H10P14/69393 and H10P14/691 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6911	12	{the material containing titanium}<br><br><u>WARNING</u><br>Group H10P14/6911 is incomplete pending reclassification of documents from group H10P14/69394. <br>Groups H10P14/69394 and H10P14/6911 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6912	12	{the material containing zirconium}<br><br><u>WARNING</u><br>Group H10P14/6912 is incomplete pending reclassification of documents from group H10P14/69395. <br>Groups H10P14/69395 and H10P14/6912 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6913	12	{the material containing at least one rare earth metal element}<br><br><u>WARNING</u><br>Group H10P14/6913 is incomplete pending reclassification of documents from group H10P14/69396. <br>Groups H10P14/69396 and H10P14/6913 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/6914	12	{the material containing two or more metal elements}<br><br><u>WARNING</u><br>Group H10P14/6914 is incomplete pending reclassification of documents from group H10P14/69397. <br>Groups H10P14/69397 and H10P14/6914 should be considered in order to perform a complete search.	H10P14/69	H10P14/69		
H10P14/692	10	composed of oxides, glassy oxides or oxide-based glasses	H10P14/692	H10P14/692		
H10P14/6921	11	{containing silicon}<br><br><u>WARNING</u><br>Group H10P14/6921 is incomplete pending reclassification of documents from group H10P14/6903. <br>Groups H10P14/6903 and H10P14/6921 should be considered in order to perform a complete search.	H10P14/692	H10P14/692		
H10P14/69215	12	{the material being a silicon oxide, e.g. SiO2}	H10P14/692	H10P14/692		
H10P14/6922	12	{the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}	H10P14/692	H10P14/692		
H10P14/6923	13	{the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}	H10P14/692	H10P14/692		
H10P14/6924	13	{the material being halogen doped silicon oxides, e.g. FSG}	H10P14/692	H10P14/692		
H10P14/6925	13	{the material comprising hydrogen silsesquioxane, e.g. HSQ}	H10P14/692	H10P14/692		
H10P14/6926	13	{the material comprising alkyl silsesquioxane, e.g. MSQ}	H10P14/692	H10P14/692		
H10P14/6927	13	{the material being a silicon oxynitride, e.g. SiON or SiON:H}	H10P14/692	H10P14/692		
H10P14/6928	12	{the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}	H10P14/692	H10P14/692		
H10P14/6929	13	{the material containing aluminium, e.g. AlSiOx}	H10P14/692	H10P14/692		
H10P14/693	13	{the material containing hafnium, e.g. HfSiOx or HfSiON}	H10P14/692	H10P14/69		
H10P14/6931	13	{the material containing tantalum, e.g. TaSiOx}	H10P14/692	H10P14/69		
H10P14/6932	13	{the material containing titanium, e.g. TiSiOx}	H10P14/692	H10P14/69		
H10P14/6933	13	{the material containing at least one rare earth element, e.g. silicate of scandium or silicate of yttrium}	H10P14/692	H10P14/69		
H10P14/6934	13	{the material containing zirconium, e.g. ZrSiOx}	H10P14/692	H10P14/69		
H10P14/6936	13	{the material containing two or more metal elements}	H10P14/692	H10P14/69		
H10P14/6938	11	{the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides}<br><br><u>WARNING</u><br>Group H10P14/6938 is impacted by reclassification into groups H10P14/6906 and H10P14/6947. <br>Groups H10P14/6938, H10P14/6906 and H10P14/6947 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/6939	12	{characterised by the metal}<br><br><u>WARNING</u><br>Group H10P14/6939 is impacted by reclassification into groups H10P14/6907 and H10P14/69471. <br>Groups H10P14/6939, H10P14/6907 and H10P14/69471 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69391	13	{the material containing aluminium, e.g. Al2O3}<br><br><u>WARNING</u><br>Group H10P14/69391 is impacted by reclassification into groups H10P14/6908 and H10P14/69472. <br>Groups H10P14/69391, H10P14/6908 and H10P14/69472 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69392	13	{the material containing hafnium, e.g. HfO2}<br><br><u>WARNING</u><br>Group H10P14/69392 is impacted by reclassification into groups H10P14/6909 and H10P14/69473. <br>Groups H10P14/69392, H10P14/6909 and H10P14/69473 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69393	13	{the material containing tantalum, e.g. Ta2O5}<br><br><u>WARNING</u><br>Group H10P14/69393 is impacted by reclassification into groups H10P14/691 and H10P14/69474. <br>Groups H10P14/69393, H10P14/691 and H10P14/69474 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69394	13	{the material containing titanium, e.g. TiO2}<br><br><u>WARNING</u><br>Group H10P14/69394 is impacted by reclassification into groups H10P14/6911 and H10P14/69475. <br>Groups H10P14/69394, H10P14/6911 and H10P14/69475 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69395	13	{the material containing zirconium, e.g. ZrO2}<br><br><u>WARNING</u><br>Group H10P14/69395 is impacted by reclassification into groups H10P14/6912 and H10P14/69476. <br>Groups H10P14/69395, H10P14/6912 and H10P14/69476 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69396	13	{the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}<br><br><u>WARNING</u><br>Group H10P14/69396 is impacted by reclassification into groups H10P14/6913 and H10P14/69477. <br>Groups H10P14/69396, H10P14/6913 and H10P14/69477 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69397	13	{the material containing two or more metal elements}<br><br><u>WARNING</u><br>Group H10P14/69397 is impacted by reclassification into groups H10P14/6914 and H10P14/69478. <br>Groups H10P14/69397, H10P14/6914 and H10P14/69478 should be considered in order to perform a complete search.	H10P14/692	H10P14/69		
H10P14/69398	12	{the material having a perovskite structure, e.g. BaTiO3}	H10P14/692	H10P14/69		
H10P14/694	10	composed of nitrides<br><br><u>WARNING</u><br>Group H10P14/694 is incomplete pending reclassification of documents from group H10P14/69. <br>Groups H10P14/69 and H10P14/694 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/6943	11	{containing silicon (silicon oxynitrides H10P14/6927)}<br><br><u>WARNING</u><br>Group H10P14/6943 is incomplete pending reclassification of documents from group H10P14/6903. <br>Groups H10P14/6903 and H10P14/6943 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69433	12	{the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}	H10P14/694	H10P14/694		
H10P14/6947	11	{the material containing at least one metal element and not containing oxygen, e.g. metal nitrides}<br><br><u>WARNING</u><br>Group H10P14/6947 is incomplete pending reclassification of documents from group H10P14/6938. <br>Groups H10P14/6938 and H10P14/6947 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69471	12	{characterised by the metal}<br><br><u>WARNING</u><br>Group H10P14/69471 is incomplete pending reclassification of documents from group H10P14/6939. <br>Groups H10P14/6939 and H10P14/69471 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69472	13	{the material containing aluminium}<br><br><u>WARNING</u><br>Group H10P14/69472 is incomplete pending reclassification of documents from group H10P14/69391. <br>Groups H10P14/69391 and H10P14/69472 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69473	13	{the material containing hafnium}<br><br><u>WARNING</u><br>Group H10P14/69473 is incomplete pending reclassification of documents from group H10P14/69392. <br>Groups H10P14/69392 and H10P14/69473 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69474	13	{the material containing tantalum}<br><br><u>WARNING</u><br>Group H10P14/69474 is incomplete pending reclassification of documents from group H10P14/69393. <br>Groups H10P14/69393 and H10P14/69474 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69475	13	{the material containing titanium}<br><br><u>WARNING</u><br>Group H10P14/69475 is incomplete pending reclassification of documents from group H10P14/69394. <br>Groups H10P14/69394 and H10P14/69475 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69476	13	{the material containing zirconium}<br><br><u>WARNING</u><br>Group H10P14/69476 is incomplete pending reclassification of documents from group H10P14/69395. <br>Groups H10P14/69395 and H10P14/69476 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69477	13	{the material containing at least one rare earth metal element}<br><br><u>WARNING</u><br>Group H10P14/69477 is incomplete pending reclassification of documents from group H10P14/69396. <br>Groups H10P14/69396 and H10P14/69477 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P14/69478	13	{the material containing two or more metal elements}<br><br><u>WARNING</u><br>Group H10P14/69478 is incomplete pending reclassification of documents from group H10P14/69397. <br>Groups H10P14/69397 and H10P14/69478 should be considered in order to perform a complete search.	H10P14/694	H10P14/694		
H10P30/00	7	Ion implantation into wafers, substrates or parts of devices<br><br><u>WARNING</u><br>Group H10P30/00 is incomplete pending reclassification of documents from group H10P30/20. <br>Groups H10P30/20 and H10P30/00 should be considered in order to perform a complete search.	H10P30/00	H10P30/00		
H10P30/20	8	into semiconductor materials, e.g. for doping<br><br><u>NOTE</u><br><br>When classifying in this group, the classification both in process and material subgroups is mandatory<br><br><u>WARNING</u><br>Group H10P30/20 is impacted by reclassification into group H10P30/00. <br>Groups H10P30/20 and H10P30/00 should be considered in order to perform a complete search.	H10P30/20	H10P30/20		
H10P30/202	9	{characterised by the semiconductor materials}<br><br><u>WARNING</u><br>Group H10P30/202 is impacted by reclassification into groups H10P30/208, H10P30/21 - H10P30/212, H10P30/22 - H10P30/221, H10P30/222 and H10P30/28. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/20		
H10P30/204	10	{into Group IV semiconductors}	H10P30/20	H10P30/20		
H10P30/2042	11	{into crystalline silicon carbide}<br><br><u>WARNING</u><br>Group H10P30/2042 is impacted by reclassification into groups H10P30/21, H10P30/218 and H10P30/28. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/20		
H10P30/2044	11	{into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon}<br><br><u>WARNING</u><br>Group H10P30/2044 is impacted by reclassification into groups H10P30/208, H10P30/21 - H10P30/212, H10P30/22 - H10P30/221, H10P30/222 and H10P30/28. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/20		
H10P30/206	10	{into Group III-V semiconductors}	H10P30/20	H10P30/20		
H10P30/208	9	{of electrically inactive species}<br><br><u>WARNING</u><br>Group H10P30/208 is incomplete pending reclassification of documents from groups H10P30/202 and H10P30/2044. <br>Groups H10P30/202, H10P30/2044 and H10P30/208 should be considered in order to perform a complete search.	H10P30/20	H10P30/20		
H10P30/209	10	{in silicon to make buried insulating layers}	H10P30/20	H10P30/20		
H10P30/21	9	{of electrically active species}<br><br><u>WARNING</u><br>Group H10P30/21 is incomplete pending reclassification of documents from groups H10P30/202, H10P30/2042 and H10P30/2044. Group H10P30/21 is also impacted by reclassification into groups H10P30/214 and H10P30/28. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/21		
H10P30/212	10	{Through-implantation}<br><br><u>WARNING</u><br>Group H10P30/212 is incomplete pending reclassification of documents from groups H10P30/202 and H10P30/2044. Group H10P30/212 is also impacted by reclassification into groups H10P30/214 and H10P30/28. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/212		
H10P30/214	9	{Recoil-implantation}<br><br><u>WARNING</u><br>Group H10P30/214 is incomplete pending reclassification of documents from groups H10P30/21 and H10P30/212. <br>Groups H10P30/21, H10P30/212 and H10P30/214 should be considered in order to perform a complete search.	H10P30/20	H10P30/214		
H10P30/218	9	{characterised by the implantation in a compound semiconductor of both electrically active and inactive species in the same semiconductor region to be doped n-type or p-type}<br><br><u>WARNING</u><br>Group H10P30/218 is incomplete pending reclassification of documents from group H10P30/2042. <br>Groups H10P30/2042 and H10P30/218 should be considered in order to perform a complete search.	H10P30/20	H10P30/218		
H10P30/22	9	using masks<br><br><u>WARNING</u><br>Group H10P30/22 is incomplete pending reclassification of documents from groups H10P30/202 and H10P30/2044. <br>Groups H10P30/202, H10P30/2044 and H10P30/22 should be considered in order to perform a complete search.	H10P30/22	H10P30/22		
H10P30/221	10	{characterised by the angle between the ion beam and the mask}<br><br><u>WARNING</u><br>Group H10P30/221 is incomplete pending reclassification of documents from groups H10P30/202, H10P30/2044 and H10P30/222. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/22	H10P30/22		
H10P30/222	9	{characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}<br><br><u>WARNING</u><br>Group H10P30/222 is incomplete pending reclassification of documents from groups H10P30/202 and H10P30/2044. Group H10P30/222 is also impacted by reclassification into group H10P30/221. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/20	H10P30/22		
H10P30/224	9	{of a cluster, e.g. using a gas cluster ion beam}	H10P30/20	H10P30/22		
H10P30/225	9	{of a molecular ion, e.g. decaborane}	H10P30/20	H10P30/22		
H10P30/226	9	{at a temperature lower than room temperature}	H10P30/20	H10P30/22		
H10P30/28	9	characterised by an annealing step, e.g. for activation of dopants<br><br><u>WARNING</u><br>Group H10P30/28 is incomplete pending reclassification of documents from groups H10P30/202, H10P30/2042, H10P30/2044, H10P30/21, H10P30/212, H10P95/90 and H10P95/904. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P30/28	H10P30/28		
H10P30/40	8	into insulating materials<br><br><u>WARNING</u><br>Group H10P30/40 is impacted by reclassification into group H10P32/20. <br>Groups H10P30/40 and H10P32/20 should be considered in order to perform a complete search.	H10P30/40	H10P30/40		
H10P32/00	7	Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00)<br><br><u>WARNING</u><br>Group H10P32/00 is impacted by reclassification into group H10P32/10. <br>Groups H10P32/00 and H10P32/10 should be considered in order to perform a complete search.	H10P32/00	H10P32/00		
H10P32/10	8	Diffusion of dopants within, into or out of semiconductor bodies or layers<br><br><u>WARNING</u><br>Group H10P32/10 is incomplete pending reclassification of documents from group H10P32/00. <br>Groups H10P32/00 and H10P32/10 should be considered in order to perform a complete search.	H10P32/10	H10P32/10		
H10P32/12	9	between a solid phase and a gaseous phase	H10P32/12	H10P32/12		
H10P32/1204	10	{from a plasma phase}	H10P32/12	H10P32/12		
H10P32/14	9	within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase	H10P32/14	H10P32/14		
H10P32/1404	10	{using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase}	H10P32/14	H10P32/14		
H10P32/1406	11	{by ion implantation}	H10P32/14	H10P32/14		
H10P32/1408	10	{from or through or into an external applied layer, e.g. photoresist or nitride layers}<br><br><u>NOTE</u><br><br>In the range H10P32/1408 - 32/1414 the main compositional part of the applied layer just before the diffusion step has to be considered for classification	H10P32/14	H10P32/14		
H10P32/141	11	{the applied layer comprising oxides only}	H10P32/14	H10P32/14		
H10P32/1412	12	{through the applied layer}	H10P32/14	H10P32/14		
H10P32/1414	11	{the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon}	H10P32/14	H10P32/14		
H10P32/15	9	{from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping}	H10P32/10	H10P32/15		
H10P32/16	9	between a solid phase and a liquid phase	H10P32/16	H10P32/16		
H10P32/17	9	{characterised by the semiconductor material}	H10P32/10	H10P32/17		
H10P32/171	10	{being group IV material}	H10P32/10	H10P32/171		
H10P32/172	11	{being crystalline silicon carbide}	H10P32/10	H10P32/172		
H10P32/173	11	{being semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon}<br><br><u>WARNING</u><br>Group H10P32/173 is incomplete pending reclassification of documents from group H10P95/92. <br>Groups H10P95/92 and H10P32/173 should be considered in order to perform a complete search.	H10P32/10	H10P32/173		
H10P32/174	10	{being Group III-V material}	H10P32/10	H10P32/174		
H10P32/18	9	{Diffusion lifetime killers}	H10P32/10	H10P32/18		
H10P32/185	9	{Lithium-drift diffusion}	H10P32/10	H10P32/185		
H10P32/19	9	{Diffusion sources}	H10P32/10	H10P32/19		
H10P32/20	8	Diffusion for doping of insulating layers<br><br><u>WARNING</u><br>Group H10P32/20 is incomplete pending reclassification of documents from group H10P30/40. <br>Groups H10P30/40 and H10P32/20 should be considered in order to perform a complete search.	H10P32/20	H10P32/20		
H10P32/30	8	Diffusion for doping of conductive or resistive layers	H10P32/30	H10P32/30		
H10P32/302	9	{Doping polycrystalline silicon or amorphous silicon layers}	H10P32/30	H10P32/30		
H10P34/00	7	Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices<br><br><u>WARNING</u><br>Group H10P34/00 is impacted by reclassification into groups H10P34/10, H10P34/20 and H10P34/40. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P34/00	H10P34/00		
H10P34/10	8	{with corpuscular radiation}<br><br><u>WARNING</u><br>Group H10P34/10 is incomplete pending reclassification of documents from group H10P34/00. <br>Groups H10P34/00 and H10P34/10 should be considered in order to perform a complete search.	H10P34/00	H10P34/10		
H10P34/20	8	for inducing a nuclear reaction transmuting chemical elements<br><br><u>WARNING</u><br>Group H10P34/20 is incomplete pending reclassification of documents from group H10P34/00. <br>Groups H10P34/00 and H10P34/20 should be considered in order to perform a complete search.	H10P34/20	H10P34/20		
H10P34/40	8	with high-energy radiation<br><br><u>WARNING</u><br>Group H10P34/40 is incomplete pending reclassification of documents from group H10P34/00. <br>Groups H10P34/00 and H10P34/40 should be considered in order to perform a complete search.	H10P34/40	H10P34/40		
H10P34/42	9	with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)	H10P34/42	H10P34/42		
H10P34/422	10	{using incoherent radiation}	H10P34/42	H10P34/42		
H10P36/00	7	Gettering within semiconductor bodies<br><br><u>WARNING</u><br>Group H10P36/00 is impacted by reclassification into groups H10P36/20 and H10P95/40. <br>Groups H10P36/00, H10P36/20 and H10P95/40 should be considered in order to perform a complete search.	H10P36/00	H10P36/00		
H10P36/03	8	{within silicon bodies}<br><br><u>WARNING</u><br>Group H10P36/03 is impacted by reclassification into group H10P95/402. <br>Groups H10P36/03 and H10P95/402 should be considered in order to perform a complete search.	H10P36/00	H10P36/03		
H10P36/07	9	{of silicon-on-insulator structures}	H10P36/00	H10P36/07		
H10P36/20	8	Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body<br><br><u>WARNING</u><br>Group H10P36/20 is incomplete pending reclassification of documents from group H10P36/00. <br>Groups H10P36/00 and H10P36/20 should be considered in order to perform a complete search.	H10P36/20	H10P36/20		
H10P50/00	7	Etching of wafers, substrates or parts of devices<br><br><u>WARNING</u><br>Group H10P50/00 is impacted by reclassification into groups H10P50/20, H10P50/24, H10P50/26, H10P50/60, H10P50/61, H10P50/64, H10P50/66, H10P52/00, H10P95/00, H10P95/02 and H10P95/70. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P50/00	H10P50/00		
H10P50/20	8	Dry etching; Plasma etching; Reactive-ion etching<br><br><u>WARNING</u><br>Group H10P50/20 is incomplete pending reclassification of documents from group H10P50/00. Group H10P50/20 is also impacted by reclassification into groups H10P50/24, H10P50/26, H10P50/60, H10P50/61, H10P50/64 and H10P50/66. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P50/20	H10P50/20		
H10P50/24	9	of semiconductor materials<br><br><u>WARNING</u><br>Group H10P50/24 is incomplete pending reclassification of documents from groups H10P50/00 and H10P50/20. <br>Groups H10P50/00, H10P50/20 and H10P50/24 should be considered in order to perform a complete search.	H10P50/24	H10P50/24		
H10P50/242	10	{of Group IV materials}	H10P50/24	H10P50/24		
H10P50/244	11	{comprising alternated and repeated etching and passivation steps}	H10P50/24	H10P50/24		
H10P50/246	10	{of Group III-V materials}	H10P50/24	H10P50/24		
H10P50/26	9	of conductive or resistive materials<br><br><u>WARNING</u><br>Group H10P50/26 is incomplete pending reclassification of documents from groups H10P50/00 and H10P50/20. <br>Groups H10P50/00, H10P50/20 and H10P50/26 should be considered in order to perform a complete search.	H10P50/26	H10P50/26		
H10P50/262	10	{by physical means only}	H10P50/26	H10P50/26		
H10P50/263	11	{of silicon-containing layers}	H10P50/26	H10P50/26		
H10P50/264	10	{by chemical means}<br><br><u>WARNING</u><br>Group H10P50/264 is impacted by reclassification into group H10P50/663. <br>Groups H10P50/264 and H10P50/663 should be considered in order to perform a complete search.	H10P50/26	H10P50/26		
H10P50/266	11	{by vapour etching only}	H10P50/26	H10P50/26		
H10P50/267	12	{using plasmas}	H10P50/26	H10P50/26		
H10P50/268	13	{of silicon-containing layers}	H10P50/26	H10P50/26		
H10P50/269	12	{pre- or post-treatments, e.g. anti-corrosion processes}	H10P50/26	H10P50/26		
H10P50/28	9	of insulating materials<br><br><u>WARNING</u><br>Group H10P50/28 is impacted by reclassification into group H10P50/68. <br>Groups H10P50/28 and H10P50/68 should be considered in order to perform a complete search.	H10P50/28	H10P50/28		
H10P50/282	10	{of inorganic materials}<br><br><u>WARNING</u><br>Group H10P50/282 is impacted by reclassification into group H10P50/683. <br>Groups H10P50/282 and H10P50/683 should be considered in order to perform a complete search.	H10P50/28	H10P50/28		
H10P50/283	11	{by chemical means}<br><br><u>WARNING</u><br>Group H10P50/283 is impacted by reclassification into group H10P50/683. <br>Groups H10P50/283 and H10P50/683 should be considered in order to perform a complete search.	H10P50/28	H10P50/28		
H10P50/285	12	{of materials not containing Si, e.g. PZT or Al2O3}	H10P50/28	H10P50/28		
H10P50/286	10	{of organic materials}<br><br><u>WARNING</u><br>Group H10P50/286 is impacted by reclassification into group H10P50/68. <br>Groups H10P50/286 and H10P50/68 should be considered in order to perform a complete search.	H10P50/28	H10P50/28		
H10P50/287	11	{by chemical means}<br><br><u>WARNING</u><br>Group H10P50/287 is impacted by reclassification into group H10P50/68. <br>Groups H10P50/287 and H10P50/68 should be considered in order to perform a complete search.	H10P50/28	H10P50/28		
H10P50/60	8	Wet etching<br><br><u>WARNING</u><br>Groups H10P50/60, H10P50/61, H10P50/64 and H10P50/66 are incomplete pending reclassification of documents from groups H10P50/00 and H10P50/20. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P50/60	H10P50/60		
H10P50/61	9	Electrolytic etching	H10P50/61	H10P50/61		
H10P50/613	10	{of Group IV materials}	H10P50/61	H10P50/61		
H10P50/617	10	{of Group III-V materials}	H10P50/61	H10P50/61		
H10P50/64	9	of semiconductor materials	H10P50/64	H10P50/64		
H10P50/642	10	{Chemical etching}	H10P50/64	H10P50/64		
H10P50/644	11	{Anisotropic liquid etching (H10P50/61 takes precedence)}	H10P50/64	H10P50/64		
H10P50/646	11	{of Group III-V materials}	H10P50/64	H10P50/64		
H10P50/648	12	{Anisotropic liquid etching}	H10P50/64	H10P50/64		
H10P50/66	9	of conductive or resistive materials	H10P50/66	H10P50/66		
H10P50/663	10	{by chemical means only}<br><br><u>WARNING</u><br>Group H10P50/663 is incomplete pending reclassification of documents from group H10P50/264. <br>Groups H10P50/264 and H10P50/663 should be considered in order to perform a complete search.	H10P50/66	H10P50/66		
H10P50/667	11	{by liquid etching only}	H10P50/66	H10P50/66		
H10P50/68	9	of insulating materials<br><br><u>WARNING</u><br>Group H10P50/68 is incomplete pending reclassification of documents from groups H10P50/28, H10P50/286 and H10P50/287. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P50/68	H10P50/68		
H10P50/683	10	{of inorganic materials}<br><br><u>WARNING</u><br>Group H10P50/683 is incomplete pending reclassification of documents from groups H10P50/282 and H10P50/283. <br>Groups H10P50/282, H10P50/283 and H10P50/683 should be considered in order to perform a complete search.	H10P50/68	H10P50/68		
H10P50/69	8	{using masks for semiconductor materials}	H10P50/00	H10P50/69		
H10P50/691	9	{for Group V materials or Group III-V materials}	H10P50/00	H10P50/691		
H10P50/692	10	{characterised by their composition, e.g. multilayer masks or materials}	H10P50/00	H10P50/692		
H10P50/693	10	{characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane}	H10P50/00	H10P50/693		
H10P50/694	11	{characterised by their behaviour during the process, e.g. soluble masks or redeposited masks}	H10P50/00	H10P50/694		
H10P50/695	11	{characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}	H10P50/00	H10P50/695		
H10P50/696	11	{Process specially adapted to improve the resolution of the mask}	H10P50/00	H10P50/696		
H10P50/71	8	{using masks for conductive or resistive materials}	H10P50/00	H10P50/71		
H10P50/73	8	{using masks for insulating materials}	H10P50/00	H10P50/73		
H10P52/00	7	Grinding, lapping or polishing of wafers, substrates or parts of devices<br><br><u>WARNING</u><br>Group H10P52/00 is incomplete pending reclassification of documents from group H10P50/00. Group H10P52/00 is incomplete pending reclassification of documents from group H10P50/00. Group H10P52/00 is also impacted by reclassification into groups H10P52/20, H10P52/40, H10P54/00 - H10P54/94 and H10P95/60. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P52/00	H10P52/00		
H10P52/20	8	Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]<br><br><u>WARNING</u><br>Group H10P52/20 is incomplete pending reclassification of documents from group H10P52/00. <br>Groups H10P52/00 and H10P52/20 should be considered in order to perform a complete search.	H10P52/20	H10P52/20		
H10P52/202	9	{of semiconductor materials}<br><br><u>WARNING</u><br>Group H10P52/202 is incomplete pending reclassification of documents from group H10P52/402. <br>Groups H10P52/402 and H10P52/202 should be considered in order to perform a complete search.	H10P52/20	H10P52/20		
H10P52/203	9	{of conductive or resistive materials}	H10P52/20	H10P52/20		
H10P52/207	9	{of inorganic insulating materials}<br><br><u>WARNING</u><br>Group H10P52/207 is incomplete pending reclassification of documents from group H10P95/062. <br>Groups H10P95/062 and H10P52/207 should be considered in order to perform a complete search.	H10P52/20	H10P52/20		
H10P52/209	9	{of organic insulating materials}<br><br><u>WARNING</u><br>Group H10P52/209 is incomplete pending reclassification of documents from group H10P95/08. <br>Groups H10P95/08 and H10P52/209 should be considered in order to perform a complete search.	H10P52/20	H10P52/20		
H10P52/40	8	Chemomechanical polishing [CMP] (electrochemical mechanical polishing H10P52/20)<br><br><u>WARNING</u><br>Group H10P52/40 is incomplete pending reclassification of documents from group H10P52/00. <br>Groups H10P52/00 and H10P52/40 should be considered in order to perform a complete search.	H10P52/40	H10P52/40		
H10P52/402	9	{of semiconductor materials}<br><br><u>WARNING</u><br>Group H10P52/402 is impacted by reclassification into group H10P52/202. <br>Groups H10P52/402 and H10P52/202 should be considered in order to perform a complete search.	H10P52/40	H10P52/40		
H10P52/403	9	{of conductive or resistive materials}	H10P52/40	H10P52/40		
H10P52/407	10	{of inorganic insulating materials}<br><br><u>WARNING</u><br>Group H10P52/407 is incomplete pending reclassification of documents from group H10P95/062. <br>Groups H10P95/062 and H10P52/407 should be considered in order to perform a complete search.	H10P52/40	H10P52/40		
H10P52/409	10	{of organic insulating materials}<br><br><u>WARNING</u><br>Group H10P52/409 is incomplete pending reclassification of documents from group H10P95/08. <br>Groups H10P95/08 and H10P52/409 should be considered in order to perform a complete search.	H10P52/40	H10P52/40		
H10P54/00	7	Cutting or separating of wafers, substrates or parts of devices<br><br><u>NOTE</u><br><br>This group covers cutting or separating of wafers or substrates having semiconductor or solid-state devices formed, or to be formed, therein or thereon. The cutting may be partial, e.g. for making a groove.<br><br><u>WARNING</u><br>Groups H10P54/00, H10P54/20, H10P54/30, H10P54/40, H10P54/50, H10P54/90, H10P54/922, H10P54/924 and H10P54/94 are incomplete pending reclassification of documents from groups H10P52/00 and H10P58/00. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P54/00	H10P54/00		
H10P54/20	8	by laser cutting	H10P54/20	H10P54/20		
H10P54/30	8	by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation	H10P54/30	H10P54/30		
H10P54/40	8	by sawing, e.g. using revolving or reciprocating blades	H10P54/40	H10P54/40		
H10P54/50	8	by scoring, breaking or cleaving	H10P54/50	H10P54/50		
H10P54/52	9	{by cleaving}<br><br><u>WARNING</u><br>Group H10P54/52 is incomplete pending reclassification of documents from groups H10P10/12, H10P52/00, H10P58/00, H10P90/1914 and H10P90/1916. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P54/50	H10P54/52		
H10P54/90	8	Auxiliary processes or arrangements	H10P54/90	H10P54/90		
H10P54/92	9	for protecting or reinforcing the surface of wafers or substrates during cutting or separating, e.g. using adhesive tapes<br><br><u>WARNING</u><br>Group H10P54/92 is incomplete pending reclassification of documents from group H10P52/00. <br>Groups H10P52/00 and H10P54/92 should be considered in order to perform a complete search.	H10P54/92	H10P54/92		
H10P54/922	10	{Arrangements for stress mitigation, e.g. crack stops}	H10P54/92	H10P54/92		
H10P54/924	10	{using expanding wafer tapes}	H10P54/92	H10P54/92		
H10P54/94	9	After-treatments, e.g. removal of adhesive tapes or supports	H10P54/94	H10P54/94		
H10P56/00	7	Debonding of wafers, substrates or parts of devices<br><br><u>NOTE</u><br><br>debonding means separation at the bonding interface following a previous bonding step<br><br><u>WARNING</u><br>Group H10P56/00 is incomplete pending reclassification of documents from groups H10P10/12 and H10P90/00. <br>Groups H10P10/12, H10P90/00 and H10P56/00 should be considered in order to perform a complete search.	H10P56/00	H10P56/00		
H10P58/00	7	Singulating wafers or substrates into multiple chips, i.e. dicing<br><br><u>NOTE</u><br><br>When classifying in this group, any process step involving cutting or separating, which is considered to represent information of interest for search, may also be classified in group H10P54/00.<br><br><u>WARNING</u><br>Group H10P58/00 is impacted by reclassification into groups H10P58/20 - H10P58/22, H10P54/00, H10P54/20, H10P54/30, H10P54/40, H10P54/50 - H10P54/52, H10P54/90, H10P54/922, H10P54/924 and H10P54/94. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P58/00	H10P58/00		
H10P58/20	8	{comprising two or more processes, e.g. etching and cutting}<br><br><u>WARNING</u><br>Groups H10P58/20 and H10P58/22 are incomplete pending reclassification of documents from group H10P58/00. <br>Groups H10P58/00, H10P58/20 and H10P58/22 should be considered in order to perform a complete search.	H10P58/00	H10P58/20		
H10P58/22	9	{characterised by the singulation processes being performed on multiple sides of the wafer or substrate}	H10P58/00	H10P58/22		
H10P70/00	7	Cleaning of wafers, substrates or parts of devices<br><br><u>NOTE</u><br><br>This group does not cover the cleaning of package elements, package parts or other constructional details, e.g. cleaning of packages after moulding, which are covered by the related groups of subclass H10W.	H10P70/00	H10P70/00		
H10P70/10	8	{Cleaning before device manufacture, i.e. Begin-Of-Line process}	H10P70/00	H10P70/10		
H10P70/12	9	{by dry cleaning only (H10P70/52 takes precedence)}	H10P70/00	H10P70/12		
H10P70/125	10	{with gaseous HF}	H10P70/00	H10P70/125		
H10P70/15	9	{by wet cleaning only (H10P70/52 takes precedence)}	H10P70/00	H10P70/15		
H10P70/18	9	{by combined dry cleaning and wet cleaning (H10P70/52 takes precedence)}	H10P70/00	H10P70/18		
H10P70/20	8	{Cleaning during device manufacture}	H10P70/00	H10P70/20		
H10P70/23	9	{during, before or after processing of insulating materials}	H10P70/00	H10P70/23		
H10P70/234	10	{the processing being the formation of vias or contact holes}	H10P70/00	H10P70/234		
H10P70/237	10	{the processing being a planarisation of insulating layers}	H10P70/00	H10P70/237		
H10P70/27	9	{during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers}	H10P70/00	H10P70/27		
H10P70/273	10	{the processing being a delineation of conductive layers, e.g. by RIE}	H10P70/00	H10P70/273		
H10P70/277	10	{the processing being a planarisation of conductive layers}	H10P70/00	H10P70/277		
H10P70/30	8	{Cleaning after the substrates have been singulated}	H10P70/00	H10P70/30		
H10P70/40	8	{Cleaning for reclaiming}	H10P70/00	H10P70/40		
H10P70/50	8	{characterised by the part to be cleaned}	H10P70/00	H10P70/50		
H10P70/52	9	{Cleaning of diamond}	H10P70/00	H10P70/52		
H10P70/54	9	{Cleaning of wafer edges}	H10P70/00	H10P70/54		
H10P70/56	9	{Cleaning of wafer backside}	H10P70/00	H10P70/56		
H10P70/58	9	{Cleaning of porous materials}	H10P70/00	H10P70/58		
H10P70/60	8	{Cleaning only by mechanical processes}	H10P70/00	H10P70/60		
H10P70/70	8	{Cleaning only by lasers processes, e.g. laser ablation}	H10P70/00	H10P70/70		
H10P70/80	8	{Cleaning only by supercritical fluids}	H10P70/00	H10P70/80		
H10P72/00	7	Handling or holding of wafers, substrates or devices during manufacture or treatment thereof	H10P72/00	H10P72/00		
H10P72/04	8	{Apparatus for manufacture or treatment}	H10P72/00	H10P72/04		
H10P72/0402	9	{Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}	H10P72/00	H10P72/0402		
H10P72/0404	10	{for general liquid treatment, e.g. etching followed by cleaning}	H10P72/00	H10P72/0404		
H10P72/0406	10	{for cleaning followed by drying, rinsing, stripping, blasting or the like}	H10P72/00	H10P72/0406		
H10P72/0408	11	{for drying}	H10P72/00	H10P72/0408		
H10P72/0411	11	{for wet cleaning or washing}	H10P72/00	H10P72/0411		
H10P72/0412	12	{using mainly scrubbing means, e.g. brushes}	H10P72/00	H10P72/0412		
H10P72/0414	12	{using mainly spraying means, e.g. nozzles}	H10P72/00	H10P72/0414		
H10P72/0416	12	{with the semiconductor substrates being dipped in baths or vessels}	H10P72/00	H10P72/0416		
H10P72/0418	10	{for etching}	H10P72/00	H10P72/0418		
H10P72/0421	11	{for drying etching}	H10P72/00	H10P72/0421		
H10P72/0422	11	{for wet etching}	H10P72/00	H10P72/0422		
H10P72/0424	12	{using mainly spraying means, e.g. nozzles}	H10P72/00	H10P72/0424		
H10P72/0426	12	{with the semiconductor substrates being dipped in baths or vessels}	H10P72/00	H10P72/0426		
H10P72/0428	9	{Apparatus for mechanical treatment or grinding or cutting}	H10P72/00	H10P72/0428		
H10P72/0431	9	{Apparatus for thermal treatment}	H10P72/00	H10P72/0431		
H10P72/0432	10	{mainly by conduction}	H10P72/00	H10P72/0432		
H10P72/0434	10	{mainly by convection}	H10P72/00	H10P72/0434		
H10P72/0436	10	{mainly by radiation}	H10P72/00	H10P72/0436		
H10P72/0438	9	{Apparatus for making assemblies not otherwise provided for, e.g. package constructions}	H10P72/00	H10P72/0438		
H10P72/0441	9	{Apparatus for sealing, encapsulating, glassing, decapsulating or the like}	H10P72/00	H10P72/0441		
H10P72/0442	9	{Apparatus for placing on an insulating substrate, e.g. tape}	H10P72/00	H10P72/0442		
H10P72/0444	9	{Apparatus for wiring semiconductor or solid-state device}	H10P72/00	H10P72/0444		
H10P72/0446	9	{Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates}	H10P72/00	H10P72/0446		
H10P72/0448	9	{Apparatus for applying a liquid, a resin, an ink or the like}	H10P72/00	H10P72/0448		
H10P72/0451	9	{Apparatus for manufacturing or treating in a plurality of work-stations}	H10P72/00	H10P72/0451		
H10P72/0452	10	{characterised by the layout of the process chambers}	H10P72/00	H10P72/0452		
H10P72/0454	11	{surrounding a central transfer chamber}	H10P72/00	H10P72/0454		
H10P72/0456	11	{in-line arrangement}	H10P72/00	H10P72/0456		
H10P72/0458	11	{vertical arrangement}	H10P72/00	H10P72/0458		
H10P72/0461	10	{characterised by the presence of two or more transfer chambers}	H10P72/00	H10P72/0461		
H10P72/0462	10	{characterised by the construction of the processing chambers, e.g. modular processing chambers}	H10P72/00	H10P72/0462		
H10P72/0464	10	{characterised by the construction of the transfer chamber}	H10P72/00	H10P72/0464		
H10P72/0466	10	{characterised by the construction of the load-lock chamber}	H10P72/00	H10P72/0466		
H10P72/0468	10	{comprising a chamber adapted to a particular process}	H10P72/00	H10P72/0468		
H10P72/0471	11	{comprising at least one ion or electron beam chamber}	H10P72/00	H10P72/0471		
H10P72/0472	11	{comprising at least one polishing chamber}	H10P72/00	H10P72/0472		
H10P72/0474	11	{comprising at least one lithography chamber}	H10P72/00	H10P72/0474		
H10P72/0476	11	{comprising at least one plating chamber}	H10P72/00	H10P72/0476		
H10P72/0478	9	{the substrates being processed being not semiconductor wafers, e.g. leadframes or chips}	H10P72/00	H10P72/0478		
H10P72/06	8	{Apparatus for monitoring, sorting, marking, testing or measuring}	H10P72/00	H10P72/06		
H10P72/0602	9	{Temperature monitoring}	H10P72/00	H10P72/0602		
H10P72/0604	9	{Process monitoring, e.g. flow or thickness monitoring}	H10P72/00	H10P72/0604		
H10P72/0606	9	{Position monitoring, e.g. misposition detection or presence detection}	H10P72/00	H10P72/0606		
H10P72/0608	10	{of substrates stored in a container, a magazine, a carrier, a boat or the like}	H10P72/00	H10P72/0608		
H10P72/0611	9	{Sorting devices}	H10P72/00	H10P72/0611		
H10P72/0612	9	{Production flow monitoring, e.g. for increasing throughput}	H10P72/00	H10P72/0612		
H10P72/0614	9	{Marking devices}	H10P72/00	H10P72/0614		
H10P72/0616	9	{Monitoring of warpages, curvatures, damages, defects or the like}	H10P72/00	H10P72/0616		
H10P72/0618	9	{using identification means, e.g. labels on substrates or labels on containers}	H10P72/00	H10P72/0618		
H10P72/10	8	using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]	H10P72/10	H10P72/10		
H10P72/12	9	{Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements}	H10P72/10	H10P72/12		
H10P72/123	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/123		
H10P72/127	10	{characterised by the substrate support}	H10P72/10	H10P72/127		
H10P72/13	9	{Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements}	H10P72/10	H10P72/13		
H10P72/135	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/135		
H10P72/14	9	{Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls}	H10P72/10	H10P72/14		
H10P72/145	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/145		
H10P72/15	9	{Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls}	H10P72/10	H10P72/15		
H10P72/155	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/155		
H10P72/16	9	{Trays for chips}	H10P72/10	H10P72/16		
H10P72/165	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/165		
H10P72/17	9	{specially adapted for supporting large square shaped substrates}	H10P72/10	H10P72/17		
H10P72/175	10	{characterised by a material, a roughness, a coating or the like}	H10P72/10	H10P72/175		
H10P72/18	9	{characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports}	H10P72/10	H10P72/18		
H10P72/19	9	{closed carriers}	H10P72/10	H10P72/19		
H10P72/1902	10	{specially adapted for a single substrate}	H10P72/10	H10P72/1902		
H10P72/1904	10	{specially adapted for containing chips, dies or ICs}	H10P72/10	H10P72/1904		
H10P72/1906	10	{specially adapted for containing masks, reticles or pellicles}	H10P72/10	H10P72/1906		
H10P72/1908	10	{specially adapted for containing substrates other than wafers}	H10P72/10	H10P72/1908		
H10P72/1911	10	{characterised by materials, roughness, coatings or the like}	H10P72/10	H10P72/1911		
H10P72/1912	11	{characterised by shock absorbing elements, e.g. retainers or cushions}	H10P72/10	H10P72/1912		
H10P72/1914	10	{characterised by locking systems}	H10P72/10	H10P72/1914		
H10P72/1916	10	{characterised by sealing arrangements}	H10P72/10	H10P72/1916		
H10P72/1918	10	{characterised by coupling elements, kinematic members, handles or elements to be externally gripped}	H10P72/10	H10P72/1918		
H10P72/1921	10	{characterised by substrate supports}	H10P72/10	H10P72/1921		
H10P72/1922	10	{characterised by the construction of the closed carrier}	H10P72/10	H10P72/1922		
H10P72/1924	10	{characterised by atmosphere control}	H10P72/10	H10P72/1924		
H10P72/1926	11	{characterised by the presence of atmosphere modifying elements inside or attached to the closed carrier}	H10P72/10	H10P72/1926		
H10P72/1928	12	{characterised by the presence of antistatic elements}	H10P72/10	H10P72/1928		
H10P72/30	8	for conveying, e.g. between different workstations	H10P72/30	H10P72/30		
H10P72/32	9	{between different workstations}	H10P72/30	H10P72/32		
H10P72/3202	10	{Mechanical details, e.g. rollers or belts}	H10P72/30	H10P72/3202		
H10P72/3204	10	{using magnetic elements}	H10P72/30	H10P72/3204		
H10P72/3206	10	{the substrate being handled substantially vertically}	H10P72/30	H10P72/3206		
H10P72/3208	10	{Changing the direction of the conveying path}	H10P72/30	H10P72/3208		
H10P72/3211	10	{Changing orientation of the substrate, e.g. from a horizontal position to a vertical position}	H10P72/30	H10P72/3211		
H10P72/3212	10	{the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames}	H10P72/30	H10P72/3212		
H10P72/3214	10	{by means of a cart or a vehicle}	H10P72/30	H10P72/3214		
H10P72/3216	10	{using a general scheme of a conveying path within a factory}	H10P72/30	H10P72/3216		
H10P72/3218	10	{Conveying cassettes, containers or carriers}	H10P72/30	H10P72/3218		
H10P72/3221	10	{Overhead conveying}	H10P72/30	H10P72/3221		
H10P72/3222	10	{Loading to or unloading from a conveyor}	H10P72/30	H10P72/3222		
H10P72/33	9	{into and out of processing chamber}	H10P72/30	H10P72/33		
H10P72/3302	10	{Mechanical parts of transfer devices}	H10P72/30	H10P72/3302		
H10P72/3304	10	{characterised by movements or sequence of movements of transfer devices}	H10P72/30	H10P72/3304		
H10P72/3306	10	{Horizontal transfer of a single workpiece}	H10P72/30	H10P72/3306		
H10P72/3308	10	{Vertical transfer of a single workpiece}	H10P72/30	H10P72/3308		
H10P72/3311	10	{Horizontal transfer of a batch of workpieces}	H10P72/30	H10P72/3311		
H10P72/3312	10	{Vertical transfer of a batch of workpieces}	H10P72/30	H10P72/3312		
H10P72/3314	10	{Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers}	H10P72/30	H10P72/3314		
H10P72/34	9	{the wafers being stored in a carrier, involving loading and unloading}	H10P72/30	H10P72/34		
H10P72/3402	10	{Mechanical parts of transfer devices}	H10P72/30	H10P72/3402		
H10P72/3404	10	{Storage means}	H10P72/30	H10P72/3404		
H10P72/3406	10	{involving removal of lid, door or cover}	H10P72/30	H10P72/3406		
H10P72/3408	10	{Docking arrangements}	H10P72/30	H10P72/3408		
H10P72/3411	10	{involving loading and unloading of wafers}	H10P72/30	H10P72/3411		
H10P72/3412	11	{Batch transfer of wafers}	H10P72/30	H10P72/3412		
H10P72/36	9	{using air tracks}	H10P72/30	H10P72/36		
H10P72/3602	10	{with angular orientation of the workpieces}	H10P72/30	H10P72/3602		
H10P72/3604	10	{the workpieces being stored in a carrier, involving loading and unloading}	H10P72/30	H10P72/3604		
H10P72/37	9	{with orientating and positioning by means of a vibratory bowl or track}	H10P72/30	H10P72/37		
H10P72/38	9	{with angular orientation of workpieces}	H10P72/30	H10P72/38		
H10P72/50	8	for positioning, orientation or alignment	H10P72/50	H10P72/50		
H10P72/53	9	{using optical controlling means}	H10P72/50	H10P72/53		
H10P72/57	9	{Mask-wafer alignment}	H10P72/50	H10P72/57		
H10P72/70	8	for supporting or gripping<br><br><u>WARNING</u><br>Group H10P72/70 is impacted by reclassification into groups H10P72/72, H10P72/74 and H10P72/7448 - H10P72/745. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P72/70	H10P72/70		
H10P72/72	9	using electrostatic chucks<br><br><u>WARNING</u><br>Group H10P72/72 is incomplete pending reclassification of documents from group H10P72/70. <br>Groups H10P72/70 and H10P72/72 should be considered in order to perform a complete search.	H10P72/72	H10P72/72		
H10P72/722	10	{Details of electrostatic chucks}	H10P72/72	H10P72/72		
H10P72/74	9	{using temporarily an auxiliary support}<br><br><u>WARNING</u><br>Groups H10P72/74, H10P72/7448 and H10P72/745 are incomplete pending reclassification of documents from group H10P72/70. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P72/70	H10P72/74		
H10P72/7402	10	{Wafer tapes, e.g. grinding or dicing support tapes}<br><br><u>WARNING</u><br>Group H10P72/7402 is impacted by reclassification into groups H10P72/7404 and H10P72/7406. <br>Groups H10P72/7402, H10P72/7404 and H10P72/7406 should be considered in order to perform a complete search.	H10P72/70	H10P72/7402		
H10P72/7404	11	{the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer}<br><br><u>WARNING</u><br>Groups H10P72/7404 and H10P72/7406 are incomplete pending reclassification of documents from group H10P72/7402. <br>Groups H10P72/7402, H10P72/7404 and H10P72/7406 should be considered in order to perform a complete search.	H10P72/70	H10P72/7404		
H10P72/7406	12	{the wafer tape being a laminate of four or more layers, e.g. including two or more additional layers beyond a base layer and an uppermost adhesive layer}	H10P72/70	H10P72/7406		
H10P72/7408	10	{the auxiliary support including alignment aids}	H10P72/70	H10P72/7408		
H10P72/741	10	{the auxiliary support including a cavity for storing a finished or partly finished device during manufacturing or mounting, e.g. for an IC package or for a chip}	H10P72/70	H10P72/741		
H10P72/7412	10	{the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support}	H10P72/70	H10P72/7412		
H10P72/7414	11	{the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support}	H10P72/70	H10P72/7414		
H10P72/7416	10	{used during dicing or grinding}	H10P72/70	H10P72/7416		
H10P72/7418	11	{of passive members, e.g. a chip mounting substrate}	H10P72/70	H10P72/7418		
H10P72/742	11	{involving stretching of the auxiliary support post dicing}	H10P72/70	H10P72/742		
H10P72/7422	10	{used to protect an active side of a device or wafer}	H10P72/70	H10P72/7422		
H10P72/7424	10	{used as a support during the manufacture of self-supporting substrates}	H10P72/70	H10P72/7424		
H10P72/7426	10	{used as a support during build up manufacturing of active devices}	H10P72/70	H10P72/7426		
H10P72/7428	10	{used to support diced chips prior to mounting}	H10P72/70	H10P72/7428		
H10P72/743	10	{used as a support during manufacture of interconnect decals or build up layers}	H10P72/70	H10P72/743		
H10P72/7432	10	{used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate}	H10P72/70	H10P72/7432		
H10P72/7434	10	{used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate}	H10P72/70	H10P72/7434		
H10P72/7436	10	{used to support a device or a wafer when forming electrical connections thereto}	H10P72/70	H10P72/7436		
H10P72/7438	10	{with parts of the auxiliary support remaining in the finished device}	H10P72/70	H10P72/7438		
H10P72/744	10	{Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}	H10P72/70	H10P72/744		
H10P72/7442	11	{Separation by peeling}	H10P72/70	H10P72/7442		
H10P72/7444	12	{using a peeling wedge, a knife or a bar}	H10P72/70	H10P72/7444		
H10P72/7446	12	{using a peeling wheel}	H10P72/70	H10P72/7446		
H10P72/7448	10	{the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer}	H10P72/70	H10P72/7448		
H10P72/745	11	{the bond interface between the auxiliary support and the wafer comprises three or more layers}	H10P72/70	H10P72/745		
H10P72/76	9	using mechanical means, e.g. clamps or pinches	H10P72/76	H10P72/76		
H10P72/7602	10	{the wafers being placed on a robot blade or gripped by a gripper for conveyance}	H10P72/76	H10P72/76		
H10P72/7604	10	{the wafers being placed on a susceptor, stage or support}	H10P72/76	H10P72/76		
H10P72/7606	11	{characterised by edge clamping, e.g. clamping ring}	H10P72/76	H10P72/76		
H10P72/7608	11	{characterised by a plurality of separate clamping members, e.g. clamping fingers}	H10P72/76	H10P72/76		
H10P72/7611	11	{characterised by edge profile or support profile}	H10P72/76	H10P72/76		
H10P72/7612	11	{characterised by lifting arrangements, e.g. lift pins}	H10P72/76	H10P72/76		
H10P72/7614	11	{characterised by a plurality of individual support members, e.g. support posts or protrusions}	H10P72/76	H10P72/76		
H10P72/7616	11	{characterised by a coating, a hardness or a material}	H10P72/76	H10P72/76		
H10P72/7618	11	{characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel}	H10P72/76	H10P72/76		
H10P72/7621	11	{characterised by supporting two or more semiconductor substrates}	H10P72/76	H10P72/76		
H10P72/7622	11	{characterised by supporting substrates others than wafers, e.g. chips}	H10P72/76	H10P72/76		
H10P72/7624	11	{characterised by the mechanical construction of the susceptor, stage or support}	H10P72/76	H10P72/76		
H10P72/7626	11	{characterised by the construction of the shaft}	H10P72/76	H10P72/76		
H10P72/78	9	using vacuum or suction, e.g. Bernoulli chucks	H10P72/78	H10P72/78		
H10P74/00	7	Testing or measuring during manufacture or treatment of wafers, substrates or devices	H10P74/00	H10P74/00		
H10P74/20	8	characterised by the properties tested or measured, e.g. structural or electrical properties	H10P74/20	H10P74/20		
H10P74/203	9	{Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}	H10P74/20	H10P74/20		
H10P74/207	9	{Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics}	H10P74/20	H10P74/20		
H10P74/23	8	{characterised by multiple measurements, corrections, marking or sorting processes}	H10P74/00	H10P74/23		
H10P74/232	9	{comprising connection or disconnection of parts of a device in response to a measurement}	H10P74/00	H10P74/232		
H10P74/235	9	{comprising optical enhancement of defects or not-directly-visible states}	H10P74/00	H10P74/235		
H10P74/238	9	{comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement}	H10P74/00	H10P74/238		
H10P74/27	8	{Structural arrangements therefor}	H10P74/00	H10P74/27		
H10P74/273	9	{Interconnections for measuring or testing, e.g. probe pads}	H10P74/00	H10P74/273		
H10P74/277	9	{Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers}	H10P74/00	H10P74/277		
H10P76/00	7	Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography	H10P76/00	H10P76/00		
H10P76/20	8	of masks comprising organic materials	H10P76/20	H10P76/20		
H10P76/202	9	{for lift-off processes}	H10P76/20	H10P76/20		
H10P76/204	9	{of organic photoresist masks}	H10P76/20	H10P76/20		
H10P76/2041	10	{Photolithographic processes}	H10P76/20	H10P76/20		
H10P76/2042	11	{using lasers}	H10P76/20	H10P76/20		
H10P76/2043	11	{using an anti-reflective coating}	H10P76/20	H10P76/20		
H10P76/2045	10	{Electron beam lithography processes}	H10P76/20	H10P76/20		
H10P76/2047	10	{X-ray beam lithography processes}	H10P76/20	H10P76/20		
H10P76/2049	10	{Ion beam lithography processes}	H10P76/20	H10P76/20		
H10P76/40	8	of masks comprising inorganic materials	H10P76/40	H10P76/40		
H10P76/403	9	{for lift-off processes}	H10P76/40	H10P76/40		
H10P76/405	9	{characterised by their composition, e.g. multilayer masks}	H10P76/40	H10P76/40		
H10P76/408	9	{characterised by their sizes, orientations, dispositions, behaviours or shapes}	H10P76/40	H10P76/40		
H10P76/4083	10	{characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks}	H10P76/40	H10P76/40		
H10P76/4085	10	{characterised by the processes involved to create the masks}	H10P76/40	H10P76/40		
H10P76/4088	10	{Processes for improving the resolution of the masks}	H10P76/40	H10P76/40		
H10P90/00	7	Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement<br><br><u>NOTE</u><br><br>This group covers multistep processes for the preparation of wafers before the subsequent manufacture of semiconductor devices or solid-state devices therein or thereon.<br>This group does not cover the single-crystal growth of semiconductor ingots, which is covered by subclass C30B.<br><br><u>WARNING</u><br>Group H10P90/00 is impacted by reclassification into groups H10P90/19, H10P90/1902, H10P90/1904, H10P90/1906, H10P90/21 - H10P90/212, H10P90/22, H10P90/24, H10P56/00 and H10P10/12. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P90/00	H10P90/00		
H10P90/12	8	{Preparing bulk and homogeneous wafers}	H10P90/00	H10P90/12		
H10P90/123	9	{by grinding or lapping}	H10P90/00	H10P90/123		
H10P90/124	9	{by processing the backside of the wafers}	H10P90/00	H10P90/124		
H10P90/126	9	{by chemical etching}	H10P90/00	H10P90/126		
H10P90/128	9	{by edge treatment, e.g. chamfering}	H10P90/00	H10P90/128		
H10P90/129	9	{by polishing}	H10P90/00	H10P90/129		
H10P90/14	9	{by setting crystal orientation}	H10P90/00	H10P90/14		
H10P90/15	9	{by making porous regions on the surface}	H10P90/00	H10P90/15		
H10P90/16	9	{by reclaiming or re-processing}	H10P90/00	H10P90/16		
H10P90/18	9	{by shaping}	H10P90/00	H10P90/18		
H10P90/19	8	{Preparing inhomogeneous wafers}<br><br><u>WARNING</u><br>Groups H10P90/19, H10P90/1902, H10P90/1904 and H10P90/1906 are incomplete pending reclassification of documents from group H10P90/00. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P90/00	H10P90/19		
H10P90/1902	9	{Preparing horizontally inhomogeneous wafers}	H10P90/00	H10P90/1902		
H10P90/1904	9	{Preparing vertically inhomogeneous wafers}	H10P90/00	H10P90/1904		
H10P90/1906	10	{Preparing SOI wafers}	H10P90/00	H10P90/1906		
H10P90/1908	11	{using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]}	H10P90/00	H10P90/1908		
H10P90/191	11	{using full isolation by porous oxide silicon [FIPOS]}	H10P90/00	H10P90/191		
H10P90/1912	11	{using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon}	H10P90/00	H10P90/1912		
H10P90/1914	11	{using bonding}<br><br><u>WARNING</u><br>Group H10P90/1914 is incomplete pending reclassification of documents from group H10P10/12. Group H10P90/1914 is also impacted by reclassification into groups H10P10/126, H10P10/128 - H10P10/1285, H10P10/14, H10P54/52 and H10P90/1918 - H10P90/192. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P90/00	H10P90/1914		
H10P90/1916	12	{with separation or delamination along an ion implanted layer, e.g. Smart-cut}<br><br><u>WARNING</u><br>Group H10P90/1916 is incomplete pending reclassification of documents from group H10P10/12. Group H10P90/1916 is also impacted by reclassification into groups H10P10/126, H10P10/128 - H10P10/1285, H10P10/14, H10P54/52 and H10P90/1918 - H10P90/192. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P90/00	H10P90/1916		
H10P90/1918	12	{including charge trapping layers, e.g. polycrystalline materials}<br><br><u>WARNING</u><br>Groups H10P90/1918 and H10P90/192 are incomplete pending reclassification of documents from groups H10P90/1914 and H10P90/1916. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P90/00	H10P90/1918		
H10P90/192	13	{irregularly shaped charge trapping layers}	H10P90/00	H10P90/192		
H10P90/1922	11	{using silicon etch back techniques, e.g. BESOI or ELTRAN}	H10P90/00	H10P90/1922		
H10P90/1924	11	{with separation/delamination along a porous layer}	H10P90/00	H10P90/1924		
H10P90/21	8	{by transferring two-dimensional materials}<br><br><u>WARNING</u><br>Groups H10P90/21 and H10P90/212 are incomplete pending reclassification of documents from group H10P90/00. <br>Groups H10P90/00, H10P90/21 and H10P90/212 should be considered in order to perform a complete search.	H10P90/00	H10P90/21		
H10P90/212	9	{by transferring of graphene}	H10P90/00	H10P90/212		
H10P90/22	8	{by transferring layers from a donor substrate to a final substrate utilising a temporary handle substrate as an intermediary}<br><br><u>WARNING</u><br>Group H10P90/22 is incomplete pending reclassification of documents from group H10P90/00. <br>Groups H10P90/00 and H10P90/22 should be considered in order to perform a complete search.	H10P90/00	H10P90/22		
H10P90/24	8	{by concurrent transfer of multiple parts}<br><br><u>WARNING</u><br>Group H10P90/24 is incomplete pending reclassification of documents from group H10P90/00. <br>Groups H10P90/00 and H10P90/24 should be considered in order to perform a complete search.	H10P90/00	H10P90/24		
H10P95/00	7	Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass<br><br><u>WARNING</u><br>Group H10P95/00 is incomplete pending reclassification of documents from groups H10P10/00 and H10P50/00. Group H10P95/00 is also impacted by reclassification into groups H10P95/02, H10P95/04, H10P95/06 - H10P95/066, H10P95/08, H10P95/11 - H10P95/112, H10P95/40 - H10P95/408, H10P95/50, H10P95/60, H10P95/70, H10P95/80 and H10P95/90. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/00	H10P95/00		
H10P95/02	8	{Planarisation of semiconductor materials}<br><br><u>WARNING</u><br>Group H10P95/02 is incomplete pending reclassification of documents from groups H10P50/00, H10P95/00, H10P95/60 and H10P95/70. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/00	H10P95/02		
H10P95/04	8	{Planarisation of conductive or resistive materials}<br><br><u>WARNING</u><br>Group H10P95/04 is incomplete pending reclassification of documents from group H10P95/00. <br>Groups H10P95/00 and H10P95/04 should be considered in order to perform a complete search.	H10P95/00	H10P95/04		
H10P95/06	8	{Planarisation of inorganic insulating materials}<br><br><u>WARNING</u><br>Groups H10P95/06, H10P95/064 and H10P95/066 are incomplete pending reclassification of documents from group H10P95/00. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/00	H10P95/06		
H10P95/062	9	{involving a dielectric removal step}<br><br><u>WARNING</u><br>Group H10P95/062 is incomplete pending reclassification of documents from group H10P95/00. Group H10P95/062 is also impacted by reclassification into groups H10P52/407 and H10P52/207. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/00	H10P95/062		
H10P95/064	10	{the removal being chemical etching}	H10P95/00	H10P95/064		
H10P95/066	11	{the removal being a selective chemical etching step, e.g. selective dry etching through a mask}	H10P95/00	H10P95/066		
H10P95/08	8	{Planarisation of organic insulating materials}<br><br><u>WARNING</u><br>Group H10P95/08 is incomplete pending reclassification of documents from group H10P95/00. Group H10P95/08 is also impacted by reclassification into groups H10P52/209 and H10P52/409. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/00	H10P95/08		
H10P95/11	8	{Separation of active layers from substrates}<br><br><u>WARNING</u><br>Groups H10P95/11 and H10P95/112 are incomplete pending reclassification of documents from group H10P95/00. <br>Groups H10P95/00, H10P95/11 and H10P95/112 should be considered in order to perform a complete search.	H10P95/00	H10P95/11		
H10P95/112	9	{leaving a reusable substrate, e.g. epitaxial lift off}	H10P95/00	H10P95/112		
H10P95/40	8	Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections<br><br><u>WARNING</u><br>Group H10P95/40 is incomplete pending reclassification of documents from groups H10P36/00 and H10P95/00. <br>Groups H10P36/00, H10P95/00 and H10P95/40 should be considered in order to perform a complete search.	H10P95/40	H10P95/40		
H10P95/402	9	{of silicon bodies}<br><br><u>WARNING</u><br>Group H10P95/402 is incomplete pending reclassification of documents from groups H10P36/03 and H10P95/00. <br>Groups H10P36/03, H10P95/00 and H10P95/402 should be considered in order to perform a complete search.	H10P95/40	H10P95/40		
H10P95/405	10	{using cavities formed by hydrogen or noble gas ion implantation}<br><br><u>WARNING</u><br>Group H10P95/405 is incomplete pending reclassification of documents from group H10P95/00. <br>Groups H10P95/00 and H10P95/405 should be considered in order to perform a complete search.	H10P95/40	H10P95/40		
H10P95/408	9	{of Group III-V semiconductors, e.g. to render them semi-insulating}<br><br><u>WARNING</u><br>Group H10P95/408 is incomplete pending reclassification of documents from group H10P95/00. <br>Groups H10P95/00 and H10P95/408 should be considered in order to perform a complete search.	H10P95/40	H10P95/40		
H10P95/50	8	{Alloying conductive materials with semiconductor bodies}<br><br><u>WARNING</u><br>Group H10P95/50 is incomplete pending reclassification of documents from group H10P95/00. <br>Groups H10P95/00 and H10P95/50 should be considered in order to perform a complete search.	H10P95/00	H10P95/50		
H10P95/60	8	Mechanical treatments, e.g. by ultrasounds<br><br><u>WARNING</u><br>Group H10P95/60 is incomplete pending reclassification of documents from groups H10P52/00 and H10P95/00. Group H10P95/60 is also impacted by reclassification into group H10P95/02. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/60	H10P95/60		
H10P95/70	8	Chemical treatments<br><br><u>WARNING</u><br>Group H10P95/70 is incomplete pending reclassification of documents from groups H10P14/60, H10P50/00 and H10P95/00. Group H10P95/70 is also impacted by reclassification into groups H10P95/80 and H10P95/02. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/70	H10P95/70		
H10P95/80	8	Electrical treatments, e.g. for electroforming<br><br><u>WARNING</u><br>Group H10P95/80 is incomplete pending reclassification of documents from groups H10P14/60, H10P95/00 and H10P95/70. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10P95/80	H10P95/80		
H10P95/90	8	Thermal treatments, e.g. annealing or sintering<br><br><u>WARNING</u><br>Group H10P95/90 is incomplete pending reclassification of documents from group H10P95/00. Group H10P95/90 is also impacted by reclassification into group H10P30/28. <br>Groups H10P95/00, H10P95/90 and H10P30/28 should be considered in order to perform a complete search.	H10P95/90	H10P95/90		
H10P95/902	9	{for the formation of PN junctions without addition of impurities}	H10P95/90	H10P95/90		
H10P95/904	9	{of Group III-V semiconductors}<br><br><u>WARNING</u><br>Group H10P95/904 is impacted by reclassification into group H10P30/28. <br>Groups H10P95/904 and H10P30/28 should be considered in order to perform a complete search.	H10P95/90	H10P95/90		
H10P95/906	9	{for altering the shape of semiconductors, e.g. smoothing the surface}	H10P95/90	H10P95/90		
H10P95/92	8	{Formation of n- or p-type semiconductors, e.g. doping of graphene}<br><br><u>WARNING</u><br>Group H10P95/92 is impacted by reclassification into group H10P32/173. <br>Groups H10P95/92 and H10P32/173 should be considered in order to perform a complete search.	H10P95/00	H10P95/92		
H10P95/94	8	{Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}	H10P95/00	H10P95/94		
