C30B   1/00  \	0	0	4G077	C30B   1/00	25	꤫ľñ뾽ĹʶϾʪΰϽУã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]
C30B   1/02  \	1	1	4G077	C30B   1/02	386	ǮˤΡ㡥ľߡʣã£ͥˡΣ	by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) [3]
C30B   1/04  \	2	2	4G077	C30B   1/04	98	Ʒ뾽Σ	Isothermal recrystallisation [3]
C30B   1/06  \	2	2	4G077	C30B   1/06	48	ٸ۲ǤκƷ뾽Σ	Recrystallisation under a temperature gradient [3]
C30B   1/08  \	3	3	4G077	C30B   1/08	122	Ʒ뾽Σ	Zone recrystallisation [3]
C30B   1/10  \	1	1	4G077	C30B   1/10	108	ȿޤ¿ȻˤΡΣ	by solid state reactions or multi-phase diffusion [3]
C30B   1/12  \	1	1	4G077	C30B   1/12	44	ĹΰϽˤΡΣ	by pressure treatment during the growth [3]
C30B   3/00  \	0	0	4G077	C30B   3/00	6	ϾʪΰϽСΣ	Unidirectional demixing of eutectoid materials [3]
C30B   5/00  \	0	0	4G077	C30B   5/00	26	뤫ñ뾽ĹݸήβǹԤΣã£ˡΣ	Single-crystal growth from gels (under a protective fluid C30B 27/00) [3]
C30B   5/02  \	1	1	4G077	C30B   5/02	3	ɡʪäΡΣ	with addition of doping materials [3]
C30B   7/00  \	0	0	4G077	C30B   7/00	156	ﲹǱΤޤѤϱդñ뾽Ĺ㡥ϱաͻޤΤΣã£Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΣã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]
C30B   7/02  \	1	1	4G077	C30B   7/02	35	ޤξȯˤΡΣ	by evaporation of the solvent [3]
C30B   7/04  \	2	2	4G077	C30B   7/04	38	ޤѤΡΣ	using aqueous solvents [3]
C30B   7/06  \	2	2	4G077	C30B   7/06	38	ޤѤΡΣ	using non-aqueous solvents [3]
C30B   7/08  \	1	1	4G077	C30B   7/08	122	ϱդѤˤΡΣ	by cooling of the solution [3]
C30B   7/10  \	1	1	4G077	C30B   7/10	603	ϤäΡ㡥ǮˡΣ	by application of pressure, e.g. hydrothermal processes [3]
C30B   7/12  \	1	1	4G077	C30B   7/12	22	ŲˤΡΣ	by electrolysis [3]
C30B   7/14  \	1	1	4G077	C30B   7/14	112	뾽ʪϱβȿˤΡΣ	the crystallising materials being formed by chemical reactions in the solution [3]
C30B   9/00  \	0	0	4G077	C30B   9/00	226	ͻޤѤͻդñ뾽ĹʥΡޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΤϣã£ƥ󥰤ˤΣã£뾽ФˤΣã£Ҥ줿뾽ĹΣã£ꥨԥĹˤΣã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]
C30B   9/02  \	1	1	4G077	C30B   9/02	45	ͻޤξȯˤΡΣ	by evaporation of the molten solvent [3]
C30B   9/04  \	1	1	4G077	C30B   9/04	35	ϱդѤˤΡΣ	by cooling of the solution [3]
C30B   9/06  \	2	2	4G077	C30B   9/06	91	ޤȤƷ뾽ΰʬѤΡΣ	using as solvent a component of the crystal composition [3]
C30B   9/08  \	2	2	4G077	C30B   9/08	18	¾ޤѤΡΣ	using other solvents [3]
C30B   9/10  \	3	3	4G077	C30B   9/10	148	°ޡΣ	Metal solvents [3]
C30B   9/12  \	3	3	4G077	C30B   9/12	185	ޡ㡥եåĹΣ	Salt solvents, e.g. flux growth [3]
C30B   9/14  \	1	1	4G077	C30B   9/14	13	ŲˤΡΣ	by electrolysis [3]
C30B  11/00  \	0	0	4G077	C30B  11/00	299	Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤñ뾽Ĺ㡥֥åޥ󡽥ȥåСˡʣã£ã£ã£ã£ͥ表ݸήβǹԤΣã£ˡΣ	Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]
C30B  11/00  C	0	0	4G077	C30B  11/00	647	Ĥƴ	Melting pots or containers
C30B  11/00  Z	0	0	4G077	C30B  11/00	1138	¾	Others
C30B  11/02  \	1	1	4G077	C30B  11/02	127	ޤѤʤΡʣã£ͥˡΣ	without using solvents (C30B 11/06 takes precedence) [3]
C30B  11/04  \	1	1	4G077	C30B  11/04	150	ͻ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the melt [3]
C30B  11/06  \	2	2	4G077	C30B  11/06	234	뾽ʬǤϤʤʤȤ⣱ĤʬäΡΣ	at least one but not all components of the crystal composition being added [3]
C30B  11/08  \	2	2	4G077	C30B  11/08	92	뾽˷뾽ƤʬäΡΣ	every component of the crystal composition being added during the crystallisation [3]
C30B  11/10  \	3	3	4G077	C30B  11/10	93	Τޤϱʬ㡥٥̡ˡΣ	Solid or liquid components, e.g. Verneuil method [3]
C30B  11/12  \	3	3	4G077	C30B  11/12	72	ʬ㡥꡽꡽Ĺʣ֣̣ӡˡΣ	Vaporous components, e.g. vapour-liquid-solid-growth [3]
C30B  11/14  \	1	1	4G077	C30B  11/14	140	뾽ˤäħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. its crystallographic orientation [3]
C30B  13/00  \	0	0	4G077	C30B  13/00	558	ƥ󥰤ˤñ뾽Ĺƥ󥰤ˤʣã£ͥ表줿ΤѤѲΣã£ݸήβǹԤʤΣã£깽¤ͭѼ¿뾽ʪĹΤΤΣã£ˡΣ	Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [2006.01]
C30B  13/02  \	1	1	4G077	C30B  13/02	85	ޤѤ륾ƥ󥰡㡥ưˡΣ	Zone-melting with a solvent, e.g. travelling solvent process [3]
C30B  13/04  \	1	1	4G077	C30B  13/04	17	٥󥰤ˤѼΣ	Homogenisation by zone-levelling [3]
C30B  13/06  \	1	1	4G077	C30B  13/06	116	ͻ̤ˤ錄äƹʤΡΣ	the molten zone not extending over the whole cross-section [3]
C30B  13/08  \	1	1	4G077	C30B  13/08	48	ͻ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the molten zone [3]
C30B  13/10  \	2	2	4G077	C30B  13/10	54	ɡʪäΡΣ	with addition of doping materials [3]
C30B  13/12  \	3	3	4G077	C30B  13/12	49	ޤϾ֤ǡΣ	in the gaseous or vapour state [3]
C30B  13/14  \	1	1	4G077	C30B  13/14	123	ĤܤޤƴΣ	Crucibles or vessels [3]
C30B  13/16  \	1	1	4G077	C30B  13/16	96	ͻβǮΣ	Heating of the molten zone [3]
C30B  13/18  \	2	2	4G077	C30B  13/18	26	ǮǻҤͻܿޤϿҤΡΣ	the heating element being in contact with, or immersed in, the molten zone [3]
C30B  13/20  \	2	2	4G077	C30B  13/20	228	ͶƳˤΡ㡥ۥåȥ磻䵻ѡʣã£ͥˡΣ	by induction, e.g. hot wire technique (C30B 13/18&nbsp;takes precedence) [3]
C30B  13/22  \	2	2	4G077	C30B  13/22	87	ȼͤޤŵŤˤΡΣ	by irradiation or electric discharge [3]
C30B  13/24  \	3	3	4G077	C30B  13/24	271	żȤѤΡΣ	using electromagnetic waves [3]
C30B  13/26  \	1	1	4G077	C30B  13/26	32	ͻ¡Σ	Stirring of the molten zone [3]
C30B  13/28  \	1	1	4G077	C30B  13/28	188	ޤĴΣ	Controlling or regulating [3]
C30B  13/30  \	2	2	4G077	C30B  13/30	142	ͻΰ경ޤϷ桤㡥󥻥ȥ쥤ˤΡżˤΡ뾽̤Σ	Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3]
C30B  13/32  \	1	1	4G077	C30B  13/32	107	ޤϥҡΰưΣ	Mechanisms for moving either the charge or the heater [3]
C30B  13/34  \	1	1	4G077	C30B  13/34	51	뾽ˤäħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. by its crystallographic orientation [3]
C30B  15/00  \	0	0	4G077	C30B  15/00	142	ͻդΰФˤñ뾽Ĺ㡥祯륹ˡݸήβǹԤΣã£ˡΣ	Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]
C30B  15/00  P	0	0	4G077	C30B  15/00	73	ڥǥ夲ˡʥڥǥ夲ˡȤϸξθΰǮˤĤͻղʬ˼뾽򿻤ơñ뾽ΰ夲Ԥñ뾽ΰˡǤ롥	Pedestal pull-up method (Pedestal pull-up method is a single crystal fostering method that melts a part of solid materials and pulls up single crystal by soaking the seed in that area.)
C30B  15/00  Z	0	0	4G077	C30B  15/00	2674	¾	Others
C30B  15/02  \	1	1	4G077	C30B  15/02	653	ͻդ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the melt [3]
C30B  15/04  \	2	2	4G077	C30B  15/04	476	ɡʪäΡ㡥УܹѡΣ	adding doping materials, e.g. for n&ndash;p-junction [3]
C30B  15/06  \	1	1	4G077	C30B  15/06	77	ľФΣ	Non-vertical pulling [3]
C30B  15/08  \	1	1	4G077	C30B  15/08	154	ФΣ	Downward pulling [3]
C30B  15/10  \	1	1	4G077	C30B  15/10	1701	ͻդٻ뤿ΤĤܤޤƴΣ	Crucibles or containers for supporting the melt [3]
C30B  15/12  \	2	2	4G077	C30B  15/12	262	ŤĤˡΣ	Double crucible methods [3]
C30B  15/14  \	1	1	4G077	C30B  15/14	937	ͻդޤϷ뾽ʪβǮΣ	Heating of the melt or the crystallised materials [3]
C30B  15/16  \	2	2	4G077	C30B  15/16	45	ȼͤޤŵŤˤΡΣ	by irradiation or electric discharge [3]
C30B  15/18  \	2	2	4G077	C30B  15/18	30	ľ񹳲Ǯ˲ä¾βǮˡѤΡ㡥ڥǮѤΡΣ	using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3]
C30B  15/20  \	1	1	4G077	C30B  15/20	1097	ޤĴޤĴ̣ǣˡΣ	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  15/22  \	2	2	4G077	C30B  15/22	613	Ф줿뾽˵ͻΰ경ޤϷ桨뾽̤Σ	Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3]
C30B  15/24  \	3	3	4G077	C30B  15/24	108	ŪʤѤΡ㡥ɡʱ춡뾽ĹΣţƣǡѤã£ˡΣ	using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [3]
C30B  15/26  \	3	3	4G077	C30B  15/26	390	ƥӥ󸡽дѤΡޤϣдѤΡΣ	using television detectors; using photo or X-ray detectors [3]
C30B  15/28  \	3	3	4G077	C30B  15/28	206	뾽ޤͻդνѲѤΡ㡥եơˡΣ	using weight changes of the crystal or the melt, e.g. flotation methods [3]
C30B  15/30  \	1	1	4G077	C30B  15/30	368	ͻդޤϷ뾽žޤϰư뤿εʥեơˡã£ˡΣ	Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [3]
C30B  15/32  \	1	1	4G077	C30B  15/32	286	뾽ݻ㡥åΣ	Seed holders, e.g. chucks [3]
C30B  15/34  \	1	1	4G077	C30B  15/34	413	ޤϥåȤѤ춡뾽ĹʣţƣǡˡΣ	Edge-defined film-fed crystal growth using dies or slits [3]
C30B  15/36  \	1	1	4G077	C30B  15/36	274	뾽ˤħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. its crystallographic orientation [3]
C30B  17/00  \	0	0	4G077	C30B  17/00	120	Ĺͻդ˿뾽ؤñ뾽Ĺ㡥ʥå󡽥ݥˡʣã£ͥˡΣ	Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]
C30B  19/00  \	0	0	4G077	C30B  19/00	56	ꥨԥĹΣ	Liquid-phase epitaxial-layer growth [3]
C30B  19/00  S	0	0	4G077	C30B  19/00	480	饤ˡʥ饤ˡȤϥ饤ݤȥܡݥȤȤŪ˳ưʤ顤饤ݤ˺ܤ줿Ĥȥܡݥɤ˼Ƥ줿ñ뾽ͻդȤܿ뤳ȤˤĤơɽ̤ñ뾽ؤĹñ뾽ΰˡǤ롥	Sliding method (Sliding method refers to fostering method of single crystal that enables growth of single crystal layer on substrate surface by putting the substrate in contact with the single-crystal material melt stored in the board while relatively sliding slider and boat.)
C30B  19/00  Z	0	0	4G077	C30B  19/00	809	¾	Others
C30B  19/02  \	1	1	4G077	C30B  19/02	388	ͻޤѤΡ㡥եåΣ	using molten solvents, e.g. flux [3]
C30B  19/04  \	2	2	4G077	C30B  19/04	434	ޤ뾽ΰʬǤΡΣ	the solvent being a component of the crystal composition [3]
C30B  19/06  \	1	1	4G077	C30B  19/06	96	ȿͻջٻѥܡȡݻΡΣ	Reaction chambers; Boats for supporting the melt; Substrate holders [3]
C30B  19/06  S	1	0	4G077	C30B  19/06	528	饤ˡ	Sliding method
C30B  19/06  Z	1	0	4G077	C30B  19/06	517	¾	Others
C30B  19/08  \	1	1	4G077	C30B  19/08	75	ȿޤϴĤβǮΣ	Heating of the reaction chamber or the substrate [3]
C30B  19/10  \	1	1	4G077	C30B  19/10	203	ޤĴޤĴ̣ǣˡΣ	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  19/12  \	1	1	4G077	C30B  19/12	471	ĤˤäħŤ줿ΡΣ	characterised by the substrate [3]
C30B  21/00  \	0	0	4G077	C30B  21/00	18	ʪΰǲΣ	Unidirectional solidification of eutectic materials [3]
C30B  21/02  \	1	1	4G077	C30B  21/02	79	̾¤ޤϲٸ۶ŸǤˤΡΣ	by normal casting or gradient freezing [3]
C30B  21/04  \	1	1	4G077	C30B  21/04	21	ƥ󥰤ˤΡΣ	by zone-melting [3]
C30B  21/06  \	1	1	4G077	C30B  21/06	16	ͻդΰФˤΡΣ	by pulling from a melt [3]
C30B  23/00  \	0	0	4G077	C30B  23/00	426	ȯޤϾڤʪζŸǤˤñ뾽ĹΣ	Single-crystal growth by condensing evaporated or sublimed materials [3]
C30B  23/02  \	1	1	4G077	C30B  23/02	565	ԥĹΣ	Epitaxial-layer growth [3]
C30B  23/04  \	2	2	4G077	C30B  23/04	48	ѥ졤㡥ޥѤΡΣ	Pattern deposit, e.g. by using masks [3]
C30B  23/06  \	2	2	4G077	C30B  23/06	677	켼ĤޤȯʪβǮΣ	Heating of the deposition chamber, the substrate, or the materials to be evaporated [3]
C30B  23/08  \	2	2	4G077	C30B  23/08	149	󲽾ζŽ̤ˤΡȿѥå󥰤ˤΣã£ˡΣ	by condensing ionised vapours (by reactive sputtering C30B 25/06) [3]
C30B  23/08  M	2	0	4G077	C30B  23/08	1807	ʬˤ	By molecular beam
C30B  23/08  P	2	0	4G077	C30B  23/08	103	ץ饺ޤѤ	Using plasma
C30B  23/08  Z	2	0	4G077	C30B  23/08	502	¾	Others
C30B  25/00  \	0	0	4G077	C30B  25/00	380	ȿβȿˤñ뾽Ĺ㡥ؾʣã֣ġˤˤĹΣ	Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3]
C30B  25/02  \	1	1	4G077	C30B  25/02	313	ԥĹΣ	Epitaxial-layer growth [3]
C30B  25/02  P	1	0	4G077	C30B  25/02	413	ץ饺ޤѤ	Using plasma
C30B  25/02  Z	1	0	4G077	C30B  25/02	1813	¾	Others
C30B  25/04  \	2	2	4G077	C30B  25/04	276	ѥ졤㡥ޥѤΡΣ	Pattern deposit, e.g. by using masks [3]
C30B  25/06  \	2	2	4G077	C30B  25/06	157	ȿѥå󥰤ˤΡΣ	by reactive sputtering [3]
C30B  25/08  \	2	2	4G077	C30B  25/08	413	ȿΤκΣ	Reaction chambers; Selection of materials therefor [3]
C30B  25/10  \	2	2	4G077	C30B  25/10	567	ȿޤϴĤβǮΣ	Heating of the reaction chamber or the substrate [3]
C30B  25/12  \	2	2	4G077	C30B  25/12	955	ݻΤޤϥץΣ	Substrate holders or susceptors [3]
C30B  25/14  \	2	2	4G077	C30B  25/14	2187	ζ뤪ӽмʡȿήĴΣ	Feed and outlet means for the gases; Modifying the flow of the reactive gases [3]
C30B  25/16  \	2	2	4G077	C30B  25/16	684	ޤĴޤĴ̣ǣˡΣ	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  25/18  \	2	2	4G077	C30B  25/18	1668	ĤˤäħŤ줿ΡΣ	characterised by the substrate [3]
C30B  25/20  \	3	3	4G077	C30B  25/20	826	ĤԥؤƱʪǤΡΣ	the substrate being of the same materials as the epitaxial layer [3]
C30B  25/22  \	2	2	4G077	C30B  25/22	28	ɥåץΣ	Sandwich processes [3]
C30B  27/00  \	0	0	4G077	C30B  27/00	173	ݸήβˤñ뾽ĹΣ	Single-crystal growth under a protective fluid [3]
C30B  27/02  \	1	1	4G077	C30B  27/02	1141	ͻդΰФˤΡΣ	by pulling from a melt [3]
C30B  28/00  \	0	0	4G077	C30B  28/00	15	깽¤ͭѼ¿뾽ʪ¤Σ	Production of homogeneous polycrystalline material with defined structure [5]
C30B  28/02  \	1	1	4G077	C30B  28/02	48	꤫ľܤˡΣ	directly from the solid state [5]
C30B  28/04  \	1	1	4G077	C30B  28/04	62	ΤΣ	from liquids [5]
C30B  28/06  \	2	2	4G077	C30B  28/06	70	Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΡΣ	by normal freezing or freezing under temperature gradient [5]
C30B  28/08  \	2	2	4G077	C30B  28/08	15	ƥ󥰤ˤΡΣ	by zone-melting [5]
C30B  28/10  \	2	2	4G077	C30B  28/10	18	ͻդΰФˤΡΣ	by pulling from a melt [5]
C30B  28/12  \	1	1	4G077	C30B  28/12	140	꤫ľܤˡΣ	directly from the gas state [5]
C30B  28/14  \	2	2	4G077	C30B  28/14	75	ȿβȿˤΡΣ	by chemical reaction of reactive gases [5]
C30B  29/00  \	0	0	4G077	C30B  29/00	15	ޤϷˤäħŤ줿ñ뾽ޤ깽¤ͭѼ¿뾽ʪΣ	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B  29/02  \	1	1	4G077	C30B  29/02	258	ǡΣ	Elements [3]
C30B  29/04  \	2	2	4G077	C30B  29/04	253	ɡΣ	Diamond [3]
C30B  29/04  A	2	0	4G077	C30B  29/04	165	ˡˤ¤γҤʤԡ	Making diamond film by gas state method (particle coating R T)
C30B  29/04  B	2	1	4G077	C30B  29/04	257	ץ饺ޤΡ̣áưʳΤΤޤϥץ饺ʤꤷƤʤΡ	Generating plasma (other than C to F, or with no specified means of generation)
C30B  29/04  C	2	2	4G077	C30B  29/04	207	ľήťץ饺ޤˤ	By DC discharge plasma
C30B  29/04  D	2	2	4G077	C30B  29/04	103	ȥץ饺ޤˤ	By high frequency plasma
C30B  29/04  E	2	2	4G077	C30B  29/04	484	ޥȥץ饺ޤˤΡʣȣߡ	By microwave plasma
C30B  29/04  F	2	2	4G077	C30B  29/04	46	ȥĥץ饺ޤˤ	By cyclotron resonance plasma
C30B  29/04  G	2	1	4G077	C30B  29/04	194	ǮΡ㡥ǮեȡǮġͤˤ긶ΡʷϵǮޤ	Activating material gas by heating body, e.g. heat filament, heating substrate (including atmospheric heating)
C30B  29/04  H	2	1	4G077	C30B  29/04	80	ǳƱˤ긶	Activating material gas by combustion flame
C30B  29/04  J	2	1	4G077	C30B  29/04	60	ǮŻҾȼͤˤ긶	Activating material gas by thermal electronic irradiation
C30B  29/04  K	2	1	4G077	C30B  29/04	73	ȼͤˤ긶	Activating material gas by light irradiation
C30B  29/04  L	2	1	4G077	C30B  29/04	32	ӡݥȼͤˤ긶	Activating material gas by ion beam irradiation
C30B  29/04  M	2	1	4G077	C30B  29/04	56	塤ѥĥ󥰤ˤ	By vacuum evaporation, sputtering
C30B  29/04  N	2	1	4G077	C30B  29/04	64	¡ͤΤ褦ʤꤷƤʤ	With no specified diaphragm forming means as in B to M
C30B  29/04  P	2	2	4G077	C30B  29/04	158	ĺħ	Characterized by substrate materials
C30B  29/04  Q	2	2	4G077	C30B  29/04	481	ĤνħΡ㡥ɽ̽ؤη	Characterized by treatment of substrate, e.g. surface treatment, formation of intermediate layer)
C30B  29/04  R	2	2	4G077	C30B  29/04	193	ħ	Characterized by composition of material gas
C30B  29/04  S	2	0	4G077	C30B  29/04	126	ˡˤʳη㡥γͤΥɤ¤	Manufacture of diamond in shapes, e.g. particles, other than film using gas state method
C30B  29/04  T	2	0	4G077	C30B  29/04	39	ˡˤɤ¾κγҤʤ	Coating other material particles for diamonds using gas state method
C30B  29/04  U	2	0	4G077	C30B  29/04	137	ˡˤʤɤ¤	Manufacture of diamond not using gas state method
C30B  29/04  V	2	0	4G077	C30B  29/04	368	ɷ뾽ν	Treatment of diamond crystals
C30B  29/04  W	2	0	4G077	C30B  29/04	329	ɤʤϥɤޤʪ	Articles comprised of or containing diamonds
C30B  29/04  X	2	1	4G077	C30B  29/04	365	ɽ̤˵ˡʤܤʪ	Articles with gas state method diamond coating on substrate surface
C30B  29/04  Z	2	0	4G077	C30B  29/04	71	¾	Others
C30B  29/06  \	2	2	4G077	C30B  29/06	734	ꥳΣ	Silicon [3]
C30B  29/06  A	2	0	4G077	C30B  29/06	557	뾽ΤħΡ㡥Խʪǻ١ʪ뾽̤	Characterized by crystal per se, e.g. concentration of impurities, physical properties, determination of crystal direction
C30B  29/06  B	2	0	4G077	C30B  29/06	589	뾽θ	After-treatment of crystals
C30B  29/06  C	2	0	4G077	C30B  29/06	158	ӣη뾽Ѥʪ	Articles using Si crystals
C30B  29/06  D	2	0	4G077	C30B  29/06	289	뾽ĹѤΣӣ¤㡥¿뾽ꥳ¤	Manufacture of Si materials for crystal growth, e.g. manufacture of high-purity polycrystalline silicon rod
C30B  29/06  Z	2	0	4G077	C30B  29/06	171	¾	Others
C30B  29/06 501 \	3	3	4G077	C30B  29/06	10	꤫Ĺ	Growth from liquid phase
C30B  29/06 501 A	3	0	4G077	C30B  29/06	220	ݥƥ󥰤ˤĹ	Growth by zone melting
C30B  29/06 501 B	3	0	4G077	C30B  29/06	100	ꥨԥĹ	Liquid phase epitaxitial growth
C30B  29/06 501 Z	3	0	4G077	C30B  29/06	311	¾	Others
C30B  29/06 502 \	4	4	4G077	C30B  29/06	32	夲ˡˤ	By pull-up method
C30B  29/06 502 A	4	0	4G077	C30B  29/06	351	ʴζ롤ͻդη	Supply of material powder, formation of a melt
C30B  29/06 502 B	4	0	4G077	C30B  29/06	1005	Ĥܡ̤Ĥܤ˰β̩夷ƻѤ뼣ޤ	Melting pots (including jigs used by being part of, or being sticking together with melting pot)
C30B  29/06 502 C	4	0	4G077	C30B  29/06	513	夲ϧǻѤ뼣㡤ǮġݲͤħΡ̣Ťͥ	Jigs used inside pull-up furnaces, e.g. heat shield plates, heat-retention tubes etc. (E takes precedence)
C30B  29/06 502 D	4	1	4G077	C30B  29/06	35	ͻ֤Ρ̣Ťͥ	Placed inside a melt (E takes precedence)
C30B  29/06 502 E	4	0	4G077	C30B  29/06	389	ǮѼʤħ	Characterized by heating, cooling means
C30B  29/06 502 F	4	0	4G077	C30B  29/06	280	뾽ڤӼ뾽ݻ夲֤ħ	Characterized by the seed and see crystal retention, pull-up devices
C30B  29/06 502 G	4	0	4G077	C30B  29/06	396	Ѥ	Using magnetic field
C30B  29/06 502 H	4	0	4G077	C30B  29/06	792	ԽʪԲԽʪ̤	Controlling the volume of impurities, inevitable impurities
C30B  29/06 502 J	4	0	4G077	C30B  29/06	481	夲®١ẓ̌Ȥͥ	Control of pull-up speed, rotating speed (H takes precedence)
C30B  29/06 502 K	4	0	4G077	C30B  29/06	246	ϧʷϵĴʷϵζ롤ӽСĴ	Adjustment of atmosphere inside pull-up furnace (supply, discharge, pressure adjustment of atmospheric gas)
C30B  29/06 502 Z	4	0	4G077	C30B  29/06	486	¾	Others
C30B  29/06 503 \	3	3	4G077	C30B  29/06	178	ͻդľӾꥳΰФ	Pulling up plate, strip silicon from a melt
C30B  29/06 504 \	3	3	4G077	C30B  29/06	4	꤫Ĺ	Growth from gas state
C30B  29/06 504 A	3	0	4G077	C30B  29/06	99	ؤĹ	Growth to film on substrate
C30B  29/06 504 B	3	1	4G077	C30B  29/06	58	ħ	Characterized by selection of material gas, composition
C30B  29/06 504 C	3	1	4G077	C30B  29/06	94	ζ롦ӽСήħ	Characterized by supply/discharge, flow of material gas,
C30B  29/06 504 D	3	1	4G077	C30B  29/06	42	ĤβǮѤμʡˡħ	Characterized by heating, cooling means, methods of substrate
C30B  29/06 504 E	3	1	4G077	C30B  29/06	70	ĺħΡ̣Ƥͥ	Characterized by selection of substrate materials (F takes precedence)
C30B  29/06 504 F	3	1	4G077	C30B  29/06	150	Ĥν̣ʤͥ͡ľˣӣʾƤΤӣĹΡ㡥Хĥեη	Treatment of substrates (J takes precedence); Forming film of Si and above on substrate that later grows into Si film, e.g. formation of buffer film
C30B  29/06 504 G	3	1	4G077	C30B  29/06	41	ӣʾʬĹ	Growing Si film in two or more processes
C30B  29/06 504 H	3	1	4G077	C30B  29/06	27	ӣľλΰĹΡ̣ʤͥ	Growing Si film on time constant area of substrate (J takes precedence)
C30B  29/06 504 J	3	1	4G077	C30B  29/06	36	ľμҷ뾽Ĺ	Growing on seed crystal of substrate
C30B  29/06 504 K	3	1	4G077	C30B  29/06	74	ľ˷ӣ˽ܤΡ㡥뾽ӣñ뾽ɡݥԥ󥰡	Applying treatment on Si film formed on substrate, e.g. single crystallisation of  noncrystalline Si film, doping
C30B  29/06 504 L	3	1	4G077	C30B  29/06	97	ĹѤ֡ħΡ㡥Ļٻ桤٥른ݡáˤͥ	Characterized by devices, jigs for gas state growth, e.g. substrate support, bell jar, C to K Take precedence
C30B  29/06 504 Z	3	0	4G077	C30B  29/06	70	¾	Others
C30B  29/08  \	2	2	4G077	C30B  29/08	122	ޥ˥Σ	Germanium [3]
C30B  29/10  \	1	1	4G077	C30B  29/10	275	̵ʪޤʪΣ	Inorganic compounds or compositions [3]
C30B  29/12  \	2	2	4G077	C30B  29/12	597	ϥʪΣ	Halides [3]
C30B  29/14  \	2	2	4G077	C30B  29/14	114	Σ	Phosphates [3]
C30B  29/16  \	2	2	4G077	C30B  29/16	1310	ʪΣ	Oxides [3]
C30B  29/18  \	3	3	4G077	C30B  29/18	323	бѡΣ	Quartz [3]
C30B  29/20  \	3	3	4G077	C30B  29/20	770	ߥ˥Σ	Aluminium oxides [3]
C30B  29/22  \	3	3	4G077	C30B  29/22	95	ʣʪΣ	Complex oxides [3]
C30B  29/22  A	3	0	4G077	C30B  29/22	171	ͭΡ̣Ƥϥ饹ȥץݥݥŬѡ	Containing Al (Apply right place rule for A to F)
C30B  29/22  B	3	1	4G077	C30B  29/22	39	£좭Ϣ̥꥽٥롤쥭ɥ饤ȡ	BeAl2O4 (chrysoberyl, alexandrite)
C30B  29/22  C	3	0	4G077	C30B  29/22	193	¤ͭ	Containing
C30B  29/22  D	3	0	4G077	C30B  29/22	94	£ͭ	Containing
C30B  29/22  F	3	0	4G077	C30B  29/22	284	ե饤	Ferrite
C30B  29/22  G	3	1	4G077	C30B  29/22	110	ͣȣڣȤޤ	Containing Mn and Zn
C30B  29/22  Z	3	0	4G077	C30B  29/22	1271	¾	Others
C30B  29/22 501 \	4	4	4G077	C30B  29/22	7	ĶƳ	Superconducting materials
C30B  29/22 501 A	4	0	4G077	C30B  29/22	101	꤫Ĺ	Growth from solid state
C30B  29/22 501 B	4	0	4G077	C30B  29/22	214	꤫Ĺ	Growth from liquid state
C30B  29/22 501 C	4	1	4G077	C30B  29/22	88	ľĶƳؤ	Forming superconducting layer on substrate
C30B  29/22 501 D	4	0	4G077	C30B  29/22	25	ˡˤĹ	Growth by gas state method
C30B  29/22 501 E	4	1	4G077	C30B  29/22	224	ľĶƳؤ	Forming superconducting layer on substrate
C30B  29/22 501 H	4	2	4G077	C30B  29/22	180	ѥĥ󥰤ˤΡ̣ʡΤͥ	By sputtering (J to N take precedence)
C30B  29/22 501 J	4	2	4G077	C30B  29/22	136	Ĥħ	Characterized by selection of substrate
C30B  29/22 501 K	4	2	4G077	C30B  29/22	205	ĤνĤĶƳؤȤδ֤ؤ	Treatment of substrates, forming intermediate layer between substrate and superconducting layer
C30B  29/22 501 L	4	2	4G077	C30B  29/22	65	ĶƳؤ˽ܤΡ㡥Ǯ	Applying treatment on superconducting layer after making of film, e.g. heat treatment, ion injection treatment etc.
C30B  29/22 501 M	4	2	4G077	C30B  29/22	80	ĶƳؤʣؤ˷ĶƳؤɽ̤˹¾κؤ	Forming superconducting layer on multiple layers or forming layer of other materials on the surface of superconducting layer
C30B  29/22 501 N	4	0	4G077	C30B  29/22	113	ĶƳѤʪʤӤħΤΡ㡥ȾƳ֡ȾƳδġ	Characterized by the purpose of articles using superconducting materials, e.g. semiconductor devices, semiconductor substrates, wires
C30B  29/22 501 P	4	0	4G077	C30B  29/22	33	ĶƳ뾽θħΡ̣̤ͥ	Characterized by after-treatment of superconducting crystals (L takes precedence)
C30B  29/22 501 Z	4	0	4G077	C30B  29/22	53	¾	Others
C30B  29/24  \	4	4	4G077	C30B  29/24	139	ͣϢͭΡǣϴ°ޤϣͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣ졤㡥륽ե饤ȡΣ	with formula AMeO<sub>3</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3]
C30B  29/26  \	4	4	4G077	C30B  29/26	89	£ͣ墭ϢͭΡǣ¤ϣͣ硤Σ顤ã졤ڣޤϣãޤͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣΣ	with formula BMe<sub>2</sub>O<sub>4</sub>, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3]
C30B  29/28  \	4	4	4G077	C30B  29/28	1130	ͣ墭ϢͭΡǣϴ°ޤͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣ졤㡥ͥåȡΣ	with formula A<sub>3</sub>Me<sub>5</sub>O<sub>12</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3]
C30B  29/30  \	4	4	4G077	C30B  29/30	74	˥ֻХʥ󥿥Σ	Niobates; Vanadates; Tantalates [3]
C30B  29/30  A	4	0	4G077	C30B  29/30	693	˥ֻ̣äͥ	Niobates (C takes precedence)
C30B  29/30  B	4	0	4G077	C30B  29/30	561	󥿥̣äͥ	Tantalates (C takes precedence)
C30B  29/30  C	4	0	4G077	C30B  29/30	105	˥֤ȥ󥿥Ȥޤ	Containing niobates and tantalates
C30B  29/30  D	4	0	4G077	C30B  29/30	49	Хʥ	Vanadates
C30B  29/30  Z	4	0	4G077	C30B  29/30	14	¾	Others
C30B  29/32  \	4	4	4G077	C30B  29/32	89	ޥ˥֥ǥ󥰥ƥΣ	Titanates; Germanates; Molybdates; Tungstates [3]
C30B  29/32  A	4	0	4G077	C30B  29/32	166		Titanates
C30B  29/32  B	4	1	4G077	C30B  29/32	52	륫°Υ	Titanates of alkaline metal
C30B  29/32  C	4	1	4G077	C30B  29/32	176	륫°Υ	Titanates of alkaline earth metal
C30B  29/32  D	4	1	4G077	C30B  29/32	137		Lead titanates
C30B  29/32  G	4	0	4G077	C30B  29/32	70	ޥ˥	Germanates
C30B  29/32  M	4	0	4G077	C30B  29/32	47	֥ǥ	Molybdates
C30B  29/32  W	4	0	4G077	C30B  29/32	34	󥰥ƥ	Tungstates
C30B  29/32  Z	4	0	4G077	C30B  29/32	26	¾	Others
C30B  29/34  \	2	2	4G077	C30B  29/34	16	Σ	Silicates [3]
C30B  29/34  A	2	0	4G077	C30B  29/34	60	٥̣£ϡݣ좭ϢݣӣϢ	Beryls (BeO-Al2O3-SiO2)
C30B  29/34  Z	2	0	4G077	C30B  29/34	308	¾	Others
C30B  29/36  \	2	2	4G077	C30B  29/36	77	úʪΣ	Carbides [3]
C30B  29/36  A	2	0	4G077	C30B  29/36	3577	ú	Carbides
C30B  29/36  Z	2	0	4G077	C30B  29/36	48	¾	Others
C30B  29/38  \	2	2	4G077	C30B  29/38	201	ⲽʪΣ	Nitrides [3]
C30B  29/38  A	2	0	4G077	C30B  29/38	127	¤ޤΡ㡥£Ρ£ãΡ	Containing B, e.g. BN, BCN
C30B  29/38  B	2	0	4G077	C30B  29/38	56	ӣޤΡ㡥ӣ颭΢	Containing Si, e.g. Si3N4
C30B  29/38  C	2	0	4G077	C30B  29/38	841	ޤΡ㡥Ρ	Containing Al, e.g. AIN
C30B  29/38  D	2	0	4G077	C30B  29/38	3878	ǣޤΡ㡥ǣΡ	Containing Ga, e.g. GaN
C30B  29/38  Z	2	0	4G077	C30B  29/38	159	¾	Others
C30B  29/40  \	2	2	4G077	C30B  29/40	1337	ɣɣɣ£ֲʪΣ	A<sub>III</sub>B<sub>V</sub> compounds [3]
C30B  29/40  A	2	0	4G077	C30B  29/40	122	뾽ΤħΡ㡨뾽ʪԽʪǻ٤	Characterized by crystal per se, e.g. determination of  physical properties and concentration of impurities in crystal
C30B  29/40  B	2	0	4G077	C30B  29/40	76	뾽ĹѤθι	Synthesis, refining of materials for crystal growth
C30B  29/40  C	2	0	4G077	C30B  29/40	154	뾽ν	Treatment of crystals
C30B  29/40  D	2	0	4G077	C30B  29/40	58	£ֲʪ뾽Ѥʪʤ	Purpose of articles using A3BV compound crystal
C30B  29/40  Z	2	0	4G077	C30B  29/40	64	¾	Others
C30B  29/40 501 \	3	3	4G077	C30B  29/40	1	꤫Ĺ	Growth from liquid state
C30B  29/40 501 A	3	0	4G077	C30B  29/40	247	夲ˡˤ	By pull-up method
C30B  29/40 501 B	3	0	4G077	C30B  29/40	205	꤫ľĹ	Growing film on substrate from liquid state
C30B  29/40 501 C	3	0	4G077	C30B  29/40	213	Ρݥޥեݥϲٸ۶ŸǤˤ	By normal freezing or temperature gradient coagulation
C30B  29/40 501 D	3	0	4G077	C30B  29/40	22	Ӱͻˡˤ	By band melting method
C30B  29/40 501 E	3	0	4G077	C30B  29/40	5	ϼȻˡˤ	By solute synthesis diffusion method
C30B  29/40 501 Z	3	0	4G077	C30B  29/40	21	¾	Others
C30B  29/40 502 \	3	3	4G077	C30B  29/40	7	꤫Ĺ	Growth from gas state
C30B  29/40 502 A	3	0	4G077	C30B  29/40	81	ľؤĹʬˤΤϡˤء	Growth of film on substrate (by molecular beam K)
C30B  29/40 502 B	3	1	4G077	C30B  29/40	48	ħ	Characterized by selection of material gas
C30B  29/40 502 C	3	2	4G077	C30B  29/40	57	²ʳʬ㡥Խʪꥢݥͤħ	Characterized by selection of ingredient gas other than 3, V group, e.g. impurity gas, carrier gas
C30B  29/40 502 D	3	1	4G077	C30B  29/40	97	롤ӽФħ	Generation, supply, discharge of material gas
C30B  29/40 502 E	3	2	4G077	C30B  29/40	84	ζ̡ʬĹѲΡ㡨ʬߤ˶뤹Ρʬζ̤ѤΡ	Changing supply volume, mix of material gas during growth, e.g. alternately supplying ingredients, changing supply volume of certain ingredient
C30B  29/40 502 F	3	1	4G077	C30B  29/40	57	ĺħΤ	Characterized by substrate materials
C30B  29/40 502 G	3	1	4G077	C30B  29/40	51	Ĥν̴ľ¾򥳡ݥƥ󥰤ƤΤĹΤϡȤء	Treatment of substrates (Forming other film of Si on substrate that later growing it, H)
C30B  29/40 502 H	3	1	4G077	C30B  29/40	183	ĤĹؤȤδ֤¾ء㡥ХĥեءͤϴľʣĹؤ	Forming other layer between substrate and growth layer, e.g. buffer layer, or forming multiple growth layers on substrate
C30B  29/40 502 J	3	1	4G077	C30B  29/40	26	ľΰĹ	Growing on certain areas of substrate
C30B  29/40 502 K	3	1	4G077	C30B  29/40	133	ʬˤĹ	Growing by molecular beam
C30B  29/40 502 L	3	0	4G077	C30B  29/40	14	ʳηη뾽ˡ	Obtaining crystal of shapes other than film from the gas method
C30B  29/40 502 Z	3	0	4G077	C30B  29/40	23	¾	Others
C30B  29/42  \	3	3	4G077	C30B  29/42	1276	ҲꥦΣ	Gallium arsenide [3]
C30B  29/44  \	3	3	4G077	C30B  29/44	186	󲽥ꥦΣ	Gallium phosphide [3]
C30B  29/46  \	2	2	4G077	C30B  29/46	249	βޤϥƥޤಽʪΣ	Sulfur-, selenium- or tellurium-containing compounds [3]
C30B  29/48  \	3	3	4G077	C30B  29/48	960	ɣɣ£֣ɲʪΣ	A<sub>II</sub>B<sub>VI</sub> compounds [3]
C30B  29/50  \	4	4	4G077	C30B  29/50	19	βɥߥΣ	Cadmium sulfide [3]
C30B  29/52  \	2	2	4G077	C30B  29/52	404	Σ	Alloys [3]
C30B  29/54  \	1	1	4G077	C30B  29/54	292	ͭʪΣ	Organic compounds [3]
C30B  29/56  \	2	2	4G077	C30B  29/56	34	лΣ	Tartrates [3]
C30B  29/58  \	2	2	4G077	C30B  29/58	270	ʬҲʪΣ	Macromolecular compounds [3]
C30B  29/60  \	1	1	4G077	C30B  29/60	92	ˤħŤ줿ΡΣ	characterised by shape [3]
C30B  29/62  \	2	2	4G077	C30B  29/62	140	Ҥ뾽ޤϿ˾뾽Σ	Whiskers or needles [3]
C30B  29/62  A	2	0	4G077	C30B  29/62	110	ʪʣʪϡŤء	Oxides (composite oxides, E)
C30B  29/62  B	2	1	4G077	C30B  29/62	36	ߥ	Alumina
C30B  29/62  C	2	1	4G077	C30B  29/62	29		Titanium oxides
C30B  29/62  D	2	1	4G077	C30B  29/62	75		Zinc oxides
C30B  29/62  E	2	0	4G077	C30B  29/62	98	ʣʪǻ	Composite oxides; oxysalt
C30B  29/62  F	2	1	4G077	C30B  29/62	135		Titanates
C30B  29/62  G	2	1	4G077	C30B  29/62	41	β㡥β륷	Hydrosulphates, e.g. calcium sulphates
C30B  29/62  H	2	1	4G077	C30B  29/62	59	ۥ	Borates
C30B  29/62  J	2	0	4G077	C30B  29/62	27	úʪ	Carbides
C30B  29/62  K	2	1	4G077	C30B  29/62	43	ú	Silicon carbide
C30B  29/62  L	2	2	4G077	C30B  29/62	145	ǤȤ	Using silicon dioxide as material
C30B  29/62  M	2	2	4G077	C30B  29/62	24	ӣ顤ӣȤ	Using Si, Si alloy as material
C30B  29/62  N	2	2	4G077	C30B  29/62	43	ʬǲʪ㡨ͭǲʪϵξǲʪȤ	Using degradable silicon compounds, e.g. organic silicon compounds, or gaseous silicon compounds as material
C30B  29/62  P	2	2	4G077	C30B  29/62	29	úǥݤϽ	Refining or treatment of silicon carbide whisker
C30B  29/62  Q	2	0	4G077	C30B  29/62	70	ⲽʪ	Nitrides
C30B  29/62  R	2	1	4G077	C30B  29/62	94	ⲽ	Silicon nitride
C30B  29/62  S	2	0	4G077	C30B  29/62	128	ú	Carbon
C30B  29/62  U	2	0	4G077	C30B  29/62	94	°	Metals, alloys
C30B  29/62  V	2	0	4G077	C30B  29/62	58	¤ˡ̡¤륦ݤꤵƤʤΡ	Manufacturing method in general (with manufactured whiskers not specified)
C30B  29/62  W	2	0	4G077	C30B  29/62	61	ݤν̥ݤꤵƤʤΡ	Treatment of whisker (with whisker not specified)
C30B  29/62  Z	2	0	4G077	C30B  29/62	57	¾	Others
C30B  29/64  \	2	2	4G077	C30B  29/64	49	ʿ뾽㡥ġӾΤޤϱġΣ	Flat crystals, e.g. plates, strips or disks [5]
C30B  29/66  \	2	2	4G077	C30B  29/66	152	ʣʴŪη뾽㡥ɡΣ	Crystals of complex geometrical shape, e.g. tubes, cylinders [5]
C30B  29/68  \	2	2	4G077	C30B  29/68	183	ع¤ʤ뾽㡥ĶʻҡɡΣ	Crystals with laminate structure, e.g. "superlattices" [5]
C30B  30/00  \	0	0	4G077	C30B  30/00	72	ž졤졤ưͥ륮ޤϤ¾üʪŪκѤˤħŤñ뾽ޤ깽¤ͭѼ¿뾽ʪ¤Σ	Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]
C30B  30/02  \	1	1	4G077	C30B  30/02	74	žѤΡ㡥ŵʬΣ	using electric fields, e.g. electrolysis [5]
C30B  30/04  \	1	1	4G077	C30B  30/04	153	ѤΡΣ	using magnetic fields [5]
C30B  30/06  \	1	1	4G077	C30B  30/06	14	ŪưѤΡΣ	using mechanical vibrations [5]
C30B  30/08  \	1	1	4G077	C30B  30/08	125	̵ϤޤϤξﲼΤΡΣ	in conditions of zero-gravity or low gravity [5]
C30B  31/00  \	0	0	4G077	C30B  31/00	27	ñ뾽ޤ깽¤ͭѼ¿뾽ʪؤγȻޤϥɡֹΤ֡Σ	Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3,5]
C30B  31/02  \	1	1	4G077	C30B  31/02	175	֤γȻʪܿΡΣ	by contacting with diffusion materials in the solid state [3]
C30B  31/04  \	1	1	4G077	C30B  31/04	26	֤γȻʪܿΡΣ	by contacting with diffusion materials in the liquid state [3]
C30B  31/06  \	1	1	4G077	C30B  31/06	216	֤γȻʪܿΡΣ	by contacting with diffusion material in the gaseous state
C30B  31/08  \	2	2	4G077	C30B  31/08	11	ȻʪȻǤβʪǤΡΣ	the diffusion materials being a compound of the elements to be diffused [3]
C30B  31/10  \	2	2	4G077	C30B  31/10	40	ȿΤκΣ	Reaction chambers; Selection of materials therefor [3]
C30B  31/12  \	2	2	4G077	C30B  31/12	19	ȿβǮΣ	Heating of the reaction chamber [3]
C30B  31/14  \	2	2	4G077	C30B  31/14	51	ݻΤޤϥץΣ	Substrate holders or susceptors [3]
C30B  31/16  \	2	2	4G077	C30B  31/16	59	ζ뤪ӽмʡήĴΣ	Feed and outlet means for the gases; Modifying the flow of the gases [3]
C30B  31/18  \	2	2	4G077	C30B  31/18	20	ޤĴΣ	Controlling or regulating [3]
C30B  31/20  \	1	1	4G077	C30B  31/20	58	żȾȼͤޤγͤˤɡӥ󥰡Σ	Doping by irradiation with electromagnetic waves or by particle radiation [3]
C30B  31/22  \	2	2	4G077	C30B  31/22	233	ˤΡΣ	by ion-implantation [3]
C30B  33/00  \	0	0	4G077	C30B  33/00	1434	ñ뾽ޤ깽¤ͭѼ¿뾽ʪθʣã£ͥˡΣ	After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00&nbsp;takes precedence) [3,5]
C30B  33/02  \	1	1	4G077	C30B  33/02	1550	Ǯʣã£ã£ͥˡΣ	Heat treatment (C30B 33/04, C30B 33/06 take precedence) [5]
C30B  33/04  \	1	1	4G077	C30B  33/04	317	ž졤ޤγͤѤΡΣ	using electric or magnetic fields or particle radiation [5]
C30B  33/06  \	1	1	4G077	C30B  33/06	313	뾽ηΣ	Joining of crystals [5]
C30B  33/08  \	1	1	4G077	C30B  33/08	242	å󥰡Σ	Etching [5]
C30B  33/10  \	2	2	4G077	C30B  33/10	358	ϱդޤͻǡΣ	in solutions or melts [5]
C30B  33/12  \	2	2	4G077	C30B  33/12	262	ʷϵޤϥץ饺޲ǡΣ	in gas atmosphere or plasma [5]
C30B  35/00  \	0	0	4G077	C30B  35/00	430	ñ뾽ޤ깽¤ͭѼ¿뾽ʪĹ¤ޤϸΤäŬ礷¾ʬवʤ֡Σ	Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [3,5]
