H01S   1/00  \	0	0	5F070	H01S   1/00	394	᡼ʤޥΰǤżͤͶƳФѤ֡Σ	Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
H01S   1/02  \	1	1	5F070	H01S   1/02	368	ΡΣ	solid
H01S   1/04  \	1	1	5F070	H01S   1/04	4	ΡΣ	liquid
H01S   1/06  \	1	1	5F070	H01S   1/06	504	Σ	gaseous
H01S   3/00  \	0	0	5F172	H01S   3/00	115	졼ʤֳĻޤϻ糰ΰǤżͤͶƳФѤ֡ȾƳΥ졼ȣӣˡΣ	Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range (semiconductors lasers H01S?5/00)
H01S   3/00  A	0	0	5F172	H01S   3/00	1463	ѤħΤ	characterised by applications
H01S   3/00  B	0	1	5F172	H01S   3/00	2627	ݥˤù	Processing by lasers
H01S   3/00  F	0	1	5F172	H01S   3/00	798	졼ˤ¬ꡤ¬	Measurements or monitoring by lasers
H01S   3/00  G	0	0	5F172	H01S   3/00	1454	ݥ¬ꡤƻ	Measuring or monitoring of lasers
H01S   3/00  Z	0	0	5F172	H01S   3/00	279	¾Τ	Others
H01S   3/02  \	1	1	5F172	H01S   3/02	852	¤ŪʺΣ	Constructional details
H01S   3/03  \	2	2	5F071	H01S   3/03	127	졼ŴɡΣ	of gas laser discharge tubes [2]
H01S   3/03  L	2	0	5F071	H01S   3/03	283	ɤΤΤλٻաĴ	Supporting, mounting or adjusting positions of tubes per se
H01S   3/03  Z	2	0	5F071	H01S   3/03	1664	¾Τ	Others
H01S   3/032  \	3	3	5F071	H01S   3/032	414	Ť¤ΤΤΡ㡥żɤħˤΡΣ	for confinement of the discharge, e.g. by special features of the discharge constricting tube
H01S   3/034  \	3	3	5F071	H01S   3/034	865	ɤΡޤϴɤΰ֡㡥롤ʶĴ뤿Τޤϰ֤ͭȿͶȣӣˡΣ	Optical devices within, or forming part of, the tube, e.g. windows, mirrors (reflectors having variable properties or positions for initial adjustment of the resonator H01S  3/086)
H01S   3/036  \	3	3	5F071	H01S   3/036	1200	ɤ˾ޤϤޤϰݻ뤿μʡ㡥ανޤ佼۴Ĥ뤿μʡ㡥ɤΰϤˤ뤿ΤΡΣ	Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by getteringor replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
H01S   3/038  \	3	3	5F071	H01S   3/038	30	Ŷˡ㡥̤ηŪ֤ޤϹ¤Σ	Electrodes, e.g. special shape, configuration or composition
H01S   3/038  A	3	0	5F071	H01S   3/038	181	Ŷˤκ	materials of electrode
H01S   3/038  B	3	0	5F071	H01S   3/038	411	ͶźѤѤ	using dielectric action
H01S   3/038  Z	3	0	5F071	H01S   3/038	1548	¾Τ	Others
H01S   3/04  \	2	2	5F172	H01S   3/04	915	ǮŪʴ򤹤뤿֡Σ	Arrangements for thermal management [2006.01]
H01S   3/041  \	3	3	5F172	H01S   3/041	836	졼ΤΤΡΣ	for gas lasers
H01S   3/042  \	3	3	5F172	H01S   3/042	1061	Υ졼ΤΤΡΣ	for solid state lasers
H01S   3/05  \	1	1	5F172	H01S   3/05	246	Ūʶι¤ޤϷ޼Ĵ޼ηΣ	Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
H01S   3/06  \	2	2	5F172	H01S   3/06	868	޼ι¤ޤϷΣ	Construction or shape of active medium
H01S   3/063  \	3	3	5F172	H01S   3/063	656	Ƴϩ졼㡥졼Σ	Waveguide lasers, e.g. laser amplifiers
H01S   3/067  \	4	4	5F172	H01S   3/067	5447	եз졼Σ	Fibre lasers
H01S   3/07  \	3	3	5F172	H01S   3/07	1318	ʣʬΡ㡥ȡʣȣӣͥˡΣ	consisting of a plurality of parts, e.g. segments, optical fibres [2]
H01S   3/08  \	2	2	5F172	H01S   3/08	2319	ŪʶޤϤιǤι¤ޤϷΣ	Construction or shape of optical resonators or components thereof [1, 2, 2006.01, 2023.01]
H01S   3/08018  \	3	3	5F172	H01S   3/08018	251	⡼Σ	Mode suppression [2023.01]
H01S   3/08022  \	4	4	5F172	H01S   3/08022	143	ĥ⡼ɡʣĤζѤ⡼ȣӣˡΣ	Longitudinal modes (mode suppression using a plurality of resonators H01S 3/082) [2023.01]
H01S   3/08031  \	5	5	5F172	H01S   3/08031	24	ñ⡼͡Σ	Single-mode emission [2023.01]
H01S   3/08036  \	6	6	5F172	H01S   3/08036	62	ʬǻҡиǻҤޤʣǻҤѤΡΣ	using intracavity dispersive, polarising or birefringent elements [2023.01]
H01S   3/0804  \	4	4	5F172	H01S   3/0804	17	⡼ɤޤϲ⡼ɡΣ	Transverse or lateral modes [2023.01]
H01S   3/08045  \	5	5	5F172	H01S   3/08045	109	ñ⡼͡Σ	Single-mode emission [2023.01]
H01S   3/0805  \	5	5	5F172	H01S   3/0805	97	ˤΡ㡥ԥۡޤϥʥեåΣ	by apertures, e.g. pin-holes or knifeedges [2023.01]
H01S   3/081  \	3	3	5F172	H01S   3/081	398	İʾȿͶʤΡΣ	comprising more than two reflectors [2]
H01S   3/082  \	4	4	5F172	H01S   3/082	162	ʣĤζħդΡ㡥⡼ɤޤ뤿ΤΡΣ	defining a plurality of resonators, e.g. for mode selection or suppression [2, 2006.01]
H01S   3/083  \	4	4	5F172	H01S   3/083	1000	󥰥졼Σ	Ring lasers [2]
H01S   3/086  \	3	3	5F172	H01S   3/086	514	Ĵ뤿Τޤϰ֤ͭ룱İʾȿͶưΥ졼ϤΥѥ᡼ѲΣȣӣ졼ϤΰȣӣˡΣ	One or more reflectors having variable properties or positions for initial adjustment of the resonator (varying a parameter of the laser output during operation H01S 3/10; stabilisation of the laser output H01S 3/13) [2]
H01S   3/09  \	1	1	5F172	H01S   3/09	257	嵯ˡޤϤ֡㡥ݥԥ󥰡Σ	Processes or apparatus for excitation, e.g. pumping
H01S   3/091  \	2	2	5F172	H01S   3/091	535	Ūݥԥ󥰤ѤΡΣ	using optical pumping [2]
H01S   3/0915  \	3	3	5F172	H01S   3/0915	646	󥳥ҡȸˤΡΣ	by incoherent light
H01S   3/092  \	4	4	5F172	H01S   3/092	553	եåפΤΡʣȣӣͥˡΣ	by flash lamp [2]
H01S   3/093  \	5	5	5F172	H01S   3/093	312	嵯ͥ륮޼˽ޤϸΡΣ	focusing or directing the excitation energy into the active medium [2]
H01S   3/0933  \	4	4	5F172	H01S   3/0933	121	ȾƳΤΤΡ㡥ȯɡΣ	of a semiconductor, e.g. light emitting diode
H01S   3/0937  \	4	4	5F172	H01S   3/0937	2	ȯʪޤϲǳʪˤΡΣ	produced by exploding or combustible material
H01S   3/094  \	3	3	5F172	H01S   3/094	421	ҡȸˤΡΣ	by coherent light [2]
H01S   3/0941  \	4	4	5F172	H01S   3/0941	2448	ȾƳΥ졼Ρ㡥졼ɤΡΣ	of a semiconductor laser, e.g. of a laser diode
H01S   3/0943  \	4	4	5F172	H01S   3/0943	75	졼ΤΡΣ	of a gas laser
H01S   3/0947  \	4	4	5F172	H01S   3/0947	67	ͭǥ졼ΤΡΣ	of an organic dye laser
H01S   3/095  \	2	2	5F172	H01S   3/095	138	ؤޤǮݥԥ󥰤ѤΡΣ	using chemical or thermal pumping [2]
H01S   3/0951  \	3	3	5F172	H01S   3/0951	5	졼޼ΰäˤΡΣ	by increasing the pressure in the laser gas medium
H01S   3/0953  \	4	4	5F172	H01S   3/0953	47	ʥߥå졼ʤ졼޼ıĶ®ή®ãΡΣ	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds
H01S   3/0955  \	2	2	5F172	H01S   3/0955	6	⥨ͥ륮γҤˤݥԥ󥰤ѤΡΣ	using pumping by high energy particles
H01S   3/0957  \	3	3	5F172	H01S   3/0957	3	⥨ͥ륮ҳγҤˤΡΣ	by high energy nuclear particles
H01S   3/0959  \	3	3	5F172	H01S   3/0959	49	ŻҥӡˤΡΣ	by an electron beam
H01S   3/097  \	2	2	5F071	H01S   3/097	143	졼ΥŤˤΡΣ	by gas discharge of a gas laser [2]
H01S   3/097  A	2	0	5F071	H01S   3/097	2010	Ųϩ	Discharge circuits
H01S   3/097  Z	2	0	5F071	H01S   3/097	1254	¾Τ	Others
H01S   3/0971  \	3	3	5F071	H01S   3/0971	66	ڤä嵯ΡʣȣӣͥˡΣ	transversely excited (H01S  3/0975 takes precedence);;
H01S   3/0973  \	4	4	5F071	H01S   3/0973	70	޼̲᤹ʹȤͭΡΣ	having a travelling wave passing through the active medium
H01S   3/0975  \	3	3	5F071	H01S   3/0975	170	ͶƳޤ嵯ѤΡΣ	using inductive or capacitive excitation
H01S   3/0977  \	3	3	5F071	H01S   3/0977	403	ΥʤͭΡΣ	having auxiliary ionisation means
H01S   3/0979  \	3	3	5F071	H01S   3/0979	33	ʥߥå졼ʤ졼޼ıĶ®ή®ãΡΣ	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds
H01S   3/10  \	1	1	5F172	H01S   3/10	270	Ф줿ζ١ȿꡤиޤ桤㡥å󥰡ȡĴޤĴΣ	Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating [1, 2, 2006.01]
H01S   3/10  D	1	0	5F172	H01S   3/10	4205		light amplifier
H01S   3/10  Z	1	0	5F172	H01S   3/10	6122	¾Τ	Others
H01S   3/101  \	2	2	5F172	H01S   3/101	1577	졼а֤ޤѤʤ졼Σ	Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted [2]
H01S   3/102  \	2	2	5F172	H01S   3/102	238	޼椹뤳ȤˤΡ㡥嵯ˡޤ嵯֤椹뤳ȤˤΡʣȣӣͥˡΣ	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation (H01S 3/13 takes precedence) [4]
H01S   3/104  \	3	3	5F071	H01S   3/104	381	졼ˤΡΣ	in gas lasers [4]
H01S   3/105  \	2	2	5F172	H01S   3/105	320	ȿͶа֤ޤȿ椹뤳ȤˤΡʣȣӣͥˡΣ	by controlling the mutual position or the reflecting properties of the reflectors of the cavity (H01S 3/13 takes precedence) [4]
H01S   3/1055  \	3	3	5F172	H01S   3/1055	225	޳ʻҤˤäƹƤȿͶΣĤ椹ΡΣ	one of the reflectors being constituted by a diffraction grating [4]
H01S   3/106  \	2	2	5F172	H01S   3/106	557	֤줿ǻҤˤΡʣȣӣͥˡΣ	by controlling a device placed within the cavity (H01S 3/13 takes precedence) [4]
H01S   3/107  \	3	3	5F172	H01S   3/107	199	ŵǻҤѤΡ㡥ݥå륹̤ޤϥ̤򼨤ΡΣ	using electro-optic devices, e.g. exhibiting Pockels or Kerr effect [4, 2006.01]
H01S   3/108  \	3	3	5F172	H01S   3/108	574	ǻҤѤΡ㡥֥奢ޤϥޥ򼨤ΡΣ	using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering [4]
H01S   3/109  \	4	4	5F172	H01S   3/109	1407	ȿܡ㡥ĴȤȯΣ	Frequency multiplying, e.g. harmonic generation [4]
H01S   3/11  \	2	2	5F172	H01S   3/11	377	⡼ɥå󥰡ѥå󥰡¾Υ㥤ȥѥ륹ѡ㡥ӥƥԥ󥰡Σ	Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping [1, 2006.01, 2023.01]
H01S   3/1106  \	3	3	5F172	H01S   3/1106	219	⡼ɥå󥰡Σ	Mode locking [2023.01]
H01S   3/1109  \	4	4	5F172	H01S   3/1109	110	ǽư⡼ƱΣ	Active mode locking [2023.01]
H01S   3/1112  \	4	4	5F172	H01S   3/1112	84	ư⡼ƱΣ	Passive mode locking [2023.01]
H01S   3/1115  \	5	5	5F172	H01S   3/1115	41	β˰µۼΤѤΡΣ	using intracavity saturable absorbers [2023.01]
H01S   3/1118  \	6	6	5F172	H01S   3/1118	112	ȾƳβ˰µۼΡ㡥ȾƳβ˰µۼΥߥ顼Σӣţӣͣϡβ˰µۼΡΣãΣԡϡ㡥ܥʥΥ塼֡ΣãΣԡϤ˴ŤΡΣ	Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based [2023.01]
H01S   3/1123  \	3	3	5F172	H01S   3/1123	387	ѥå󥰡Σ	Q-switching [2023.01]
H01S   3/113  \	4	4	5F172	H01S   3/113	244	β˰µۼΤѤΡΣ	using intracavity saturable absorbers [2, 2006.01]
H01S   3/115  \	4	4	5F172	H01S   3/115	164	ŵǻҤѤΡΣ	using intracavity electro-optic devices [4, 2006.01]
H01S   3/117  \	4	4	5F172	H01S   3/117	255	βǻҤѤΡΣ	using intracavity acousto-optic devices [4, 2006.01]
H01S   3/121  \	4	4	5F172	H01S   3/121	70	εŪ֤ѤΡΣ	using intracavity mechanical devices [4, 2006.01]
H01S   3/123  \	5	5	5F172	H01S   3/123	29	žѤΡΣ	using rotating mirrors [4, 2006.01]
H01S   3/125  \	5	5	5F172	H01S   3/125	41	žץꥺѤΡΣ	using rotating prisms [4, 2006.01]
H01S   3/127  \	4	4	5F172	H01S   3/127	34	ʣΣѥåѤΡΣ	Plural Q-switches [4, 2006.01]
H01S   3/13  \	2	2	5F172	H01S   3/13	497	졼ϥѥ᡼㡥ȿޤϿΰΣ	Stabilisation of laser output parameters, e.g.
H01S   3/131  \	3	3	5F172	H01S   3/131	745	޼椹뤳ȤˤΡ㡥嵯ˡޤ嵯֤椹뤳ȤˤΡΣ	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation [4]
H01S   3/134  \	4	4	5F071	H01S   3/134	987	졼ˤΡΣ	in gas lasers [4]
H01S   3/136  \	3	3	5F172	H01S   3/136	198	֤줿֤椹뤳ȤˤΡΣ	by controlling a device placed within the cavity [4]
H01S   3/137  \	4	4	5F172	H01S   3/137	547	ȿ경뤿ΤΡΣ	for stabilising of frequency [4]
H01S   3/139  \	3	3	5F172	H01S   3/139	439	ȿͶа֤ޤȿ椹뤳ȤˤΡΣ	by controlling the mutual position or the reflecting properties of the reflectors of the cavity [4]
H01S   3/14  \	1	1	5F172	H01S   3/14	35	޼ȤƻѤʪħΤΡΣ	characterised by the material used as the active medium
H01S   3/16  \	2	2	5F172	H01S   3/16	1293	ʪΣ	Solid materials
H01S   3/17  \	3	3	5F172	H01S   3/17	816	󾽼㡥饹Σ	amorphous, e.g. glass [2]
H01S   3/20  \	2	2	5F172	H01S   3/20	218	ΡΣ	Liquids
H01S   3/207  \	3	3	5F172	H01S   3/207	5	졼ȤޤΡΣ	including a chelate
H01S   3/213  \	3	3	5F172	H01S   3/213	400	ͭǤޤΡΣ	including an organic dye
H01S   3/22  \	2	2	5F071	H01S   3/22	377	Σ	Gases
H01S   3/223  \	3	3	5F071	H01S   3/223	273	¿ҡʤİʾθҤޤΡʣȣӣͥˡΣ	polyatomic [2]
H01S   3/225  \	4	4	5F071	H01S   3/225	490	ޤޤϥץåʤΡΣ	comprising an excimer or exciplex
H01S   3/227  \	3	3	5F071	H01S   3/227	105	°Σ	Metal vapour
H01S   3/23  \	1	1	5F172	H01S   3/23	1228	ȣӣʬवʤİʾΥ졼㡥ʬΥ줿޼ľȾƳΥ졼ΤߤޤΣȣӣˡΣ	Arrangement of two or more lasers not provided for in groups H01S 3/02-H01S 3/22, e.g. tandem arrangements of separate active media [2]
H01S   3/30  \	1	1	5F172	H01S   3/30	158	̡㡥ͶƳ֥奢̤ޤϥޥ̡ѤΡΣ	using scattering effects, e.g. stimulated Brillouin or Raman effects [2]
H01S   3/30  A	1	0	5F172	H01S   3/30	240	ͳŻҥ졼	free-electron lasers
H01S   3/30  Z	1	0	5F172	H01S   3/30	636	¾Τ	Others
H01S   4/00  \	0	0	5F172	H01S   4/00	81	롼ףȣӣȣӣޤϣȣӣޤΤȤϰۤʤäΰǤżͤͶƳФѤ֡㡥եΥ᡼졼ޤϥ졼Σ	Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S?1/00, H01S?3/00 or H01S?5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
H01S   5/00  \	0	0	5F173	H01S   5/00	27033	ȾƳΥ졼ʥѡߥͥåȥɣȣȣˡΣ	Semiconductor lasers  (superluminescent diodes H10H 20/00)
H01S   5/02  \	1	1	5F173	H01S   5/02	1199	졼ѤˤȤäܼŪǤϤʤ¤ŪʺޤϹΣ	Structural details or components not essential to laser action [7]
H01S   5/022  \	2	2	5F173	H01S   5/022	10624	ޥȡϥ󥰡Σ	Mountings; Housings [7]
H01S   5/02208  \	3	3	5F173	H01S   5/02208	3657	ϥ󥰤ηħΡΣ	characterised by the shape of the housings [2021.01]
H01S   5/02212  \	4	4	5F173	H01S   5/02212	1721	ãη㡥оμ˱äƤޤʿԤ˽мͤԣϡݣãΥϥ󥰡Σ	Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis [2021.01]
H01S   5/02216  \	4	4	5F173	H01S   5/02216	646	Хե饤㡥ϥ󥰤ʿ˱ӤƤŶ˥ԥͭΡΣ	Butterfly-type, i.e. with electrode pins extending horizontally from the housings [2021.01]
H01S   5/02218  \	3	3	5F173	H01S   5/02218	1687	ϥ󥰤κϥ󥰤νŶʪΣ	Material of the housings; Filling of the housings [2021.01]
H01S   5/0222  \	4	4	5F173	H01S   5/0222	282	ΤŶ줿ϥ󥰡Σ	Gas-filled housings [2021.01]
H01S   5/02224  \	5	5	5F173	H01S   5/02224	86	Ǥޤ൤Ρ㡥м̤αɻߤ뤿Σ	the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets [2021.01]
H01S   5/02232  \	4	4	5F173	H01S   5/02232	13	ΤŶ줿ϥ󥰡Σ	Liquid-filled housings [2021.01]
H01S   5/02234  \	4	4	5F173	H01S   5/02234	755	餬Ŷ줿ϥ󥰡Υϥ󥰡Σ	Resin-filled housings; the housings being made of resin [2021.01]
H01S   5/02235  \	3	3	5F173	H01S   5/02235	64	ۼ뤿ΥåΣ	Getter material for absorbing contamination [2021.01]
H01S   5/0225  \	3	3	5F173	H01S   5/0225	502	Ϸ礹ΡΣ	Out-coupling of light [2021.01]
H01S   5/02251  \	4	4	5F173	H01S   5/02251	3087	եФѤΡΣ	using optical fibres [2021.01]
H01S   5/02253  \	4	4	5F173	H01S   5/02253	1463	󥺤ѤΡΣ	using lenses [2021.01]
H01S   5/02255  \	4	4	5F173	H01S   5/02255	1204	ӡиǤѤΡΣ	using beam deflecting elements [2021.01]
H01S   5/02257  \	4	4	5F173	H01S   5/02257	2102	ѤΡ㡥ϥθд˸ơȿͤ뤿ˡäŬΡΣ	using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing [2021.01]
H01S   5/023  \	3	3	5F173	H01S   5/023	3899	ޥࡤ㡥֥ޥΣ	Mount members, e.g. sub-mount members [2021.01]
H01S   5/0231  \	4	4	5F173	H01S   5/0231	1137	ƥΣ	Stems [2021.01]
H01S   5/02315  \	4	4	5F173	H01S   5/02315	3163	ٻࡤ㡥١ꥢΣ	Support members, e.g. bases or carriers [2021.01]
H01S   5/0232  \	4	4	5F173	H01S   5/0232	232	꡼ɥե졼Σ	Lead-frames [2021.01]
H01S   5/02325  \	4	4	5F173	H01S   5/02325	1419	ޥޤϸإޥ٥ξ˵Ū˽Ѥ줿ǡΣ	Mechanically integrated components on mount members or optical micro-benches [2021.01]
H01S   5/02326  \	5	5	5F173	H01S   5/02326	742	졼ɤȸǤа֤Ĵ֡㡥եФޤϥ󥺤ꤹ뤿ΥޥȤι¡Σ	Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses [2021.01]
H01S   5/0233  \	3	3	5F173	H01S   5/0233	2349	졼åפμդιΣ	Mounting configuration of laser chips [2021.01]
H01S   5/02335  \	4	4	5F173	H01S   5/02335	384	åץɥåץޥȡ㡥Ĺ̤¦ˤޥȡϡܹ֤¦ˤޥȡΣ	Up-side up mountings, e.g. epi-side up mountings or junction up mountings [2021.01]
H01S   5/0234  \	4	4	5F173	H01S   5/0234	857	åץɥޥȡ㡥եåסåסĹ̤¦ˤޥȡܹ֤¦ˤޥȡΣ	Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings [2021.01]
H01S   5/02345  \	4	4	5F173	H01S   5/02345	725	磻ܥǥ󥰡Σ	Wire-bonding [2021.01]
H01S   5/0235  \	3	3	5F173	H01S   5/0235	354	졼åפμˡΣ	Method for mounting laser chips [2021.01]
H01S   5/02355  \	4	4	5F173	H01S   5/02355	140	ޥȤؤΥ졼åפθΣ	Fixing laser chips on mounts [2021.01]
H01S   5/0236  \	5	5	5F173	H01S   5/0236	530	ޤѤΡΣ	using an adhesive [2021.01]
H01S   5/02365  \	5	5	5F173	H01S   5/02365	13	դˤΡΣ	by clamping [2021.01]
H01S   5/0237  \	5	5	5F173	H01S   5/0237	1815	ϥդˤΡΣ	by soldering [2021.01]
H01S   5/02375  \	4	4	5F173	H01S   5/02375	516	졼åפΰַΣ	Positioning of the laser chips [2021.01]
H01S   5/0238  \	5	5	5F173	H01S   5/0238	265	ޡѤΡΣ	using marks [2021.01]
H01S   5/02385  \	5	5	5F173	H01S   5/02385	81	졼ե󥹤ȤѤΡΣ	using laser light as reference [2021.01]
H01S   5/0239  \	3	3	5F173	H01S   5/0239	7223	ŵŪޤϸŪǻҤȹ礻Σ	Combinations of electrical or optical elements [2021.01]
H01S   5/024  \	2	2	5F173	H01S   5/024	1704	ǮŪʴ򤹤뤿֡Σ	Arrangements for thermal management [2006.01]
H01S   5/026  \	2	2	5F173	H01S   5/026	485	Υꥷå˽Ѥ줿ʣι㡥Ƴȴɡ˥ѥեȥǥƥޤ϶ưǻҡʽϤΰ경ȣӣˡΣ	Monolithically integrated components, e.g. waveguides, monitoring photo-detectors&nbsp;or drivers (stabilisation of output H01S 5/06) [7]
H01S   5/026 610 \	3	3	5F173	H01S   5/026	935	ǻҤȤνѡʣȣߡ	Integration with light emitting element
H01S   5/026 612 \	4	4	5F173	H01S   5/026	1115	ǻҤȤνѡʣȣߡ	Integration with light receiving element
H01S   5/026 616 \	4	4	5F173	H01S   5/026	985	ĴȤνѡʣȣߡ	Integration with optical modulator
H01S   5/026 618 \	4	4	5F173	H01S   5/026	1061	ưƳϩȤνѡʣȣߡ	Integration with passive waveguide
H01S   5/026 650 \	3	3	5F173	H01S   5/026	872	¾ǻҤȤνѡ㡥ưǻҡҡǻҡʣȣߡ	Integration with other element  Example: drive element, heater element
H01S   5/028  \	2	2	5F173	H01S   5/028	701	ƥ󥰡Σ	Coatings [7]
H01S   5/04  \	1	1	5F173	H01S   5/04	127	嵯ˡޤϤ֡㡥ݥԥ󥰡ʣȣӣͥˡΣ	Processes or apparatus for excitation, e.g. pumping (H01S 5/06 takes precedence) [7]
H01S   5/042  \	2	2	5F173	H01S   5/042	2321	ŵŪ嵯Σ	Electrical excitation [7]
H01S   5/042 610 \	3	3	5F173	H01S   5/042	362	¤ʣȣߡ	Detailed structure, e.g. structure of electrodes (added 1999 May)
H01S   5/042 612 \	4	4	5F173	H01S   5/042	3754	Ŷˡʣȣߡ	Electrode
H01S   5/042 614 \	4	4	5F173	H01S   5/042	186	󥿥ءʣȣߡ	Contact layer
H01S   5/042 630 \	3	3	5F173	H01S   5/042	915	ϩѲϩϣ飵ʬˡʣȣߡ	Circuits (controlling circuits are transferred from 5/06 to 5/0687) (added 1999 May)
H01S   5/06  \	1	1	5F173	H01S   5/06	1562	졼ϥѥ᡼桤㡥޼椹뤳ȤˤΡΣ	Arrangements for controlling the laser output parameters, e.g. by operating on the active medium [7]
H01S   5/062  \	2	2	5F173	H01S   5/062	1107	Ŷˤ˰äŰѤ뤳ȤˤΡʣȣӣͥˡΣ	by varying the potential of the electrodes (H01S 5/065 takes precedence) [7]
H01S   5/0625  \	3	3	5F173	H01S   5/0625	157	¿ʬ졼ˤΡΣ	in multi-section lasers [7]
H01S   5/065  \	2	2	5F173	H01S   5/065	315	⡼ɥå󥰡⡼⡼Σ	Mode locking; Mode suppression; Mode selection [7]
H01S   5/065 610 \	3	3	5F173	H01S   5/065	359	ȯ졼ʣȣߡ	Self-pulsating laser
H01S   5/068  \	2	2	5F173	H01S   5/068	2529	졼ϥѥ᡼ΰ경ʣȣӣͥˡΣ	Stabilisation of laser output parameters (H01S 5/0625 takes precedence) [7]
H01S   5/0683  \	3	3	5F173	H01S   5/0683	1416	Ūʽϥѥ᡼˥뤳ȤˤΡΣ	by monitoring the optical output parameters [7]
H01S   5/0687  \	4	4	5F173	H01S   5/0687	861	졼μȿ경ΡΣ	Stabilising the frequency of the laser [7]
H01S   5/10  \	1	1	5F173	H01S   5/10	627	ι¤ޤϷΣ	Construction or shape of the optical resonator [2021.01]
H01S   5/11  \	2	2	5F173	H01S   5/11	653	եȥ˥åХɥå׹¤ޤΡΣ	Comprising a photonic bandgap structure [2021.01]
H01S   5/12  \	2	2	5F173	H01S   5/12	1299	¤ͭ붦㡥ʬ۵Է졼Σģƣ¥졼ϤˤΡʥեȥ˥åХɥå׹¤ޤΣȣӣɽз졼ȣӣˡΣ	the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S 5/11; surface-emitting lasers H01S 5/18) [2021.01]
H01S   5/125  \	3	3	5F173	H01S   5/125	547	ʬȿͷ졼Σģ£ҥ졼ϡΣ	Distributed Bragg reflector lasers (DBR-lasers) [7]
H01S   5/14  \	2	2	5F173	H01S   5/14	1464	﷿졼ʣȣӣͥ表⡼ɥå󥰣ȣӣˡΣ	External cavity lasers (H01S 5/18 takes precedence; mode locking H01S 5/065) [7]
H01S   5/16  \	2	2	5F173	H01S   5/16	480	빽¤졼ʤΰȿ̤Ȥδ֤ۼʤΰĤΡʣȣӣͥˡΣ	Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S 5/14 takes precedence) [7]
H01S   5/18  \	2	2	5F173	H01S   5/18	548	ɽзΣӣšϥ졼㡥ʿȿľξͭΡΣ	Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities [2021.01]
H01S   5/183  \	3	3	5F173	H01S   5/183	3538	ľΤߤͭΡ㡥ľ﷿ȯ졼Σ֣ãӣţ̡ϡΣ	having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] [2006.01]
H01S   5/185  \	3	3	5F173	H01S   5/185	92	ʿΤߤͭΡ㡥ʿ﷿ȯ졼Σȣãӣţ̡ϡʥեȥ˥åХɥå׹¤ޤΣȣӣˡΣ	having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure H01S 5/11) [2021.01]
H01S   5/187  \	4	4	5F173	H01S   5/187	300	֥åȿͤѤΡΣ	using Bragg reflection [2006.01]
H01S   5/20  \	1	1	5F173	H01S   5/20	191	ȾƳΤθƳȤ빽¤ޤϷΣ	Structure or shape of the semiconductor body to guide the optical wave [7]
H01S   5/20 610 \	2	2	5F173	H01S   5/20	270	θĤṽ¤ʣȣߡ	Laminating direction light confining structure
H01S   5/22  \	2	2	5F173	H01S   5/22	1699	åޤϥȥ饤׹¤ͭΡΣ	having a ridge or a stripe structure [7]
H01S   5/22 610 \	3	3	5F173	H01S   5/22	735	ʣΥåޤϥȥ饤׹¤ͭΡ㡥Ʊ쥤ޥӡ෿ʣȣߡ	With multiple ridges or stripes (added 1999 May)
H01S   5/223  \	3	3	5F173	H01S   5/223	671	ߥȥ饤׹¤ΤΡʣȣӣͥˡΣ	Buried stripe structure (H01S 5/227 takes precedence) [7]
H01S   5/227  \	3	3	5F173	H01S   5/227	1026	ߥ᥵¤ΤΡΣ	Buried mesa structure [7]
H01S   5/24  \	2	2	5F173	H01S   5/24	83	¤ͭΡ㡥ֹ·Σ	having a grooved structure, e.g. V-grooved [7]
H01S   5/30  \	1	1	5F173	H01S   5/30	245	ΰι¤ޤϷΰѤΣ	Structure or shape of the active region; Materials used for the active region [7]
H01S   5/32  \	2	2	5F173	H01S   5/32	134	Уܹ礫ʤΡ㡥إƥޤϥ֥إƥ¤ʣȣӣȣӣͥˡΣ	comprising PN junctions, e.g. hetero- or double- hetero-structures (H01S 5/34, H01S 5/36 take precedence) [7]
H01S   5/323  \	3	3	5F173	H01S   5/323	1273	ɢɢɣ¢²ʪˤΡ㡥ǣ졼Σ	in A<sub>III</sub>B<sub>V</sub> compounds, e.g. AlGaAs-laser [7]
H01S   5/323 610 \	4	4	5F173	H01S   5/323	3762	²ǤΤǤΡʣȣߡ	N is used as V-group element
H01S   5/327  \	3	3	5F173	H01S   5/327	169	ɢɣ¢֢²ʪˤΡ㡥ڣãӣ졼Σ	in A<sub>II</sub>B<sub>VI</sub> compounds, e.g. ZnCdSe-laser [7]
H01S   5/34  \	2	2	5F173	H01S   5/34	389	̻ҰͤޤĶʻҹ¤ޤΡ㡥ñ̻ҰͷΣӣѣסϥ졼¿̻ҰͷΣͣѣסϥ졼жΨʬΥĤإƥ¤ΣǣңɣΣӣãȡϥ졼ʣȣӣͥˡΣ	comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S 5/36 takes precedence) [7, 2006.01]
H01S   5/343  \	3	3	5F173	H01S   5/343	2247	ɢɢɣ¢²ʪˤΡ㡥ǣ졼Σ	in A<sub>III</sub>B<sub>V</sub> compounds, e.g. AlGaAs-laser [7]
H01S   5/343 610 \	4	4	5F173	H01S   5/343	3651	²ǤΤǤΡʣȣߡ	N is used as V-group element
H01S   5/347  \	3	3	5F173	H01S   5/347	107	ɢɣ¢֢²ʪˤΡ㡥ڣãӣ졼Σ	in A<sub>II</sub>B<sub>VI</sub> compounds, e.g. ZnCdSe-laser [7]
H01S   5/36  \	2	2	5F173	H01S   5/36	60	ͭʤΡΣ	comprising organic materials [8]
H01S   5/40  \	1	1	5F173	H01S   5/40	1714	ȣӣȣӣʬवʤİʾȾƳΥ졼ʣȣӣͥˡΣ	Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30 (H01S 5/50 takes precedence) [7]
H01S   5/42  \	2	2	5F173	H01S   5/42	680	ɽз졼Σ	Arrays of surface emitting lasers [7]
H01S   5/50  \	1	1	5F173	H01S   5/50	45	ȣӣȣӣʬवʤι¤Σ	Amplifier structures not provided for in groups H01S 5/02-H01S 5/30 [7]
H01S   5/50 610 \	2	2	5F173	H01S   5/50	654	ʣȣߡ	Optical amplifier (added 1999 May)
H01S   5/50 630 \	2	2	5F173	H01S   5/50	314	֤ι¤㡥åե륿ϩĴʸּΤϣǣơˡʣȣߡ	Structure of optical controlling devices, e.g. optical switches, filters, logic circuits, modulators (optical controlling devices per se, G02F) (added 1999 May)
