H03D   1/00  \	0	0	5J072	H03D   1/00	15	Ĵ줿ưĴʣȣģȣģȣģͥ表ǥĴ줿ƥŬĴ㡥󥪥դΥ󥰤Ѥ롤󥰥¦Ӥޤϻα¦Ĵȣ̣	Demodulation of amplitude-modulated oscillations (; amplitude demodulators adapted for digitally modulated carrier systems, e.g. using on-off keying,&nbsp;single sideband or vestigial sideband modulation H04L 27/06)
H03D   1/00  A	0	0	5J072	H03D   1/00	109	ǥ뷿	Digital type
H03D   1/00  Z	0	0	5J072	H03D   1/00	361	¾	Others
H03D   1/02  \	1	1	5J072	H03D   1/02	9		Details
H03D   1/04  \	2	2	5J072	H03D   1/04	85	׿ˤ뺮㸺뤿Ĵѷ	Modifications of demodulators to reduce interference by undesired signals
H03D   1/06  \	2	2	5J072	H03D   1/06	142	Ҥߤ㸺뤿Ĵѷ㡥鵢Ԥˤ	Modifications of demodulators to reduce distortion, e.g. by negative feedback
H03D   1/08  \	1	1	5J072	H03D   1/08	37	üǻҤˤΡʣȣģȣģȣģͥ	by means of non-linear two-pole elements (H03D 1/22, H03D 1/26, H03D 1/28 take precedence)
H03D   1/10  \	2	2	5J072	H03D   1/10	19	ɤˤ	of diodes
H03D   1/10  A	2	0	5J072	H03D   1/10	101	ڥ׷	Operational amplifier type
H03D   1/10  Z	2	0	5J072	H03D   1/10	322	¾	Others
H03D   1/12  \	3	3	5J072	H03D   1/12	1	٤ȣģ٤ȤǤ	with provision for equalising ac and dc loads
H03D   1/14  \	1	1	5J072	H03D   1/14	11	ʾüҤͭǻҤˤΡʣȣģȣģȣģͥ	by means of non-linear elements having more than two poles (H03D 1/22, H03D 1/26, H03D 1/28 take precedence)
H03D   1/16  \	2	2	5J072	H03D   1/16	84	ŻҴɤˤ	of discharge tubes
H03D   1/18  \	2	2	5J072	H03D   1/18	31	ȾƳ֤ˤ	of semiconductor devices
H03D   1/18  A	2	0	5J072	H03D   1/18	299	ȥ󥸥Ѥ	using transistors
H03D   1/18  B	2	0	5J072	H03D   1/18	86	ƣţԤѤ	using FET
H03D   1/18  Z	2	0	5J072	H03D   1/18	3	¾	Others
H03D   1/20  \	2	2	5J072	H03D   1/20	1	׷Ĵͽɤ뤿ΤΡ㡥åɸȲϩˤ륢ΡɸȤͽɤ뤿Τ	with provision for preventing undesired type of demodulation, e.g. preventing anode detection in a grid detection circuit
H03D   1/22  \	1	1	5J072	H03D   1/22	545	ۥϩޤϥ󥯥ϩ	Homodyne or synchrodyne circuits
H03D   1/24  \	2	2	5J072	H03D   1/24	12	Ĥ¦ȤޤȤޤϰް줿ĴΤΤ	for demodulation of signals wherein one sideband or the carrier has been wholly or partially suppressed
H03D   1/24  A	2	0	5J072	H03D   1/24	119	ӣӣ	SSB
H03D   1/24  B	2	0	5J072	H03D   1/24	73	֣ӣ	VSB
H03D   1/24  Z	2	0	5J072	H03D   1/24	56	¾	Others
H03D   1/26  \	1	1	5J072	H03D   1/26	2	ŻԻַŻҴɤˤ	by means of transit-time tubes
H03D   1/28  \	1	1	5J072	H03D   1/28	5	ŻҴŻҥӡиˤΡʣȣģͥ	by deflecting an electron beam in a discharge tube (H03D 1/26 takes precedence)
H03D   3/00  \	0	0	5J072	H03D   3/00	51	Ĵ줿ưĴʣȣģȣģȣģͥ表ǥĴ줿ƥŬĴʤȿեȥ󥰤Ѥȣ̣ǥĴ줿ƥŬĴȣ̣	Demodulation of angle-modulated oscillations (; frequency demodulators adapted for digitally modulated carrier systems, i.e. using frequency shift keying H04L 27/14; phase demodulators adapted for digitally modulated carrier systems, i.e. using phase shift keying H04L 27/22)
H03D   3/00  A	0	0	5J072	H03D   3/00	352	ǥ뷿	Digital type
H03D   3/00  B	0	0	5J072	H03D   3/00	292	󥿷	Counter type
H03D   3/00  C	0	0	5J072	H03D   3/00	106	եݥɥХĥ	Feedback type
H03D   3/00  D	0	0	5J072	H03D   3/00	293	㻨	Low-noise type
H03D   3/00  E	0	0	5J072	H03D   3/00	44	ȿ	Frequency operation type
H03D   3/00  Z	0	0	5J072	H03D   3/00	597	¾	Others
H03D   3/02  \	1	1	5J072	H03D   3/02	542	Ͽ椫줿Ĥο֤ΰ꺹θȤˤΡʣȣģȣģͥ	by detecting phase difference between two signals obtained from input signal ()
H03D   3/04  \	2	2	5J072	H03D   3/04	6	ưΥη׿ޤʬˤ	by counting or integrating cycles of oscillations
H03D   3/06  \	2	2	5J072	H03D   3/06	12	ŪޤĴǤηˤ	by combining signals additively or in product demodulators
H03D   3/06  A	2	0	5J072	H03D   3/06	234	軻	Phase multiplying type
H03D   3/06  B	2	0	5J072	H03D   3/06	233	ɥ䷿	Quadrature type
H03D   3/06  Z	2	0	5J072	H03D   3/06	74	¾	Others
H03D   3/08  \	3	3	5J072	H03D   3/08	74	ɤˤΡ㡥ե쥤̴	by means of diodes, e.g. Foster-Seeley discriminator
H03D   3/10  \	4	4	5J072	H03D   3/10	141	ƥɤƱȾˤƱƳ̤Ρ㡥쥷ȴ	in which the diodes are simultaneously conducting during the same half period of the signal, e.g. ratio detector
H03D   3/12  \	3	3	5J072	H03D   3/12	12	ʾŶˤͭŻҴɤˤ	by means of discharge tubes having more than two electrodes
H03D   3/14  \	3	3	5J072	H03D   3/14	60	ʾŶˤͭȾƳ֤ˤ	by means of semiconductor devices having more than two electrodes
H03D   3/16  \	3	3	5J072	H03D   3/16	183	ŵŪˤ	by means of electromechanical resonators
H03D   3/18  \	2	2	5J072	H03D   3/18	95	Ʊ֤ˤ	by means of synchronous gating arrangements
H03D   3/20  \	3	3	5J072	H03D   3/20	20	ޤϻ³֤꺹˰¸褦ʥѥ륹ȯ	producing pulses whose amplitude or duration depends on the phase difference
H03D   3/22  \	2	2	5J072	H03D   3/22	44	Ĵ٤椫졤ļȿк˴ط꺹ģĤο椬ä룳ʾŶˤͭǽưǻҤˤΡ㡥ոȴ	by means of active elements with more than two electrodes to which two signals are applied derived from the signal to be demodulated and having a phase difference related to the frequency deviation, e.g. phase detector
H03D   3/24  \	2	2	5J072	H03D   3/24	19	Ϣưʣݣȯˤ꿶ưӽޤϽ뤿Ĵѷ	Modifications of demodulators to reject or remove amplitude variations by means of locked-in oscillator circuits
H03D   3/26  \	1	1	5J072	H03D   3/26	183	ƱĴϩޤϥꥢ󥹲ϩηФ뿶ȿˤΡʣȣģȣģͥ	by means of sloping amplitude/frequency characteristic of tuned or reactive circuit (H03D 3/28-H03D 3/32 take precedence)
H03D   3/28  \	1	1	5J072	H03D   3/28	51	Ѳαƶ㸺뤿Ĵѷ	Modifications of demodulators to reduce effect of temperature variations
H03D   3/30  \	1	1	5J072	H03D   3/30	0	ŻԻַŻҴɤˤ	by means of transit-time tubes
H03D   3/32  \	1	1	5J072	H03D   3/32	3	ŻҴŻҥӡиˤΡʣȣģͥ	by deflecting an electron beam in a discharge tube (H03D 3/30 takes precedence)
H03D   3/34  \	1	1	5J072	H03D   3/34	38	ŵǻҤˤΡʣȣģͥˡΣ	by means of electromechanical devices (H03D 3/16 takes precedence) [3]
H03D   5/00  \	0	0	5J072	H03D   5/00	14	Ǥդ˿ĴޤϳĴ줿ưĴ뤿βϩʣȣģȣģͥ表ĴȳĴȤ߹碌ˤäħդ롤ǥĴ줿ƥŬĴ㡥ľĴȣ̣	Circuits for demodulating amplitude-modulated or angle-modulated oscillations at will (; demodulators adapted for digitally modulated carrier systems characterised by combinations of amplitude and angle modulation, e.g. quadrature amplitude modulation H04L 27/38)
H03D   5/00  A	0	0	5J072	H03D   5/00	86	ĴĴξ	for both amplitude modulators and angle modulators
H03D   5/00  Z	0	0	5J072	H03D   5/00	64	¾	Others
H03D   7/00  \	0	0	5J073	H03D   7/00	29	ĤȤ¾ȤؤĴѴ㡥ȿѴʣȣģȣģͥ表ȿѴȤѤ줿Ͷѥȥåȣơ	Transference of modulation from one carrier to another, e.g. frequency-changing (H03D 9/00, H03D 11/00 take precedence; dielectric amplifiers, magnetic amplifiers, parametric amplifiers used as frequency-changers H03F)
H03D   7/00  A	0	0	5J073	H03D   7/00	108	ȯؤΥեݥȥХĥĤ	with feedback to local oscillation
H03D   7/00  B	0	0	5J073	H03D   7/00	139	ǥϩͭ	with digital circuits
H03D   7/00  C	0	0	5J073	H03D   7/00	110	У̣̲ϩͭ	with PLL circuits
H03D   7/00  D	0	0	5J073	H03D   7/00	302	ӡΡʺĴɻ	foe improving S/N ratios (preventing cross modulations)
H03D   7/00  E	0	0	5J073	H03D   7/00	172	ѴΨ夵	for improving conversion efficiencies
H03D   7/00  F	0	0	5J073	H03D   7/00	146	ȯϳɻߤ	for preventing leakage from local oscillation
H03D   7/00  Z	0	0	5J073	H03D   7/00	657	¾Τ	Others
H03D   7/02  \	1	1	5J073	H03D   7/02	7	ɤˤΡʣȣģȣģͥ	by means of diodes (H03D 7/14-H03D 7/22 take precedence)
H03D   7/02  B	1	0	5J073	H03D   7/02	60	󥰷	Ring type
H03D   7/02  Z	1	0	5J073	H03D   7/02	245	¾	Others
H03D   7/04  \	2	2	5J073	H03D   7/04	54	ͭɡ㡥ȥͥɡˤ	having negative resistance characteristic, e.g. tunnel diode
H03D   7/06  \	1	1	5J073	H03D   7/06	56	ʾŶˤͭŻҴɤˤΡʣȣģȣģͥ	by means of discharge tubes having more than two electrodes (H03D 7/14-H03D 7/22 take precedence)
H03D   7/08  \	2	2	5J073	H03D   7/08	0	礵٤椬Ʊ죲Ŷ˴֤˰ä	the signals to be mixed being applied between the same two electrodes
H03D   7/10  \	2	2	5J073	H03D   7/10	3	礵٤椬ۤʤФŶ˴֤˰ä	the signals to be mixed being applied between different pairs of electrodes
H03D   7/12  \	1	1	5J073	H03D   7/12	23	ʾŶˤͭȾƳ֤ˤΡʣȣģȣģͥ	by means of semiconductor devices having more than two electrodes (H03D 7/14-H03D 7/22 take precedence)
H03D   7/12  A	1	0	5J073	H03D   7/12	124	巿	Self-excited type
H03D   7/12  B	1	0	5J073	H03D   7/12	230	¾巿	Separately excited type
H03D   7/12  C	1	0	5J073	H03D   7/12	496	ƣţԤѤ	using FET
H03D   7/12  D	1	0	5J073	H03D   7/12	71	¿ʥȥ󥸥Ѥ	using multi-step transistors
H03D   7/12  Z	1	0	5J073	H03D   7/12	40	¾	Others
H03D   7/14  \	1	1	5J073	H03D   7/14	24	ʿ	Balanced arrangements
H03D   7/14  A	1	0	5J073	H03D   7/14	313	ȥ󥸥Ѥ	using transistors
H03D   7/14  C	1	1	5J073	H03D   7/14	563	֥Х󥹷	Double balanced type
H03D   7/14  B	1	0	5J073	H03D   7/14	207	ݥɤѤ	using diodes
H03D   7/14  D	1	1	5J073	H03D   7/14	145	֥Х󥹷	Double balanced type
H03D   7/14  Z	1	0	5J073	H03D   7/14	56	¾	Others
H03D   7/16  \	1	1	5J073	H03D   7/16	186	¿żȿѴʥѡإƥȣ£	Multiple frequency-changing (superheterodyne receivers H04B 1/26)
H03D   7/18  \	1	1	5J073	H03D   7/18	429	᡼ȿ뤿μȿѴѷ	Modifications of frequency-changers for eliminating image frequencies
H03D   7/20  \	1	1	5J073	H03D   7/20	14	ŻԻַŻҴɤˤ	by means of transit-time tubes
H03D   7/22  \	1	1	5J073	H03D   7/22	1	ŻҴŻҥӡиˤΡʣȣģͥ	by deflecting an electron beam in a discharge tube (H03D 7/20 takes precedence)
H03D   9/00  \	0	0	5J073	H03D   9/00	89	Ĵ줿żȤĴޤѴʸĴ뤿ΡĴĴѴ뤿ΡޤϸμȿѴ뤿ʤޤ֣ǣƣ	Demodulation or transference of modulation of modulated electromagnetic waves (devices or arrangements for demodulating light, transferring the modulation of modulated light or for changing the frequency of light G02F 2/00)
H03D   9/02  \	1	1	5J073	H03D   9/02	114	ʬۥ󥹤ʬۥѥ󥹤ѤĴ㡥ˤ	Demodulation using distributed inductance and capacitance, e.g. in feeder lines
H03D   9/04  \	2	2	5J073	H03D   9/04	73	Ĵ줿ưΤΤ	for angle-modulated oscillations
H03D   9/06  \	1	1	5J073	H03D   9/06	18	ʬۥ󥹤ʬۥѥ󥹤ѤĴѴ	Transference of modulation using distributed inductance and capacitance
H03D   9/06  A	1	0	5J073	H03D   9/06	122	ʿ̲ϩǥݥɤͭ	Plane circuits with diode
H03D   9/06  D	1	1	5J073	H03D   9/06	118	󥰥뷿Τ	of single type
H03D   9/06  F	1	1	5J073	H03D   9/06	159	Х󥹷Τ	of balanced type
H03D   9/06  G	1	2	5J073	H03D   9/06	70	ξʿ̲ϩˤ	of double plane circuits
H03D   9/06  H	1	1	5J073	H03D   9/06	73	֥Х󥹷Τ	of double balanced type
H03D   9/06  K	1	0	5J073	H03D   9/06	94	ʿ̲ϩǥݥɤͭʤ	Plane circuits without diode
H03D   9/06  B	1	0	5J073	H03D   9/06	258	Ωβϩ	3D circuits
H03D   9/06  C	1	0	5J073	H03D   9/06	107	ΩΡʿ̲ϩ	3D or plane circuits
H03D   9/06  Z	1	0	5J073	H03D   9/06	132	¾	Others
H03D  11/00  \	0	0	5J074	H03D  11/00	23	ĶĴϩ	Super-regenerative demodulator circuits
H03D  11/02  \	1	1	5J074	H03D  11/02	64	Ĵ줿ưΤΤ	for amplitude-modulated oscillations
H03D  11/04  \	2	2	5J074	H03D  11/04	23	ʾŶˤͭȾƳ֤ˤ	by means of semiconductor devices having more than two electrodes
H03D  11/06  \	1	1	5J074	H03D  11/06	2	Ĵ줿ưΤΤ	for angle-modulated oscillations
H03D  11/08  \	2	2	5J074	H03D  11/08	1	ʾŶˤͭȾƳ֤ˤ	by means of semiconductor devices having more than two electrodes
H03D  13/00  \	0	0	5J074	H03D  13/00	27	ߤΩʣĤοưΰޤϼȿӤ뤿βϩŰή֤ޤŰ֤ޤή֤ΰѤ¬ꤹ֣ǣң	Circuits for comparing the phase or frequency of two mutually-independent oscillations (arrangements for measuring phase angle between a voltage and a current or between voltages or currents G01R 25/00)
H03D  13/00  A	0	0	5J074	H03D  13/00	398		Comparing phases
H03D  13/00  B	0	0	5J074	H03D  13/00	55	ȿ	Comparing frequencies
H03D  13/00  Z	0	0	5J074	H03D  13/00	12	¾	Others
H03D  99/00  \	0	0	5J074	H03D  99/00	0	Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass [8]
