H10F  10/00  \	0	0	5F251	H10F  10/00	22876	ġθť롤㡥ӡŲ򷿴֡㡥ӡȣǣˡΣ	Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G 9/20)[2025.01]
H10F  10/10  \	1	1	5F251	H10F  10/10	151	Ű̾ɤͭΡΣ	having potential barriers[2025.01]
H10F  10/11  \	2	2	5F251	H10F  10/11	17	ܿŰ̾ɤͭťʣȣƣͥˡΣ	Photovoltaic cells having point contact potential barriers (H10F 10/18 takes precedence)[2025.01]
H10F  10/12  \	2	2	5F251	H10F  10/12	92	°ΡȾƳΡΣͣɣӡϤŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers[2025.01]
H10F  10/13  \	2	2	5F251	H10F  10/13	184	졼ǥåɥХɥåפʤۼؤͭťΣ	Photovoltaic cells having absorbing layers comprising graded bandgaps[2025.01]
H10F  10/14  \	2	2	5F251	H10F  10/14	4874	УΥۥܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PN homojunction potential barriers[2025.01]
H10F  10/142  \	3	3	5F251	H10F  10/142	325	ʣΣУΥۥܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PN homojunctions, e.g. tandem cells[2025.01]
H10F  10/144  \	3	3	5F251	H10F  10/144	475	ɣɣɡݣ²κΤߤʤΡ㡥ǣ󡤣ɣǣޤϣɣиťΣ	comprising only Group III-V?materials, e.g. GaAs,AlGaAs, or?InP photovoltaic cells[2025.01]
H10F  10/16  \	2	2	5F251	H10F  10/16	792	УΥإƥܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PN heterojunction potential barriers[2025.01]
H10F  10/161  \	3	3	5F251	H10F  10/161	189	ʣΣУΥإƥܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PN heterojunctions, e.g. tandem cells[2025.01]
H10F  10/162  \	3	3	5F251	H10F  10/162	569	ɣɡݣ֣²κΤߤʤΡ㡥ãӡãԣťΣ	comprising only Group II-VI?materials, e.g. CdS/CdTe photovoltaic cells[2025.01]
H10F  10/163  \	3	3	5F251	H10F  10/163	302	ɣɣɡݣ²κΤߤʤΡ㡥ǣ󡿣ɣǣޤϣɣСǣɣťΣ	comprising only Group III-V?materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells[2025.01]
H10F  10/164  \	3	3	5F251	H10F  10/164	124	ɣ²κȤΥإƥܹ礫ʤΡ㡥ɣԣϡӣޤϣǣ󡿣ӣǣťΣ	comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells[2025.01]
H10F  10/165  \	4	4	5F251	H10F  10/165	241	إƥܹ礬ɣ֡ݣɣ²إƥܹǤΡ㡥ӣ顿ǣ塤ӣǣ塿ӣޤϣӣ顿ӣøťΣ	the heterojunctions being Group IV-IV?heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells[2025.01]
H10F  10/166  \	5	5	5F251	H10F  10/166	1470	ɣ֡ݣɣ²إƥܹ礬뾽ȥեΥإƥܹǤΡ㡥ꥳإƥܹΣӣȣʡϸťΣ	the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells[2025.01]
H10F  10/167  \	3	3	5F251	H10F  10/167	2126	ɡݣɣɣɡݣ֣²κʤΡ㡥ãӡãӣ売ΣãӡϥإƥܹťΣ	comprising Group I-III-VI?materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells[2025.01]
H10F  10/17  \	2	2	5F251	H10F  10/17	3194	УɣܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PIN junction potential barriers[2025.01]
H10F  10/172  \	3	3	5F251	H10F  10/172	1428	ʣΣУɣܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PIN junctions, e.g. tandem cells[2025.01]
H10F  10/174  \	3	3	5F251	H10F  10/174	1457	ñ뾽ޤ¿뾽ʤΡΣ	comprising monocrystalline or polycrystalline materials[2025.01]
H10F  10/18  \	2	2	5F251	H10F  10/18	293	åȥŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only Schottky potential barriers[2025.01]
H10F  10/19  \	2	2	5F251	H10F  10/19	285	ΰۤʤʣŰ̾ɤͭť롤㡥УܹȣУɣܹξͭ륿ǥॻΣ	Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions[2025.01]
H10F  19/00  \	0	0	5F251	H10F  19/00	6	롼ףȣƣޤ롤ʤȤ⣱Ĥθť롤֤ޤʣ֤ΩΡ㡥ť⥸塼Σ	Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F 10/00, e.g. photovoltaic modules[2025.01]
H10F  19/00  A	0	0	5F251	H10F  19/00	1887	ť⥸塼ޤϣģĤθťΥ쥤	photovoltaic modules or individual arrays of photovoltaic cells
H10F  19/00  Z	0	0	5F251	H10F  19/00	1	¾	Others
H10F  19/10  \	1	1	5F251	H10F  19/10	64	ñȾƳδ˥쥤θťΤǤäơť뤬ľܹޤϣ֥롼ܹͭΡΣ	comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions [2025.01]
H10F  19/20  \	1	1	5F251	H10F  19/20	104	ñȾƳδޤϾ˥쥤θťΤǤäơť뤬ʿܹͭΡƱľѤ줿ʣťͭΣȣƣˡΣ	comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions (having multiple thin-film photovoltaic cells deposited on the same substrate?H10F 19/31)[2025.01]
H10F  19/30  \	1	1	5F251	H10F  19/30	495	ťΡΣ	comprising thin-film photovoltaic cells[2025.01]
H10F  19/31  \	2	2	5F251	H10F  19/31	385	ƱľѤ줿ʣβܤťͭΡΣ	having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate[2025.01]
H10F  19/33  \	3	3	5F251	H10F  19/33	1231	ť³뤿Υѥ˥󥰹㡥ƳؤޤϳؤΥ졼ǡΣ	Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers[2025.01]
H10F  19/35  \	3	3	5F251	H10F  19/35	963	ܤť³뤿ι¤㡥³ޤ凉ڡΣ	Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers[2025.01]
H10F  19/37  \	3	3	5F251	H10F  19/37	195	֤ޤʣ֤ΩΤ̤ƸʬŪƩᤵ뤿μʤΡ㡥ѤʬŪƩť⥸塼Σ	comprising means for obtaining partial light?transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows[2025.01]
H10F  19/40  \	1	1	5F251	H10F  19/40	213	ŪѤ߽Ť֤ͤ줿ťΡΣ	comprising photovoltaic cells in a mechanically stacked configuration[2025.01]
H10F  19/50  \	1	1	5F251	H10F  19/50	11	ʤȤ⣱Ĥθť뤪¾μȾƳΤޤϸιʤ롤֡ʣȣƣͥˡΣ	Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F 19/75 takes precedence)[2025.01]
H10F  19/70  \	1	1	5F251	H10F  19/70	195	ХѥɤΡ³ȢΥХѥɣȣӣˡΣ	comprising bypass diodes (bypass diodes in a junction box H02S 40/34)[2025.01]
H10F  19/75  \	2	2	5F251	H10F  19/75	172	ХѥɤťȽѤޤľܴϢŤƤΡ㡥ƱޤϾ˷ΡΣ	the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate[2025.01]
H10F  19/80  \	1	1	5F251	H10F  19/80	5603	ȤޤƴǤäơťͭ뽸֤ޤʣ֤ΩΤΤΤΡΣ	Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells[2025.01]
H10F  19/85  \	2	2	5F251	H10F  19/85	2342	ݸХåȡΣ	Protective back sheets[2025.01]
H10F  19/90  \	1	1	5F251	H10F  19/90	3257	ť֤³뤿ι¤㡥³ޤ凉ڡñδľť֣ȣƣˡΣ	Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers (between thin-film photovoltaic cells on a single substrate H10F 19/35)[2025.01]
H10F  30/00  \	0	0	5F149	H10F  30/00	8518	ġռȾƳ֤Ǥäơռ֤̤ήή椹Ρ㡥дΣ	Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors[2025.01]
H10F  30/10  \	1	1	5F149	H10F  30/10	2231	Ű̾ɤֳͭĻޤϻ糰ռͤ˴֡㡥եȥ쥸Σ	the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors[2025.01]
H10F  30/20  \	1	1	5F149	H10F  30/20	14491	Ű̾ɤͭ֡㡥եȥȥ󥸥Σ	the devices having potential barriers, e.g. phototransistors[2025.01]
H10F  30/21  \	2	2	5F149	H10F  30/21	409	ֳĻޤϻ糰ռͤ˴֡Σ	the devices being sensitive to infrared, visible or ultraviolet radiation[2025.01]
H10F  30/22  \	3	3	5F149	H10F  30/22	415	ĤΤߤŰ̾ɤͭ֡㡥եȥɡΣ	the devices having only one potential barrier, e.g. photodiodes[2025.01]
H10F  30/221  \	4	4	5F149	H10F  30/221	3068	Ű̾ɤУΥۥܹǤΡΣ	the potential barrier being a PN homojunction[2025.01]
H10F  30/222  \	4	4	5F149	H10F  30/222	675	Ű̾ɤУΥإƥܹǤΡΣ	the potential barrier being a PN heterojunction[2025.01]
H10F  30/223  \	4	4	5F149	H10F  30/223	2504	Ű̾ɤУɣξɤǤΡΣ	the potential barrier being a PIN barrier[2025.01]
H10F  30/225  \	4	4	5F149	H10F  30/225	2595	Ű̾ɤХ󥷥⡼ɤưΡ㡥Х󥷥եȥɡΣ	the potential barrier working in avalanche mode, e.g. avalanche photodiodes[2025.01]
H10F  30/227  \	4	4	5F149	H10F  30/227	902	Ű̾ɤåȥɤǤΡΣ	the potential barrier being a Schottky barrier[2025.01]
H10F  30/24  \	3	3	5F149	H10F  30/24	656	ĤΤߤŰ̾ɤͭ֡㡥Хݡեȥȥ󥸥Σ	the devices having only two potential barriers, e.g. bipolar phototransistors[2025.01]
H10F  30/26  \	3	3	5F149	H10F  30/26	377	İʾŰ̾ɤͭ֡㡥եȥꥹΣ	the devices having three or more potential barriers, e.g. photothyristors[2025.01]
H10F  30/28  \	3	3	5F149	H10F  30/28	737	ų̺ѤħΤ֡㡥ܹ緿ų̥եȥȥ󥸥Σ	the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors[2025.01]
H10F  30/282  \	4	4	5F149	H10F  30/282	216	沈ų̥ȥ󥸥Σɣǣƣţԡϡ㡥ͣɣӣƣţԡζ°ΡȾƳų̥ȥ󥸥ϥեȥȥ󥸥Σ	Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors[2025.01]
H10F  30/29  \	2	2	5F149	H10F  30/29	802	ĶûȤռ㡥ޤγ˴֡Σ	the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation[2025.01]
H10F  30/292  \	3	3	5F149	H10F  30/292	24	Х륯ռд㡥ǣݣ̣УɣΥдΣ	Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors[2025.01]
H10F  30/295  \	3	3	5F149	H10F  30/295	49	ɽ̾ɤޤУܹռд㡥ɽ̾ɥեγҸдΣ	Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors[2025.01]
H10F  30/298  \	3	3	5F149	H10F  30/298	52	ų̺ѤħΤ֡㡥ͣɣӷдΣ	the devices being characterised by field-effect operation, e.g. MIS type detectors[2025.01]
H10F  39/00  \	0	0	4M118	H10F  39/00	0	롼ףȣƣޤ롤ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡ㡥եȥɥ쥤ռдΣ	Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F 30/00, e.g. radiation detectors comprising photodiode arrays[2025.01]
H10F  39/10  \	1	1	4M118	H10F  39/10	386	֡Σ	Integrated devices[2025.01]
H10F  39/10  K	1	0	4M118	H10F  39/10	4955	üѸλǻҡѼǻ	solid-state image sensors [SSIS] for special purposes;light receiving elements for specific purposes
H10F  39/10  J	1	1	4M118	H10F  39/10	436	̿Ѽǻ	light receiving elements for light communications
H10F  39/10  Z	1	0	4M118	H10F  39/10	1383	¾Τ	Others
H10F  39/12  \	2	2	4M118	H10F  39/12	216	λ֡Σ	Image sensors[2025.01]
H10F  39/12  G	2	0	4M118	H10F  39/12	190	ȣƣʳθλ֡㡥ãɣķƣţԷӣɣԷޤϣãУķ	solid-state image sensors [SSIS] provided for in other than H10F39/15,39/18, e.g., CID type,FET type,SIT type orCPD type
H10F  39/12  D	2	0	4M118	H10F  39/12	17461	ѥåե륿åסɽ	packages;filters;chips;surface layers
H10F  39/12  Z	2	0	4M118	H10F  39/12	40	¾Τ	Others
H10F  39/15  \	3	3	4M118	H10F  39/15	2	Ųٷ緿Σããġϸλ֡Σ	Charge-coupled device [CCD] image sensors[2025.01]
H10F  39/15  B	3	0	4M118	H10F  39/15	8269	ããķ㡥ƣɣ̣ãޤϰ켡	CCD type, e.g., FT system, IL system, LA system, CS system, cross gate system or the other systems in one-dimension
H10F  39/15  H	3	1	4M118	H10F  39/15	90	ٱʬΣԣģɡϷ	time delay integration [TDI]type
H10F  39/15  Z	3	0	4M118	H10F  39/15	0	¾Τ	Others
H10F  39/18  \	3	3	4M118	H10F  39/18	3	䷿°ݻȾƳΡΣãͣϣӡϸλ֡եȥɥ쥤λ֡Σ	Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors[2025.01]
H10F  39/18  A	3	0	4M118	H10F  39/18	14365	ץʸλǻҡ㡥ͣϣӷ	planar solid-state image sensors [SSIS] , e.g., MOS type
H10F  39/18  F	3	1	4M118	H10F  39/18	1813	ϥ֥åɸλǻ	hybrid solid-state image sensors [SSIS]
H10F  39/18  E	3	2	4M118	H10F  39/18	2748	Ƴط	photoconductive layer lamination type
H10F  39/18  C	3	0	4M118	H10F  39/18	6045	λǻ	thin film solid-state image sensors [SSIS]
H10F  39/18  Z	3	0	4M118	H10F  39/18	0	¾Τ	Others
H10F  39/90  \	1	1	5F149	H10F  39/90	13	ʣ֤ΩΡΣ	Assemblies of multiple devices[2025.01]
H10F  39/95  \	2	2	4M118	H10F  39/95	398	롼ףȣƣޤ롤ʤȤ⣱Ĥν֤Ρ㡥Ѳ줿λ֤ΡΣ	comprising at least one integrated device covered by group H10F 39/10, e.g. comprising integrated image sensors[2025.01]
H10F  55/00  \	0	0	5F889	H10F  55/00	7986	롼ףȣƣȣƣޤϣȣƣޤռȾƳ֤Ǥäơŵȹ¤Ū˴ϢŵŵŪޤϸŪ˷礵줿ΡΣ	Radiation-sensitive semiconductor devices covered by groups H10F 10/00, H10F 19/00 or H10F 30/00 being structurally associated with electric light sources and electrically or optically coupled thereto[2025.01]
H10F  55/00 500 \	1	1	5F889	H10F  55/00	3109	եȥ󥿥ץ	photo interrupters;light sensors
H10F  55/00 510 \	2	2	5F889	H10F  55/00	1856	ռȾƳ֤ŵȿͷ֤ΤΡ㡥ȿͷ	radiation-sensitive semiconductor devices and devices with electric light sources arranged by facing each other in close vicinity in order to create reflections, e.g., reflection type sensors
H10F  55/00 520 \	2	2	5F889	H10F  55/00	1251	ռȾƳ֤ŵи֤ΤΡ㡥иեȥ󥿥ץ	radiation-sensitive semiconductor devices and devices with electric light sources arranged in asymmetric positions with one of the two on top of the other, e.g., photo interrupters formed by two asymmetric optocouplers with one on top of another
H10F  55/00 530 \	2	2	5F889	H10F  55/00	199	ռȾƳ֤ŵĤζ̴ޤϾ˷줿Ρ㡥Υꥷå	radiation-sensitive semiconductor devices and devices with electric light sources formed on or within the common substrates, e.g., monolithic types
H10F  55/10  \	1	1	5F889	H10F  55/10	393	ռȾƳ֤ŵ椹Ρ㡥Ѵޤ֡Σ	wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices[2025.01]
H10F  55/10 500 \	2	2	5F889	H10F  55/10	571	ݸѴǥХѴǥХ	light-light conversion devices;image conversion devices
H10F  55/15  \	2	2	5F889	H10F  55/15	235	ռ֤ŵ٤ȾƳ֤ǤΡΣ	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices[2025.01]
H10F  55/155  \	3	3	5F889	H10F  55/155	38	Ĥζ̴ޤϾ˷줿ΡΣ	formed in, or on, a common substrate[2025.01]
H10F  55/20  \	1	1	5F889	H10F  55/20	771	ŵռȾƳ֤椹Ρ㡥ץȥץΣ	wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers[2025.01]
H10F  55/25  \	2	2	5F889	H10F  55/25	4629	ռ֤ŵ٤ȾƳ֤ǤΡΣ	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices[2025.01]
H10F  55/25 510 \	3	3	5F889	H10F  55/25	646	ռȾƳ֤ŵȿͷ֤ΤΡ㡥ȿͷץȥץ	radiation-sensitive semiconductor devices and devices with electric light sources arranged by facing each other in close vicinity in order to create reflections, e.g., reflection type optocouplers
H10F  55/25 520 \	3	3	5F889	H10F  55/25	2483	ռȾƳ֤ŵи֤ΤΡ㡥иץȥץ	radiation-sensitive semiconductor devices and devices with electric light sources arranged in asymmetric positions with one of the two on top of the other, e.g., optocouplers formed by two asymmetric optocouplers with one on top of another
H10F  55/255  \	3	3	5F889	H10F  55/255	598	Ĥζ̴ޤϾ˷줿ΡΣ	formed in, or on, a common substrate[2025.01]
H10F  71/00  \	0	0	5F188	H10F  71/00	2804	Υ֥饹ޤ֤¤ޤϽʸťͭ뽸֤ޤʣ֤ΩΤˤ롤ť³뤿Υѥ˥󥰹ȣƣťͭ뽸֤ޤʣ֤ΩΤΤΡȤޤƴ¤ޤϽȣƣռήή椹뾯ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡ¤ޤϽȣƣˡΣ	Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/33;  manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/80;  manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00)[2025.01]
H10F  71/00 100 \	1	1	5F188	H10F  71/00	359	֤¤ޤϽ	manufacturing and treatment of photovoltaic devices
H10F  71/00 120 \	2	2	5F188	H10F  71/00	4913	ѤħΤ	characterized by the technologies of thin film formation
H10F  71/00 122 \	3	3	5F188	H10F  71/00	937	ۤˤ	by spreading on
H10F  71/00 124 \	3	3	5F188	H10F  71/00	860	Ϣ³ˤΡ㡥롦ġ	by continuous processing, e.g., roll-to-roll manufacture
H10F  71/00 140 \	2	2	5F188	H10F  71/00	1650	ɡԥˡħΤ	characterized by the methods for doping
H10F  71/00 160 \	2	2	5F188	H10F  71/00	839	ĤεŪù㡥饤󥰡Ž碌Υ	mechanical working of substrates, e.g., slicing, lamination, stripping
H10F  71/10  \	1	1	5F188	H10F  71/10	4098	֤եȾƳκʤΡΣ	the devices comprising amorphous semiconductor material[2025.01]
H10F  77/00  \	0	0	5F149	H10F  77/00	12447	Υ֥饹ޤ֤ι¤Ūռήή椹뾯ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡι¤ŪȣƣˡΣ	Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00)[2025.01]
H10F  77/10  \	1	1	5F188	H10F  77/10	275	ȾƳΡΣ	Semiconductor bodies[2025.01]
H10F  77/12  \	2	2	5F188	H10F  77/12	1717	Σ	Active materials[2025.01]
H10F  77/121  \	3	3	5F188	H10F  77/121	389	ΤߤޤϥƥΤߤʤΡΣ	comprising only selenium or only tellurium[2025.01]
H10F  77/122  \	3	3	5F188	H10F  77/122	2969	ɣ²κΤߤʤΡΣ	comprising only Group IV materials[2025.01]
H10F  77/1223  \	4	4	5F188	H10F  77/1223	491	ɡѥȤħΤΡΣ	characterised by the dopants[2025.01]
H10F  77/1226  \	4	4	5F188	H10F  77/1226	498	ʣΣɣ²ǤʤΡ㡥ӣáΣ	comprising multiple Group IV elements, e.g. SiC[2025.01]
H10F  77/123  \	3	3	5F188	H10F  77/123	1606	ɣɡݣ֣²κΤߤʤΡ㡥ãӡڣӤޤϣȣãԣΣ	comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe[2025.01]
H10F  77/124  \	3	3	5F188	H10F  77/124	2646	ɣɣɡݣ²κΤߤʤΡ㡥ǣΣ	comprising only Group III-V materials, e.g. GaAs[2025.01]
H10F  77/14  \	2	2	5F188	H10F  77/14	4141	ȾƳΤηȾƳΤȾƳΰηŪ礭ޤΣ	Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies[2025.01]
H10F  77/14 100 \	3	3	5F188	H10F  77/14	459	֤ȾƳΤη֤ȾƳΤȾƳΰηŪ礭ޤ	shapes of the semiconductor bodies of photovoltaic devices; shapes, relative sizes or arrangements of the semiconductor regions within semiconductor bodies of  photo voltaic devices
H10F  77/14 120 \	4	4	5F188	H10F  77/14	199	̻ҹ¤㡥Ķʻҡ¿̻Ұ	quantum structures, e.g., superlattice, multi quantum wells
H10F  77/14 122 \	5	5	5F188	H10F  77/14	317	̻ҥɥå	quantum dots
H10F  77/14 124 \	5	5	5F188	H10F  77/14	158	ʥΥå	nanorods
H10F  77/14 140 \	4	4	5F188	H10F  77/14	435		spherical
H10F  77/16  \	2	2	5F188	H10F  77/16	487	ι¤㡥뾽¤칽¤ޤϷ뾽̡̤Σ	Material structures, e.g. crystalline structures, film structures or crystal plane orientations[2025.01]
H10F  77/162  \	3	3	5F188	H10F  77/162	18	ñ뾽㡥ޤ줿ȾƳγҡʣȣƣͥˡΣ	Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials (H10F 77/169 takes precedence)[2025.01]
H10F  77/164  \	4	4	5F188	H10F  77/164	88	¿뾽ȾƳΡΣ	Polycrystalline semiconductors[2025.01]
H10F  77/166  \	4	4	5F188	H10F  77/166	1995	եȾƳΡΣ	Amorphous semiconductors[2025.01]
H10F  77/169  \	3	3	5F188	H10F  77/169	2283	°ĤޤľȾƳΣ	Thin semiconductor films on metallic or insulating substrates[2025.01]
H10F  77/20  \	1	1	5F188	H10F  77/20	2111	ŶˡΣ	Electrodes[2025.01]
H10F  77/20 100 \	2	2	5F188	H10F  77/20	2841	֤Ŷ	electrodes of photovoltaic devices
H10F  77/20 120 \	3	3	5F188	H10F  77/20	1485	Ŷˤι¤	structures of current collecting electrodes
H10F  77/20 140 \	3	3	5F188	H10F  77/20	1229	Ƴťڡ	conductive pastes
H10F  77/20 160 \	3	3	5F188	H10F  77/20	1603	ƩŶ	transparent electrodes
H10F  77/30  \	1	1	5F188	H10F  77/30	4048	ƥ󥰡γռͤˤťؤ»ɤ֣ȣƣˡΣ	Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F 77/80)[2025.01]
H10F  77/40  \	1	1	5F188	H10F  77/40	8409	ǻҤޤϸ֡ɽ̥ƥȣƣˡΣ	Optical elements or arrangements (surface textures H10F 77/70)[2025.01]
H10F  77/42  \	2	2	5F188	H10F  77/42	1950	ťľܴϢŤޤϽѤ줿Ρ㡥ȿͼʤޤϽʡΣ	directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means[2025.01]
H10F  77/45  \	3	3	5F188	H10F  77/45	740	ĹѴʡ㡥ߥͥåȺָޤϥåץС֤Ѥ뤳ȤˤΡΣ	Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements[2025.01]
H10F  77/48  \	3	3	5F188	H10F  77/48	1003	ȿʹΣ£ӣҡϡΣ	Back surface reflectors [BSR][2025.01]
H10F  77/50  \	1	1	5F188	H10F  77/50	8035	Ȥޤƴʸť⥸塼ΤΤΣȣƣˡΣ	Encapsulations or containers (for photovoltaic modules H10F 19/80)[2025.01]
H10F  77/60  \	1	1	5F188	H10F  77/60	384	ѡǮޤϲưΤ֡Σ	Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations[2025.01]
H10F  77/63  \	2	2	5F188	H10F  77/63	295	ťľܴϢŤޤϽѤ줿֡㡥ťľܴϢŤ줿ҡȥǽưѤΤ˽Ѥ줿ڥǻҡΣ	Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling[2025.01]
H10F  77/67  \	3	3	5F188	H10F  77/67	113	ťľܴϢŤǮͥ륮Ѥ뤿μʤޤΡ㡥Ѥ줿٥åǻҡΣ	including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements[2025.01]
H10F  77/70  \	1	1	5F188	H10F  77/70	358	ɽ̥ƥ㡤㡥ԥߥåɹ¤Σ	Surface textures, e.g. pyramid structures[2025.01]
H10F  77/70 100 \	2	2	5F188	H10F  77/70	1214	֤ɽ̥ƥ	surface texture of photovoltaic devices
H10F  77/70 120 \	3	3	5F188	H10F  77/70	822	Ӥɽ̥ƥ	surface texture of thin film solar cells
H10F  77/80  \	1	1	5F188	H10F  77/80	52	γռͤˤťؤ»ɻߤ뤿֡㡥ѤΤΣ	Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications[2025.01]
H10F  77/90  \	1	1	5F188	H10F  77/90	166	ťľܴϢŤޤϽѤ줿ͥ륮Ѽʡ㡥ťȽѤ줿ǥ󥵡Σ	Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells[2025.01]
H10F  99/00  \	0	0	5F149	H10F  99/00	671	Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass[2025.01]
H10F  99/00 100 \	1	1	5F251	H10F  99/00	4	ȣƣݣʬवʤ	electric generators which are not provided for in H10F10/00-19/90
