H10H  20/00  \	0	0	5F241	H10H  20/00	1087	Ű̾ɤͭġ̵ȯȾƳ֡㡥ȯɡΣ̣ţġϡΣ	Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED][2025.01]
H10H  20/00  H	0	0	5F142	H10H  20/00	3936	ʤμ	attachment of finished products
H10H  20/00  J	0	0	5F241	H10H  20/00	6977	ưϩ	drive circuits
H10H  20/00  K	0	0	5F241	H10H  20/00	854	¬	tests, measurements
H10H  20/00  L	0	0	5F142	H10H  20/00	5552	֡ȯ֤Ѥʡ	applied devices (finished products using light emitting devices)
H10H  20/00  Z	0	0	5F241	H10H  20/00	411	¾Τ	Others
H10H  20/01  \	1	1	5F241	H10H  20/01	4	¤ޤϽΣ	Manufacture or treatment[2025.01]
H10H  20/01  A	1	0	5F142	H10H  20/01	19512	ѥå˴ؤ	in relation to packages
H10H  20/01  Z	1	0	5F241	H10H  20/01	22753	¾Τ	Others
H10H  20/80  \	1	1	5F241	H10H  20/80	1	¤ŪΣ	Constructional details[2025.01]
H10H  20/81  \	2	2	5F241	H10H  20/81	1033	ΡΣ	Bodies[2025.01]
H10H  20/811  \	3	3	5F241	H10H  20/811	552	̻Ҹ̤դ빽¤ޤĶʻҤͭΡ㡥ȥܹͥΣ	having quantum effect structures or superlattices, e.g. tunnel junctions[2025.01]
H10H  20/812  \	4	4	5F241	H10H  20/812	6095	ȯΰˤΡ㡥̻Ĥṽ¤ͭΡΣ	within the light-emitting regions, e.g. having quantum confinement structures[2025.01]
H10H  20/813  \	3	3	5F241	H10H  20/813	4371	ʣȯΰͭΡ㡥¿ܹ̣ţĤޤΤ˥եȥߥͥΰͭȯ֡Σ	having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies[2025.01]
H10H  20/814  \	3	3	5F241	H10H  20/814	3358	ȿͼʤͭΡ㡥ȾƳΥ֥åȿͶΣ	having reflecting means, e.g. semiconductor Bragg reflectors[2025.01]
H10H  20/815  \	3	3	5F241	H10H  20/815	3180	ϴ¹¤ͭΡ㡥ХåեءΣ	having stress relaxation structures, e.g. buffer layers[2025.01]
H10H  20/816  \	3	3	5F241	H10H  20/816	4066	ή湽¤ͭΡ㡥ǻ٥ɡȾƳءή֥å¤Σ	having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures[2025.01]
H10H  20/817  \	3	3	5F241	H10H  20/817	2571	뾽¤ޤϷ뾽̤ħΤΡ㡥¿뾽եޤϥݡ饹Σ	characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous[2025.01]
H10H  20/818  \	4	4	5F241	H10H  20/818	108	ȯΰˤΡΣ	within the light-emitting regions[2025.01]
H10H  20/819  \	3	3	5F241	H10H  20/819	2516	ηħΤΡ㡥Ѷʤޤ̼ꤵ줿ġΣ	characterised by their shape, e.g. curved or truncated substrates[2025.01]
H10H  20/82  \	4	4	5F241	H10H  20/82	2489	̲줿ɽ̡㡥ԥؤγ̤ˤΡΣ	Roughened surfaces, e.g. at the interface between epitaxial layers[2025.01]
H10H  20/821  \	4	4	5F241	H10H  20/821	908	ȯΰˤΡ㡥ץ졼ʡܹΣ	of the light-emitting regions, e.g. non-planar junctions[2025.01]
H10H  20/822  \	3	3	5F241	H10H  20/822	874	ȯΰκΣ	Materials of the light-emitting regions[2025.01]
H10H  20/823  \	4	4	5F241	H10H  20/823	2462	ɣɡݣ֣²κΤߤʤΡ㡥ڣϡΣ	comprising only Group II-VI materials, e.g. ZnO [2025.01]
H10H  20/824  \	4	4	5F241	H10H  20/824	11206	ɣɣɡݣ²κΤߤʤΡ㡥ǣСΣ	comprising only Group III-V materials, e.g. GaP[2025.01]
H10H  20/825  \	5	5	5F241	H10H  20/825	14361	ǤޤΡ㡥ǣΡΣ	containing nitrogen, e.g. GaN[2025.01]
H10H  20/826  \	4	4	5F241	H10H  20/826	2677	ɣ²κΤߤʤΡΣ	comprising only Group IV materials [2025.01]
H10H  20/83  \	2	2	5F241	H10H  20/83	1913	ŶˡΣ	Electrodes[2025.01]
H10H  20/831  \	3	3	5F241	H10H  20/831	3737	ηħΤΡΣ	characterised by their shape[2025.01]
H10H  20/832  \	3	3	5F241	H10H  20/832	5378	κħΤΡΣ	characterised by their material[2025.01]
H10H  20/833  \	4	4	5F241	H10H  20/833	2813	ƩΣ	Transparent materials[2025.01]
H10H  20/84  \	2	2	5F241	H10H  20/84	2743	ƥ󥰡㡥ѥå١ؤޤȿɻߥƥ󥰡Σ	Coatings, e.g. passivation layers or antireflective coatings[2025.01]
H10H  20/841  \	3	3	5F241	H10H  20/841	832	ȿͥƥ󥰡㡥ͶΥ֥åȿͶΣ	Reflective coatings, e.g. dielectric Bragg reflectors[2025.01]
H10H  20/85  \	2	2	5F142	H10H  20/85	5308	ѥåΣ	Packages[2025.01]
H10H  20/851  \	3	3	5F142	H10H  20/851	13138	ĹѴʡΣ	Wavelength conversion means[2025.01]
H10H  20/852  \	3	3	5F142	H10H  20/852	2186	ȡΣ	Encapsulations[2025.01]
H10H  20/853  \	4	4	5F142	H10H  20/853	5918	ηħΤΡΣ	characterised by their shape[2025.01]
H10H  20/854  \	4	4	5F142	H10H  20/854	11536	κħΤΡ㡥ݥޤϥꥳΣ	characterised by their material, e.g. epoxy or silicone resins[2025.01]
H10H  20/855  \	3	3	5F142	H10H  20/855	8086	ηʡ㡥󥺡Σ	Optical field-shaping means, e.g. lenses[2025.01]
H10H  20/856  \	4	4	5F142	H10H  20/856	12097	ȿͼʡΣ	Reflecting means[2025.01]
H10H  20/857  \	3	3	5F142	H10H  20/857	18835	³㡥꡼ɥե졼ࡤܥɥ磻䡼ޤϥܡΣ	Interconnections, e.g. lead-frames, bond wires or solder balls[2025.01]
H10H  20/858  \	3	3	5F142	H10H  20/858	5141	ǮޤѤΤμʡΣ	Means for heat extraction or cooling[2025.01]
H10H  29/00  \	0	0	5F197	H10H  29/00	724	롼ףȣȣޤ롤ʤȤ⣱ĤȯȾƳǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H 20/00[2025.01]
H10H  29/01  \	1	1	5F197	H10H  29/01	3440	¤ޤϽΣ	Manufacture or treatment[2025.01]
H10H  29/02  \	2	2	5F197	H10H  29/02	2720	ԥåɥץ졼ѤΡΣ	using pick-and-place processes[2025.01]
H10H  29/03  \	2	2	5F197	H10H  29/03	2737	̣ţĤΥޥȥ󥹥եѤΡ㡥վʪѤΡΣ	using mass transfer of LEDs, e.g. by using liquid suspensions[2025.01]
H10H  29/10  \	1	1	5F197	H10H  29/10	3466	롼ףȣȣޤ롤ʤȤ⣱ĤȯȾƳιʤ롤֡ʥƥ֥ޥȥꥯ̣ţĥǥץ쥤ȣȣˡΣ	Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H 20/00 (active-matrix LED displays H10H 29/30)[2025.01]
H10H  29/14  \	2	2	5F197	H10H  29/14	4599	ʣȯȾƳιʤΡΣ	comprising multiple light-emitting semiconductor components[2025.01]
H10H  29/20  \	1	1	5F197	H10H  29/20	336	롼ףȣȣޤ롤ʤȤ⣱ĤȯȾƳ֤롤ʣ֤ΩΡʥƥ֥ޥȥꥯ̣ţĥǥץ쥤ȣȣˡΣ	Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H 20/00 (active-matrix LED displays H10H 29/30)[2025.01]
H10H  29/24  \	2	2	5F197	H10H  29/24	25114	ʣȯȾƳ֤ΡΣ	comprising multiple light-emitting semiconductor devices[2025.01]
H10H  29/30  \	1	1	5F197	H10H  29/30	1395	ƥ֥ޥȥꥯ̣ţĥǥץ쥤Σ	Active-matrix LED displays [2025.01]
H10H  29/32  \	2	2	5F197	H10H  29/32	24	ǤǻҤδŪޤ֤ħΤΡ㡥ңǣǤΥȥ󥸥֡Σ	characterised by the geometry or arrangement of elements within a subpixel, e.g. arrangement of the transistor within its RGB subpixel[2025.01]
H10H  29/34  \	2	2	5F197	H10H  29/34	97	ǤǤδŪޤ֤ħΤΡ㡥ңǣǤŪ֡Σ	characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels[2025.01]
H10H  29/37  \	2	2	5F197	H10H  29/37	157	Ǥ뤿ι¤㡥̣ţĴ֤γɡΣ	Pixel-defining structures, e.g. banks between the LEDs[2025.01]
H10H  29/39  \	2	2	5F197	H10H  29/39	803	ưȥ󥸥ؤβŶˤ³Σ	Connection of the pixel electrodes to the driving transistors [2025.01]
H10H  29/41  \	2	2	5F197	H10H  29/41	169	ưȥ󥸥ȣ̣ţĴ֤˷ءΣ	Insulating layers formed between the driving transistors and the LEDs[2025.01]
H10H  29/45  \	2	2	5F197	H10H  29/45	155	줾˥ƥǻҤͭ룲ĤδĤʤΡ㡥ۤʤľ¸ߤ̣ţĥ쥤ȶưϩʤǥץ쥤Σ	comprising two substrates, each having active devices thereon, e.g. displays comprising LED arrays and driving circuitry on different substrates[2025.01]
H10H  29/49  \	2	2	5F197	H10H  29/49	202	³㡥ޤüҡʶưȥ󥸥ؤβŶˤ³ȣȣˡΣ	Interconnections, e.g. wiring lines or terminals (connection of the pixel electrodes to the driving transistors H10H 29/39)[2025.01]
H10H  29/80  \	1	1	5F197	H10H  29/80	204	¤ŪΣ	Constructional details [2025.01]
H10H  29/85  \	2	2	5F197	H10H  29/85	43	ѥåΣ	Packages[2025.01]
H10H  29/851  \	3	3	5F197	H10H  29/851	130	ĹѴʡΣ	Wavelength conversion means[2025.01]
H10H  29/852  \	3	3	5F197	H10H  29/852	42	ȡΣ	Encapsulations[2025.01]
H10H  29/853  \	4	4	5F197	H10H  29/853	57	ηħΤΡΣ	characterised by their shape[2025.01]
H10H  29/854  \	4	4	5F197	H10H  29/854	75	κħΤΡ㡥ݥޤϥꥳΣ	characterised by their material, e.g. epoxy or silicone resins[2025.01]
H10H  29/855  \	3	3	5F197	H10H  29/855	206	ηʡ㡥󥺡Σ	Optical field-shaping means, e.g. lenses[2025.01]
H10H  29/856  \	4	4	5F197	H10H  29/856	117	ȿͼʡΣ	Reflecting means[2025.01]
H10H  99/00  \	0	0	5F197	H10H  99/00	0	Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass[2025.01]
