H10N  10/00  \	0	0	5F091	H10N  10/00	73	ۼܹ礫ʤǮ֡ʤ٥å̤ޤϥڥ̤򼨤֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N  10/00  S	0	0	5F091	H10N  10/00	310	ȾƳǻҤޤϴå	Temperature-sensitive semiconductor elements or switches
H10N  10/00  Z	0	0	5F091	H10N  10/00	359	¾Τ	Others
H10N  10/01  \	1	1	5F091	H10N  10/01	3406	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  10/10  \	1	1	5F091	H10N  10/10	71	٥å̤ޤϥڥ̤ΤߤưΡΣ	operating with only the Peltier or Seebeck effects [2023.01]
H10N  10/10  C	1	0	5F091	H10N  10/10	447	ϩħڥޤϥ٥å	Peltier devices or Seebeck devices characterized by their circuits
H10N  10/10  Z	1	0	5F091	H10N  10/10	616	¾Τ	Others
H10N  10/13  \	2	2	5F091	H10N  10/13	2528	ܹǮ򴹼ʤħΤΡΣ	characterised by the heat-exchanging means at the junction [2023.01]
H10N  10/17  \	2	2	5F091	H10N  10/17	200	֤륻ޤǮФι¤ޤħΤΡΣ	characterised by the structure or configuration of the cell or thermocouple forming the device [2023.01]
H10N  10/17  A	2	0	5F091	H10N  10/17	3368	ǮФι¤ޤ㡥ѥ	Structures or arrangements of thermocouples, e.g., thermopiles
H10N  10/17  Z	2	0	5F091	H10N  10/17	1044	¾ΤΡ㡥⥸塼ޤȯ	Others, e.g., thermomodules or for power generation
H10N  10/80  \	1	1	5F091	H10N  10/80	198	¤ŪΣ	Constructional details [2023.01]
H10N  10/81  \	2	2	5F091	H10N  10/81	49	ܹι¤ŪΣ	Structural details of the junction [2023.01]
H10N  10/813  \	3	3	5F091	H10N  10/813	102	ʬΥǤܹ㡥ФͤѤΡΣ	the junction being separable, e.g. using a spring [2023.01]
H10N  10/817  \	3	3	5F091	H10N  10/817	933	ʬΥǤʤܹ㡥ܹ礵줿ΡƷ뤵줿ΤޤϤϤդ줿ΡΣ	the junction being non- separable, e.g. being cemented, sintered or soldered [2023.01]
H10N  10/82  \	2	2	5F091	H10N  10/82	212	³Σ	Interconnections
H10N  10/85  \	2	2	5F091	H10N  10/85	3	ǮγΣ	Thermoelectric active materials [2023.01]
H10N  10/851  \	3	3	5F091	H10N  10/851	1249	̵ʪʤΡΣ	comprising inorganic compositions [2023.01]
H10N  10/852  \	4	4	5F091	H10N  10/852	1428	ƥ롤ޤβʤΡΣ	comprising tellurium, selenium or sulfur [2023.01]
H10N  10/853  \	4	4	5F091	H10N  10/853	500	ǡޤϥӥޥʤΡʣȣΣͥˡΣ	comprising arsenic, antimony or bismuth (H10N 10/852 takes precedence) [2023.01]
H10N  10/854  \	4	4	5F091	H10N  10/854	361	°ΤߤʤΡʣȣΣȣΣͥˡΣ	comprising only metals (H10N 10/852, H10N 10/853 take precedence) [2023.01]
H10N  10/855  \	4	4	5F091	H10N  10/855	1112	ۥǡúǡǤޤǤͭ벽ʪʤΡΣ	comprising compounds containing boron, carbon, oxygen or nitrogen [2023.01]
H10N  10/856  \	3	3	5F091	H10N  10/856	437	ͭʪʤΡΣ	comprising organic compositions [2023.01]
H10N  10/857  \	3	3	5F091	H10N  10/857	773	Ϣ³ŪˤޤϢ³ŪѲʪʤΡΣ	comprising compositions changing continuously or discontinuously inside the material [2023.01]
H10N  15/00  \	0	0	5F091	H10N  15/00	926	ۼܹͭʤǮ֡Ǯ֡㡥ͥ󥹥ȡݥå󥰥ϥ̤ѤΡʽ֤ޤʣ֤ΩΣȣΣˡΣ	Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N  15/10  \	1	1	5F091	H10N  15/10	872	ͶΨβѲѤǮ֡㡥꡼٤ξ岼ǺưΡΣ	Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point [2023.01]
H10N  15/20  \	1	1	5F091	H10N  15/20	152	ƩΨβѲѤǮ֡㡥꡼٤ξ岼ǺưΡΣ	Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point [2023.01]
H10N  19/00  \	0	0	5F091	H10N  19/00	66	롼ףȣΣȣΣޤ롤ʤȤ⣱ĤǮǻҤޤǮǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00-H10N 15/00 [2023.01]
H10N  30/00  \	0	0	5F050	H10N  30/00	4978	֤ޤ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N  30/01  \	1	1	5F050	H10N  30/01	10072	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  30/02  \	2	2	5F050	H10N  30/02	1372	ʤޤϥηΣ	Forming enclosures or casings [2023.01]
H10N  30/03  \	2	2	5F050	H10N  30/03	86	ʤޤʬޤ֤ȤΩơΣ	Assembling devices that include piezoelectric or electrostrictive parts [2023.01]
H10N  30/04  \	2	2	5F050	H10N  30/04	632	ޤ㡥ʬˤħưħޤϥ⡼ƱĴΣ	Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning [2023.01]
H10N  30/045  \	3	3	5F050	H10N  30/045	1345	ʬˡˤΣ	by polarising [2023.01]
H10N  30/05  \	2	2	5F050	H10N  30/05	412	¿ذ֤ޤ֡ޤϤʤ¤㡥ΤŶˤؤˤΡΣ	Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes [2023.01]
H10N  30/053  \	3	3	5F050	H10N  30/053	445	ΤޤΤŶˤƱƷˤΣ	by integrally sintering piezoelectric or electrostrictive bodies and electrodes [2023.01]
H10N  30/057  \	3	3	5F050	H10N  30/057	45	Х륯ΤޤΤŶˤؤˤΣ	by stacking bulk piezoelectric or electrostrictive bodies and electrodes [2023.01]
H10N  30/06  \	2	2	5F050	H10N  30/06	2777	Ŷˤޤ³㡥꡼ɤޤüҡηΣ	Forming electrodes or interconnections, e.g. leads or terminals [2023.01]
H10N  30/063  \	3	3	5F050	H10N  30/063	586	³㡥ط֤ޤط֤³ŶˡηΣ	Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts [2023.01]
H10N  30/067  \	3	3	5F050	H10N  30/067	618	ط֤ޤط֤ñŶˤηΣ	Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts [2023.01]
H10N  30/07  \	2	2	5F050	H10N  30/07	109	ŵǻҤޤ¾δؤΡʤޤʡޤϤΤηΣ	Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base [2023.01]
H10N  30/071  \	3	3	5F050	H10N  30/071	474	̴ľؤΡʤޤʤȡȾƳǻҤޤ¾βϩǻҤȤμդΣ	Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate [2023.01]
H10N  30/072  \	3	3	5F050	H10N  30/072	380	ΤޤΤؤޤˤΣ	by laminating or bonding of piezoelectric or electrostrictive bodies [2023.01]
H10N  30/073  \	4	4	5F050	H10N  30/073	1029	°ͻޤޤˤΣ	by fusion of metals or by adhesives [2023.01]
H10N  30/074  \	3	3	5F050	H10N  30/074	451	ؤޤؤѤˤ롤㡥ޤϥ꡼Σ	by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing [2023.01]
H10N  30/076  \	4	4	5F050	H10N  30/076	1008	ѤˤΣ	by vapour phase deposition [2023.01]
H10N  30/077  \	4	4	5F050	H10N  30/077	526	ѤˤΣ	by liquid phase deposition [2023.01]
H10N  30/078  \	5	5	5F050	H10N  30/078	652	륲ѤˤΣ	by sol-gel deposition [2023.01]
H10N  30/079  \	4	4	5F050	H10N  30/079	888	Ѥˡ㡥ĹΣ	using intermediate layers, e.g. for growth control [2023.01]
H10N  30/08  \	2	2	5F050	H10N  30/08	95	ΤޤΤޤϵùΣ	Shaping or machining of piezoelectric or electrostrictive bodies [2023.01]
H10N  30/081  \	3	3	5F050	H10N  30/081	169	ޥѤۤޤѤˤ롤㡥եȥաΣ	by coating or depositing using masks, e.g. liftoff [2023.01]
H10N  30/082  \	3	3	5F050	H10N  30/082	1121	å󥰤ˤ롤㡥꥽եΣ	by etching, e.g. lithography [2023.01]
H10N  30/084  \	3	3	5F050	H10N  30/084	468	ޤϲˤΣ	by moulding or extrusion [2023.01]
H10N  30/085  \	3	3	5F050	H10N  30/085	184	ùˤΣ	by machining [2023.01]
H10N  30/086  \	4	4	5F050	H10N  30/086	429	ޤϸˤΣ	by polishing or grinding [2023.01]
H10N  30/088  \	4	4	5F050	H10N  30/088	685	ںޤϥ󥰤ˤΣ	by cutting or dicing [2023.01]
H10N  30/089  \	4	4	5F050	H10N  30/089	172	ѥ󥰤ˤΣ	by punching [2023.01]
H10N  30/09  \	2	2	5F050	H10N  30/09	9	źޤĺηΣ	Forming piezoelectric or electrostrictive materials [2023.01]
H10N  30/092  \	3	3	5F050	H10N  30/092	258	ʣηΣ	Forming composite materials [2023.01]
H10N  30/093  \	3	3	5F050	H10N  30/093	1052	̵ηΣ	Forming inorganic materials [2023.01]
H10N  30/095  \	4	4	5F050	H10N  30/095	124	ͻˤΣ	by melting [2023.01]
H10N  30/097  \	4	4	5F050	H10N  30/097	1623	ˤΣ	by sintering [2023.01]
H10N  30/098  \	3	3	5F050	H10N  30/098	474	ͭηΣ	Forming organic materials [2023.01]
H10N  30/20  \	1	1	5F050	H10N  30/20	15302	ŵŪϤӵŪϤͭΡ㡥奨ޤϿưҤȤƵǽΡΣ	with electrical input and mechanical output, e.g. functioning as actuators or vibrators [2023.01]
H10N  30/30  \	1	1	5F050	H10N  30/30	3799	ŪϤŵŪϤͭΡ㡥ȯŵޤϥ󥵤ȤƵǽΡΣ	with mechanical input and electrical output, e.g. functioning as generators or sensors [2023.01]
H10N  30/40  \	1	1	5F050	H10N  30/40	1744	ŵŪϤŵŪϤͭΡ㡥ѰȤƵǽΡΣ	with electrical input and electrical output, e.g. functioning as transformers [2023.01]
H10N  30/50  \	1	1	5F050	H10N  30/50	4865	ع¤ޤ¿ع¤ͭΡΣ	having a stacked or multilayer structure [2023.01]
H10N  30/60  \	1	1	5F050	H10N  30/60	114	Ʊ֥ι¤ͭΡΣ	having a coaxial cable structure [2023.01]
H10N  30/80  \	1	1	5F050	H10N  30/80	665	¤ŪΣ	Constructional details [2023.01]
H10N  30/85  \	2	2	5F050	H10N  30/85	12080	ޤγΣ	Piezoelectric or electrostrictive active materials [2023.01]
H10N  30/853  \	3	3	5F050	H10N  30/853	9339	ߥåʪΣ	Ceramic compositions [2023.01]
H10N  30/857  \	3	3	5F050	H10N  30/857	1715	ʬʪΣ	Macromolecular compositions [2023.01
H10N  30/87  \	2	2	5F050	H10N  30/87	2106	Ŷˤޤ³㡥꡼ɤޤüҡΣ	Electrodes or interconnections, e.g. leads or terminals [2023.01]
H10N  30/88  \	2	2	5F050	H10N  30/88	1155	ն񡨻ٻʤΣ	Mounts; Supports; Enclosures; Casings [2023.01]
H10N  35/00  \	0	0	5F050	H10N  35/00	790	֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N  35/01  \	1	1	5F050	H10N  35/01	170	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  35/80  \	1	1	5F050	H10N  35/80	96	¤ŪΣ	Constructional details [2023.01]
H10N  35/85  \	2	2	5F050	H10N  35/85	422	γΣ	Magnetostrictive active materials [2023.01]
H10N  39/00  \	0	0	5F050	H10N  39/00	58	롼ףȣΣȣΣޤ롤ʤȤ⣱ĤΰǻҡǻҤޤϼǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00-H10N 35/00 [2023.01]
H10N  50/00  \	0	0	5F092	H10N  50/00	638	ή֡ʥ֣ۡȣΣ֤ޤʣ֤ΩΣȣΣˡΣ	Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N  50/01  \	1	1	5F092	H10N  50/01	2500	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  50/10  \	1	1	5F092	H10N  50/10	111	ǻҡΣ	Magnetoresistive devices [2023.01]
H10N  50/10  A	1	0	5F092	H10N  50/10	406	ϩħ	Characterized by the circuits
H10N  50/10  S	1	0	5F092	H10N  50/10	361	ȾƳμǻ	Semiconductor magnetoresistive elements
H10N  50/10  M	1	0	5F092	H10N  50/10	1149		Ferromagnetic bodies
H10N  50/10  P	1	0	5F092	H10N  50/10	572	ѥ	Magnetosensitive part patterns
H10N  50/10  B	1	0	5F092	H10N  50/10	574	Х	Bias magnetic fields
H10N  50/10  U	1	0	5F092	H10N  50/10	718		Use
H10N  50/10  Z	1	0	5F092	H10N  50/10	3121	¾Τ	Others
H10N  50/20  \	1	1	5F092	H10N  50/20	6361	ԥжή֡ʼǻңȣΣˡΣ	Spin-polarised current-controlled devices (magnetoresistive devices H10N 50/10) [2023.01]
H10N  50/80  \	1	1	5F092	H10N  50/80	81	¤ŪΣ	Constructional details [2023.01]
H10N  50/80  D	1	0	5F092	H10N  50/80	301	Ŷ	Electrodes
H10N  50/80  H	1	0	5F092	H10N  50/80	241	ݸ	Protective layers
H10N  50/80  P	1	0	5F092	H10N  50/80	169	ưħΡ㡥ݥƥ󥷥᡼	Characterized by the movable members, e.g., potentiometers
H10N  50/80  Z	1	0	5F092	H10N  50/80	930	¾Τ	Others
H10N  50/85  \	2	2	5F092	H10N  50/85	2308	ΰκΣ	Materials of the active region
H10N  52/00  \	0	0	5F092	H10N  52/00	46	ۡ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N  52/00  A	0	0	5F092	H10N  52/00	469	ϩħ	Characterized by the circuits
H10N  52/00  C	0	0	5F092	H10N  52/00	21	Υ	Solid inductors
H10N  52/00  S	0	0	5F092	H10N  52/00	421	ȾƳ	Semiconductors
H10N  52/00  M	0	0	5F092	H10N  52/00	41		Ferromagnetic bodies
H10N  52/00  P	0	0	5F092	H10N  52/00	118	ѥ	Magnetosensitive part patterns
H10N  52/00  B	0	0	5F092	H10N  52/00	23	Х	Bias magnetic fields
H10N  52/00  U	0	0	5F092	H10N  52/00	106		Use
H10N  52/00  Z	0	0	5F092	H10N  52/00	885	¾Τ	Others
H10N  52/01  \	1	1	5F092	H10N  52/01	256	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  52/80  \	1	1	5F092	H10N  52/80	6	¤ŪΣ	Constructional details [2023.01]
H10N  52/80  D	1	0	5F092	H10N  52/80	100	Ŷ	Electrodes
H10N  52/80  H	1	0	5F092	H10N  52/80	35	ݸ	Protective layers
H10N  52/80  Z	1	0	5F092	H10N  52/80	484	¾Τ	Others
H10N  52/85  \	2	2	5F092	H10N  52/85	464	ΰκΣ	Materials of the active region
H10N  59/00  \	0	0	5F092	H10N  59/00	272	롼ףȣΣȣΣޤ롤ʤȤ⣱ĤήǻҤޤϥۡǻҤ롤֤ޤʣ֤ΩΡʼ񹳥ॢΣͣң֣͡ȣ£ˡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00-H10N 52/00 (MRAM devices H10B 61/00) [2023.01]
H10N  60/00  \	0	0	4M113	H10N  60/00	480	ĶƳ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01]
H10N  60/00  A	0	0	4M113	H10N  60/00	238	ĶƳѤ	Devices by making use of the superconductive properties
H10N  60/00  G	0	1	4M113	H10N  60/00	176	Ѥ	Devices by making use of the magnetic properties
H10N  60/00  M	0	1	4M113	H10N  60/00	45	ޥʡ̤Ѥ	Devices by making use of Meissner effect
H10N  60/00  C	0	0	4M113	H10N  60/00	174	ĶƳΤ³	Connecting superconductors except their wires
H10N  60/00  S	0	0	4M113	H10N  60/00	360	ɺ	Magnetic shielding materials
H10N  60/00  Z	0	0	4M113	H10N  60/00	428	¾Τ	Others
H10N  60/01  \	1	1	4M113	H10N  60/01	560	¤ޤϽΣ	Manufacture or treatment [2023.01]
H10N  60/01  B	1	0	4M113	H10N  60/01	1822	¤ˡ	Methods of manufacturing thin films
H10N  60/01  C	1	1	4M113	H10N  60/01	299	祻եǻ	For Josephson elements
H10N  60/01  D	1	1	4M113	H10N  60/01	185		Lamination
H10N  60/01  F	1	0	4M113	H10N  60/01	443	βùˡ	Methods of treating thin films
H10N  60/01  J	1	0	4M113	H10N  60/01	953	祻եǻҤ¤ˡ	Methods of manufacturing Josephson elements
H10N  60/01  K	1	0	4M113	H10N  60/01	79	祻եǻҤ¤	Devices to manufacture Josephson elements
H10N  60/01  W	1	0	4M113	H10N  60/01	179	ϩĤ¤ˡ	Methods of manufacturing circuit boards
H10N  60/01  Z	1	0	4M113	H10N  60/01	883	¾Τ	Others
H10N  60/10  \	1	1	4M113	H10N  60/10	95	ܹ˴Ť֡Σ	Junction-based devices [2023.01]
H10N  60/10  G	1	0	4M113	H10N  60/10	734	ĶƳȥ󥸥¿üǻ	Superconductive transistors; multi-terminal elements
H10N  60/10  K	1	0	4M113	H10N  60/10	731	ϩħ	Characterized by the circuits
H10N  60/10  Z	1	0	4M113	H10N  60/10	398	¾Τ	Others
H10N  60/12  \	2	2	4M113	H10N  60/12	2	祻ե֡Σ	Josephson-effect devices [2023.01]
H10N  60/12  A	2	0	4M113	H10N  60/12	1324	祻եǻ	Josephson elements
H10N  60/12  B	2	1	4M113	H10N  60/12	182	ǻ	Memory elements
H10N  60/12  C	2	1	4M113	H10N  60/12	119	ȥ󡦥ǥХ	Soliton devices
H10N  60/12  D	2	1	4M113	H10N  60/12	1082	󥵡żȯޤϸŰɸ	For reference voltage of magnetic sensors, for the reference voltages that are present when magnetic fields emerge and are detected
H10N  60/12  Z	2	0	4M113	H10N  60/12	49	¾Τ	Others
H10N  60/20  \	1	1	4M114	H10N  60/20	25	ʵĶƳ֡Σ	Permanent superconducting devices [2023.01]
H10N  60/20  A	1	0	4M114	H10N  60/20	76	ʵήѵå	Mechanical switches which control the flow of persistent electric current
H10N  60/20  Z	1	0	4M114	H10N  60/20	191	¾Τ	Others
H10N  60/30  \	1	1	4M114	H10N  60/30	527	ĶƳ֤֤Ȥδ֤ڴǽ֡Σ	Devices switchable between superconducting and normal states [2023.01]
H10N  60/35  \	2	2	4M113	H10N  60/35	73	饤ȥΣ	Cryotrons [2023.01]
H10N  60/355  \	3	3	4M114	H10N  60/355	408	ѥ饤ȥΣ	Power cryotrons [2023.01]
H10N  60/80  \	1	1	4M114	H10N  60/80	40	¤ŪΣ	Constructional details [2023.01]
H10N  60/80  A	1	0	4M114	H10N  60/80	168	ĶƳǻҤμ㡥ޥԥ	Mounting superconductive elements, e.g., micropins
H10N  60/80  B	1	0	4M114	H10N  60/80	255	ĶƳǻ	Thin films used for superconductive elements
H10N  60/80  W	1	0	4M114	H10N  60/80	148	ĶƳǻѲϩ	Circuit boards used for superconductive elements
H10N  60/80  D	1	0	4M114	H10N  60/80	227	ĶƳΤ	Lamination of superconductive bodies
H10N  60/80  Z	1	0	4M114	H10N  60/80	277	¾Τ	Others
H10N  60/81  \	2	2	4M114	H10N  60/81	3014	ƴնΣ	Containers; Mountings [2023.01]
H10N  60/82  \	2	2	4M113	H10N  60/82	958	ήϩΣ	Current path [2023.01]
H10N  60/83  \	2	2	4M113	H10N  60/83	10	ǻҤηΣ	Element shape [2023.01]
H10N  60/84  \	2	2	4M113	H10N  60/84	3	ĶƳ֤֤Ȥδ֤ڴǽ֤ΤڴʡΣ	Switching means for devices switchable between superconducting and normal states [2023.01]
H10N  60/85  \	2	2	4M113	H10N  60/85	83	ĶƳγΣ	Superconducting active materials [2023.01]
H10N  60/85  A	2	0	4M113	H10N  60/85	194	⡨°ֲʪ	Alloys; intermetallic compounds
H10N  60/85  B	2	0	4M113	H10N  60/85	23	ͭʪ	Organic
H10N  60/85  C	2	0	4M113	H10N  60/85	1437	ߥå	Ceramics
H10N  60/85  Z	2	0	4M113	H10N  60/85	33	¾Τ	Others
H10N  69/00  \	0	0	4M113	H10N  69/00	63	롼ףȣΣޤ롤ʤȤ⣱ĤĶƳǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023.01]
H10N  70/00  \	0	0	5F093	H10N  70/00	27	Ű̾ɤͭʤήȯޤϥå󥰤äŬ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Solid-state devices having no potential barriers?, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)[2023.01]
H10N  70/00  A	0	0	5F093	H10N  70/00	271	󾽼ȾƳΤ˴ؤ	Related to amorphous semiconductors
H10N  70/00  B	0	1	5F093	H10N  70/00	58	ʪ饹˴ؤ	Related to oxide glasses
H10N  70/00  C	0	0	5F093	H10N  70/00	172	Х륯ޤ췿˴ؤ	Related to those of a bulk type or a thin-film type
H10N  70/00  Z	0	0	5F093	H10N  70/00	316	¾Τ	Others
H10N  70/10  \	1	1	5F093	H10N  70/10	27	οʹ֡Σ	Solid-state travelling-wave devices [2023.01]
H10N  70/20  \	1	1	5F093	H10N  70/20	3719	¿ꥹå֡㡥ꥹΣ	Multistable switching devices, e.g. memristors [2023.01]
H10N  79/00  \	0	0	5F093	H10N  79/00	15	롼ףȣΣޤ롤ʤȤ⣱ĤθǻҤ롤֤ޤʣ֤ΩΡʣңң֣ȣ£Уãң֣ȣ£ˡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023.01]
H10N  80/00  \	0	0	5F094	H10N  80/00	128	Х륯񹳸֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023.01]
H10N  80/10  \	1	1	5F094	H10N  80/10	830	֡Σ	Gunn-effect devices [2023.01]
H10N  89/00  \	0	0	5F094	H10N  89/00	12	롼ףȣΣޤ롤ʤȤ⣱ĤΥХ륯񹳸ǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023.01]
H10N  97/00  \	0	0	5F095	H10N  97/00	1268	¾ʬवʤŵŪޤϸ֡Σ	Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023.01]
H10N  99/00  \	0	0	5F095	H10N  99/00	1693	Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass [2023.01]
