H10P  10/00  \	0	0	5F120	H10P  10/00	0	ϡĤޤ֤ʤΥܥǥ󥰡Σ	Building up of layers, structures or materials[2026.01]
H10P  10/00  A	0	0	5F120	H10P  10/00	0	ܥǥ󥰡Ž碌ˡħ	Characterised by bonding (lamination) methods
H10P  10/00  B	0	1	5F120	H10P  10/00	0	ӣϣ	for SOI
H10P  10/00  F	0	0	5F120	H10P  10/00	0	ܥǥ󥰡Ž碌֤ħ	Characterised by bonding (lamination) devices
H10P  10/00  X	0	0	5F120	H10P  10/00	0	üʴĹ¤Τħ	Characterised by the special substrate structure per se
H10P  10/00  Z	0	0	5F120	H10P  10/00	0	¾Τ	Others
H10P  14/00  \	0	0	5F152	H10P  14/00	0	η㡥ؤޤϥԥ顼˷Σ	Formation of materials, e.g. in the shape of layers or pillars[2026.01]
H10P  14/20  \	1	1	5F152	H10P  14/20	16630	ȾƳκηΣ	of semiconductor materials[2026.01]
H10P  14/22  \	2	2	5F103	H10P  14/22	12544	ʪѤΡ㡥ޤϥѥå󥰡Σ	using physical deposition, e.g. vacuum deposition or sputtering[2026.01]
H10P  14/24  \	2	2	5F045	H10P  14/24	53143	صĹΣã֣ġϤѤΡΣ	using chemical vapour deposition [CVD][2026.01]
H10P  14/26  \	2	2	5F053	H10P  14/26	11001	ѤѤΡΣ	using liquid deposition[2026.01]
H10P  14/40  \	1	1	4M104	H10P  14/40	0	Ƴźޤ񹳺ηΣ	of conductive or resistive materials[2026.01]
H10P  14/42  \	2	2	4M104	H10P  14/42	1976	ΤޤϾѤΡΣ	using a gas or vapour[2026.01]
H10P  14/43  \	3	3	4M104	H10P  14/43	5213	ؾ塤㡥صĹΣã֣ġϡΣ	Chemical deposition, e.g. chemical vapour deposition [CVD][2026.01]
H10P  14/44  \	3	3	4M104	H10P  14/44	1415	ʪĹΣУ֣ġϡΣ	Physical vapour deposition [PVD][2026.01]
H10P  14/45  \	4	4	4M104	H10P  14/45	4400	ѥå󥰡Σ	Sputtering[2026.01]
H10P  14/46  \	2	2	4M104	H10P  14/46	90	ΤѤΡΣ	using a liquid[2026.01]
H10P  14/46 101 \	3	3	4M104	H10P  14/46	2230	ˡ󥯥åˡڡˡ	Coating methods, such as inkjet methods and paste methods
H10P  14/47  \	3	3	4M104	H10P  14/47	135	ŲϽСʤŲä̵ŲäΣ	Electrolytic deposition, i.e. electroplating; Electroless plating[2026.01]
H10P  14/47 101 \	4	4	4M104	H10P  14/47	2666	Ųä	Electrolytic plating
H10P  14/47 102 \	4	4	4M104	H10P  14/47	1851	̵Ųä	Electroless plating
H10P  14/60  \	1	1	5F058	H10P  14/60	0	ηΣ	of insulating materials[2026.01]
H10P  14/60 101 \	2	2	5F045	H10P  14/60	0		Devices
H10P  14/60 101 A	2	0	5F045	H10P  14/60	1520	֤ħ	Characterised by their devices
H10P  14/60 101 B	2	1	5F045	H10P  14/60	9251		Gaseous phase volume devices
H10P  14/60 101 C	2	2	5F045	H10P  14/60	10245	ץ饺ޤѤ	Using plasma
H10P  14/60 101 D	2	2	5F045	H10P  14/60	1106	ѥå	Sputter devices
H10P  14/60 101 E	2	1	5F045	H10P  14/60	3602	Ǯϧ	Heat treatment furnaces
H10P  14/60 101 F	2	1	5F045	H10P  14/60	1713	°	Fittings; jigs
H10P  14/60 101 Z	2	0	5F045	H10P  14/60	1764	¾Τ	Others
H10P  14/61  \	2	2	5F058	H10P  14/61	15	ޥѤΡΣ	using masks[2026.01]
H10P  14/68  \	2	2	5F058	H10P  14/68	0	ͭ㡥եȥ쥸ȡΣ	Organic materials, e.g. photoresists[2026.01]
H10P  14/68  A	2	0	5F058	H10P  14/68	1826	ħΤ	Characterised by their materials
H10P  14/68  B	2	1	5F058	H10P  14/68	1184	ݥꥤߥɼ	Polyamide resins
H10P  14/68  C	2	1	5F058	H10P  14/68	1717	Ǽ	Silicon resins
H10P  14/68  D	2	1	5F058	H10P  14/68	645		Photosensitive resins
H10P  14/68  M	2	0	5F058	H10P  14/68	381	ع¤ͭ	Having laminated structures
H10P  14/68  N	2	1	5F058	H10P  14/68	417	̵ʪؤ	Having inorganic layers
H10P  14/68  Z	2	0	5F058	H10P  14/68	596	¾Τ	Others
H10P  14/69  \	2	2	5F058	H10P  14/69	0	̵Σ	Inorganic materials[2026.01]
H10P  14/69  A	2	0	5F058	H10P  14/69	1423	ħΤ	Characterised by their materials
H10P  14/69  M	2	0	5F058	H10P  14/69	574	ع¤ͭ	Having laminated structures
H10P  14/69  Z	2	0	5F058	H10P  14/69	384	¾Τ	Others
H10P  14/692  \	3	3	5F058	H10P  14/692	0	ʪ饹ʪޤϻʪϥ饹ΡΣ	composed of oxides, glassy oxides or oxide-based glasses[2026.01]
H10P  14/692  A	3	0	5F058	H10P  14/692	646	ľѴ	Direct conversion films
H10P  14/692  S	3	1	5F058	H10P  14/692	2270	Ǯˤ	Using thermal oxidation
H10P  14/692  T	3	1	5F058	H10P  14/692	492	۶˻ˤ	Using anodic oxidation
H10P  14/692  U	3	1	5F058	H10P  14/692	373	ϱսˤ	Using solution processing
H10P  14/692  B	3	0	5F058	H10P  14/692	814		Deposited films
H10P  14/692  X	3	1	5F058	H10P  14/692	6853	Ѥˤ	Using vapour deposition
H10P  14/692  Y	3	2	5F058	H10P  14/692	808	ѥåˤ	Using sputtering
H10P  14/692  C	3	0	5F058	H10P  14/692	620		Post-deposition oxidation
H10P  14/692  G	3	0	5F058	H10P  14/692	2755	饷١	Glassivation
H10P  14/692  H	3	1	5F058	H10P  14/692	351	饹	Glass composition
H10P  14/692  M	3	0	5F058	H10P  14/692	2414	ع¤ͭ	Having laminated structures
H10P  14/692  P	3	0	5F058	H10P  14/692	2093	ν㡥ˡ	Processing after film formation, e.g., annealing
H10P  14/692  Z	3	0	5F058	H10P  14/692	751	¾Τ	Others
H10P  14/694  \	3	3	5F058	H10P  14/694	0	ⲽʪΡΣ	composed of nitrides[2026.01]
H10P  14/694  A	3	0	5F058	H10P  14/694	665	ľѴ	Direct conversion films
H10P  14/694  B	3	0	5F058	H10P  14/694	3907		Deposited films
H10P  14/694  C	3	0	5F058	H10P  14/694	1716	ⲽ	Nitrided films
H10P  14/694  M	3	0	5F058	H10P  14/694	1575	ع¤ͭ	Having laminated structures
H10P  14/694  Z	3	0	5F058	H10P  14/694	360	¾Τ	Others
H10P  30/00  \	0	0	5F054	H10P  30/00	499	ϡĤޤ֤ʤؤΥΣ	Modification of layers, structures or materials[2026.01]
H10P  30/00 101 \	1	1	5F054	H10P  30/00	0	֡ʥӡɤϣȣʣȡ	Ion implantation devices (for ion-beam tubes, see H01J37)
H10P  30/00 101 A	1	0	5F054	H10P  30/00	682	󸻡®	Ion sources and accelerators
H10P  30/00 101 B	1	0	5F054	H10P  30/00	850	ʬΥ	Separation sections, lens sections and scanning sections
H10P  30/00 101 C	1	0	5F054	H10P  30/00	698	ޤϤΤͽ	Injection chambers or spare chambers for that purpose; Conveyance
H10P  30/00 101 D	1	1	5F054	H10P  30/00	1021	ϥۥ	Wafer holders
H10P  30/00 101 Z	1	0	5F054	H10P  30/00	416	¾Τ	Others
H10P  30/20  \	1	1	5F054	H10P  30/20	165	ȾƳκؤΥ㡥ɡԥ󥰤ΤΤΡΣ	into semiconductor materials, e.g. for doping[2026.01]
H10P  30/20  C	1	0	5F054	H10P  30/20	275	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  30/20  F	1	0	5F054	H10P  30/20	2392	¿Ǥߡʣץ饺ޡ	Multiple implantation; Multiple ion injection; Plasma ion injection
H10P  30/20  H	1	0	5F054	H10P  30/20	624	ݸ𤹤륤	Ion injection via protective films
H10P  30/20  J	1	0	5F054	H10P  30/20	896	ΰޤϹΰη	Formation of insulation areas or high-resistance areas
H10P  30/20  K	1	0	5F054	H10P  30/20	77	Υå	Knock-on
H10P  30/20  N	1	0	5F054	H10P  30/20	814	Ų٤ν	Electric charge removal
H10P  30/20  P	1	0	5F054	H10P  30/20	647	ݥꥷꥳؤΥ	Polysilicon ion injection
H10P  30/20  Q	1	0	5F054	H10P  30/20	1591	뾽βѤŪȤ륤	Ion injection for the purpose of altering crystallinity
H10P  30/20  R	1	0	5F054	H10P  30/20	438	¹¤Ф륤	Ion injection into groove structures
H10P  30/20  T	1	0	5F054	H10P  30/20	1240	¬ꡤ	Measurement and control
H10P  30/20  U	1	0	5F054	H10P  30/20	263	ͥ	Channeling
H10P  30/20  V	1	0	5F054	H10P  30/20	833	ӡμФ	Oblique injection of ion beams
H10P  30/20  W	1	0	5F054	H10P  30/20	775	Ӥ˥ѤΤߤħ	Characterised only by using ion injection for a particular use
H10P  30/20  Z	1	0	5F054	H10P  30/20	1566	¾Τ	Others
H10P  30/22  \	2	2	5F054	H10P  30/22	1242	ޥѤΡΣ	using masks[2026.01]
H10P  30/22 101 \	3	3	5F054	H10P  30/22	0	ޥȤƥե饤Ѥ	Using self-alignment as a mask
H10P  30/22 101 C	3	0	5F054	H10P  30/22	174	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  30/22 101 G	3	0	5F054	H10P  30/22	149	ɥ쥤ħΤ	Characterised by source and drain shapes
H10P  30/22 101 V	3	1	5F054	H10P  30/22	233	ӡμФ	Oblique injection of ion beams
H10P  30/22 101 M	3	1	5F054	H10P  30/22	935	Ȥ¦ɤѤԤ	Injection using the side walls of the gate
H10P  30/22 101 X	3	0	5F054	H10P  30/22	403	礵	Alignment with oxide films
H10P  30/22 101 Z	3	0	5F054	H10P  30/22	287	¾Τ	Others
H10P  30/28  \	2	2	5F054	H10P  30/28	0	ˡ빩ħΤΡ㡥ɡѥȤ뤿ΤΡΣ	characterised by an annealing step, e.g. for activation of dopants[2026.01]
H10P  30/28  C	2	0	5F054	H10P  30/28	757	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  30/28  H	2	0	5F054	H10P  30/28	1404	ҡѤΡǮʤʤ	Using heater; with unknown heating means
H10P  30/28  J	2	0	5F054	H10P  30/28	1011	פޤϣ̣ţĤѤΡңԣˤ	Using lamps or LEDs; by RTA
H10P  30/28  M	2	0	5F054	H10P  30/28	1102	żȡ㡥졼ޥȤѤ	Using electromagnetic radiation, e.g., laser and microwave radiation
H10P  30/28  Z	2	0	5F054	H10P  30/28	211	¾Τ	Others
H10P  30/40  \	1	1	5F054	H10P  30/40	302	ؤΥΣ	into insulating materials[2026.01]
H10P  32/00  \	0	0	5F042	H10P  32/00	0	ϡĤޤ֤ʤǤΡؤΡޤϤ餫鳰ؤΥɡѥȤγȻʺη˳ȻΣȣУˡΣ	Diffusion of dopants within, into, or out of wafers, substrates or parts of devices (during formation of materials H10P0014000000)[2026.01]
H10P  32/00 101 \	1	1	5F042	H10P  32/00	0	Ȼ	Horizontal diffusion devices
H10P  32/00 101 D	1	0	5F042	H10P  32/00	1006	Ȼ֤ι¤ħ	Horizontal diffusion devices characterised by their structures
H10P  32/00 101 A	1	1	5F042	H10P  32/00	631	Ǯˡħ	Characterised by the heating method
H10P  32/00 101 L	1	2	5F042	H10P  32/00	123	ȼͤˤǮ	Heating by light
H10P  32/00 101 C	1	1	5F042	H10P  32/00	89	ˡħΤ	Characterised by the cooling method
H10P  32/00 101 B	1	1	5F042	H10P  32/00	504	ȻܡȤΰˡħΤ	Characterised by diffusion port transfer methods
H10P  32/00 101 S	1	1	5F042	H10P  32/00	454	ƳӽзϩħΤ	Characterised by gas introduction and emission paths
H10P  32/00 101 F	1	1	5F042	H10P  32/00	255	Τͭ	Having shielding bodies
H10P  32/00 101 G	1	1	5F042	H10P  32/00	770	ϻٻħΤ	Characterised by wafer support jigs
H10P  32/00 101 H	1	1	5F042	H10P  32/00	99	ɤͭ	Having auxiliary tubes
H10P  32/00 101 J	1	1	5F042	H10P  32/00	191	ϤΰܤؤħΤ	Characterised by transfer of wafers
H10P  32/00 101 K	1	1	5F042	H10P  32/00	239	ϧɤ	Reactor core tube cleaning
H10P  32/00 101 M	1	1	5F042	H10P  32/00	546	ϧɡϻٻκħΤ	Characterised by the materials of reactor core tube wafer support jigs
H10P  32/00 101 N	1	1	5F042	H10P  32/00	326	¬ǮʤħΤ	Characterised by their heat measurement methods
H10P  32/00 101 R	1	1	5F042	H10P  32/00	118	ϧϥϻٻ񤬲ž	The furnace body or the wafer support jig rotates
H10P  32/00 101 Z	1	0	5F042	H10P  32/00	22	¾	Others
H10P  32/00 201 \	1	1	5F042	H10P  32/00	0	ķȻ	Vertical diffusion devices
H10P  32/00 201 Q	1	0	5F042	H10P  32/00	1337	ķȻ֤ι¤ħ	Characterised by the structure of vertical diffusion devices
H10P  32/00 201 A	1	1	5F042	H10P  32/00	699	Ǯˡħ	Characterised by Characterised by heating and cooling methods
H10P  32/00 201 B	1	1	5F042	H10P  32/00	236	ȻܡȤΰˡħΤ	Characterised by diffusion port conveyance methods
H10P  32/00 201 S	1	1	5F042	H10P  32/00	586	ƳӽзϩħΤ	Characterised by gas introduction and emission paths
H10P  32/00 201 G	1	1	5F042	H10P  32/00	731	ϻٻħΤ	Characterised by wafer support jigs
H10P  32/00 201 H	1	1	5F042	H10P  32/00	67	ɤͭ	Having auxiliary tubes
H10P  32/00 201 J	1	1	5F042	H10P  32/00	297	ϤΰܤؤħΤ	Characterised by transfer of wafers
H10P  32/00 201 M	1	1	5F042	H10P  32/00	175	ϧĴɡϻٻκħΤ	Characterised by the materials of reactor core tube wafer support jigs
H10P  32/00 201 R	1	1	5F042	H10P  32/00	91	ϧϥϻٻ񤬲ž	The furnace body or the wafer support jig rotates
H10P  32/00 201 Z	1	0	5F042	H10P  32/00	50	¾	Others
H10P  32/10  \	1	1	5F042	H10P  32/10	84	ȾƳΤޤȾƳؤǤΡؤΡޤϤ餫鳰ؤΥɡѥȤγȻΣ	Diffusion of dopants within, into or out of semiconductor bodies or layers[2026.01]
H10P  32/10  C	1	0	5F042	H10P  32/10	597	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  32/10  E	1	0	5F042	H10P  32/10	711	⥨ͥ륮㡥졼ӡࡤŻҥӡࡤӡࡤץ饺޽ȳȻȹ碌	High energy treatment, e.g. laser beams, electron beams, ion beams and plasma treatment, and  combinations with diffusion.
H10P  32/10  P	1	0	5F042	H10P  32/10	293	ץǥݥؤν㡥ץǥݥ˥ɥ饤֥󤹤ΤޤʳȻ	Treatment of pre-deposition layers, e.g., drive-in after pre-deposition or 2-stage diffusion
H10P  32/10  S	1	0	5F042	H10P  32/10	339	Ȼ	Selective diffusion
H10P  32/10  T	1	1	5F042	H10P  32/10	298	Ȼޥκ¤ˡħΤ	Characterised by the materials, structures, and fabrication methods of diffusion masks
H10P  32/10  U	1	1	5F042	H10P  32/10	47	Ȼ	Transverse diffusion
H10P  32/10  V	1	1	5F042	H10P  32/10	122	¤ѤȻ	Selective diffusion using grooves
H10P  32/10  W	1	1	5F042	H10P  32/10	35	¿ѤȻ	Selective diffusion using porous structures
H10P  32/10  X	1	1	5F042	H10P  32/10	85	Ȼֹ碌ե饤	Diffusion alignment and self-alignment
H10P  32/10  Y	1	0	5F042	H10P  32/10	210	Ȼ	Pre-treatment and post-treatment of diffusion
H10P  32/10  Z	1	0	5F042	H10P  32/10	684	¾Τ	Others
H10P  32/10 101 \	2	2	5F042	H10P  32/10	692	ȾƳΤԽʪ㡥ɡԥ󥰺Ŷ˺ι	Alloys of semiconductor body materials and impurity materials, such as doping materials and electrode materials
H10P  32/12  \	2	2	5F042	H10P  32/12	11	ȵδ֤ǤγȻΣ	between a solid phase and a gaseous phase[2026.01]
H10P  32/12  C	2	0	5F042	H10P  32/12	37	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  32/12  D	2	0	5F042	H10P  32/12	75	ȥǥե塼	Utilization of out diffusion
H10P  32/12  L	2	0	5F042	H10P  32/12	52	Х֥顼ħΤȻ	Diffusion devices characterized by bubblers
H10P  32/12  T	2	0	5F042	H10P  32/12	185	ɳȻ㡥ץ	Sealed tube diffusion, e.g., ampoule
H10P  32/12  U	2	0	5F042	H10P  32/12	34	ȾɳȻ㡥ܥåˡ	Semi-sealed tube diffusion, e.g., the box method
H10P  32/12  V	2	0	5F042	H10P  32/12	103	Ȼ	Vacuum diffusion
H10P  32/12  W	2	0	5F042	H10P  32/12	86	Ϥ֤ħΤΡ㡥Ф֤ޤ礻	Characterised by the arrangement of wafers, e.g., tilted arrangement or back-to-back arrangement
H10P  32/12  X	2	0	5F042	H10P  32/12	92	ξȻ֤ħΤ	Characterised by the arrangement of solid-state diffusion sources
H10P  32/12  Y	2	0	5F042	H10P  32/12	135	ξȻι¤ħΤΡ㡥ϤƱγȻġع¤	Characterised by the structures and materials of solid-state diffusion sources, e.g., diffusion source boards shaped like a wafer and laminated structures
H10P  32/12  Z	2	0	5F042	H10P  32/12	131	¾Τ	Others
H10P  32/14  \	2	2	5F042	H10P  32/14	33	ñȾƳΤޤϸñȾƳؤǤγȻ˸ǤۤʤȾƳΤޤȾƳؤδ֤γȻΣ	within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase[2026.01]
H10P  32/14  C	2	0	5F042	H10P  32/14	41	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  32/14  D	2	0	5F042	H10P  32/14	144	ȻħΤ	Characterised by diffusion sources
H10P  32/14  M	2	1	5F042	H10P  32/14	302	°°ʪ	Metals and metal compounds
H10P  32/14  N	2	1	5F042	H10P  32/14	38	°ⲽ	Metal nitride films
H10P  32/14  P	2	1	5F042	H10P  32/14	516	ɡץɥꥳ	Doped silicon
H10P  32/14  Q	2	1	5F042	H10P  32/14	630	ɡץɥ	Doped oxide
H10P  32/14  R	2	0	5F042	H10P  32/14	842	ˡˤΡȻˤΡեŽդˤ	by using the application method; by diffusion source vapour deposition; by film mounting
H10P  32/14  S	2	0	5F042	H10P  32/14	69	ˡˤ	by pressure welding
H10P  32/14  Z	2	0	5F042	H10P  32/14	48	¾Τ	Others
H10P  32/16  \	2	2	5F042	H10P  32/16	60	ȱδ֤ǤγȻΣ	between a solid phase and a liquid phase[2026.01]
H10P  32/20  \	1	1	5F042	H10P  32/20	0	ؤΥɡԥ󥰤ΤΥɡѥȤγȻΣ	Diffusion for doping of insulating layers[2026.01]
H10P  32/30  \	1	1	5F042	H10P  32/30	0	ƳؤޤؤΥɡԥ󥰤ΤΥɡѥȤγȻΣ	Diffusion for doping of conductive or resistive layers[2026.01]
H10P  34/00  \	0	0	5F054	H10P  34/00	25	ϡĤޤ֤ʤФżռޤγռξȼ͡Σ	Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices[2026.01]
H10P  34/00  E	0	0	5F054	H10P  34/00	72	פޤϣ̣ţľȼ͡ϣȣУå󥰤ϣȣУͥ	Lamp or LED irradiation (for film formation, H10P14 takes precedence, and for etching, H10P50 does)
H10P  34/00  F	0	1	5F054	H10P  34/00	558	פޤϣ̣ţĥˡʷ뾽ĹΥˡϣȣУκݤΥˡϣȣУͥ	Lamp or LED annealing (for annealing during crystal growth, H10P14/20 takes precedence and for annealing during ion implantation, H10P30/28 does)
H10P  34/00  G	0	1	5F054	H10P  34/00	1022	פޤϣ̣ţľȼ	Lamp or LED irradiation devices
H10P  34/00  J	0	2	5F054	H10P  34/00	849	פޤϣ̣ţľȼͷ	Lamp or LED irradiation system
H10P  34/00  Q	0	2	5F054	H10P  34/00	524	ϻٻ	Wafer support jigs
H10P  34/00  T	0	1	5F054	H10P  34/00	912	¬ꡤ	Measurement and control
H10P  34/00  Z	0	0	5F054	H10P  34/00	61	¾Τ	Others
H10P  34/20  \	1	1	5F054	H10P  34/20	111	ǤѴȿΤΡΣ	for inducing a nuclear reaction transmuting chemical elements[2026.01]
H10P  34/40  \	1	1	5F054	H10P  34/40	236	⥨ͥ륮ռˤΡΣ	with high-energy radiation[2026.01]
H10P  34/40  E	1	0	5F054	H10P  34/40	251	ŻȼͤˤΡϣȣУå󥰤ϣȣУϪϣȣУͥ	by electron beam irradiation (for film formation, H10P14 takes precedence, for etching, H10P50 takes precedence, and for exposure, H10P76 does)
H10P  34/40  F	1	1	5F054	H10P  34/40	74	ˡΤΤΡʷ뾽ĹΥˡϣȣУκݤΥˡϣȣУͥ	for annealing (Annealing during crystal growth takes precedence in H10P14/20 and for annealing during ion implantation, H10P30/28 does)
H10P  34/40  Z	1	0	5F054	H10P  34/40	45	¾ΤΡ㡥ӡॢˡ	Others, e.g., ion beam annealing
H10P  34/42  \	2	2	5F054	H10P  34/42	52	żռˤΡ㡥졼ˡʥ졼ǣȣУˡΣ	with electromagnetic radiation, e.g. laser annealing (laser cutting H10P0054200000)[2026.01]
H10P  34/42  E	2	0	5F054	H10P  34/42	260	졼ȼͤˤΡϣȣУå󥰤ϣȣУͥ	by laser irradiation (for film formation, H10P14 takes precedence and for etching, H10P50 does)
H10P  34/42  F	2	1	5F054	H10P  34/42	978	졼ˡʷ뾽ĹΥˡϣȣУκݤΥˡϣȣУͥ	Laser annealing (for annealing during crystal growth, H10P14/20 takes precedence and for annealing during ion implantation, H10P30/28 does)
H10P  34/42  G	2	1	5F054	H10P  34/42	792	졼ӡȼ	Laser beam irradiation devices
H10P  34/42  J	2	2	5F054	H10P  34/42	1739	ӡȼͷ	Beam irradiation systems
H10P  34/42  T	2	1	5F054	H10P  34/42	803	¬ꡤ	Measurement and control
H10P  34/42  Z	2	0	5F054	H10P  34/42	452	¾Τ	Others
H10P  36/00  \	0	0	5F054	H10P  36/00	0	ȾƳΥå󥰡Σ	Gettering within semiconductor bodies[2026.01]
H10P  36/00  C	0	0	5F054	H10P  36/00	64	²ʪȾƳΤ˴ؤ	Related to semiconductor compounds from groups 3 to 5
H10P  36/00  E	0	0	5F054	H10P  36/00	176	⥨ͥ륮ӡˤ	using high-energy beams
H10P  36/00  J	0	1	5F054	H10P  36/00	550	ӡˤ	Using ion beams
H10P  36/00  M	0	0	5F054	H10P  36/00	283	ŪŪĤˤ	Due to mechanical and chemical distortion
H10P  36/00  N	0	0	5F054	H10P  36/00	79	ⲽˤ	Using nitride films
H10P  36/00  P	0	0	5F054	H10P  36/00	358	¿뾽ˤ	Using polycrystalline films
H10P  36/00  Q	0	0	5F054	H10P  36/00	154	ˤ	Using oxidefilms
H10P  36/00  R	0	0	5F054	H10P  36/00	458	󡦥ܥˤ	Using phosphate and boron
H10P  36/00  S	0	0	5F054	H10P  36/00	74	°㡥Σ顤У⡤ãˤ	Using metals, e.g., Ni, Pb and Cu
H10P  36/00  X	0	0	5F054	H10P  36/00	195	ϥˤ	Using halogens
H10P  36/00  Z	0	0	5F054	H10P  36/00	360	¾Τ	Others
H10P  36/20  \	1	1	5F054	H10P  36/20	1353	ȥ󥷥åå󥰡ʤꥳ¸ߤǤѤƷ٤ǮŪͶΡΣ	Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body[2026.01]
H10P  50/00  \	0	0	5F004	H10P  50/00	0	ϡĤޤ֤ʤΥå󥰡Σ	Removal of layers, structures or materials[2026.01]
H10P  50/20  \	1	1	5F004	H10P  50/20	0	ɥ饤å󥰡ץ饺ޥå󥰡ȿ󥨥å󥰡Σ	Dry etching; Plasma etching; Reactive-ion etching[2026.01]
H10P  50/20 100 \	2	2	5F004	H10P  50/20	94	ץ饺ޥå	Plasma etching
H10P  50/20 101 \	3	3	5F004	H10P  50/20	0	ץ饺ޥå	Plasma etching devices
H10P  50/20 101 B	3	0	5F004	H10P  50/20	7138	ʿʿķ㡥̷緿ңɣšȿ	Parallel flat plate types, e.g., capacitive coupling types, RIEs, and two-frequency types
H10P  50/20 101 C	3	0	5F004	H10P  50/20	3318	ͶƳ緿㡥ԣãСϿɸˡɣãСإꥳȷ	Inductive coupling types, e.g., TCP(Registered Trademark)s, ICPs, and helicon wave types
H10P  50/20 101 D	3	0	5F004	H10P  50/20	6268	ޥ嵯ޤϣգȣ嵯㡥ţãҡƶ	Microwave or UHF wave excitation types, e.g., ECRs and cavity resonance types
H10P  50/20 101 E	3	0	5F004	H10P  50/20	1017	ɽץ饺ޡ㡥絤šУãšߥѡޥ˥󥰡Σã֣͡	Local plasma, e.g., atmospheric discharge, PACE, and chemical vapour machining (CVM)
H10P  50/20 101 F	3	0	5F004	H10P  50/20	537	طХå֡㡥Х뷿å󥰥ȥͥ	Wafer lamination batch processing devices, e.g., barrel types and etching tunnel types
H10P  50/20 101 G	3	0	5F004	H10P  50/20	10290	ִֶ̻ࡤ㡥ѵǮťå۴ɡ֤ץߥ졼ޤ¾ȾƳ¤Ȥȹ礻	Common items between systems, e.g., substrate cooling mechanisms, heating mechanisms, electrostatic chucks, piping, process-to-process conveyance, process simulation, or combinations with other semiconductor manufacturing equipment
H10P  50/20 101 H	3	1	5F004	H10P  50/20	2136	֤㡥ɥ꡼˥󥰡	Cleaning treatment of devices, e.g., device wall cleaning and aging
H10P  50/20 101 M	3	1	5F004	H10P  50/20	440	ƥʥθ	Improvemnet in maintenability
H10P  50/20 101 L	3	1	5F004	H10P  50/20	387	ŶˤκŶˤηˡ	Materials for electrodes; methods for forming electrodes
H10P  50/20 101 R	3	1	5F004	H10P  50/20	815	Хåɥ롤ʤĤ΢̤κ̩夹ʬǮƳ򶡵뤷ǮŪܿ	Back side gas supply, i.e., for supplying thermally conductive gas to the portion that will closely contact the mounting stand on the back side of the treated substrate to improve thermal contact
H10P  50/20 101 Z	3	0	5F004	H10P  50/20	1934	¾	Others
H10P  50/20 102 \	3	3	5F004	H10P  50/20	1875	Ĥ㡥̤Υ꡼˥	Cleaning treatment of substrates, e.g., cleaning of substrate surfaces
H10P  50/20 103 \	3	3	5F004	H10P  50/20	3011	å󥰤νΤޤϥץ饺ޤΥ˥󥰡㡥ʬʬϡ̸Ρȷνˡ	End point detection or plasma monitoring, e.g., spectroscopic analysis, mass detection, and detected waveform processing methods
H10P  50/20 104 \	3	3	5F004	H10P  50/20	219	ȣУʬवʤ泌åʪ	Etched materials not classified in H10P50/24-28
H10P  50/20 105 \	3	3	5F004	H10P  50/20	0	üù	Special fabrication
H10P  50/20 105 A	3	0	5F004	H10P  50/20	9874	泌åʪꤷʤѥ˥󥰡ץ饺ޤѤʤ㡼åɻߵ	Patterning without specifying etched materials; charge-up prevention techniques that do not use plasma
H10P  50/20 105 B	3	0	5F004	H10P  50/20	3312	泌åʪꤷʤåХåޤʿó	Etch back or planarisation techniques that do not specify etched materials
H10P  50/20 105 Z	3	0	5F004	H10P  50/20	1244	¾	Others
H10P  50/20 106 \	3	3	5F004	H10P  50/20	590	ץ饺޸㡥å󥰽Υץ饺ޤѤޤϥץ饺ޤѤ㡼åɻߵ	Post plasma processing, e.g., plasma-based post etching treatments or plasma-based charge-up prevention techniques
H10P  50/20 201 \	2	2	5F004	H10P  50/20	0	ץ饺ޤѤʤå	Plasma-free etching
H10P  50/20 201 A	2	0	5F004	H10P  50/20	1879	ץ饺ޤѤʤꥨå󥰡㡥ⲹ֤ΥȤܿˤ륨å󥰤ޤϾˤ륨å	Plasma-free vapour phase etching, e.g., etching by contacting with high-temperature gas or vapour etching
H10P  50/20 201 B	2	0	5F004	H10P  50/20	2372	ͥ륮ӡ२å󥰡㡥ƣɣ¡«ӡࡤ֥졼ޤŻҥӡ२å	Energy beam etching, e.g., FIB (focused ion beam), ablation or electron beam etching
H10P  50/20 201 Z	2	0	5F004	H10P  50/20	359	¾	Others
H10P  50/20 301 \	2	2	5F004	H10P  50/20	0	ءʤ泌åؤȥå󥰤ʤβؤȤ뤳ȤŪȤ빽¤	A base material layer, i.e., a structure intended to increase selectivity between the etched layer and the unetched layer below it
H10P  50/20 301 S	2	0	5F004	H10P  50/20	2768	ؤꥳ	Having a base layer made of silicon oxide film
H10P  50/20 301 N	2	0	5F004	H10P  50/20	1190	ؤꥳⲽ	Having a base layer made of a silicon nitride film
H10P  50/20 301 M	2	0	5F004	H10P  50/20	663	ؤ°	Having a base layer made of metal film
H10P  50/20 301 G	2	1	5F004	H10P  50/20	299	ؤߥ˥	Having a base layer made of aluminum
H10P  50/20 301 Z	2	0	5F004	H10P  50/20	4228	¾	Others
H10P  50/20 400 \	2	2	5F004	H10P  50/20	1683	å󥰤ˤɽ̤ʪŪޤϷѴ㡥ݥꥷ󥰤ޤ	Changing surface physical characteristics or shape, e.g., polishing or cutting
H10P  50/24  \	2	2	5F004	H10P  50/24	11938	ȾƳκФΡΣ	of semiconductor materials[2026.01]
H10P  50/26  \	2	2	5F004	H10P  50/26	9142	Ƴźޤ񹳺ФΡΣ	of conductive or resistive materials[2026.01]
H10P  50/28  \	2	2	5F004	H10P  50/28	18807	ФΡΣ	of insulating materials[2026.01]
H10P  50/60  \	1	1	5F043	H10P  50/60	0	åȥå󥰡Σ	Wet etching[2026.01]
H10P  50/60  A	1	0	5F043	H10P  50/60	3592	åȥåˡ	Wet etching methods in general
H10P  50/60  J	1	0	5F043	H10P  50/60	4326	åȥå	Wet etching devices
H10P  50/60  U	1	0	5F043	H10P  50/60	408		End point detection
H10P  50/60  M	1	0	5F043	H10P  50/60	643	Ūޤϥɽʿ경	Chemical polishing or wafer surface smoothing
H10P  50/60  N	1	0	5F043	H10P  50/60	800	եȥˡ	Lift-off methods
H10P  50/60  P	1	0	5F043	H10P  50/60	350	åˡ	Under-etching methods
H10P  50/60  Q	1	0	5F043	H10P  50/60	682	ơѡå󥰡ʿóޤʺɻ	Taper etching; planarization or step prevention
H10P  50/60  R	1	0	5F043	H10P  50/60	1931	ץ졼åˡޤ	Spray etching methods or devices
H10P  50/60  S	1	0	5F043	H10P  50/60	540	ɥ饤å󥰤ȥåȥå󥰤³ƹԤ	Sequential dry etching and wet etching
H10P  50/60  T	1	0	5F043	H10P  50/60	267	Υå	Etching after ion implantation
H10P  50/60  V	1	0	5F043	H10P  50/60	814	ȣУʬवʤФ륨å󥰱դޤϱħ	Characterised by etching liquid or liquid composition for materials not provided for in H10P50/64-50/68
H10P  50/60  Z	1	0	5F043	H10P  50/60	880	¾	Others
H10P  50/61  \	2	2	5F043	H10P  50/61	996	Ų򥨥å󥰡Σ	Electrolytic etching[2026.01]
H10P  50/64  \	2	2	5F043	H10P  50/64	0	ȾƳκФΡΣ	of semiconductor materials[2026.01]
H10P  50/64  A	2	0	5F043	H10P  50/64	842	ӣ顤ǣ	for Si and Ge
H10P  50/64  B	2	0	5F043	H10P  50/64	589	ӣ顤ǣʳ	for items other than Si and Ge
H10P  50/64  C	2	0	5F043	H10P  50/64	376	Ϥʬ	for wafer division
H10P  50/64  Z	2	0	5F043	H10P  50/64	0	¾	Others
H10P  50/66  \	2	2	5F043	H10P  50/66	2688	Ƴźޤ񹳺ФΡΣ	of conductive or resistive materials[2026.01]
H10P  50/68  \	2	2	5F043	H10P  50/68	0	ФΡΣ	of insulating materials[2026.01]
H10P  50/68  A	2	0	5F043	H10P  50/68	2090		for insulating films
H10P  50/68  B	2	1	5F043	H10P  50/68	537	ⲽ	for nitride films
H10P  50/68  Z	2	0	5F043	H10P  50/68	0	¾	Others
H10P  52/00  \	0	0	5F057	H10P  52/00	0	ϡĤޤ֤ʤθåԥ󥰤ޤϸΣ	Grinding, lapping or polishing of wafers, substrates or parts of devices[2026.01]
H10P  52/00  A	0	0	5F057	H10P  52/00	1796	̸	Single-sided polishing
H10P  52/00  B	0	0	5F057	H10P  52/00	965	ξ̸	Double-sided polishing
H10P  52/00  C	0	0	5F057	H10P  52/00	4661		Grinding
H10P  52/00  D	0	0	5F057	H10P  52/00	4558	ۡ᥷ȡ	Polishing cloths, polishing sheets, and grinding stones
H10P  52/00  E	0	0	5F057	H10P  52/00	2909		Abrasives
H10P  52/00  F	0	1	5F057	H10P  52/00	785	γ	Particles
H10P  52/00  G	0	1	5F057	H10P  52/00	804	ϱ	Solution
H10P  52/00  H	0	1	5F057	H10P  52/00	4905	γҤϱդκʪ㡥꡼Τ	Particulate and liquid mixtures, e.g., in the form of slurry
H10P  52/00  J	0	0	5F057	H10P  52/00	1293	դζ롤	Supply, recovery, and reuse of polishing liquid
H10P  52/00  K	0	0	5F057	H10P  52/00	1294	֤ؤδĤݻ	Substrate retention for devices
H10P  52/00  L	0	1	5F057	H10P  52/00	890	ˤΡ㡥å	Using adsorption, e.g., vacuum chucks
H10P  52/00  M	0	1	5F057	H10P  52/00	2826	ˤΡ㡥ݸ	Using adhesion, e.g., protective films
H10P  52/00  N	0	1	5F057	H10P  52/00	920	ĤβĴ㡥ήΤˤ벡	Substrate pressing force control, e.g., pressing force applied by fluids
H10P  52/00  P	0	0	5F057	H10P  52/00	1035	֤ؤδĤŽդ	Mounting and removal of substrates on and off devices
H10P  52/00  Q	0	0	5F057	H10P  52/00	1202	ۤΩơɥå	Dressing of polishing cloths
H10P  52/00  R	0	0	5F057	H10P  52/00	1486	ʥեåν	Pretreatment; knife-edge treatment
H10P  52/00  S	0	0	5F057	H10P  52/00	795		Post-treatment
H10P  52/00  T	0	0	5F057	H10P  52/00	3892	Ĥ	Substrate cleaning
H10P  52/00  U	0	0	5F057	H10P  52/00	1992	桤Ĵ㡥ž٤ޤ	Control and regulation, e.g., number of revolutions, temperature or cooling
H10P  52/00  V	0	0	5F057	H10P  52/00	1991	θΡʿó٤¬	Detecting end point, and measuring film thickness and flatness
H10P  52/00  W	0	0	5F057	H10P  52/00	1254	ӣʳδġӣϣɴġŽ碌	Substrates other than Si, SOI substrates, laminated substrates, etc.
H10P  52/00  X	0	0	5F057	H10P  52/00	2701	ش	Wiring and interlayer insulating films
H10P  52/00  Y	0	0	5F057	H10P  52/00	1073	Ĥüθޤϸ㡥åΥåեޤ̼	Polishing or grinding of substrate edges and the like, e.g., edges, notches, orifices, or chamfers
H10P  52/00  Z	0	0	5F057	H10P  52/00	780	¾	Others
H10P  52/20  \	1	1	5F057	H10P  52/20	229	ŵظΣţͣСϡŵصΣţãͣСϡΣ	Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP][2026.01]
H10P  52/40  \	1	1	5F057	H10P  52/40	12819	صΣãͣСϡŵصȣУˡΣ	Chemomechanical polishing [CMP] (electrochemical mechanical polishing H10P0052200000)[2026.01]
H10P  54/00  \	0	0	5F057	H10P  54/00	152	ϡĤޤ֤ʤǤޤʬΥΣ	Cutting or separating of wafers, substrates or parts of devices[2026.01]
H10P  54/20  \	1	1	5F057	H10P  54/20	0	졼ѤΡΣ	by laser cutting[2026.01]
H10P  54/20 101 \	2	2	5F057	H10P  54/20	531	饤󥰤˴ؤ	Related to slicing
H10P  54/20 201 \	2	2	5F057	H10P  54/20	903	ʿ̤ľǤ	Cutting a plane in the vertical direction
H10P  54/30  \	1	1	5F057	H10P  54/30	856	ǤʬΤ˼岽ΰΡ㡥졼ޤϥˤΡΣ	by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation[2026.01]
H10P  54/40  \	1	1	5F057	H10P  54/40	0	󥰤ˤΡ㡥ž֥졼ɤưϤѤΡΣ	by sawing, e.g. using revolving or reciprocating blades[2026.01]
H10P  54/40 101 \	2	2	5F057	H10P  54/40	0	饤󥰤˴ؤ	Related to slicing
H10P  54/40 101 R	2	0	5F057	H10P  54/40	392	žϤˤ	Using revolving blades
H10P  54/40 101 W	2	0	5F057	H10P  54/40	1252	磻䡼ޤϱưϤˤ	Using wire saws or reciprocating blades
H10P  54/40 101 Z	2	0	5F057	H10P  54/40	0	¾Τ	Others
H10P  54/40 201 \	2	2	5F057	H10P  54/40	0	ʿ̤ľǤ	Cutting a plane vertically
H10P  54/50  \	1	1	5F057	H10P  54/50	733	饤ӥ󥰡֥졼󥰤ޤˤΡΣ	by scoring, breaking or cleaving[2026.01]
H10P  54/90  \	1	1	5F057	H10P  54/90	0	Ūˡޤ֡Σ	Auxiliary processes or arrangements[2026.01]
H10P  54/90 101 \	2	2	5F057	H10P  54/90	0	饤󥰤˴ؤ	Related to slicing
H10P  54/90 101 B	2	0	5F057	H10P  54/90	317	饤󥰤㡥󥴥åȤФ󥴥åȤμ	Pre-treatment of slicing, e.g., ingot orientation and ingot pedestals
H10P  54/90 101 A	2	0	5F057	H10P  54/90	286	饤󥰤θ㡥饤ΥϤμ	Post-treatment of slicing, e.g., wafer reception after slicing
H10P  54/90 101 Z	2	0	5F057	H10P  54/90	199	¾ΤΡ㡥ϤФȻޤϤ¾νȶ˹Ԥ	Others, e.g., occurring along with diffusion into and adhesion on the wafer, or other processing
H10P  54/90 201 \	2	2	5F057	H10P  54/90	0	ʿ̤ľǤ	Cutting a plane vertically
H10P  54/92  \	2	2	5F057	H10P  54/92	215	Ǥޤʬ˥ϤޤϴĤɽ̤ݸޤ䶯뤿ΤΡ㡥ǴơפѤΡΣ	for protecting or reinforcing the surface of wafers or substrates during cutting or separating, e.g. using adhesive tapes[2026.01]
H10P  54/94  \	2	2	5F057	H10P  54/94	124	㡥ǴơפޤϻٻΤνΣ	After-treatments, e.g. removal of adhesive tapes or supports[2026.01]
H10P  56/00  \	0	0	5F120	H10P  56/00	0	ϡĤޤ֤ʤΥǥܥǥ󥰡Σ	Debonding of wafers, substrates or parts of devices[2026.01]
H10P  56/00  A	0	0	5F120	H10P  56/00	0	ǥܥǥ󥰡Υˡޤ֤ħ	Characterised by debonding (peeling) methods or devices
H10P  56/00  X	0	0	5F120	H10P  56/00	0	åΥȡ䶯θ§Ϳʤ	Chip debonding, sheets, reinforcement, etc. (not provided in principle)
H10P  56/00  Z	0	0	5F120	H10P  56/00	0	¾Τ	Others
H10P  58/00  \	0	0	5F063	H10P  58/00	0	ϤޤϴĤʣΥåפ˸ҲΡʤ󥰡Σ	Singulating wafers or substrates into multiple chips, i.e. dicing[2026.01]
H10P  58/00  A	0	0	5F063	H10P  58/00	556	ʬ	Dividing
H10P  58/00  B	0	0	5F063	H10P  58/00	4247	졼Ѥ	Using lasers
H10P  58/00  C	0	0	5F063	H10P  58/00	851	󥰥饤󸡽Сַ	Dicing line detection and positioning
H10P  58/00  F	0	0	5F063	H10P  58/00	3988	ž֥졼	Rotary blades
H10P  58/00  G	0	0	5F063	H10P  58/00	275	ɡå	Diamond cutters
H10P  58/00  H	0	0	5F063	H10P  58/00	59	ɥ֥饹	Sand blasting
H10P  58/00  L	0	0	5F063	H10P  58/00	2288	Ϥ饤֥饤η¤	Wafer pretreatment; scribeline shapes and structures
H10P  58/00  M	0	0	5F063	H10P  58/00	6351	Ϥ塤䶯󥰼㡥󥰥ơ	Wafer adhesion, reinforcement, and dicing jigs, e.g., dicing tapes
H10P  58/00  N	0	0	5F063	H10P  58/00	1007	Ϥݻ	Wafer retention and conveyance
H10P  58/00  P	0	0	5F063	H10P  58/00	1261	ϤθơΥ	Post-treatment of wafers and removal of tapes and the like
H10P  58/00  Q	0	0	5F063	H10P  58/00	4511	ˡʬȼʤϢ	Dicing methods and series of processes involving division
H10P  58/00  R	0	0	5F063	H10P  58/00	395	󥰸ΥϤޤϥåפη¤ħ	Characterised by the shapes or the structures of wafers or chips after dicing
H10P  58/00  S	0	0	5F063	H10P  58/00	1384	ʤȤ⥨å󥰤Ѥ	At least using etching methods
H10P  58/00  T	0	0	5F063	H10P  58/00	546	å	Cracking
H10P  58/00  U	0	1	5F063	H10P  58/00	329	뾽̤˱褦	Along cleavage crystal planes
H10P  58/00  V	0	0	5F063	H10P  58/00	1131	󥰸奯å󥰤Ԥʤ	Undergoing cracking after dicing
H10P  58/00  W	0	0	5F063	H10P  58/00	821	ڡ	Spacing
H10P  58/00  X	0	0	5F063	H10P  58/00	632	ʤȤ⥯å󥰤ȥڡ󥰤ξԤʤ	at least undergoing both cracking and spacing
H10P  58/00  Y	0	0	5F063	H10P  58/00	1178	ԥå󥰡åפμ	Picking and chip removal
H10P  58/00  Z	0	0	5F063	H10P  58/00	208	¾Τ	Others
H10P  70/00  \	0	0	5F157	H10P  70/00	0	ϡĤޤ֤ʤΣ	Other manufacture or treatment[2026.01]
H10P  70/00 101 \	1	1	5F157	H10P  70/00	662	ħʰŪʤΤϣ£¡դ۰̤ϣ£á	Characterised by cleaning (general cleaning: B08B; general application of chemical solutions: B05C)
H10P  70/00 102 \	2	2	5F157	H10P  70/00	28	˿Ҥ	Dipping in cleaning tanks
H10P  70/00 102 A	2	0	5F157	H10P  70/00	2275	ñ	Single tank
H10P  70/00 102 B	2	0	5F157	H10P  70/00	441	ʣ	Multiple tanks
H10P  70/00 102 C	2	1	5F157	H10P  70/00	69	֤դΰưΤ	with the movement of cleaning fluids between tanks
H10P  70/00 102 D	2	0	5F157	H10P  70/00	315	˴Ĥư	Moving substrates during washing
H10P  70/00 102 E	2	0	5F157	H10P  70/00	802	ĶȤѤ	Using ultrasonic waves
H10P  70/00 102 F	2	0	5F157	H10P  70/00	504	Υߤ	Equipped with nozzles
H10P  70/00 102 Z	2	0	5F157	H10P  70/00	274	¾㡥İʳ	Others, e.g., cleaning of items other than substrates
H10P  70/00 103 \	2	2	5F157	H10P  70/00	74	Υ롤ץ쥤Ѥ	Using nozzles and sprays
H10P  70/00 103 A	2	0	5F157	H10P  70/00	5594	Ĥž	Rotating substrates
H10P  70/00 103 B	2	0	5F157	H10P  70/00	737	Ĥư	Moving substrates
H10P  70/00 103 C	2	0	5F157	H10P  70/00	1965	Υ뼫ΤħΤ	Characterised  by nozzles themselves
H10P  70/00 103 D	2	1	5F157	H10P  70/00	756	ĶȤѤ	Using ultrasonic waves
H10P  70/00 103 Z	2	0	5F157	H10P  70/00	982	¾㡥γҤο᤭դİʳޤϥΥ	Others, e.g., particle spraying, washing other than substrates or nozzle washing
H10P  70/00 104 \	2	2	5F157	H10P  70/00	38	֤ˤ㡥֥饷ݥ	Scrub washing, e.g., brushing abnd sponging
H10P  70/00 104 A	2	0	5F157	H10P  70/00	290	Ĥž	Rotating substrates
H10P  70/00 104 B	2	1	5F157	H10P  70/00	509	ּʤư	Moving scrubbing means
H10P  70/00 104 C	2	1	5F157	H10P  70/00	955	ּʤž	Rotating scrubbing means
H10P  70/00 104 D	2	0	5F157	H10P  70/00	37	Ĥư	Moving substrates
H10P  70/00 104 E	2	1	5F157	H10P  70/00	288	ּʤž	Rotating scrubbing means
H10P  70/00 104 F	2	1	5F157	H10P  70/00	57	ּʤư	Moving scrubbing means
H10P  70/00 104 G	2	0	5F157	H10P  70/00	440	ּʼΤħΤ	Characterised by scrubbing means themselves
H10P  70/00 104 Z	2	0	5F157	H10P  70/00	440	¾㡥İʳޤϥ֥饷	Others, e.g. cleaning of components other than substrates, or cleaning of brushes
H10P  70/00 105 \	2	2	5F157	H10P  70/00	25	Ǥ	Cleaning in gas phase
H10P  70/00 105 A	2	0	5F157	H10P  70/00	497	ԳѤΡ㡥Σ򡤣ȣ	Using inert gases, e.g., N2, Ar, and He
H10P  70/00 105 B	2	0	5F157	H10P  70/00	583	Ѥ	Using vapours
H10P  70/00 105 C	2	0	5F157	H10P  70/00	1484	ץ饺ޤѤ	Using plasmas
H10P  70/00 105 D	2	0	5F157	H10P  70/00	955	糰Ѥ	Using ultraviolet radiation, etc.
H10P  70/00 105 Z	2	0	5F157	H10P  70/00	1050	¾㡥İʳ	Others, e.g., cleaning of components other than substrates
H10P  70/00 106 \	2	2	5F157	H10P  70/00	399	ŵѤΡŵν	Using static electricity; removal of static electricity
H10P  70/00 107 \	2	2	5F157	H10P  70/00	539	դħΤ	Characterised by processing liquids
H10P  70/00 107 A	2	0	5F157	H10P  70/00	2766	ͭ	Organic
H10P  70/00 107 B	2	0	5F157	H10P  70/00	768	̳ޤźä	Adding surface active agents
H10P  70/00 107 Z	2	0	5F157	H10P  70/00	3492	¾	Others
H10P  70/00 108 \	2	2	5F157	H10P  70/00	23	֤κޤ϶̻	Details or common features of devices
H10P  70/00 108 A	2	0	5F157	H10P  70/00	1671	ʡʴḤ̂ȣУ	Conveyance means (substrate conveyance in general: H10P72)
H10P  70/00 108 B	2	1	5F157	H10P  70/00	671	ʣƱ	Conveying multiple layers simultaneously
H10P  70/00 108 D	2	0	5F157	H10P  70/00	715	ƴΥꥢϤޤϼκ¤	Materials and structures of substrate containers (carriers) or jigs
H10P  70/00 108 E	2	0	5F157	H10P  70/00	216	ƴΥꥢϤ	Cleaning of substrate containers (carriers)
H10P  70/00 108 F	2	0	5F157	H10P  70/00	1321	դν۴ɲᡤե륿	Circulation filtration of cleaning fluids; filters
H10P  70/00 108 G	2	0	5F157	H10P  70/00	4164	桤Ĵ	Control, adjustment, and detection of cleaning
H10P  70/00 108 H	2	1	5F157	H10P  70/00	622	ʣˤ桤̤	Controls of multiple operations and overall process controls
H10P  70/00 108 J	2	0	5F157	H10P  70/00	192	֡Υ쥤ȡ	Arrangement (Layout)
H10P  70/00 108 K	2	0	5F157	H10P  70/00	2135	շϤζ̻ࡤ㡥۴ɡХ֡ݥ	Common components of liquid systems, e.g., piping, valves, and pumps
H10P  70/00 108 L	2	0	5F157	H10P  70/00	1127	Ϥζ̻ࡤ㡥ӵ	Common components of gas systems, e.g., exhaust and ventilation
H10P  70/00 108 Z	2	0	5F157	H10P  70/00	880	¾	Others
H10P  70/00 201 \	1	1	5F157	H10P  70/00	61	ȴΰϢ	Sequential processes of cleaning and drying; drying
H10P  70/00 201 A	1	0	5F157	H10P  70/00	180	Ĥž	Rotating substrates
H10P  70/00 201 B	1	1	5F157	H10P  70/00	2211	ռ	Sheet-type
H10P  70/00 201 C	1	1	5F157	H10P  70/00	76	Хå	Batch-type
H10P  70/00 201 D	1	2	5F157	H10P  70/00	114	žʿޤϿʿ鷹	Horizontal or tilted rotating shafts
H10P  70/00 201 E	1	2	5F157	H10P  70/00	76	žľޤϿľ鷹	Vertical or tilted rotating shafts
H10P  70/00 201 F	1	3	5F157	H10P  70/00	315	ʣĤΥꥢγ濴žʿԤ֤	Each central shaft of multiple carriers aligned parallel to the rotating shafts
H10P  70/00 201 G	1	0	5F157	H10P  70/00	667	ĤΰưβžϤȼ	with substrate movement (except rotation)
H10P  70/00 201 H	1	0	5F157	H10P  70/00	938	Ѥ	Using steam
H10P  70/00 201 J	1	0	5F157	H10P  70/00	522	ĤҤΡ㡥˿Ҥ	Dipping substrates, e.g., in warm pure water
H10P  70/00 201 K	1	0	5F157	H10P  70/00	369		Reducing pressure
H10P  70/00 201 L	1	0	5F157	H10P  70/00	1399	Τ᤭դΡʾο᤭դϣȡ	Spraying gases and blowing air (for spraying steam: H)
H10P  70/00 201 M	1	0	5F157	H10P  70/00	658	ҡˤĤľܲǮ	Directly heating substrates by heaters, light, etc.
H10P  70/00 201 N	1	0	5F157	H10P  70/00	534	Ķ׳Ѥ	Utilizing supercritical conditions
H10P  70/00 201 Z	1	0	5F157	H10P  70/00	819	¾㡥İʳδ	Others, e.g., drying of components other than substrates
H10P  72/00  \	0	0	5F131	H10P  72/00	3842	ϡĤޤ֤¤ޤϽˤ갷ޤݻΡΣ	Handling or holding of wafers, substrates or devices during manufacture or treatment thereof[2026.01]
H10P  72/00  E	0	0	5F131	H10P  72/00	1825	ڥåȡåפμ賰	Pellet and chip removal
H10P  72/00  L	0	0	5F131	H10P  72/00	911	Ϥ̵ͭɽ΢θ	Detection of wafer presence, wafer number,  facing up or down, and orientation
H10P  72/00  Z	0	0	5F131	H10P  72/00	137	¾Τ	Others
H10P  72/10  \	1	1	5F131	H10P  72/10	0	ѤΥꥢѤΡ㡥ηǼƴΣƣϣգСϡΣ	using carriers specially adapted therefor, e.g. front opening unified pods [FOUP][2026.01]
H10P  72/10  T	1	0	5F131	H10P  72/10	6087	ƴƴǼ뤿ΥȥåӥͥåȡҸ	Containers; stockers, cabinets and warehouses for accommodating the containers
H10P  72/10  U	1	1	5F131	H10P  72/10	1481	ʿ֤ΥڥåȡΤΤΡΥȥ쥤	for use with level pallets, wafers, etc.(trays)
H10P  72/10  Z	1	0	5F131	H10P  72/10	0	¾Τ	Others
H10P  72/30  \	1	1	5F131	H10P  72/30	0	ʡ㡥ۤʤִ֤ǤΣ	for conveying, e.g. between different workstations[2026.01]
H10P  72/30  A	1	0	5F131	H10P  72/30	21290	㡥ϰ񡤥ࡤϥɡܥåȡ֡߷סɥݡ	Conveyance, e.g., wafer conveyance equipment, arms, hands, robots, dollies, conveying designs and load ports
H10P  72/30  B	1	1	5F131	H10P  72/30	2696	Τε奢	Vacuum arms for conveyance
H10P  72/30  C	1	2	5F131	H10P  72/30	477	٥̡å	Bernoulli chuck
H10P  72/30  D	1	0	5F131	H10P  72/30	997	ʣϤΰܤΥꥢȥܡɴ֤ΰؤԥåѤΰء	Wafer batch transfer (transfer between carriers and boards; transfer for wafer arrangement pitch change)
H10P  72/30  Z	1	0	5F131	H10P  72/30	0	¾Τ	Others
H10P  72/50  \	1	1	5F131	H10P  72/50	0	ַᡤᡤޤϥ饤ȤΤΤΡΣ	for positioning, orientation or alignment[2026.01]
H10P  72/50  F	1	0	5F131	H10P  72/50	5120	ָС	Position detection and control
H10P  72/50  G	1	0	5F131	H10P  72/50	2476	ַᡦ	Positioning and alignment
H10P  72/50  K	1	0	5F131	H10P  72/50	3406	桤㡥ươ֥롤ַ᥹ơΰư	Transfer of mounting tables, e.g., micromotion tables and positioning stages
H10P  72/50  M	1	0	5F131	H10P  72/50	1035	ե顦ΥåѤ	Utilising an orientation flat and a notch
H10P  72/50  Z	1	0	5F131	H10P  72/50	0	¾Τ	Others
H10P  72/70  \	1	1	5F131	H10P  72/70	14832	ٻޤĻΤΤΡΣ	for supporting or gripping[2026.01]
H10P  72/72  \	2	2	5F131	H10P  72/72	6297	ťåѤΡΣ	using electrostatic chucks[2026.01]
H10P  72/76  \	2	2	5F131	H10P  72/76	822	ŪʤѤΡ㡥פޤϥԥΣ	using mechanical means, e.g. clamps or pinches[2026.01]
H10P  72/78  \	2	2	5F131	H10P  72/78	3375	鰵۰ѤΡ㡥٥̡åΣ	using vacuum or suction, e.g. Bernoulli chucks[2026.01]
H10P  74/00  \	0	0	4M106	H10P  74/00	905	ϡĤޤ֤¤ޤϽλޤ¬Σ	Testing or measuring during manufacture or treatment of wafers, substrates or devices[2026.01]
H10P  74/00  A	0	0	4M106	H10P  74/00	1793	ǻҤμ̡㡥ޡ󥰡ޥå	Identification of defective elements, e.g., marking and mapping
H10P  74/00  B	0	0	4M106	H10P  74/00	10428	ܿ¬֡㡥ץ	Contact-type testing and measuring arrangements, e.g., probers
H10P  74/00  C	0	0	4M106	H10P  74/00	2076	ܿ¬֡㡥ӣţ	Non-contact-type testing and measuring arrangements, e.g., SEM
H10P  74/00  D	0	0	4M106	H10P  74/00	1961	¬Ѽ	Jigs for testing and measuring
H10P  74/00  E	0	0	4M106	H10P  74/00	2198	¬ŶˡüҤǤäȾƳ֤ߤ	Electrodes and terminals for testing and measuring installed in semiconductor devices
H10P  74/00  F	0	0	4M106	H10P  74/00	2874	¬ѲϩǤäȾƳ֤˷	Circuits for testing and measuring formed in semiconductor devices
H10P  74/00  G	0	0	4M106	H10P  74/00	1703	ȥϥɥ	Auto bandlers
H10P  74/00  H	0	0	4M106	H10P  74/00	2516	Ƽﲼ㡥ⲹⰵǤλ¬	Testing and measuring under various conditions, e.g., high temperature, high pressure, and radiation
H10P  74/00  Z	0	0	4M106	H10P  74/00	4654	¾Τ	Others
H10P  74/00 101 \	1	1	4M106	H10P  74/00	0	¬оݤħ	Characterised by objects used for testing and measuring
H10P  74/00 101 U	1	0	4M106	H10P  74/00	138	Хݡȥ󥸥	Bipolar transistors
H10P  74/00 101 V	1	0	4M106	H10P  74/00	644	ƣţԡͣϣӹ¤	FET and MOS structures
H10P  74/00 101 W	1	0	4M106	H10P  74/00	610		Memory
H10P  74/00 101 X	1	0	4M106	H10P  74/00	814	ȯǻҡǻ	Light-emitting diode (LED) and light sensors (or photodetectors)
H10P  74/00 101 Y	1	0	4M106	H10P  74/00	1811	åǻ	Particles for checking
H10P  74/00 101 Z	1	0	4M106	H10P  74/00	0	¾Τ	Others
H10P  74/20  \	1	1	4M106	H10P  74/20	0	롤ޤ¬ꤵħΤΡ㡥¤ŪޤŵŪΣ	characterised by the properties tested or measured, e.g. structural or electrical properties[2026.01]
H10P  74/20  J	1	0	4M106	H10P  74/20	11560	ѡѥ	Appearances and patterns
H10P  74/20  K	1	1	4M106	H10P  74/20	380	ԥۡ롤å	Pinholes, cracks, warps, etc.
H10P  74/20  L	1	0	4M106	H10P  74/20	2306	ȾƳδġǻҤʪ	Material properties of semiconductor substrate elements
H10P  74/20  M	1	1	4M106	H10P  74/20	390	ꥢ̿	Carrier lifespan
H10P  74/20  N	1	1	4M106	H10P  74/20	2285	֡㡥ʻҡåԥåȡ̴ѻ	Internal states, e.g., compositions, lattices, etch pits, cross-sectional observations, etc.
H10P  74/20  P	1	0	4M106	H10P  74/20	1828	ߡ̳֡	Thickness, position, cutting plane angle, etc.
H10P  74/20  Q	1	0	4M106	H10P  74/20	817	졤ʬΥܹ	Oxide films, separation, joining, etc.
H10P  74/20  R	1	0	4M106	H10P  74/20	919	ܥǥ󥰾֡߾	Bonding conditions and sealing conditions
H10P  74/20  S	1	0	4M106	H10P  74/20	842	û	Disconnection and short circuit of wiring section, etc.
H10P  74/20  T	1	0	4M106	H10P  74/20	765	ȾƳ֤β١ȯ	Temperature and coloration state of semiconductor devices
H10P  74/20  Z	1	0	4M106	H10P  74/20	0	¾Τ	Others
H10P  76/00  \	0	0	5F146	H10P  76/00	7317	ȾƳξΥޥ¤ޤϽ㡥꥽եޤϥեȥ꥽եˤΡΣ	Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography[2026.01]
H10P  76/00 541 \	1	1	5F056	H10P  76/00	289	ŻϪ	Electron beam exposure
H10P  76/00 541 A	1	0	5F056	H10P  76/00	242	ŻҸط	Electron optical systems
H10P  76/00 541 B	1	1	5F056	H10P  76/00	1767	Żҽơѡ㡤֥󥭥Ŷˡ«и	Electron guns, apertures, blanking electrodes, and converging optics
H10P  76/00 541 C	1	0	5F056	H10P  76/00	192		Control systems
H10P  76/00 541 J	1	1	5F056	H10P  76/00	1701	ˡˤΡ	Drawing methods (by scan control)
H10P  76/00 541 M	1	1	5F056	H10P  76/00	1151	ˡʾȼ̡ȼͷˤΡ	Drawing methods (by controlling beam dose and irradiation shape)
H10P  76/00 541 D	1	1	5F056	H10P  76/00	1294	ӡξȼͰ֤	Control of beam irradiation position
H10P  76/00 541 E	1	1	5F056	H10P  76/00	759	ӡξȼ̡ȼͷ	Control of beam dose and irradiation shape
H10P  76/00 541 V	1	0	5F056	H10P  76/00	117	Ĵ	Adjustment systems
H10P  76/00 541 F	1	1	5F056	H10P  76/00	245	Ĵˡ	Focus adjustment methods
H10P  76/00 541 H	1	1	5F056	H10P  76/00	155	Ĵˡ	Shaft adjustment methods
H10P  76/00 541 U	1	0	5F056	H10P  76/00	248	¬	Measuring systems
H10P  76/00 541 N	1	1	5F056	H10P  76/00	352	ӡ°¬	Measurement of beam attributes
H10P  76/00 541 K	1	1	5F056	H10P  76/00	1012	ֹ碌ޡΰ֤¬	Measurement of alignment mark positions
H10P  76/00 541 G	1	0	5F056	H10P  76/00	316	η	Mirror systems
H10P  76/00 541 L	1	1	5F056	H10P  76/00	1476	桤å	Sample room, sample stands, and sample transport cassettes
H10P  76/00 541 P	1	0	5F056	H10P  76/00	1028	ν	Sample processing
H10P  76/00 541 Q	1	0	5F056	H10P  76/00	878	ӡѤŻϪ	Electron beam exposure using variable shaped beams
H10P  76/00 541 R	1	0	5F056	H10P  76/00	218	ӡѤŻϪ	Electron beam exposure using fixed shaped beams
H10P  76/00 541 S	1	0	5F056	H10P  76/00	1500	ѥޥѤŻϪ	Electron beam exposure using pattern masks
H10P  76/00 541 T	1	0	5F056	H10P  76/00	208	եȡɤѤŻϪ	Electron beam exposure using photocathodes
H10P  76/00 541 W	1	0	5F056	H10P  76/00	938	ʣΥӡѤŻϪ	Electron beam exposure using multiple beams
H10P  76/00 541 Z	1	0	5F056	H10P  76/00	423	¾Τ	Others
H10P  76/00 551 \	1	1	5F056	H10P  76/00	475	Ϫ	Ion beam exposure
H10P  76/00 561 \	1	1	5F146	H10P  76/00	145	쥸ν	Resist film processing
H10P  76/00 562 \	2	2	5F146	H10P  76/00	1921	Ūʤ	General
H10P  76/00 563 \	2	2	5F146	H10P  76/00	1103	쥸۰ν쥸嶯	Processing before resist application and resist adhesion enhancement films
H10P  76/00 564 \	2	2	5F146	H10P  76/00	490	쥸	Resist application
H10P  76/00 564 C	2	0	5F146	H10P  76/00	3928	ž	Spin coating equipment
H10P  76/00 564 D	2	0	5F146	H10P  76/00	1019	žˡ	Spin coating methods
H10P  76/00 564 Z	2	0	5F146	H10P  76/00	2131	¾	Other coating equipment
H10P  76/00 565 \	2	2	5F146	H10P  76/00	660	쥸۰ʸ塤Ϫνʥ١󥰤	Processing after resist application and before exposure (excluding baking)
H10P  76/00 566 \	3	3	5F146	H10P  76/00	753	١󥰰ϥץ١	General baking or prebaking
H10P  76/00 567 \	3	3	5F146	H10P  76/00	2063	١֡ʴ	Baking devices (drying)
H10P  76/00 568 \	2	2	5F146	H10P  76/00	874	Ϫʸ塤νʥեȽŹ	Processing after exposure and before development (graft polymerization)
H10P  76/00 569 \	2	2	5F146	H10P  76/00	123		Developing and rinsing
H10P  76/00 569 A	2	0	5F146	H10P  76/00	399		The wet process
H10P  76/00 569 B	2	1	5F146	H10P  76/00	260	ʿҡ	Development tanks (for dipping)
H10P  76/00 569 C	2	1	5F146	H10P  76/00	2143	ž	Spin processing
H10P  76/00 569 D	2	1	5F146	H10P  76/00	501	ȼʤ	With conveyance
H10P  76/00 569 E	2	1	5F146	H10P  76/00	991	ա󥹱	Developing solutions and rinsing solutions
H10P  76/00 569 F	2	1	5F146	H10P  76/00	1232	ˡ	Developing methods
H10P  76/00 569 G	2	1	5F146	H10P  76/00	110	θ	Detection of the end point of development
H10P  76/00 569 H	2	0	5F146	H10P  76/00	454		The dry process
H10P  76/00 569 Z	2	0	5F146	H10P  76/00	557	¾Τ	Others
H10P  76/00 570 \	2	2	5F146	H10P  76/00	1887	ʸνʥ١󥰤	Processing after development (excluding baking)
H10P  76/00 571 \	3	3	5F146	H10P  76/00	501	ݥȥ١󥰡Ǯܻ糰	Post-baking (heat + ultraviolet light)
H10P  76/00 572 \	3	3	5F146	H10P  76/00	80	쥸Υ	Resist film removal
H10P  76/00 572 A	3	0	5F146	H10P  76/00	1465		The dry process
H10P  76/00 572 B	3	0	5F146	H10P  76/00	2981		The wet process
H10P  76/00 572 Z	3	0	5F146	H10P  76/00	173	¾Τ	Others
H10P  76/00 573 \	2	2	5F146	H10P  76/00	2287	¿إ쥸	Multilayer resist films
H10P  76/00 574 \	2	2	5F146	H10P  76/00	1845	ȿɻ졤ȿʵۼ	Antireflection coatings and reflective coatings (absorption coatings)
H10P  76/00 575 \	2	2	5F146	H10P  76/00	750	쥸Ȥݸɽ	Resist protective coatings (surface films)
H10P  76/00 576 \	2	2	5F146	H10P  76/00	453	쥸ȥѥΥСϥ󥰡з	Resist pattern overhang and inclined shape
H10P  76/00 577 \	2	2	5F146	H10P  76/00	1029	ϼΥ쥸Ƚ	Resist removal at the wafer perimeter
H10P  76/00 578 \	2	2	5F146	H10P  76/00	433	ʿóʥץʥꥼ	Flattening (planariasation)
H10P  76/00 579 \	2	2	5F146	H10P  76/00	107	륳Ѥ	Using chalcogen
H10P  76/00 600 \	1	1	5F146	H10P  76/00	5480	ץ	Imprint
H10P  76/00 700 \	1	1	5F146	H10P  76/00	1337	¾Υѥˡ	Other patterning methods
H10P  76/20  \	1	1	5F146	H10P  76/20	0	ͭʤޥΣ	of masks comprising organic materials[2026.01]
H10P  76/40  \	1	1	5F146	H10P  76/40	0	̵ʤޥΣ	of masks comprising inorganic materials[2026.01]
H10P  90/00  \	0	0	5F116	H10P  90/00	0	Υ֥饹ñΥᥤ󥰥롼פޤʤϤ¤㡥Ϥ䶯Σ	Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement[2026.01]
H10P  90/00  A	0	0	5F116	H10P  90/00	0	Ĺ¤Τħ	Characterised by substrate structures themselves
H10P  90/00  B	0	0	5F116	H10P  90/00	0	Ž碌Υ缡Ԥ	with sequential lamination and stripping
H10P  90/00  C	0	0	5F116	H10P  90/00	0	ޡȥåȡϿɸˤѤ	Utilizing Smart-Cut(R)
H10P  90/00  P	0	0	5F116	H10P  90/00	0	ȣФΣİʾΥᥤ󥰥롼פħΤΡʡ¡äͥ	Characterised by two or more main groups in H10P, with @B and C taking precedence
H10P  90/00  Y	0	0	5F116	H10P  90/00	0	ȣФΣĤΥᥤ󥰥롼פħΤΡθ§Ϳʤ	Characterised by one or more main groups in H10P (not assigned by principle)
H10P  90/00  Z	0	0	5F116	H10P  90/00	0	¾	Others
H10P  95/00  \	0	0	5F117	H10P  95/00	0	Υ֥饹¾Υ롼פޤʤ¤ޤϽΤΰŪˡޤ֡Σ	Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass[2026.01]
H10P  95/00 101 \	1	1	5F117	H10P  95/00	0	ץߥ졼	Process simulation itself
H10P  95/00 102 \	1	1	5F117	H10P  95/00	0	桨	Control; production management; process management
H10P  95/00 102 A	1	0	5F117	H10P  95/00	0	եȥ㡥ץࡤħ	Characterised by software, e.g., control programmes
H10P  95/00 102 B	1	1	5F117	H10P  95/00	0	ħ	Characterised by production management and process management
H10P  95/00 102 C	1	2	5F117	H10P  95/00	0	쥷Ԥħ	Characterised by the recipes
H10P  95/00 102 D	1	0	5F117	H10P  95/00	0	ϡɥ㡥֡ħ	Characterised by hardware, e.g., conveying devices
H10P  95/00 102 E	1	0	5F117	H10P  95/00	0	ؽѤ	Using machine learning
H10P  95/00 102 Z	1	0	5F117	H10P  95/00	0	¾Τ	Others
H10P  95/00 201 \	1	1	5F117	H10P  95/00	0	¾ȾƳ¤Ѥ֤ޤ	Other devices or components used in semiconductor manufacturing
H10P  95/00 201 D	1	0	5F117	H10P  95/00	0	꡼٥ɥե	Clean benches, fume hoods, etc.
H10P  95/00 201 Z	1	0	5F117	H10P  95/00	0	¾Τ	Others
H10P  95/40  \	1	1	5F054	H10P  95/40	0	ѹȾƳΤν㡥˷٤ΡΣ	Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections[2026.01]
H10P  95/40  K	1	0	5F054	H10P  95/40	448	饤ե७顼ɡԥ	Lifetime killer doping
H10P  95/40  L	1	0	5F054	H10P  95/40	437	⥨ͥ륮ӡˤ饤եॳȥ	Lifetime control using high energy beams
H10P  95/40  Z	1	0	5F054	H10P  95/40	215	¾Τ	Others
H10P  95/60  \	1	1	5F057	H10P  95/60	0	Ū㡥ĶȤˤΡΣ	Mechanical treatments, e.g. by ultrasounds[2026.01]
H10P  95/60  S	1	0	5F057	H10P  95/60	309	ɥ֥饹ȤޤϱΤʮդˤ	By sand blasting or liquid spraying
H10P  95/60  M	1	0	5F057	H10P  95/60	72	ޥɤν	Mound removal
H10P  95/60  B	1	0	5F057	H10P  95/60	904	Ĥ̼ꡤ᥵٥٥롤٤	Substrate chamfering, mesa, beveling, and slotting
H10P  95/60  Z	1	0	5F057	H10P  95/60	942	¾Τ	Others
H10P  95/70  \	1	1	5F004	H10P  95/70	0	ŪΣ	Chemical treatments[2026.01]
H10P  95/80  \	1	1	5F054	H10P  95/80	263	ŵŪ㡥쥯ȥեߥ󥰤ΤΤΡΣ	Electrical treatments, e.g. for electroforming[2026.01]
H10P  95/90  \	1	1	5F054	H10P  95/90	0	Ǯ㡥ˡ󥰤ޤϥ󥿥󥰡Σ	Thermal treatments, e.g. annealing or sintering[2026.01]
H10P  95/90 101 \	2	2	5F054	H10P  95/90	389	ȾƳΤѤ뤿Ǯ㡥ˡ󥰡󥿥󥰡ϣȣУå󥰤ϣȣУͥ	Thermal treatment for modifying the properties of semiconductor bodies, e.g., annealing and sintering (for film formation, H10P14 takes precedence and for etching, H10P50 does)
H10P  95/90 101 C	2	0	5F054	H10P  95/90	637	²ʪȾƳΤ˴ؤΡʷ뾽ĹΥˡϣȣУκݤΥˡϣȣУͥ	Related to Semiconductor compounds from groups 3 to 5 (for annealing during crystal growth, H10P14/20 takes precedence and for annealing during ion injection, H10P30/28 does)
H10P  95/90 101 X	2	0	5F054	H10P  95/90	913	ȾƳΤβ㡥ٽʷ뾽ĹΥˡϣȣУκݤΥˡϣȣУͥ	Semiconductor modification, e.g., defect removal (for annealing during crystal growth, H10P14/20 takes precedence and for annealing during ion implantation, H10P30/28 does)
H10P  95/90 101 N	2	0	5F054	H10P  95/90	72	Ǯˤ롤Уܹη	P-N junction formation through heat treatment
H10P  95/90 101 G	2	0	5F054	H10P  95/90	582	ˡ	Annealing devices
H10P  95/90 101 J	2	1	5F054	H10P  95/90	803	Ǯʥפޤϣ̣ţĤϣȣУŻϣȣУ졼ϣȣУͥ	Heating section (for lamps or LEDs, H10P34/00 takes precedence; for electron beams, H10P34/40 does, and for lasers, H10P34/42 does)
H10P  95/90 101 Q	2	1	5F054	H10P  95/90	812	ϻٻ㡥ܡȡץơ	Wafer support jigs, e.g., boats, susceptors, and stages
H10P  95/90 101 R	2	1	5F054	H10P  95/90	565	Ƴӽзϩή	Gas introduction/exhaust path and gas flow
H10P  95/90 101 S	2	1	5F054	H10P  95/90	365	Ϥʡͽޤ	Wafer conveyance means (including spare rooms)
H10P  95/90 101 W	2	0	5F054	H10P  95/90	316	δĤͽǮѡ	Pre-treatment and post-treatment (preheating and precooling of substrates)
H10P  95/90 101 T	2	0	5F054	H10P  95/90	561	¬ꡤ	Measurement and control
H10P  95/90 101 P	2	0	5F054	H10P  95/90	240	ץ饺ޡˡ	Plasma annealing
H10P  95/90 101 Z	2	0	5F054	H10P  95/90	613	¾Τ	Others
H10P  95/90 102 \	2	2	5F054	H10P  95/90	0	ȾƳΤѤʤǮ㡥񹳲Ǯߥåҡ	Thermal treatment not modifying the properties of semiconductor bodies, e.g., resistive heating ceramic heaters
