C30B   1/00		꤫ľñ뾽ĹʶϾʪΰϽУã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth directly from the solid state(unidirectional demixing of eutectoid materials <b>C30B3/00</b>; under a protective fluid <b>C30B27/00</b>)	588
C30B   1/02		ǮˤΡ㡥ľߡʣã£ͥˡΣ	by thermal treatment, e.g. strain annealing(<b>C30B1/12</b> takes precedence)	1443
C30B   1/04		Ʒ뾽Σ	Isothermal recrystallisation	173
C30B   1/06		ٸ۲ǤκƷ뾽Σ	Recrystallisation under a temperature gradient	103
C30B   1/08		Ʒ뾽Σ	Zone recrystallisation	174
C30B   1/10		ȿޤ¿ȻˤΡΣ	by solid state reactions or multi-phase diffusion	1070
C30B   1/12		ĹΰϽˤΡΣ	by pressure treatment during the growth	336
C30B   3/00		ϾʪΰϽСΣ	Unidirectional demixing of eutectoid materials	50
C30B   5/00		뤫ñ뾽ĹݸήβǹԤΣã£ˡΣ	Single-crystal growth from gels(under a protective fluid <b>C30B27/00</b>)	308
C30B   5/02		ɡʪäΡΣ	with addition of doping materials	26
C30B   7/00		ﲹǱΤޤѤϱդñ뾽Ĺ㡥ϱաͻޤΤΣã£Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΣã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions(from molten solvents <b>C30B9/00</b>; by normal or gradient freezing <b>C30B11/00</b>; under a protective fluid <b>C30B27/00</b>)	1769
C30B   7/02		ޤξȯˤΡΣ	by evaporation of the solvent	234
C30B   7/04		ޤѤΡΣ	using aqueous solvents	279
C30B   7/06		ޤѤΡΣ	using non-aqueous solvents	334
C30B   7/08		ϱդѤˤΡΣ	by cooling of the solution	604
C30B   7/10		ϤäΡ㡥ǮˡΣ	by application of pressure, e.g. hydrothermal processes	1975
C30B   7/12		ŲˤΡΣ	by electrolysis	170
C30B   7/14		뾽ʪϱβȿˤΡΣ	the crystallising materials being formed by chemical reactions in the solution	2138
C30B   9/00		ͻޤѤͻդñ뾽ĹʥΡޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΤϣã£ƥ󥰤ˤΣã£뾽ФˤΣã£Ҥ줿뾽ĹΣã£ꥨԥĹˤΣã£ݸήβǹԤΣã£ˡΣ	Single-crystal growth from melt solutions using molten solvents(by normal or gradient freezing <b>C30B11/00</b>; by zone-melting <b>C30B13/00</b>; by crystal pulling <b>C30B15/00</b>; on immersed seed crystal <b>C30B17/00</b>; by liquid phase epitaxial growth <b>C30B19/00</b>; under a protective fluid <b>C30B27/00</b>)	996
C30B   9/02		ͻޤξȯˤΡΣ	by evaporation of the molten solvent	58
C30B   9/04		ϱդѤˤΡΣ	by cooling of the solution	162
C30B   9/06		ޤȤƷ뾽ΰʬѤΡΣ	using as solvent a component of the crystal composition	294
C30B   9/08		¾ޤѤΡΣ	using other solvents	58
C30B   9/10		°ޡΣ	Metal solvents	307
C30B   9/12		ޡ㡥եåĹΣ	Salt solvents, e.g. flux growth	952
C30B   9/14		ŲˤΡΣ	by electrolysis	56
C30B  11/00		Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤñ뾽Ĺ㡥֥åޥ󡽥ȥåСˡʣã£ã£ã£ã£ͥ表ݸήβǹԤΣã£ˡΣ	Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method(<b>C30B13/00</b>, <b>C30B15/00</b>, <b>C30B17/00</b>, <b>C30B19/00</b> take precedence; under a protective fluid <b>C30B27/00</b>)	7414
C30B  11/02		ޤѤʤΡʣã£ͥˡΣ	without using solvents(<b>C30B11/06</b> takes precedence)	708
C30B  11/04		ͻ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the melt	359
C30B  11/06		뾽ʬǤϤʤʤȤ⣱ĤʬäΡΣ	at least one but not all components of the crystal composition being added	347
C30B  11/08		뾽˷뾽ƤʬäΡΣ	every component of the crystal composition being added during the crystallisation	128
C30B  11/10		Τޤϱʬ㡥٥̡ˡΣ	Solid or liquid components, e.g. Verneuil method	431
C30B  11/12		ʬ㡥꡽꡽Ĺʣ֣̣ӡˡΣ	Vaporous components, e.g. vapour-liquid-solid-growth	266
C30B  11/14		뾽ˤäħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. its crystallographic orientation	695
C30B  13/00		ƥ󥰤ˤñ뾽Ĺƥ󥰤ˤʣã£ͥ表줿ΤѤѲΣã£ݸήβǹԤʤΣã£깽¤ͭѼ¿뾽ʪĹΤΤΣã£ˡΣ	Single-crystal growth by zone-melting; Refining by zone-melting(<b>C30B17/00</b> takes precedence; by changing the cross-section of the treated solid <b>C30B15/00</b>; under a protective fluid <b>C30B27/00</b>; for the growth of homogeneous polycrystalline material with defined structure <b>C30B28/00</b>)	1955
C30B  13/02		ޤѤ륾ƥ󥰡㡥ưˡΣ	Zone-melting with a solvent, e.g. travelling solvent process	235
C30B  13/04		٥󥰤ˤѼΣ	Homogenisation by zone-levelling	52
C30B  13/06		ͻ̤ˤ錄äƹʤΡΣ	the molten zone not extending over the whole cross-section	211
C30B  13/08		ͻ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the molten zone	124
C30B  13/10		ɡʪäΡΣ	with addition of doping materials	191
C30B  13/12		ޤϾ֤ǡΣ	in the gaseous or vapour state	126
C30B  13/14		ĤܤޤƴΣ	Crucibles or vessels	294
C30B  13/16		ͻβǮΣ	Heating of the molten zone	334
C30B  13/18		ǮǻҤͻܿޤϿҤΡΣ	the heating element being in contact with, or immersed in, the molten zone	89
C30B  13/20		ͶƳˤΡ㡥ۥåȥ磻䵻ѡʣã£ͥˡΣ	by induction, e.g. hot wire technique(<b>C30B13/18</b> takes precedence)	569
C30B  13/22		ȼͤޤŵŤˤΡΣ	by irradiation or electric discharge	318
C30B  13/24		żȤѤΡΣ	using electromagnetic waves	529
C30B  13/26		ͻ¡Σ	Stirring of the molten zone	89
C30B  13/28		ޤĴΣ	Controlling or regulating	598
C30B  13/30		ͻΰ경ޤϷ桤㡥󥻥ȥ쥤ˤΡżˤΡ뾽̤Σ	Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal	346
C30B  13/32		ޤϥҡΰưΣ	Mechanisms for moving either the charge or the heater	288
C30B  13/34		뾽ˤäħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. by its crystallographic orientation	157
C30B  15/00		ͻդΰФˤñ뾽Ĺ㡥祯륹ˡݸήβǹԤΣã£ˡΣ	Single-crystal growth by pulling from a melt, e.g. Czochralski method(under a protective fluid <b>C30B27/00</b>)	10959
C30B  15/02		ͻդ˷뾽ʪޤϤ򤽤ξȿޤźäΡΣ	adding crystallising materials or reactants forming it <u>in situ</u> to the melt	2059
C30B  15/04		ɡʪäΡ㡥УܹѡΣ	adding doping materials, e.g. for n&ndash;p-junction	1378
C30B  15/06		ľФΣ	Non-vertical pulling	170
C30B  15/08		ФΣ	Downward pulling	309
C30B  15/10		ͻդٻ뤿ΤĤܤޤƴΣ	Crucibles or containers for supporting the melt	3863
C30B  15/12		ŤĤˡΣ	Double crucible methods	615
C30B  15/14		ͻդޤϷ뾽ʪβǮΣ	Heating of the melt or the crystallised materials	3280
C30B  15/16		ȼͤޤŵŤˤΡΣ	by irradiation or electric discharge	179
C30B  15/18		ľ񹳲Ǯ˲ä¾βǮˡѤΡ㡥ڥǮѤΡΣ	using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat	121
C30B  15/20		ޤĴޤĴ̣ǣˡΣ	Controlling or regulating(controlling or regulating in general <b>G05</b>)	4487
C30B  15/22		Ф줿뾽˵ͻΰ경ޤϷ桨뾽̤Σ	Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal	1203
C30B  15/24		ŪʤѤΡ㡥ɡʱ춡뾽ĹΣţƣǡѤã£ˡΣ	using mechanical means, e.g. shaping guides(shaping dies for edge-defined film-fed crystal growth <b>C30B15/34</b>)	319
C30B  15/26		ƥӥ󸡽дѤΡޤϣдѤΡΣ	using television detectors; using photo or X-ray detectors	781
C30B  15/28		뾽ޤͻդνѲѤΡ㡥եơˡΣ	using weight changes of the crystal or the melt, e.g. flotation methods	411
C30B  15/30		ͻդޤϷ뾽žޤϰư뤿εʥեơˡã£ˡΣ	Mechanisms for rotating or moving either the melt or the crystal(flotation methods <b>C30B15/28</b>)	1859
C30B  15/32		뾽ݻ㡥åΣ	Seed holders, e.g. chucks	893
C30B  15/34		ޤϥåȤѤ춡뾽ĹʣţƣǡˡΣ	Edge-defined film-fed crystal growth using dies or slits	967
C30B  15/36		뾽ˤħŤ줿Ρ㡥η뾽̡Σ	characterised by the seed, e.g. its crystallographic orientation	723
C30B  17/00		Ĺͻդ˿뾽ؤñ뾽Ĺ㡥ʥå󡽥ݥˡʣã£ͥˡΣ	Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method(<b>C30B15/00</b> takes precedence)	1153
C30B  19/00		ꥨԥĹΣ	Liquid-phase epitaxial-layer growth	1790
C30B  19/02		ͻޤѤΡ㡥եåΣ	using molten solvents, e.g. flux	738
C30B  19/04		ޤ뾽ΰʬǤΡΣ	the solvent being a component of the crystal composition	668
C30B  19/06		ȿͻջٻѥܡȡݻΡΣ	Reaction chambers; Boats for supporting the melt; Substrate holders	1728
C30B  19/08		ȿޤϴĤβǮΣ	Heating of the reaction chamber or the substrate	211
C30B  19/10		ޤĴޤĴ̣ǣˡΣ	Controlling or regulating(controlling or regulating in general <b>G05</b>)	514
C30B  19/12		ĤˤäħŤ줿ΡΣ	characterised by the substrate	799
C30B  21/00		ʪΰǲΣ	Unidirectional solidification of eutectic materials	56
C30B  21/02		̾¤ޤϲٸ۶ŸǤˤΡΣ	by normal casting or gradient freezing	499
C30B  21/04		ƥ󥰤ˤΡΣ	by zone-melting	138
C30B  21/06		ͻդΰФˤΡΣ	by pulling from a melt	209
C30B  23/00		ȯޤϾڤʪζŸǤˤñ뾽ĹΣ	Single-crystal growth by condensing evaporated or sublimed materials	4087
C30B  23/02		ԥĹΣ	Epitaxial-layer growth	3651
C30B  23/04		ѥ졤㡥ޥѤΡΣ	Pattern deposit, e.g. by using masks	198
C30B  23/06		켼ĤޤȯʪβǮΣ	Heating of the deposition chamber, the substrate, or the materials to be evaporated	1452
C30B  23/08		󲽾ζŽ̤ˤΡȿѥå󥰤ˤΣã£ˡΣ	by condensing ionised vapours(by reactive sputtering <b>C30B25/06</b>)	2457
C30B  25/00		ȿβȿˤñ뾽Ĺ㡥ؾʣã֣ġˤˤĹΣ	Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth	3054
C30B  25/02		ԥĹΣ	Epitaxial-layer growth	6704
C30B  25/04		ѥ졤㡥ޥѤΡΣ	Pattern deposit, e.g. by using masks	696
C30B  25/06		ȿѥå󥰤ˤΡΣ	by reactive sputtering	348
C30B  25/08		ȿΤκΣ	Reaction chambers; Selection of materials therefor	1608
C30B  25/10		ȿޤϴĤβǮΣ	Heating of the reaction chamber or the substrate	2444
C30B  25/12		ݻΤޤϥץΣ	Substrate holders or susceptors	2891
C30B  25/14		ζ뤪ӽмʡȿήĴΣ	Feed and outlet means for the gases; Modifying the flow of the reactive gases	4514
C30B  25/16		ޤĴޤĴ̣ǣˡΣ	Controlling or regulating(controlling or regulating in general <b>G05</b>)	2765
C30B  25/18		ĤˤäħŤ줿ΡΣ	characterised by the substrate	4665
C30B  25/20		ĤԥؤƱʪǤΡΣ	the substrate being of the same materials as the epitaxial layer	1505
C30B  25/22		ɥåץΣ	Sandwich processes	158
C30B  27/00		ݸήβˤñ뾽ĹΣ	Single-crystal growth under a protective fluid	413
C30B  27/02		ͻդΰФˤΡΣ	by pulling from a melt	1947
C30B  28/00		깽¤ͭѼ¿뾽ʪ¤Σ	Production of homogeneous polycrystalline material with defined structure	208
C30B  28/02		꤫ľܤˡΣ	directly from the solid state	609
C30B  28/04		ΤΣ	from liquids	538
C30B  28/06		Ρޥ롦ե꡼󥰤ޤϲٸ۶ŸǤˤΡΣ	by normal freezing or freezing under temperature gradient	3353
C30B  28/08		ƥ󥰤ˤΡΣ	by zone-melting	194
C30B  28/10		ͻդΰФˤΡΣ	by pulling from a melt	481
C30B  28/12		꤫ľܤˡΣ	directly from the gas state	694
C30B  28/14		ȿβȿˤΡΣ	by chemical reaction of reactive gases	1113
C30B  29/00		ޤϷˤäħŤ줿ñ뾽ޤ깽¤ͭѼ¿뾽ʪΣ<br><br><b><ul></ul></b><br>ʣ˥롼ףã£ã£ˤƤϡ饹ȥץ쥤ͥ롼뤬ŬѤ롤ʤƳإ٥ˤȿؼʤ¤ꡤʪϺǸŬڤʲսʬह롣<br>ʣˣɣУäɤǤβظǼɽ򻲾ȤƤ뤫򼨤äΥȥ³ʣˤդ뤳ȡΥ롼פѤ륷ƥϡɽˤƥ޿ɽ줿ĤΥ롼פʤ륷ƥǤ롣	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape	318
C30B  29/02		ǡΣ	Elements	1624
C30B  29/04		ɡΣ	Diamond	4819
C30B  29/06		ꥳΣ	Silicon	21924
C30B  29/08		ޥ˥Σ	Germanium	541
C30B  29/10		̵ʪޤʪΣ	Inorganic compounds or compositions	1430
C30B  29/12		ϥʪΣ	Halides	1984
C30B  29/14		Σ	Phosphates	476
C30B  29/16		ʪΣ	Oxides	3187
C30B  29/18		бѡΣ	Quartz	532
C30B  29/20		ߥ˥Σ	Aluminium oxides	3063
C30B  29/22		ʣʪΣ	Complex oxides	5359
C30B  29/24		ͣϢͭΡǣϴ°ޤϣͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣ졤㡥륽ե饤ȡΣ	with formula AMeO<sub>3</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites	307
C30B  29/26		£ͣ墭ϢͭΡǣ¤ϣͣ硤Σ顤ã졤ڣޤϣãޤͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣΣ	with formula BMe<sub>2</sub>O<sub>4</sub>, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al	445
C30B  29/28		ͣ墭ϢͭΡǣϴ°ޤͣϣƣ塤ǣᡤӣ㡤ã򡤣ãޤϣ졤㡥ͥåȡΣ	with formula A<sub>3</sub>Me<sub>5</sub>O<sub>12</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets	1691
C30B  29/30		˥ֻХʥ󥿥Σ	Niobates; Vanadates; Tantalates	1941
C30B  29/32		ޥ˥֥ǥ󥰥ƥΣ	Titanates; Germanates; Molybdates; Tungstates	1455
C30B  29/34		Σ	Silicates	752
C30B  29/36		úʪΣ	Carbides	7634
C30B  29/38		ⲽʪΣ	Nitrides	5154
C30B  29/40		ɣɣɣ£ֲʪΣ	A<sub>III</sub>B<sub>V</sub> compounds	6885
C30B  29/42		ҲꥦΣ	Gallium arsenide	1717
C30B  29/44		󲽥ꥦΣ	Gallium phosphide	227
C30B  29/46		βޤϥƥޤಽʪΣ	Sulfur-, selenium- or tellurium-containing compounds	2449
C30B  29/48		ɣɣ£֣ɲʪΣ	A<sub>II</sub>B<sub>VI</sub> compounds	1488
C30B  29/50		βɥߥΣ	Cadmium sulfide	76
C30B  29/52		Σ	Alloys	1768
C30B  29/54		ͭʪΣ	Organic compounds	1588
C30B  29/56		лΣ	Tartrates	21
C30B  29/58		ʬҲʪΣ	Macromolecular compounds	640
C30B  29/60		ˤħŤ줿ΡΣ	characterised by shape	1369
C30B  29/62		Ҥ뾽ޤϿ˾뾽Σ	Whiskers or needles	3273
C30B  29/64		ʿ뾽㡥ġӾΤޤϱġΣ	Flat crystals, e.g. plates, strips or discs	1006
C30B  29/66		ʣʴŪη뾽㡥ɡΣ	Crystals of complex geometrical shape, e.g. tubes, cylinders	611
C30B  29/68		ع¤ʤ뾽㡥ĶʻҡɡΣ	Crystals with laminate structure, e.g. "superlattices"	702
C30B  30/00		ž졤졤ưͥ륮ޤϤ¾üʪŪκѤˤħŤñ뾽ޤ깽¤ͭѼ¿뾽ʪ¤Σ<br><br><b><ul></ul></b><br>Υ롼פʬह硤뾽Ĺι˽롼ףˤʬह롣Σ	Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions; <br><br><b><u>Note(s)</u></b><br><br><ul><li>When classifying in this group, classification is also made in groups <b>C30B1/00 to C30B28/00</b>  according to the process of crystal growth. </li></ul>	394
C30B  30/02		žѤΡ㡥ŵʬΣ	using electric fields, e.g. electrolysis	407
C30B  30/04		ѤΡΣ	using magnetic fields	756
C30B  30/06		ŪưѤΡΣ	using mechanical vibrations	92
C30B  30/08		̵ϤޤϤξﲼΤΡΣ	in conditions of zero-gravity or low gravity	206
C30B  31/00		ñ뾽ޤ깽¤ͭѼ¿뾽ʪؤγȻޤϥɡֹΤ֡Σ	Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor	411
C30B  31/02		֤γȻʪܿΡΣ	by contacting with diffusion materials in the solid state	519
C30B  31/04		֤γȻʪܿΡΣ	by contacting with diffusion materials in the liquid state	333
C30B  31/06		֤γȻʪܿΡΣ	by contacting with diffusion material in the gaseous state	702
C30B  31/08		ȻʪȻǤβʪǤΡΣ	the diffusion materials being a compound of the elements to be diffused	136
C30B  31/10		ȿΤκΣ	Reaction chambers; Selection of materials therefor	530
C30B  31/12		ȿβǮΣ	Heating of the reaction chamber	301
C30B  31/14		ݻΤޤϥץΣ	Substrate holders or susceptors	383
C30B  31/16		ζ뤪ӽмʡήĴΣ	Feed and outlet means for the gases; Modifying the flow of the gases	780
C30B  31/18		ޤĴΣ	Controlling or regulating	263
C30B  31/20		żȾȼͤޤγͤˤɡӥ󥰡Σ	Doping by irradiation with electromagnetic waves or by particle radiation	207
C30B  31/22		ˤΡΣ	by ion-implantation	552
C30B  33/00		ñ뾽ޤ깽¤ͭѼ¿뾽ʪθʣã£ͥˡΣ	After-treatment of single crystals or homogeneous polycrystalline material with defined structure(<b>C30B31/00</b> takes precedence)	4809
C30B  33/02		Ǯʣã£ã£ͥˡΣ	Heat treatment(<b>C30B33/04</b>, <b>C30B33/06</b> take precedence)	4223
C30B  33/04		ž졤ޤγͤѤΡΣ	using electric or magnetic fields or particle radiation	789
C30B  33/06		뾽ηΣ	Joining of crystals	1008
C30B  33/08		å󥰡Σ	Etching	588
C30B  33/10		ϱդޤͻǡΣ	in solutions or melts	2400
C30B  33/12		ʷϵޤϥץ饺޲ǡΣ	in gas atmosphere or plasma	672
C30B  35/00		ñ뾽ޤ깽¤ͭѼ¿뾽ʪĹ¤ޤϸΤäŬ礷¾ʬवʤ֡Σ	Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure	6464
