H01S   1/00		᡼ʤޥΰǤżͤͶƳФѤ֡Σ	Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range	938
H01S   1/02		ΡΣ	solid	1249
H01S   1/04		ΡΣ	liquid	32
H01S   1/06		Σ	gaseous	751
H01S   3/00		졼ʤֳĻޤϻ糰ΰǤżͤͶƳФѤ֡ȾƳΥ졼ȣӣˡΣ	Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range(semiconductors lasers <b>H01S5/00</b>)	18717
H01S   3/02		¤ŪʺΣ	Constructional details	6292
H01S   3/03		졼ŴɡΣ	of gas laser discharge tubes	5151
H01S   3/032		Ť¤ΤΤΡ㡥żɤħˤΡΣ	for confinement of the discharge, e.g. by special features of the discharge constricting tube	692
H01S   3/034		ɤΡޤϴɤΰ֡㡥롤ʶĴ뤿Τޤϰ֤ͭȿͶȣӣˡΣ	Optical devices within, or forming part of, the tube, e.g. windows, mirrors(reflectors having variable properties or positions for initial adjustment of the resonator <b>H01S3/086</b>)	1954
H01S   3/036		ɤ˾ޤϤޤϰݻ뤿μʡ㡥ανޤ佼۴Ĥ뤿μʡ㡥ɤΰϤˤ뤿ΤΡΣ	Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering or replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube	2764
H01S   3/038		Ŷˡ㡥̤ηŪ֤ޤϹ¤Σ	Electrodes, e.g. special shape, configuration or composition	3188
H01S   3/04		ǮŪʴ򤹤뤿֡Σ	Arrangements for thermal management	6124
H01S   3/041		졼ΤΤΡΣ	for gas lasers	1837
H01S   3/042		Υ졼ΤΤΡΣ	for solid state lasers	4130
H01S   3/05		Ūʶι¤ޤϷ޼Ĵ޼ηΣ	Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium	917
H01S   3/06		޼ι¤ޤϷΣ	Construction or shape of active medium	8167
H01S   3/063		Ƴϩ졼㡥졼Σ	Waveguide lasers, e.g. laser amplifiers	1162
H01S   3/067		եз졼Σ	Fibre lasers	15446
H01S   3/07		ʣʬΡ㡥ȡʣȣӣͥˡΣ	consisting of a plurality of parts, e.g. segments(<b>H01S3/067</b> takes precedence)	2353
H01S   3/08		ŪʶޤϤιǤι¤ޤϷΣ	Construction or shape of optical resonators or components thereof	10743
H01S   3/08018		⡼Σ	Mode suppression	73
H01S   3/08022		ĥ⡼ɡʣĤζѤ⡼ȣӣˡΣ	Longitudinal modes(mode suppression using a plurality of resonators <b>H01S3/082</b>)	117
H01S   3/08031		ñ⡼͡Σ	Single-mode emission	88
H01S   3/08036		ʬǻҡиǻҤޤʣǻҤѤΡΣ	using intracavity dispersive, polarising or birefringent elements	59
H01S   3/0804		⡼ɤޤϲ⡼ɡΣ	Transverse or lateral modes	35
H01S   3/08045		ñ⡼͡Σ	Single-mode emission	24
H01S   3/0805		ˤΡ㡥ԥۡޤϥʥեåΣ	by apertures, e.g. pin-holes or knife-edges	12
H01S   3/081		İʾȿͶʤΡΣ	comprising three or more reflectors	2317
H01S   3/082		ʣĤζħդΡ㡥⡼ɤޤ뤿ΤΡΣ	defining a plurality of resonators, e.g. for mode selection or suppression	986
H01S   3/083		󥰥졼Σ	Ring lasers	2372
H01S   3/086		Ĵ뤿Τޤϰ֤ͭ룱İʾȿͶưΥ졼ϤΥѥ᡼ѲΣȣӣ졼ϤΰȣӣˡΣ	One or more reflectors having variable properties or positions for initial adjustment of the resonator(varying a parameter of the laser output during operation <b>H01S3/10</b>; stabilisation of the laser output <b>H01S3/13</b>)	1104
H01S   3/09		嵯ˡޤϤ֡㡥ݥԥ󥰡Σ	Processes or apparatus for excitation, e.g. pumping	2054
H01S   3/091		Ūݥԥ󥰤ѤΡΣ	using optical pumping	2426
H01S   3/0915		󥳥ҡȸˤΡΣ	by incoherent light	842
H01S   3/092		եåפΤΡʣȣӣͥˡΣ	of flash lamp(<b>H01S3/0937</b> takes precedence)	1110
H01S   3/093		嵯ͥ륮޼˽ޤϸΡΣ	focusing or directing the excitation energy into the active medium	919
H01S   3/0933		ȾƳΤΤΡ㡥ȯɡΣ	of a semiconductor, e.g. light emitting diode	519
H01S   3/0937		ȯʪޤϲǳʪˤΡΣ	produced by exploding or combustible material	39
H01S   3/094		ҡȸˤΡΣ	by coherent light	7540
H01S   3/0941		ȾƳΥ졼Ρ㡥졼ɤΡΣ	of a semiconductor laser, e.g. of a laser diode	5402
H01S   3/0943		졼ΤΡΣ	of a gas laser	158
H01S   3/0947		ͭǥ졼ΤΡΣ	of an organic dye laser	99
H01S   3/095		ؤޤǮݥԥ󥰤ѤΡΣ	using chemical or thermal pumping	425
H01S   3/0951		졼޼ΰäˤΡΣ	by increasing the pressure in the laser gas medium	8
H01S   3/0953		ʥߥå졼ʤ졼޼ıĶ®ή®ãΡΣ	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds	242
H01S   3/0955		⥨ͥ륮γҤˤݥԥ󥰤ѤΡΣ	using pumping by high energy particles	35
H01S   3/0957		⥨ͥ륮ҳγҤˤΡΣ	by high energy nuclear particles	15
H01S   3/0959		ŻҥӡˤΡΣ	by an electron beam	167
H01S   3/097		졼ΥŤˤΡΣ	by gas discharge of a gas laser	4417
H01S   3/0971		ڤä嵯ΡʣȣӣͥˡΣ	transversely excited(<b>H01S3/0975</b> takes precedence)	847
H01S   3/0973		޼̲᤹ʹȤͭΡΣ	having a travelling wave passing through the active medium	140
H01S   3/0975		ͶƳޤ嵯ѤΡΣ	using inductive or capacitive excitation	824
H01S   3/0977		ΥʤͭΡΣ	having auxiliary ionisation means	523
H01S   3/0979		ʥߥå졼ʤ졼޼ıĶ®ή®ãΡΣ	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds	171
H01S   3/10		Ф줿ζ١ȿꡤиޤ桤㡥å󥰡ȡĴޤĴΣ	Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating	17904
H01S   3/101		졼а֤ޤѤʤ졼Σ	Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted	2922
H01S   3/102		޼椹뤳ȤˤΡ㡥嵯ˡޤ嵯֤椹뤳ȤˤΡʣȣӣͥˡΣ	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation(<b>H01S3/13</b> takes precedence)	1793
H01S   3/104		졼ˤΡΣ	in gas lasers	700
H01S   3/105		ȿͶа֤ޤȿ椹뤳ȤˤΡʣȣӣͥˡΣ	by controlling the mutual position or the reflecting properties of the reflectors of the cavity(<b>H01S3/13</b> takes precedence)	1402
H01S   3/1055		޳ʻҤˤäƹƤȿͶΣĤ椹ΡΣ	one of the reflectors being constituted by a diffraction grating	715
H01S   3/106		֤줿ǻҤˤΡʣȣӣͥˡΣ	by controlling devices placed within the cavity (<b>H01S3/13</b> takes precedence)	2306
H01S   3/107		ŵǻҤѤΡ㡥ݥå륹̤ޤϥ̤򼨤ΡΣ	using electro-optic devices, e.g. exhibiting Pockels or Kerr effect	759
H01S   3/108		ǻҤѤΡ㡥֥奢ޤϥޥ򼨤ΡΣ	using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering	2701
H01S   3/109		ȿܡ㡥ĴȤȯΣ	Frequency multiplication, e.g. harmonic generation	4387
H01S   3/11		⡼ɥå󥰡ѥå󥰡¾Υ㥤ȥѥ륹ѡ㡥ӥƥԥ󥰡Σ	Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping	3418
H01S   3/1106		⡼ɥå󥰡Σ	Mode locking	262
H01S   3/1109		ǽư⡼ƱΣ	Active mode locking	87
H01S   3/1112		ư⡼ƱΣ	Passive mode locking	101
H01S   3/1115		β˰µۼΤѤΡΣ	using intracavity saturable absorbers	140
H01S   3/1118		ȾƳβ˰µۼΡ㡥ȾƳβ˰µۼΥߥ顼Σӣţӣͣϡβ˰µۼΡΣãΣԡϡ㡥ܥʥΥ塼֡ΣãΣԡϤ˴ŤΡΣ	Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based	284
H01S   3/1123		ѥå󥰡Σ	Q-switching	195
H01S   3/113		β˰µۼΤѤΡΣ	using intracavity saturable absorbers	692
H01S   3/115		ŵǻҤѤΡΣ	using intracavity electro-optic devices	1096
H01S   3/117		βǻҤѤΡΣ	using intracavity acousto-optic devices	928
H01S   3/121		εŪ֤ѤΡΣ	using intracavity mechanical devices	213
H01S   3/123		žѤΡΣ	using rotating mirrors	107
H01S   3/125		žץꥺѤΡΣ	using rotating prisms	79
H01S   3/127		ʣΣѥåѤΡΣ	Plural Q-switches	185
H01S   3/13		졼ϥѥ᡼㡥ȿޤϿΰΣ	Stabilisation of laser output parameters, e.g. frequency or amplitude	5155
H01S   3/131		޼椹뤳ȤˤΡ㡥嵯ˡޤ嵯֤椹뤳ȤˤΡΣ	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation	1880
H01S   3/134		졼ˤΡΣ	in gas lasers	1321
H01S   3/136		֤줿֤椹뤳ȤˤΡΣ	by controlling devices placed within the cavity	509
H01S   3/137		ȿ경뤿ΤΡΣ	for stabilising of frequency	1149
H01S   3/139		ȿͶа֤ޤȿ椹뤳ȤˤΡΣ	by controlling the mutual position or the reflecting properties of the reflectors of the cavity	1239
H01S   3/14		޼ȤƻѤʪħΤΡΣ	characterised by the material used as the active medium	447
H01S   3/16		ʪΣ	Solid materials	7455
H01S   3/17		󾽼㡥饹Σ	amorphous, e.g. glass	1545
H01S   3/20		ΡΣ	Liquids	509
H01S   3/207		졼ȤޤΡΣ	including a chelate	44
H01S   3/213		ͭǤޤΡΣ	including an organic dye	678
H01S   3/22		Σ	Gases	1585
H01S   3/223		¿ҡʤİʾθҤޤΡʣȣӣͥˡΣ	the active gas being polyatomic, i.e. containing two or more atoms (<b>H01S3/227</b> takes precedence)	1182
H01S   3/225		ޤޤϥץåʤΡΣ	comprising an excimer or exciplex	1363
H01S   3/227		°Σ	Metal vapour	294
H01S   3/23		ȣӣʬवʤİʾΥ졼㡥ʬΥ줿޼ľȾƳΥ졼ΤߤޤΣȣӣˡΣ	Arrangement of two or more lasers not provided for in groups <b>H01S3/02 to H01S3/14</b> , e.g. tandem arrangement of separate active media(involving only semiconductor lasers <b>H01S5/40</b>)	5261
H01S   3/30		̡㡥ͶƳ֥奢̤ޤϥޥ̡ѤΡΣ	using scattering effects, e.g. stimulated Brillouin or Raman effects	3720
H01S   4/00		롼ףȣӣȣӣޤϣȣӣޤΤȤϰۤʤäΰǤżͤͶƳФѤ֡㡥եΥ᡼졼ޤϥ졼Σ	Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups <b>H01S1/00</b>, <b>H01S3/00</b> or <b>H01S5/00</b>, e.g. phonon masers, X-ray lasers or gamma-ray lasers	1216
H01S   5/00		ȾƳΥ졼ʥѡߥͥåȥɣȣȣˡΣ<br><br><b><ul></ul></b><br>ɣУäɤǤβظǼɽ򻲾ȤƤ뤫򼨤äΥȥ³ʣˤդ뤳ȡΥ롼פѤ륷ƥϡɽˤƥ޿ɽ줿ĤΥ롼פʤ륷ƥǤ롣Σ	Semiconductor lasers (superluminescent diodes <b>H10H20/00</b>);<br><br><b><u>Note(s)</u></b><br><br><ul><li>Attention is drawn to Note (3) after the title of section <b>C</b>, which Note indicates to which version of the Periodic Table of chemical elements the IPC refers. In this group, the system used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder.</li></ul>	35856
H01S   5/02		졼ѤˤȤäܼŪǤϤʤ¤ŪʺޤϹΣ	Structural details or components not essential to laser action	6044
H01S   5/022		ޥȡϥ󥰡Σ	Mountings; Housings	14507
H01S   5/02208		ϥ󥰤ηħΡΣ	characterised by the shape of the housings	557
H01S   5/02212		ãη㡥оμ˱äƤޤʿԤ˽мͤԣϡݣãΥϥ󥰡Σ	Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis	396
H01S   5/02216		Хե饤㡥ϥ󥰤ʿ˱ӤƤŶ˥ԥͭΡΣ	Butterfly-type, i.e. with electrode pins extending horizontally from the housings	178
H01S   5/02218		ϥ󥰤κϥ󥰤νŶʪΣ	Material of the housings; Filling of the housings	254
H01S   5/0222		ΤŶ줿ϥ󥰡Σ	Gas-filled housings	74
H01S   5/02224		Ǥޤ൤Ρ㡤м̤αɻߤ뤿Σ	the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets	19
H01S   5/02232		ΤŶ줿ϥ󥰡Σ	Liquid-filled housings	3
H01S   5/02234		餬Ŷ줿ϥ󥰡Υϥ󥰡Σ	Resin-filled housings; the housings being made of resin	82
H01S   5/02235		ۼ뤿ΥåΣ	Getter material for absorbing contamination	12
H01S   5/0225		Ϸ礹ΡΣ	Out-coupling of light	712
H01S   5/02251		եФѤΡΣ	using optical fibres	634
H01S   5/02253		󥺤ѤΡΣ	using lenses	1332
H01S   5/02255		ӡиǤѤΡΣ	using beam deflecting elements	708
H01S   5/02257		ѤΡ㡥ϥθд˸ơȿͤ뤿ˡäŬΡΣ	using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing	353
H01S   5/023		ޥࡤ㡥֥ޥΣ	Mount members, e.g. sub-mount members	920
H01S   5/0231		ƥΣ	Stems	130
H01S   5/02315		ٻࡤ㡥١ꥢΣ	Support members, e.g. bases or carriers	1551
H01S   5/0232		꡼ɥե졼Σ	Lead-frames	478
H01S   5/02325		ޥޤϸإޥ٥ξ˵Ū˽Ѥ줿ǡΣ	Mechanically integrated components on mount members or optical micro-benches	373
H01S   5/02326		졼ɤȸǤа֤Ĵ֡㡥եФޤϥ󥺤ꤹ뤿ΥޥȤι¡Σ	Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses	434
H01S   5/0233		졼åפμդιΣ	Mounting configuration of laser chips	623
H01S   5/02335		åץɥåץޥȡ㡥Ĺ̤¦ˤޥȡϡܹ֤¦ˤޥȡΣ	Up-side up mountings, e.g. epi-side up mountings or junction up mountings	95
H01S   5/0234		åץɥޥȡ㡥եåסåסĹ̤¦ˤޥȡܹ֤¦ˤޥȡΣ	Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings	237
H01S   5/02345		磻ܥǥ󥰡Σ	Wire-bonding	809
H01S   5/0235		졼åפμˡΣ	Method for mounting laser chips	253
H01S   5/02355		ޥȤؤΥ졼åפθΣ	Fixing laser chips on mounts	230
H01S   5/0236		ޤѤΡΣ	using an adhesive	123
H01S   5/02365		դˤΡΣ	by clamping	89
H01S   5/0237		ϥդˤΡΣ	by soldering	444
H01S   5/02375		졼åפΰַΣ	Positioning of the laser chips	254
H01S   5/0238		ޡѤΡΣ	using marks	82
H01S   5/02385		졼ե󥹤ȤѤΡΣ	using laser light as reference	29
H01S   5/0239		ŵŪޤϸŪǻҤȹ礻Σ	Combinations of electrical or optical elements	1143
H01S   5/024		ǮŪʴ򤹤뤿֡Σ	Arrangements for thermal management	8503
H01S   5/026		Υꥷå˽Ѥ줿ʣι㡥Ƴȴɡ˥ѥեȥǥƥޤ϶ưǻҡʽϤΰ경ȣӣˡΣ	Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers(stabilisation of output <b>H01S5/06</b>)	8695
H01S   5/028		ƥ󥰡Σ	Coatings	2769
H01S   5/04		嵯ˡޤϤ֡㡥ݥԥ󥰡ʣȣӣͥˡΣ	Processes or apparatus for excitation, e.g. pumping(<b>H01S5/06</b> takes precedence)	1085
H01S   5/042		ŵŪ嵯Σ	Electrical excitation	13718
H01S   5/06		졼ϥѥ᡼桤㡥޼椹뤳ȤˤΡΣ	Arrangements for controlling the laser output parameters, e.g. by operating on the active medium	5922
H01S   5/062		Ŷˤ˰äŰѤ뤳ȤˤΡʣȣӣͥˡΣ	by varying the potential of the electrodes(<b>H01S5/065</b> takes precedence)	3204
H01S   5/0625		¿ʬ졼ˤΡΣ	in multi-section lasers	1335
H01S   5/065		⡼ɥå󥰡⡼⡼Σ	Mode locking; Mode suppression; Mode selection	2111
H01S   5/068		졼ϥѥ᡼ΰ경ʣȣӣͥˡΣ	Stabilisation of laser output parameters(<b>H01S5/0625</b> takes precedence)	4708
H01S   5/0683		Ūʽϥѥ᡼˥뤳ȤˤΡΣ	by monitoring the optical output parameters	3656
H01S   5/0687		졼μȿ경ΡΣ	Stabilising the frequency of the laser	2172
H01S   5/10		ι¤ޤϷΣ	Construction or shape of the optical resonator	5181
H01S   5/11		եȥ˥åХɥå׹¤ޤΡΣ	Comprising a photonic bandgap structure	451
H01S   5/12		¤ͭ붦㡥ʬ۵Է졼Σģƣ¥졼ϤˤΡʥեȥ˥åХɥå׹¤ޤΣȣӣɽз졼ȣӣˡΣ	the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure <b>H01S5/11</b>;  surface-emitting lasers <b>H01S5/18</b>)	4488
H01S   5/125		ʬȿͷ졼Σģ£ҥ졼ϡΣ	Distributed Bragg reflector [DBR] lasers	1974
H01S   5/14		﷿졼ʣȣӣͥ表⡼ɥå󥰣ȣӣˡΣ	External cavity lasers(<b>H01S5/18</b> takes precedence; mode locking <b>H01S5/065</b>)	3974
H01S   5/16		빽¤졼ʤΰȿ̤Ȥδ֤ۼʤΰĤΡʣȣӣͥˡΣ	Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface(<b>H01S5/14</b> takes precedence)	980
H01S   5/18		ɽзΣӣšϥ졼㡥ʿȿľξͭΡΣ	Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities	1114
H01S   5/183		ľΤߤͭΡ㡥ľ﷿ȯ졼Σ֣ãӣţ̡ϡΣ	having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]	8618
H01S   5/185		ʿΤߤͭΡ㡥ʿ﷿ȯ졼Σȣãӣţ̡ϡʥեȥ˥åХɥå׹¤ޤΣȣӣˡΣ	having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure <b>H01S5/11</b>)	335
H01S   5/187		֥åȿͤѤΡΣ	using Bragg reflection	1224
H01S   5/20		ȾƳΤθƳȤ빽¤ޤϷΣ	Structure or shape of the semiconductor body to guide the optical wave	4344
H01S   5/22		åޤϥȥ饤׹¤ͭΡΣ	having a ridge or a stripe structure	5500
H01S   5/223		ߥȥ饤׹¤ΤΡʣȣӣͥˡΣ	Buried stripe structure(<b>H01S5/227</b> takes precedence)	2472
H01S   5/227		ߥ᥵¤ΤΡΣ	Buried mesa structure	2540
H01S   5/24		¤ͭΡ㡥ֹ·Σ	having a grooved structure, e.g. V-grooved	508
H01S   5/30		ΰι¤ޤϷΰѤΣ	Structure or shape of the active region; Materials used for the active region	3857
H01S   5/32		Уܹ礫ʤΡ㡥إƥޤϥ֥إƥ¤ʣȣӣȣӣͥˡΣ	comprising PN junctions, e.g. hetero- or double- hetero-structures(<b>H01S5/34</b>, <b>H01S5/36</b> take precedence)	2311
H01S   5/323		ɢɢɣ¢²ʪˤΡ㡥ǣ졼Σ	in A<sub>III</sub>B<sub>V</sub> compounds, e.g. AlGaAs-laser	6843
H01S   5/327		ɢɣ¢֢²ʪˤΡ㡥ڣãӣ졼Σ	in A<sub>II</sub>B<sub>VI</sub> compounds, e.g. ZnCdSe-laser	380
H01S   5/34		̻ҰͤޤĶʻҹ¤ޤΡ㡥ñ̻ҰͷΣӣѣסϥ졼¿̻ҰͷΣͣѣסϥ졼жΨʬΥĤإƥ¤ΣǣңɣΣӣãȡϥ졼ʣȣӣͥˡΣ	comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers(<b>H01S5/36</b> takes precedence)	3948
H01S   5/343		ɢɢɣ¢²ʪˤΡ㡥ǣ졼Σ	in A<sub>III</sub>B<sub>V</sub> compounds, e.g. AlGaAs-laser	8922
H01S   5/347		ɢɣ¢֢²ʪˤΡ㡥ڣãӣ졼Σ	in A<sub>II</sub>B<sub>VI</sub> compounds, e.g. ZnCdSe-laser	252
H01S   5/36		ͭʤΡΣ	comprising organic materials	351
H01S   5/40		ȣӣȣӣʬवʤİʾȾƳΥ졼ʣȣӣͥˡΣ	Arrangement of two or more semiconductor lasers, not provided for in groups <b>H01S5/02 to H01S5/30</b> (<b>H01S5/50</b> takes precedence)	8669
H01S   5/42		ɽз졼Σ	Arrays of surface emitting lasers	2621
H01S   5/50		ȣӣȣӣʬवʤι¤Σ	Amplifier structures not provided for in groups <b>H01S5/02 to H01S5/30</b> 	2431
