H10D   1/00		񹳴ѥޤϥΣ<br><br><b><ul></ul></b><br>Υ롼פϰʲޤ롣<br>Ű̾ɤͭ롤ġ̵񹳴ޤ̵ѥ<br>Ű̾ɤͭ¾ȾƳιʤȤνѤäŬġ񹳴ѥޤϥΣ	Resistors, capacitors or inductors; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u>:<ul><li>individual inorganic resistors or capacitors having potential barriers;</li><li>individual resistors, capacitors or inductors having no potential barriers, and specially adapted for integration with other semiconductor components.</li></ul></li></ul>	240
H10D   1/20		Σ	Inductors	349
H10D   1/40		񹳴Σ	Resistors	25
H10D   1/43		Уܹͭ񹳴Σ	Resistors having PN junctions	12
H10D   1/47		Ű̾ɤͭʤ񹳴Σ	Resistors having no potential barriers	155
H10D   1/60		ѥΣ	Capacitors	66
H10D   1/62		Ű̾ɤͭ륭ѥΣ	Capacitors having potential barriers	74
H10D   1/64		̥ɡ㡥Х饯Σ	Variable-capacitance diodes, e.g. varactors	16
H10D   1/66		ƳΡΡȾƳι¤Υѥ㡥ͣϣӥѥΣ	Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors	106
H10D   1/68		Ű̾ɤͭʤѥΣ	Capacitors having no potential barriers	868
H10D   8/00		ɡʲ̥ɣȣģȥɣȣģˡΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Diodes (variable-capacitance diodes <b>H10D1/64</b>;  gated diodes <b>H10D12/00</b>);<br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	475
H10D   8/01		¤ޤϽΣ	Manufacture or treatment	731
H10D   8/20		֥졼ɡ㡥Х󥷥ɡΣ	Breakdown diodes, e.g. avalanche diodes	47
H10D   8/25		ĥʡɡΣ	Zener diodes	58
H10D   8/30		ܿɡΣ	Point-contact diodes	1
H10D   8/40		ȥ󥸥åȥɡ㡥ɣͣУԣԥɤޤϣԣңУԣԥɡΣ	Transit-time diodes, e.g. IMPATT or TRAPATT diodes	3
H10D   8/50		УɣΥɡΣ	PIN diodes	461
H10D   8/60		åȥХꥢɡΣ	Schottky-barrier diodes	694
H10D   8/70		ȥ̥ͥɡΣ	Tunnel-effect diodes	20
H10D   8/75		ȥ̣ͥУΥɡ㡥ɡΣ	Tunnel-effect PN diodes, e.g. Esaki diodes	8
H10D   8/80		УΣУΥɡ㡥å졼ɤޤϥ֥졼СɡΣ	PNPN diodes, e.g. Shockley diodes or break-over diodes	14
H10D  10/00		Хݡȥ󥸥Σ£ʣԡϡΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Bipolar junction transistors [BJT]; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	64
H10D  10/01		¤ޤϽΣ	Manufacture or treatment	151
H10D  10/40		ķХݡȥ󥸥Σ	Vertical BJTs	75
H10D  10/60		Хݡȥ󥸥Σ	Lateral BJTs	50
H10D  10/80		إƥܹХݡȥ󥸥Σ	Heterojunction BJTs	105
H10D  12/00		ų̤ˤ椵Хݡ֡㡥沈ȥХݡȥ󥸥Σɣǣ£ԡϡΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	1388
H10D  12/01		¤ޤϽΣ	Manufacture or treatment	609
H10D  18/00		ꥹΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Thyristors; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	117
H10D  18/01		¤ޤϽΣ	Manufacture or treatment	83
H10D  18/40		ų̤ˤ꥿󥪥󤹤ΡΣ	with turn-on by field effect	8
H10D  18/60		ȥ󥪥եꥹΣ	Gate-turn-off devices	17
H10D  18/65		ų̤ˤ꥿󥪥դΡΣ	with turn-off by field effect	26
H10D  18/80		ꥹ㡥ȥ饤åΣ	Bidirectional devices, e.g. triacs	33
H10D  30/00		ų̥ȥ󥸥Σƣţԡϡ沈ȥХݡȥ󥸥ȣģˡΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Field-effect transistors [FET](insulated-gate bipolar transistors <b>H10D12/00</b>);<br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	300
H10D  30/01		¤ޤϽΣ	Manufacture or treatment	7405
H10D  30/40		ޤϣꥢͥͭų̥ȥ󥸥Σ	FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels	35
H10D  30/43		ꥢͥĤΡ㡥̻Һų̥ȥ󥸥ޤϣ̻Ĥͥͭȥ󥸥Σ	having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels	343
H10D  30/47		ꥢͥĤΡ㡥ʥΥܥų̥ȥ󥸥ޤϹŻҰư٥ȥ󥸥ΣȣţͣԡϡΣ	having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]	1892
H10D  30/60		沈ų̥ȥ󥸥ΣɣǣƣţԡϡʣȣģͥˡΣ	Insulated-gate field-effect transistors [IGFET](<b>H10D30/40</b> takes precedence)	2963
H10D  30/62		եų̥ȥ󥸥ΣƣƣţԡϡΣ	Fin field-effect transistors [FinFET]	1240
H10D  30/63		ķ沈ų̥ȥ󥸥ʣȣģͥˡΣ	Vertical IGFETs(<b>H10D30/66</b> takes precedence)	550
H10D  30/64		ųȻ°ʪΣģͣϣӡų̥ȥ󥸥Σ	Double-diffused metal-oxide semiconductor [DMOS] FETs	24
H10D  30/65		ģͣϣӡΣ̣ģͣϣӡų̥ȥ󥸥Σ	Lateral DMOS [LDMOS] FETs	539
H10D  30/66		ķģͣϣӡΣ֣ģͣϣӡų̥ȥ󥸥Σ	Vertical DMOS [VDMOS] FETs	2225
H10D  30/67		ȥ󥸥ΣԣƣԡϡΣ	Thin-film transistors [TFT]	4117
H10D  30/68		եƥ󥰥Ȥͭ沈ų̥ȥ󥸥Σ	Floating-gate IGFETs	536
H10D  30/69		Ų٥ȥåԥ󥰥Τͭ沈ų̥ȥ󥸥㡥ͣΣϣӥȥ󥸥Σ	IGFETs having charge trapping gate insulators, e.g. MNOS transistors	713
H10D  30/80		ήܹ祲Ŷˤͭų̥ȥ󥸥ʣȣģͥˡΣ	FETs having rectifying junction gate electrodes(<b>H10D30/40</b> takes precedence)	55
H10D  30/83		Уܹ祲Ŷˤͭų̥ȥ󥸥Σ	FETs having PN junction gate electrodes	201
H10D  30/87		åȥŶˤͭų̥ȥ󥸥㡥°ȾƳų̥ȥ󥸥ΣͣţӣƣţԡϡΣ	FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]	208
H10D  44/00		Ųž֡Σ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Charge transfer devices; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	9
H10D  44/01		¤ޤϽΣ	Manufacture or treatment	3
H10D  44/40		Ųٷ֡ΣããġϡΣ	Charge-coupled devices [CCD]	
H10D  44/45		沈Ŷˤˤų̤ĤΡΣ	having field effect produced by insulated gate electrodes	7
H10D  48/00		롼ףȣģȣģޤʤġ֡Σ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Individual devices not covered by groups <b>H10D1/00 to H10D44/00</b> ; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	1115
H10D  48/01		¤ޤϽΣ	Manufacture or treatment	46
H10D  48/04		礷Ƥʤ֤Υޤϥƥ뤫ʤΤ֤ͭΤΡΣ	of devices having bodies comprising selenium or tellurium in uncombined form	1
H10D  48/042		ĤνΣ	Preparation of foundation plates	10
H10D  48/043		ޤϥƥĤؤŬѡޤ³ƤηΣ	Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination	
H10D  48/044		ޤϥƥƳž֤ؤѴΣ	Conversion of the selenium or tellurium to the conductive state	1
H10D  48/045		ƳˤΥޤϥƥؤɽ̽Σ	Treatment of the surface of the selenium or tellurium layer after having been made conductive	
H10D  48/046		ʬΥؤηΣ	Provision of discrete insulating layers	1
H10D  48/047		ĤŬѤΥޤϥƥϪ̤ؤŶˤηΣ	Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates	1
H10D  48/048		֤ν㡥ɷΤΥ쥯ȥեߥ󥰤ˤΡΣ	Treatment of the complete device, e.g. by electroforming to form a barrier	1
H10D  48/049		󥰡Σ	Ageing	1
H10D  48/07		ƼΣãϡϤޤϥ襦ƼΣãϤʤΤ֤ͭΤΡΣ	of devices having bodies comprising cuprous oxide [Cu<sub>2</sub>O] or cuprous iodide [CuI]	3
H10D  48/30		ήޤŰˤ椵֡Σ	Devices controlled by electric currents or voltages	27
H10D  48/32		ήޤϥåήήʤŶˤͿήޤṲ̋Τߤˤ椵֡Σ	Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched	13
H10D  48/34		Хݡ֡Σ	Bipolar devices	13
H10D  48/36		˥ݡ֡Σ	Unipolar devices	35
H10D  48/38		ήȯޤϥåήήİʾŶˤͿήޤṲ̋ѲΤߤˤ椵֡Σ	Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched	15
H10D  48/40		ˤ椵֡Σ	Devices controlled by magnetic fields	102
H10D  48/50		Ūϡ㡥ϡˤ椵֡Σ	Devices controlled by mechanical forces, e.g. pressure	55
H10D  62/00		Ű̾ɤ֤ͭȾƳΡޤϤΰΣ	Semiconductor bodies, or regions thereof, of devices having potential barriers	340
H10D  62/10		ȾƳΤΰηŪ礭ޤ֡ȾƳΤηΣ	Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies	6227
H10D  62/13		ήޤϥåήήŶˤ³ƤȾƳΰ衤㡥ޤϥɥ쥤ΰΣ<br><br><b><ul></ul></b><br>Υ롼פϡİʾŶˤʤ֤ȾƳΰΤߤΣ	Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u> only semiconductor regions for devices that comprise three or more electrodes.</li></ul>	990
H10D  62/17		ήޤϥåήήʤŶˤ³ƤȾƳΰ衤㡥ͥΰΣ	Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions	1151
H10D  62/40		뾽¤Σ	Crystalline structures	244
H10D  62/50		ʪŪԴΣ	Physical imperfections	15
H10D  62/53		ԴȾƳΤˤΡΣ	the imperfections being within the semiconductor body	47
H10D  62/57		ԴȾƳΤɽ̤ˤΡ㡥̤ͭȾƳΡΣ	the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface	16
H10D  62/60		Խʪʬۤޤǻ١Σ	Impurity distributions or concentrations	367
H10D  62/80		ħΤΡΣ<br><br><b><ul></ul></b><br>Υ롼פʬह硤ɡѥȤ䤽¾Խʪ˴طʤθ롣<br>Υ롼פǤϡ<br>롼ףȣģȣģ̻ҹ¤ޤĶʻҹ¤ޤإƥܹޤ륰롼ףȣģȣģͥ褹<br>롼ףȣģȣģϥإƥܹޤ¾κޤ륰롼ףȣģȣģͥ褹Σ	characterised by the materials; <br><br><b><u>Note(s)</u></b><br><br><ul><li>When classifying in this group, constituents of a material are considered irrespective of any dopants or other impurities.</li><li>In this group: <ul><li>groups <b>H10D62/81 to H10D62/815</b> , covering quantum or superlattice structures, take precedence over groups <b>H10D62/82 to H10D62/826</b> , covering heterojunctions;</li><li>groups <b>H10D62/82 to H10D62/826</b> , covering heterojunctions, take precedence over groups <b>H10D62/83 to H10D62/864</b> , covering other materials.</li></ul></li></ul>	720
H10D  62/81		̻Ĥ̤򼨤¤ΤΡ㡥ñ̻Ұ͡ŪޤϽŪŰѲĹ¤ΤΡΣ	of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation	67
H10D  62/815		ŪޤϽŪŰѲĹ¤ΤΡ㡥ĶʻҤޤ¿̻Ұ͡ΣͣѣסϡΣ	of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]	102
H10D  62/82		إƥܹΣ	Heterojunctions	127
H10D  62/822		ɣ²ƱΤΥإƥܹΤߤΡ㡥ӣ顿ǣإƥܹΣ	comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions	113
H10D  62/824		ɣɣɡ²ƱΤΥإƥܹΤߤΡ㡥ǣΡǣΥإƥܹΣ	comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions	274
H10D  62/826		ɣɡ֣²ƱΤΥإƥܹΤߤΡ㡥ãԣ塿ȣԣإƥܹΣ	comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions	1
H10D  62/83		ɣ²ǤΡ㡥¥ɡףӣޤϥɡףǣΣ	being Group IV materials, e.g. B-doped Si or undoped Ge	471
H10D  62/832		İʾθǤʤɣ²ǤΡ㡥ӣǣΣ	being Group IV materials comprising two or more elements, e.g. SiGe	679
H10D  62/834		˥ɡѥȤˤħΤΡΣ	further characterised by the dopants	98
H10D  62/84		ޤϥƥΤߤǤΡΣ<br><br><b><ul></ul></b><br>Υ롼פϡޤϥƥβʪޤʤΣ	being selenium or tellurium only; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>does not cover</u> chemical compounds of selenium or of tellurium.</li></ul>	6
H10D  62/85		ɣɣɡ²ǤΡ㡥ǣΣ	being Group III-V materials, e.g. GaAs	753
H10D  62/852		İʾθǤʤɣɣɡ²ǤΡ㡥ǣΤޤϣɣӣСΣ	being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP	51
H10D  62/854		˥ɡѥȤˤħΤΡΣ	further characterised by the dopants	88
H10D  62/86		ɣɡ֣²ǤΡ㡥ڣϡΣ	being Group II-VI materials, e.g. ZnO	19
H10D  62/862		İʾθǤʤɣɡ֣²ǤΡ㡥ãڣԣΣ	being Group II-VI materials comprising three or more elements, e.g. CdZnTe	3
H10D  62/864		˥ɡѥȤˤħΤΡΣ	further characterised by the dopants	
H10D  64/00		Ű̾ɤ֤ͭŶˡΣ	Electrodes of devices having potential barriers	782
H10D  64/01		¤ޤϽΣ	Manufacture or treatment	1900
H10D  64/20		Ū礭ޤ֤ħΤŶˡΣ	Electrodes characterised by their shapes, relative sizes or dispositions	528
H10D  64/23		ήȯޤϥåήήŶˡ㡥ɥ쥤󡤥ΡɤޤϥɡΣ	Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes	1399
H10D  64/27		ήȯޤϥåήήʤŶˡ㡥ȡΣ	Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates	3359
H10D  64/60		ħΤŶˡΣ	Electrodes characterised by their materials	333
H10D  64/62		ȾƳΤȥߥå³줿ŶˡΣ	Electrodes ohmically coupled to a semiconductor	517
H10D  64/64		ȾƳΤФ륷åȥɤŶˡΣ	Electrodes comprising a Schottky barrier to a semiconductor	313
H10D  64/66		Τ𤷤ȾƳΤ̷礵줿ƳΤͭŶˡ㡥ͣɣŶˡΣ	Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes	627
H10D  64/68		Ρ㡥ΡħΤΡΣ	characterised by the insulator, e.g. by the gate insulator	610
H10D  80/00		Υ֥饹ޤ롤ʤȤ⣱Ĥ֤롤ʣ֤ΩΡΣ	Assemblies of multiple devices comprising at least one device covered by this subclass	91
H10D  80/20		ξʤȤ⣱Ĥ֤롼ףȣģȣģޤΡ㡥ѥѥų̥ȥ󥸥ޤϥåȥɤޤΩΡΣ	the at least one device being covered by groups <b>H10D1/00 to H10D48/00</b> , e.g. assemblies comprising capacitors, power FETs or Schottky diodes	769
H10D  80/30		ξʤȤ⣱Ĥ֤롼ףȣģȣģޤΡ㡥ѲϩΥץåΥåפޤΩΡΣ	the at least one device being covered by groups <b>H10D84/00 to H10D86/00</b> , e.g. assemblies comprising integrated circuit processor chips	623
H10D  84/00		ȾƳؤΤߤȾƳδޤϾ塤㡥ӣ饦Ͼޤϣӣ饦ϾΣǣ塤˷뽸֡Σ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	489
H10D  84/01		¤ޤϽΣ	Manufacture or treatment	1866
H10D  84/02		˴ŤѤѤ뤳ȤħΤΡΣ	characterised by using material-based technologies	31
H10D  84/03		ɣ²ѤѤΡ㡥ӣ鵻ѤޤϣӣõѡΣ	using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology	2837
H10D  84/05		ɣɣɡ²ѤѤΡΣ	using Group III-V technology	101
H10D  84/07		ɣɡ֣²ѤѤΡΣ	using Group II-VI technology	
H10D  84/08		ʣεѤȤ߹碌ѤΡ㡥ӣ鵻ѤȣӣõѤξѤΡޤϣӣ鵻Ѥȣɣɣɡ²ѤѤΡΣ	using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies	46
H10D  84/40		롼ףȣģޤϣȣģޤ뾯ʤȤ⣱Ĥιʤȡ롼ףȣģޤϣȣģޤ뾯ʤȤ⣱ĤιʤȤνѤħΤΡ㡥Хݡȥ󥸥沈ų̥ȥ󥸥νѡΣ	characterised by the integration of at least one component covered by groups <b>H10D12/00</b> or <b>H10D30/00</b> with at least one component covered by groups <b>H10D10/00</b> or <b>H10D18/00</b>, e.g. integration of IGFETs with BJTs	568
H10D  84/60		롼ףȣģޤϣȣģޤ뾯ʤȤ⣱ĤιʤνѤħΤΡ㡥Хݡȥ󥸥νѡʣȣģͥˡΣ	characterised by the integration of at least one component covered by groups <b>H10D10/00</b> or <b>H10D18/00</b>, e.g. integration of BJTs(<b>H10D84/40</b> takes precedence)	105
H10D  84/63		ķХݡȥ󥸥ȲХݡȥ󥸥ȤȤ߹碌Σ	Combinations of vertical and lateral BJTs	1
H10D  84/65		Σɣɣ̡ϡΣ	Integrated injection logic	1
H10D  84/67		䷿Хݡȥ󥸥Σ	Complementary BJTs	6
H10D  84/80		롼ףȣģޤϣȣģޤ뾯ʤȤ⣱ĤιʤνѤħΤΡ㡥沈ų̥ȥ󥸥νѡʣȣģͥˡΣ	characterised by the integration of at least one component covered by groups <b>H10D12/00</b> or <b>H10D30/00</b>, e.g. integration of IGFETs(<b>H10D84/40</b> takes precedence)	1275
H10D  84/82		ų̹ʤΤߤѤΡΣ	of only field-effect components	169
H10D  84/83		沈ų̥ȥ󥸥ΤߤѤΡΣ	of only insulated-gate FETs [IGFET]	2381
H10D  84/84		ϥ󥹥ȥ⡼ɤ沈ų̥ȥ󥸥ӥǥץå⡼ɤ沈ų̥ȥ󥸥Ȥ߹碌Σ	Combinations of enhancement-mode IGFETs and depletion-mode IGFETs	31
H10D  84/85		䷿沈ų̥ȥ󥸥㡥ãͣϣӡΣ	Complementary IGFETs, e.g. CMOS	1898
H10D  84/86		åȥɥų̥ȥ󥸥ѤΡΣ	of Schottky-barrier gate FETs	7
H10D  84/87		Уܹ祲ų̥ȥ󥸥ѤΡΣ	of PN-junction gate FETs	9
H10D  84/90		ޥ饤ѲϩΣ	Masterslice integrated circuits	109
H10D  86/00		ޤƳޤϾ˷뽸֡㡥ӣϣɴ⡤ޤϥƥ쥹⤷ϥ饹ľ˷ΡΣ<br><br><b><ul></ul></b><br>Υ롼פǤϡ֤¤ޤϽǤȤߤʤϡ֤켫Ȥʬह롣Σ	Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates; <br><br><b><u>Note(s)</u></b><br><br><ul><li>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.</li></ul>	1246
H10D  86/01		¤ޤϽΣ	Manufacture or treatment	938
H10D  86/03		ĤեʤΡ㡥ӣϣӡΣ	wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]	1
H10D  86/40		ʣȥ󥸥ħΤΡΣ	characterised by multiple TFTs	1851
H10D  86/60		ʣȥ󥸥ƥ֥ޥȥꥯ¸ߤΡΣ	wherein the TFTs are in active matrices	2439
H10D  86/80		ʣμưʡ㡥񹳴ѥޤϥħΤΡΣ	characterised by multiple passive components, e.g. resistors, capacitors or inductors	38
H10D  86/85		ưʤΤߤħΤΡΣ	characterised by only passive components	54
H10D  87/00		ƱľΥХ륯ʤȣӣϣɤޤϣӣϣӹʤ뽸֡Σ	Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate	125
H10D  88/00		֡Σ	Three-dimensional [3D] integrated devices	386
H10D  89/00		롼ףȣģȣģޤʤ֤δΣ	Aspects of integrated devices not covered by groups <b>H10D84/00 to H10D88/00</b> 	401
H10D  89/10		֤Υ쥤ȡΣ	Integrated device layouts	688
H10D  89/60		ŵޤǮݸ֡㡥šΣţӣġϤݸϩ뽸֡Σ	Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]	923
H10D  99/00		Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass	181
