H10F  10/00		ġθť롤㡥ӡŲ򷿴֡㡥ӡȣǣˡΣ	Individual photovoltaic cells, e.g. solar cells(electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, <b>H01G9/20</b>)	627
H10F  10/10		Ű̾ɤͭΡΣ	having potential barriers	337
H10F  10/11		ܿŰ̾ɤͭťʣȣƣͥˡΣ	Photovoltaic cells having point contact potential barriers(<b>H10F10/18</b> takes precedence)	2
H10F  10/12		°ΡȾƳΡΣͣɣӡϤŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers	3
H10F  10/13		졼ǥåɥХɥåפʤۼؤͭťΣ	Photovoltaic cells having absorbing layers comprising graded bandgaps	9
H10F  10/14		УΥۥܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PN homojunction potential barriers	1023
H10F  10/142		ʣΣУΥۥܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PN homojunctions, e.g. tandem cells	76
H10F  10/144		ɣɣɡݣ²κΤߤʤΡ㡥ǣ󡤣ɣǣޤϣɣиťΣ	comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells	20
H10F  10/16		УΥإƥܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PN heterojunction potential barriers	168
H10F  10/161		ʣΣУΥإƥܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PN heterojunctions, e.g. tandem cells	47
H10F  10/162		ɣɡݣ֣²κΤߤʤΡ㡥ãӡãԣťΣ	comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells	41
H10F  10/163		ɣɣɡݣ²κΤߤʤΡ㡥ǣ󡿣ɣǣޤϣɣСǣɣťΣ	comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells	33
H10F  10/164		ɣ²κȤΥإƥܹ礫ʤΡ㡥ɣԣϡӣޤϣǣ󡿣ӣǣťΣ	comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells	53
H10F  10/165		إƥܹ礬ɣ֡ݣɣ²إƥܹǤΡ㡥ӣ顿ǣ塤ӣǣ塿ӣޤϣӣ顿ӣøťΣ	the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells	89
H10F  10/166		ɣ֡ݣɣ²إƥܹ礬뾽ȥեΥإƥܹǤΡ㡥ꥳإƥܹΣӣȣʡϸťΣ	the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells	378
H10F  10/167		ɡݣɣɣɡݣ֣²κʤΡ㡥ãӡãӣ売ΣãӡϥإƥܹťΣ	comprising Group I-III-VI materials, e.g. CdS/CuInSe<sub>2</sub> [CIS] heterojunction photovoltaic cells	39
H10F  10/17		УɣܹŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only PIN junction potential barriers	156
H10F  10/172		ʣΣУɣܹ礫ʤΡ㡥ǥॻΣ	comprising multiple PIN junctions, e.g. tandem cells	25
H10F  10/174		ñ뾽ޤ¿뾽ʤΡΣ	comprising monocrystalline or polycrystalline materials	31
H10F  10/18		åȥŰ̾ɤΤߤͭťΣ	Photovoltaic cells having only Schottky potential barriers	6
H10F  10/19		ΰۤʤʣŰ̾ɤͭť롤㡥УܹȣУɣܹξͭ륿ǥॻΣ	Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions	53
H10F  19/00		롼ףȣƣޤ롤ʤȤ⣱Ĥθť롤֤ޤʣ֤ΩΡ㡥ť⥸塼Σ	Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group <b>H10F10/00</b>, e.g. photovoltaic modules	384
H10F  19/10		ñȾƳδ˥쥤θťΤǤäơť뤬ľܹޤϣ֥롼ܹͭΡΣ	comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions	21
H10F  19/20		ñȾƳδޤϾ˥쥤θťΤǤäơť뤬ʿܹͭΡƱľѤ줿ʣťͭΣȣƣˡΣ	comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions(having multiple thin-film photovoltaic cells deposited on the same substrate <b>H10F19/31</b>)	23
H10F  19/30		ťΡΣ	comprising thin-film photovoltaic cells	99
H10F  19/31		ƱľѤ줿ʣβܤťͭΡΣ	having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate	32
H10F  19/33		ť³뤿Υѥ˥󥰹㡥ƳؤޤϳؤΥ졼ǡΣ	Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers	25
H10F  19/35		ܤť³뤿ι¤㡥³ޤ凉ڡΣ	Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers	35
H10F  19/37		֤ޤʣ֤ΩΤ̤ƸʬŪƩᤵ뤿μʤΡ㡥ѤʬŪƩť⥸塼Σ	comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows	30
H10F  19/40		ŪѤ߽Ť֤ͤ줿ťΡΣ	comprising photovoltaic cells in a mechanically stacked configuration	79
H10F  19/50		ʤȤ⣱Ĥθť뤪¾μȾƳΤޤϸιʤ롤֡ʣȣƣͥˡΣ	Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (<b>H10F19/75</b> takes precedence)	16
H10F  19/70		ХѥɤΡ³ȢΥХѥɣȣӣˡΣ	comprising bypass diodes(bypass diodes in a junction box <b>H02S40/34</b>)	63
H10F  19/75		ХѥɤťȽѤޤľܴϢŤƤΡ㡥ƱޤϾ˷ΡΣ	the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate	37
H10F  19/80		ȤޤƴǤäơťͭ뽸֤ޤʣ֤ΩΤΤΤΡΣ	Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells	2303
H10F  19/85		ݸХåȡΣ	Protective back sheets	376
H10F  19/90		ť֤³뤿ι¤㡥³ޤ凉ڡñδľť֣ȣƣˡΣ	Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers(between thin-film photovoltaic cells on a single substrate <b>H10F19/35</b>)	1638
H10F  30/00		ġռȾƳ֤Ǥäơռ֤̤ήή椹Ρ㡥дΣ	Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors	145
H10F  30/10		Ű̾ɤֳͭĻޤϻ糰ռͤ˴֡㡥եȥ쥸Σ	the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors	165
H10F  30/20		Ű̾ɤͭ֡㡥եȥȥ󥸥Σ	the devices having potential barriers, e.g. phototransistors	245
H10F  30/21		ֳĻޤϻ糰ռͤ˴֡Σ	the devices being sensitive to infrared, visible or ultraviolet radiation	280
H10F  30/22		ĤΤߤŰ̾ɤͭ֡㡥եȥɡΣ	the devices having only one potential barrier, e.g. photodiodes	134
H10F  30/221		Ű̾ɤУΥۥܹǤΡΣ	the potential barrier being a PN homojunction	97
H10F  30/222		Ű̾ɤУΥإƥܹǤΡΣ	the potential barrier being a PN heterojunction	277
H10F  30/223		Ű̾ɤУɣξɤǤΡΣ	the potential barrier being a PIN barrier	159
H10F  30/225		Ű̾ɤХ󥷥⡼ɤưΡ㡥Х󥷥եȥɡΣ	the potential barrier working in avalanche mode, e.g. avalanche photodiodes	416
H10F  30/227		Ű̾ɤåȥɤǤΡΣ	the potential barrier being a Schottky barrier	98
H10F  30/24		ĤΤߤŰ̾ɤͭ֡㡥Хݡեȥȥ󥸥Σ	the devices having only two potential barriers, e.g. bipolar phototransistors	36
H10F  30/26		İʾŰ̾ɤͭ֡㡥եȥꥹΣ	the devices having three or more potential barriers, e.g. photothyristors	10
H10F  30/28		ų̺ѤħΤ֡㡥ܹ緿ų̥եȥȥ󥸥Σ	the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors	75
H10F  30/282		沈ų̥ȥ󥸥Σɣǣƣţԡϡ㡥ͣɣӣƣţԡζ°ΡȾƳų̥ȥ󥸥ϥեȥȥ󥸥Σ	Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors	104
H10F  30/29		ĶûȤռ㡥ޤγ˴֡Σ	the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation	101
H10F  30/292		Х륯ռд㡥ǣݣ̣УɣΥдΣ	Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors	8
H10F  30/295		ɽ̾ɤޤУܹռд㡥ɽ̾ɥեγҸдΣ	Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors	10
H10F  30/298		ų̺ѤħΤ֡㡥ͣɣӷдΣ	the devices being characterised by field-effect operation, e.g. MIS type detectors	11
H10F  39/00		롼ףȣƣޤ롤ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡ㡥եȥɥ쥤ռдΣ	Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group <b>H10F30/00</b>, e.g. radiation detectors comprising photodiode arrays	1410
H10F  39/10		֡Σ	Integrated devices	341
H10F  39/12		λ֡Σ	Image sensors	2013
H10F  39/15		Ųٷ緿Σããġϸλ֡Σ	Charge-coupled device [CCD] image sensors	91
H10F  39/18		䷿°ݻȾƳΡΣãͣϣӡϸλ֡եȥɥ쥤λ֡Σ	Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors	2174
H10F  39/90		ʣ֤ΩΡΣ	Assemblies of multiple devices	108
H10F  39/95		롼ףȣƣޤ롤ʤȤ⣱Ĥν֤Ρ㡥Ѳ줿λ֤ΡΣ	comprising at least one integrated device covered by group <b>H10F39/10</b>, e.g. comprising integrated image sensors	72
H10F  55/00		롼ףȣƣȣƣޤϣȣƣޤռȾƳ֤Ǥäơŵȹ¤Ū˴ϢŵŵŪޤϸŪ˷礵줿ΡΣ	Radiation-sensitive semiconductor devices covered by groups <b>H10F10/00</b>, <b>H10F19/00</b> or <b>H10F30/00</b> being structurally associated with electric light sources and electrically or optically coupled thereto	149
H10F  55/10		ռȾƳ֤ŵ椹Ρ㡥Ѵޤ֡Σ	wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices	19
H10F  55/15		ռ֤ŵ٤ȾƳ֤ǤΡΣ	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices	12
H10F  55/155		Ĥζ̴ޤϾ˷줿ΡΣ	formed in, or on, a common substrate	10
H10F  55/20		ŵռȾƳ֤椹Ρ㡥ץȥץΣ	wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers	43
H10F  55/25		ռ֤ŵ٤ȾƳ֤ǤΡΣ	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices	38
H10F  55/255		Ĥζ̴ޤϾ˷줿ΡΣ	formed in, or on, a common substrate	38
H10F  71/00		Υ֥饹ޤ֤¤ޤϽʸťͭ뽸֤ޤʣ֤ΩΤˤ롤ť³뤿Υѥ˥󥰹ȣƣťͭ뽸֤ޤʣ֤ΩΤΤΡȤޤƴ¤ޤϽȣƣռήή椹뾯ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡ¤ޤϽȣƣˡΣ	Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells <b>H10F19/33</b>;  manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells <b>H10F19/80</b>;  manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current <b>H10F39/00</b>)	7355
H10F  71/10		֤եȾƳκʤΡΣ	the devices comprising amorphous semiconductor material	398
H10F  77/00		Υ֥饹ޤ֤ι¤Ūռήή椹뾯ʤȤ⣱ĤǻҤ롤֤ޤʣ֤ΩΡι¤ŪȣƣˡΣ<br><br><b><ul></ul></b><br>Υ롼פʬह硤ּΤμबǤȽǤȤϡּΤμब롼ףȣƣȣƣȣƣޤϣȣƣʬव롣Σ	Constructional details of devices covered by this subclass(constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current <b>H10F39/00</b>);<br><br><b><u>Note(s)</u></b><br><br><ul><li>When classifying in this group, the type of device itself, when it is determined to be novel and non-obvious, should be classified in groups <b>H10F10/00</b>, <b>H10F19/00</b>, <b>H10F30/00</b> or <b>H10F55/00</b>.  </li></ul>	840
H10F  77/10		ȾƳΡΣ	Semiconductor bodies	16
H10F  77/12		Σ<br><br><b><ul></ul></b><br>Υ롼פʬह硤ɡѥȤޤ¾Խʪ˴طʤʬθ롣Σ	Active materials; <br><br><b><u>Note(s)</u></b><br><br><ul><li>When classifying in this group, constituents of a material are considered irrespective of any dopants or other impurities.</li></ul>	696
H10F  77/121		ΤߤޤϥƥΤߤʤΡΣ	comprising only selenium or only tellurium	17
H10F  77/122		ɣ²κΤߤʤΡΣ	comprising only Group IV materials	203
H10F  77/1223		ɡѥȤħΤΡΣ	characterised by the dopants	214
H10F  77/1226		ʣΣɣ²ǤʤΡ㡥ӣáΣ	comprising multiple Group IV elements, e.g. SiC	58
H10F  77/123		ɣɡݣ֣²κΤߤʤΡ㡥ãӡڣӤޤϣȣãԣΣ	comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe	101
H10F  77/124		ɣɣɡݣ²κΤߤʤΡ㡥ǣΣ	comprising only Group III-V materials, e.g. GaAs	252
H10F  77/14		ȾƳΤηȾƳΤȾƳΰηŪ礭ޤΣ	Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies	1179
H10F  77/16		ι¤㡥뾽¤칽¤ޤϷ뾽̡̤Σ	Material structures, e.g. crystalline structures, film structures or crystal plane orientations	61
H10F  77/162		ñ뾽㡥ޤ줿ȾƳγҡʣȣƣͥˡΣ	Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials(<b>H10F77/169</b> takes precedence)	21
H10F  77/164		¿뾽ȾƳΡΣ	Polycrystalline semiconductors	76
H10F  77/166		եȾƳΡΣ	Amorphous semiconductors	50
H10F  77/169		°ĤޤľȾƳΣ	Thin semiconductor films on metallic or insulating substrates	130
H10F  77/20		ŶˡΣ	Electrodes	3122
H10F  77/30		ƥ󥰡γռͤˤťؤ»ɤ֣ȣƣˡΣ	Coatings(arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation <b>H10F77/80</b>)	2232
H10F  77/40		ǻҤޤϸ֡ɽ̥ƥȣƣˡΣ	Optical elements or arrangements(surface textures <b>H10F77/70</b>)	482
H10F  77/42		ťľܴϢŤޤϽѤ줿Ρ㡥ȿͼʤޤϽʡΣ	directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means	436
H10F  77/45		ĹѴʡ㡥ߥͥåȺָޤϥåץС֤Ѥ뤳ȤˤΡΣ	Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements	135
H10F  77/48		ȿʹΣ£ӣҡϡΣ	Back surface reflectors [BSR]	70
H10F  77/50		Ȥޤƴʸť⥸塼ΤΤΣȣƣˡΣ	Encapsulations or containers(for photovoltaic modules <b>H10F19/80</b>)	382
H10F  77/60		ѡǮޤϲưΤ֡Σ	Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations	84
H10F  77/63		ťľܴϢŤޤϽѤ줿֡㡥ťľܴϢŤ줿ҡȥǽưѤΤ˽Ѥ줿ڥǻҡΣ	Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling	129
H10F  77/67		ťľܴϢŤǮͥ륮Ѥ뤿μʤޤΡ㡥Ѥ줿٥åǻҡΣ	including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements	27
H10F  77/70		ɽ̥ƥ㡤㡥ԥߥåɹ¤Σ	Surface textures, e.g. pyramid structures	717
H10F  77/80		γռͤˤťؤ»ɻߤ뤿֡㡥ѤΤΣ	Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications	13
H10F  77/90		ťľܴϢŤޤϽѤ줿ͥ륮Ѽʡ㡥ťȽѤ줿ǥ󥵡Σ	Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells	14
H10F  99/00		Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass	78
