H10N  10/00		ۼܹ礫ʤǮ֡ʤ٥å̤ޤϥڥ̤򼨤֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ<br><br><b><ul></ul></b><br>Υ롼פϡ¾ǮŸ̤ޤǮ̤򼨤ޤϼʤۼܹ礫ʤǮ֤ޤΣ	Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects(integrated devices or assemblies of multiple devices <b>H10N19/00</b>);<br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u> thermoelectric devices comprising a junction of dissimilar materials, with or without other thermoelectric or thermomagnetic effects.</li></ul>	3957
H10N  10/01		¤ޤϽΣ	Manufacture or treatment	8140
H10N  10/10		٥å̤ޤϥڥ̤ΤߤưΡΣ	operating with only the Peltier or Seebeck effects	3186
H10N  10/13		ܹǮ򴹼ʤħΤΡΣ	characterised by the heat-exchanging means at the junction	5321
H10N  10/17		֤륻ޤǮФι¤ޤħΤΡΣ	characterised by the structure or configuration of the cell or thermocouple forming the device	8385
H10N  10/80		¤ŪΣ	Constructional details	2443
H10N  10/81		ܹι¤ŪΣ	Structural details of the junction	927
H10N  10/813		ʬΥǤܹ㡥ФͤѤΡΣ	the junction being separable, e.g. using a spring	238
H10N  10/817		ʬΥǤʤܹ㡥ܹ礵줿ΡƷ뤵줿ΤޤϤϤդ줿ΡΣ	the junction being non- separable, e.g. being cemented, sintered or soldered	1643
H10N  10/82		³Σ	Interconnections	861
H10N  10/85		ǮγΣ	Thermoelectric active materials	782
H10N  10/851		̵ʪʤΡΣ	comprising inorganic compositions	2078
H10N  10/852		ƥ롤ޤβʤΡΣ	comprising tellurium, selenium or sulfur	3291
H10N  10/853		ǡޤϥӥޥʤΡʣȣΣͥˡΣ	comprising arsenic, antimony or bismuth(<b>H10N10/852</b> takes precedence)	1397
H10N  10/854		°ΤߤʤΡʣȣΣȣΣͥˡΣ	comprising only metals(<b>H10N10/852</b>, <b>H10N10/853</b> take precedence)	907
H10N  10/855		ۥǡúǡǤޤǤͭ벽ʪʤΡΣ	comprising compounds containing boron, carbon, oxygen or nitrogen	1815
H10N  10/856		ͭʪʤΡΣ	comprising organic compositions	2502
H10N  10/857		Ϣ³ŪˤޤϢ³ŪѲʪʤΡΣ	comprising compositions changing continuously or discontinuously inside the material	642
H10N  15/00		ۼܹͭʤǮ֡Ǯ֡㡥ͥ󥹥ȡݥå󥰥ϥ̤ѤΡʽ֤ޤʣ֤ΩΣȣΣˡΣ	Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect(integrated devices or assemblies of multiple devices <b>H10N19/00</b>)	1688
H10N  15/10		ͶΨβѲѤǮ֡㡥꡼٤ξ岼ǺưΡΣ	Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point	1553
H10N  15/20		ƩΨβѲѤǮ֡㡥꡼٤ξ岼ǺưΡΣ	Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point	245
H10N  19/00		롼ףȣΣȣΣޤ롤ʤȤ⣱ĤǮǻҤޤǮǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups <b>H10N10/00 to H10N15/00</b> 	840
H10N  30/00		֤ޤ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Piezoelectric or electrostrictive devices(integrated devices or assemblies of multiple devices <b>H10N39/00</b>)	11189
H10N  30/01		¤ޤϽΣ	Manufacture or treatment	9482
H10N  30/02		ʤޤϥηΣ	Forming enclosures or casings	1688
H10N  30/03		ʤޤʬޤ֤ȤΩơΣ	Assembling devices that include piezoelectric or electrostrictive parts	695
H10N  30/04		ޤ㡥ʬˤħưħޤϥ⡼ƱĴΣ	Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning	760
H10N  30/045		ʬˡˤΣ	by polarising	1963
H10N  30/05		¿ذ֤ޤ֡ޤϤʤ¤㡥ΤŶˤؤˤΡΣ	Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes	1013
H10N  30/053		ΤޤΤŶˤƱƷˤΣ	by integrally sintering piezoelectric or electrostrictive bodies and electrodes	625
H10N  30/057		Х륯ΤޤΤŶˤؤˤΣ	by stacking bulk piezoelectric or electrostrictive bodies and electrodes	313
H10N  30/06		Ŷˤޤ³㡥꡼ɤޤüҡηΣ	Forming electrodes or interconnections, e.g. leads or terminals	3329
H10N  30/063		³㡥ط֤ޤط֤³ŶˡηΣ	Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts	740
H10N  30/067		ط֤ޤط֤ñŶˤηΣ	Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts	703
H10N  30/07		ŵǻҤޤ¾δؤΡʤޤʡޤϤΤηΣ	Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base	336
H10N  30/071		̴ľؤΡʤޤʤȡȾƳǻҤޤ¾βϩǻҤȤμդΣ	Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate	530
H10N  30/072		ΤޤΤؤޤˤΣ	by laminating or bonding of piezoelectric or electrostrictive bodies	698
H10N  30/073		°ͻޤޤˤΣ	by fusion of metals or by adhesives	1136
H10N  30/074		ؤޤؤѤˤ롤㡥ޤϥ꡼Σ	by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing	623
H10N  30/076		ѤˤΣ	by vapour phase deposition	1073
H10N  30/077		ѤˤΣ	by liquid phase deposition	594
H10N  30/078		륲ѤˤΣ	by sol-gel deposition	730
H10N  30/079		Ѥˡ㡥ĹΣ	using intermediate layers, e.g. for growth control	905
H10N  30/08		ΤޤΤޤϵùΣ	Shaping or machining of piezoelectric or electrostrictive bodies	327
H10N  30/081		ޥѤۤޤѤˤ롤㡥եȥաΣ	by coating or depositing using masks, e.g. lift-off	253
H10N  30/082		å󥰤ˤ롤㡥꥽եΣ	by etching, e.g. lithography	1381
H10N  30/084		ޤϲˤΣ	by moulding or extrusion	384
H10N  30/085		ùˤΣ	by machining	223
H10N  30/086		ޤϸˤΣ	by polishing or grinding	445
H10N  30/088		ںޤϥ󥰤ˤΣ	by cutting or dicing	733
H10N  30/089		ѥ󥰤ˤΣ	by punching	112
H10N  30/09		źޤĺηΣ	Forming piezoelectric or electrostrictive materials	209
H10N  30/092		ʣηΣ	Forming composite materials	750
H10N  30/093		̵ηΣ	Forming inorganic materials	3591
H10N  30/095		ͻˤΣ	by melting	130
H10N  30/097		ˤΣ	by sintering	1627
H10N  30/098		ͭηΣ	Forming organic materials	1352
H10N  30/20		ŵŪϤӵŪϤͭΡ㡥奨ޤϿưҤȤƵǽΡΣ	with electrical input and mechanical output, e.g. functioning as actuators or vibrators	22175
H10N  30/30		ŪϤŵŪϤͭΡ㡥ȯŵޤϥ󥵤ȤƵǽΡΣ	with mechanical input and electrical output, e.g. functioning as generators or sensors	7464
H10N  30/40		ŵŪϤŵŪϤͭΡ㡥ѰȤƵǽΡΣ	with electrical input and electrical output, e.g. functioning as transformers	2448
H10N  30/50		ع¤ޤ¿ع¤ͭΡΣ	having a stacked or multilayer structure	7315
H10N  30/60		Ʊ֥ι¤ͭΡΣ	having a coaxial cable structure	199
H10N  30/80		¤ŪΣ	Constructional details	5675
H10N  30/85		ޤγΣ	Piezoelectric or electrostrictive active materials	9148
H10N  30/853		ߥåʪΣ	Ceramic compositions	11266
H10N  30/857		ʬʪΣ	Macromolecular compositions	2777
H10N  30/87		Ŷˤޤ³㡥꡼ɤޤüҡΣ	Electrodes or interconnections, e.g. leads or terminals	6379
H10N  30/88		ն񡨻ٻʤΣ	Mounts; Supports; Enclosures; Casings	4315
H10N  35/00		֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Magnetostrictive devices(integrated devices or assemblies of multiple devices <b>H10N39/00</b>)	1451
H10N  35/01		¤ޤϽΣ	Manufacture or treatment	425
H10N  35/80		¤ŪΣ	Constructional details	318
H10N  35/85		γΣ	Magnetostrictive active materials	759
H10N  39/00		롼ףȣΣȣΣޤ롤ʤȤ⣱ĤΰǻҡǻҤޤϼǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups <b>H10N30/00 to H10N35/00</b> 	982
H10N  50/00		ή֡ʥ֣ۡȣΣ֤ޤʣ֤ΩΣȣΣˡΣ	Galvanomagnetic devices(Hall-effect devices <b>H10N52/00</b>; integrated devices or assemblies of multiple devices <b>H10N59/00</b>)	113
H10N  50/01		¤ޤϽΣ	Manufacture or treatment	7258
H10N  50/10		ǻҡΣ	Magnetoresistive devices	15692
H10N  50/20		ԥжή֡ʼǻңȣΣˡΣ	Spin-polarised current-controlled devices(magnetoresistive devices <b>H10N50/10</b>)	560
H10N  50/80		¤ŪΣ	Constructional details	5698
H10N  50/85		ΰκΣ	Materials of the active region	1322
H10N  52/00		ۡ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Hall-effect devices(integrated devices or assemblies of multiple devices <b>H10N59/00</b>)	3441
H10N  52/01		¤ޤϽΣ	Manufacture or treatment	1107
H10N  52/80		¤ŪΣ	Constructional details	1574
H10N  52/85		ΰκΣ	Materials of the active region	232
H10N  59/00		롼ףȣΣȣΣޤ롤ʤȤ⣱ĤήǻҤޤϥۡǻҤ롤֤ޤʣ֤ΩΡʼ񹳥ॢΣͣң֣͡ȣ£ˡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups <b>H10N50/00 to H10N52/00</b>  (MRAM devices <b>H10B61/00</b>)	283
H10N  60/00		ĶƳ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Superconducting devices(integrated devices or assemblies of multiple devices <b>H10N69/00</b>)	2850
H10N  60/01		¤ޤϽΣ	Manufacture or treatment	10475
H10N  60/10		ܹ˴Ť֡Σ	Junction-based devices	409
H10N  60/12		祻ե֡Σ	Josephson-effect devices	777
H10N  60/20		ʵĶƳ֡Σ	Permanent superconducting devices	1515
H10N  60/30		ĶƳ֤֤Ȥδ֤ڴǽ֡Σ	Devices switchable between superconducting and normal states	900
H10N  60/35		饤ȥΣ	Cryotrons	156
H10N  60/355		ѥ饤ȥΣ	Power cryotrons	547
H10N  60/80		¤ŪΣ	Constructional details	2547
H10N  60/81		ƴնΣ	Containers; Mountings	3252
H10N  60/82		ήϩΣ	Current path	1209
H10N  60/83		ǻҤηΣ	Element shape	165
H10N  60/84		ĶƳ֤֤Ȥδ֤ڴǽ֤ΤڴʡΣ	Switching means for devices switchable between superconducting and normal states	279
H10N  60/85		ĶƳγΣ	Superconducting active materials	3282
H10N  69/00		롼ףȣΣޤ롤ʤȤ⣱ĤĶƳǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group <b>H10N60/00</b>	928
H10N  70/00		Ű̾ɤͭʤήȯޤϥå󥰤äŬ֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching(integrated devices or assemblies of multiple devices <b>H10N79/00</b>)	2935
H10N  70/10		οʹ֡Σ	Solid-state travelling-wave devices	133
H10N  70/20		¿ꥹå֡㡥ꥹΣ	Multistable switching devices, e.g. memristors	2600
H10N  79/00		롼ףȣΣޤ롤ʤȤ⣱ĤθǻҤ롤֤ޤʣ֤ΩΡʣңң֣ȣ£Уãң֣ȣ£ˡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group <b>H10N70/00</b> (ReRAM devices <b>H10B63/00</b>;  PCRAM devices <b>H10B63/10</b>)	157
H10N  80/00		Х륯񹳸֡ʽ֤ޤʣ֤ΩΣȣΣˡΣ	Bulk negative-resistance effect devices(integrated devices or assemblies of multiple devices <b>H10N89/00</b>)	2001
H10N  80/10		֡Σ	Gunn-effect devices	866
H10N  89/00		롼ףȣΣޤ롤ʤȤ⣱ĤΥХ륯񹳸ǻҤ롤֤ޤʣ֤ΩΡΣ	Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group <b>H10N80/00</b>	83
H10N  97/00		¾ʬवʤŵŪޤϸ֡Σ	Electric solid-state thin-film or thick-film devices, not otherwise provided for	10615
H10N  99/00		Υ֥饹¾Υ롼פʬवʤΣ	Subject matter not provided for in other groups of this subclass	4409
