H10P  10/00		ϡĤޤ֤ʤΥܥǥ󥰡Σ<br><br><b><ul></ul></b><br>Σ<br>Υ롼פϡʣǤդ³빩ޤϡʣ֤Υѥå󥰹Τɤ餫˹Ԥ륦ϤޤϴĤΥܥǥ󥰤ޤ롣ʣˡޤϡʣˤιΤ줬˹ԤƤɤ<br>ʲդ뤳ȡ<br>åסѥåʤޤ³ޤܥǥ󥰤δ㡥åסݥݥåץܥǥ󥰤ޤϥåסݥݥϥܥǥ󥰤ϡ֥饹ȣס㡥ȣףʬव롣	Bonding of wafers, substrates or parts of devices; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u> bonding of wafers or substrates either (i) before the step of making of any interconnections or (ii) before the step of packaging of devices, whichever step comes first.</li><li>Attention is drawn to the following: <ul><li>aspects of bonding involving chips, package parts or interconnections, e.g. chip-on-chip bonding or chip-on-wafer bonding, are classified in subclass <b>H10W</b>, e.g. in group <b>H10W80/00</b>.</li></ul></li></ul>	
H10P  14/00		η㡥ؤޤϥԥ顼˷Σ	Formation of materials, e.g. in the shape of layers or pillars	
H10P  14/20		ȾƳκηΣ	of semiconductor materials	
H10P  14/22		ʪѤΡ㡥ޤϥѥå󥰡Σ	using physical deposition, e.g. vacuum deposition or sputtering	
H10P  14/24		صĹΣã֣ġϤѤΡΣ	using chemical vapour deposition [CVD]	
H10P  14/26		ѤѤΡΣ	using liquid deposition	
H10P  14/40		Ƴźޤ񹳺ηΣ	of conductive or resistive materials	
H10P  14/42		ΤޤϾѤΡΣ	using a gas or vapour	
H10P  14/43		ؾ塤㡥صĹΣã֣ġϡΣ	Chemical deposition, e.g. chemical vapour deposition [CVD]	
H10P  14/44		ʪĹΣУ֣ġϡΣ	Physical vapour deposition [PVD]	
H10P  14/45		ѥå󥰡Σ	Sputtering	
H10P  14/46		ΤѤΡΣ	using a liquid	
H10P  14/47		ŲϽСʤŲä̵ŲäΣ	Electrolytic deposition, i.e. electroplating; Electroless plating	
H10P  14/60		ηΣ	of insulating materials	
H10P  14/61		ޥѤΡΣ	using masks	
H10P  14/68		ͭ㡥եȥ쥸ȡΣ	Organic materials, e.g. photoresists	
H10P  14/69		̵Σ	Inorganic materials	
H10P  14/692		ʪ饹ʪޤϻʪϥ饹ΡΣ	composed of oxides, glassy oxides or oxide-based glasses	
H10P  14/694		ⲽʪΡΣ	composed of nitrides	
H10P  30/00		ϡĤޤ֤ʤؤΥΣ	Ion implantation into wafers, substrates or parts of devices	
H10P  30/20		ȾƳκؤΥ㡥ɡԥ󥰤ΤΤΡΣ	into semiconductor materials, e.g. for doping	
H10P  30/22		ޥѤΡΣ	using masks	
H10P  30/28		ˡ빩ħΤΡ㡥ɡѥȤ뤿ΤΡΣ	characterised by an annealing step, e.g. for activation of dopants	
H10P  30/40		ؤΥΣ	into insulating materials	
H10P  32/00		ϡĤޤ֤ʤǤΡؤΡޤϤ餫鳰ؤΥɡѥȤγȻʺη˳ȻΣȣУˡΣ	Diffusion of dopants within, into, or out of wafers, substrates or parts of devices(during formation of materials <b>H10P14/00</b>)	
H10P  32/10		ȾƳΤޤȾƳؤǤΡؤΡޤϤ餫鳰ؤΥɡѥȤγȻΣ	Diffusion of dopants within, into or out of semiconductor bodies or layers	
H10P  32/12		ȵδ֤ǤγȻΣ	between a solid phase and a gaseous phase	
H10P  32/14		ñȾƳΤޤϸñȾƳؤǤγȻ˸ǤۤʤȾƳΤޤȾƳؤδ֤γȻΣ	within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase	
H10P  32/16		ȱδ֤ǤγȻΣ	between a solid phase and a liquid phase	
H10P  32/20		ؤΥɡԥ󥰤ΤΥɡѥȤγȻΣ	Diffusion for doping of insulating layers	
H10P  32/30		ƳؤޤؤΥɡԥ󥰤ΤΥɡѥȤγȻΣ	Diffusion for doping of conductive or resistive layers	
H10P  34/00		ϡĤޤ֤ʤФżռޤγռξȼ͡Σ	Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices	
H10P  34/20		ǤѴȿΤΡΣ	for inducing a nuclear reaction transmuting chemical elements	
H10P  34/40		⥨ͥ륮ռˤΡΣ	with high-energy radiation	
H10P  34/42		żռˤΡ㡥졼ˡʥ졼ǣȣУˡΣ	with electromagnetic radiation, e.g. laser annealing(laser cutting <b>H10P54/20</b>)	
H10P  36/00		ȾƳΥå󥰡Σ	Gettering within semiconductor bodies	
H10P  36/20		ȥ󥷥åå󥰡ʤꥳ¸ߤǤѤƷ٤ǮŪͶΡΣ	Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body	
H10P  50/00		ϡĤޤ֤ʤΥå󥰡Σ	Etching of wafers, substrates or parts of devices	
H10P  50/20		ɥ饤å󥰡ץ饺ޥå󥰡ȿ󥨥å󥰡Σ	Dry etching; Plasma etching; Reactive-ion etching	
H10P  50/24		ȾƳκФΡΣ	of semiconductor materials	
H10P  50/26		Ƴźޤ񹳺ФΡΣ	of conductive or resistive materials	
H10P  50/28		ФΡΣ	of insulating materials	
H10P  50/60		åȥå󥰡Σ	Wet etching	
H10P  50/61		Ų򥨥å󥰡Σ	Electrolytic etching	
H10P  50/64		ȾƳκФΡΣ	of semiconductor materials	
H10P  50/66		Ƴźޤ񹳺ФΡΣ	of conductive or resistive materials	
H10P  50/68		ФΡΣ	of insulating materials	
H10P  52/00		ϡĤޤ֤ʤθåԥ󥰤ޤϸΣ	Grinding, lapping or polishing of wafers, substrates or parts of devices	
H10P  52/20		ŵظΣţͣСϡŵصΣţãͣСϡΣ	Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]	
H10P  52/40		صΣãͣСϡŵصȣУˡΣ	Chemomechanical polishing [CMP](electrochemical mechanical polishing <b>H10P52/20</b>)	
H10P  54/00		ϡĤޤ֤ʤǤޤʬΥΣ<br><br><b><ul></ul></b><br>Σ<br>Υ롼פϡȾƳ֤ޤϸ֤ޤϾ˷Ƥ롤ޤϤ줫롤ϤޤϴĤǤޤʬΥޤ롣Ǥ϶ɽŪǤäƤ褤㡥¤뤿Τ	Cutting or separating of wafers, substrates or parts of devices; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u> cutting or separating of wafers or substrates having semiconductor or solid-state devices formed, or to be formed, therein or thereon. The cutting may be partial, e.g. for making a groove.</li></ul>	
H10P  54/20		졼ѤΡΣ	by laser cutting	
H10P  54/30		ǤʬΤ˼岽ΰΡ㡥졼ޤϥˤΡΣ	by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation	
H10P  54/40		󥰤ˤΡ㡥ž֥졼ɤưϤѤΡΣ	by sawing, e.g. using revolving or reciprocating blades	
H10P  54/50		饤ӥ󥰡֥졼󥰤ޤˤΡΣ	by scoring, breaking or cleaving	
H10P  54/90		Ūˡޤ֡Σ	Auxiliary processes or arrangements	
H10P  54/92		Ǥޤʬ˥ϤޤϴĤɽ̤ݸޤ䶯뤿ΤΡ㡥ǴơפѤΡΣ	for protecting or reinforcing the surface of wafers or substrates during cutting or separating, e.g. using adhesive tapes	
H10P  54/94		㡥ǴơפޤϻٻΤνΣ	After-treatments, e.g. removal of adhesive tapes or supports	
H10P  56/00		ϡĤޤ֤ʤΥǥܥǥ󥰡Σ	Debonding of wafers, substrates or parts of devices	
H10P  58/00		ϤޤϴĤʣΥåפ˸ҲΡʤ󥰡Σ<br><br><b><ul></ul></b><br>Σ<br>Υ롼פʬहȤǤޤʬΥ˴ؤ뤢ϡ˽פʾ󶡤ȹͤ硢ȣУˤʬषƤ褤	Singulating wafers or substrates into multiple chips, i.e. dicing; <br><br><b><u>Note(s)</u></b><br><br><ul><li>When classifying in this group, any process step involving cutting or separating, which is considered to represent information of interest for search, may also be classified in group <b>H10P54/00</b>.</li></ul>	
H10P  70/00		ϡĤޤ֤ʤΣ<br><br><b><ul></ul></b><br>Σ<br>Υ롼פϡѥåǡѥåʤޤ¾ι¤κ㡥⡼ɸΥѥåޤʤ⡼ɸΥѥåϥ֥饹ȣפδϢ륰롼פޤ롣	Cleaning of wafers, substrates or parts of devices; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>does not cover</u> the cleaning of package elements, package parts or other constructional details, e.g. cleaning of packages after moulding, which are covered by the related groups of subclass <b>H10W</b>.</li></ul>	
H10P  72/00		ϡĤޤ֤¤ޤϽˤ갷ޤݻΡΣ	Handling or holding of wafers, substrates or devices during manufacture or treatment thereof	
H10P  72/10		ѤΥꥢѤΡ㡥ηǼƴΣƣϣգСϡΣ	using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]	
H10P  72/30		ʡ㡥ۤʤִ֤ǤΣ	for conveying, e.g. between different workstations	
H10P  72/50		ַᡤᡤޤϥ饤ȤΤΤΡΣ	for positioning, orientation or alignment	
H10P  72/70		ٻޤĻΤΤΡΣ	for supporting or gripping	
H10P  72/72		ťåѤΡΣ	using electrostatic chucks	
H10P  72/76		ŪʤѤΡ㡥פޤϥԥΣ	using mechanical means, e.g. clamps or pinches	
H10P  72/78		鰵۰ѤΡ㡥٥̡åΣ	using vacuum or suction, e.g. Bernoulli chucks	
H10P  74/00		ϡĤޤ֤¤ޤϽλޤ¬Σ	Testing or measuring during manufacture or treatment of wafers, substrates or devices	
H10P  74/20		롤ޤ¬ꤵħΤΡ㡥¤ŪޤŵŪΣ	characterised by the properties tested or measured, e.g. structural or electrical properties	
H10P  76/00		ȾƳξΥޥ¤ޤϽ㡥꥽եޤϥեȥ꥽եˤΡΣ	Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography	
H10P  76/20		ͭʤޥΣ	of masks comprising organic materials	
H10P  76/40		̵ʤޥΣ	of masks comprising inorganic materials	
H10P  90/00		Υ֥饹ñΥᥤ󥰥롼פޤʤϤ¤㡥Ϥ䶯Σ<br><br><b><ul></ul></b><br>Σ<br>Υ롼פϡθޤϾȾƳ֤ޤϸ֤¤ΥϤ¤뤿¿ʳޤ롣<br>Υ롼פȾƳΤΥ󥴥åȤñ뾽Ĺޤʤñ뾽Ĺϥ֥饹ã¤ޤ롣	Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement; <br><br><b><u>Note(s)</u></b><br><br><ul><li>This group <u>covers</u> multistep processes for the preparation of wafers before the subsequent manufacture of semiconductor devices or solid-state devices therein or thereon.</li><li>This group <u>does not cover</u> the single-crystal growth of semiconductor ingots, which is covered by subclass <b>C30B</b>.</li></ul>	
H10P  95/00		Υ֥饹¾Υ롼פޤʤ¤ޤϽΤΰŪˡޤ֡Σ	Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass	
H10P  95/40		ѹȾƳΤν㡥˷٤ΡΣ	Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections	
H10P  95/60		Ū㡥ĶȤˤΡΣ	Mechanical treatments, e.g. by ultrasounds	
H10P  95/70		ŪΣ	Chemical treatments	
H10P  95/80		ŵŪ㡥쥯ȥեߥ󥰤ΤΤΡΣ	Electrical treatments, e.g. for electroforming	
H10P  95/90		Ǯ㡥ˡ󥰤ޤϥ󥿥󥰡Σ	Thermal treatments, e.g. annealing or sintering	
