H01L21/00	7	Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof<br><br><u>NOTE</u><br><br>Due to the ongoing developments in class H10 and related subclasses, the information displayed in notes, references and definitions of this main group and indents may not be entirely accurate. For each specific subject matter referred to in this main group and indents, users are invited to consult the relevant place in class H10 and to consider the class H10 information as correct, in case of conflict	H01L21/00	H01L21/00		10279
H01L21/02	8	Manufacture or treatment of semiconductor devices or of parts thereof	H01L21/02	H01L21/02		6722
H01L21/02002	9	{Preparing wafers}<br><br><u>NOTE</u><br><br>This group covers processes for manufacturing wafers prior to the fabrication of any device, i.e. between the sawing of ingots (covered by B28D) and the cleaning of substrates (covered by H01L21/02041 ). <br>This group does not cover: <br> simple use of grinding or polishing machines B24B<br> thermal smoothening H01L21/324.	H01L21/02	H01L21/02		1381
H01L21/02005	10	{Preparing bulk and homogeneous wafers}	H01L21/02	H01L21/02		247
H01L21/02008	11	{Multistep processes}	H01L21/02	H01L21/02		493
H01L21/0201	12	{Specific process step}	H01L21/02	H01L21/02		337
H01L21/02013	13	{Grinding, lapping}	H01L21/02	H01L21/02		985
H01L21/02016	13	{Backside treatment}	H01L21/02	H01L21/02		438
H01L21/02019	13	{Chemical etching}	H01L21/02	H01L21/02		790
H01L21/02021	13	{Edge treatment, chamfering}	H01L21/02	H01L21/02		620
H01L21/02024	13	{Mirror polishing}	H01L21/02	H01L21/02		947
H01L21/02027	11	{Setting crystal orientation}	H01L21/02	H01L21/02		67
H01L21/0203	11	{Making porous regions on the surface}	H01L21/02	H01L21/02		103
H01L21/02032	11	{by reclaiming or re-processing}	H01L21/02	H01L21/02		300
H01L21/02035	11	{Shaping}	H01L21/02	H01L21/02		182
H01L21/02041	9	{Cleaning}	H01L21/02	H01L21/02		1332
H01L21/02043	10	{Cleaning before device manufacture, i.e. Begin-Of-Line process}	H01L21/02	H01L21/02		350
H01L21/02046	11	{Dry cleaning only (H01L21/02085 takes precedence)}	H01L21/02	H01L21/02		1455
H01L21/02049	12	{with gaseous HF}	H01L21/02	H01L21/02		190
H01L21/02052	11	{Wet cleaning only (H01L21/02085 takes precedence)}	H01L21/02	H01L21/02		3891
H01L21/02054	11	{combining dry and wet cleaning steps (H01L21/02085 takes precedence)}	H01L21/02	H01L21/02		269
H01L21/02057	10	{Cleaning during device manufacture}	H01L21/02	H01L21/02		4413
H01L21/0206	11	{during, before or after processing of insulating layers}	H01L21/02	H01L21/02		1583
H01L21/02063	12	{the processing being the formation of vias or contact holes}	H01L21/02	H01L21/02		2149
H01L21/02065	12	{the processing being a planarization of insulating layers}	H01L21/02	H01L21/02		301
H01L21/02068	11	{during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers}	H01L21/02	H01L21/02		1831
H01L21/02071	12	{the processing being a delineation, e.g. RIE, of conductive layers}	H01L21/02	H01L21/02		1184
H01L21/02074	12	{the processing being a planarization of conductive layers}	H01L21/02	H01L21/02		902
H01L21/02076	10	{Cleaning after the substrates have been singulated}	H01L21/02	H01L21/02		242
H01L21/02079	10	{Cleaning for reclaiming}	H01L21/02	H01L21/02		205
H01L21/02082	10	{product to be cleaned}	H01L21/02	H01L21/02		353
H01L21/02085	11	{Cleaning of diamond}	H01L21/02	H01L21/02		16
H01L21/02087	11	{Cleaning of wafer edges}	H01L21/02	H01L21/02		483
H01L21/0209	11	{Cleaning of wafer backside}	H01L21/02	H01L21/02		472
H01L21/02093	11	{Cleaning of porous materials}	H01L21/02	H01L21/02		8
H01L21/02096	10	{only mechanical cleaning}	H01L21/02	H01L21/02		384
H01L21/02098	10	{only involving lasers, e.g. laser ablation}	H01L21/02	H01L21/02		88
H01L21/02101	10	{only involving supercritical fluids}	H01L21/02	H01L21/02		437
H01L21/02104	9	{Forming layers (deposition in general C23C; crystal growth in general C30B)}	H01L21/02	H01L21/02		520
H01L21/02107	10	{Forming insulating materials on a substrate}	H01L21/02	H01L21/02		1560
H01L21/02109	11	{characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates}	H01L21/02	H01L21/02		163
H01L21/02112	12	{characterised by the material of the layer}<br><br><u>NOTE</u><br><br>Layers comprising sublayers, i.e. multi-layers, are additionally classified in H01L21/022; porous layers are additionally classified in H01L21/02203.	H01L21/02	H01L21/02		591
H01L21/02115	13	{the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon}	H01L21/02	H01L21/02		924
H01L21/02118	13	{carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC (polymers per seC08G, photoresist per seG03F)}	H01L21/02	H01L21/02		2200
H01L21/0212	14	{the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene}	H01L21/02	H01L21/02		507
H01L21/02123	13	{the material containing silicon}	H01L21/02	H01L21/02		630
H01L21/02126	14	{the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}	H01L21/02	H01L21/02		3860
H01L21/02129	15	{the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}<br><br><u>NOTE</u><br><br>Halogen, e.g. fluorine, containing BPSG, PSG, BSG, and the like, are additionally classified in H01L21/02131.	H01L21/02	H01L21/02		1896
H01L21/02131	15	{the material being halogen doped silicon oxides, e.g. FSG}	H01L21/02	H01L21/02		509
H01L21/02134	15	{the material comprising hydrogen silsesquioxane, e.g. HSQ}	H01L21/02	H01L21/02		262
H01L21/02137	15	{the material comprising alkyl silsesquioxane, e.g. MSQ}	H01L21/02	H01L21/02		172
H01L21/0214	15	{the material being a silicon oxynitride, e.g. SiON or SiON:H}	H01L21/02	H01L21/02		1738
H01L21/02142	14	{the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}	H01L21/02	H01L21/02		227
H01L21/02145	15	{the material containing aluminium, e.g. AlSiOx}	H01L21/02	H01L21/02		204
H01L21/02148	15	{the material containing hafnium, e.g. HfSiOx or HfSiON}	H01L21/02	H01L21/02		287
H01L21/0215	15	{the material containing tantalum, e.g. TaSiOx}	H01L21/02	H01L21/02		41
H01L21/02153	15	{the material containing titanium, e.g. TiSiOx}	H01L21/02	H01L21/02		100
H01L21/02156	15	{the material containing at least one rare earth element, e.g. silicate of lanthanides, scandium or yttrium}	H01L21/02	H01L21/02		60
H01L21/02159	15	{the material containing zirconium, e.g. ZrSiOx}	H01L21/02	H01L21/02		103
H01L21/02161	15	{the material containing more than one metal element}	H01L21/02	H01L21/02		81
H01L21/02164	14	{the material being a silicon oxide, e.g. SiO2}<br><br><u>NOTE</u><br><br> The formation of silicon oxide layers is classified in this group regardless of the precursor or of the process of formation; in case of explicit statements on doping, on rest-groups, or on material components seeH01L21/02126 and subgroups; deposition of silicon oxide from organic precursors without further statements on film composition is classified here and in H01L21/02205 and subgroups. 	H01L21/02	H01L21/02		7708
H01L21/02167	14	{the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides (H01L21/02126 and H01L21/0214 take precedence)}	H01L21/02	H01L21/02		1087
H01L21/0217	14	{the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (H01L21/02126 and H01L21/0214 take precedence)}	H01L21/02	H01L21/02		5826
H01L21/02172	13	{the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides (materials containing silicon H01L21/02123; metal silicates H01L21/02142)}	H01L21/02	H01L21/02		688
H01L21/02175	14	{characterised by the metal (H01L21/02197 takes precedence)}	H01L21/02	H01L21/02		936
H01L21/02178	15	{the material containing aluminium, e.g. Al2O3}	H01L21/02	H01L21/02		2270
H01L21/02181	15	{the material containing hafnium, e.g. HfO2}	H01L21/02	H01L21/02		1575
H01L21/02183	15	{the material containing tantalum, e.g. Ta2O5}	H01L21/02	H01L21/02		937
H01L21/02186	15	{the material containing titanium, e.g. TiO2}	H01L21/02	H01L21/02		1106
H01L21/02189	15	{the material containing zirconium, e.g. ZrO2}	H01L21/02	H01L21/02		1003
H01L21/02192	15	{the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}	H01L21/02	H01L21/02		554
H01L21/02194	15	{the material containing more than one metal element}	H01L21/02	H01L21/02		715
H01L21/02197	14	{the material having a perovskite structure, e.g. BaTiO3}	H01L21/02	H01L21/02		1243
H01L21/022	12	{the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H01L21/02304, H01L21/02362)}	H01L21/02	H01L21/02		2992
H01L21/02203	12	{the layer being porous}	H01L21/02	H01L21/02		1356
H01L21/02205	12	{the layer being characterised by the precursor material for deposition}	H01L21/02	H01L21/02		1429
H01L21/02208	13	{the precursor containing a compound comprising Si}	H01L21/02	H01L21/02		478
H01L21/02211	14	{the compound being a silane, e.g. disilane, methylsilane or chlorosilane}	H01L21/02	H01L21/02		3045
H01L21/02214	14	{the compound comprising silicon and oxygen}<br><br><u>NOTE</u><br><br>This group does not cover mixtures of a silane and oxygen.	H01L21/02	H01L21/02		165
H01L21/02216	15	{the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}	H01L21/02	H01L21/02		1900
H01L21/02219	14	{the compound comprising silicon and nitrogen}<br><br><u>NOTE</u><br><br>This group does not cover mixtures of silane and nitrogen.	H01L21/02	H01L21/02		643
H01L21/02222	15	{the compound being a silazane}	H01L21/02	H01L21/02		450
H01L21/02225	11	{characterised by the process for the formation of the insulating layer}	H01L21/02	H01L21/02		316
H01L21/02227	12	{formation by a process other than a deposition process}<br><br><u>NOTE</u><br><br>Subject matter classified in the range of H01L21/0223&#160;-&#160;H01L21/02249 is additionally classified in H01L21/02249, H01L21/02255 and H01L21/02252, depending on the type of reaction. 	H01L21/02	H01L21/02		92
H01L21/0223	13	{formation by oxidation, e.g. oxidation of the substrate}	H01L21/02	H01L21/02		671
H01L21/02233	14	{of the semiconductor substrate or a semiconductor layer}	H01L21/02	H01L21/02		411
H01L21/02236	15	{group IV semiconductor}	H01L21/02	H01L21/02		749
H01L21/02238	16	{silicon in uncombined form, i.e. pure silicon}	H01L21/02	H01L21/02		2389
H01L21/02241	15	{III-V semiconductor}	H01L21/02	H01L21/02		214
H01L21/02244	14	{of a metallic layer}	H01L21/02	H01L21/02		705
H01L21/02247	13	{formation by nitridation, e.g. nitridation of the substrate}	H01L21/02	H01L21/02		637
H01L21/02249	13	{formation by combined oxidation and nitridation performed simultaneously}	H01L21/02	H01L21/02		163
H01L21/02252	13	{formation by plasma treatment, e.g. plasma oxidation of the substrate (after treatment of an insulating film by plasma H01L21/3105 and subgroups)}	H01L21/02	H01L21/02		1119
H01L21/02255	13	{formation by thermal treatment (H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups)}	H01L21/02	H01L21/02		2507
H01L21/02258	13	{formation by anodic treatment, e.g. anodic oxidation}	H01L21/02	H01L21/02		380
H01L21/0226	12	{formation by a deposition process (per seC23C)}	H01L21/02	H01L21/02		300
H01L21/02263	13	{deposition from the gas or vapour phase}<br><br><u>NOTE</u><br><br>This group and subgroups also cover deposition methods in which the gas or vapour is produced by physical means, e.g. ablation from targets or heating of source material.	H01L21/02	H01L21/02		874
H01L21/02266	14	{deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition}	H01L21/02	H01L21/02		1216
H01L21/02269	14	{deposition by thermal evaporation (H01L21/02293 takes precedence)}<br><br><u>NOTE</u><br><br>Subject matter relating to molecular beam epitaxy is classified in this group.	H01L21/02	H01L21/02		232
H01L21/02271	14	{deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (H01L21/02266 takes precedence)}	H01L21/02	H01L21/02		5293
H01L21/02274	15	{in the presence of a plasma [PECVD]}	H01L21/02	H01L21/02		8029
H01L21/02277	15	{the reactions being activated by other means than plasma or thermal, e.g. photo-CVD}	H01L21/02	H01L21/02		206
H01L21/0228	15	{deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}<br><br><u>NOTE</u><br><br>Subject matter relating to cyclic plasma CVD is additionally classified in H01L21/02274.	H01L21/02	H01L21/02		6009
H01L21/02282	13	{liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}	H01L21/02	H01L21/02		3980
H01L21/02285	14	{Langmuir-Blodgett techniques}	H01L21/02	H01L21/02		76
H01L21/02288	14	{printing, e.g. ink-jet printing (per seB41J)}	H01L21/02	H01L21/02		233
H01L21/0229	14	{liquid atomic layer deposition}	H01L21/02	H01L21/02		18
H01L21/02293	13	{formation of epitaxial layers by a deposition process (epitaxial growth per seC30B)}<br><br><u>NOTE</u><br><br>Formation of non-epitaxial layers by MBE, ALE, etc. is not covered by this group; for MBE seeH01L21/02269; for ALE seeH01L21/0228.	H01L21/02	H01L21/02		727
H01L21/02296	11	{characterised by the treatment performed before or after the formation of the layer (H01L21/02227 and subgroups take precedence)}<br><br><u>NOTE</u><br><br>This group and subgroups only cover processes which are directly linked to the layer formation; routine anneals, i.e. thermal treatment without further features like a special atmosphere, presence of a plasma, thermally induced chemical reactions, change of phase (crystal structure) etc. are not classified here; for cleaning seeH01L21/02041 and subgroups; for etching processes seeH01L21/311 and subgroups; for planarization processes seeH01L21/31051 and subgroups; for processes to repair etch damage seeH01L21/3105 and subgroups .	H01L21/02	H01L21/02		55
H01L21/02299	12	{pre-treatment}<br><br><u>NOTE</u><br><br>This group and subgroups cover treatments to improve adhesion or change the surface termination; for etching seeH01L21/306 and subgroups and H01L21/311 and subgroups. 	H01L21/02	H01L21/02		272
H01L21/02301	13	{in-situ cleaning}<br><br><u>NOTE</u><br><br>Subject matter relating to the cleaning processes for semiconductor devices in general is covered by H01L21/02041 and subgroups.	H01L21/02	H01L21/02		293
H01L21/02304	13	{formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers}	H01L21/02	H01L21/02		1311
H01L21/02307	13	{treatment by exposure to a liquid}	H01L21/02	H01L21/02		643
H01L21/0231	13	{treatment by exposure to electromagnetic radiation, e.g. UV light}	H01L21/02	H01L21/02		141
H01L21/02312	13	{treatment by exposure to a gas or vapour}	H01L21/02	H01L21/02		555
H01L21/02315	14	{treatment by exposure to a plasma}	H01L21/02	H01L21/02		986
H01L21/02318	12	{post-treatment}<br><br><u>NOTE</u><br><br>This group only covers processes that are part of the layer formation; treatments which are performed after completion of the insulating layer are covered by H01L21/3105 and subgroups. 	H01L21/02	H01L21/02		592
H01L21/02321	13	{introduction of substances into an already existing insulating layer (H01L21/02227 and subgroups take precedence)}<br><br><u>NOTE</u><br><br>Processes like the introduction of phosphorus into silicon oxide by diffusion, or doping of an already existing insulating layer are covered by this group and subgroups; for the method of introduction, seeH01L21/02337, H01L21/02343, H01L21/02345 and subgroups.	H01L21/02	H01L21/02		395
H01L21/02323	14	{introduction of oxygen}	H01L21/02	H01L21/02		360
H01L21/02326	15	{into a nitride layer, e.g. changing SiN to SiON}	H01L21/02	H01L21/02		507
H01L21/02329	14	{introduction of nitrogen}	H01L21/02	H01L21/02		174
H01L21/02332	15	{into an oxide layer, e.g. changing SiO to SiON}	H01L21/02	H01L21/02		552
H01L21/02334	13	{in-situ cleaning after layer formation, e.g. removing process residues}<br><br><u>NOTE</u><br><br>Subject matter relating to the cleaning processes for semiconductor devices in general is covered by H01L21/02041 and subgroups. 	H01L21/02	H01L21/02		177
H01L21/02337	13	{treatment by exposure to a gas or vapour}	H01L21/02	H01L21/02		1915
H01L21/0234	14	{treatment by exposure to a plasma}	H01L21/02	H01L21/02		2006
H01L21/02343	13	{treatment by exposure to a liquid}	H01L21/02	H01L21/02		464
H01L21/02345	13	{treatment by exposure to radiation, e.g. visible light}	H01L21/02	H01L21/02		236
H01L21/02348	14	{treatment by exposure to UV light}	H01L21/02	H01L21/02		814
H01L21/02351	14	{treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}	H01L21/02	H01L21/02		295
H01L21/02354	14	{using a coherent radiation, e.g. a laser}	H01L21/02	H01L21/02		114
H01L21/02356	13	{treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer}	H01L21/02	H01L21/02		654
H01L21/02359	13	{treatment to change the surface groups of the insulating layer}	H01L21/02	H01L21/02		207
H01L21/02362	13	{formation of intermediate layers, e.g. capping layers or diffusion barriers}	H01L21/02	H01L21/02		754
H01L21/02365	10	{Forming inorganic semiconducting materials on a substrate}	H01L21/02	H01L21/02		305
H01L21/02367	11	{Substrates}	H01L21/02	H01L21/02		64
H01L21/0237	12	{Materials}	H01L21/02	H01L21/02		1554
H01L21/02373	13	{Group 14 semiconducting materials}	H01L21/02	H01L21/02		56
H01L21/02376	14	{Carbon, e.g. diamond-like carbon}	H01L21/02	H01L21/02		289
H01L21/02378	14	{Silicon carbide}	H01L21/02	H01L21/02		1735
H01L21/02381	14	{Silicon, silicon germanium, germanium}	H01L21/02	H01L21/02		6885
H01L21/02384	14	{including tin}	H01L21/02	H01L21/02		18
H01L21/02387	13	{Group 13/15 materials}	H01L21/02	H01L21/02		104
H01L21/02389	14	{Nitrides}	H01L21/02	H01L21/02		1033
H01L21/02392	14	{Phosphides}	H01L21/02	H01L21/02		553
H01L21/02395	14	{Arsenides}	H01L21/02	H01L21/02		1365
H01L21/02398	14	{Antimonides}	H01L21/02	H01L21/02		76
H01L21/024	13	{Group 12/16 materials}	H01L21/02	H01L21/02		21
H01L21/02403	14	{Oxides}	H01L21/02	H01L21/02		160
H01L21/02406	14	{Sulfides}	H01L21/02	H01L21/02		22
H01L21/02409	14	{Selenides}	H01L21/02	H01L21/02		36
H01L21/02411	14	{Tellurides}	H01L21/02	H01L21/02		97
H01L21/02414	13	{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}	H01L21/02	H01L21/02		302
H01L21/02417	13	{Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}	H01L21/02	H01L21/02		74
H01L21/0242	13	{Crystalline insulating materials}	H01L21/02	H01L21/02		2975
H01L21/02422	13	{Non-crystalline insulating materials, e.g. glass, polymers}	H01L21/02	H01L21/02		2377
H01L21/02425	13	{Conductive materials, e.g. metallic silicides}	H01L21/02	H01L21/02		854
H01L21/02428	12	{Structure}	H01L21/02	H01L21/02		267
H01L21/0243	13	{Surface structure}	H01L21/02	H01L21/02		1336
H01L21/02433	12	{Crystal orientation}	H01L21/02	H01L21/02		2234
H01L21/02436	11	{Intermediate layers between substrates and deposited layers}	H01L21/02	H01L21/02		109
H01L21/02439	12	{Materials}	H01L21/02	H01L21/02		444
H01L21/02441	13	{Group 14 semiconducting materials}	H01L21/02	H01L21/02		20
H01L21/02444	14	{Carbon, e.g. diamond-like carbon}	H01L21/02	H01L21/02		356
H01L21/02447	14	{Silicon carbide}	H01L21/02	H01L21/02		645
H01L21/0245	14	{Silicon, silicon germanium, germanium}	H01L21/02	H01L21/02		2164
H01L21/02452	14	{including tin}	H01L21/02	H01L21/02		54
H01L21/02455	13	{Group 13/15 materials}	H01L21/02	H01L21/02		127
H01L21/02458	14	{Nitrides}	H01L21/02	H01L21/02		3777
H01L21/02461	14	{Phosphides}	H01L21/02	H01L21/02		519
H01L21/02463	14	{Arsenides}	H01L21/02	H01L21/02		1103
H01L21/02466	14	{Antimonides}	H01L21/02	H01L21/02		142
H01L21/02469	13	{Group 12/16 materials}	H01L21/02	H01L21/02		23
H01L21/02472	14	{Oxides}	H01L21/02	H01L21/02		363
H01L21/02474	14	{Sulfides}	H01L21/02	H01L21/02		104
H01L21/02477	14	{Selenides}	H01L21/02	H01L21/02		77
H01L21/0248	14	{Tellurides}	H01L21/02	H01L21/02		67
H01L21/02483	13	{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}	H01L21/02	H01L21/02		373
H01L21/02485	13	{Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}	H01L21/02	H01L21/02		252
H01L21/02488	13	{Insulating materials}	H01L21/02	H01L21/02		3098
H01L21/02491	13	{Conductive materials}	H01L21/02	H01L21/02		1082
H01L21/02494	12	{Structure}	H01L21/02	H01L21/02		423
H01L21/02496	13	{Layer structure}	H01L21/02	H01L21/02		326
H01L21/02499	14	{Monolayers}	H01L21/02	H01L21/02		233
H01L21/02502	14	{consisting of two layers}	H01L21/02	H01L21/02		1715
H01L21/02505	14	{consisting of more than two layers}	H01L21/02	H01L21/02		1753
H01L21/02507	15	{Alternating layers, e.g. superlattice}	H01L21/02	H01L21/02		1011
H01L21/0251	14	{Graded layers}	H01L21/02	H01L21/02		584
H01L21/02513	13	{Microstructure}	H01L21/02	H01L21/02		959
H01L21/02516	12	{Crystal orientation}	H01L21/02	H01L21/02		380
H01L21/02518	11	{Deposited layers}	H01L21/02	H01L21/02		109
H01L21/02521	12	{Materials}	H01L21/02	H01L21/02		1367
H01L21/02524	13	{Group 14 semiconducting materials}	H01L21/02	H01L21/02		79
H01L21/02527	14	{Carbon, e.g. diamond-like carbon}	H01L21/02	H01L21/02		1033
H01L21/02529	14	{Silicon carbide}	H01L21/02	H01L21/02		1834
H01L21/02532	14	{Silicon, silicon germanium, germanium}	H01L21/02	H01L21/02		11732
H01L21/02535	14	{including tin}	H01L21/02	H01L21/02		185
H01L21/02538	13	{Group 13/15 materials}	H01L21/02	H01L21/02		568
H01L21/0254	14	{Nitrides}	H01L21/02	H01L21/02		6324
H01L21/02543	14	{Phosphides}	H01L21/02	H01L21/02		1170
H01L21/02546	14	{Arsenides}	H01L21/02	H01L21/02		2503
H01L21/02549	14	{Antimonides}	H01L21/02	H01L21/02		306
H01L21/02551	13	{Group 12/16 materials}	H01L21/02	H01L21/02		190
H01L21/02554	14	{Oxides}	H01L21/02	H01L21/02		1845
H01L21/02557	14	{Sulfides}	H01L21/02	H01L21/02		439
H01L21/0256	14	{Selenides}	H01L21/02	H01L21/02		366
H01L21/02562	14	{Tellurides}	H01L21/02	H01L21/02		362
H01L21/02565	13	{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}	H01L21/02	H01L21/02		2470
H01L21/02568	13	{Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}	H01L21/02	H01L21/02		1466
H01L21/0257	12	{Doping during depositing}	H01L21/02	H01L21/02		488
H01L21/02573	13	{Conductivity type}	H01L21/02	H01L21/02		696
H01L21/02576	14	{N-type}	H01L21/02	H01L21/02		2659
H01L21/02579	14	{P-type}	H01L21/02	H01L21/02		2619
H01L21/02581	14	{Transition metal or rare earth elements}	H01L21/02	H01L21/02		531
H01L21/02584	13	{Delta-doping}	H01L21/02	H01L21/02		98
H01L21/02587	12	{Structure}	H01L21/02	H01L21/02		396
H01L21/0259	13	{Microstructure}	H01L21/02	H01L21/02		742
H01L21/02592	14	{amorphous}	H01L21/02	H01L21/02		1094
H01L21/02595	14	{polycrystalline}	H01L21/02	H01L21/02		1475
H01L21/02598	14	{monocrystalline}	H01L21/02	H01L21/02		1126
H01L21/02601	14	{Nanoparticles (fullerenes H10K85/211)}	H01L21/02	H01L21/02		731
H01L21/02603	14	{Nanowires}	H01L21/02	H01L21/02		1453
H01L21/02606	14	{Nanotubes (carbon nanotubes H10K85/211)}	H01L21/02	H01L21/02		215
H01L21/02609	12	{Crystal orientation}	H01L21/02	H01L21/02		990
H01L21/02612	11	{Formation types}	H01L21/02	H01L21/02		247
H01L21/02614	12	{Transformation of metal, e.g. oxidation, nitridation}	H01L21/02	H01L21/02		668
H01L21/02617	12	{Deposition types}	H01L21/02	H01L21/02		379
H01L21/0262	13	{Reduction or decomposition of gaseous compounds, e.g. CVD}	H01L21/02	H01L21/02		13014
H01L21/02623	13	{Liquid deposition}	H01L21/02	H01L21/02		207
H01L21/02625	14	{using melted materials}	H01L21/02	H01L21/02		703
H01L21/02628	14	{using solutions}	H01L21/02	H01L21/02		1839
H01L21/02631	13	{Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}	H01L21/02	H01L21/02		3750
H01L21/02634	13	{Homoepitaxy}	H01L21/02	H01L21/02		489
H01L21/02636	13	{Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}	H01L21/02	H01L21/02		856
H01L21/02639	14	{Preparation of substrate for selective deposition}	H01L21/02	H01L21/02		2489
H01L21/02642	15	{Mask materials other than SiO2 or SiN}	H01L21/02	H01L21/02		455
H01L21/02645	15	{Seed materials}	H01L21/02	H01L21/02		547
H01L21/02647	14	{Lateral overgrowth}	H01L21/02	H01L21/02		839
H01L21/0265	15	{Pendeoepitaxy}	H01L21/02	H01L21/02		271
H01L21/02653	14	{Vapour-liquid-solid growth}	H01L21/02	H01L21/02		193
H01L21/02656	11	{Special treatments}	H01L21/02	H01L21/02		174
H01L21/02658	12	{Pretreatments (cleaning in general H01L21/02041)}	H01L21/02	H01L21/02		1707
H01L21/02661	13	{In-situ cleaning}	H01L21/02	H01L21/02		545
H01L21/02664	12	{Aftertreatments (planarisation in general H01L21/304)}	H01L21/02	H01L21/02		1564
H01L21/02667	13	{Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}	H01L21/02	H01L21/02		1884
H01L21/02669	14	{using crystallisation inhibiting elements}	H01L21/02	H01L21/02		29
H01L21/02672	14	{using crystallisation enhancing elements}	H01L21/02	H01L21/02		923
H01L21/02675	14	{using laser beams}	H01L21/02	H01L21/02		1513
H01L21/02678	15	{Beam shaping, e.g. using a mask}	H01L21/02	H01L21/02		624
H01L21/0268	16	{Shape of mask}	H01L21/02	H01L21/02		258
H01L21/02683	15	{Continuous wave laser beam}	H01L21/02	H01L21/02		522
H01L21/02686	15	{Pulsed laser beam}	H01L21/02	H01L21/02		1212
H01L21/02689	14	{using particle beams}	H01L21/02	H01L21/02		330
H01L21/02691	14	{Scanning of a beam}	H01L21/02	H01L21/02		1062
H01L21/02694	13	{Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}	H01L21/02	H01L21/02		430
H01L21/02697	10	{Forming conducting materials on a substrate}	H01L21/02	H01L21/02		482
H01L21/027	9	Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34{(photographic masks or originals per seG03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00)}	H01L21/027	H01L21/027		5596
H01L21/0271	10	{comprising organic layers}	H01L21/027	H01L21/027		1771
H01L21/0272	11	{for lift-off processes}	H01L21/027	H01L21/027		721
H01L21/0273	11	{characterised by the treatment of photoresist layers}	H01L21/027	H01L21/027		4325
H01L21/0274	12	{Photolithographic processes}	H01L21/027	H01L21/027		9008
H01L21/0275	13	{using lasers}	H01L21/027	H01L21/027		799
H01L21/0276	13	{using an anti-reflective coating (anti-reflective coating for lithography in general G03F7/09)}	H01L21/027	H01L21/027		1961
H01L21/0277	12	{Electrolithographic processes}	H01L21/027	H01L21/027		247
H01L21/0278	12	{R&#246;ntgenlithographic or X-ray lithographic processes}	H01L21/027	H01L21/027		30
H01L21/0279	12	{Ionlithographic processes}	H01L21/027	H01L21/027		94
H01L21/033	10	comprising inorganic layers	H01L21/033	H01L21/033		1031
H01L21/0331	11	{for lift-off processes}	H01L21/033	H01L21/033		260
H01L21/0332	11	{characterised by their composition, e.g. multilayer masks, materials}	H01L21/033	H01L21/033		2782
H01L21/0334	11	{characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}	H01L21/033	H01L21/033		446
H01L21/0335	12	{characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}	H01L21/033	H01L21/033		420
H01L21/0337	12	{characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}	H01L21/033	H01L21/033		6761
H01L21/0338	12	{Process specially adapted to improve the resolution of the mask}	H01L21/033	H01L21/033		1816
H01L21/04	9	the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer	H01L21/04	H01L21/04		167
H01L21/0405	10	{the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon}<br><br><u>NOTE</u><br><br>This group covers passivation.	H01L21/04	H01L21/04		132
H01L21/041	11	{Making n- or p-doped regions}	H01L21/04	H01L21/04		118
H01L21/0415	12	{using ion implantation}	H01L21/04	H01L21/04		126
H01L21/042	11	{Changing their shape, e.g. forming recesses (etching of the semiconductor body H01L21/302)}	H01L21/04	H01L21/04		97
H01L21/0425	11	{Making electrodes}	H01L21/04	H01L21/04		37
H01L21/043	12	{Ohmic electrodes}	H01L21/04	H01L21/04		115
H01L21/0435	12	{Schottky electrodes}	H01L21/04	H01L21/04		33
H01L21/044	12	{Conductor-insulator-semiconductor electrodes}	H01L21/04	H01L21/04		79
H01L21/0445	10	{the devices having semiconductor bodies comprising crystalline silicon carbide}	H01L21/04	H01L21/04		476
H01L21/045	11	{passivating silicon carbide surfaces}	H01L21/04	H01L21/04		153
H01L21/0455	11	{Making n or p doped regions or layers, e.g. using diffusion}	H01L21/04	H01L21/04		158
H01L21/046	12	{using ion implantation}<br><br><u>NOTE</u><br><br>Processes where ion implantation of boron and subsequent annealing does not produce a p-doped region are classified elsewhere, e.g. H01L21/0445.	H01L21/04	H01L21/04		699
H01L21/0465	13	{using masks}	H01L21/04	H01L21/04		481
H01L21/047	13	{characterised by the angle between the ion beam and the crystal planes or the main crystal surface}	H01L21/04	H01L21/04		201
H01L21/0475	11	{Changing the shape of the semiconductor body, e.g. forming recesses, (etching of the semiconductor body H01L21/302)}	H01L21/04	H01L21/04		489
H01L21/048	11	{Making electrodes}	H01L21/04	H01L21/04		36
H01L21/0485	12	{Ohmic electrodes}	H01L21/04	H01L21/04		629
H01L21/049	12	{Conductor-insulator-semiconductor electrodes, e.g. MIS contacts}	H01L21/04	H01L21/04		608
H01L21/0495	12	{Schottky electrodes}	H01L21/04	H01L21/04		207
H01L21/18	10	the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials {(H01L21/041 - H01L21/0425, H01L21/045 - H01L21/048 take precedence)}<br><br><u>NOTE</u><br><br>This group covers also processes and apparatus which, by using the appropriate technology, are clearly suitable for manufacture or treatment of devices whose bodies comprise elements of Group IV of the Periodic Table or AIIIBV compounds, even if the material used is not explicitly specified.	H01L21/18	H01L21/18		2988
H01L21/182	11	{Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD}	H01L21/18	H01L21/18		69
H01L21/185	11	{Joining of semiconductor bodies for junction formation}	H01L21/18	H01L21/18		985
H01L21/187	12	{by direct bonding}	H01L21/18	H01L21/18		1226
H01L21/20	11	Deposition of semiconductor materials on a substrate, e.g. epitaxial growth {solid phase epitaxy}	H01L21/20	H01L21/20		2859
H01L21/2003	12	{characterised by the substrate}	H01L21/20	H01L21/20		66
H01L21/2007	13	{Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer (H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187)}	H01L21/20	H01L21/20		1357
H01L21/2011	13	{the substrate being of crystalline insulating material, e.g. sapphire}	H01L21/20	H01L21/20		56
H01L21/2015	13	{the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy}	H01L21/20	H01L21/20		333
H01L21/22	11	Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; {Interactions between two or more impurities; Redistribution of impurities}	H01L21/22	H01L21/22		1436
H01L21/2205	12	{from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping}	H01L21/22	H01L21/22		185
H01L21/221	12	{of killers}	H01L21/22	H01L21/22		171
H01L21/2215	13	{in AIIIBV compounds}	H01L21/22	H01L21/22		12
H01L21/222	12	{Lithium-drift}	H01L21/22	H01L21/22		27
H01L21/2225	12	{Diffusion sources}	H01L21/22	H01L21/22		378
H01L21/223	12	using diffusion into or out of a solid from or into a gaseous phase {(H01L21/221&#160;-&#160;H01L21/222 take precedence; diffusion through an applied layer H01L21/225)}	H01L21/223	H01L21/223		804
H01L21/2233	13	{Diffusion into or out of AIIIBV compounds}	H01L21/223	H01L21/223		152
H01L21/2236	13	{from or into a plasma phase}	H01L21/223	H01L21/223		542
H01L21/225	12	using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer {(H01L21/221&#160;-&#160;H01L21/222 take precedence)}	H01L21/225	H01L21/225		491
H01L21/2251	13	{Diffusion into or out of group IV semiconductors}<br><br><u>NOTE</u><br><br>In groups H01L21/2254 - H01L21/2257 one should consider the main compositional parts of the applied layer just before the diffusion step	H01L21/225	H01L21/225		186
H01L21/2252	14	{using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase}	H01L21/225	H01L21/225		298
H01L21/2253	15	{by ion implantation}	H01L21/225	H01L21/225		691
H01L21/2254	14	{from or through or into an applied layer, e.g. photoresist, nitrides}	H01L21/225	H01L21/225		612
H01L21/2255	15	{the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides}	H01L21/225	H01L21/225		848
H01L21/2256	16	{through the applied layer}	H01L21/225	H01L21/225		182
H01L21/2257	15	{the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon}	H01L21/225	H01L21/225		692
H01L21/2258	13	{Diffusion into or out of AIIIBV compounds}	H01L21/225	H01L21/225		240
H01L21/228	12	using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes {(H01L21/221&#160;-&#160;H01L21/222 take precedence)}	H01L21/228	H01L21/228		415
H01L21/24	11	Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body {(H01L21/182 takes precedence)}	H01L21/24	H01L21/24		1358
H01L21/242	12	{Alloying of doping materials with AIIIBV compounds}	H01L21/24	H01L21/24		18
H01L21/244	12	{Alloying of electrode materials}	H01L21/24	H01L21/24		36
H01L21/246	13	{with AIIIBV compounds}	H01L21/24	H01L21/24		21
H01L21/248	12	{Apparatus specially adapted for the alloying}	H01L21/24	H01L21/24		9
H01L21/26	11	Bombardment with radiation {(H01L21/3105 takes precedence)}	H01L21/26	H01L21/26		446
H01L21/2605	12	{using natural radiation, e.g. alpha, beta or gamma radiation}	H01L21/26	H01L21/26		32
H01L21/261	12	to produce a nuclear reaction transmuting chemical elements	H01L21/261	H01L21/261		90
H01L21/263	12	with high-energy radiation (H01L21/261 takes precedence)	H01L21/263	H01L21/263		666
H01L21/2633	13	{for etching, e.g. sputteretching}	H01L21/263	H01L21/263		233
H01L21/2636	13	{for heating, e.g. electron beam heating}	H01L21/263	H01L21/263		272
H01L21/265	13	producing ion implantation	H01L21/265	H01L21/265		4567
H01L21/26506	14	{in group IV semiconductors}	H01L21/265	H01L21/265		3159
H01L21/26513	15	{of electrically active species}	H01L21/265	H01L21/265		3952
H01L21/2652	16	{Through-implantation}	H01L21/265	H01L21/265		1031
H01L21/26526	15	{Recoil-implantation}	H01L21/265	H01L21/265		57
H01L21/26533	15	{of electrically inactive species in silicon to make buried insulating layers}	H01L21/265	H01L21/265		346
H01L21/2654	14	{in AIIIBV compounds}	H01L21/265	H01L21/265		325
H01L21/26546	15	{of electrically active species}	H01L21/265	H01L21/265		333
H01L21/26553	16	{Through-implantation}	H01L21/265	H01L21/265		90
H01L21/2656	15	{characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped}	H01L21/265	H01L21/265		48
H01L21/26566	14	{of a cluster, e.g. using a gas cluster ion beam}	H01L21/265	H01L21/265		206
H01L2021/26573	14	{in diamond}	H01L21/265	H01L21/265		15
H01L21/2658	14	{of a molecular ion, e.g. decaborane}	H01L21/265	H01L21/265		839
H01L21/26586	14	{characterised by the angle between the ion beam and the crystal planes or the main crystal surface}	H01L21/265	H01L21/265		3030
H01L21/26593	14	{at a temperature lower than room temperature}	H01L21/265	H01L21/265		120
H01L21/266	14	using masks {(H01L21/26586 takes precedence)}	H01L21/266	H01L21/266		3396
H01L21/268	13	using electromagnetic radiation, e.g. laser radiation	H01L21/268	H01L21/268		4203
H01L21/2683	14	{using X-ray lasers}	H01L21/268	H01L21/268		30
H01L21/2686	14	{using incoherent radiation}	H01L21/268	H01L21/268		417
H01L21/28	11	Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268	H01L21/28	H01L21/28		5791
H01L21/28008	12	{Making conductor-insulator-semiconductor electrodes}	H01L21/28	H01L21/28		1181
H01L21/28017	13	{the insulator being formed after the semiconductor body, the semiconductor being silicon}<br><br><u>NOTE</u><br><br>This group covers deposition of the insulators, including epitaxial insulators, and the conductors within the same process or chamber.	H01L21/28	H01L21/28		210
H01L21/28026	14	{characterised by the conductor (H01L21/28176 takes precedence)}<br><br><u>NOTE</u><br><br>When the final conductor comprises a superconductor, subject matter is not classified according to the subgroups H01L21/28035 - H01L21/28097. Instead, it is classified in H01L21/28026.	H01L21/28	H01L21/28		228
H01L21/28035	15	{the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities (H01L21/28105 takes precedence)}<br><br><u>NOTE</u><br><br>A very thin, e.g. silicon, adhesion or seed layer is not considered as the one next to the insulator.	H01L21/28	H01L21/28		1354
H01L21/28044	16	{the conductor comprising at least another non-silicon conductive layer}	H01L21/28	H01L21/28		402
H01L21/28052	17	{the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer (formed by metal ion implantation H01L21/28044)}	H01L21/28	H01L21/28		1551
H01L21/28061	17	{the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction (H01L21/28052 takes precedence)}<br><br><u>NOTE</u><br><br>To assess the coverage of groups H01L21/28052 and H01L21/28061, barrier layers, e.g. TaSiN, are not considered. 	H01L21/28	H01L21/28		1167
H01L21/2807	15	{the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si}	H01L21/28	H01L21/28		229
H01L21/28079	15	{the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al}	H01L21/28	H01L21/28		737
H01L21/28088	15	{the final conductor layer next to the insulator being a composite, e.g. TiN}	H01L21/28	H01L21/28		1797
H01L21/28097	15	{the final conductor layer next to the insulator being a metallic silicide}	H01L21/28	H01L21/28		689
H01L21/28105	15	{the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step}	H01L21/28	H01L21/28		231
H01L21/28114	15	{characterised by the sectional shape, e.g. T, inverted-T}<br><br><u>NOTE</u><br><br>Documents are also classified in groups H01L21/28035&#160;-&#160;H01L21/28105 when the composition is also relevant.	H01L21/28	H01L21/28		1213
H01L21/28123	15	{Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects}	H01L21/28	H01L21/28		1479
H01L21/28132	16	{conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating}	H01L21/28	H01L21/28		310
H01L21/28141	16	{insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating}	H01L21/28	H01L21/28		661
H01L21/2815	16	{part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating}	H01L21/28	H01L21/28		295
H01L21/28158	14	{Making the insulator}	H01L21/28	H01L21/28		583
H01L21/28167	15	{on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation}	H01L21/28	H01L21/28		501
H01L21/28176	16	{with a treatment, e.g. annealing, after the formation of the definitive gate conductor}	H01L21/28	H01L21/28		724
H01L21/28185	16	{with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor}	H01L21/28	H01L21/28		1719
H01L21/28194	16	{by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition (H01L21/28202 takes precedence)}	H01L21/28	H01L21/28		2049
H01L21/28202	16	{in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN}	H01L21/28	H01L21/28		1615
H01L21/28211	16	{in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer (H01L21/28194 and H01L21/28202 take precedence)}<br><br><u>NOTE</u><br><br>Thin oxidation layers used as a barrier layer or as a buffer layer, e.g. before the fomation of a high-k insulator, are classified here only if important per se.	H01L21/28	H01L21/28		810
H01L21/2822	15	{with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator}	H01L21/28	H01L21/28		225
H01L21/28229	15	{by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer}	H01L21/28	H01L21/28		262
H01L21/28238	15	{with sacrificial oxide}	H01L21/28	H01L21/28		280
H01L21/28247	14	{passivation or protection of the electrode, e.g. using re-oxidation}	H01L21/28	H01L21/28		1205
H01L21/28255	13	{the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC}	H01L21/28	H01L21/28		269
H01L21/28264	13	{the insulator being formed after the semiconductor body, the semiconductor being a III-V compound}	H01L21/28	H01L21/28		419
H01L21/283	12	Deposition of conductive or insulating materials for electrodes {conducting electric current}	H01L21/283	H01L21/283		1098
H01L21/285	13	from a gas or vapour, e.g. condensation	H01L21/285	H01L21/285		842
H01L21/28506	14	{of conductive layers}	H01L21/285	H01L21/285		288
H01L21/28512	15	{on semiconductor bodies comprising elements of Group IV of the Periodic Table}	H01L21/285	H01L21/285		503
H01L21/28518	16	{the conductive layers comprising silicides (H01L21/28537 takes precedence)}	H01L21/285	H01L21/285		4137
H01L21/28525	16	{the conductive layers comprising semiconducting material (H01L21/28518, H01L21/28537 take precedence)}	H01L21/285	H01L21/285		1199
H01L21/28531	17	{Making of side-wall contacts}	H01L21/285	H01L21/285		50
H01L21/28537	16	{Deposition of Schottky electrodes}	H01L21/285	H01L21/285		240
H01L21/2855	16	{by physical means, e.g. sputtering, evaporation (H01L21/28518&#160;-&#160;H01L21/28537 and H01L21/28568 take precedence)}	H01L21/285	H01L21/285		2121
H01L21/28556	16	{by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD (H01L21/28518&#160;-&#160;H01L21/28537 and H01L21/28568 take precedence)}	H01L21/285	H01L21/285		3362
H01L21/28562	17	{Selective deposition}	H01L21/285	H01L21/285		1621
H01L21/28568	16	{the conductive layers comprising transition metals (H01L21/28518 takes precedence)}	H01L21/285	H01L21/285		1204
H01L21/28575	15	{on semiconductor bodies comprising AIIIBV compounds}	H01L21/285	H01L21/285		722
H01L21/28581	16	{Deposition of Schottky electrodes}	H01L21/285	H01L21/285		327
H01L21/28587	16	{characterised by the sectional shape, e.g. T, inverted T}	H01L21/285	H01L21/285		578
H01L21/28593	17	{asymmetrical sectional shape}	H01L21/285	H01L21/285		80
H01L21/288	13	from a liquid, e.g. electrolytic deposition	H01L21/288	H01L21/288		2286
H01L21/2885	14	{using an external electrical current, i.e. electro-deposition}	H01L21/288	H01L21/288		1922
H01L21/30	11	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20&#160;-&#160;H01L21/26(manufacture of electrodes thereon H01L21/28)	H01L21/30	H01L21/30		3208
H01L21/3003	12	{Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}	H01L21/30	H01L21/30		422
H01L21/3006	13	{of AIIIBV compounds}	H01L21/30	H01L21/30		32
H01L21/302	12	to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting	H01L21/302	H01L21/302		3775
H01L21/304	13	Mechanical treatment, e.g. grinding, polishing, cutting {(H01L21/30625 takes precedence)}	H01L21/304	H01L21/304		10862
H01L21/3043	14	{Making grooves, e.g. cutting}	H01L21/304	H01L21/304		1143
H01L21/3046	14	{using blasting, e.g. sand-blasting (H01L21/2633 takes precedence)}	H01L21/304	H01L21/304		358
H01L21/306	13	Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L21/31)	H01L21/306	H01L21/306		3442
H01L21/30604	14	{Chemical etching}	H01L21/306	H01L21/306		5400
H01L21/30608	15	{Anisotropic liquid etching (H01L21/3063 takes precedence)}	H01L21/306	H01L21/306		1081
H01L21/30612	15	{Etching of AIIIBV compounds}	H01L21/306	H01L21/306		592
H01L21/30617	16	{Anisotropic liquid etching}	H01L21/306	H01L21/306		208
H01L21/30621	16	{Vapour phase etching}	H01L21/306	H01L21/306		561
H01L21/30625	14	{With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}	H01L21/306	H01L21/306		3842
H01L21/3063	14	Electrolytic etching	H01L21/3063	H01L21/3063		652
H01L21/30635	15	{of AIIIBV compounds}	H01L21/3063	H01L21/3063		141
H01L21/3065	14	Plasma etching; Reactive-ion etching	H01L21/3065	H01L21/3065		11146
H01L21/30655	15	{comprising alternated and repeated etching and passivation steps, e.g. Bosch process}	H01L21/3065	H01L21/3065		771
H01L21/308	14	using masks (H01L21/3063, H01L21/3065 take precedence)	H01L21/308	H01L21/308		2283
H01L21/3081	15	{characterised by their composition, e.g. multilayer masks, materials}	H01L21/308	H01L21/308		2424
H01L21/3083	15	{characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}	H01L21/308	H01L21/308		991
H01L21/3085	16	{characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}	H01L21/308	H01L21/308		551
H01L21/3086	16	{characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}	H01L21/308	H01L21/308		3270
H01L21/3088	16	{Process specially adapted to improve the resolution of the mask}	H01L21/308	H01L21/308		595
H01L21/31	12	to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L21/56); After treatment of these layers; Selection of materials for these layers	H01L21/31	H01L21/31		2760
H01L21/3105	13	After-treatment	H01L21/3105	H01L21/3105		2256
H01L21/31051	14	{Planarisation of the insulating layers (H01L21/31058 takes precedence)}	H01L21/3105	H01L21/3105		1880
H01L21/31053	15	{involving a dielectric removal step}	H01L21/3105	H01L21/3105		4692
H01L21/31055	16	{the removal being a chemical etching step, e.g. dry etching (etching per seH01L21/311)}	H01L21/3105	H01L21/3105		879
H01L21/31056	17	{the removal being a selective chemical etching step, e.g. selective dry etching through a mask}	H01L21/3105	H01L21/3105		324
H01L21/31058	14	{of organic layers}	H01L21/3105	H01L21/3105		965
H01L21/311	14	Etching the insulating layers {by chemical or physical means (H01L21/31058 takes precedence)}	H01L21/311	H01L21/311		1308
H01L21/31105	15	{Etching inorganic layers}	H01L21/311	H01L21/311		820
H01L21/31111	16	{by chemical means}	H01L21/311	H01L21/311		6037
H01L21/31116	17	{by dry-etching}	H01L21/311	H01L21/311		10568
H01L21/31122	18	{of layers not containing Si, e.g. PZT, Al2O3}	H01L21/311	H01L21/311		1034
H01L21/31127	15	{Etching organic layers}	H01L21/311	H01L21/311		274
H01L21/31133	16	{by chemical means}	H01L21/311	H01L21/311		1242
H01L21/31138	17	{by dry-etching}	H01L21/311	H01L21/311		2952
H01L21/31144	15	{using masks}	H01L21/311	H01L21/311		10636
H01L21/3115	14	Doping the insulating layers	H01L21/3115	H01L21/3115		335
H01L21/31155	15	{by ion implantation}	H01L21/3115	H01L21/3115		948
H01L21/312	13	Organic layers, e.g. photoresist (H01L21/3105, H01L21/32 take precedence; {photoresists per seG03C})<br><br><u>WARNING</u><br>Groups H01L21/312 &#8211; H01L21/3128  are no longer used for the classification of documents as of  2011-05-01. The content of these groups is being reclassified into groups H01L21/02107 &#8211; H01L21/02326.<br>Groups H01L21/02107 &#8211; H01L21/02326  should be considered in order to perform a complete search.	H01L21/312	H01L21/312		785
H01L21/3121	14	{Layers comprising organo-silicon compounds}	H01L21/312	H01L21/312		339
H01L21/3122	15	{layers comprising polysiloxane compounds}	H01L21/312	H01L21/312		520
H01L21/3124	16	{layers comprising hydrogen silsesquioxane}	H01L21/312	H01L21/312		187
H01L21/3125	15	{layers comprising silazane compounds}	H01L21/312	H01L21/312		126
H01L21/3127	14	{Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene}	H01L21/312	H01L21/312		206
H01L21/3128	14	{by Langmuir-Blodgett techniques}	H01L21/312	H01L21/312		21
H01L21/314	13	Inorganic layers (H01L21/3105, H01L21/32 take precedence)<br><br><u>WARNING</u><br>Groups H01L21/314 &#8211; H01L21/3185  are no longer used for the classification of documents as of 2011-05-01. The content of these group is being reclassified into group H01L21/02107 &#8211; H01L21/02326.<br>Groups H01L21/02107 &#8211; H01L21/02326   should be considered in order to perform a complete search.	H01L21/314	H01L21/314		329
H01L21/3141	14	{Deposition using atomic layer deposition techniques [ALD]}	H01L21/314	H01L21/314		522
H01L21/3142	15	{of nano-laminates, e.g. alternating layers of Al203-Hf02}	H01L21/314	H01L21/314		126
H01L21/3143	14	{composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers}	H01L21/314	H01L21/314		250
H01L21/3144	15	{on silicon}	H01L21/314	H01L21/314		712
H01L21/3145	15	{formed by deposition from a gas or vapour}	H01L21/314	H01L21/314		428
H01L21/3146	14	{Carbon layers, e.g. diamond-like layers}	H01L21/314	H01L21/314		197
H01L21/3147	14	{Epitaxial deposition of insulating materials}	H01L21/314	H01L21/314		19
H01L21/3148	14	{Silicon Carbide layers}	H01L21/314	H01L21/314		159
H01L2021/3149	15	{Langmuir-Blodgett techniques}	H01L21/314	H01L21/314		
H01L21/316	14	composed of oxides or glassy oxides or oxide based glass<br><br><u>WARNING</u><br>Group H01L21/316  is no longer used for the classification of documents as of 2011-05-01. The content of this group is being reclassified into groups H01L21/02107 &#8211; H01L21/02326.<br>Groups H01L21/02107 &#8211; H01L21/02326 should be considered in order to perform a complete search.	H01L21/316	H01L21/316		585
H01L21/31604	15	{Deposition from a gas or vapour (H01L21/31691, H01L21/31695 take precedence)}	H01L21/316	H01L21/316		793
H01L21/31608	16	{Deposition of SiO2(H01L21/31625, H01L21/31629 and H01L21/31633 take precedence)}	H01L21/316	H01L21/316		329
H01L21/31612	17	{on a silicon body}	H01L21/316	H01L21/316		1203
H01L21/31616	16	{Deposition of Al2O3}	H01L21/316	H01L21/316		202
H01L21/3162	17	{on a silicon body}	H01L21/316	H01L21/316		152
H01L21/31625	16	{Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG}	H01L21/316	H01L21/316		348
H01L21/31629	16	{Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide}	H01L21/316	H01L21/316		255
H01L21/31633	16	{Deposition of carbon doped silicon oxide, e.g. SiOC}	H01L21/316	H01L21/316		445
H01L21/31637	16	{Deposition of Tantalum oxides, e.g. Ta2O5}	H01L21/316	H01L21/316		146
H01L21/31641	16	{Deposition of Zirconium oxides, e.g. ZrO2}	H01L21/316	H01L21/316		219
H01L21/31645	16	{Deposition of Hafnium oxides, e.g. HfO2}	H01L21/316	H01L21/316		422
H01L21/3165	15	{formed by oxidation (H01L21/31691, H01L21/31695 take precedence)}	H01L21/316	H01L21/316		41
H01L21/31654	16	{of semiconductor materials, e.g. the body itself}	H01L21/316	H01L21/316		133
H01L21/31658	17	{by thermal oxidation, e.g. of SiGe}	H01L21/316	H01L21/316		78
H01L21/31662	18	{of silicon in uncombined form}	H01L21/316	H01L21/316		810
H01L21/31666	18	{of AIII BV compounds}	H01L21/316	H01L21/316		33
H01L21/3167	17	{of anodic oxidation}	H01L21/316	H01L21/316		10
H01L21/31675	18	{of silicon}	H01L21/316	H01L21/316		83
H01L21/31679	18	{of AIII BV compounds}	H01L21/316	H01L21/316		33
H01L21/31683	16	{of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures}	H01L21/316	H01L21/316		263
H01L21/31687	17	{by anodic oxidation}	H01L21/316	H01L21/316		82
H01L21/31691	15	{with perovskite structure}	H01L21/316	H01L21/316		854
H01L21/31695	15	{Deposition of porous oxides or porous glassy oxides or oxide based porous glass}	H01L21/316	H01L21/316		557
H01L21/318	14	composed of nitrides<br><br><u>WARNING</u><br>Group H01L21/318  is no longer used for the classification of documents as of 2011-05-01. The content of this group is being reclassified into groups H01L21/02107 &#8211; H01L21/02326.<br>Groups H01L21/02107 &#8211; H01L21/02326  should be considered in order to perform a complete search.	H01L21/318	H01L21/318		293
H01L21/3185	15	{of siliconnitrides}	H01L21/318	H01L21/318		1136
H01L21/32	13	using masks	H01L21/32	H01L21/32		1284
H01L21/3205	13	Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28)	H01L21/3205	H01L21/3205		1542
H01L21/32051	14	{Deposition of metallic or metal-silicide layers}	H01L21/3205	H01L21/3205		1508
H01L21/32053	15	{of metal-silicide layers}	H01L21/3205	H01L21/3205		440
H01L21/32055	14	{Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers}	H01L21/3205	H01L21/3205		1665
H01L21/32056	14	{Deposition of conductive or semi-conductive organic layers (H01L21/32058 takes precedence)}	H01L21/3205	H01L21/3205		69
H01L21/32058	14	{Deposition of superconductive layers}	H01L21/3205	H01L21/3205		20
H01L21/321	14	After treatment	H01L21/321	H01L21/321		1185
H01L21/32105	15	{Oxidation of silicon-containing layers}	H01L21/321	H01L21/321		475
H01L21/3211	15	{Nitridation of silicon-containing layers}	H01L21/321	H01L21/321		213
H01L21/32115	15	{Planarisation}	H01L21/321	H01L21/321		729
H01L21/3212	16	{by chemical mechanical polishing [CMP]}	H01L21/321	H01L21/321		5082
H01L21/32125	17	{by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP}	H01L21/321	H01L21/321		190
H01L21/3213	15	Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer	H01L21/3213	H01L21/3213		1304
H01L21/32131	16	{by physical means only}	H01L21/3213	H01L21/3213		241
H01L21/32132	17	{of silicon-containing layers}	H01L21/3213	H01L21/3213		63
H01L21/32133	16	{by chemical means only}	H01L21/3213	H01L21/3213		718
H01L21/32134	17	{by liquid etching only}	H01L21/3213	H01L21/3213		2916
H01L21/32135	17	{by vapour etching only}	H01L21/3213	H01L21/3213		1621
H01L21/32136	18	{using plasmas}	H01L21/3213	H01L21/3213		3298
H01L21/32137	19	{of silicon-containing layers}	H01L21/3213	H01L21/3213		1931
H01L21/32138	18	{pre- or post-treatments, e.g. anti-corrosion processes}	H01L21/3213	H01L21/3213		201
H01L21/32139	16	{using masks}	H01L21/3213	H01L21/3213		6174
H01L21/3215	15	Doping the layers	H01L21/3215	H01L21/3215		249
H01L21/32155	16	{Doping polycristalline - or amorphous silicon layers}	H01L21/3215	H01L21/3215		720
H01L21/322	12	to modify their internal properties, e.g. to produce internal imperfections	H01L21/322	H01L21/322		377
H01L21/3221	13	{of silicon bodies, e.g. for gettering}	H01L21/322	H01L21/322		969
H01L21/3223	14	{using cavities formed by hydrogen or noble gas ion implantation}	H01L21/322	H01L21/322		78
H01L21/3225	14	{Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering (H01L21/3226 takes precedence)}<br><br><u>NOTE</u><br><br>Gettering using both extrinsic and intrinsic gettering techniques is classified in both H01L21/3221 and H01L21/3225.	H01L21/322	H01L21/322		532
H01L21/3226	14	{of silicon on insulator}	H01L21/322	H01L21/322		334
H01L21/3228	13	{of AIIIBV compounds, e.g. to make them semi-insulating}	H01L21/322	H01L21/322		79
H01L21/324	12	Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L21/20&#160;-&#160;H01L21/288 and H01L21/302&#160;-&#160;H01L21/322 take precedence)	H01L21/324	H01L21/324		9708
H01L21/3242	13	{for the formation of PN junctions without addition of impurities (H01L21/22 takes precedence)}	H01L21/324	H01L21/324		57
H01L21/3245	13	{of AIIIBV compounds}	H01L21/324	H01L21/324		444
H01L21/3247	13	{for altering the shape, e.g. smoothing the surface}<br><br><u>WARNING</u><br>Group H01L21/3247  is incomplete pending reclassification of documents from group H01L21/324. <br>Groups H01L21/324  and H01L21/3247 should be considered in order to perform a complete search.	H01L21/324	H01L21/324		436
H01L21/326	12	Application of electric currents or fields, e.g. for electroforming (H01L21/20&#160;-&#160;H01L21/288 and H01L21/302&#160;-&#160;H01L21/324 take precedence)	H01L21/326	H01L21/326		270
H01L21/34	10	the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials	H01L21/34	H01L21/34		489
H01L21/38	11	Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions	H01L21/38	H01L21/38		65
H01L21/383	12	using diffusion into or out of a solid from or into a gaseous phase	H01L21/383	H01L21/383		89
H01L21/385	12	using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer	H01L21/385	H01L21/385		124
H01L21/388	12	using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes	H01L21/388	H01L21/388		37
H01L21/40	11	Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body	H01L21/40	H01L21/40		41
H01L21/42	11	Bombardment with radiation	H01L21/42	H01L21/42		55
H01L21/423	12	with high-energy radiation	H01L21/423	H01L21/423		35
H01L21/425	13	producing ion implantation	H01L21/425	H01L21/425		231
H01L21/426	14	using masks	H01L21/426	H01L21/426		67
H01L21/428	13	using electromagnetic radiation, e.g. laser radiation	H01L21/428	H01L21/428		153
H01L21/44	11	Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38&#160;-&#160;H01L21/428	H01L21/44	H01L21/44		328
H01L21/441	12	Deposition of conductive or insulating materials for electrodes	H01L21/441	H01L21/441		196
H01L21/443	13	from a gas or vapour, e.g. condensation	H01L21/443	H01L21/443		210
H01L21/445	13	from a liquid, e.g. electrolytic deposition	H01L21/445	H01L21/445		75
H01L21/447	12	involving the application of pressure, e.g. thermo-compression bonding	H01L21/447	H01L21/447		79
H01L21/449	12	involving the application of mechanical vibrations, e.g. ultrasonic vibrations	H01L21/449	H01L21/449		49
H01L21/46	11	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428(manufacture of electrodes thereon H01L21/44)	H01L21/46	H01L21/46		87
H01L21/461	12	to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting	H01L21/461	H01L21/461		163
H01L21/463	13	Mechanical treatment, e.g. grinding, ultrasonic treatment	H01L21/463	H01L21/463		137
H01L21/465	13	Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L21/469)	H01L21/465	H01L21/465		402
H01L21/467	14	using masks	H01L21/467	H01L21/467		170
H01L21/469	13	to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L21/56); After-treatment of these layers	H01L21/469	H01L21/469		69
H01L21/47	14	Organic layers, e.g. photoresist (H01L21/475, H01L21/4757 take precedence)	H01L21/47	H01L21/47		78
H01L21/471	14	Inorganic layers (H01L21/475, H01L21/4757 take precedence)	H01L21/471	H01L21/471		52
H01L21/473	15	composed of oxides or glassy oxides or oxide based glass	H01L21/473	H01L21/473		59
H01L21/475	14	using masks	H01L21/475	H01L21/475		44
H01L21/4757	14	After-treatment	H01L21/4757	H01L21/4757		21
H01L21/47573	15	{Etching the layer}	H01L21/4757	H01L21/4757		160
H01L21/47576	15	{Doping the layer}	H01L21/4757	H01L21/4757		25
H01L21/4763	13	Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28, {H01L21/44})	H01L21/4763	H01L21/4763		108
H01L21/47635	14	{After-treatment of these layers}	H01L21/4763	H01L21/4763		144
H01L21/477	12	Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L21/38&#160;-&#160;H01L21/449 and H01L21/461&#160;-&#160;H01L21/475 take precedence)	H01L21/477	H01L21/477		446
H01L21/479	12	Application of electric currents or fields, e.g. for electroforming (H01L21/38&#160;-&#160;H01L21/449 and H01L21/461&#160;-&#160;H01L21/475 take precedence)	H01L21/479	H01L21/479		162
H01L21/48	10	Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07<br><br><u>NOTE</u><br><br>In this group, the expression "treatment" covers also the removal of leads from parts.	H01L21/48	H01L21/48		1086
H01L21/4803	11	{Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks (H01L21/4846 takes precedence; printed circuit boards H05K1/00)}	H01L21/48	H01L21/48		825
H01L21/4807	12	{Ceramic parts}	H01L21/48	H01L21/48		666
H01L21/481	12	{Insulating layers on insulating parts, with or without metallisation}	H01L21/48	H01L21/48		701
H01L21/4814	11	{Conductive parts}	H01L21/48	H01L21/48		715
H01L21/4817	12	{for containers, e.g. caps (H01L21/4871 takes precedence)}	H01L21/48	H01L21/48		389
H01L21/4821	12	{Flat leads, e.g. lead frames with or without insulating supports}	H01L21/48	H01L21/48		1459
H01L21/4825	13	{Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads}	H01L21/48	H01L21/48		988
H01L21/4828	13	{Etching (etching for cleaning without patterning H01L21/4835)}	H01L21/48	H01L21/48		780
H01L21/4832	14	{Etching a temporary substrate after encapsulation process to form leads}	H01L21/48	H01L21/48		540
H01L21/4835	13	{Cleaning, e.g. removing of solder}	H01L21/48	H01L21/48		211
H01L21/4839	13	{Assembly of a flat lead with an insulating support, e.g. for TAB}	H01L21/48	H01L21/48		312
H01L21/4842	13	{Mechanical treatment, e.g. punching, cutting, deforming, cold welding}	H01L21/48	H01L21/48		1317
H01L21/4846	12	{Leads on or in insulating or insulated substrates, e.g. metallisation (H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00)}	H01L21/48	H01L21/48		3417
H01L21/485	13	{Adaptation of interconnections, e.g. engineering charges, repair techniques}	H01L21/48	H01L21/48		300
H01L21/4853	13	{Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps}	H01L21/48	H01L21/48		4776
H01L21/4857	13	{Multilayer substrates (multilayer metallisation on monolayer substrate H01L21/4846)}	H01L21/48	H01L21/48		4422
H01L21/486	13	{Via connections through the substrate with or without pins}	H01L21/48	H01L21/48		4791
H01L21/4864	13	{Cleaning, e.g. removing of solder}	H01L21/48	H01L21/48		211
H01L21/4867	13	{Applying pastes or inks, e.g. screen printing (H01L21/486 takes precedence)}	H01L21/48	H01L21/48		980
H01L21/4871	12	{Bases, plates or heatsinks}	H01L21/48	H01L21/48		1365
H01L21/4875	13	{Connection or disconnection of other leads to or from bases or plates}	H01L21/48	H01L21/48		193
H01L21/4878	13	{Mechanical treatment, e.g. deforming}	H01L21/48	H01L21/48		398
H01L21/4882	13	{Assembly of heatsink parts}	H01L21/48	H01L21/48		2169
H01L21/4885	12	{Wire-like parts or pins (wire ball formation B23K20/00; methods related to connecting semiconductor or other solid state bodies H01L24/00)}	H01L21/48	H01L21/48		340
H01L21/4889	13	{Connection or disconnection of other leads to or from wire-like parts, e.g. wires}	H01L21/48	H01L21/48		248
H01L21/4892	13	{Cleaning}	H01L21/48	H01L21/48		19
H01L21/4896	13	{Mechanical treatment, e.g. cutting, bending}	H01L21/48	H01L21/48		178
H01L21/50	10	Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07{e.g. sealing of a cap to a base of a container}<br><br><u>NOTE</u><br><br>Arrangements for connecting or disconnecting semiconductor or other solid state bodies, or methods related thereto, other than those arrangements or methods covered by the following subgroups, are covered by H01L24/00.	H01L21/50	H01L21/50		7092
H01L21/52	11	Mounting semiconductor bodies in containers	H01L21/52	H01L21/52		3060
H01L21/54	11	Providing fillings in containers, e.g. gas fillings	H01L21/54	H01L21/54		391
H01L21/56	11	Encapsulations, e.g. encapsulation layers, coatings	H01L21/56	H01L21/56		13029
H01L21/561	12	{Batch processing}	H01L21/56	H01L21/56		7116
H01L21/563	12	{Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate}	H01L21/56	H01L21/56		5804
H01L21/565	12	{Moulds}	H01L21/56	H01L21/56		6903
H01L21/566	13	{Release layers for moulds, e.g. release layers, layers against residue during moulding}	H01L21/56	H01L21/56		521
H01L21/568	12	{Temporary substrate used as encapsulation process aid (H01L21/4832 and H01L21/566 take precedence)}	H01L21/56	H01L21/56		7131
H01L21/60	11	Attaching {or detaching} leads or other conductive members, to be used for carrying current to or from the device in operation	H01L21/60	H01L21/60		4312
H01L2021/60007	12	{involving a soldering or an alloying process}	H01L21/60	H01L21/60		367
H01L2021/60015	13	{using plate connectors, e.g. layer, film}	H01L21/60	H01L21/60		90
H01L2021/60022	13	{using bump connectors, e.g. for flip chip mounting}	H01L21/60	H01L21/60		232
H01L2021/6003	14	{Apparatus therefor}	H01L21/60	H01L21/60		14
H01L2021/60037	14	{Right-up bonding}	H01L21/60	H01L21/60		9
H01L2021/60045	14	{Pre-treatment step of the bump connectors prior to bonding}	H01L21/60	H01L21/60		16
H01L2021/60052	15	{Oxide removing step, e.g. flux, rosin}	H01L21/60	H01L21/60		12
H01L2021/6006	14	{with temporary supporting member not part of an apparatus, e.g. removable coating, film or substrate}	H01L21/60	H01L21/60		34
H01L2021/60067	14	{Aligning the bump connectors with the mounting substrate}	H01L21/60	H01L21/60		17
H01L2021/60075	15	{involving active alignment, i.e. by apparatus steering, e.g. using alignment marks, sensors}	H01L21/60	H01L21/60		16
H01L2021/60082	15	{involving passive alignment, e.g. using surface energy, chemical reactions, thermal equilibrium}	H01L21/60	H01L21/60		3
H01L2021/6009	15	{involving guiding structures, e.g. structures that are left at least partly in the bonded product, spacers}	H01L21/60	H01L21/60		11
H01L2021/60097	14	{Applying energy, e.g. for the soldering or alloying process}	H01L21/60	H01L21/60		23
H01L2021/60105	15	{using electromagnetic radiation}	H01L21/60	H01L21/60		7
H01L2021/60112	16	{Coherent radiation, i.e. laser beam}	H01L21/60	H01L21/60		20
H01L2021/6012	16	{Incoherent radiation, e.g. polychromatic heating lamp}	H01L21/60	H01L21/60		2
H01L2021/60127	16	{Induction heating, i.e. eddy currents}	H01L21/60	H01L21/60		3
H01L2021/60135	15	{using convection, e.g. reflow oven}	H01L21/60	H01L21/60		53
H01L2021/60142	16	{with a graded temperature profile}	H01L21/60	H01L21/60		
H01L2021/6015	15	{using conduction, e.g. chuck heater, thermocompression}	H01L21/60	H01L21/60		25
H01L2021/60157	16	{with a graded temperature profile}	H01L21/60	H01L21/60		
H01L2021/60165	15	{using an electron beam}	H01L21/60	H01L21/60		3
H01L2021/60172	15	{using static pressure}	H01L21/60	H01L21/60		29
H01L2021/6018	16	{Unidirectional static pressure}	H01L21/60	H01L21/60		1
H01L2021/60187	16	{Isostatic pressure, e.g. degassing using vacuum or pressurised liquid}	H01L21/60	H01L21/60		118
H01L2021/60195	15	{using dynamic pressure, e.g. ultrasonic or thermosonic bonding}	H01L21/60	H01L21/60		27
H01L2021/60202	15	{using a protective atmosphere, e.g. with forming or shielding gas}	H01L21/60	H01L21/60		4
H01L2021/6021	15	{using an autocatalytic reaction}	H01L21/60	H01L21/60		
H01L2021/60217	14	{Detaching bump connectors, e.g. after testing}	H01L21/60	H01L21/60		1
H01L2021/60225	14	{Arrangement of bump connectors prior to mounting}	H01L21/60	H01L21/60		15
H01L2021/60232	15	{wherein the bump connectors are disposed only on the semiconductor chip}	H01L21/60	H01L21/60		15
H01L2021/6024	15	{wherein the bump connectors are disposed only on the mounting substrate}	H01L21/60	H01L21/60		14
H01L2021/60247	15	{wherein the bump connectors are disposed on both the semiconductor chip and the mounting substrate, e.g. bump to bump}	H01L21/60	H01L21/60		8
H01L2021/60255	15	{wherein the bump connectors are provided as prepeg, e.g. are provided in an insulating plate member}	H01L21/60	H01L21/60		5
H01L2021/60262	15	{Lateral distribution of bump connectors prior to mounting}	H01L21/60	H01L21/60		6
H01L2021/6027	13	{Mounting on semiconductor conductive members}	H01L21/60	H01L21/60		50
H01L2021/60277	12	{involving the use of conductive adhesives}	H01L21/60	H01L21/60		71
H01L2021/60285	12	{involving the use of mechanical auxiliary parts without the use of an alloying or soldering process, e.g. pressure contacts}	H01L21/60	H01L21/60		8
H01L2021/60292	12	{involving the use of an electron or laser beam}	H01L21/60	H01L21/60		34
H01L21/603	12	involving the application of pressure, e.g. thermo-compression bonding (H01L21/607 takes precedence)	H01L21/603	H01L21/603		191
H01L21/607	12	involving the application of mechanical vibrations, e.g. ultrasonic vibrations	H01L21/607	H01L21/607		100
H01L21/62	9	the devices having no potential barriers	H01L21/62	H01L21/62		41
H01L21/64	8	Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in subclasses H10F, H10H, H10K or H10N	H01L21/64	H01L21/64		165
H01L21/67	8	Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components {; Apparatus not specifically provided for elsewhere (processes per seH01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L24/74;)}<br><br><u>NOTE</u><br><br>In this subgroup the term substrate designates a semiconductor or electric solid state device or component, or a wafer.	H01L21/67	H01L21/67		2250
H01L21/67005	9	{Apparatus not specifically provided for elsewhere (processes per seH01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302)}	H01L21/67	H01L21/67		573
H01L21/67011	10	{Apparatus for manufacture or treatment (processes H01L21/30, H01L21/46; for production or after-treatment of single crystals or homogeneous polycrystalline material C30B35/00)}	H01L21/67	H01L21/67		3000
H01L21/67017	11	{Apparatus for fluid treatment (H01L21/67126, H01L21/6715 take precedence)}	H01L21/67	H01L21/67		14140
H01L21/67023	12	{for general liquid treatment, e.g. etching followed by cleaning}	H01L21/67	H01L21/67		1573
H01L21/67028	12	{for cleaning followed by drying, rinsing, stripping, blasting or the like}	H01L21/67	H01L21/67		4489
H01L21/67034	13	{for drying}	H01L21/67	H01L21/67		4146
H01L21/6704	13	{for wet cleaning or washing}	H01L21/67	H01L21/67		2157
H01L21/67046	14	{using mainly scrubbing means, e.g. brushes}	H01L21/67	H01L21/67		1919
H01L21/67051	14	{using mainly spraying means, e.g. nozzles}	H01L21/67	H01L21/67		8147
H01L21/67057	14	{with the semiconductor substrates being dipped in baths or vessels}	H01L21/67	H01L21/67		3070
H01L21/67063	12	{for etching}	H01L21/67	H01L21/67		738
H01L21/67069	13	{for drying etching}	H01L21/67	H01L21/67		8079
H01L21/67075	13	{for wet etching}	H01L21/67	H01L21/67		1298
H01L21/6708	14	{using mainly spraying means, e.g. nozzles}	H01L21/67	H01L21/67		2698
H01L21/67086	14	{with the semiconductor substrates being dipped in baths or vessels}	H01L21/67	H01L21/67		1530
H01L21/67092	11	{Apparatus for mechanical treatment (or grinding or cutting, see the relevant groups in subclasses B24B or B28D)}	H01L21/67	H01L21/67		7927
H01L21/67098	11	{Apparatus for thermal treatment}	H01L21/67	H01L21/67		6784
H01L21/67103	12	{mainly by conduction}	H01L21/67	H01L21/67		5365
H01L21/67109	12	{mainly by convection}	H01L21/67	H01L21/67		7190
H01L21/67115	12	{mainly by radiation}	H01L21/67	H01L21/67		5061
H01L21/67121	11	{Apparatus for making assemblies not otherwise provided for, e.g. package constructions}	H01L21/67	H01L21/67		3223
H01L21/67126	11	{Apparatus for sealing, encapsulating, glassing, decapsulating or the like (processes H01L23/02, H01L23/28)}	H01L21/67	H01L21/67		4673
H01L21/67132	11	{Apparatus for placing on an insulating substrate, e.g. tape}	H01L21/67	H01L21/67		3826
H01L21/67138	11	{Apparatus for wiring semiconductor or solid state device}	H01L21/67	H01L21/67		683
H01L21/67144	11	{Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates}	H01L21/67	H01L21/67		4176
H01L21/6715	11	{Apparatus for applying a liquid, a resin, an ink or the like (H01L21/67126 takes precedence)}	H01L21/67	H01L21/67		6803
H01L21/67155	11	{Apparatus for manufacturing or treating in a plurality of work-stations}	H01L21/67	H01L21/67		854
H01L21/67161	12	{characterized by the layout of the process chambers}	H01L21/67	H01L21/67		904
H01L21/67167	13	{surrounding a central transfer chamber}	H01L21/67	H01L21/67		1537
H01L21/67173	13	{in-line arrangement}	H01L21/67	H01L21/67		1689
H01L21/67178	13	{vertical arrangement}	H01L21/67	H01L21/67		964
H01L21/67184	12	{characterized by the presence of more than one transfer chamber}	H01L21/67	H01L21/67		890
H01L21/6719	12	{characterized by the construction of the processing chambers, e.g. modular processing chambers}	H01L21/67	H01L21/67		3405
H01L21/67196	12	{characterized by the construction of the transfer chamber}	H01L21/67	H01L21/67		1769
H01L21/67201	12	{characterized by the construction of the load-lock chamber}	H01L21/67	H01L21/67		1900
H01L21/67207	12	{comprising a chamber adapted to a particular process}	H01L21/67	H01L21/67		2503
H01L21/67213	13	{comprising at least one ion or electron beam chamber (coating by ion implantation C23C; ion or electron beam tubes H01J37/00)}	H01L21/67	H01L21/67		565
H01L21/67219	13	{comprising at least one polishing chamber (polishing apparatuses B24B)}	H01L21/67	H01L21/67		469
H01L21/67225	13	{comprising at least one lithography chamber (lithographic apparatuses G03F7/00)}	H01L21/67	H01L21/67		587
H01L21/6723	13	{comprising at least one plating chamber (electroless plating apparatuses C23C, electroplating apparatuses C25D)}	H01L21/67	H01L21/67		322
H01L21/67236	12	{the substrates being processed being not semiconductor wafers, e.g. leadframes or chips}	H01L21/67	H01L21/67		282
H01L21/67242	10	{Apparatus for monitoring, sorting or marking (testing or measuring during manufacture H01L22/00, marks per seH01L23/544; testing individual semiconductor devices G01R31/26)}	H01L21/67	H01L21/67		3624
H01L21/67248	11	{Temperature monitoring}	H01L21/67	H01L21/67		7009
H01L21/67253	11	{Process monitoring, e.g. flow or thickness monitoring}	H01L21/67	H01L21/67		9072
H01L21/67259	11	{Position monitoring, e.g. misposition detection or presence detection}	H01L21/67	H01L21/67		7185
H01L21/67265	12	{of substrates stored in a container, a magazine, a carrier, a boat or the like}	H01L21/67	H01L21/67		1662
H01L21/67271	11	{Sorting devices}	H01L21/67	H01L21/67		1644
H01L21/67276	11	{Production flow monitoring, e.g. for increasing throughput (program-control systems per seG05B19/00, e.g. total factory control G05B19/418)}	H01L21/67	H01L21/67		3462
H01L21/67282	11	{Marking devices}	H01L21/67	H01L21/67		1094
H01L21/67288	11	{Monitoring of warpage, curvature, damage, defects or the like}	H01L21/67	H01L21/67		3471
H01L21/67294	11	{using identification means, e.g. labels on substrates or labels on containers}	H01L21/67	H01L21/67		1322
H01L21/673	9	using specially adapted carriers {or holders; Fixing the workpieces on such carriers or holders (holders for supporting a complete device in operation H01L23/32)}	H01L21/673	H01L21/673		1694
H01L21/67303	10	{Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements}	H01L21/673	H01L21/673		771
H01L21/67306	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		203
H01L21/67309	11	{characterized by the substrate support}	H01L21/673	H01L21/673		653
H01L21/67313	10	{Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements}	H01L21/673	H01L21/673		689
H01L21/67316	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		133
H01L21/6732	10	{Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls}	H01L21/673	H01L21/673		683
H01L21/67323	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		61
H01L21/67326	10	{Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls}	H01L21/673	H01L21/673		522
H01L21/6733	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		62
H01L21/67333	10	{Trays for chips (magazine for components H05K13/0084)}	H01L21/673	H01L21/673		1231
H01L21/67336	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		134
H01L21/6734	10	{specially adapted for supporting large square shaped substrates (containers and packaging elements for glass sheets B65D85/48, transporting of glass products during their manufacture C03B35/00)}	H01L21/673	H01L21/673		731
H01L21/67343	11	{characterized by a material, a roughness, a coating or the like}	H01L21/673	H01L21/673		46
H01L21/67346	10	{characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports}	H01L21/673	H01L21/673		870
H01L21/6735	10	{Closed carriers}	H01L21/673	H01L21/673		226
H01L21/67353	11	{specially adapted for a single substrate}	H01L21/673	H01L21/673		284
H01L21/67356	11	{specially adapted for containing chips, dies or ICs}	H01L21/673	H01L21/673		305
H01L21/67359	11	{specially adapted for containing masks, reticles or pellicles}	H01L21/673	H01L21/673		356
H01L21/67363	11	{specially adapted for containing substrates other than wafers (H01L21/67356, H01L21/67359 take precedence)}	H01L21/673	H01L21/673		185
H01L21/67366	11	{characterised by materials, roughness, coatings or the like (materials relating to an injection moulding process B29C45/00; chemical composition of materials C08L51/00)}	H01L21/673	H01L21/673		212
H01L21/67369	11	{characterised by shock absorbing elements, e.g. retainers or cushions}	H01L21/673	H01L21/673		490
H01L21/67373	11	{characterised by locking systems}	H01L21/673	H01L21/673		534
H01L21/67376	11	{characterised by sealing arrangements}	H01L21/673	H01L21/673		342
H01L21/67379	11	{characterised by coupling elements, kinematic members, handles or elements to be externally gripped}	H01L21/673	H01L21/673		701
H01L21/67383	11	{characterised by substrate supports}	H01L21/673	H01L21/673		557
H01L21/67386	11	{characterised by the construction of the closed carrier}	H01L21/673	H01L21/673		755
H01L21/67389	11	{characterised by atmosphere control}	H01L21/673	H01L21/673		678
H01L21/67393	12	{characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl}	H01L21/673	H01L21/673		686
H01L21/67396	11	{characterised by the presence of antistatic elements}	H01L21/673	H01L21/673		150
H01L21/677	9	for conveying, e.g. between different workstations	H01L21/677	H01L21/677		2997
H01L21/67703	10	{between different workstations}	H01L21/677	H01L21/677		1198
H01L21/67706	11	{Mechanical details, e.g. roller, belt (H01L21/67709 takes precedence)}	H01L21/677	H01L21/677		5558
H01L21/67709	11	{using magnetic elements}	H01L21/677	H01L21/677		694
H01L21/67712	11	{the substrate being handled substantially vertically}	H01L21/677	H01L21/677		1563
H01L21/67715	11	{Changing the direction of the conveying path}	H01L21/677	H01L21/677		752
H01L21/67718	11	{Changing orientation of the substrate, e.g. from a horizontal position to a vertical position}	H01L21/677	H01L21/677		601
H01L21/67721	11	{the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames (H01L21/6773 takes precedence)}	H01L21/677	H01L21/677		2718
H01L21/67724	11	{by means of a cart or a vehicule}	H01L21/677	H01L21/677		781
H01L21/67727	11	{using a general scheme of a conveying path within a factory}	H01L21/677	H01L21/677		529
H01L21/6773	11	{Conveying cassettes, containers or carriers}	H01L21/677	H01L21/677		3435
H01L21/67733	11	{Overhead conveying}	H01L21/677	H01L21/677		1453
H01L21/67736	11	{Loading to or unloading from a conveyor}	H01L21/677	H01L21/677		1437
H01L21/67739	10	{into and out of processing chamber}	H01L21/677	H01L21/677		1521
H01L21/67742	11	{Mechanical parts of transfer devices (robots in general in B25J)}	H01L21/677	H01L21/677		7538
H01L21/67745	11	{characterized by movements or sequence of movements of transfer devices}	H01L21/677	H01L21/677		1516
H01L21/67748	11	{horizontal transfer of a single workpiece}	H01L21/677	H01L21/677		1636
H01L21/67751	11	{vertical transfer of a single workpiece}	H01L21/677	H01L21/677		671
H01L21/67754	11	{horizontal transfer of a batch of workpieces}	H01L21/677	H01L21/677		845
H01L21/67757	11	{vertical transfer of a batch of workpieces}	H01L21/677	H01L21/677		840
H01L21/6776	11	{Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers}	H01L21/677	H01L21/677		1525
H01L21/67763	10	{the wafers being stored in a carrier, involving loading and unloading (H01L21/6779 takes precedence)}	H01L21/677	H01L21/677		631
H01L21/67766	11	{Mechanical parts of transfer devices (robots in general in B25J)}	H01L21/677	H01L21/677		3811
H01L21/67769	11	{Storage means}	H01L21/677	H01L21/677		1930
H01L21/67772	11	{involving removal of lid, door, cover}	H01L21/677	H01L21/677		1741
H01L21/67775	11	{Docking arrangements}	H01L21/677	H01L21/677		1430
H01L21/67778	11	{involving loading and unloading of wafers}	H01L21/677	H01L21/677		2261
H01L21/67781	12	{Batch transfer of wafers}	H01L21/677	H01L21/677		1409
H01L21/67784	10	{using air tracks}	H01L21/677	H01L21/677		733
H01L21/67787	11	{with angular orientation of the workpieces}	H01L21/677	H01L21/677		93
H01L21/6779	11	{the workpieces being stored in a carrier, involving loading and unloading}	H01L21/677	H01L21/677		94
H01L21/67793	10	{with orientating and positioning by means of a vibratory bowl or track}	H01L21/677	H01L21/677		132
H01L21/67796	10	{with angular orientation of workpieces (H01L21/67787 and H01L21/67793 take precedence)}	H01L21/677	H01L21/677		254
H01L21/68	9	for positioning, orientation or alignment	H01L21/68	H01L21/68		8867
H01L21/681	10	{using optical controlling means}	H01L21/68	H01L21/68		3708
H01L21/682	10	{Mask-wafer alignment (in general G03F7/70, G03F9/70)}	H01L21/68	H01L21/68		1463
H01L21/683	9	for supporting or gripping (for conveying H01L21/677, for positioning, orientation or alignment H01L21/68)	H01L21/683	H01L21/683		4023
H01L21/6831	10	{using electrostatic chucks}	H01L21/683	H01L21/683		4129
H01L21/6833	11	{Details of electrostatic chucks}	H01L21/683	H01L21/683		4190
H01L21/6835	10	{using temporarily an auxiliary support}<br><br><u>NOTE</u><br><br>H01L21/6835, details of the apparatus are to be further indexed using the indexing codes chosen from H01L2221/68304 and subgroups.	H01L21/683	H01L21/683		11884
H01L21/6836	11	{Wafer tapes, e.g. grinding or dicing support tapes (adhesive tapes in general C09J7/20)}	H01L21/683	H01L21/683		6599
H01L21/6838	10	{with gripping and holding devices using a vacuum; Bernoulli devices}	H01L21/683	H01L21/683		8920
H01L21/687	10	using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks H01L21/6831)}	H01L21/687	H01L21/687		1737
H01L21/68707	11	{the wafers being placed on a robot blade, or gripped by a gripper for conveyance}	H01L21/687	H01L21/687		4755
H01L21/68714	11	{the wafers being placed on a susceptor, stage or support}	H01L21/687	H01L21/687		1740
H01L21/68721	12	{characterised by edge clamping, e.g. clamping ring}	H01L21/687	H01L21/687		2159
H01L21/68728	12	{characterised by a plurality of separate clamping members, e.g. clamping fingers}	H01L21/687	H01L21/687		1552
H01L21/68735	12	{characterised by edge profile or support profile}	H01L21/687	H01L21/687		2327
H01L21/68742	12	{characterised by a lifting arrangement, e.g. lift pins}	H01L21/687	H01L21/687		5213
H01L21/6875	12	{characterised by a plurality of individual support members, e.g. support posts or protrusions}	H01L21/687	H01L21/687		2026
H01L21/68757	12	{characterised by a coating or a hardness or a material}	H01L21/687	H01L21/687		2301
H01L21/68764	12	{characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel}	H01L21/687	H01L21/687		3787
H01L21/68771	12	{characterised by supporting more than one semiconductor substrate}	H01L21/687	H01L21/687		1591
H01L21/68778	12	{characterised by supporting substrates others than wafers, e.g. chips}	H01L21/687	H01L21/687		536
H01L21/68785	12	{characterised by the mechanical construction of the susceptor, stage or support}	H01L21/687	H01L21/687		5473
H01L21/68792	12	{characterised by the construction of the shaft}	H01L21/687	H01L21/687		2078
H01L21/70	8	Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof ({multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L25/00; } manufacture of assemblies consisting of preformed electrical components H05K3/00, H05K13/00)	H01L21/70	H01L21/70		268
H01L21/702	9	{of thick-or thin-film circuits or parts thereof}	H01L21/70	H01L21/70		64
H01L21/705	10	{of thick-film circuits or parts thereof}	H01L21/70	H01L21/70		159
H01L21/707	10	{of thin-film circuits or parts thereof}	H01L21/70	H01L21/70		281
H01L21/71	9	Manufacture of specific parts of devices defined in group H01L21/70({H01L21/0405, H01L21/0445} , H01L21/28, H01L21/44, H01L21/48 take precedence)	H01L21/71	H01L21/71		74
H01L21/74	10	Making of {localized} buried regions, e.g. buried collector layers, internal connections {substrate contacts}	H01L21/74	H01L21/74		855
H01L21/743	11	{Making of internal connections, substrate contacts}	H01L21/74	H01L21/74		1586
H01L21/746	11	{for AIII-BV integrated circuits}	H01L21/74	H01L21/74		27
H01L21/76	10	Making of isolation regions between components	H01L21/76	H01L21/76		2970
H01L21/7602	11	{between components manufactured in an active substrate comprising SiC compounds}	H01L21/76	H01L21/76		76
H01L21/7605	11	{between components manufactured in an active substrate comprising AIII BV compounds}	H01L21/76	H01L21/76		274
H01L21/7607	11	{between components manufactured in an active substrate comprising AIIBVI compounds}	H01L21/76	H01L21/76		5
H01L21/761	11	PN junctions	H01L21/761	H01L21/761		1818
H01L21/762	11	Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}	H01L21/762	H01L21/762		1913
H01L21/76202	12	{using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO (H01L21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L21/76264)}	H01L21/762	H01L21/762		1391
H01L21/76205	13	{in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region}	H01L21/762	H01L21/762		1008
H01L21/76208	14	{using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas}	H01L21/762	H01L21/762		100
H01L21/7621	14	{the recessed region having a shape other than rectangular, e.g. rounded or oblique shape (H01L21/76208 takes precedence)}	H01L21/762	H01L21/762		258
H01L21/76213	13	{introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose}	H01L21/762	H01L21/762		345
H01L21/76216	14	{introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers}	H01L21/762	H01L21/762		539
H01L21/76218	15	{introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions}	H01L21/762	H01L21/762		122
H01L21/76221	13	{with a plurality of successive local oxidation steps}	H01L21/762	H01L21/762		164
H01L21/76224	12	{using trench refilling with dielectric materials (trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264)}	H01L21/762	H01L21/762		9600
H01L21/76227	13	{the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals}	H01L21/762	H01L21/762		312
H01L21/76229	13	{Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches}	H01L21/762	H01L21/762		2305
H01L21/76232	13	{of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls (H01L21/76229 takes precedence)}	H01L21/762	H01L21/762		2396
H01L21/76235	14	{trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS}	H01L21/762	H01L21/762		507
H01L21/76237	13	{introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior}	H01L21/762	H01L21/762		1172
H01L21/7624	12	{using semiconductor on insulator [SOI] technology}	H01L21/762	H01L21/762		1004
H01L21/76243	13	{using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}	H01L21/762	H01L21/762		485
H01L21/76245	13	{using full isolation by porous oxide silicon, i.e. FIPOS techniques}	H01L21/762	H01L21/762		73
H01L21/76248	13	{using lateral overgrowth techniques, i.e. ELO techniques}	H01L21/762	H01L21/762		123
H01L21/76251	13	{using bonding techniques}	H01L21/762	H01L21/762		1288
H01L21/76254	14	{with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}	H01L21/762	H01L21/762		2237
H01L21/76256	14	{using silicon etch back techniques, e.g. BESOI, ELTRAN}	H01L21/762	H01L21/762		635
H01L21/76259	14	{with separation/delamination along a porous layer}	H01L21/762	H01L21/762		285
H01L21/76262	13	{using selective deposition of single crystal silicon, i.e. SEG techniques}	H01L21/762	H01L21/762		89
H01L21/76264	13	{SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands}	H01L21/762	H01L21/762		1333
H01L21/76267	14	{Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}	H01L21/762	H01L21/762		203
H01L21/7627	14	{Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques}	H01L21/762	H01L21/762		59
H01L21/76272	14	{Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques}	H01L21/762	H01L21/762		51
H01L21/76275	14	{Vertical isolation by bonding techniques}	H01L21/762	H01L21/762		315
H01L21/76278	14	{Vertical isolation by selective deposition of single crystal silicon, i.e. SEG techniques}	H01L21/762	H01L21/762		56
H01L21/76281	14	{Lateral isolation by selective oxidation of silicon}	H01L21/762	H01L21/762		333
H01L21/76283	14	{Lateral isolation by refilling of trenches with dielectric material}	H01L21/762	H01L21/762		1257
H01L21/76286	14	{Lateral isolation by refilling of trenches with polycristalline material}	H01L21/762	H01L21/762		250
H01L21/76289	14	{Lateral isolation by air gap}	H01L21/762	H01L21/762		273
H01L21/76291	14	{Lateral isolation by field effect}	H01L21/762	H01L21/762		17
H01L21/76294	12	{using selective deposition of single crystal silicon, i.e. SEG techniques}	H01L21/762	H01L21/762		331
H01L21/76297	12	{Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit}	H01L21/762	H01L21/762		510
H01L21/763	11	Polycrystalline semiconductor regions {(H01L21/76264 takes precedence)}	H01L21/763	H01L21/763		994
H01L21/764	11	Air gaps {(H01L21/76264 takes precedence)}	H01L21/764	H01L21/764		1496
H01L21/765	11	by field effect {(H01L21/76264 takes precedence)}	H01L21/765	H01L21/765		402
H01L21/768	10	Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}<br><br><u>NOTE</u><br><br>Groups H01L21/768&#160;-&#160;H01L21/76898cover multi-step processes for manufacturing interconnections. Information peculiar to single-step processes should also be classified in the corresponding group, e.g. <br>cleaning H01L21/02041<br>etching H01L21/311, H01L21/3213<br>masking H01L21/027, H01L21/033, H01L21/31144, H01L21/32139<br>planarizing H01L21/3105, H01L21/321.	H01L21/768	H01L21/768		4058
H01L21/76801	11	{characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing}	H01L21/768	H01L21/768		2276
H01L21/76802	12	{by forming openings in dielectrics}	H01L21/768	H01L21/768		8718
H01L21/76804	13	{by forming tapered via holes}	H01L21/768	H01L21/768		2088
H01L21/76805	13	{the opening being a via or contact hole penetrating the underlying conductor}	H01L21/768	H01L21/768		2472
H01L21/76807	13	{for dual damascene structures}	H01L21/768	H01L21/768		3138
H01L21/76808	14	{involving intermediate temporary filling with material}	H01L21/768	H01L21/768		1379
H01L21/7681	14	{involving one or more buried masks}	H01L21/768	H01L21/768		475
H01L21/76811	14	{involving multiple stacked pre-patterned masks}	H01L21/768	H01L21/768		931
H01L21/76813	14	{involving a partial via etch}	H01L21/768	H01L21/768		958
H01L21/76814	13	{post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors}	H01L21/768	H01L21/768		2819
H01L21/76816	13	{Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per seH01L23/528; CAD of ICs G06F30/00)}	H01L21/768	H01L21/768		4792
H01L21/76817	13	{using printing or stamping techniques}	H01L21/768	H01L21/768		136
H01L21/76819	12	{Smoothing of the dielectric (planarisation of insulating materials per seH01L21/31051)}	H01L21/768	H01L21/768		2556
H01L21/7682	12	{the dielectric comprising air gaps}	H01L21/768	H01L21/768		2818
H01L21/76822	12	{Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.}	H01L21/768	H01L21/768		217
H01L21/76823	13	{transforming an insulating layer into a conductive layer}	H01L21/768	H01L21/768		131
H01L21/76825	13	{by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. (plasma treatment H01L21/76826)}	H01L21/768	H01L21/768		1163
H01L21/76826	13	{by contacting the layer with gases, liquids or plasmas}	H01L21/768	H01L21/768		1817
H01L21/76828	13	{thermal treatment}	H01L21/768	H01L21/768		1261
H01L21/76829	12	{characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}	H01L21/768	H01L21/768		3882
H01L21/76831	13	{in via holes or trenches, e.g. non-conductive sidewall liners}	H01L21/768	H01L21/768		4658
H01L21/76832	13	{Multiple layers}	H01L21/768	H01L21/768		2418
H01L21/76834	13	{formation of thin insulating films on the sidewalls or on top of conductors (H01L21/76831 takes precedence)}	H01L21/768	H01L21/768		4466
H01L21/76835	12	{Combinations of two or more different dielectric layers having a low dielectric constant (H01L21/76832 takes precedence)}	H01L21/768	H01L21/768		869
H01L21/76837	12	{Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics}	H01L21/768	H01L21/768		1712
H01L21/76838	11	{characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors H01L21/3213)}<br><br><u>NOTE</u><br><br>When the interconnect is also used as the conductor part of a conductor insulator semiconductor electrode (gate level interconnections), documents are classified in the relevant electrode manufacture groups, e.g. H01L21/28026.	H01L21/768	H01L21/768		4716
H01L21/7684	12	{Smoothing; Planarisation}	H01L21/768	H01L21/768		3752
H01L21/76841	12	{Barrier, adhesion or liner layers}	H01L21/768	H01L21/768		1229
H01L21/76843	13	{formed in openings in a dielectric}	H01L21/768	H01L21/768		6544
H01L21/76844	14	{Bottomless liners}	H01L21/768	H01L21/768		858
H01L21/76846	14	{Layer combinations}	H01L21/768	H01L21/768		2357
H01L21/76847	14	{the layer being positioned within the main fill metal}	H01L21/768	H01L21/768		768
H01L21/76849	14	{the layer being positioned on top of the main fill metal}	H01L21/768	H01L21/768		1946
H01L21/7685	13	{the layer covering a conductive structure (H01L21/76849 takes precedence)}	H01L21/768	H01L21/768		1326
H01L21/76852	14	{the layer also covering the sidewalls of the conductive structure}	H01L21/768	H01L21/768		690
H01L21/76853	13	{characterized by particular after-treatment steps}	H01L21/768	H01L21/768		114
H01L21/76855	14	{After-treatment introducing at least one additional element into the layer}	H01L21/768	H01L21/768		1029
H01L21/76856	15	{by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner}	H01L21/768	H01L21/768		1259
H01L21/76858	15	{by diffusing alloying elements}	H01L21/768	H01L21/768		390
H01L21/76859	15	{by ion implantation}	H01L21/768	H01L21/768		272
H01L21/76861	14	{Post-treatment or after-treatment not introducing additional chemical elements into the layer}	H01L21/768	H01L21/768		220
H01L21/76862	15	{Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation}	H01L21/768	H01L21/768		567
H01L21/76864	15	{Thermal treatment}	H01L21/768	H01L21/768		1013
H01L21/76865	14	{Selective removal of parts of the layer (H01L21/76844 takes precedence)}	H01L21/768	H01L21/768		1124
H01L21/76867	13	{characterized by methods of formation other than PVD, CVD or deposition from a liquids (PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288)}	H01L21/768	H01L21/768		555
H01L21/76868	13	{Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films}	H01L21/768	H01L21/768		239
H01L21/7687	13	{Thin films associated with contacts of capacitors}	H01L21/768	H01L21/768		542
H01L21/76871	13	{Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers}	H01L21/768	H01L21/768		667
H01L21/76873	14	{for electroplating}	H01L21/768	H01L21/768		1476
H01L21/76874	14	{for electroless plating}	H01L21/768	H01L21/768		511
H01L21/76876	14	{for deposition from the gas phase, e.g. CVD}	H01L21/768	H01L21/768		958
H01L21/76877	12	{Filling of holes, grooves or trenches, e.g. vias, with conductive material}	H01L21/768	H01L21/768		11736
H01L21/76879	13	{by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general H01L21/288)}	H01L21/768	H01L21/768		2657
H01L21/7688	13	{by deposition over sacrificial masking layer, e.g. lift-off (lift-off per seH01L21/0272)}	H01L21/768	H01L21/768		328
H01L21/76882	13	{Reflowing or applying of pressure to better fill the contact hole}	H01L21/768	H01L21/768		641
H01L21/76883	13	{Post-treatment or after-treatment of the conductive material}	H01L21/768	H01L21/768		2274
H01L21/76885	12	{By forming conductive members before deposition of protective insulating material, e.g. pillars, studs}	H01L21/768	H01L21/768		2851
H01L21/76886	12	{Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances}	H01L21/768	H01L21/768		855
H01L21/76888	13	{By rendering at least a portion of the conductor non conductive, e.g. oxidation}	H01L21/768	H01L21/768		570
H01L21/76889	13	{by forming silicides of refractory metals}	H01L21/768	H01L21/768		729
H01L21/76891	13	{by using superconducting materials}	H01L21/768	H01L21/768		71
H01L21/76892	13	{modifying the pattern}	H01L21/768	H01L21/768		488
H01L21/76894	14	{using a laser, e.g. laser cutting, laser direct writing, laser repair}	H01L21/768	H01L21/768		332
H01L21/76895	12	{Local interconnects; Local pads, as exemplified by patent document EP0896365}	H01L21/768	H01L21/768		5249
H01L21/76897	11	{Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step}	H01L21/768	H01L21/768		9935
H01L21/76898	11	{formed through a semiconductor substrate}	H01L21/768	H01L21/768		6812
H01L21/77	9	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (manufacture or treatment of electronic memory devices H10B)	H01L21/77	H01L21/77		1504
H01L21/78	10	with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304)	H01L21/78	H01L21/78		10496
H01L21/7806	11	{involving the separation of the active layers from a substrate}	H01L21/78	H01L21/78		756
H01L21/7813	12	{leaving a reusable substrate, e.g. epitaxial lift off}	H01L21/78	H01L21/78		446
H01L22/00	7	{Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor}	H01L21/66	H01L22/00		6009
H01L22/10	8	{Measuring as part of the manufacturing process (burn-in G01R31/2855)}	H01L21/66	H01L22/10		1611
H01L22/12	9	{for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (electrical measurement of diffusions H01L22/14)}	H01L21/66	H01L22/12		13616
H01L22/14	9	{for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means}	H01L21/66	H01L22/14		4873
H01L22/20	8	{Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps}	H01L21/66	H01L22/20		7560
H01L22/22	9	{Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement (testing and repair of stores after manufacture including at wafer scale G11C29/00; fuses per seH01L23/525)}	H01L21/66	H01L22/22		664
H01L22/24	9	{Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change (voltage contrast G01R31/311)}	H01L21/66	H01L22/24		1071
H01L22/26	9	{Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement (endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32)}	H01L21/66	H01L22/26		2436
H01L22/30	8	{Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements}	H01L21/66	H01L22/30		3817
H01L22/32	9	{Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors (arrangements for conducting electric current to or from the solid state body in operation H01L23/48)}	H01L21/66	H01L22/32		2986
H01L22/34	9	{Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line (switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633)}	H01L21/66	H01L22/34		4409
H01L23/00	7	Details of semiconductor or other solid state devices (H01L25/00 takes precedence {; structural arrangements for testing or measuring during manufacture or treatment, or for reliability measurements H01L22/00; arrangements for connecting or disconnecting semiconductor or solid-state bodies, or methods related thereto H01L24/00; finger print sensors G06V40/12})<br><br><u>NOTE</u><br><br> This group does not cover: <br>details of semiconductor bodies or of electrodes of devices provided for in subclass H10D, which details are covered by that group;<br>details peculiar to devices provided for in a single subclass of subclasses H10F, H10H, H10K or H10N, which details are covered by those places.	H01L23/00	H01L23/00		1183
H01L23/02	8	Containers; Seals (H01L23/12, H01L23/34, H01L23/48, H01L23/552, {H01L23/66} take precedence; {for memories G11C})	H01L23/02	H01L23/02		1603
H01L23/04	9	characterised by the shape {of the container or parts, e.g. caps, walls}	H01L23/04	H01L23/04		2913
H01L23/041	10	{the container being a hollow construction having no base used as a mounting for the semiconductor body}	H01L23/04	H01L23/04		607
H01L23/043	10	the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body	H01L23/043	H01L23/043		430
H01L23/045	11	the other leads having an insulating passage through the base	H01L23/045	H01L23/045		417
H01L23/047	11	the other leads being parallel to the base	H01L23/047	H01L23/047		549
H01L23/049	11	the other leads being perpendicular to the base	H01L23/049	H01L23/049		415
H01L23/051	11	another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type	H01L23/051	H01L23/051		1349
H01L23/053	10	the container being a hollow construction and having an insulating {or insulated} base as a mounting for the semiconductor body	H01L23/053	H01L23/053		1425
H01L23/055	11	the leads having a passage through the base {(H01L23/057 takes precedence)}	H01L23/055	H01L23/055		891
H01L23/057	11	the leads being parallel to the base	H01L23/057	H01L23/057		1371
H01L23/06	9	characterised by the material of the container or its electrical properties	H01L23/06	H01L23/06		698
H01L23/08	10	the material being an electrical insulator, e.g. glass	H01L23/08	H01L23/08		603
H01L23/10	9	characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container	H01L23/10	H01L23/10		4258
H01L23/12	8	Mountings, e.g. non-detachable insulating substrates	H01L23/12	H01L23/12		5013
H01L23/13	9	characterised by the shape	H01L23/13	H01L23/13		6611
H01L23/14	9	characterised by the material or its electrical properties {(printed circuit boards H05K1/00)}	H01L23/14	H01L23/14		1265
H01L23/142	10	{Metallic substrates having insulating layers}	H01L23/14	H01L23/14		1199
H01L23/145	10	{Organic substrates, e.g. plastic}	H01L23/14	H01L23/14		1719
H01L23/147	10	{Semiconductor insulating substrates (semiconductor conductive substrates H01L23/4926)}	H01L23/14	H01L23/14		1403
H01L23/15	10	Ceramic or glass substrates {(H01L23/142, H01L23/145, H01L23/147 take precedence)}	H01L23/15	H01L23/15		3234
H01L23/16	8	Fillings or auxiliary members in containers {or encapsulations}, e.g. centering rings (H01L23/42, H01L23/552 take precedence)	H01L23/16	H01L23/16		2288
H01L23/18	9	Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device<br><br><u>NOTE</u><br><br> Group H01L23/26 takes precedence over groups H01L23/20&#160;-&#160;H01L23/24	H01L23/18	H01L23/18		281
H01L23/20	10	gaseous at the normal operating temperature of the device	H01L23/20	H01L23/20		132
H01L23/22	10	liquid at the normal operating temperature of the device	H01L23/22	H01L23/22		75
H01L23/24	10	solid or gel at the normal operating temperature of the device {(H01L23/3135 takes precedence)}	H01L23/24	H01L23/24		2166
H01L23/26	10	including materials for absorbing or reacting with moisture or other undesired substances {, e.g. getters}	H01L23/26	H01L23/26		584
H01L23/28	8	Encapsulations, e.g. encapsulating layers, coatings, {e.g. for protection}(H01L23/552 takes precedence; {insulating layers for contacts or interconnections H01L23/5329})	H01L23/28	H01L23/28		3545
H01L23/29	9	characterised by the material {, e.g. carbon (interlayer dielectrics H01L23/5329)}	H01L23/29	H01L23/29		3229
H01L23/291	10	{Oxides or nitrides or carbides, e.g. ceramics, glass}	H01L23/29	H01L23/29		2528
H01L23/293	10	{Organic, e.g. plastic}	H01L23/29	H01L23/29		4536
H01L23/295	11	{containing a filler (H01L23/296 takes precedence)}	H01L23/29	H01L23/29		2622
H01L23/296	11	{Organo-silicon compounds}	H01L23/29	H01L23/29		1093
H01L23/298	10	{Semiconductor material, e.g. amorphous silicon}	H01L23/29	H01L23/29		192
H01L23/31	9	characterised by the arrangement {or shape}	H01L23/31	H01L23/31		3970
H01L23/3107	10	{the device being completely enclosed}	H01L23/31	H01L23/31		10199
H01L23/3114	11	{the device being a chip scale package, e.g. CSP}	H01L23/31	H01L23/31		5400
H01L23/3121	11	{a substrate forming part of the encapsulation}	H01L23/31	H01L23/31		8353
H01L23/3128	12	{the substrate having spherical bumps for external connection}	H01L23/31	H01L23/31		10963
H01L23/3135	11	{Double encapsulation or coating and encapsulation}	H01L23/31	H01L23/31		4091
H01L23/3142	11	{Sealing arrangements between parts, e.g. adhesion promotors}	H01L23/31	H01L23/31		1552
H01L23/315	11	{the encapsulation having a cavity}	H01L23/31	H01L23/31		917
H01L23/3157	10	{Partial encapsulation or coating (mask layer used as insulation layer H01L21/31)}	H01L23/31	H01L23/31		2504
H01L23/3164	11	{the coating being a foil}	H01L23/31	H01L23/31		164
H01L23/3171	11	{the coating being directly applied to the semiconductor body, e.g. passivation layer (H01L23/3178 takes precedence)}	H01L23/31	H01L23/31		3568
H01L23/3178	11	{Coating or filling in grooves made in the semiconductor body}	H01L23/31	H01L23/31		532
H01L23/3185	11	{the coating covering also the sidewalls of the semiconductor body}	H01L23/31	H01L23/31		1615
H01L23/3192	11	{Multilayer coating}	H01L23/31	H01L23/31		2078
H01L23/32	8	Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L23/40 takes precedence)	H01L23/32	H01L23/32		1265
H01L23/34	8	Arrangements for cooling, heating, ventilating or temperature compensation {; Temperature sensing arrangements (thermal treatment apparatus H01L21/00)}	H01L23/34	H01L23/34		3009
H01L23/345	9	{Arrangements for heating (thermal treatment apparatus H01L21/00)}	H01L23/34	H01L23/34		642
H01L23/36	9	Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks {(H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345)}	H01L23/36	H01L23/36		5875
H01L23/367	10	Cooling facilitated by shape of device {(H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence)}	H01L23/367	H01L23/367		8811
H01L23/3672	11	{Foil-like cooling fins or heat sinks (being part of lead-frames H01L23/49568)}	H01L23/367	H01L23/367		5173
H01L23/3675	11	{characterised by the shape of the housing}	H01L23/367	H01L23/367		3064
H01L23/3677	11	{Wire-like or pin-like cooling fins or heat sinks}	H01L23/367	H01L23/367		4287
H01L23/373	10	Cooling facilitated by selection of materials for the device {or materials for thermal expansion adaptation, e.g. carbon}	H01L23/373	H01L23/373		2923
H01L23/3731	11	{Ceramic materials or glass (H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence)}	H01L23/373	H01L23/373		1086
H01L23/3732	11	{Diamonds}	H01L23/373	H01L23/373		915
H01L23/3733	11	{having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures (H01L23/3732, H01L23/3737 take precedence)}	H01L23/373	H01L23/373		1203
H01L23/3735	11	{Laminates or multilayers, e.g. direct bond copper ceramic substrates}	H01L23/373	H01L23/373		5998
H01L23/3736	11	{Metallic materials (H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence)}	H01L23/373	H01L23/373		3673
H01L23/3737	11	{Organic materials with or without a thermoconductive filler}	H01L23/373	H01L23/373		2551
H01L23/3738	11	{Semiconductor materials}	H01L23/373	H01L23/373		571
H01L23/38	9	Cooling arrangements using the Peltier effect	H01L23/38	H01L23/38		1201
H01L23/40	9	Mountings or securing means for detachable cooling or heating arrangements {(heating H01L23/345); fixed by friction, plugs or springs}	H01L23/40	H01L23/40		1525
H01L23/4006	10	{with bolts or screws}	H01L23/40	H01L23/40		3430
H01L23/4012	11	{for stacked arrangements of a plurality of semiconductor devices (assemblies per seH01L25/00)}	H01L23/40	H01L23/40		297
H01L2023/4018	11	{characterised by the type of device to be heated or cooled}	H01L23/40	H01L23/40		29
H01L2023/4025	12	{Base discrete devices, e.g. presspack, disc-type transistors}	H01L23/40	H01L23/40		258
H01L2023/4031	12	{Packaged discrete devices, e.g. to-3 housings, diodes}	H01L23/40	H01L23/40		354
H01L2023/4037	11	{characterised by thermal path or place of attachment of heatsink}	H01L23/40	H01L23/40		76
H01L2023/4043	12	{heatsink to have chip}	H01L23/40	H01L23/40		181
H01L2023/405	12	{heatsink to package}	H01L23/40	H01L23/40		814
H01L2023/4056	12	{heatsink to additional heatsink}	H01L23/40	H01L23/40		324
H01L2023/4062	12	{heatsink to or through board or cabinet}	H01L23/40	H01L23/40		594
H01L2023/4068	12	{Heatconductors between device and heatsink, e.g. compliant heat-spreaders, heat-conducting bands}	H01L23/40	H01L23/40		285
H01L2023/4075	11	{Mechanical elements}	H01L23/40	H01L23/40		72
H01L2023/4081	12	{Compliant clamping elements not primarily serving heat-conduction}	H01L23/40	H01L23/40		519
H01L2023/4087	12	{Mounting accessories, interposers, clamping or screwing parts}	H01L23/40	H01L23/40		856
H01L23/4093	10	{Snap-on arrangements, e.g. clips}	H01L23/40	H01L23/40		2350
H01L23/42	9	Fillings or auxiliary members in containers {or encapsulations} selected or arranged to facilitate heating or cooling	H01L23/42	H01L23/42		2578
H01L23/427	10	Cooling by change of state, e.g. use of heat pipes {(by liquefied gas H01L23/445)}	H01L23/427	H01L23/427		6257
H01L23/4275	11	{by melting or evaporation of solids}	H01L23/427	H01L23/427		541
H01L23/433	10	Auxiliary members {in containers} characterised by their shape, e.g. pistons	H01L23/433	H01L23/433		1123
H01L23/4332	11	{Bellows}	H01L23/433	H01L23/433		109
H01L23/4334	11	{Auxiliary members in encapsulations (H01L23/49568 takes precedence)}	H01L23/433	H01L23/433		3391
H01L23/4336	11	{in combination with jet impingement}	H01L23/433	H01L23/433		113
H01L23/4338	11	{Pistons, e.g. spring-loaded members}	H01L23/433	H01L23/433		289
H01L23/44	9	the complete device being wholly immersed in a fluid other than air {(H01L23/427 takes precedence)}	H01L23/44	H01L23/44		421
H01L23/445	10	{the fluid being a liquefied gas, e.g. in a cryogenic vessel}	H01L23/44	H01L23/44		144
H01L23/46	9	involving the transfer of heat by flowing fluids (H01L23/42, H01L23/44 take precedence)	H01L23/46	H01L23/46		610
H01L23/467	10	by flowing gases, e.g. air {(H01L23/473 takes precedence)}	H01L23/467	H01L23/467		5110
H01L23/473	10	by flowing liquids {(H01L23/4332, H01L23/4338 take precedence)}	H01L23/473	H01L23/473		7650
H01L23/4735	11	{Jet impingement (H01L23/4336 takes precedence)}	H01L23/473	H01L23/473		478
H01L23/48	8	Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor}<br><br><u>NOTE</u><br><br>Arrangements for connecting or disconnecting semiconductor or other solid state bodies, or methods related thereto, other than those arrangements or methods covered by the following subgroups, are covered by H01L24/00.	H01L23/48	H01L23/48		6815
H01L23/481	9	{Internal lead connections, e.g. via connections, feedthrough structures}	H01L23/48	H01L23/48		11831
H01L23/482	9	consisting of lead-in layers inseparably applied to the semiconductor body {(electrodes)}	H01L23/482	H01L23/482		934
H01L23/4821	10	{Bridge structure with air gap}	H01L23/482	H01L23/482		252
H01L23/4822	10	{Beam leads}	H01L23/482	H01L23/482		205
H01L23/4824	10	{Pads with extended contours, e.g. grid structure, branch structure, finger structure}	H01L23/482	H01L23/482		1639
H01L23/4825	10	{for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS}	H01L23/482	H01L23/482		98
H01L23/4827	10	{Materials}	H01L23/482	H01L23/482		360
H01L23/4828	11	{Conductive organic material or pastes, e.g. conductive adhesives, inks}	H01L23/482	H01L23/482		339
H01L23/485	10	consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts {(H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10)}	H01L23/485	H01L23/485		5819
H01L23/4855	11	{Overhang structure}	H01L23/485	H01L23/485		62
H01L23/488	9	consisting of soldered {or bonded} constructions {(bump connectors H01L24/01)}	H01L23/488	H01L23/488		3461
H01L23/49	10	wire-like {arrangements or pins or rods (using optical fibres H01L23/48; pins attached to insulating substrates H01L23/49811)}	H01L23/49	H01L23/49		1640
H01L23/492	10	Bases or plates {or solder therefor}	H01L23/492	H01L23/492		1316
H01L23/4922	11	{having a heterogeneous or anisotropic structure}	H01L23/492	H01L23/492		146
H01L23/4924	11	{characterised by the materials}	H01L23/492	H01L23/492		461
H01L23/4926	12	{the materials containing semiconductor material}	H01L23/492	H01L23/492		59
H01L23/4928	12	{the materials containing carbon}	H01L23/492	H01L23/492		45
H01L23/495	10	Lead-frames {or other flat leads (H01L23/498 takes precedence; lead frame interconnections between components H01L23/52)}	H01L23/495	H01L23/495		2286
H01L23/49503	11	{characterised by the die pad}	H01L23/495	H01L23/495		2539
H01L23/49506	12	{an insulative substrate being used as a diepad, e.g. ceramic, plastic (H01L23/49531 takes precedence)}	H01L23/495	H01L23/495		228
H01L23/4951	12	{Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad}	H01L23/495	H01L23/495		1787
H01L23/49513	12	{having bonding material between chip and die pad}	H01L23/495	H01L23/495		1672
H01L23/49517	11	{Additional leads}	H01L23/495	H01L23/495		788
H01L23/4952	12	{the additional leads being a bump or a wire}	H01L23/495	H01L23/495		1953
H01L23/49524	12	{the additional leads being a tape carrier or flat leads}	H01L23/495	H01L23/495		1447
H01L23/49527	12	{the additional leads being a multilayer}	H01L23/495	H01L23/495		137
H01L23/49531	12	{the additional leads being a wiring board}	H01L23/495	H01L23/495		946
H01L23/49534	11	{Multi-layer}	H01L23/495	H01L23/495		395
H01L23/49537	11	{Plurality of lead frames mounted in one device}	H01L23/495	H01L23/495		1072
H01L23/49541	11	{Geometry of the lead-frame}	H01L23/495	H01L23/495		4660
H01L23/49544	12	{Deformation absorbing parts in the lead frame plane, e.g. meanderline shape (H01L23/49562 takes precedence)}	H01L23/495	H01L23/495		204
H01L23/49548	12	{Cross section geometry (H01L23/49562 takes precedence)}	H01L23/495	H01L23/495		2917
H01L23/49551	13	{characterised by bent parts}	H01L23/495	H01L23/495		1336
H01L23/49555	14	{the bent parts being the outer leads}	H01L23/495	H01L23/495		1028
H01L23/49558	12	{Insulating layers on lead frames, e.g. bridging members}	H01L23/495	H01L23/495		626
H01L23/49562	12	{for individual devices of subclass H10D}	H01L23/495	H01L23/495		4110
H01L23/49565	12	{Side rails of the lead frame, e.g. with perforations, sprocket holes}	H01L23/495	H01L23/495		464
H01L23/49568	11	{specifically adapted to facilitate heat dissipation}	H01L23/495	H01L23/495		1995
H01L23/49572	11	{consisting of thin flexible metallic tape with or without a film carrier (H01L23/49503&#160;-&#160;H01L23/49568 and H01L23/49575&#160;-&#160;H01L23/49579 take precedence)}	H01L23/495	H01L23/495		1001
H01L23/49575	11	{Assemblies of semiconductor devices on lead frames}	H01L23/495	H01L23/495		5286
H01L23/49579	11	{characterised by the materials of the lead frames or layers thereon}	H01L23/495	H01L23/495		545
H01L23/49582	12	{Metallic layers on lead frames}	H01L23/495	H01L23/495		2185
H01L23/49586	12	{Insulating layers on lead frames}	H01L23/495	H01L23/495		506
H01L23/49589	11	{Capacitor integral with or on the leadframe}	H01L23/495	H01L23/495		494
H01L23/49593	11	{Battery in combination with a leadframe}	H01L23/495	H01L23/495		40
H01L23/49596	11	{Oscillators in combination with lead-frames}	H01L23/495	H01L23/495		37
H01L23/498	10	Leads, {i.e. metallisations or lead-frames} on insulating substrates, {e.g. chip carriers (shape of the substrate H01L23/13)}	H01L23/498	H01L23/498		1674
H01L23/49805	11	{the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting}	H01L23/498	H01L23/498		1236
H01L23/49811	11	{Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads (H01L23/49827 takes precedence)}	H01L23/498	H01L23/498		8198
H01L23/49816	12	{Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]}	H01L23/498	H01L23/498		13461
H01L23/49822	11	{Multilayer substrates (multilayer metallisation on monolayer substrate H01L23/498)}	H01L23/498	H01L23/498		7920
H01L23/49827	11	{Via connections through the substrates, e.g. pins going through the substrate, coaxial cables (H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence)}	H01L23/498	H01L23/498		9643
H01L23/49833	11	{the chip support structure consisting of a plurality of insulating substrates}	H01L23/498	H01L23/498		2939
H01L23/49838	11	{Geometry or layout}	H01L23/498	H01L23/498		10596
H01L23/49844	12	{for individual devices of subclass H10D}	H01L23/498	H01L23/498		1033
H01L23/4985	11	{Flexible insulating substrates (H01L23/49572 and H01L23/49855 take precedence)}	H01L23/498	H01L23/498		2369
H01L23/49855	11	{for flat-cards, e.g. credit cards (cards per seG06K19/00)}	H01L23/498	H01L23/498		785
H01L23/49861	11	{Lead-frames fixed on or encapsulated in insulating substrates (H01L23/4985, H01L23/49805 take precedence)}	H01L23/498	H01L23/498		1636
H01L23/49866	11	{characterised by the materials (materials of the substrates H01L23/14, of the lead-frames H01L23/49579)}	H01L23/498	H01L23/498		1580
H01L23/49872	12	{the conductive materials containing semiconductor material}	H01L23/498	H01L23/498		75
H01L23/49877	12	{Carbon, e.g. fullerenes (superconducting fullerenes H10N60/853)}	H01L23/498	H01L23/498		91
H01L23/49883	12	{the conductive materials containing organic materials or pastes, e.g. for thick films (for printed circuits H05K1/092)}	H01L23/498	H01L23/498		533
H01L23/49888	12	{the conductive materials containing superconducting material}	H01L23/498	H01L23/498		96
H01L23/49894	12	{Materials of the insulating layers or coatings}	H01L23/498	H01L23/498		2337
H01L23/50	9	for integrated circuit devices, {e.g. power bus, number of leads}(H01L23/482&#160;-&#160;H01L23/498 take precedence)	H01L23/50	H01L23/50		5194
H01L23/52	8	Arrangements for conducting electric current within the device in operation from one component to another {, i.e. interconnections, e.g. wires, lead frames (optical interconnections G02B6/00)}	H01L23/52	H01L23/52		1199
H01L23/522	9	including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body	H01L23/522	H01L23/522		3179
H01L23/5221	10	{Crossover interconnections}	H01L23/522	H01L23/522		300
H01L23/5222	10	{Capacitive arrangements or effects of, or between wiring layers (other capacitive arrangements H01L23/642)}	H01L23/522	H01L23/522		2050
H01L23/5223	11	{Capacitor integral with wiring layers}	H01L23/522	H01L23/522		3173
H01L23/5225	11	{Shielding layers formed together with wiring layers}	H01L23/522	H01L23/522		823
H01L23/5226	10	{Via connections in a multilevel interconnection structure}	H01L23/522	H01L23/522		10146
H01L23/5227	10	{Inductive arrangements or effects of, or between, wiring layers (other inductive arrangements H01L23/645)}	H01L23/522	H01L23/522		2298
H01L23/5228	10	{Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements H01L23/647)}	H01L23/522	H01L23/522		901
H01L23/525	10	with adaptable interconnections	H01L23/525	H01L23/525		1904
H01L23/5252	11	{comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive}	H01L23/525	H01L23/525		1358
H01L23/5254	12	{the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}	H01L23/525	H01L23/525		113
H01L23/5256	11	{comprising fuses, i.e. connections having their state changed from conductive to non-conductive}	H01L23/525	H01L23/525		1987
H01L23/5258	12	{the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}	H01L23/525	H01L23/525		1159
H01L23/528	10	Layout of the interconnection structure	H01L23/528	H01L23/528		7267
H01L23/5283	11	{Cross-sectional geometry}	H01L23/528	H01L23/528		5819
H01L23/5286	11	{Arrangements of power or ground buses}	H01L23/528	H01L23/528		3676
H01L23/532	10	characterised by the materials	H01L23/532	H01L23/532		482
H01L23/53204	11	{Conductive materials}	H01L23/532	H01L23/532		174
H01L23/53209	12	{based on metals, e.g. alloys, metal silicides (H01L23/53285 takes precedence)}	H01L23/532	H01L23/532		1183
H01L23/53214	13	{the principal metal being aluminium}	H01L23/532	H01L23/532		484
H01L23/53219	14	{Aluminium alloys}	H01L23/532	H01L23/532		309
H01L23/53223	14	{Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers}	H01L23/532	H01L23/532		1546
H01L23/53228	13	{the principal metal being copper}	H01L23/532	H01L23/532		1187
H01L23/53233	14	{Copper alloys}	H01L23/532	H01L23/532		485
H01L23/53238	14	{Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers}	H01L23/532	H01L23/532		3957
H01L23/53242	13	{the principal metal being a noble metal, e.g. gold}	H01L23/532	H01L23/532		498
H01L23/53247	14	{Noble-metal alloys}	H01L23/532	H01L23/532		89
H01L23/53252	14	{Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers}	H01L23/532	H01L23/532		639
H01L23/53257	13	{the principal metal being a refractory metal}	H01L23/532	H01L23/532		954
H01L23/53261	14	{Refractory-metal alloys}	H01L23/532	H01L23/532		145
H01L23/53266	14	{Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers}	H01L23/532	H01L23/532		1443
H01L23/53271	12	{containing semiconductor material, e.g. polysilicon}	H01L23/532	H01L23/532		665
H01L23/53276	12	{containing carbon, e.g. fullerenes (superconducting fullerenes H10N60/853)}	H01L23/532	H01L23/532		485
H01L23/5328	12	{containing conductive organic materials or pastes, e.g. conductive adhesives, inks}	H01L23/532	H01L23/532		178
H01L23/53285	12	{containing superconducting materials}	H01L23/532	H01L23/532		133
H01L23/5329	11	{Insulating materials}	H01L23/532	H01L23/532		3191
H01L23/53295	12	{Stacked insulating layers}	H01L23/532	H01L23/532		3305
H01L23/535	9	including internal interconnections, e.g. cross-under constructions {(internal lead connections H01L23/481)}	H01L23/535	H01L23/535		2940
H01L23/538	9	the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates ({H05K takes precedence; manufacture or treatment H01L21/4846} ; mountings per seH01L23/12; {materials H01L23/49866})	H01L23/538	H01L23/538		1324
H01L23/5381	10	{Crossover interconnections, e.g. bridge stepovers}	H01L23/538	H01L23/538		727
H01L23/5382	10	{Adaptable interconnections, e.g. for engineering changes}	H01L23/538	H01L23/538		444
H01L23/5383	10	{Multilayer substrates (H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538)}	H01L23/538	H01L23/538		4231
H01L23/5384	10	{Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors (H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811)}	H01L23/538	H01L23/538		4341
H01L23/5385	10	{Assembly of a plurality of insulating substrates}	H01L23/538	H01L23/538		4391
H01L23/5386	10	{Geometry or layout of the interconnection structure}	H01L23/538	H01L23/538		6369
H01L23/5387	10	{Flexible insulating substrates (H01L23/5388 takes precedence)}	H01L23/538	H01L23/538		1085
H01L23/5388	10	{for flat cards, e.g. credit cards (cards per seG06K19/00)}	H01L23/538	H01L23/538		173
H01L23/5389	10	{the chips being integrally enclosed by the interconnect and support structures}	H01L23/538	H01L23/538		6920
H01L23/544	8	Marks applied to semiconductor devices {or parts}, e.g. registration marks, {alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes H01L22/00)}<br><br><u>NOTE</u><br><br>When classifying in group H01L23/544, details are to be further indexed by using the indexing codes chosen from H01L2223/544 and subgroups.	H01L23/544	H01L23/544		8735
H01L23/552	8	Protection against radiation, e.g. light {or electromagnetic waves}	H01L23/552	H01L23/552		7849
H01L23/556	9	against alpha rays	H01L23/556	H01L23/556		394
H01L23/562	8	{Protection against mechanical damage (H01L23/02, H01L23/28 take precedence)}	H01L23/00	H01L23/562		5993
H01L23/564	8	{Details not otherwise provided for, e.g. protection against moisture (getters H01L23/26)}	H01L23/00	H01L23/564		1640
H01L23/57	8	{Protection from inspection, reverse engineering or tampering}	H01L23/00	H01L23/57		287
H01L23/573	9	{using passive means}	H01L23/00	H01L23/57		481
H01L23/576	9	{using active circuits}	H01L23/00	H01L23/57		551
H01L23/58	8	Structural electrical arrangements for semiconductor devices not otherwise provided for {, e.g. in combination with batteries (H01L23/49593, H01L23/49596 take precedence)}	H01L23/58	H01L23/58		1137
H01L23/585	9	{comprising conductive layers or plates or strips or rods or rings (H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence)}	H01L23/58	H01L23/58		2312
H01L23/60	9	Protection against electrostatic charges or discharges, e.g. Faraday shields	H01L23/60	H01L23/60		3253
H01L23/62	9	Protection against overvoltage, e.g. fuses, shunts	H01L23/62	H01L23/62		1256
H01L23/64	9	Impedance arrangements	H01L23/64	H01L23/64		684
H01L23/642	10	{Capacitive arrangements (H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222)}	H01L23/64	H01L23/64		2377
H01L23/645	10	{Inductive arrangements (H01L23/647, H01L23/66 take precedence)}	H01L23/64	H01L23/64		2003
H01L23/647	10	{Resistive arrangements (H01L23/66, H01L23/62 take precedence)}	H01L23/64	H01L23/64		639
H01L23/66	10	High-frequency adaptations<br><br><u>NOTE</u><br><br>When classifying in group H01L23/66, details are to be further indexed by using the indexing codes chosen from H01L2223/66 and subgroups. 	H01L23/66	H01L23/66		7481
H01L24/00	7	{Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto}<br><br><u>NOTE</u><br><br>This group does not cover:<br>details of semiconductor bodies or of electrodes of devices provided for in subclass H10D, which details are covered by that group;<br>details peculiar to devices provided for in a single subclass of subclasses H10F, H10H, H10K or H10N, which details are covered by those places.<br>printed circuits, which are covered by groups H05K1/00&#160;-&#160;H05K1/189; <br>apparatus or manufacturing processes for printed circuits, which are covered by groups H05K3/00&#160;-&#160;H05K3/4685; <br>manufacture or treatment of parts, which are covered by group H01L21/48 and subgroups except H01L21/4885&#160;-&#160;H01L21/4896; <br>assemblies of semiconductor devices, which are covered by groups H01L21/50&#160;-&#160;H01L21/568; <br>applying interconnections to be used for carrying current between separate components within a device, which is covered by group H01L21/768 and subgroups; <br>containers or seals, which are covered by groups H01L23/02&#160;-&#160;H01L23/10; <br>mountings, which are covered by groups H01L23/12&#160;-&#160;H01L23/15 and subgroups; <br>arrangements for cooling, heating, ventilating or temperature compensation, which are covered by groups H01L23/34&#160;-&#160;H01L23/4735; <br>arrangements for conducting electric current, which are covered by groups H01L23/48&#160;-&#160;H01L23/50, and by groups H01L23/52&#160;-&#160;H01L23/5389; <br>structural electrical arrangements, which are covered by groups H01L23/58 - H01L23/66; <br>assemblies of semiconductor or other solid state devices, which are covered by groups H01L25/00&#160;-&#160;H01L25/18. <br>In this group the following indexing codes are used : H01L24/00, H01L2224/00, H01L2924/00, and subgroups thereof 	H01L23/00	H01L24/00		1134
H01L24/01	8	{Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto}	H01L23/00	H01L24/01		2841
H01L24/02	9	{Bonding areas (on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389); Manufacturing methods related thereto}	H01L23/00	H01L24/02		3452
H01L24/03	10	{Manufacturing methods}	H01L23/00	H01L24/03		8956
H01L24/04	10	{Structure, shape, material or disposition of the bonding areas prior to the connecting process}	H01L23/00	H01L24/04		851
H01L24/05	11	{of an individual bonding area}	H01L23/00	H01L24/05		19748
H01L24/06	11	{of a plurality of bonding areas}	H01L23/00	H01L24/06		8973
H01L24/07	10	{Structure, shape, material or disposition of the bonding areas after the connecting process}	H01L23/00	H01L24/07		405
H01L24/08	11	{of an individual bonding area}	H01L23/00	H01L24/08		4733
H01L24/09	11	{of a plurality of bonding areas}	H01L23/00	H01L24/09		1576
H01L24/10	9	{Bump connectors (bumps on insulating substrates, e.g. chip carriers, H01L23/49816); Manufacturing methods related thereto}	H01L23/00	H01L24/10		1870
H01L24/11	10	{Manufacturing methods (for bumps on insulating substrates H01L21/4853)}	H01L23/00	H01L24/11		10765
H01L24/12	10	{Structure, shape, material or disposition of the bump connectors prior to the connecting process}	H01L23/00	H01L24/12		1664
H01L24/13	11	{of an individual bump connector}	H01L23/00	H01L24/13		14691
H01L24/14	11	{of a plurality of bump connectors}	H01L23/00	H01L24/14		3830
H01L24/15	10	{Structure, shape, material or disposition of the bump connectors after the connecting process}	H01L23/00	H01L24/15		276
H01L24/16	11	{of an individual bump connector}	H01L23/00	H01L24/16		16809
H01L24/17	11	{of a plurality of bump connectors}	H01L23/00	H01L24/17		4055
H01L24/18	9	{High density interconnect [HDI] connectors; Manufacturing methods related thereto (interconnection structure between a plurality of semiconductor chips H01L23/5389)}	H01L23/00	H01L24/18		671
H01L24/19	10	{Manufacturing methods of high density interconnect preforms}	H01L23/00	H01L24/19		6031
H01L24/20	10	{Structure, shape, material or disposition of high density interconnect preforms}	H01L23/00	H01L24/20		3672
H01L24/23	10	{Structure, shape, material or disposition of the high density interconnect connectors after the connecting process}	H01L23/00	H01L24/23		36
H01L24/24	11	{of an individual high density interconnect connector}	H01L23/00	H01L24/24		3805
H01L24/25	11	{of a plurality of high density interconnect connectors}	H01L23/00	H01L24/25		769
H01L24/26	9	{Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto}	H01L23/00	H01L24/26		1481
H01L24/27	10	{Manufacturing methods}	H01L23/00	H01L24/27		4359
H01L24/28	10	{Structure, shape, material or disposition of the layer connectors prior to the connecting process}	H01L23/00	H01L24/28		1048
H01L24/29	11	{of an individual layer connector}	H01L23/00	H01L24/29		13086
H01L24/30	11	{of a plurality of layer connectors}	H01L23/00	H01L24/30		480
H01L24/31	10	{Structure, shape, material or disposition of the layer connectors after the connecting process}	H01L23/00	H01L24/31		718
H01L24/32	11	{of an individual layer connector}	H01L23/00	H01L24/32		19452
H01L24/33	11	{of a plurality of layer connectors}	H01L23/00	H01L24/33		3195
H01L24/34	9	{Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto}	H01L23/00	H01L24/34		311
H01L24/35	10	{Manufacturing methods}	H01L23/00	H01L24/35		134
H01L24/36	10	{Structure, shape, material or disposition of the strap connectors prior to the connecting process}	H01L23/00	H01L24/36		241
H01L24/37	11	{of an individual strap connector}	H01L23/00	H01L24/37		1936
H01L24/38	11	{of a plurality of strap connectors}	H01L23/00	H01L24/38		133
H01L24/39	10	{Structure, shape, material or disposition of the strap connectors after the connecting process}	H01L23/00	H01L24/39		63
H01L24/40	11	{of an individual strap connector}	H01L23/00	H01L24/40		2876
H01L24/41	11	{of a plurality of strap connectors}	H01L23/00	H01L24/41		597
H01L24/42	9	{Wire connectors; Manufacturing methods related thereto}	H01L23/00	H01L24/42		407
H01L24/43	10	{Manufacturing methods}	H01L23/00	H01L24/43		1316
H01L24/44	10	{Structure, shape, material or disposition of the wire connectors prior to the connecting process}	H01L23/00	H01L24/44		179
H01L24/45	11	{of an individual wire connector}	H01L23/00	H01L24/45		12705
H01L24/46	11	{of a plurality of wire connectors}	H01L23/00	H01L24/46		496
H01L24/47	10	{Structure, shape, material or disposition of the wire connectors after the connecting process}	H01L23/00	H01L24/47		397
H01L24/48	11	{of an individual wire connector}	H01L23/00	H01L24/48		28266
H01L24/49	11	{of a plurality of wire connectors}	H01L23/00	H01L24/49		11817
H01L24/50	9	{Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto (thin flexible metallic tape with or without a film carrier H01L23/49572, flexible insulating substrates H01L23/4985, H01L23/5387)}	H01L23/00	H01L24/50		1738
H01L24/63	9	{Connectors not provided for in any of the groups H01L24/10&#160;-&#160;H01L24/50 and subgroups; Manufacturing methods related thereto}	H01L23/00	H01L24/63		41
H01L24/64	10	{Manufacturing methods}	H01L23/00	H01L24/64		69
H01L24/65	10	{Structure, shape, material or disposition of the connectors prior to the connecting process}	H01L23/00	H01L24/65		21
H01L24/66	11	{of an individual connector}	H01L23/00	H01L24/66		49
H01L24/67	11	{of a plurality of connectors}	H01L23/00	H01L24/67		30
H01L24/68	10	{Structure, shape, material or disposition of the connectors after the connecting process}	H01L23/00	H01L24/68		4
H01L24/69	11	{of an individual connector}	H01L23/00	H01L24/69		40
H01L24/70	11	{of a plurality of connectors}	H01L23/00	H01L24/70		22
H01L24/71	8	{Means for bonding not being attached to, or not being formed on, the surface to be connected (holders for supporting the complete device in operation&#160; H01L23/32)}	H01L23/00	H01L24/71		50
H01L24/72	9	{Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips}	H01L23/00	H01L24/72		1529
H01L24/73	8	{Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71}	H01L23/00	H01L24/73		18542
H01L24/74	8	{Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies}	H01L23/00	H01L24/74		318
H01L24/741	9	{Apparatus for manufacturing means for bonding, e.g. connectors}	H01L23/00	H01L24/741		296
H01L24/742	10	{Apparatus for manufacturing bump connectors}	H01L23/00	H01L24/742		727
H01L24/743	10	{Apparatus for manufacturing layer connectors}	H01L23/00	H01L24/743		1686
H01L24/744	10	{Apparatus for manufacturing strap connectors}	H01L23/00	H01L24/744		14
H01L24/745	10	{Apparatus for manufacturing wire connectors}	H01L23/00	H01L24/745		253
H01L24/75	9	{Apparatus for connecting with bump connectors or layer connectors}	H01L23/00	H01L24/75		5346
H01L24/76	9	{Apparatus for connecting with build-up interconnects}	H01L23/00	H01L24/76		157
H01L24/77	9	{Apparatus for connecting with strap connectors}	H01L23/00	H01L24/77		133
H01L24/78	9	{Apparatus for connecting with wire connectors}	H01L23/00	H01L24/78		7569
H01L24/79	9	{Apparatus for Tape Automated Bonding [TAB]}	H01L23/00	H01L24/79		541
H01L24/799	9	{Apparatus for disconnecting}	H01L23/00	H01L24/799		252
H01L24/80	8	{Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected}	H01L23/00	H01L24/80		4917
H01L24/81	9	{using a bump connector}	H01L23/00	H01L24/81		13541
H01L24/82	9	{by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] (interconnection structure between a plurality of semiconductor chips H01L23/5389)}	H01L23/00	H01L24/82		3861
H01L24/83	9	{using a layer connector}	H01L23/00	H01L24/83		16011
H01L24/84	9	{using a strap connector}	H01L23/00	H01L24/84		1891
H01L24/85	9	{using a wire connector (wire bonding in general B23K20/004)}	H01L23/00	H01L24/85		7010
H01L24/86	9	{using tape automated bonding [TAB]}	H01L23/00	H01L24/86		777
H01L24/89	9	{using at least one connector not provided for in any of the groups H01L24/81&#160;-&#160;H01L24/86}	H01L23/00	H01L24/89		357
H01L24/90	8	{Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips}	H01L23/00	H01L24/90		442
H01L24/91	8	{Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80&#160;-&#160;H01L24/90}	H01L23/00	H01L24/91		441
H01L24/92	9	{Specific sequence of method steps}	H01L23/00	H01L24/92		4771
H01L24/93	8	{Batch processes}	H01L23/00	H01L24/93		99
H01L24/94	9	{at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices}	H01L23/00	H01L24/94		2896
H01L24/95	9	{at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips}	H01L23/00	H01L24/95		1573
H01L24/96	10	{the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting}	H01L23/00	H01L24/96		3000
H01L24/97	10	{the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting}	H01L23/00	H01L24/97		13341
H01L24/98	8	{Methods for disconnecting semiconductor or solid-state bodies}	H01L23/00	H01L24/98		516
H01L25/00	7	Assemblies consisting of a plurality of semiconductor or other solid state devices (devices consisting of a plurality of solid-state components formed in or on a common substrate H10D89/00; photovoltaic modules or arrays of photovoltaic cells H10F19/00)<br><br><u>NOTE</u><br><br>Due to the ongoing developments in class H10 and related subclasses, the information displayed in notes, references and definitions of this main group and indents may not be entirely accurate. For each specific subject matter referred to in this main group and indents, users are invited to consult the relevant place in class H10 and to consider the class H10 information as correct, in case of conflict	H01L25/00	H01L25/00		884
H01L25/03	8	all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes	H01L25/03	H01L25/03		1780
H01L25/04	9	the devices not having separate containers<br><br><u>WARNING</u><br>Group H01L25/04 is impacted by reclassification into groups H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/04	H01L25/04		759
H01L25/041	10	{the devices being of a type provided for in subclass H10F}	H01L25/04	H01L25/04		45
H01L25/042	11	{the devices being arranged next to each other (solar cells H10F19/00)}	H01L25/04	H01L25/04		274
H01L25/043	11	{Stacked arrangements of devices}	H01L25/04	H01L25/04		274
H01L25/065	10	the devices being of a type provided for in group H10D89/00<br><br><u>NOTE</u><br><br>Group H01L25/0652 takes precedence over groups H01L25/0655 and H01L25/0657.<br><br><u>WARNING</u><br>Group H01L25/065 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/065	H01L25/065		1165
H01L25/0652	11	{the devices being arranged next and on each other, i.e. mixed assemblies}<br><br><u>WARNING</u><br>Group H01L25/0652 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/065	H01L25/065		5443
H01L25/0655	11	{the devices being arranged next to each other}<br><br><u>WARNING</u><br>Group H01L25/0655 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/065	H01L25/065		7042
H01L25/0657	11	{Stacked arrangements of devices}<br><br><u>WARNING</u><br>Group H01L25/0657 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/065	H01L25/065		16349
H01L25/07	10	the devices being of a type provided for in group subclass H10D<br><br><u>NOTE</u><br><br>Group H01L25/071 takes precedence over groups H01L25/072&#160;-&#160;H01L25/074.	H01L25/07	H01L25/07		1808
H01L25/071	11	{the devices being arranged next and on each other, i.e. mixed assemblies}	H01L25/07	H01L25/07		703
H01L25/072	11	{the devices being arranged next to each other}	H01L25/07	H01L25/07		5559
H01L25/073	11	{Apertured devices mounted on one or more rods passed through the apertures}	H01L25/07	H01L25/07		793
H01L25/074	11	{Stacked arrangements of non-apertured devices}	H01L25/07	H01L25/07		1388
H01L25/075	10	the devices being of a type provided for in group H10H20/00	H01L25/075	H01L25/075		1072
H01L25/0753	11	{the devices being arranged next to each other}	H01L25/075	H01L25/075		18133
H01L25/0756	11	{Stacked arrangements of devices}	H01L25/075	H01L25/075		854
H01L25/10	9	the devices having separate containers	H01L25/10	H01L25/10		326
H01L25/105	10	{the devices being integrated devices of class H10}<br><br><u>NOTE</u><br><br>When classifying in group H01L25/105, details of the assemblies are to be further indexed by using the indexing codes chosen from H01L2225/1005 and subgroups.	H01L25/10	H01L25/10		6538
H01L25/11	10	the devices being of a type provided for in subclass H10D<br><br><u>NOTE</u><br><br>Group H01L25/112 takes precedence over groups H01L25/115 and H01L25/117.	H01L25/11	H01L25/11		160
H01L25/112	11	{Mixed assemblies}	H01L25/11	H01L25/11		291
H01L25/115	11	{the devices being arranged next to each other}	H01L25/11	H01L25/11		787
H01L25/117	11	{Stacked arrangements of devices}	H01L25/11	H01L25/11		648
H01L25/13	10	the devices being of a type provided for in group H10H20/00	H01L25/13	H01L25/13		578
H01L25/16	8	the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits<br><br><u>WARNING</u><br>Group H01L25/16 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/16	H01L25/16		7129
H01L25/162	9	{the devices being mounted on two or more different substrates}<br><br><u>WARNING</u><br>Group H01L25/162 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/16	H01L25/16		1151
H01L25/165	9	{Containers}<br><br><u>WARNING</u><br>Group H01L25/165 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/16	H01L25/16		1407
H01L25/167	9	{comprising optoelectronic devices, e.g. LED, photodiodes}<br><br><u>WARNING</u><br>Group H01L25/167 is impacted by reclassification into groups H10B80/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/16	H01L25/16		9585
H01L25/18	8	the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N<br><br><u>WARNING</u><br>Group H01L25/18 is impacted by reclassification into groups H10B80/00, H10K19/00, H10K39/10, H10K39/12, H10K39/15, H10K39/18, H10K39/601, H10K39/621, H10K59/90, H10K59/95, H10K65/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00 and H10N89/00.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H01L25/18	H01L25/18		12174
H01L25/50	8	{Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10(H01L21/50 takes precedence)}	H01L25/00	H01L25/50		12654
H01L2221/00	7	Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00	CPCONLY	H01L2221/00		92
H01L2221/10	8	Applying interconnections to be used for carrying current between separate components within a device	CPCONLY	H01L2221/10		16
H01L2221/1005	9	Formation and after-treatment of dielectrics	CPCONLY	H01L2221/1005		48
H01L2221/101	10	Forming openings in dielectrics	CPCONLY	H01L2221/101		175
H01L2221/1015	11	for dual damascene structures	CPCONLY	H01L2221/1015		34
H01L2221/1021	12	Pre-forming the dual damascene structure in a resist layer	CPCONLY	H01L2221/1021		73
H01L2221/1026	12	the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar	CPCONLY	H01L2221/1026		95
H01L2221/1031	12	Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric	CPCONLY	H01L2221/1031		182
H01L2221/1036	12	Dual damascene with different via-level and trench-level dielectrics	CPCONLY	H01L2221/1036		179
H01L2221/1042	10	the dielectric comprising air gaps	CPCONLY	H01L2221/1042		54
H01L2221/1047	11	the air gaps being formed by pores in the dielectric	CPCONLY	H01L2221/1047		368
H01L2221/1052	10	Formation of thin functional dielectric layers	CPCONLY	H01L2221/1052		55
H01L2221/1057	11	in via holes or trenches	CPCONLY	H01L2221/1057		73
H01L2221/1063	12	Sacrificial or temporary thin dielectric films in openings in a dielectric	CPCONLY	H01L2221/1063		458
H01L2221/1068	9	Formation and after-treatment of conductors	CPCONLY	H01L2221/1068		274
H01L2221/1073	10	Barrier, adhesion or liner layers	CPCONLY	H01L2221/1073		82
H01L2221/1078	11	Multiple stacked thin films not being formed in openings in dielectrics	CPCONLY	H01L2221/1078		133
H01L2221/1084	11	Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers	CPCONLY	H01L2221/1084		28
H01L2221/1089	12	Stacks of seed layers	CPCONLY	H01L2221/1089		331
H01L2221/1094	10	Conducting structures comprising nanotubes or nanowires	CPCONLY	H01L2221/1094		317
H01L2221/67	8	Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere	CPCONLY	H01L2221/67		229
H01L2221/683	9	for supporting or gripping	CPCONLY	H01L2221/683		242
H01L2221/68304	10	using temporarily an auxiliary support	CPCONLY	H01L2221/68304		396
H01L2221/68309	11	Auxiliary support including alignment aids	CPCONLY	H01L2221/68309		206
H01L2221/68313	11	Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting	CPCONLY	H01L2221/68313		537
H01L2221/68318	11	Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support	CPCONLY	H01L2221/68318		1138
H01L2221/68322	12	Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support	CPCONLY	H01L2221/68322		870
H01L2221/68327	11	used during dicing or grinding	CPCONLY	H01L2221/68327		5594
H01L2221/68331	12	of passive members, e.g. die mounting substrate	CPCONLY	H01L2221/68331		498
H01L2221/68336	12	involving stretching of the auxiliary support post dicing	CPCONLY	H01L2221/68336		673
H01L2221/6834	11	used to protect an active side of a device or wafer	CPCONLY	H01L2221/6834		2180
H01L2221/68345	11	used as a support during the manufacture of self supporting substrates	CPCONLY	H01L2221/68345		3171
H01L2221/6835	11	used as a support during build up manufacturing of active devices	CPCONLY	H01L2221/6835		701
H01L2221/68354	11	used to support diced chips prior to mounting	CPCONLY	H01L2221/68354		1006
H01L2221/68359	11	used as a support during manufacture of interconnect decals or build up layers	CPCONLY	H01L2221/68359		2289
H01L2221/68363	11	used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate	CPCONLY	H01L2221/68363		1080
H01L2221/68368	11	used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate	CPCONLY	H01L2221/68368		1458
H01L2221/68372	11	used to support a device or wafer when forming electrical connections thereto	CPCONLY	H01L2221/68372		1030
H01L2221/68377	11	with parts of the auxiliary support remaining in the finished device	CPCONLY	H01L2221/68377		749
H01L2221/68381	11	Details of chemical or physical process used for separating the auxiliary support from a device or wafer	CPCONLY	H01L2221/68381		2697
H01L2221/68386	12	Separation by peeling	CPCONLY	H01L2221/68386		1185
H01L2221/6839	13	using peeling wedge or knife or bar	CPCONLY	H01L2221/6839		173
H01L2221/68395	13	using peeling wheel	CPCONLY	H01L2221/68395		66
H01L2223/00	7	Details relating to semiconductor or other solid state devices covered by the group H01L23/00	CPCONLY	H01L2223/00		9
H01L2223/544	8	Marks applied to semiconductor devices or parts	CPCONLY	H01L2223/544		55
H01L2223/54406	9	comprising alphanumeric information	CPCONLY	H01L2223/54406		747
H01L2223/54413	9	comprising digital information, e.g. bar codes, data matrix	CPCONLY	H01L2223/54413		417
H01L2223/5442	9	comprising non digital, non alphanumeric information, e.g. symbols	CPCONLY	H01L2223/5442		1246
H01L2223/54426	9	for alignment	CPCONLY	H01L2223/54426		4047
H01L2223/54433	9	containing identification or tracking information	CPCONLY	H01L2223/54433		930
H01L2223/5444	10	for electrical read out	CPCONLY	H01L2223/5444		327
H01L2223/54446	11	Wireless electrical read out	CPCONLY	H01L2223/54446		30
H01L2223/54453	9	for use prior to dicing	CPCONLY	H01L2223/54453		1596
H01L2223/5446	10	Located in scribe lines	CPCONLY	H01L2223/5446		1007
H01L2223/54466	10	Located in a dummy or reference die	CPCONLY	H01L2223/54466		126
H01L2223/54473	9	for use after dicing	CPCONLY	H01L2223/54473		1157
H01L2223/5448	10	Located on chip prior to dicing and remaining on chip after dicing	CPCONLY	H01L2223/5448		597
H01L2223/54486	10	Located on package parts, e.g. encapsulation, leads, package substrate	CPCONLY	H01L2223/54486		1215
H01L2223/54493	9	Peripheral marks on wafers, e.g. orientation flats, notches, lot number	CPCONLY	H01L2223/54493		715
H01L2223/58	8	Structural electrical arrangements for semiconductor devices not otherwise provided for	CPCONLY	H01L2223/58		17
H01L2223/64	9	Impedance arrangements	CPCONLY	H01L2223/64		16
H01L2223/66	10	High-frequency adaptations	CPCONLY	H01L2223/66		23
H01L2223/6605	11	High-frequency electrical connections	CPCONLY	H01L2223/6605		128
H01L2223/6611	12	Wire connections	CPCONLY	H01L2223/6611		992
H01L2223/6616	12	Vertical connections, e.g. vias	CPCONLY	H01L2223/6616		706
H01L2223/6622	13	Coaxial feed-throughs in active or passive substrates	CPCONLY	H01L2223/6622		392
H01L2223/6627	12	Waveguides, e.g. microstrip line, strip line, coplanar line	CPCONLY	H01L2223/6627		1274
H01L2223/6633	13	Transition between different waveguide types	CPCONLY	H01L2223/6633		108
H01L2223/6638	12	Differential pair signal lines	CPCONLY	H01L2223/6638		189
H01L2223/6644	11	Packaging aspects of high-frequency amplifiers	CPCONLY	H01L2223/6644		867
H01L2223/665	12	Bias feed arrangements	CPCONLY	H01L2223/665		183
H01L2223/6655	12	Matching arrangements, e.g. arrangement of inductive and capacitive components	CPCONLY	H01L2223/6655		865
H01L2223/6661	11	for passive devices	CPCONLY	H01L2223/6661		114
H01L2223/6666	12	for decoupling, e.g. bypass capacitors	CPCONLY	H01L2223/6666		93
H01L2223/6672	12	for integrated passive components, e.g. semiconductor device with passive components only	CPCONLY	H01L2223/6672		280
H01L2223/6677	12	for antenna, e.g. antenna included within housing of semiconductor device	CPCONLY	H01L2223/6677		2894
H01L2223/6683	11	for monolithic microwave integrated circuit [MMIC]	CPCONLY	H01L2223/6683		392
H01L2223/6688	11	Mixed frequency adaptations, i.e. for operation at different frequencies	CPCONLY	H01L2223/6688		159
H01L2223/6694	11	Optical signal interface included within high-frequency semiconductor device housing	CPCONLY	H01L2223/6694		27
H01L2224/00	7	Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00	CPCONLY	H01L2224/00		11
H01L2224/01	8	Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto	CPCONLY	H01L2224/01		706
H01L2224/02	9	Bonding areas; Manufacturing methods related thereto	CPCONLY	H01L2224/02		478
H01L2224/0212	10	Auxiliary members for bonding areas, e.g. spacers	CPCONLY	H01L2224/0212		24
H01L2224/02122	11	being formed on the semiconductor or solid-state body	CPCONLY	H01L2224/02122		28
H01L2224/02123	12	inside the bonding area	CPCONLY	H01L2224/02123		32
H01L2224/02125	13	Reinforcing structures	CPCONLY	H01L2224/02125		201
H01L2224/02126	14	Collar structures	CPCONLY	H01L2224/02126		305
H01L2224/0213	13	Alignment aids	CPCONLY	H01L2224/0213		23
H01L2224/02135	13	Flow barrier	CPCONLY	H01L2224/02135		14
H01L2224/0214	13	Structure of the auxiliary member	CPCONLY	H01L2224/0214		25
H01L2224/02141	14	Multilayer auxiliary member	CPCONLY	H01L2224/02141		27
H01L2224/02145	13	Shape of the auxiliary member	CPCONLY	H01L2224/02145		82
H01L2224/0215	13	Material of the auxiliary member	CPCONLY	H01L2224/0215		75
H01L2224/02163	12	on the bonding area	CPCONLY	H01L2224/02163		19
H01L2224/02165	13	Reinforcing structures	CPCONLY	H01L2224/02165		35
H01L2224/02166	14	Collar structures	CPCONLY	H01L2224/02166		3313
H01L2224/0217	13	Alignment aids	CPCONLY	H01L2224/0217		31
H01L2224/02175	13	Flow barrier	CPCONLY	H01L2224/02175		40
H01L2224/0218	13	Structure of the auxiliary member	CPCONLY	H01L2224/0218		27
H01L2224/02181	14	Multilayer auxiliary member	CPCONLY	H01L2224/02181		39
H01L2224/02185	13	Shape of the auxiliary member	CPCONLY	H01L2224/02185		47
H01L2224/0219	13	Material of the auxiliary member	CPCONLY	H01L2224/0219		109
H01L2224/022	13	Protective coating, i.e. protective bond-through coating	CPCONLY	H01L2224/022		40
H01L2224/02205	14	Structure of the protective coating	CPCONLY	H01L2224/02205		22
H01L2224/02206	15	Multilayer protective coating	CPCONLY	H01L2224/02206		58
H01L2224/0221	14	Shape of the protective coating	CPCONLY	H01L2224/0221		46
H01L2224/02215	14	Material of the protective coating	CPCONLY	H01L2224/02215		79
H01L2224/02233	12	not in direct contact with the bonding area	CPCONLY	H01L2224/02233		40
H01L2224/02235	13	Reinforcing structures	CPCONLY	H01L2224/02235		77
H01L2224/0224	13	Alignment aids	CPCONLY	H01L2224/0224		37
H01L2224/02245	13	Flow barrier	CPCONLY	H01L2224/02245		25
H01L2224/0225	13	Structure of the auxiliary member	CPCONLY	H01L2224/0225		25
H01L2224/02251	14	Multilayer auxiliary member	CPCONLY	H01L2224/02251		22
H01L2224/02255	13	Shape of the auxiliary member	CPCONLY	H01L2224/02255		72
H01L2224/0226	13	Material of the auxiliary member	CPCONLY	H01L2224/0226		56
H01L2224/023	10	Redistribution layers [RDL] for bonding areas	CPCONLY	H01L2224/023		1963
H01L2224/0231	11	Manufacturing methods of the redistribution layers	CPCONLY	H01L2224/0231		1914
H01L2224/02311	12	Additive methods	CPCONLY	H01L2224/02311		436
H01L2224/02313	12	Subtractive methods	CPCONLY	H01L2224/02313		416
H01L2224/02315	12	Self-assembly processes	CPCONLY	H01L2224/02315		31
H01L2224/02317	12	by local deposition	CPCONLY	H01L2224/02317		81
H01L2224/02319	12	by using a preform	CPCONLY	H01L2224/02319		124
H01L2224/02321	12	Reworking	CPCONLY	H01L2224/02321		77
H01L2224/0233	11	Structure of the redistribution layers	CPCONLY	H01L2224/0233		283
H01L2224/02331	12	Multilayer structure	CPCONLY	H01L2224/02331		1784
H01L2224/02333	12	being a bump	CPCONLY	H01L2224/02333		602
H01L2224/02335	12	Free-standing redistribution layers	CPCONLY	H01L2224/02335		105
H01L2224/0235	11	Shape of the redistribution layers	CPCONLY	H01L2224/0235		452
H01L2224/02351	12	comprising interlocking features	CPCONLY	H01L2224/02351		182
H01L2224/0236	11	Shape of the insulating layers therebetween	CPCONLY	H01L2224/0236		313
H01L2224/0237	11	Disposition of the redistribution layers	CPCONLY	H01L2224/0237		193
H01L2224/02371	12	connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body	CPCONLY	H01L2224/02371		759
H01L2224/02372	12	connecting to a via connection in the semiconductor or solid-state body	CPCONLY	H01L2224/02372		1178
H01L2224/02373	12	Layout of the redistribution layers	CPCONLY	H01L2224/02373		688
H01L2224/02375	12	Top view	CPCONLY	H01L2224/02375		504
H01L2224/02377	12	Fan-in arrangement	CPCONLY	H01L2224/02377		692
H01L2224/02379	12	Fan-out arrangement	CPCONLY	H01L2224/02379		1800
H01L2224/02381	12	Side view	CPCONLY	H01L2224/02381		1914
H01L2224/0239	11	Material of the redistribution layers	CPCONLY	H01L2224/0239		691
H01L2224/024	11	Material of the insulating layers therebetween	CPCONLY	H01L2224/024		343
H01L2224/03	10	Manufacturing methods	CPCONLY	H01L2224/03		1780
H01L2224/03001	11	Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/03001		69
H01L2224/03002	12	for supporting the semiconductor or solid-state body	CPCONLY	H01L2224/03002		294
H01L2224/03003	12	for holding or transferring a preform	CPCONLY	H01L2224/03003		45
H01L2224/03005	12	for aligning the bonding area, e.g. marks, spacers	CPCONLY	H01L2224/03005		29
H01L2224/03009	12	for protecting parts during manufacture	CPCONLY	H01L2224/03009		118
H01L2224/03011	11	Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature	CPCONLY	H01L2224/03011		82
H01L2224/03013	12	for holding or confining the bonding area, e.g. solder flow barrier	CPCONLY	H01L2224/03013		59
H01L2224/03015	12	for aligning the bonding area, e.g. marks, spacers	CPCONLY	H01L2224/03015		23
H01L2224/03019	12	for protecting parts during the process	CPCONLY	H01L2224/03019		85
H01L2224/031	11	Manufacture and pre-treatment of the bonding area preform	CPCONLY	H01L2224/031		97
H01L2224/0311	12	Shaping	CPCONLY	H01L2224/0311		46
H01L2224/0312	12	Applying permanent coating	CPCONLY	H01L2224/0312		32
H01L2224/033	11	by local deposition of the material of the bonding area	CPCONLY	H01L2224/033		37
H01L2224/0331	12	in liquid form	CPCONLY	H01L2224/0331		28
H01L2224/03312	13	Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion	CPCONLY	H01L2224/03312		35
H01L2224/03318	13	by dispensing droplets	CPCONLY	H01L2224/03318		36
H01L2224/0332	13	Screen printing, i.e. using a stencil	CPCONLY	H01L2224/0332		98
H01L2224/0333	12	in solid form	CPCONLY	H01L2224/0333		10
H01L2224/03332	13	using a powder	CPCONLY	H01L2224/03332		23
H01L2224/03334	13	using a preform	CPCONLY	H01L2224/03334		95
H01L2224/034	11	by blanket deposition of the material of the bonding area	CPCONLY	H01L2224/034		216
H01L2224/0341	12	in liquid form	CPCONLY	H01L2224/0341		8
H01L2224/03416	13	Spin coating	CPCONLY	H01L2224/03416		28
H01L2224/03418	13	Spray coating	CPCONLY	H01L2224/03418		23
H01L2224/0342	13	Curtain coating	CPCONLY	H01L2224/0342		
H01L2224/03422	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/03422		9
H01L2224/03424	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/03424		28
H01L2224/03426	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/03426		9
H01L2224/03428	13	Wave coating	CPCONLY	H01L2224/03428		
H01L2224/0343	12	in solid form	CPCONLY	H01L2224/0343		4
H01L2224/03436	13	Lamination of a preform, e.g. foil, sheet or layer	CPCONLY	H01L2224/03436		34
H01L2224/03438	14	the preform being at least partly pre-patterned	CPCONLY	H01L2224/03438		16
H01L2224/0344	14	by transfer printing	CPCONLY	H01L2224/0344		53
H01L2224/03442	13	using a powder	CPCONLY	H01L2224/03442		20
H01L2224/03444	12	in gaseous form	CPCONLY	H01L2224/03444		34
H01L2224/0345	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/0345		1471
H01L2224/03452	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/03452		496
H01L2224/0346	12	Plating	CPCONLY	H01L2224/0346		651
H01L2224/03462	13	Electroplating	CPCONLY	H01L2224/03462		898
H01L2224/03464	13	Electroless plating	CPCONLY	H01L2224/03464		512
H01L2224/03466	12	Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface	CPCONLY	H01L2224/03466		47
H01L2224/0347	11	using a lift-off mask	CPCONLY	H01L2224/0347		544
H01L2224/03472	12	Profile of the lift-off mask	CPCONLY	H01L2224/03472		68
H01L2224/03474	12	Multilayer masks	CPCONLY	H01L2224/03474		19
H01L2224/0348	12	Permanent masks, i.e. masks left in the finished device, e.g. passivation layers	CPCONLY	H01L2224/0348		146
H01L2224/035	11	by chemical or physical modification of a pre-existing or pre-deposited material	CPCONLY	H01L2224/035		39
H01L2224/03502	12	Pre-existing or pre-deposited material	CPCONLY	H01L2224/03502		18
H01L2224/03505	12	Sintering	CPCONLY	H01L2224/03505		126
H01L2224/0351	12	Anodisation	CPCONLY	H01L2224/0351		1
H01L2224/03515	12	Curing and solidification, e.g. of a photosensitive material	CPCONLY	H01L2224/03515		26
H01L2224/0352	12	Self-assembly, e.g. self-agglomeration of the material in a fluid	CPCONLY	H01L2224/0352		4
H01L2224/03522	13	Auxiliary means therefor, e.g. for self-assembly activation	CPCONLY	H01L2224/03522		3
H01L2224/03524	13	with special adaptation of the surface of the body to be connected or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process	CPCONLY	H01L2224/03524		
H01L2224/0355	12	Selective modification	CPCONLY	H01L2224/0355		11
H01L2224/03552	13	using a laser or a focussed ion beam [FIB]	CPCONLY	H01L2224/03552		34
H01L2224/03554	14	Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin	CPCONLY	H01L2224/03554		4
H01L2224/036	11	by patterning a pre-deposited material	CPCONLY	H01L2224/036		93
H01L2224/03602	12	Mechanical treatment, e.g. polishing, grinding	CPCONLY	H01L2224/03602		106
H01L2224/0361	12	Physical or chemical etching	CPCONLY	H01L2224/0361		564
H01L2224/03612	13	by physical means only	CPCONLY	H01L2224/03612		55
H01L2224/03614	13	by chemical means only	CPCONLY	H01L2224/03614		293
H01L2224/03616	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/03616		267
H01L2224/03618	12	with selective exposure, development and removal of a photosensitive material, e.g. of a photosensitive conductive resin	CPCONLY	H01L2224/03618		27
H01L2224/0362	13	Photolithography	CPCONLY	H01L2224/0362		241
H01L2224/03622	12	using masks	CPCONLY	H01L2224/03622		255
H01L2224/0363	12	using a laser or a focused ion beam [FIB]	CPCONLY	H01L2224/0363		15
H01L2224/03632	13	Ablation by means of a laser or focused ion beam [FIB]	CPCONLY	H01L2224/03632		26
H01L2224/037	11	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/037		21
H01L2224/038	11	Post-treatment of the bonding area	CPCONLY	H01L2224/038		38
H01L2224/0381	12	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/0381		194
H01L2224/0382	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/0382		84
H01L2224/03821	13	Spray coating	CPCONLY	H01L2224/03821		8
H01L2224/03822	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/03822		4
H01L2224/03823	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/03823		12
H01L2224/03824	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/03824		
H01L2224/03825	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/03825		47
H01L2224/03826	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/03826		41
H01L2224/03827	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/03827		20
H01L2224/03828	12	Applying flux	CPCONLY	H01L2224/03828		145
H01L2224/03829	12	Applying a precursor material	CPCONLY	H01L2224/03829		9
H01L2224/0383	12	Reworking, e.g. shaping	CPCONLY	H01L2224/0383		29
H01L2224/03831	13	involving a chemical process, e.g. etching the bonding area	CPCONLY	H01L2224/03831		160
H01L2224/0384	13	involving a mechanical process, e.g. planarising the bonding area	CPCONLY	H01L2224/0384		122
H01L2224/03845	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/03845		149
H01L2224/03848	12	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/03848		151
H01L2224/03849	13	Reflowing	CPCONLY	H01L2224/03849		50
H01L2224/039	11	Methods of manufacturing bonding areas involving a specific sequence of method steps	CPCONLY	H01L2224/039		128
H01L2224/03901	12	with repetition of the same manufacturing step	CPCONLY	H01L2224/03901		64
H01L2224/03902	13	Multiple masking steps	CPCONLY	H01L2224/03902		4
H01L2224/03903	14	using different masks	CPCONLY	H01L2224/03903		45
H01L2224/03906	14	with modification of the same mask	CPCONLY	H01L2224/03906		11
H01L2224/0391	12	Forming a passivation layer after forming the bonding area	CPCONLY	H01L2224/0391		404
H01L2224/03912	12	the bump being used as a mask for patterning the bonding area	CPCONLY	H01L2224/03912		622
H01L2224/03914	12	the bonding area, e.g. under bump metallisation [UBM], being used as a mask for patterning other parts	CPCONLY	H01L2224/03914		188
H01L2224/03916	12	a passivation layer being used as a mask for patterning the bonding area	CPCONLY	H01L2224/03916		25
H01L2224/0392	12	specifically adapted to include a probing step	CPCONLY	H01L2224/0392		197
H01L2224/03921	13	by repairing the bonding area damaged by the probing step	CPCONLY	H01L2224/03921		31
H01L2224/04	10	Structure, shape, material or disposition of the bonding areas prior to the connecting process	CPCONLY	H01L2224/04		199
H01L2224/0401	11	Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]	CPCONLY	H01L2224/0401		14115
H01L2224/04026	11	Bonding areas specifically adapted for layer connectors	CPCONLY	H01L2224/04026		1686
H01L2224/04034	11	Bonding areas specifically adapted for strap connectors	CPCONLY	H01L2224/04034		253
H01L2224/04042	11	Bonding areas specifically adapted for wire connectors, e.g. wirebond pads	CPCONLY	H01L2224/04042		8715
H01L2224/0405	11	Bonding areas specifically adapted for tape automated bonding [TAB] connectors	CPCONLY	H01L2224/0405		16
H01L2224/04073	11	Bonding areas specifically adapted for connectors of different types	CPCONLY	H01L2224/04073		163
H01L2224/04105	11	Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages	CPCONLY	H01L2224/04105		7266
H01L2224/05	11	of an individual bonding area	CPCONLY	H01L2224/05		797
H01L2224/05001	12	Internal layers	CPCONLY	H01L2224/05001		1910
H01L2224/05005	13	Structure	CPCONLY	H01L2224/05005		267
H01L2224/05006	14	Dual damascene structure	CPCONLY	H01L2224/05006		98
H01L2224/05007	14	comprising a core and a coating	CPCONLY	H01L2224/05007		97
H01L2224/05008	14	Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.	CPCONLY	H01L2224/05008		1171
H01L2224/05009	14	Bonding area integrally formed with a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/05009		891
H01L2224/0501	13	Shape	CPCONLY	H01L2224/0501		40
H01L2224/05011	14	comprising apertures or cavities	CPCONLY	H01L2224/05011		158
H01L2224/05012	14	in top view	CPCONLY	H01L2224/05012		156
H01L2224/05013	15	being rectangular	CPCONLY	H01L2224/05013		119
H01L2224/05014	15	being square	CPCONLY	H01L2224/05014		97
H01L2224/05015	15	being circular or elliptic	CPCONLY	H01L2224/05015		124
H01L2224/05016	14	in side view	CPCONLY	H01L2224/05016		157
H01L2224/05017	15	comprising protrusions or indentations	CPCONLY	H01L2224/05017		312
H01L2224/05018	15	being a conformal layer on a patterned surface	CPCONLY	H01L2224/05018		307
H01L2224/05019	15	being a non conformal layer on a patterned surface	CPCONLY	H01L2224/05019		72
H01L2224/0502	13	Disposition	CPCONLY	H01L2224/0502		52
H01L2224/05022	14	the internal layer being at least partially embedded in the surface	CPCONLY	H01L2224/05022		1595
H01L2224/05023	14	the whole internal layer protruding from the surface	CPCONLY	H01L2224/05023		557
H01L2224/05024	14	the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/05024		606
H01L2224/05025	14	the internal layer being disposed on a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/05025		486
H01L2224/05026	14	the internal layer being disposed in a recess of the surface	CPCONLY	H01L2224/05026		616
H01L2224/05027	15	the internal layer extending out of an opening	CPCONLY	H01L2224/05027		729
H01L2224/05073	13	Single internal layer	CPCONLY	H01L2224/05073		1094
H01L2224/05075	13	Plural internal layers	CPCONLY	H01L2224/05075		22
H01L2224/05076	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/05076		55
H01L2224/05078	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/05078		47
H01L2224/0508	14	being stacked	CPCONLY	H01L2224/0508		489
H01L2224/05082	15	Two-layer arrangements	CPCONLY	H01L2224/05082		938
H01L2224/05083	15	Three-layer arrangements	CPCONLY	H01L2224/05083		452
H01L2224/05084	15	Four-layer arrangements	CPCONLY	H01L2224/05084		135
H01L2224/05085	15	with additional elements, e.g. vias arrays, interposed between the stacked layers	CPCONLY	H01L2224/05085		78
H01L2224/05086	16	Structure of the additional element	CPCONLY	H01L2224/05086		13
H01L2224/05087	17	being a via with at least a lining layer	CPCONLY	H01L2224/05087		21
H01L2224/05088	16	Shape of the additional element	CPCONLY	H01L2224/05088		37
H01L2224/05089	16	Disposition of the additional element	CPCONLY	H01L2224/05089		6
H01L2224/0509	17	of a single via	CPCONLY	H01L2224/0509		12
H01L2224/05091	18	at the center of the internal layers	CPCONLY	H01L2224/05091		24
H01L2224/05092	18	at the periphery of the internal layers	CPCONLY	H01L2224/05092		13
H01L2224/05093	17	of a plurality of vias	CPCONLY	H01L2224/05093		703
H01L2224/05094	18	at the center of the internal layers	CPCONLY	H01L2224/05094		58
H01L2224/05095	18	at the periphery of the internal layers	CPCONLY	H01L2224/05095		182
H01L2224/05096	18	Uniform arrangement, i.e. array	CPCONLY	H01L2224/05096		335
H01L2224/05097	18	Random arrangement	CPCONLY	H01L2224/05097		14
H01L2224/05098	16	Material of the additional element	CPCONLY	H01L2224/05098		30
H01L2224/05099	13	Material	CPCONLY	H01L2224/05099		1085
H01L2224/051	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/051		242
H01L2224/05101	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05101		8
H01L2224/05105	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05105		14
H01L2224/05109	16	Indium [In] as principal constituent	CPCONLY	H01L2224/05109		51
H01L2224/05111	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05111		333
H01L2224/05113	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05113		27
H01L2224/05114	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05114		3
H01L2224/05116	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05116		68
H01L2224/05117	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05117		26
H01L2224/05118	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05118		74
H01L2224/0512	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0512		13
H01L2224/05123	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05123		30
H01L2224/05124	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05124		2898
H01L2224/05138	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05138		129
H01L2224/05139	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05139		604
H01L2224/05144	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/05144		1122
H01L2224/05147	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05147		3150
H01L2224/05149	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05149		39
H01L2224/05155	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05155		2075
H01L2224/05157	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05157		238
H01L2224/0516	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0516		32
H01L2224/05163	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05163		39
H01L2224/05164	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05164		560
H01L2224/05166	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05166		2572
H01L2224/05169	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05169		347
H01L2224/0517	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0517		40
H01L2224/05171	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05171		819
H01L2224/05172	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05172		103
H01L2224/05173	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05173		46
H01L2224/05176	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05176		94
H01L2224/05178	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05178		30
H01L2224/05179	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05179		43
H01L2224/0518	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0518		176
H01L2224/05181	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05181		686
H01L2224/05183	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05183		21
H01L2224/05184	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05184		1018
H01L2224/05186	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05186		560
H01L2224/05187	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05187		282
H01L2224/05188	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05188		12
H01L2224/0519	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0519		58
H01L2224/05191	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05191		10
H01L2224/05193	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/051&#160;-&#160;H01L2224/05191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05193		26
H01L2224/05194	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/051&#160;-&#160;H01L2224/05191	CPCONLY	H01L2224/05194		
H01L2224/05195	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/051&#160;-&#160;H01L2224/05191	CPCONLY	H01L2224/05195		2
H01L2224/05198	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05198		3
H01L2224/05199	15	Material of the matrix	CPCONLY	H01L2224/05199		5
H01L2224/052	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/052		4
H01L2224/05201	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05201		
H01L2224/05205	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05205		1
H01L2224/05209	18	Indium [In] as principal constituent	CPCONLY	H01L2224/05209		1
H01L2224/05211	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05211		2
H01L2224/05213	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05213		1
H01L2224/05214	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05214		1
H01L2224/05216	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05216		
H01L2224/05217	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05217		
H01L2224/05218	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05218		
H01L2224/0522	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0522		
H01L2224/05223	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05223		
H01L2224/05224	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05224		1
H01L2224/05238	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05238		1
H01L2224/05239	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05239		3
H01L2224/05244	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/05244		
H01L2224/05247	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05247		3
H01L2224/05249	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05249		
H01L2224/05255	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05255		3
H01L2224/05257	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05257		
H01L2224/0526	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0526		
H01L2224/05263	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05263		
H01L2224/05264	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05264		1
H01L2224/05266	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05266		
H01L2224/05269	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05269		
H01L2224/0527	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0527		
H01L2224/05271	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05271		
H01L2224/05272	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05272		
H01L2224/05273	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05273		
H01L2224/05276	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05276		
H01L2224/05278	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05278		
H01L2224/05279	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05279		
H01L2224/0528	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0528		
H01L2224/05281	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05281		
H01L2224/05283	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05283		
H01L2224/05284	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05284		
H01L2224/05286	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05286		2
H01L2224/05287	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05287		1
H01L2224/05288	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05288		
H01L2224/0529	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0529		20
H01L2224/05291	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05291		1
H01L2224/05293	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/052&#160;-&#160;H01L2224/05291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05293		2
H01L2224/05294	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/052&#160;-&#160;H01L2224/05291	CPCONLY	H01L2224/05294		6
H01L2224/05295	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/052&#160;-&#160;H01L2224/05291	CPCONLY	H01L2224/05295		
H01L2224/05298	15	Fillers	CPCONLY	H01L2224/05298		1
H01L2224/05299	16	Base material	CPCONLY	H01L2224/05299		2
H01L2224/053	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/053		12
H01L2224/05301	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05301		
H01L2224/05305	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05305		
H01L2224/05309	19	Indium [In] as principal constituent	CPCONLY	H01L2224/05309		
H01L2224/05311	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05311		1
H01L2224/05313	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05313		
H01L2224/05314	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05314		
H01L2224/05316	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05316		
H01L2224/05317	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05317		1
H01L2224/05318	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05318		2
H01L2224/0532	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0532		
H01L2224/05323	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05323		1
H01L2224/05324	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05324		4
H01L2224/05338	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05338		3
H01L2224/05339	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05339		11
H01L2224/05344	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/05344		4
H01L2224/05347	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05347		11
H01L2224/05349	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05349		
H01L2224/05355	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05355		4
H01L2224/05357	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05357		
H01L2224/0536	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0536		2
H01L2224/05363	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05363		
H01L2224/05364	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05364		1
H01L2224/05366	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05366		3
H01L2224/05369	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05369		2
H01L2224/0537	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0537		
H01L2224/05371	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05371		1
H01L2224/05372	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05372		
H01L2224/05373	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05373		
H01L2224/05376	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05376		
H01L2224/05378	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05378		1
H01L2224/05379	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05379		
H01L2224/0538	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0538		1
H01L2224/05381	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05381		
H01L2224/05383	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05383		
H01L2224/05384	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05384		2
H01L2224/05386	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05386		2
H01L2224/05387	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05387		
H01L2224/05388	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05388		
H01L2224/0539	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0539		4
H01L2224/05391	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05391		1
H01L2224/05393	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/053&#160;-&#160;H01L2224/05391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05393		3
H01L2224/05394	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/053&#160;-&#160;H01L2224/05391	CPCONLY	H01L2224/05394		
H01L2224/05395	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/053&#160;-&#160;H01L2224/05391	CPCONLY	H01L2224/05395		5
H01L2224/05398	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05398		
H01L2224/05399	16	Coating material	CPCONLY	H01L2224/05399		
H01L2224/054	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/054		
H01L2224/05401	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05401		
H01L2224/05405	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05405		
H01L2224/05409	19	Indium [In] as principal constituent	CPCONLY	H01L2224/05409		
H01L2224/05411	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05411		
H01L2224/05413	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05413		
H01L2224/05414	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05414		
H01L2224/05416	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05416		
H01L2224/05417	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05417		
H01L2224/05418	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05418		
H01L2224/0542	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0542		
H01L2224/05423	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05423		
H01L2224/05424	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05424		
H01L2224/05438	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05438		
H01L2224/05439	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05439		1
H01L2224/05444	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/05444		1
H01L2224/05447	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05447		2
H01L2224/05449	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05449		
H01L2224/05455	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05455		2
H01L2224/05457	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05457		
H01L2224/0546	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0546		1
H01L2224/05463	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05463		
H01L2224/05464	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05464		1
H01L2224/05466	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05466		
H01L2224/05469	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05469		
H01L2224/0547	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0547		
H01L2224/05471	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05471		1
H01L2224/05472	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05472		
H01L2224/05473	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05473		
H01L2224/05476	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05476		
H01L2224/05478	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05478		
H01L2224/05479	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05479		
H01L2224/0548	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0548		
H01L2224/05481	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05481		
H01L2224/05483	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05483		
H01L2224/05484	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05484		
H01L2224/05486	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05486		1
H01L2224/05487	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05487		
H01L2224/05488	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05488		
H01L2224/0549	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0549		1
H01L2224/05491	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05491		
H01L2224/05493	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/054&#160;-&#160;H01L2224/05491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05493		1
H01L2224/05494	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/054&#160;-&#160;H01L2224/05491	CPCONLY	H01L2224/05494		
H01L2224/05495	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/054&#160;-&#160;H01L2224/05491	CPCONLY	H01L2224/05495		
H01L2224/05498	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05498		
H01L2224/05499	16	Shape or distribution of the fillers	CPCONLY	H01L2224/05499		2
H01L2224/0554	12	External layer	CPCONLY	H01L2224/0554		1070
H01L2224/05541	13	Structure	CPCONLY	H01L2224/05541		407
H01L2224/05546	14	Dual damascene structure	CPCONLY	H01L2224/05546		228
H01L2224/05547	14	comprising a core and a coating	CPCONLY	H01L2224/05547		276
H01L2224/05548	14	Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/05548		2172
H01L2224/0555	13	Shape	CPCONLY	H01L2224/0555		1017
H01L2224/05551	14	comprising apertures or cavities	CPCONLY	H01L2224/05551		374
H01L2224/05552	14	in top view	CPCONLY	H01L2224/05552		3209
H01L2224/05553	15	being rectangular	CPCONLY	H01L2224/05553		3380
H01L2224/05554	15	being square	CPCONLY	H01L2224/05554		9786
H01L2224/05555	15	being circular or elliptic	CPCONLY	H01L2224/05555		559
H01L2224/05556	14	in side view	CPCONLY	H01L2224/05556		3323
H01L2224/05557	15	comprising protrusions or indentations	CPCONLY	H01L2224/05557		855
H01L2224/05558	15	conformal layer on a patterned surface	CPCONLY	H01L2224/05558		1175
H01L2224/05559	15	non conformal layer on a patterned surface	CPCONLY	H01L2224/05559		333
H01L2224/0556	13	Disposition	CPCONLY	H01L2224/0556		1123
H01L2224/05561	14	On the entire surface of the internal layer	CPCONLY	H01L2224/05561		54
H01L2224/05562	14	On the entire exposed surface of the internal layer	CPCONLY	H01L2224/05562		286
H01L2224/05563	14	Only on parts of the surface of the internal layer	CPCONLY	H01L2224/05563		85
H01L2224/05564	15	Only on the bonding interface of the bonding area	CPCONLY	H01L2224/05564		211
H01L2224/05565	15	Only outside the bonding interface of the bonding area	CPCONLY	H01L2224/05565		27
H01L2224/05566	15	Both on and outside the bonding interface of the bonding area	CPCONLY	H01L2224/05566		43
H01L2224/05567	14	the external layer being at least partially embedded in the surface	CPCONLY	H01L2224/05567		1580
H01L2224/05568	14	the whole external layer protruding from the surface	CPCONLY	H01L2224/05568		3368
H01L2224/05569	14	the external layer being disposed on a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/05569		1284
H01L2224/0557	14	the external layer being disposed on a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/0557		2085
H01L2224/05571	14	the external layer being disposed in a recess of the surface	CPCONLY	H01L2224/05571		2170
H01L2224/05572	15	the external layer extending out of an opening	CPCONLY	H01L2224/05572		2405
H01L2224/05573	13	Single external layer	CPCONLY	H01L2224/05573		4410
H01L2224/05575	13	Plural external layers	CPCONLY	H01L2224/05575		24
H01L2224/05576	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/05576		137
H01L2224/05578	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/05578		122
H01L2224/0558	14	being stacked	CPCONLY	H01L2224/0558		399
H01L2224/05582	15	Two-layer coating	CPCONLY	H01L2224/05582		314
H01L2224/05583	15	Three-layer coating	CPCONLY	H01L2224/05583		153
H01L2224/05584	15	Four-layer coating	CPCONLY	H01L2224/05584		32
H01L2224/05599	13	Material	CPCONLY	H01L2224/05599		13579
H01L2224/056	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/056		953
H01L2224/05601	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05601		24
H01L2224/05605	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05605		31
H01L2224/05609	16	Indium [In] as principal constituent	CPCONLY	H01L2224/05609		158
H01L2224/05611	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05611		865
H01L2224/05613	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05613		76
H01L2224/05614	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05614		3
H01L2224/05616	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05616		130
H01L2224/05617	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05617		37
H01L2224/05618	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05618		116
H01L2224/0562	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0562		24
H01L2224/05623	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05623		40
H01L2224/05624	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05624		6227
H01L2224/05638	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05638		149
H01L2224/05639	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05639		1740
H01L2224/05644	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/05644		4369
H01L2224/05647	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05647		5965
H01L2224/05649	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05649		56
H01L2224/05655	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05655		2782
H01L2224/05657	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05657		293
H01L2224/0566	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0566		82
H01L2224/05663	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05663		34
H01L2224/05664	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05664		972
H01L2224/05666	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05666		1536
H01L2224/05669	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05669		626
H01L2224/0567	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0567		32
H01L2224/05671	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05671		556
H01L2224/05672	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05672		76
H01L2224/05673	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05673		71
H01L2224/05676	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05676		116
H01L2224/05678	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05678		38
H01L2224/05679	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05679		30
H01L2224/0568	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0568		174
H01L2224/05681	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05681		362
H01L2224/05683	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05683		29
H01L2224/05684	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05684		1042
H01L2224/05686	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05686		442
H01L2224/05687	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05687		179
H01L2224/05688	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05688		25
H01L2224/0569	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0569		106
H01L2224/05691	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05691		14
H01L2224/05693	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/056&#160;-&#160;H01L2224/05691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05693		49
H01L2224/05694	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/056&#160;-&#160;H01L2224/05691	CPCONLY	H01L2224/05694		1
H01L2224/05695	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/056&#160;-&#160;H01L2224/05691	CPCONLY	H01L2224/05695		1
H01L2224/05698	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05698		
H01L2224/05699	15	Material of the matrix	CPCONLY	H01L2224/05699		7
H01L2224/057	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/057		
H01L2224/05701	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05701		1
H01L2224/05705	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05705		1
H01L2224/05709	18	Indium [In] as principal constituent	CPCONLY	H01L2224/05709		
H01L2224/05711	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05711		
H01L2224/05713	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05713		
H01L2224/05714	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05714		
H01L2224/05716	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05716		
H01L2224/05717	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05717		1
H01L2224/05718	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05718		
H01L2224/0572	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0572		1
H01L2224/05723	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05723		
H01L2224/05724	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05724		4
H01L2224/05738	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05738		1
H01L2224/05739	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05739		2
H01L2224/05744	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/05744		3
H01L2224/05747	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05747		12
H01L2224/05749	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05749		
H01L2224/05755	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05755		5
H01L2224/05757	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05757		1
H01L2224/0576	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0576		
H01L2224/05763	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05763		
H01L2224/05764	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05764		
H01L2224/05766	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05766		1
H01L2224/05769	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05769		
H01L2224/0577	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0577		
H01L2224/05771	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05771		
H01L2224/05772	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05772		
H01L2224/05773	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05773		
H01L2224/05776	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05776		
H01L2224/05778	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05778		
H01L2224/05779	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05779		
H01L2224/0578	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0578		2
H01L2224/05781	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05781		
H01L2224/05783	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05783		
H01L2224/05784	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05784		1
H01L2224/05786	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05786		1
H01L2224/05787	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05787		3
H01L2224/05788	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05788		1
H01L2224/0579	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0579		33
H01L2224/05791	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05791		4
H01L2224/05793	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/057&#160;-&#160;H01L2224/05791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05793		2
H01L2224/05794	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/057&#160;-&#160;H01L2224/05791	CPCONLY	H01L2224/05794		26
H01L2224/05795	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/057&#160;-&#160;H01L2224/05791	CPCONLY	H01L2224/05795		
H01L2224/05798	15	Fillers	CPCONLY	H01L2224/05798		1
H01L2224/05799	16	Base material	CPCONLY	H01L2224/05799		4
H01L2224/058	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/058		30
H01L2224/05801	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05801		
H01L2224/05805	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05805		1
H01L2224/05809	19	Indium [In] as principal constituent	CPCONLY	H01L2224/05809		3
H01L2224/05811	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05811		7
H01L2224/05813	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05813		2
H01L2224/05814	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05814		
H01L2224/05816	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05816		2
H01L2224/05817	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05817		3
H01L2224/05818	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05818		
H01L2224/0582	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0582		2
H01L2224/05823	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05823		
H01L2224/05824	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05824		4
H01L2224/05838	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05838		
H01L2224/05839	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05839		34
H01L2224/05844	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/05844		17
H01L2224/05847	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05847		31
H01L2224/05849	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05849		1
H01L2224/05855	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05855		14
H01L2224/05857	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05857		2
H01L2224/0586	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0586		1
H01L2224/05863	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05863		
H01L2224/05864	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05864		4
H01L2224/05866	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05866		2
H01L2224/05869	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05869		1
H01L2224/0587	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0587		
H01L2224/05871	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05871		1
H01L2224/05872	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05872		1
H01L2224/05873	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05873		
H01L2224/05876	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05876		
H01L2224/05878	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05878		
H01L2224/05879	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05879		
H01L2224/0588	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0588		3
H01L2224/05881	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05881		
H01L2224/05883	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05883		
H01L2224/05884	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05884		3
H01L2224/05886	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05886		4
H01L2224/05887	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05887		6
H01L2224/05888	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05888		1
H01L2224/0589	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0589		5
H01L2224/05891	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05891		
H01L2224/05893	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/058&#160;-&#160;H01L2224/05891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05893		16
H01L2224/05894	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/058&#160;-&#160;H01L2224/05891	CPCONLY	H01L2224/05894		
H01L2224/05895	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/058&#160;-&#160;H01L2224/05891	CPCONLY	H01L2224/05895		3
H01L2224/05898	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05898		
H01L2224/05899	16	Coating material	CPCONLY	H01L2224/05899		
H01L2224/059	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/059		
H01L2224/05901	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/05901		
H01L2224/05905	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/05905		
H01L2224/05909	19	Indium [In] as principal constituent	CPCONLY	H01L2224/05909		1
H01L2224/05911	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/05911		1
H01L2224/05913	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/05913		
H01L2224/05914	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/05914		
H01L2224/05916	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/05916		1
H01L2224/05917	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/05917		1
H01L2224/05918	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/05918		
H01L2224/0592	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/0592		
H01L2224/05923	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/05923		
H01L2224/05924	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/05924		1
H01L2224/05938	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/05938		1
H01L2224/05939	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/05939		3
H01L2224/05944	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/05944		4
H01L2224/05947	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/05947		2
H01L2224/05949	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/05949		
H01L2224/05955	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/05955		2
H01L2224/05957	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/05957		
H01L2224/0596	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/0596		
H01L2224/05963	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/05963		
H01L2224/05964	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/05964		
H01L2224/05966	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/05966		2
H01L2224/05969	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/05969		1
H01L2224/0597	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/0597		
H01L2224/05971	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/05971		
H01L2224/05972	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/05972		
H01L2224/05973	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/05973		
H01L2224/05976	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/05976		
H01L2224/05978	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/05978		
H01L2224/05979	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/05979		1
H01L2224/0598	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/0598		1
H01L2224/05981	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/05981		1
H01L2224/05983	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/05983		
H01L2224/05984	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/05984		
H01L2224/05986	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/05986		1
H01L2224/05987	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/05987		
H01L2224/05988	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/05988		
H01L2224/0599	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/0599		4
H01L2224/05991	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/05991		
H01L2224/05993	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/059&#160;-&#160;H01L2224/05991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/05993		
H01L2224/05994	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/059&#160;-&#160;H01L2224/05991	CPCONLY	H01L2224/05994		
H01L2224/05995	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/059&#160;-&#160;H01L2224/05991	CPCONLY	H01L2224/05995		
H01L2224/05998	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/05998		
H01L2224/05999	16	Shape or distribution of the fillers	CPCONLY	H01L2224/05999		3
H01L2224/06	11	of a plurality of bonding areas	CPCONLY	H01L2224/06		131
H01L2224/0601	12	Structure	CPCONLY	H01L2224/0601		34
H01L2224/0603	13	Bonding areas having different sizes, e.g. different heights or widths	CPCONLY	H01L2224/0603		6454
H01L2224/0605	12	Shape	CPCONLY	H01L2224/0605		20
H01L2224/06051	13	Bonding areas having different shapes	CPCONLY	H01L2224/06051		590
H01L2224/061	12	Disposition	CPCONLY	H01L2224/061		104
H01L2224/06102	13	the bonding areas being at different heights	CPCONLY	H01L2224/06102		476
H01L2224/0612	13	Layout	CPCONLY	H01L2224/0612		236
H01L2224/0613	14	Square or rectangular array	CPCONLY	H01L2224/0613		53
H01L2224/06131	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/06131		577
H01L2224/06132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/06132		97
H01L2224/06133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/06133		152
H01L2224/06134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/06134		63
H01L2224/06135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/06135		902
H01L2224/06136	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/06136		774
H01L2224/06137	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06137		27
H01L2224/06138	16	being disposed in a single wiring level, i.e. planar layout	CPCONLY	H01L2224/06138		38
H01L2224/06139	16	being disposed in different wiring levels, i.e. resurf layout	CPCONLY	H01L2224/06139		13
H01L2224/0614	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/0614		15
H01L2224/06141	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/06141		13
H01L2224/06142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/06142		9
H01L2224/06143	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/06143		4
H01L2224/06144	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/06144		2
H01L2224/06145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/06145		22
H01L2224/06146	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/06146		2
H01L2224/06147	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06147		4
H01L2224/06148	16	being disposed in a single wiring level, i.e. planar layout	CPCONLY	H01L2224/06148		
H01L2224/06149	16	being disposed in different wiring levels, i.e. resurf layout	CPCONLY	H01L2224/06149		2
H01L2224/0615	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/0615		409
H01L2224/06151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/06151		64
H01L2224/06152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/06152		56
H01L2224/06153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/06153		249
H01L2224/06154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/06154		33
H01L2224/06155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/06155		298
H01L2224/06156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/06156		73
H01L2224/06157	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06157		4
H01L2224/06158	16	being disposed in a single wiring level, i.e. planar layout	CPCONLY	H01L2224/06158		6
H01L2224/06159	16	being disposed in different wiring levels, i.e. resurf layout	CPCONLY	H01L2224/06159		8
H01L2224/0616	14	Random array, i.e. array with no symmetry	CPCONLY	H01L2224/0616		149
H01L2224/06163	15	with a staggered arrangement	CPCONLY	H01L2224/06163		16
H01L2224/06164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/06164		28
H01L2224/06165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/06165		60
H01L2224/06166	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/06166		3
H01L2224/06167	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06167		10
H01L2224/06168	16	being disposed in a single wiring level, i.e. planar layout	CPCONLY	H01L2224/06168		6
H01L2224/06169	16	being disposed in different wiring levels, i.e. resurf layout	CPCONLY	H01L2224/06169		5
H01L2224/06177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/06177		102
H01L2224/06179	14	Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/06179		151
H01L2224/0618	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/0618		6
H01L2224/06181	14	On opposite sides of the body	CPCONLY	H01L2224/06181		2767
H01L2224/06182	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06182		90
H01L2224/06183	14	On contiguous sides of the body	CPCONLY	H01L2224/06183		53
H01L2224/06187	15	with specially adapted redistribution layers [RDL]	CPCONLY	H01L2224/06187		22
H01L2224/06188	16	being disposed in a single wiring level, i.e. planar layout	CPCONLY	H01L2224/06188		10
H01L2224/06189	16	being disposed in different wiring levels, i.e. resurf layout	CPCONLY	H01L2224/06189		2
H01L2224/065	12	Material	CPCONLY	H01L2224/065		22
H01L2224/06505	13	Bonding areas having different materials	CPCONLY	H01L2224/06505		111
H01L2224/0651	12	Function	CPCONLY	H01L2224/0651		5
H01L2224/06515	13	Bonding areas having different functions	CPCONLY	H01L2224/06515		214
H01L2224/06517	14	including bonding areas providing primarily mechanical bonding	CPCONLY	H01L2224/06517		135
H01L2224/06519	14	including bonding areas providing primarily thermal dissipation	CPCONLY	H01L2224/06519		59
H01L2224/07	10	Structure, shape, material or disposition of the bonding areas after the connecting process	CPCONLY	H01L2224/07		11
H01L2224/08	11	of an individual bonding area	CPCONLY	H01L2224/08		555
H01L2224/0801	12	Structure	CPCONLY	H01L2224/0801		110
H01L2224/0805	12	Shape	CPCONLY	H01L2224/0805		13
H01L2224/08052	13	in top view	CPCONLY	H01L2224/08052		19
H01L2224/08053	14	being non uniform along the bonding area	CPCONLY	H01L2224/08053		8
H01L2224/08054	14	being rectangular	CPCONLY	H01L2224/08054		13
H01L2224/08055	14	being square	CPCONLY	H01L2224/08055		23
H01L2224/08056	14	being circular or elliptic	CPCONLY	H01L2224/08056		24
H01L2224/08057	13	in side view	CPCONLY	H01L2224/08057		79
H01L2224/08058	14	being non uniform along the bonding area	CPCONLY	H01L2224/08058		200
H01L2224/08059	14	comprising protrusions or indentations	CPCONLY	H01L2224/08059		75
H01L2224/0807	13	of bonding interfaces, e.g. interlocking features	CPCONLY	H01L2224/0807		142
H01L2224/081	12	Disposition	CPCONLY	H01L2224/081		22
H01L2224/08111	13	the bonding area being disposed in a recess of the surface of the body	CPCONLY	H01L2224/08111		44
H01L2224/08112	13	the bonding area being at least partially embedded in the surface of the body	CPCONLY	H01L2224/08112		51
H01L2224/08113	13	the whole bonding area protruding from the surface of the body	CPCONLY	H01L2224/08113		52
H01L2224/0812	13	the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding	CPCONLY	H01L2224/0812		45
H01L2224/08121	14	the connected bonding areas being not aligned with respect to each other	CPCONLY	H01L2224/08121		264
H01L2224/08123	14	the bonding area connecting directly to at least two bonding areas	CPCONLY	H01L2224/08123		120
H01L2224/08135	14	the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/08135		23
H01L2224/08137	15	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/08137		77
H01L2224/08145	15	the bodies being stacked	CPCONLY	H01L2224/08145		3276
H01L2224/08146	16	the bonding area connecting to a via connection in the body	CPCONLY	H01L2224/08146		683
H01L2224/08147	16	the bonding area connecting to a bonding area disposed in a recess of the surface of the body	CPCONLY	H01L2224/08147		244
H01L2224/08148	16	the bonding area connecting to a bonding area protruding from the surface of the body	CPCONLY	H01L2224/08148		139
H01L2224/08151	14	the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/08151		13
H01L2224/08153	15	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/08153		2
H01L2224/08155	16	the item being non-metallic, e.g. being an insulating substrate with or without metallisation	CPCONLY	H01L2224/08155		45
H01L2224/0816	17	the bonding area connecting to a pin of the item	CPCONLY	H01L2224/0816		
H01L2224/08163	17	the bonding area connecting to a potential ring of the item	CPCONLY	H01L2224/08163		
H01L2224/08165	17	the bonding area connecting to a via metallisation of the item	CPCONLY	H01L2224/08165		24
H01L2224/08167	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08167		3
H01L2224/08168	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08168		7
H01L2224/08175	16	the item being metallic	CPCONLY	H01L2224/08175		3
H01L2224/08183	17	the bonding area connecting to a potential ring of the item	CPCONLY	H01L2224/08183		
H01L2224/08187	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08187		
H01L2224/08188	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08188		2
H01L2224/08195	16	the item being a discrete passive component	CPCONLY	H01L2224/08195		5
H01L2224/08197	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08197		
H01L2224/08198	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08198		1
H01L2224/08221	15	the body and the item being stacked	CPCONLY	H01L2224/08221		49
H01L2224/08225	16	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/08225		904
H01L2224/0823	17	the bonding area connecting to a pin of the item	CPCONLY	H01L2224/0823		7
H01L2224/08233	17	the bonding area connecting to a potential ring of the item	CPCONLY	H01L2224/08233		1
H01L2224/08235	17	the bonding area connecting to a via metallisation of the item	CPCONLY	H01L2224/08235		241
H01L2224/08237	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08237		96
H01L2224/08238	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08238		101
H01L2224/08245	16	the item being metallic	CPCONLY	H01L2224/08245		116
H01L2224/08253	17	the bonding area connecting to a potential ring of the item	CPCONLY	H01L2224/08253		1
H01L2224/08257	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08257		3
H01L2224/08258	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08258		15
H01L2224/08265	16	the item being a discrete passive component	CPCONLY	H01L2224/08265		79
H01L2224/08267	17	the bonding area connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/08267		9
H01L2224/08268	17	the bonding area connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/08268		5
H01L2224/085	12	Material	CPCONLY	H01L2224/085		31
H01L2224/08501	13	at the bonding interface	CPCONLY	H01L2224/08501		84
H01L2224/08502	14	comprising an eutectic alloy	CPCONLY	H01L2224/08502		20
H01L2224/08503	14	comprising an intermetallic compound	CPCONLY	H01L2224/08503		30
H01L2224/08505	13	outside the bonding interface	CPCONLY	H01L2224/08505		6
H01L2224/08506	14	comprising an eutectic alloy	CPCONLY	H01L2224/08506		
H01L2224/09	11	of a plurality of bonding areas	CPCONLY	H01L2224/09		7
H01L2224/0901	12	Structure	CPCONLY	H01L2224/0901		19
H01L2224/0903	13	Bonding areas having different sizes, e.g. different diameters, heights or widths	CPCONLY	H01L2224/0903		115
H01L2224/0905	12	Shape	CPCONLY	H01L2224/0905		18
H01L2224/09051	13	Bonding areas having different shapes	CPCONLY	H01L2224/09051		34
H01L2224/09055	14	of their bonding interfaces	CPCONLY	H01L2224/09055		20
H01L2224/091	12	Disposition	CPCONLY	H01L2224/091		89
H01L2224/09102	13	the bonding areas being at different heights	CPCONLY	H01L2224/09102		6
H01L2224/09103	14	on the semiconductor or solid-state body	CPCONLY	H01L2224/09103		17
H01L2224/09104	14	outside the semiconductor or solid-state body	CPCONLY	H01L2224/09104		4
H01L2224/0912	13	Layout	CPCONLY	H01L2224/0912		63
H01L2224/0913	14	Square or rectangular array	CPCONLY	H01L2224/0913		39
H01L2224/09132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/09132		17
H01L2224/09133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/09133		14
H01L2224/09134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/09134		4
H01L2224/09135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/09135		7
H01L2224/0914	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/0914		3
H01L2224/09142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/09142		
H01L2224/09143	15	with a staggered arrangement	CPCONLY	H01L2224/09143		1
H01L2224/09144	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/09144		
H01L2224/09145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/09145		1
H01L2224/0915	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/0915		7
H01L2224/09151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/09151		7
H01L2224/09152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/09152		5
H01L2224/09153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/09153		6
H01L2224/09154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/09154		1
H01L2224/09155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/09155		8
H01L2224/09156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/09156		
H01L2224/0916	14	Random array, i.e. array with no symmetry	CPCONLY	H01L2224/0916		4
H01L2224/09163	15	with a staggered arrangement	CPCONLY	H01L2224/09163		
H01L2224/09164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/09164		1
H01L2224/09165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/09165		5
H01L2224/09177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/09177		13
H01L2224/09179	14	Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/09179		15
H01L2224/0918	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/0918		1
H01L2224/09181	14	On opposite sides of the body	CPCONLY	H01L2224/09181		356
H01L2224/09183	14	On contiguous sides of the body	CPCONLY	H01L2224/09183		16
H01L2224/095	12	Material	CPCONLY	H01L2224/095		7
H01L2224/09505	13	Bonding areas having different materials	CPCONLY	H01L2224/09505		15
H01L2224/0951	12	Function	CPCONLY	H01L2224/0951		7
H01L2224/09515	13	Bonding areas having different functions	CPCONLY	H01L2224/09515		66
H01L2224/09517	14	including bonding areas providing primarily mechanical support	CPCONLY	H01L2224/09517		177
H01L2224/09519	14	including bonding areas providing primarily thermal dissipation	CPCONLY	H01L2224/09519		32
H01L2224/10	9	Bump connectors; Manufacturing methods related thereto	CPCONLY	H01L2224/10		500
H01L2224/1012	10	Auxiliary members for bump connectors, e.g. spacers	CPCONLY	H01L2224/1012		37
H01L2224/10122	11	being formed on the semiconductor or solid-state body to be connected	CPCONLY	H01L2224/10122		46
H01L2224/10125	12	Reinforcing structures	CPCONLY	H01L2224/10125		71
H01L2224/10126	13	Bump collar	CPCONLY	H01L2224/10126		654
H01L2224/10135	12	Alignment aids	CPCONLY	H01L2224/10135		198
H01L2224/10145	12	Flow barriers	CPCONLY	H01L2224/10145		197
H01L2224/10152	11	being formed on an item to be connected not being a semiconductor or solid-state body	CPCONLY	H01L2224/10152		22
H01L2224/10155	12	Reinforcing structures	CPCONLY	H01L2224/10155		28
H01L2224/10156	13	Bump collar	CPCONLY	H01L2224/10156		34
H01L2224/10165	12	Alignment aids	CPCONLY	H01L2224/10165		239
H01L2224/10175	12	Flow barriers	CPCONLY	H01L2224/10175		255
H01L2224/11	10	Manufacturing methods	CPCONLY	H01L2224/11		8334
H01L2224/11001	11	Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/11001		130
H01L2224/11002	12	for supporting the semiconductor or solid-state body	CPCONLY	H01L2224/11002		289
H01L2224/11003	12	for holding or transferring the bump preform	CPCONLY	H01L2224/11003		612
H01L2224/11005	12	for aligning the bump connector, e.g. marks, spacers	CPCONLY	H01L2224/11005		248
H01L2224/11009	12	for protecting parts during manufacture	CPCONLY	H01L2224/11009		107
H01L2224/11011	11	Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature	CPCONLY	H01L2224/11011		47
H01L2224/11013	12	for holding or confining the bump connector, e.g. solder flow barrier	CPCONLY	H01L2224/11013		128
H01L2224/11015	12	for aligning the bump connector, e.g. marks, spacers	CPCONLY	H01L2224/11015		39
H01L2224/11019	12	for protecting parts during the process	CPCONLY	H01L2224/11019		60
H01L2224/111	11	Manufacture and pre-treatment of the bump connector preform	CPCONLY	H01L2224/111		345
H01L2224/1111	12	Shaping	CPCONLY	H01L2224/1111		110
H01L2224/1112	12	Applying permanent coating	CPCONLY	H01L2224/1112		50
H01L2224/113	11	by local deposition of the material of the bump connector	CPCONLY	H01L2224/113		62
H01L2224/1131	12	in liquid form	CPCONLY	H01L2224/1131		163
H01L2224/11312	13	Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion	CPCONLY	H01L2224/11312		104
H01L2224/11318	13	by dispensing droplets	CPCONLY	H01L2224/11318		81
H01L2224/1132	13	Screen printing, i.e. using a stencil	CPCONLY	H01L2224/1132		758
H01L2224/1133	12	in solid form	CPCONLY	H01L2224/1133		55
H01L2224/11332	13	using a powder	CPCONLY	H01L2224/11332		151
H01L2224/11334	13	using preformed bumps	CPCONLY	H01L2224/11334		1402
H01L2224/1134	13	Stud bumping, i.e. using a wire-bonding apparatus	CPCONLY	H01L2224/1134		1897
H01L2224/114	11	by blanket deposition of the material of the bump connector	CPCONLY	H01L2224/114		214
H01L2224/1141	12	in liquid form	CPCONLY	H01L2224/1141		43
H01L2224/11416	13	Spin coating	CPCONLY	H01L2224/11416		14
H01L2224/11418	13	Spray coating	CPCONLY	H01L2224/11418		14
H01L2224/1142	13	Curtain coating	CPCONLY	H01L2224/1142		1
H01L2224/11422	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/11422		33
H01L2224/11424	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/11424		44
H01L2224/11426	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/11426		2
H01L2224/11428	13	Wave coating	CPCONLY	H01L2224/11428		6
H01L2224/1143	12	in solid form	CPCONLY	H01L2224/1143		7
H01L2224/11436	13	Lamination of a preform, e.g. foil, sheet or layer	CPCONLY	H01L2224/11436		40
H01L2224/11438	14	the preform being at least partly pre-patterned	CPCONLY	H01L2224/11438		6
H01L2224/1144	14	by transfer printing	CPCONLY	H01L2224/1144		54
H01L2224/11442	13	using a powder	CPCONLY	H01L2224/11442		29
H01L2224/11444	12	in gaseous form	CPCONLY	H01L2224/11444		18
H01L2224/1145	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/1145		510
H01L2224/11452	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/11452		158
H01L2224/1146	12	Plating	CPCONLY	H01L2224/1146		720
H01L2224/11462	13	Electroplating	CPCONLY	H01L2224/11462		1384
H01L2224/11464	13	Electroless plating	CPCONLY	H01L2224/11464		415
H01L2224/11466	12	Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface	CPCONLY	H01L2224/11466		15
H01L2224/1147	11	using a lift-off mask	CPCONLY	H01L2224/1147		2075
H01L2224/11472	12	Profile of the lift-off mask	CPCONLY	H01L2224/11472		306
H01L2224/11474	12	Multilayer masks	CPCONLY	H01L2224/11474		203
H01L2224/1148	12	Permanent masks, i.e. masks left in the finished device, e.g. passivation layers	CPCONLY	H01L2224/1148		288
H01L2224/115	11	by chemical or physical modification of a pre-existing or pre-deposited material	CPCONLY	H01L2224/115		32
H01L2224/11502	12	Pre-existing or pre-deposited material	CPCONLY	H01L2224/11502		54
H01L2224/11505	12	Sintering	CPCONLY	H01L2224/11505		95
H01L2224/1151	12	Anodisation	CPCONLY	H01L2224/1151		3
H01L2224/11515	12	Curing and solidification, e.g. of a photosensitive bump material	CPCONLY	H01L2224/11515		32
H01L2224/1152	12	Self-assembly, e.g. self-agglomeration of the bump material in a fluid	CPCONLY	H01L2224/1152		42
H01L2224/11522	13	Auxiliary means therefor, e.g. for self-assembly activation	CPCONLY	H01L2224/11522		14
H01L2224/11524	13	with special adaptation of the surface or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process	CPCONLY	H01L2224/11524		7
H01L2224/11526	13	involving the material of the bonding area, e.g. bonding pad or under bump metallisation [UBM]	CPCONLY	H01L2224/11526		20
H01L2224/1155	12	Selective modification	CPCONLY	H01L2224/1155		11
H01L2224/11552	13	using a laser or a focussed ion beam [FIB]	CPCONLY	H01L2224/11552		33
H01L2224/11554	14	Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin	CPCONLY	H01L2224/11554		20
H01L2224/116	11	by patterning a pre-deposited material	CPCONLY	H01L2224/116		191
H01L2224/11602	12	Mechanical treatment, e.g. polishing, grinding	CPCONLY	H01L2224/11602		37
H01L2224/1161	12	Physical or chemical etching	CPCONLY	H01L2224/1161		96
H01L2224/11612	13	by physical means only	CPCONLY	H01L2224/11612		14
H01L2224/11614	13	by chemical means only	CPCONLY	H01L2224/11614		72
H01L2224/11616	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/11616		42
H01L2224/11618	12	with selective exposure, development and removal of a photosensitive bump material, e.g. of a photosensitive conductive resin	CPCONLY	H01L2224/11618		50
H01L2224/1162	12	using masks	CPCONLY	H01L2224/1162		63
H01L2224/11622	13	Photolithography	CPCONLY	H01L2224/11622		183
H01L2224/1163	12	using a laser or a focused ion beam [FIB]	CPCONLY	H01L2224/1163		12
H01L2224/11632	13	Ablation by means of a laser or focused ion beam [FIB]	CPCONLY	H01L2224/11632		10
H01L2224/117	11	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/117		60
H01L2224/118	11	Post-treatment of the bump connector	CPCONLY	H01L2224/118		40
H01L2224/1181	12	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/1181		177
H01L2224/1182	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/1182		170
H01L2224/11821	13	Spray coating	CPCONLY	H01L2224/11821		14
H01L2224/11822	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/11822		254
H01L2224/11823	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/11823		36
H01L2224/11824	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/11824		5
H01L2224/11825	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/11825		114
H01L2224/11826	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/11826		39
H01L2224/11827	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/11827		25
H01L2224/1183	12	Reworking, e.g. shaping	CPCONLY	H01L2224/1183		60
H01L2224/11831	13	involving a chemical process, e.g. etching the bump connector	CPCONLY	H01L2224/11831		119
H01L2224/1184	13	involving a mechanical process, e.g. planarising the bump connector	CPCONLY	H01L2224/1184		303
H01L2224/11845	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/11845		54
H01L2224/11848	12	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/11848		134
H01L2224/11849	13	Reflowing	CPCONLY	H01L2224/11849		1446
H01L2224/119	11	Methods of manufacturing bump connectors involving a specific sequence of method steps	CPCONLY	H01L2224/119		292
H01L2224/11901	12	with repetition of the same manufacturing step	CPCONLY	H01L2224/11901		337
H01L2224/11902	13	Multiple masking steps	CPCONLY	H01L2224/11902		115
H01L2224/11903	14	using different masks	CPCONLY	H01L2224/11903		145
H01L2224/11906	14	with modification of the same mask	CPCONLY	H01L2224/11906		64
H01L2224/1191	12	Forming a passivation layer after forming the bump connector	CPCONLY	H01L2224/1191		198
H01L2224/11912	12	the bump being used as a mask for patterning other parts	CPCONLY	H01L2224/11912		127
H01L2224/11914	12	the under bump metallisation [UBM] being used as a mask for patterning other parts	CPCONLY	H01L2224/11914		8
H01L2224/11916	12	a passivation layer being used as a mask for patterning other parts	CPCONLY	H01L2224/11916		13
H01L2224/12	10	Structure, shape, material or disposition of the bump connectors prior to the connecting process	CPCONLY	H01L2224/12		133
H01L2224/12105	11	Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages	CPCONLY	H01L2224/12105		5708
H01L2224/13	11	of an individual bump connector	CPCONLY	H01L2224/13		3275
H01L2224/13001	12	Core members of the bump connector	CPCONLY	H01L2224/13001		11
H01L2224/13005	13	Structure	CPCONLY	H01L2224/13005		418
H01L2224/13006	14	Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]	CPCONLY	H01L2224/13006		517
H01L2224/13007	14	Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]	CPCONLY	H01L2224/13007		535
H01L2224/13008	14	Bump connector integrally formed with a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/13008		372
H01L2224/13009	14	Bump connector integrally formed with a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/13009		485
H01L2224/1301	13	Shape	CPCONLY	H01L2224/1301		77
H01L2224/13011	14	comprising apertures or cavities, e.g. hollow bump	CPCONLY	H01L2224/13011		224
H01L2224/13012	14	in top view	CPCONLY	H01L2224/13012		325
H01L2224/13013	15	being rectangular or square	CPCONLY	H01L2224/13013		371
H01L2224/13014	15	being circular or elliptic	CPCONLY	H01L2224/13014		685
H01L2224/13015	15	comprising protrusions or indentations	CPCONLY	H01L2224/13015		123
H01L2224/13016	14	in side view	CPCONLY	H01L2224/13016		568
H01L2224/13017	15	being non uniform along the bump connector	CPCONLY	H01L2224/13017		696
H01L2224/13018	15	comprising protrusions or indentations	CPCONLY	H01L2224/13018		431
H01L2224/13019	16	at the bonding interface of the bump connector, i.e. on the surface of the bump connector	CPCONLY	H01L2224/13019		496
H01L2224/1302	13	Disposition	CPCONLY	H01L2224/1302		110
H01L2224/13021	14	the bump connector being disposed in a recess of the surface	CPCONLY	H01L2224/13021		512
H01L2224/13022	14	the bump connector being at least partially embedded in the surface	CPCONLY	H01L2224/13022		1971
H01L2224/13023	14	the whole bump connector protruding from the surface	CPCONLY	H01L2224/13023		1103
H01L2224/13024	14	the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/13024		1366
H01L2224/13025	14	the bump connector being disposed on a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/13025		1928
H01L2224/13026	14	relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body	CPCONLY	H01L2224/13026		283
H01L2224/13027	15	the bump connector being offset with respect to the bonding area, e.g. bond pad	CPCONLY	H01L2224/13027		191
H01L2224/13028	15	the bump connector being disposed on at least two separate bonding areas, e.g. bond pads	CPCONLY	H01L2224/13028		96
H01L2224/13075	13	Plural core members	CPCONLY	H01L2224/13075		10
H01L2224/13076	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/13076		272
H01L2224/13078	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/13078		144
H01L2224/1308	14	being stacked	CPCONLY	H01L2224/1308		612
H01L2224/13082	15	Two-layer arrangements	CPCONLY	H01L2224/13082		1982
H01L2224/13083	15	Three-layer arrangements	CPCONLY	H01L2224/13083		646
H01L2224/13084	15	Four-layer arrangements	CPCONLY	H01L2224/13084		159
H01L2224/13099	13	Material	CPCONLY	H01L2224/13099		7289
H01L2224/131	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/131		6870
H01L2224/13101	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13101		960
H01L2224/13105	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13105		66
H01L2224/13109	16	Indium [In] as principal constituent	CPCONLY	H01L2224/13109		855
H01L2224/13111	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13111		4103
H01L2224/13113	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13113		652
H01L2224/13114	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13114		3
H01L2224/13116	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13116		1104
H01L2224/13117	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13117		43
H01L2224/13118	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13118		284
H01L2224/1312	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1312		181
H01L2224/13123	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13123		43
H01L2224/13124	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13124		1118
H01L2224/13138	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13138		49
H01L2224/13139	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13139		1983
H01L2224/13144	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/13144		4024
H01L2224/13147	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13147		5418
H01L2224/13149	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13149		37
H01L2224/13155	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13155		1996
H01L2224/13157	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13157		157
H01L2224/1316	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1316		94
H01L2224/13163	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13163		17
H01L2224/13164	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13164		609
H01L2224/13166	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13166		347
H01L2224/13169	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13169		301
H01L2224/1317	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1317		19
H01L2224/13171	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13171		140
H01L2224/13172	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13172		26
H01L2224/13173	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13173		28
H01L2224/13176	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13176		42
H01L2224/13178	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13178		31
H01L2224/13179	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13179		32
H01L2224/1318	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1318		78
H01L2224/13181	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13181		90
H01L2224/13183	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13183		20
H01L2224/13184	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13184		315
H01L2224/13186	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13186		68
H01L2224/13187	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13187		25
H01L2224/13188	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13188		7
H01L2224/1319	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1319		419
H01L2224/13191	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13191		26
H01L2224/13193	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/131&#160;-&#160;H01L2224/13191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13193		55
H01L2224/13194	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/131&#160;-&#160;H01L2224/13191	CPCONLY	H01L2224/13194		11
H01L2224/13195	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/131&#160;-&#160;H01L2224/13191	CPCONLY	H01L2224/13195		3
H01L2224/13198	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13198		4
H01L2224/13199	15	Material of the matrix	CPCONLY	H01L2224/13199		39
H01L2224/132	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/132		13
H01L2224/13201	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13201		2
H01L2224/13205	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13205		2
H01L2224/13209	18	Indium [In] as principal constituent	CPCONLY	H01L2224/13209		9
H01L2224/13211	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13211		30
H01L2224/13213	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13213		9
H01L2224/13214	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13214		
H01L2224/13216	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13216		5
H01L2224/13217	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13217		
H01L2224/13218	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13218		4
H01L2224/1322	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1322		1
H01L2224/13223	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13223		
H01L2224/13224	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13224		5
H01L2224/13238	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13238		
H01L2224/13239	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13239		29
H01L2224/13244	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/13244		20
H01L2224/13247	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13247		28
H01L2224/13249	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13249		1
H01L2224/13255	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13255		5
H01L2224/13257	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13257		
H01L2224/1326	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1326		1
H01L2224/13263	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13263		1
H01L2224/13264	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13264		1
H01L2224/13266	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13266		
H01L2224/13269	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13269		3
H01L2224/1327	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1327		
H01L2224/13271	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13271		
H01L2224/13272	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13272		
H01L2224/13273	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13273		
H01L2224/13276	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13276		
H01L2224/13278	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13278		
H01L2224/13279	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13279		
H01L2224/1328	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1328		
H01L2224/13281	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13281		
H01L2224/13283	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13283		
H01L2224/13284	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13284		4
H01L2224/13286	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13286		2
H01L2224/13287	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13287		1
H01L2224/13288	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13288		
H01L2224/1329	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1329		355
H01L2224/13291	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13291		14
H01L2224/13293	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/132&#160;-&#160;H01L2224/13291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13293		2
H01L2224/13294	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/132&#160;-&#160;H01L2224/13291	CPCONLY	H01L2224/13294		195
H01L2224/13295	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/132&#160;-&#160;H01L2224/13291	CPCONLY	H01L2224/13295		2
H01L2224/13298	15	Fillers	CPCONLY	H01L2224/13298		18
H01L2224/13299	16	Base material	CPCONLY	H01L2224/13299		9
H01L2224/133	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/133		373
H01L2224/13301	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13301		3
H01L2224/13305	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13305		3
H01L2224/13309	19	Indium [In] as principal constituent	CPCONLY	H01L2224/13309		30
H01L2224/13311	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13311		87
H01L2224/13313	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13313		33
H01L2224/13314	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13314		
H01L2224/13316	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13316		29
H01L2224/13317	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13317		7
H01L2224/13318	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13318		19
H01L2224/1332	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1332		13
H01L2224/13323	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13323		3
H01L2224/13324	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13324		27
H01L2224/13338	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13338		4
H01L2224/13339	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13339		193
H01L2224/13344	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/13344		96
H01L2224/13347	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13347		151
H01L2224/13349	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13349		7
H01L2224/13355	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13355		86
H01L2224/13357	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13357		14
H01L2224/1336	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1336		16
H01L2224/13363	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13363		3
H01L2224/13364	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13364		33
H01L2224/13366	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13366		7
H01L2224/13369	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13369		30
H01L2224/1337	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1337		2
H01L2224/13371	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13371		7
H01L2224/13372	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13372		1
H01L2224/13373	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13373		2
H01L2224/13376	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13376		1
H01L2224/13378	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13378		1
H01L2224/13379	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13379		2
H01L2224/1338	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1338		4
H01L2224/13381	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13381		2
H01L2224/13383	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13383		1
H01L2224/13384	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13384		10
H01L2224/13386	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13386		18
H01L2224/13387	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13387		12
H01L2224/13388	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13388		2
H01L2224/1339	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1339		35
H01L2224/13391	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13391		3
H01L2224/13393	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/133&#160;-&#160;H01L2224/13391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13393		16
H01L2224/13394	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/133&#160;-&#160;H01L2224/13391	CPCONLY	H01L2224/13394		2
H01L2224/13395	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/133&#160;-&#160;H01L2224/13391	CPCONLY	H01L2224/13395		13
H01L2224/13398	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13398		1
H01L2224/13399	16	Coating material	CPCONLY	H01L2224/13399		3
H01L2224/134	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/134		13
H01L2224/13401	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13401		2
H01L2224/13405	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13405		2
H01L2224/13409	19	Indium [In] as principal constituent	CPCONLY	H01L2224/13409		6
H01L2224/13411	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13411		20
H01L2224/13413	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13413		1
H01L2224/13414	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13414		
H01L2224/13416	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13416		2
H01L2224/13417	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13417		1
H01L2224/13418	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13418		1
H01L2224/1342	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1342		
H01L2224/13423	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13423		
H01L2224/13424	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13424		
H01L2224/13438	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13438		1
H01L2224/13439	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13439		28
H01L2224/13444	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/13444		23
H01L2224/13447	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13447		14
H01L2224/13449	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13449		
H01L2224/13455	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13455		28
H01L2224/13457	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13457		4
H01L2224/1346	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1346		1
H01L2224/13463	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13463		
H01L2224/13464	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13464		7
H01L2224/13466	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13466		3
H01L2224/13469	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13469		4
H01L2224/1347	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1347		
H01L2224/13471	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13471		
H01L2224/13472	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13472		
H01L2224/13473	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13473		
H01L2224/13476	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13476		
H01L2224/13478	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13478		
H01L2224/13479	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13479		
H01L2224/1348	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1348		
H01L2224/13481	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13481		
H01L2224/13483	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13483		1
H01L2224/13484	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13484		1
H01L2224/13486	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13486		5
H01L2224/13487	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13487		3
H01L2224/13488	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13488		1
H01L2224/1349	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1349		22
H01L2224/13491	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13491		3
H01L2224/13493	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/134&#160;-&#160;H01L2224/13491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13493		3
H01L2224/13494	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/134&#160;-&#160;H01L2224/13491	CPCONLY	H01L2224/13494		
H01L2224/13495	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/134&#160;-&#160;H01L2224/13491	CPCONLY	H01L2224/13495		
H01L2224/13498	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13498		
H01L2224/13499	16	Shape or distribution of the fillers	CPCONLY	H01L2224/13499		21
H01L2224/1354	12	Coating	CPCONLY	H01L2224/1354		34
H01L2224/13541	13	Structure	CPCONLY	H01L2224/13541		57
H01L2224/1355	13	Shape	CPCONLY	H01L2224/1355		24
H01L2224/13551	14	being non uniform	CPCONLY	H01L2224/13551		24
H01L2224/13552	15	comprising protrusions or indentations	CPCONLY	H01L2224/13552		18
H01L2224/13553	16	at the bonding interface of the bump connector, i.e. on the surface of the bump connector	CPCONLY	H01L2224/13553		32
H01L2224/1356	13	Disposition	CPCONLY	H01L2224/1356		9
H01L2224/13561	14	On the entire surface of the core, i.e. integral coating	CPCONLY	H01L2224/13561		81
H01L2224/13562	14	On the entire exposed surface of the core	CPCONLY	H01L2224/13562		254
H01L2224/13563	14	Only on parts of the surface of the core, i.e. partial coating	CPCONLY	H01L2224/13563		28
H01L2224/13564	15	Only on the bonding interface of the bump connector	CPCONLY	H01L2224/13564		137
H01L2224/13565	15	Only outside the bonding interface of the bump connector	CPCONLY	H01L2224/13565		172
H01L2224/13566	15	Both on and outside the bonding interface of the bump connector	CPCONLY	H01L2224/13566		80
H01L2224/1357	13	Single coating layer	CPCONLY	H01L2224/1357		456
H01L2224/13575	13	Plural coating layers	CPCONLY	H01L2224/13575		16
H01L2224/13576	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/13576		7
H01L2224/13578	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/13578		19
H01L2224/1358	14	being stacked	CPCONLY	H01L2224/1358		41
H01L2224/13582	15	Two-layer coating	CPCONLY	H01L2224/13582		250
H01L2224/13583	15	Three-layer coating	CPCONLY	H01L2224/13583		70
H01L2224/13584	15	Four-layer coating	CPCONLY	H01L2224/13584		11
H01L2224/13599	13	Material	CPCONLY	H01L2224/13599		525
H01L2224/136	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/136		312
H01L2224/13601	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13601		8
H01L2224/13605	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13605		5
H01L2224/13609	16	Indium [In] as principal constituent	CPCONLY	H01L2224/13609		135
H01L2224/13611	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13611		281
H01L2224/13613	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13613		32
H01L2224/13614	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13614		
H01L2224/13616	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13616		47
H01L2224/13617	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13617		6
H01L2224/13618	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13618		24
H01L2224/1362	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1362		13
H01L2224/13623	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13623		2
H01L2224/13624	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13624		61
H01L2224/13638	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13638		5
H01L2224/13639	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13639		181
H01L2224/13644	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/13644		360
H01L2224/13647	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13647		229
H01L2224/13649	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13649		4
H01L2224/13655	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13655		365
H01L2224/13657	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13657		71
H01L2224/1366	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1366		19
H01L2224/13663	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13663		6
H01L2224/13664	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13664		125
H01L2224/13666	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13666		72
H01L2224/13669	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13669		43
H01L2224/1367	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1367		6
H01L2224/13671	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13671		48
H01L2224/13672	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13672		8
H01L2224/13673	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13673		10
H01L2224/13676	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13676		11
H01L2224/13678	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13678		4
H01L2224/13679	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13679		7
H01L2224/1368	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1368		15
H01L2224/13681	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13681		22
H01L2224/13683	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13683		3
H01L2224/13684	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13684		47
H01L2224/13686	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13686		75
H01L2224/13687	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13687		35
H01L2224/13688	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13688		4
H01L2224/1369	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1369		111
H01L2224/13691	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13691		3
H01L2224/13693	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/136&#160;-&#160;H01L2224/13691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13693		14
H01L2224/13694	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/136&#160;-&#160;H01L2224/13691	CPCONLY	H01L2224/13694		5
H01L2224/13695	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/136&#160;-&#160;H01L2224/13691	CPCONLY	H01L2224/13695		1
H01L2224/13698	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13698		1
H01L2224/13699	15	Material of the matrix	CPCONLY	H01L2224/13699		1
H01L2224/137	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/137		1
H01L2224/13701	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13701		
H01L2224/13705	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13705		
H01L2224/13709	18	Indium [In] as principal constituent	CPCONLY	H01L2224/13709		1
H01L2224/13711	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13711		1
H01L2224/13713	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13713		1
H01L2224/13714	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13714		
H01L2224/13716	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13716		
H01L2224/13717	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13717		
H01L2224/13718	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13718		
H01L2224/1372	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1372		
H01L2224/13723	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13723		
H01L2224/13724	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13724		
H01L2224/13738	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13738		
H01L2224/13739	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13739		
H01L2224/13744	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/13744		
H01L2224/13747	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13747		1
H01L2224/13749	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13749		
H01L2224/13755	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13755		
H01L2224/13757	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13757		
H01L2224/1376	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1376		
H01L2224/13763	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13763		
H01L2224/13764	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13764		
H01L2224/13766	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13766		
H01L2224/13769	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13769		
H01L2224/1377	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1377		
H01L2224/13771	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13771		
H01L2224/13772	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13772		
H01L2224/13773	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13773		
H01L2224/13776	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13776		
H01L2224/13778	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13778		
H01L2224/13779	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13779		
H01L2224/1378	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1378		
H01L2224/13781	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13781		
H01L2224/13783	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13783		
H01L2224/13784	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13784		
H01L2224/13786	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13786		
H01L2224/13787	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13787		
H01L2224/13788	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13788		
H01L2224/1379	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1379		29
H01L2224/13791	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13791		1
H01L2224/13793	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/137&#160;-&#160;H01L2224/13791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13793		1
H01L2224/13794	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/137&#160;-&#160;H01L2224/13791	CPCONLY	H01L2224/13794		8
H01L2224/13795	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/137&#160;-&#160;H01L2224/13791	CPCONLY	H01L2224/13795		
H01L2224/13798	15	Fillers	CPCONLY	H01L2224/13798		
H01L2224/13799	16	Base material	CPCONLY	H01L2224/13799		
H01L2224/138	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/138		15
H01L2224/13801	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13801		
H01L2224/13805	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13805		2
H01L2224/13809	19	Indium [In] as principal constituent	CPCONLY	H01L2224/13809		7
H01L2224/13811	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13811		12
H01L2224/13813	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13813		4
H01L2224/13814	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13814		
H01L2224/13816	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13816		2
H01L2224/13817	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13817		3
H01L2224/13818	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13818		4
H01L2224/1382	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1382		3
H01L2224/13823	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13823		
H01L2224/13824	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13824		2
H01L2224/13838	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13838		1
H01L2224/13839	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13839		19
H01L2224/13844	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/13844		14
H01L2224/13847	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13847		16
H01L2224/13849	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13849		3
H01L2224/13855	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13855		12
H01L2224/13857	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13857		3
H01L2224/1386	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1386		3
H01L2224/13863	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13863		1
H01L2224/13864	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13864		4
H01L2224/13866	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13866		2
H01L2224/13869	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13869		1
H01L2224/1387	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1387		
H01L2224/13871	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13871		2
H01L2224/13872	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13872		
H01L2224/13873	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13873		
H01L2224/13876	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13876		
H01L2224/13878	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13878		
H01L2224/13879	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13879		
H01L2224/1388	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1388		
H01L2224/13881	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13881		
H01L2224/13883	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13883		
H01L2224/13884	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13884		1
H01L2224/13886	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13886		3
H01L2224/13887	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13887		1
H01L2224/13888	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13888		1
H01L2224/1389	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1389		4
H01L2224/13891	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13891		1
H01L2224/13893	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/138&#160;-&#160;H01L2224/13891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13893		2
H01L2224/13894	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/138&#160;-&#160;H01L2224/13891	CPCONLY	H01L2224/13894		1
H01L2224/13895	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/138&#160;-&#160;H01L2224/13891	CPCONLY	H01L2224/13895		
H01L2224/13898	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13898		
H01L2224/13899	16	Coating material	CPCONLY	H01L2224/13899		1
H01L2224/139	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/139		
H01L2224/13901	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/13901		
H01L2224/13905	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/13905		
H01L2224/13909	19	Indium [In] as principal constituent	CPCONLY	H01L2224/13909		
H01L2224/13911	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/13911		2
H01L2224/13913	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/13913		1
H01L2224/13914	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/13914		
H01L2224/13916	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/13916		
H01L2224/13917	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/13917		
H01L2224/13918	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/13918		
H01L2224/1392	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/1392		
H01L2224/13923	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/13923		
H01L2224/13924	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/13924		
H01L2224/13938	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/13938		
H01L2224/13939	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/13939		2
H01L2224/13944	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/13944		2
H01L2224/13947	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/13947		2
H01L2224/13949	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/13949		
H01L2224/13955	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/13955		1
H01L2224/13957	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/13957		
H01L2224/1396	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/1396		
H01L2224/13963	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/13963		
H01L2224/13964	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/13964		
H01L2224/13966	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/13966		
H01L2224/13969	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/13969		
H01L2224/1397	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/1397		
H01L2224/13971	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/13971		
H01L2224/13972	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/13972		
H01L2224/13973	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/13973		
H01L2224/13976	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/13976		
H01L2224/13978	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/13978		
H01L2224/13979	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/13979		
H01L2224/1398	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/1398		
H01L2224/13981	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/13981		
H01L2224/13983	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/13983		
H01L2224/13984	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/13984		
H01L2224/13986	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/13986		
H01L2224/13987	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/13987		
H01L2224/13988	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/13988		
H01L2224/1399	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/1399		
H01L2224/13991	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/13991		
H01L2224/13993	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/139&#160;-&#160;H01L2224/13991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/13993		
H01L2224/13994	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/139&#160;-&#160;H01L2224/13991	CPCONLY	H01L2224/13994		
H01L2224/13995	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/139&#160;-&#160;H01L2224/13991	CPCONLY	H01L2224/13995		
H01L2224/13998	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/13998		
H01L2224/13999	16	Shape or distribution of the fillers	CPCONLY	H01L2224/13999		3
H01L2224/14	11	of a plurality of bump connectors	CPCONLY	H01L2224/14		1119
H01L2224/1401	12	Structure	CPCONLY	H01L2224/1401		70
H01L2224/1403	13	Bump connectors having different sizes, e.g. different diameters, heights or widths	CPCONLY	H01L2224/1403		1612
H01L2224/1405	12	Shape	CPCONLY	H01L2224/1405		43
H01L2224/14051	13	Bump connectors having different shapes	CPCONLY	H01L2224/14051		454
H01L2224/141	12	Disposition	CPCONLY	H01L2224/141		207
H01L2224/14104	13	relative to the bonding areas, e.g. bond pads, of the semiconductor or solid-state body	CPCONLY	H01L2224/14104		108
H01L2224/1411	14	the bump connectors being bonded to at least one common bonding area	CPCONLY	H01L2224/1411		248
H01L2224/1412	13	Layout	CPCONLY	H01L2224/1412		207
H01L2224/1413	14	Square or rectangular array	CPCONLY	H01L2224/1413		75
H01L2224/14131	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/14131		419
H01L2224/14132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/14132		112
H01L2224/14133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/14133		178
H01L2224/14134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/14134		80
H01L2224/14135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/14135		212
H01L2224/14136	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/14136		123
H01L2224/1414	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/1414		18
H01L2224/14141	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/14141		34
H01L2224/14142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/14142		16
H01L2224/14143	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/14143		6
H01L2224/14144	16	covering only portions of the surface to be connected	CPCONLY	H01L2224/14144		6
H01L2224/14145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/14145		26
H01L2224/14146	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/14146		8
H01L2224/1415	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/1415		49
H01L2224/14151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/14151		58
H01L2224/14152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/14152		63
H01L2224/14153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/14153		42
H01L2224/14154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/14154		46
H01L2224/14155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/14155		117
H01L2224/14156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/14156		28
H01L2224/1416	14	Random layout, i.e. layout with no symmetry	CPCONLY	H01L2224/1416		45
H01L2224/14163	15	with a staggered arrangement	CPCONLY	H01L2224/14163		14
H01L2224/14164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/14164		19
H01L2224/14165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/14165		18
H01L2224/14166	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/14166		5
H01L2224/14177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/14177		142
H01L2224/14179	14	Corner adaptations, i.e. disposition of the bump connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/14179		106
H01L2224/1418	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/1418		6
H01L2224/14181	14	On opposite sides of the body	CPCONLY	H01L2224/14181		829
H01L2224/14183	14	On contiguous sides of the body	CPCONLY	H01L2224/14183		24
H01L2224/145	12	Material	CPCONLY	H01L2224/145		42
H01L2224/14505	13	Bump connectors having different materials	CPCONLY	H01L2224/14505		190
H01L2224/1451	12	Function	CPCONLY	H01L2224/1451		7
H01L2224/14515	13	Bump connectors having different functions	CPCONLY	H01L2224/14515		130
H01L2224/14517	14	including bump connectors providing primarily mechanical bonding	CPCONLY	H01L2224/14517		120
H01L2224/14519	14	including bump connectors providing primarily thermal dissipation	CPCONLY	H01L2224/14519		62
H01L2224/15	10	Structure, shape, material or disposition of the bump connectors after the connecting process	CPCONLY	H01L2224/15		14
H01L2224/16	11	of an individual bump connector	CPCONLY	H01L2224/16		10796
H01L2224/1601	12	Structure	CPCONLY	H01L2224/1601		247
H01L2224/16012	13	relative to the bonding area, e.g. bond pad	CPCONLY	H01L2224/16012		61
H01L2224/16013	14	the bump connector being larger than the bonding area, e.g. bond pad	CPCONLY	H01L2224/16013		121
H01L2224/16014	14	the bump connector being smaller than the bonding area, e.g. bond pad	CPCONLY	H01L2224/16014		103
H01L2224/1605	12	Shape	CPCONLY	H01L2224/1605		28
H01L2224/16052	13	in top view	CPCONLY	H01L2224/16052		17
H01L2224/16054	14	being rectangular or square	CPCONLY	H01L2224/16054		19
H01L2224/16055	14	being circular or elliptic	CPCONLY	H01L2224/16055		83
H01L2224/16056	14	comprising protrusions or indentations	CPCONLY	H01L2224/16056		12
H01L2224/16057	13	in side view	CPCONLY	H01L2224/16057		196
H01L2224/16058	14	being non uniform along the bump connector	CPCONLY	H01L2224/16058		308
H01L2224/16059	14	comprising protrusions or indentations	CPCONLY	H01L2224/16059		115
H01L2224/1607	13	of bonding interfaces, e.g. interlocking features	CPCONLY	H01L2224/1607		107
H01L2224/161	12	Disposition	CPCONLY	H01L2224/161		21
H01L2224/16104	13	relative to the bonding area, e.g. bond pad	CPCONLY	H01L2224/16104		75
H01L2224/16105	14	the bump connector connecting bonding areas being not aligned with respect to each other	CPCONLY	H01L2224/16105		264
H01L2224/16106	14	the bump connector connecting one bonding area to at least two respective bonding areas	CPCONLY	H01L2224/16106		84
H01L2224/16108	13	the bump connector not being orthogonal to the surface	CPCONLY	H01L2224/16108		65
H01L2224/16111	13	the bump connector being disposed in a recess of the surface	CPCONLY	H01L2224/16111		115
H01L2224/16112	13	the bump connector being at least partially embedded in the surface	CPCONLY	H01L2224/16112		97
H01L2224/16113	13	the whole bump connector protruding from the surface	CPCONLY	H01L2224/16113		178
H01L2224/1613	13	the bump connector connecting within a semiconductor or solid-state body, i.e. connecting two bonding areas on the same semiconductor or solid-state body	CPCONLY	H01L2224/1613		30
H01L2224/16135	13	the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/16135		26
H01L2224/16137	14	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/16137		59
H01L2224/16141	14	the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements	CPCONLY	H01L2224/16141		16
H01L2224/16145	14	the bodies being stacked	CPCONLY	H01L2224/16145		8219
H01L2224/16146	15	the bump connector connecting to a via connection in the semiconductor or solid-state body	CPCONLY	H01L2224/16146		1777
H01L2224/16147	15	the bump connector connecting to a bonding area disposed in a recess of the surface	CPCONLY	H01L2224/16147		306
H01L2224/16148	15	the bump connector connecting to a bonding area protruding from the surface	CPCONLY	H01L2224/16148		557
H01L2224/16151	13	the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/16151		23
H01L2224/16153	14	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/16153		7
H01L2224/16155	15	the item being non-metallic, e.g. being an insulating substrate with or without metallisation	CPCONLY	H01L2224/16155		37
H01L2224/16157	16	the bump connector connecting to a bond pad of the item	CPCONLY	H01L2224/16157		95
H01L2224/1616	16	the bump connector connecting to a pin of the item	CPCONLY	H01L2224/1616		3
H01L2224/16163	16	the bump connector connecting to a potential ring of the item	CPCONLY	H01L2224/16163		1
H01L2224/16165	16	the bump connector connecting to a via metallisation of the item	CPCONLY	H01L2224/16165		26
H01L2224/16167	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16167		4
H01L2224/16168	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16168		28
H01L2224/16175	15	the item being metallic	CPCONLY	H01L2224/16175		11
H01L2224/16183	16	the bump connector connecting to a potential ring of the item	CPCONLY	H01L2224/16183		
H01L2224/16187	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16187		
H01L2224/16188	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16188		6
H01L2224/16195	15	the item being a discrete passive component	CPCONLY	H01L2224/16195		9
H01L2224/16197	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16197		1
H01L2224/16198	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16198		4
H01L2224/16221	14	the body and the item being stacked	CPCONLY	H01L2224/16221		138
H01L2224/16225	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/16225		35708
H01L2224/16227	16	the bump connector connecting to a bond pad of the item	CPCONLY	H01L2224/16227		11097
H01L2224/1623	16	the bump connector connecting to a pin of the item	CPCONLY	H01L2224/1623		21
H01L2224/16233	16	the bump connector connecting to a potential ring of the item	CPCONLY	H01L2224/16233		
H01L2224/16235	16	the bump connector connecting to a via metallisation of the item	CPCONLY	H01L2224/16235		3034
H01L2224/16237	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16237		2143
H01L2224/16238	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16238		2111
H01L2224/1624	16	the bump connector connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/1624		46
H01L2224/16245	15	the item being metallic	CPCONLY	H01L2224/16245		3196
H01L2224/16253	16	the bump connector connecting to a potential ring of the item	CPCONLY	H01L2224/16253		1
H01L2224/16257	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16257		36
H01L2224/16258	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16258		70
H01L2224/1626	16	the bump connector connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/1626		10
H01L2224/16265	15	the item being a discrete passive component	CPCONLY	H01L2224/16265		414
H01L2224/16267	16	the bump connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/16267		20
H01L2224/16268	16	the bump connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/16268		39
H01L2224/165	12	Material	CPCONLY	H01L2224/165		31
H01L2224/16501	13	at the bonding interface	CPCONLY	H01L2224/16501		76
H01L2224/16502	14	comprising an eutectic alloy	CPCONLY	H01L2224/16502		41
H01L2224/16503	14	comprising an intermetallic compound	CPCONLY	H01L2224/16503		197
H01L2224/16505	13	outside the bonding interface, e.g. in the bulk of the bump connector	CPCONLY	H01L2224/16505		52
H01L2224/16506	14	comprising an eutectic alloy	CPCONLY	H01L2224/16506		21
H01L2224/16507	14	comprising an intermetallic compound	CPCONLY	H01L2224/16507		71
H01L2224/17	11	of a plurality of bump connectors	CPCONLY	H01L2224/17		335
H01L2224/1701	12	Structure	CPCONLY	H01L2224/1701		61
H01L2224/1703	13	Bump connectors having different sizes, e.g. different diameters, heights or widths	CPCONLY	H01L2224/1703		974
H01L2224/1705	12	Shape	CPCONLY	H01L2224/1705		23
H01L2224/17051	13	Bump connectors having different shapes	CPCONLY	H01L2224/17051		302
H01L2224/17055	14	of their bonding interfaces	CPCONLY	H01L2224/17055		34
H01L2224/171	12	Disposition	CPCONLY	H01L2224/171		208
H01L2224/17104	13	relative to the bonding areas, e.g. bond pads	CPCONLY	H01L2224/17104		119
H01L2224/17106	14	the bump connectors being bonded to at least one common bonding area	CPCONLY	H01L2224/17106		143
H01L2224/17107	15	the bump connectors connecting two common bonding areas	CPCONLY	H01L2224/17107		93
H01L2224/1712	13	Layout	CPCONLY	H01L2224/1712		94
H01L2224/1713	14	Square or rectangular array	CPCONLY	H01L2224/1713		70
H01L2224/17132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/17132		34
H01L2224/17133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/17133		26
H01L2224/17134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/17134		20
H01L2224/17135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/17135		31
H01L2224/17136	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/17136		20
H01L2224/1714	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/1714		4
H01L2224/17142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/17142		1
H01L2224/17143	15	with a staggered arrangement	CPCONLY	H01L2224/17143		2
H01L2224/17144	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/17144		
H01L2224/17145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/17145		
H01L2224/17146	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/17146		1
H01L2224/1715	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/1715		9
H01L2224/17151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/17151		10
H01L2224/17152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/17152		11
H01L2224/17153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/17153		7
H01L2224/17154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/17154		9
H01L2224/17155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/17155		20
H01L2224/17156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/17156		5
H01L2224/1716	14	Random layout, i.e. layout with no symmetry	CPCONLY	H01L2224/1716		5
H01L2224/17163	15	with a staggered arrangement	CPCONLY	H01L2224/17163		6
H01L2224/17164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/17164		4
H01L2224/17165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/17165		3
H01L2224/17166	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/17166		1
H01L2224/17177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/17177		38
H01L2224/17179	14	Corner adaptations, i.e. disposition of the bump connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/17179		39
H01L2224/1718	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/1718		10
H01L2224/17181	14	On opposite sides of the body	CPCONLY	H01L2224/17181		1698
H01L2224/17183	14	On contiguous sides of the body	CPCONLY	H01L2224/17183		21
H01L2224/175	12	Material	CPCONLY	H01L2224/175		24
H01L2224/17505	13	Bump connectors having different materials	CPCONLY	H01L2224/17505		69
H01L2224/1751	12	Function	CPCONLY	H01L2224/1751		7
H01L2224/17515	13	Bump connectors having different functions	CPCONLY	H01L2224/17515		78
H01L2224/17517	14	including bump connectors providing primarily mechanical support	CPCONLY	H01L2224/17517		247
H01L2224/17519	14	including bump connectors providing primarily thermal dissipation	CPCONLY	H01L2224/17519		123
H01L2224/18	9	High density interconnect [HDI] connectors; Manufacturing methods related thereto	CPCONLY	H01L2224/18		3483
H01L2224/19	10	Manufacturing methods of high density interconnect preforms	CPCONLY	H01L2224/19		2545
H01L2224/20	10	Structure, shape, material or disposition of high density interconnect preforms	CPCONLY	H01L2224/20		845
H01L2224/21	11	of an individual HDI interconnect	CPCONLY	H01L2224/21		59
H01L2224/2101	12	Structure	CPCONLY	H01L2224/2101		225
H01L2224/2105	12	Shape	CPCONLY	H01L2224/2105		125
H01L2224/211	12	Disposition	CPCONLY	H01L2224/211		378
H01L2224/214	12	Connecting portions	CPCONLY	H01L2224/214		974
H01L2224/215	12	Material	CPCONLY	H01L2224/215		275
H01L2224/22	11	of a plurality of HDI interconnects	CPCONLY	H01L2224/22		28
H01L2224/2201	12	Structure	CPCONLY	H01L2224/2201		23
H01L2224/2205	12	Shape	CPCONLY	H01L2224/2205		15
H01L2224/221	12	Disposition	CPCONLY	H01L2224/221		214
H01L2224/224	12	Connecting portions	CPCONLY	H01L2224/224		17
H01L2224/225	12	Material	CPCONLY	H01L2224/225		6
H01L2224/22505	13	HDI interconnects having different materials	CPCONLY	H01L2224/22505		1
H01L2224/23	10	Structure, shape, material or disposition of the high density interconnect connectors after the connecting process	CPCONLY	H01L2224/23		2
H01L2224/24	11	of an individual high density interconnect connector	CPCONLY	H01L2224/24		926
H01L2224/2401	12	Structure	CPCONLY	H01L2224/2401		30
H01L2224/24011	13	Deposited, e.g. MCM-D type	CPCONLY	H01L2224/24011		373
H01L2224/2402	13	Laminated, e.g. MCM-L type	CPCONLY	H01L2224/2402		223
H01L2224/2405	12	Shape	CPCONLY	H01L2224/2405		100
H01L2224/24051	13	Conformal with the semiconductor or solid-state device	CPCONLY	H01L2224/24051		530
H01L2224/241	12	Disposition	CPCONLY	H01L2224/241		9
H01L2224/24101	13	Connecting bonding areas at the same height	CPCONLY	H01L2224/24101		192
H01L2224/24105	13	Connecting bonding areas at different heights	CPCONLY	H01L2224/24105		223
H01L2224/2413	13	Connecting within a semiconductor or solid-state body	CPCONLY	H01L2224/2413		86
H01L2224/24135	13	Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/24135		14
H01L2224/24137	14	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/24137		1928
H01L2224/24141	14	the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements	CPCONLY	H01L2224/24141		6
H01L2224/24145	14	the bodies being stacked	CPCONLY	H01L2224/24145		573
H01L2224/24146	15	the HDI interconnect connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted	CPCONLY	H01L2224/24146		312
H01L2224/24147	15	the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body	CPCONLY	H01L2224/24147		188
H01L2224/24151	13	Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/24151		9
H01L2224/24153	14	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/24153		9
H01L2224/24155	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/24155		127
H01L2224/24175	15	the item being metallic	CPCONLY	H01L2224/24175		75
H01L2224/24195	15	the item being a discrete passive component	CPCONLY	H01L2224/24195		558
H01L2224/24221	14	the body and the item being stacked	CPCONLY	H01L2224/24221		17
H01L2224/24225	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/24225		453
H01L2224/24226	16	the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar	CPCONLY	H01L2224/24226		1036
H01L2224/24227	16	the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item	CPCONLY	H01L2224/24227		965
H01L2224/24245	15	the item being metallic	CPCONLY	H01L2224/24245		100
H01L2224/24246	16	the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar	CPCONLY	H01L2224/24246		108
H01L2224/24247	16	the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item	CPCONLY	H01L2224/24247		83
H01L2224/24265	15	the item being a discrete passive component	CPCONLY	H01L2224/24265		76
H01L2224/244	12	Connecting portions	CPCONLY	H01L2224/244		151
H01L2224/245	12	Material	CPCONLY	H01L2224/245		255
H01L2224/2499	12	Auxiliary members for HDI interconnects, e.g. spacers, alignment aids	CPCONLY	H01L2224/2499		18
H01L2224/24991	13	being formed on the semiconductor or solid-state body to be connected	CPCONLY	H01L2224/24991		39
H01L2224/24992	14	Flow barrier	CPCONLY	H01L2224/24992		12
H01L2224/24996	13	being formed on an item to be connected not being a semiconductor or solid-state body	CPCONLY	H01L2224/24996		8
H01L2224/24997	14	Flow barrier	CPCONLY	H01L2224/24997		14
H01L2224/24998	14	Reinforcing structures, e.g. ramp-like support	CPCONLY	H01L2224/24998		254
H01L2224/25	11	of a plurality of high density interconnect connectors	CPCONLY	H01L2224/25		111
H01L2224/2501	12	Structure	CPCONLY	H01L2224/2501		16
H01L2224/2505	12	Shape	CPCONLY	H01L2224/2505		17
H01L2224/251	12	Disposition	CPCONLY	H01L2224/251		10
H01L2224/25105	13	Connecting at different heights	CPCONLY	H01L2224/25105		19
H01L2224/2511	13	the connectors being bonded to at least one common bonding area	CPCONLY	H01L2224/2511		8
H01L2224/25111	14	the connectors connecting two common bonding areas	CPCONLY	H01L2224/25111		
H01L2224/25112	14	the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body	CPCONLY	H01L2224/25112		2
H01L2224/25113	14	the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body	CPCONLY	H01L2224/25113		1
H01L2224/2512	13	Layout	CPCONLY	H01L2224/2512		28
H01L2224/25171	14	Fan-out arrangements	CPCONLY	H01L2224/25171		187
H01L2224/25174	14	Stacked arrangements	CPCONLY	H01L2224/25174		30
H01L2224/25175	14	Parallel arrangements	CPCONLY	H01L2224/25175		175
H01L2224/25177	14	Combinations of a plurality of arrangements	CPCONLY	H01L2224/25177		14
H01L2224/2518	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/2518		806
H01L2224/254	12	Connecting portions	CPCONLY	H01L2224/254		5
H01L2224/2541	13	the connecting portions being stacked	CPCONLY	H01L2224/2541		8
H01L2224/2543	13	the connecting portions being staggered	CPCONLY	H01L2224/2543		2
H01L2224/255	12	Material	CPCONLY	H01L2224/255		4
H01L2224/26	9	Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto	CPCONLY	H01L2224/26		44
H01L2224/2612	10	Auxiliary members for layer connectors, e.g. spacers	CPCONLY	H01L2224/2612		1532
H01L2224/26122	11	being formed on the semiconductor or solid-state body to be connected	CPCONLY	H01L2224/26122		32
H01L2224/26125	12	Reinforcing structures	CPCONLY	H01L2224/26125		34
H01L2224/26135	12	Alignment aids	CPCONLY	H01L2224/26135		33
H01L2224/26145	12	Flow barriers	CPCONLY	H01L2224/26145		365
H01L2224/26152	11	being formed on an item to be connected not being a semiconductor or solid-state body	CPCONLY	H01L2224/26152		23
H01L2224/26155	12	Reinforcing structures	CPCONLY	H01L2224/26155		38
H01L2224/26165	12	Alignment aids	CPCONLY	H01L2224/26165		56
H01L2224/26175	12	Flow barriers	CPCONLY	H01L2224/26175		1099
H01L2224/27	10	Manufacturing methods	CPCONLY	H01L2224/27		613
H01L2224/27001	11	Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/27001		47
H01L2224/27002	12	for supporting the semiconductor or solid-state body	CPCONLY	H01L2224/27002		80
H01L2224/27003	12	for holding or transferring the layer preform	CPCONLY	H01L2224/27003		247
H01L2224/27005	12	for aligning the layer connector, e.g. marks, spacers	CPCONLY	H01L2224/27005		31
H01L2224/27009	12	for protecting parts during manufacture	CPCONLY	H01L2224/27009		23
H01L2224/27011	11	Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature	CPCONLY	H01L2224/27011		9
H01L2224/27013	12	for holding or confining the layer connector, e.g. solder flow barrier	CPCONLY	H01L2224/27013		1149
H01L2224/27015	12	for aligning the layer connector, e.g. marks, spacers	CPCONLY	H01L2224/27015		7
H01L2224/27019	12	for protecting parts during the process	CPCONLY	H01L2224/27019		8
H01L2224/271	11	Manufacture and pre-treatment of the layer connector preform	CPCONLY	H01L2224/271		210
H01L2224/2711	12	Shaping	CPCONLY	H01L2224/2711		84
H01L2224/2712	12	Applying permanent coating	CPCONLY	H01L2224/2712		54
H01L2224/273	11	by local deposition of the material of the layer connector	CPCONLY	H01L2224/273		21
H01L2224/2731	12	in liquid form	CPCONLY	H01L2224/2731		161
H01L2224/27312	13	Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion	CPCONLY	H01L2224/27312		207
H01L2224/27318	13	by dispensing droplets	CPCONLY	H01L2224/27318		97
H01L2224/2732	13	Screen printing, i.e. using a stencil	CPCONLY	H01L2224/2732		442
H01L2224/2733	12	in solid form	CPCONLY	H01L2224/2733		13
H01L2224/27332	13	using a powder	CPCONLY	H01L2224/27332		53
H01L2224/27334	13	using preformed layer	CPCONLY	H01L2224/27334		320
H01L2224/274	11	by blanket deposition of the material of the layer connector	CPCONLY	H01L2224/274		946
H01L2224/2741	12	in liquid form	CPCONLY	H01L2224/2741		100
H01L2224/27416	13	Spin coating	CPCONLY	H01L2224/27416		134
H01L2224/27418	13	Spray coating	CPCONLY	H01L2224/27418		96
H01L2224/2742	13	Curtain coating	CPCONLY	H01L2224/2742		3
H01L2224/27422	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/27422		36
H01L2224/27424	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/27424		2
H01L2224/27426	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/27426		3
H01L2224/27428	13	Wave coating	CPCONLY	H01L2224/27428		1
H01L2224/2743	12	in solid form	CPCONLY	H01L2224/2743		5
H01L2224/27436	13	Lamination of a preform, e.g. foil, sheet or layer	CPCONLY	H01L2224/27436		516
H01L2224/27438	14	the preform being at least partly pre-patterned	CPCONLY	H01L2224/27438		34
H01L2224/2744	14	by transfer printing	CPCONLY	H01L2224/2744		35
H01L2224/27442	13	using a powder	CPCONLY	H01L2224/27442		21
H01L2224/27444	12	in gaseous form	CPCONLY	H01L2224/27444		17
H01L2224/2745	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/2745		143
H01L2224/27452	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/27452		76
H01L2224/2746	12	Plating	CPCONLY	H01L2224/2746		63
H01L2224/27462	13	Electroplating	CPCONLY	H01L2224/27462		122
H01L2224/27464	13	Electroless plating	CPCONLY	H01L2224/27464		47
H01L2224/27466	12	Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface	CPCONLY	H01L2224/27466		3
H01L2224/2747	11	using a lift-off mask	CPCONLY	H01L2224/2747		63
H01L2224/27472	12	Profile of the lift-off mask	CPCONLY	H01L2224/27472		7
H01L2224/27474	12	Multilayer masks	CPCONLY	H01L2224/27474		4
H01L2224/2748	12	Permanent masks, i.e. masks left in the finished device, e.g. passivation layers	CPCONLY	H01L2224/2748		5
H01L2224/275	11	by chemical or physical modification of a pre-existing or pre-deposited material	CPCONLY	H01L2224/275		20
H01L2224/27502	12	Pre-existing or pre-deposited material	CPCONLY	H01L2224/27502		10
H01L2224/27505	12	Sintering	CPCONLY	H01L2224/27505		111
H01L2224/2751	12	Anodisation	CPCONLY	H01L2224/2751		1
H01L2224/27515	12	Curing and solidification, e.g. of a photosensitive layer material	CPCONLY	H01L2224/27515		70
H01L2224/2752	12	Self-assembly, e.g. self-agglomeration of the layer material in a fluid	CPCONLY	H01L2224/2752		2
H01L2224/27522	13	Auxiliary means therefor, e.g. for self-assembly activation	CPCONLY	H01L2224/27522		1
H01L2224/27524	13	with special adaptation of the surface or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process	CPCONLY	H01L2224/27524		
H01L2224/27526	13	involving the material of the bonding area, e.g. bonding pad	CPCONLY	H01L2224/27526		1
H01L2224/2755	12	Selective modification	CPCONLY	H01L2224/2755		12
H01L2224/27552	13	using a laser or a focussed ion beam [FIB]	CPCONLY	H01L2224/27552		10
H01L2224/27554	14	Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin	CPCONLY	H01L2224/27554		4
H01L2224/276	11	by patterning a pre-deposited material	CPCONLY	H01L2224/276		21
H01L2224/27602	12	Mechanical treatment, e.g. polishing, grinding	CPCONLY	H01L2224/27602		22
H01L2224/2761	12	Physical or chemical etching	CPCONLY	H01L2224/2761		35
H01L2224/27612	13	by physical means only	CPCONLY	H01L2224/27612		3
H01L2224/27614	13	by chemical means only	CPCONLY	H01L2224/27614		18
H01L2224/27616	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/27616		19
H01L2224/27618	12	with selective exposure, development and removal of a photosensitive layer material, e.g. of a photosensitive conductive resin	CPCONLY	H01L2224/27618		63
H01L2224/2762	12	using masks	CPCONLY	H01L2224/2762		9
H01L2224/27622	13	Photolithography	CPCONLY	H01L2224/27622		46
H01L2224/2763	12	using a laser or a focused ion beam [FIB]	CPCONLY	H01L2224/2763		7
H01L2224/27632	13	Ablation by means of a laser or focused ion beam [FIB]	CPCONLY	H01L2224/27632		9
H01L2224/277	11	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/277		10
H01L2224/278	11	Post-treatment of the layer connector	CPCONLY	H01L2224/278		31
H01L2224/2781	12	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/2781		21
H01L2224/2782	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/2782		7
H01L2224/27821	13	Spray coating	CPCONLY	H01L2224/27821		2
H01L2224/27822	13	by dipping, e.g. in a solder bath	CPCONLY	H01L2224/27822		1
H01L2224/27823	13	Immersion coating, e.g. in a solder bath	CPCONLY	H01L2224/27823		3
H01L2224/27824	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/27824		
H01L2224/27825	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/27825		12
H01L2224/27826	13	Physical vapour deposition [PVD], e.g. evaporation, or sputtering	CPCONLY	H01L2224/27826		5
H01L2224/27827	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/27827		2
H01L2224/2783	12	Reworking, e.g. shaping	CPCONLY	H01L2224/2783		34
H01L2224/27831	13	involving a chemical process, e.g. etching the layer connector	CPCONLY	H01L2224/27831		33
H01L2224/2784	13	involving a mechanical process, e.g. planarising the layer connector	CPCONLY	H01L2224/2784		93
H01L2224/27845	13	Chemical mechanical polishing [CMP]	CPCONLY	H01L2224/27845		37
H01L2224/27848	12	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/27848		206
H01L2224/27849	13	Reflowing	CPCONLY	H01L2224/27849		36
H01L2224/279	11	Methods of manufacturing layer connectors involving a specific sequence of method steps	CPCONLY	H01L2224/279		50
H01L2224/27901	12	with repetition of the same manufacturing step	CPCONLY	H01L2224/27901		34
H01L2224/27902	13	Multiple masking steps	CPCONLY	H01L2224/27902		
H01L2224/27903	14	using different masks	CPCONLY	H01L2224/27903		3
H01L2224/27906	14	with modification of the same mask	CPCONLY	H01L2224/27906		2
H01L2224/2791	12	Forming a passivation layer after forming the layer connector	CPCONLY	H01L2224/2791		1
H01L2224/27912	12	the layer being used as a mask for patterning other parts	CPCONLY	H01L2224/27912		5
H01L2224/27916	12	a passivation layer being used as a mask for patterning other parts	CPCONLY	H01L2224/27916		1
H01L2224/28	10	Structure, shape, material or disposition of the layer connectors prior to the connecting process	CPCONLY	H01L2224/28		11
H01L2224/28105	11	Layer connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. layer connectors on chip-scale packages	CPCONLY	H01L2224/28105		42
H01L2224/29	11	of an individual layer connector	CPCONLY	H01L2224/29		560
H01L2224/29001	12	Core members of the layer connector	CPCONLY	H01L2224/29001		5
H01L2224/29005	13	Structure	CPCONLY	H01L2224/29005		120
H01L2224/29006	14	Layer connector larger than the underlying bonding area	CPCONLY	H01L2224/29006		106
H01L2224/29007	14	Layer connector smaller than the underlying bonding area	CPCONLY	H01L2224/29007		334
H01L2224/29008	14	Layer connector integrally formed with a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/29008		12
H01L2224/29009	14	Layer connector integrally formed with a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/29009		27
H01L2224/2901	13	Shape	CPCONLY	H01L2224/2901		17
H01L2224/29011	14	comprising apertures or cavities	CPCONLY	H01L2224/29011		509
H01L2224/29012	14	in top view	CPCONLY	H01L2224/29012		153
H01L2224/29013	15	being rectangular or square	CPCONLY	H01L2224/29013		182
H01L2224/29014	15	being circular or elliptic	CPCONLY	H01L2224/29014		87
H01L2224/29015	15	comprising protrusions or indentations	CPCONLY	H01L2224/29015		92
H01L2224/29016	14	in side view	CPCONLY	H01L2224/29016		77
H01L2224/29017	15	being non uniform along the layer connector	CPCONLY	H01L2224/29017		109
H01L2224/29018	15	comprising protrusions or indentations	CPCONLY	H01L2224/29018		76
H01L2224/29019	16	at the bonding interface of the layer connector, i.e. on the surface of the layer connector	CPCONLY	H01L2224/29019		123
H01L2224/2902	13	Disposition	CPCONLY	H01L2224/2902		48
H01L2224/29021	14	the layer connector being disposed in a recess of the surface	CPCONLY	H01L2224/29021		51
H01L2224/29022	14	the layer connector being at least partially embedded in the surface	CPCONLY	H01L2224/29022		51
H01L2224/29023	14	the whole layer connector protruding from the surface	CPCONLY	H01L2224/29023		84
H01L2224/29024	14	the layer connector being disposed on a redistribution layer on the semiconductor or solid-state body	CPCONLY	H01L2224/29024		16
H01L2224/29025	14	the layer connector being disposed on a via connection of the semiconductor or solid-state body	CPCONLY	H01L2224/29025		26
H01L2224/29026	14	relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body	CPCONLY	H01L2224/29026		43
H01L2224/29027	15	the layer connector being offset with respect to the bonding area, e.g. bond pad	CPCONLY	H01L2224/29027		16
H01L2224/29028	15	the layer connector being disposed on at least two separate bonding areas, e.g. bond pads	CPCONLY	H01L2224/29028		48
H01L2224/29034	14	the layer connector covering only portions of the surface to be connected	CPCONLY	H01L2224/29034		55
H01L2224/29035	15	covering only the peripheral area of the surface to be connected	CPCONLY	H01L2224/29035		71
H01L2224/29036	15	covering only the central area of the surface to be connected	CPCONLY	H01L2224/29036		99
H01L2224/29075	13	Plural core members	CPCONLY	H01L2224/29075		139
H01L2224/29076	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/29076		221
H01L2224/29078	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/29078		168
H01L2224/2908	14	being stacked	CPCONLY	H01L2224/2908		184
H01L2224/29082	15	Two-layer arrangements	CPCONLY	H01L2224/29082		402
H01L2224/29083	15	Three-layer arrangements	CPCONLY	H01L2224/29083		276
H01L2224/29084	15	Four-layer arrangements	CPCONLY	H01L2224/29084		53
H01L2224/29099	13	Material	CPCONLY	H01L2224/29099		2402
H01L2224/291	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/291		2086
H01L2224/29101	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29101		1684
H01L2224/29105	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29105		82
H01L2224/29109	16	Indium [In] as principal constituent	CPCONLY	H01L2224/29109		517
H01L2224/29111	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29111		1992
H01L2224/29113	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29113		190
H01L2224/29114	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29114		2
H01L2224/29116	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29116		249
H01L2224/29117	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29117		50
H01L2224/29118	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29118		161
H01L2224/2912	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2912		86
H01L2224/29123	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29123		19
H01L2224/29124	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29124		281
H01L2224/29138	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29138		59
H01L2224/29139	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29139		899
H01L2224/29144	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/29144		789
H01L2224/29147	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29147		747
H01L2224/29149	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29149		13
H01L2224/29155	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29155		341
H01L2224/29157	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29157		41
H01L2224/2916	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2916		50
H01L2224/29163	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29163		15
H01L2224/29164	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29164		90
H01L2224/29166	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29166		153
H01L2224/29169	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29169		84
H01L2224/2917	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2917		8
H01L2224/29171	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29171		41
H01L2224/29172	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29172		16
H01L2224/29173	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29173		8
H01L2224/29176	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29176		8
H01L2224/29178	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29178		7
H01L2224/29179	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29179		5
H01L2224/2918	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2918		32
H01L2224/29181	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29181		26
H01L2224/29183	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29183		3
H01L2224/29184	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29184		67
H01L2224/29186	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29186		276
H01L2224/29187	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29187		111
H01L2224/29188	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29188		80
H01L2224/2919	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2919		6676
H01L2224/29191	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29191		273
H01L2224/29193	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/291&#160;-&#160;H01L2224/29191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29193		110
H01L2224/29194	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/291&#160;-&#160;H01L2224/29191	CPCONLY	H01L2224/29194		46
H01L2224/29195	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/291&#160;-&#160;H01L2224/29191	CPCONLY	H01L2224/29195		7
H01L2224/29198	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29198		89
H01L2224/29199	15	Material of the matrix	CPCONLY	H01L2224/29199		912
H01L2224/292	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/292		67
H01L2224/29201	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29201		5
H01L2224/29205	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29205		6
H01L2224/29209	18	Indium [In] as principal constituent	CPCONLY	H01L2224/29209		23
H01L2224/29211	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29211		65
H01L2224/29213	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29213		16
H01L2224/29214	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29214		
H01L2224/29216	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29216		9
H01L2224/29217	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29217		4
H01L2224/29218	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29218		16
H01L2224/2922	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2922		7
H01L2224/29223	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29223		3
H01L2224/29224	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29224		21
H01L2224/29238	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29238		2
H01L2224/29239	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29239		91
H01L2224/29244	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/29244		37
H01L2224/29247	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29247		79
H01L2224/29249	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29249		3
H01L2224/29255	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29255		43
H01L2224/29257	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29257		5
H01L2224/2926	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2926		8
H01L2224/29263	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29263		4
H01L2224/29264	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29264		15
H01L2224/29266	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29266		9
H01L2224/29269	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29269		14
H01L2224/2927	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2927		2
H01L2224/29271	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29271		4
H01L2224/29272	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29272		2
H01L2224/29273	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29273		1
H01L2224/29276	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29276		
H01L2224/29278	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29278		
H01L2224/29279	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29279		
H01L2224/2928	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2928		5
H01L2224/29281	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29281		1
H01L2224/29283	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29283		
H01L2224/29284	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29284		3
H01L2224/29286	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29286		26
H01L2224/29287	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29287		15
H01L2224/29288	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29288		25
H01L2224/2929	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2929		3443
H01L2224/29291	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29291		134
H01L2224/29293	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/292&#160;-&#160;H01L2224/29291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29293		26
H01L2224/29294	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/292&#160;-&#160;H01L2224/29291	CPCONLY	H01L2224/29294		584
H01L2224/29295	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/292&#160;-&#160;H01L2224/29291	CPCONLY	H01L2224/29295		15
H01L2224/29298	15	Fillers	CPCONLY	H01L2224/29298		604
H01L2224/29299	16	Base material	CPCONLY	H01L2224/29299		949
H01L2224/293	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/293		1396
H01L2224/29301	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29301		20
H01L2224/29305	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29305		31
H01L2224/29309	19	Indium [In] as principal constituent	CPCONLY	H01L2224/29309		108
H01L2224/29311	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29311		314
H01L2224/29313	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29313		82
H01L2224/29314	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29314		4
H01L2224/29316	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29316		90
H01L2224/29317	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29317		17
H01L2224/29318	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29318		95
H01L2224/2932	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2932		28
H01L2224/29323	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29323		10
H01L2224/29324	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29324		275
H01L2224/29338	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29338		37
H01L2224/29339	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29339		2087
H01L2224/29344	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/29344		617
H01L2224/29347	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29347		862
H01L2224/29349	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29349		15
H01L2224/29355	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29355		570
H01L2224/29357	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29357		95
H01L2224/2936	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2936		90
H01L2224/29363	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29363		19
H01L2224/29364	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29364		231
H01L2224/29366	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29366		51
H01L2224/29369	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29369		151
H01L2224/2937	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2937		15
H01L2224/29371	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29371		62
H01L2224/29372	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29372		8
H01L2224/29373	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29373		17
H01L2224/29376	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29376		10
H01L2224/29378	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29378		10
H01L2224/29379	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29379		4
H01L2224/2938	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2938		23
H01L2224/29381	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29381		5
H01L2224/29383	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29383		
H01L2224/29384	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29384		32
H01L2224/29386	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29386		654
H01L2224/29387	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29387		279
H01L2224/29388	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29388		142
H01L2224/2939	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2939		468
H01L2224/29391	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29391		44
H01L2224/29393	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/293&#160;-&#160;H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29393		302
H01L2224/29394	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/293&#160;-&#160;H01L2224/29391	CPCONLY	H01L2224/29394		10
H01L2224/29395	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/293&#160;-&#160;H01L2224/29391	CPCONLY	H01L2224/29395		25
H01L2224/29398	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29398		7
H01L2224/29399	16	Coating material	CPCONLY	H01L2224/29399		172
H01L2224/294	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/294		129
H01L2224/29401	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29401		7
H01L2224/29405	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29405		2
H01L2224/29409	19	Indium [In] as principal constituent	CPCONLY	H01L2224/29409		25
H01L2224/29411	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29411		59
H01L2224/29413	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29413		14
H01L2224/29414	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29414		1
H01L2224/29416	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29416		12
H01L2224/29417	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29417		8
H01L2224/29418	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29418		17
H01L2224/2942	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2942		7
H01L2224/29423	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29423		2
H01L2224/29424	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29424		31
H01L2224/29438	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29438		8
H01L2224/29439	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29439		155
H01L2224/29444	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/29444		192
H01L2224/29447	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29447		93
H01L2224/29449	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29449		4
H01L2224/29455	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29455		171
H01L2224/29457	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29457		19
H01L2224/2946	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2946		10
H01L2224/29463	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29463		3
H01L2224/29464	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29464		36
H01L2224/29466	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29466		14
H01L2224/29469	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29469		26
H01L2224/2947	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2947		1
H01L2224/29471	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29471		14
H01L2224/29472	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29472		1
H01L2224/29473	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29473		3
H01L2224/29476	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29476		1
H01L2224/29478	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29478		1
H01L2224/29479	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29479		1
H01L2224/2948	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2948		9
H01L2224/29481	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29481		2
H01L2224/29483	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29483		
H01L2224/29484	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29484		8
H01L2224/29486	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29486		48
H01L2224/29487	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29487		16
H01L2224/29488	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29488		7
H01L2224/2949	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2949		155
H01L2224/29491	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29491		4
H01L2224/29493	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/294&#160;-&#160;H01L2224/29491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29493		28
H01L2224/29494	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/294&#160;-&#160;H01L2224/29491	CPCONLY	H01L2224/29494		3
H01L2224/29495	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/294&#160;-&#160;H01L2224/29491	CPCONLY	H01L2224/29495		1
H01L2224/29498	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29498		3
H01L2224/29499	16	Shape or distribution of the fillers	CPCONLY	H01L2224/29499		541
H01L2224/2954	12	Coating	CPCONLY	H01L2224/2954		1
H01L2224/29541	13	Structure	CPCONLY	H01L2224/29541		5
H01L2224/2955	13	Shape	CPCONLY	H01L2224/2955		2
H01L2224/29551	14	being non uniform	CPCONLY	H01L2224/29551		
H01L2224/29552	15	comprising protrusions or indentations	CPCONLY	H01L2224/29552		2
H01L2224/29553	16	at the bonding interface of the layer connector, i.e. on the surface of the layer connector	CPCONLY	H01L2224/29553		4
H01L2224/2956	13	Disposition	CPCONLY	H01L2224/2956		4
H01L2224/29561	14	On the entire surface of the core, i.e. integral coating	CPCONLY	H01L2224/29561		12
H01L2224/29562	14	On the entire exposed surface of the core	CPCONLY	H01L2224/29562		15
H01L2224/29563	14	Only on parts of the surface of the core, i.e. partial coating	CPCONLY	H01L2224/29563		6
H01L2224/29564	15	Only on the bonding interface of the layer connector	CPCONLY	H01L2224/29564		7
H01L2224/29565	15	Only outside the bonding interface of the layer connector	CPCONLY	H01L2224/29565		7
H01L2224/29566	15	Both on and outside the bonding interface of the layer connector	CPCONLY	H01L2224/29566		
H01L2224/2957	13	Single coating layer	CPCONLY	H01L2224/2957		62
H01L2224/29575	13	Plural coating layers	CPCONLY	H01L2224/29575		8
H01L2224/29576	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/29576		
H01L2224/29578	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/29578		
H01L2224/2958	14	being stacked	CPCONLY	H01L2224/2958		3
H01L2224/29582	15	Two-layer coating	CPCONLY	H01L2224/29582		18
H01L2224/29583	15	Three-layer coating	CPCONLY	H01L2224/29583		6
H01L2224/29584	15	Four-layer coating	CPCONLY	H01L2224/29584		
H01L2224/29599	13	Material	CPCONLY	H01L2224/29599		511
H01L2224/296	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/296		14
H01L2224/29601	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29601		
H01L2224/29605	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29605		1
H01L2224/29609	16	Indium [In] as principal constituent	CPCONLY	H01L2224/29609		5
H01L2224/29611	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29611		19
H01L2224/29613	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29613		4
H01L2224/29614	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29614		
H01L2224/29616	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29616		4
H01L2224/29617	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29617		2
H01L2224/29618	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29618		2
H01L2224/2962	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2962		
H01L2224/29623	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29623		
H01L2224/29624	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29624		9
H01L2224/29638	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29638		
H01L2224/29639	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29639		33
H01L2224/29644	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/29644		33
H01L2224/29647	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29647		23
H01L2224/29649	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29649		2
H01L2224/29655	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29655		22
H01L2224/29657	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29657		3
H01L2224/2966	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2966		
H01L2224/29663	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29663		1
H01L2224/29664	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29664		10
H01L2224/29666	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29666		15
H01L2224/29669	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29669		8
H01L2224/2967	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2967		
H01L2224/29671	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29671		7
H01L2224/29672	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29672		
H01L2224/29673	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29673		1
H01L2224/29676	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29676		3
H01L2224/29678	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29678		2
H01L2224/29679	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29679		
H01L2224/2968	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2968		
H01L2224/29681	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29681		3
H01L2224/29683	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29683		
H01L2224/29684	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29684		8
H01L2224/29686	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29686		7
H01L2224/29687	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29687		7
H01L2224/29688	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29688		1
H01L2224/2969	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2969		21
H01L2224/29691	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29691		4
H01L2224/29693	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/296&#160;-&#160;H01L2224/29691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29693		3
H01L2224/29694	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/296&#160;-&#160;H01L2224/29691	CPCONLY	H01L2224/29694		4
H01L2224/29695	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/296&#160;-&#160;H01L2224/29691	CPCONLY	H01L2224/29695		2
H01L2224/29698	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29698		
H01L2224/29699	15	Material of the matrix	CPCONLY	H01L2224/29699		
H01L2224/297	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/297		2
H01L2224/29701	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29701		
H01L2224/29705	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29705		
H01L2224/29709	18	Indium [In] as principal constituent	CPCONLY	H01L2224/29709		
H01L2224/29711	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29711		
H01L2224/29713	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29713		
H01L2224/29714	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29714		
H01L2224/29716	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29716		
H01L2224/29717	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29717		
H01L2224/29718	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29718		
H01L2224/2972	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2972		
H01L2224/29723	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29723		
H01L2224/29724	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29724		
H01L2224/29738	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29738		
H01L2224/29739	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29739		1
H01L2224/29744	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/29744		
H01L2224/29747	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29747		1
H01L2224/29749	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29749		
H01L2224/29755	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29755		
H01L2224/29757	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29757		
H01L2224/2976	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2976		
H01L2224/29763	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29763		
H01L2224/29764	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29764		
H01L2224/29766	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29766		
H01L2224/29769	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29769		
H01L2224/2977	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2977		
H01L2224/29771	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29771		
H01L2224/29772	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29772		
H01L2224/29773	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29773		
H01L2224/29776	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29776		
H01L2224/29778	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29778		
H01L2224/29779	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29779		
H01L2224/2978	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2978		
H01L2224/29781	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29781		
H01L2224/29783	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29783		
H01L2224/29784	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29784		
H01L2224/29786	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29786		
H01L2224/29787	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29787		1
H01L2224/29788	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29788		
H01L2224/2979	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2979		5
H01L2224/29791	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29791		1
H01L2224/29793	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/297&#160;-&#160;H01L2224/29791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29793		
H01L2224/29794	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/297&#160;-&#160;H01L2224/29791	CPCONLY	H01L2224/29794		1
H01L2224/29795	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/297&#160;-&#160;H01L2224/29791	CPCONLY	H01L2224/29795		
H01L2224/29798	15	Fillers	CPCONLY	H01L2224/29798		
H01L2224/29799	16	Base material	CPCONLY	H01L2224/29799		
H01L2224/298	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/298		2
H01L2224/29801	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29801		1
H01L2224/29805	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29805		1
H01L2224/29809	19	Indium [In] as principal constituent	CPCONLY	H01L2224/29809		1
H01L2224/29811	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29811		1
H01L2224/29813	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29813		1
H01L2224/29814	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29814		
H01L2224/29816	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29816		1
H01L2224/29817	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29817		1
H01L2224/29818	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29818		2
H01L2224/2982	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2982		1
H01L2224/29823	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29823		
H01L2224/29824	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29824		3
H01L2224/29838	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29838		1
H01L2224/29839	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29839		3
H01L2224/29844	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/29844		2
H01L2224/29847	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29847		3
H01L2224/29849	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29849		
H01L2224/29855	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29855		1
H01L2224/29857	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29857		
H01L2224/2986	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2986		
H01L2224/29863	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29863		
H01L2224/29864	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29864		
H01L2224/29866	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29866		
H01L2224/29869	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29869		
H01L2224/2987	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2987		
H01L2224/29871	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29871		
H01L2224/29872	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29872		
H01L2224/29873	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29873		
H01L2224/29876	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29876		
H01L2224/29878	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29878		
H01L2224/29879	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29879		
H01L2224/2988	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2988		
H01L2224/29881	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29881		
H01L2224/29883	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29883		
H01L2224/29884	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29884		
H01L2224/29886	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29886		1
H01L2224/29887	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29887		
H01L2224/29888	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29888		1
H01L2224/2989	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2989		26
H01L2224/29891	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29891		1
H01L2224/29893	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/298&#160;-&#160;H01L2224/29891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29893		3
H01L2224/29894	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/298&#160;-&#160;H01L2224/29891	CPCONLY	H01L2224/29894		
H01L2224/29895	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/298&#160;-&#160;H01L2224/29891	CPCONLY	H01L2224/29895		
H01L2224/29898	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29898		
H01L2224/29899	16	Coating material	CPCONLY	H01L2224/29899		
H01L2224/299	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/299		1
H01L2224/29901	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/29901		
H01L2224/29905	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/29905		
H01L2224/29909	19	Indium [In] as principal constituent	CPCONLY	H01L2224/29909		
H01L2224/29911	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/29911		
H01L2224/29913	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/29913		
H01L2224/29914	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/29914		
H01L2224/29916	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/29916		
H01L2224/29917	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/29917		
H01L2224/29918	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/29918		
H01L2224/2992	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/2992		
H01L2224/29923	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/29923		
H01L2224/29924	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/29924		
H01L2224/29938	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/29938		
H01L2224/29939	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/29939		
H01L2224/29944	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/29944		
H01L2224/29947	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/29947		
H01L2224/29949	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/29949		
H01L2224/29955	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/29955		
H01L2224/29957	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/29957		
H01L2224/2996	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/2996		
H01L2224/29963	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/29963		
H01L2224/29964	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/29964		
H01L2224/29966	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/29966		
H01L2224/29969	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/29969		
H01L2224/2997	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/2997		
H01L2224/29971	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/29971		
H01L2224/29972	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/29972		
H01L2224/29973	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/29973		
H01L2224/29976	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/29976		
H01L2224/29978	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/29978		
H01L2224/29979	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/29979		
H01L2224/2998	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/2998		
H01L2224/29981	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/29981		
H01L2224/29983	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/29983		
H01L2224/29984	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/29984		
H01L2224/29986	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/29986		
H01L2224/29987	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/29987		1
H01L2224/29988	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/29988		
H01L2224/2999	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/2999		1
H01L2224/29991	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/29991		
H01L2224/29993	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/299&#160;-&#160;H01L2224/29991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/29993		
H01L2224/29994	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/299&#160;-&#160;H01L2224/29991	CPCONLY	H01L2224/29994		
H01L2224/29995	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/299&#160;-&#160;H01L2224/29991	CPCONLY	H01L2224/29995		
H01L2224/29998	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/29998		
H01L2224/29999	16	Shape or distribution of the fillers	CPCONLY	H01L2224/29999		1
H01L2224/30	11	of a plurality of layer connectors	CPCONLY	H01L2224/30		2
H01L2224/3001	12	Structure	CPCONLY	H01L2224/3001		8
H01L2224/3003	13	Layer connectors having different sizes, e.g. different heights or widths	CPCONLY	H01L2224/3003		88
H01L2224/3005	12	Shape	CPCONLY	H01L2224/3005		3
H01L2224/30051	13	Layer connectors having different shapes	CPCONLY	H01L2224/30051		51
H01L2224/301	12	Disposition	CPCONLY	H01L2224/301		33
H01L2224/30104	13	relative to the bonding areas, e.g. bond pads, of the semiconductor or solid-state body	CPCONLY	H01L2224/30104		14
H01L2224/3011	14	the layer connectors being bonded to at least one common bonding area	CPCONLY	H01L2224/3011		7
H01L2224/3012	13	Layout	CPCONLY	H01L2224/3012		35
H01L2224/3013	14	Square or rectangular array	CPCONLY	H01L2224/3013		3
H01L2224/30131	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/30131		30
H01L2224/30132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/30132		6
H01L2224/30133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/30133		1
H01L2224/30134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/30134		4
H01L2224/30135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/30135		13
H01L2224/30136	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/30136		3
H01L2224/3014	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/3014		1
H01L2224/30141	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/30141		3
H01L2224/30142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/30142		2
H01L2224/30143	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/30143		1
H01L2224/30145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/30145		2
H01L2224/30146	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/30146		1
H01L2224/3015	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/3015		36
H01L2224/30151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/30151		21
H01L2224/30152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/30152		5
H01L2224/30153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/30153		
H01L2224/30154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/30154		5
H01L2224/30155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/30155		27
H01L2224/30156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/30156		4
H01L2224/3016	14	Random layout, i.e. layout with no symmetry	CPCONLY	H01L2224/3016		10
H01L2224/30163	15	with a staggered arrangement	CPCONLY	H01L2224/30163		
H01L2224/30164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/30164		4
H01L2224/30165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/30165		1
H01L2224/30166	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/30166		2
H01L2224/30177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/30177		13
H01L2224/30179	14	Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/30179		14
H01L2224/3018	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/3018		1
H01L2224/30181	14	On opposite sides of the body	CPCONLY	H01L2224/30181		70
H01L2224/30183	14	On contiguous sides of the body	CPCONLY	H01L2224/30183		7
H01L2224/305	12	Material	CPCONLY	H01L2224/305		8
H01L2224/30505	13	Layer connectors having different materials	CPCONLY	H01L2224/30505		82
H01L2224/3051	12	Function	CPCONLY	H01L2224/3051		
H01L2224/30515	13	Layer connectors having different functions	CPCONLY	H01L2224/30515		6
H01L2224/30517	14	including layer connectors providing primarily mechanical bonding	CPCONLY	H01L2224/30517		10
H01L2224/30519	14	including layer connectors providing primarily thermal dissipation	CPCONLY	H01L2224/30519		13
H01L2224/31	10	Structure, shape, material or disposition of the layer connectors after the connecting process	CPCONLY	H01L2224/31		7
H01L2224/32	11	of an individual layer connector	CPCONLY	H01L2224/32		468
H01L2224/3201	12	Structure	CPCONLY	H01L2224/3201		224
H01L2224/32012	13	relative to the bonding area, e.g. bond pad	CPCONLY	H01L2224/32012		36
H01L2224/32013	14	the layer connector being larger than the bonding area, e.g. bond pad	CPCONLY	H01L2224/32013		613
H01L2224/32014	14	the layer connector being smaller than the bonding area, e.g. bond pad	CPCONLY	H01L2224/32014		1042
H01L2224/3205	12	Shape	CPCONLY	H01L2224/3205		19
H01L2224/32052	13	in top view	CPCONLY	H01L2224/32052		40
H01L2224/32053	14	being non uniform along the layer connector	CPCONLY	H01L2224/32053		24
H01L2224/32054	14	being rectangular or square	CPCONLY	H01L2224/32054		37
H01L2224/32055	14	being circular or elliptic	CPCONLY	H01L2224/32055		66
H01L2224/32056	14	comprising protrusions or indentations	CPCONLY	H01L2224/32056		23
H01L2224/32057	13	in side view	CPCONLY	H01L2224/32057		853
H01L2224/32058	14	being non uniform along the layer connector	CPCONLY	H01L2224/32058		296
H01L2224/32059	14	comprising protrusions or indentations	CPCONLY	H01L2224/32059		156
H01L2224/3207	13	of bonding interfaces, e.g. interlocking features	CPCONLY	H01L2224/3207		74
H01L2224/321	12	Disposition	CPCONLY	H01L2224/321		53
H01L2224/32104	13	relative to the bonding area, e.g. bond pad	CPCONLY	H01L2224/32104		40
H01L2224/32105	14	the layer connector connecting bonding areas being not aligned with respect to each other	CPCONLY	H01L2224/32105		201
H01L2224/32106	14	the layer connector connecting one bonding area to at least two respective bonding areas	CPCONLY	H01L2224/32106		168
H01L2224/32111	13	the layer connector being disposed in a recess of the surface	CPCONLY	H01L2224/32111		39
H01L2224/32112	13	the layer connector being at least partially embedded in the surface	CPCONLY	H01L2224/32112		20
H01L2224/32113	13	the whole layer connector protruding from the surface	CPCONLY	H01L2224/32113		23
H01L2224/3213	13	the layer connector connecting within a semiconductor or solid-state body, i.e. connecting two bonding areas on the same semiconductor or solid-state body	CPCONLY	H01L2224/3213		12
H01L2224/32135	13	the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/32135		35
H01L2224/32137	14	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/32137		62
H01L2224/32141	14	the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements	CPCONLY	H01L2224/32141		7
H01L2224/32145	14	the bodies being stacked	CPCONLY	H01L2224/32145		11268
H01L2224/32146	15	the layer connector connecting to a via connection in the semiconductor or solid-state body	CPCONLY	H01L2224/32146		107
H01L2224/32147	15	the layer connector connecting to a bonding area disposed in a recess of the surface	CPCONLY	H01L2224/32147		54
H01L2224/32148	15	the layer connector connecting to a bonding area protruding from the surface	CPCONLY	H01L2224/32148		84
H01L2224/32151	13	the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/32151		31
H01L2224/32153	14	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/32153		2
H01L2224/32155	15	the item being non-metallic, e.g. being an insulating substrate with or without metallisation	CPCONLY	H01L2224/32155		50
H01L2224/32157	16	the layer connector connecting to a bond pad of the item	CPCONLY	H01L2224/32157		21
H01L2224/3216	16	the layer connector connecting to a pin of the item	CPCONLY	H01L2224/3216		
H01L2224/32163	16	the layer connector connecting to a potential ring of the item	CPCONLY	H01L2224/32163		
H01L2224/32165	16	the layer connector connecting to a via metallisation of the item	CPCONLY	H01L2224/32165		7
H01L2224/32167	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32167		1
H01L2224/32168	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32168		2
H01L2224/32175	15	the item being metallic	CPCONLY	H01L2224/32175		24
H01L2224/32183	16	the layer connector connecting to a potential ring of the item	CPCONLY	H01L2224/32183		
H01L2224/32187	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32187		2
H01L2224/32188	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32188		415
H01L2224/32195	15	the item being a discrete passive component	CPCONLY	H01L2224/32195		6
H01L2224/32197	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32197		
H01L2224/32198	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32198		1
H01L2224/32221	14	the body and the item being stacked	CPCONLY	H01L2224/32221		175
H01L2224/32225	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/32225		34573
H01L2224/32227	16	the layer connector connecting to a bond pad of the item	CPCONLY	H01L2224/32227		942
H01L2224/3223	16	the layer connector connecting to a pin of the item	CPCONLY	H01L2224/3223		14
H01L2224/32233	16	the layer connector connecting to a potential ring of the item	CPCONLY	H01L2224/32233		2
H01L2224/32235	16	the layer connector connecting to a via metallisation of the item	CPCONLY	H01L2224/32235		103
H01L2224/32237	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32237		152
H01L2224/32238	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32238		247
H01L2224/3224	16	the layer connector connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/3224		25
H01L2224/32245	15	the item being metallic	CPCONLY	H01L2224/32245		20172
H01L2224/32253	16	the layer connector connecting to a potential ring of the item	CPCONLY	H01L2224/32253		1
H01L2224/32257	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32257		900
H01L2224/32258	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32258		65
H01L2224/3226	16	the layer connector connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/3226		15
H01L2224/32265	15	the item being a discrete passive component	CPCONLY	H01L2224/32265		112
H01L2224/32267	16	the layer connector connecting to a bonding area disposed in a recess of the surface of the item	CPCONLY	H01L2224/32267		2
H01L2224/32268	16	the layer connector connecting to a bonding area protruding from the surface of the item	CPCONLY	H01L2224/32268		10
H01L2224/325	12	Material	CPCONLY	H01L2224/325		90
H01L2224/32501	13	at the bonding interface	CPCONLY	H01L2224/32501		102
H01L2224/32502	14	comprising an eutectic alloy	CPCONLY	H01L2224/32502		40
H01L2224/32503	14	comprising an intermetallic compound	CPCONLY	H01L2224/32503		161
H01L2224/32505	13	outside the bonding interface, e.g. in the bulk of the layer connector	CPCONLY	H01L2224/32505		69
H01L2224/32506	14	comprising an eutectic alloy	CPCONLY	H01L2224/32506		82
H01L2224/32507	14	comprising an intermetallic compound	CPCONLY	H01L2224/32507		117
H01L2224/33	11	of a plurality of layer connectors	CPCONLY	H01L2224/33		554
H01L2224/3301	12	Structure	CPCONLY	H01L2224/3301		21
H01L2224/3303	13	Layer connectors having different sizes, e.g. different heights or widths	CPCONLY	H01L2224/3303		163
H01L2224/3305	12	Shape	CPCONLY	H01L2224/3305		5
H01L2224/33051	13	Layer connectors having different shapes	CPCONLY	H01L2224/33051		50
H01L2224/33055	14	of their bonding interfaces	CPCONLY	H01L2224/33055		13
H01L2224/331	12	Disposition	CPCONLY	H01L2224/331		56
H01L2224/33104	13	relative to the bonding areas, e.g. bond pads	CPCONLY	H01L2224/33104		10
H01L2224/33106	14	the layer connectors being bonded to at least one common bonding area	CPCONLY	H01L2224/33106		11
H01L2224/33107	15	the layer connectors connecting two common bonding areas	CPCONLY	H01L2224/33107		8
H01L2224/3312	13	Layout	CPCONLY	H01L2224/3312		5
H01L2224/3313	14	Square or rectangular array	CPCONLY	H01L2224/3313		9
H01L2224/33132	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/33132		1
H01L2224/33133	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/33133		1
H01L2224/33134	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/33134		3
H01L2224/33135	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/33135		8
H01L2224/3314	14	Circular array, i.e. array with radial symmetry	CPCONLY	H01L2224/3314		2
H01L2224/33142	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/33142		
H01L2224/33143	15	with a staggered arrangement	CPCONLY	H01L2224/33143		
H01L2224/33144	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/33144		
H01L2224/33145	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/33145		1
H01L2224/3315	14	Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry	CPCONLY	H01L2224/3315		21
H01L2224/33151	15	being uniform, i.e. having a uniform pitch across the array	CPCONLY	H01L2224/33151		9
H01L2224/33152	15	being non uniform, i.e. having a non uniform pitch across the array	CPCONLY	H01L2224/33152		2
H01L2224/33153	15	with a staggered arrangement, e.g. depopulated array	CPCONLY	H01L2224/33153		
H01L2224/33154	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/33154		
H01L2224/33155	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/33155		13
H01L2224/33156	16	Covering only the central area of the surface to be connected, i.e. central arrangements	CPCONLY	H01L2224/33156		
H01L2224/3316	14	Random layout, i.e. layout with no symmetry	CPCONLY	H01L2224/3316		11
H01L2224/33163	15	with a staggered arrangement	CPCONLY	H01L2224/33163		
H01L2224/33164	15	covering only portions of the surface to be connected	CPCONLY	H01L2224/33164		3
H01L2224/33165	16	Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements	CPCONLY	H01L2224/33165		1
H01L2224/33177	14	Combinations of arrays with different layouts	CPCONLY	H01L2224/33177		2
H01L2224/33179	14	Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/33179		7
H01L2224/3318	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/3318		4
H01L2224/33181	14	On opposite sides of the body	CPCONLY	H01L2224/33181		2530
H01L2224/33183	14	On contiguous sides of the body	CPCONLY	H01L2224/33183		44
H01L2224/335	12	Material	CPCONLY	H01L2224/335		15
H01L2224/33505	13	Layer connectors having different materials	CPCONLY	H01L2224/33505		117
H01L2224/3351	12	Function	CPCONLY	H01L2224/3351		
H01L2224/33515	13	Layer connectors having different functions	CPCONLY	H01L2224/33515		6
H01L2224/33517	14	including layer connectors providing primarily mechanical support	CPCONLY	H01L2224/33517		22
H01L2224/33519	14	including layer connectors providing primarily thermal dissipation	CPCONLY	H01L2224/33519		28
H01L2224/34	9	Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto	CPCONLY	H01L2224/34		128
H01L2224/35	10	Manufacturing methods	CPCONLY	H01L2224/35		26
H01L2224/35001	11	Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/35001		4
H01L2224/351	11	Pre-treatment of the preform connector	CPCONLY	H01L2224/351		3
H01L2224/3512	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/3512		5
H01L2224/35125	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/35125		5
H01L2224/352	11	Mechanical processes	CPCONLY	H01L2224/352		56
H01L2224/3521	12	Pulling	CPCONLY	H01L2224/3521		3
H01L2224/355	11	Modification of a pre-existing material	CPCONLY	H01L2224/355		11
H01L2224/3551	12	Sintering	CPCONLY	H01L2224/3551		1
H01L2224/3552	12	Anodisation	CPCONLY	H01L2224/3552		
H01L2224/357	11	Involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/357		1
H01L2224/358	11	Post-treatment of the connector	CPCONLY	H01L2224/358		1
H01L2224/3581	12	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/3581		
H01L2224/3582	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/3582		1
H01L2224/35821	13	Spray coating	CPCONLY	H01L2224/35821		1
H01L2224/35822	13	Dip coating	CPCONLY	H01L2224/35822		
H01L2224/35823	13	Immersion coating, e.g. solder bath	CPCONLY	H01L2224/35823		2
H01L2224/35824	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/35824		
H01L2224/35825	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/35825		6
H01L2224/35826	13	Physical vapour deposition [PVD], e.g. evaporation, sputtering	CPCONLY	H01L2224/35826		
H01L2224/35827	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/35827		
H01L2224/3583	12	Reworking	CPCONLY	H01L2224/3583		6
H01L2224/35831	13	with a chemical process, e.g. with etching of the connector	CPCONLY	H01L2224/35831		8
H01L2224/35847	13	with a mechanical process, e.g. with flattening of the connector	CPCONLY	H01L2224/35847		25
H01L2224/35848	12	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/35848		4
H01L2224/35985	11	Methods of manufacturing strap connectors involving a specific sequence of method steps	CPCONLY	H01L2224/35985		5
H01L2224/35986	12	with repetition of the same manufacturing step	CPCONLY	H01L2224/35986		1
H01L2224/36	10	Structure, shape, material or disposition of the strap connectors prior to the connecting process	CPCONLY	H01L2224/36		20
H01L2224/37	11	of an individual strap connector	CPCONLY	H01L2224/37		145
H01L2224/37001	12	Core members of the connector	CPCONLY	H01L2224/37001		1
H01L2224/37005	13	Structure	CPCONLY	H01L2224/37005		43
H01L2224/3701	13	Shape	CPCONLY	H01L2224/3701		117
H01L2224/37011	14	comprising apertures or cavities	CPCONLY	H01L2224/37011		377
H01L2224/37012	14	Cross-sectional shape	CPCONLY	H01L2224/37012		106
H01L2224/37013	15	being non uniform along the connector	CPCONLY	H01L2224/37013		240
H01L2224/3702	13	Disposition	CPCONLY	H01L2224/3702		20
H01L2224/37025	13	Plural core members	CPCONLY	H01L2224/37025		
H01L2224/37026	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/37026		18
H01L2224/37028	14	Side-to-side arrangements	CPCONLY	H01L2224/37028		4
H01L2224/3703	14	Stacked arrangements	CPCONLY	H01L2224/3703		3
H01L2224/37032	15	Two-layer arrangements	CPCONLY	H01L2224/37032		29
H01L2224/37033	15	Three-layer arrangements	CPCONLY	H01L2224/37033		28
H01L2224/37034	15	Four-layer arrangements	CPCONLY	H01L2224/37034		
H01L2224/37099	13	Material	CPCONLY	H01L2224/37099		1050
H01L2224/371	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/371		612
H01L2224/37101	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37101		
H01L2224/37105	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37105		
H01L2224/37109	16	Indium [In] as principal constituent	CPCONLY	H01L2224/37109		1
H01L2224/37111	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37111		18
H01L2224/37113	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37113		2
H01L2224/37114	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37114		
H01L2224/37116	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37116		4
H01L2224/37117	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37117		
H01L2224/37118	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37118		9
H01L2224/3712	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3712		
H01L2224/37123	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37123		1
H01L2224/37124	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37124		546
H01L2224/37138	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37138		5
H01L2224/37139	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37139		93
H01L2224/37144	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/37144		116
H01L2224/37147	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37147		1398
H01L2224/37149	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37149		5
H01L2224/37155	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37155		92
H01L2224/37157	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37157		7
H01L2224/3716	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3716		98
H01L2224/37163	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37163		
H01L2224/37164	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37164		17
H01L2224/37166	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37166		15
H01L2224/37169	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37169		11
H01L2224/3717	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3717		
H01L2224/37171	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37171		3
H01L2224/37172	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37172		1
H01L2224/37173	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37173		
H01L2224/37176	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37176		
H01L2224/37178	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37178		
H01L2224/37179	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37179		2
H01L2224/3718	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3718		28
H01L2224/37181	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37181		2
H01L2224/37183	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37183		
H01L2224/37184	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37184		17
H01L2224/37186	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37186		6
H01L2224/37187	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37187		3
H01L2224/37188	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37188		
H01L2224/3719	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3719		5
H01L2224/37191	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37191		1
H01L2224/37193	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/371&#160;-&#160;H01L2224/37191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37193		5
H01L2224/37194	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/371&#160;-&#160;H01L2224/37191	CPCONLY	H01L2224/37194		1
H01L2224/37195	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/371&#160;-&#160;H01L2224/37191	CPCONLY	H01L2224/37195		
H01L2224/37198	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37198		
H01L2224/37199	15	Material of the matrix	CPCONLY	H01L2224/37199		1
H01L2224/372	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/372		
H01L2224/37201	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37201		
H01L2224/37205	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37205		
H01L2224/37209	18	Indium [In] as principal constituent	CPCONLY	H01L2224/37209		
H01L2224/37211	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37211		3
H01L2224/37213	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37213		
H01L2224/37214	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37214		
H01L2224/37216	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37216		
H01L2224/37217	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37217		
H01L2224/37218	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37218		
H01L2224/3722	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3722		
H01L2224/37223	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37223		
H01L2224/37224	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37224		4
H01L2224/37238	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37238		
H01L2224/37239	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37239		3
H01L2224/37244	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/37244		3
H01L2224/37247	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37247		4
H01L2224/37249	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37249		
H01L2224/37255	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37255		3
H01L2224/37257	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37257		
H01L2224/3726	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3726		
H01L2224/37263	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37263		
H01L2224/37264	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37264		
H01L2224/37266	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37266		3
H01L2224/37269	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37269		
H01L2224/3727	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3727		
H01L2224/37271	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37271		
H01L2224/37272	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37272		
H01L2224/37273	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37273		
H01L2224/37276	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37276		
H01L2224/37278	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37278		
H01L2224/37279	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37279		
H01L2224/3728	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3728		
H01L2224/37281	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37281		
H01L2224/37283	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37283		
H01L2224/37284	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37284		
H01L2224/37286	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37286		
H01L2224/37287	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37287		
H01L2224/37288	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37288		
H01L2224/3729	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3729		6
H01L2224/37291	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37291		
H01L2224/37293	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/372&#160;-&#160;H01L2224/37291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37293		
H01L2224/37294	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/372&#160;-&#160;H01L2224/37291	CPCONLY	H01L2224/37294		
H01L2224/37295	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/372&#160;-&#160;H01L2224/37291	CPCONLY	H01L2224/37295		
H01L2224/37298	15	Fillers	CPCONLY	H01L2224/37298		1
H01L2224/37299	16	Base material	CPCONLY	H01L2224/37299		
H01L2224/373	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/373		2
H01L2224/37301	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37301		
H01L2224/37305	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37305		
H01L2224/37309	19	Indium [In] as principal constituent	CPCONLY	H01L2224/37309		
H01L2224/37311	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37311		
H01L2224/37313	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37313		
H01L2224/37314	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37314		
H01L2224/37316	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37316		
H01L2224/37317	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37317		
H01L2224/37318	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37318		
H01L2224/3732	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3732		
H01L2224/37323	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37323		
H01L2224/37324	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37324		
H01L2224/37338	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37338		
H01L2224/37339	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37339		1
H01L2224/37344	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/37344		
H01L2224/37347	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37347		2
H01L2224/37349	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37349		
H01L2224/37355	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37355		
H01L2224/37357	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37357		
H01L2224/3736	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3736		
H01L2224/37363	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37363		
H01L2224/37364	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37364		
H01L2224/37366	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37366		
H01L2224/37369	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37369		
H01L2224/3737	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3737		
H01L2224/37371	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37371		
H01L2224/37372	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37372		
H01L2224/37373	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37373		
H01L2224/37376	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37376		
H01L2224/37378	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37378		
H01L2224/37379	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37379		
H01L2224/3738	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3738		
H01L2224/37381	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37381		
H01L2224/37383	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37383		
H01L2224/37384	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37384		
H01L2224/37386	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37386		1
H01L2224/37387	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37387		
H01L2224/37388	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37388		
H01L2224/3739	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3739		
H01L2224/37391	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37391		
H01L2224/37393	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/373&#160;-&#160;H01L2224/37391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37393		
H01L2224/37394	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/373&#160;-&#160;H01L2224/37391	CPCONLY	H01L2224/37394		
H01L2224/37395	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/373&#160;-&#160;H01L2224/37391	CPCONLY	H01L2224/37395		3
H01L2224/37398	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37398		
H01L2224/37399	16	Coating material	CPCONLY	H01L2224/37399		
H01L2224/374	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/374		
H01L2224/37401	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37401		
H01L2224/37405	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37405		
H01L2224/37409	19	Indium [In] as principal constituent	CPCONLY	H01L2224/37409		
H01L2224/37411	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37411		
H01L2224/37413	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37413		
H01L2224/37414	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37414		
H01L2224/37416	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37416		
H01L2224/37417	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37417		
H01L2224/37418	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37418		
H01L2224/3742	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3742		
H01L2224/37423	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37423		
H01L2224/37424	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37424		
H01L2224/37438	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37438		
H01L2224/37439	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37439		1
H01L2224/37444	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/37444		1
H01L2224/37447	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37447		
H01L2224/37449	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37449		
H01L2224/37455	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37455		2
H01L2224/37457	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37457		
H01L2224/3746	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3746		
H01L2224/37463	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37463		
H01L2224/37464	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37464		1
H01L2224/37466	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37466		
H01L2224/37469	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37469		
H01L2224/3747	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3747		
H01L2224/37471	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37471		1
H01L2224/37472	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37472		
H01L2224/37473	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37473		
H01L2224/37476	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37476		
H01L2224/37478	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37478		
H01L2224/37479	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37479		
H01L2224/3748	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3748		
H01L2224/37481	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37481		
H01L2224/37483	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37483		
H01L2224/37484	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37484		
H01L2224/37486	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37486		
H01L2224/37487	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37487		
H01L2224/37488	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37488		
H01L2224/3749	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3749		1
H01L2224/37491	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37491		
H01L2224/37493	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/374&#160;-&#160;H01L2224/37491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37493		
H01L2224/37494	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/374&#160;-&#160;H01L2224/37491	CPCONLY	H01L2224/37494		
H01L2224/37495	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/374&#160;-&#160;H01L2224/37491	CPCONLY	H01L2224/37495		
H01L2224/37498	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37498		
H01L2224/37499	16	Shape or distribution of the fillers	CPCONLY	H01L2224/37499		1
H01L2224/3754	12	Coating	CPCONLY	H01L2224/3754		146
H01L2224/37541	13	Structure	CPCONLY	H01L2224/37541		2
H01L2224/3755	13	Shape	CPCONLY	H01L2224/3755		3
H01L2224/3756	13	Disposition, e.g. coating on a part of the core	CPCONLY	H01L2224/3756		23
H01L2224/37565	13	Single coating layer	CPCONLY	H01L2224/37565		14
H01L2224/3757	13	Plural coating layers	CPCONLY	H01L2224/3757		2
H01L2224/37572	14	Two-layer stack coating	CPCONLY	H01L2224/37572		7
H01L2224/37573	14	Three-layer stack coating	CPCONLY	H01L2224/37573		
H01L2224/37574	14	Four-layer stack coating	CPCONLY	H01L2224/37574		
H01L2224/37576	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/37576		
H01L2224/37578	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/37578		1
H01L2224/37599	13	Material	CPCONLY	H01L2224/37599		592
H01L2224/376	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/376		92
H01L2224/37601	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37601		
H01L2224/37605	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37605		
H01L2224/37609	16	Indium [In] as principal constituent	CPCONLY	H01L2224/37609		
H01L2224/37611	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37611		15
H01L2224/37613	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37613		
H01L2224/37614	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37614		
H01L2224/37616	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37616		1
H01L2224/37617	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37617		
H01L2224/37618	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37618		3
H01L2224/3762	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3762		
H01L2224/37623	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37623		
H01L2224/37624	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37624		10
H01L2224/37638	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37638		3
H01L2224/37639	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37639		46
H01L2224/37644	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/37644		41
H01L2224/37647	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37647		21
H01L2224/37649	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37649		
H01L2224/37655	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37655		63
H01L2224/37657	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37657		
H01L2224/3766	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3766		2
H01L2224/37663	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37663		3
H01L2224/37664	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37664		15
H01L2224/37666	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37666		8
H01L2224/37669	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37669		4
H01L2224/3767	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3767		
H01L2224/37671	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37671		5
H01L2224/37672	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37672		
H01L2224/37673	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37673		
H01L2224/37676	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37676		
H01L2224/37678	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37678		
H01L2224/37679	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37679		
H01L2224/3768	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3768		
H01L2224/37681	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37681		
H01L2224/37683	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37683		
H01L2224/37684	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37684		
H01L2224/37686	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37686		7
H01L2224/37687	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37687		1
H01L2224/37688	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37688		
H01L2224/3769	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3769		11
H01L2224/37691	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37691		
H01L2224/37693	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/376&#160;-&#160;H01L2224/37691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37693		1
H01L2224/37694	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/376&#160;-&#160;H01L2224/37691	CPCONLY	H01L2224/37694		
H01L2224/37695	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/376&#160;-&#160;H01L2224/37691	CPCONLY	H01L2224/37695		
H01L2224/37698	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37698		
H01L2224/37699	15	Material of the matrix	CPCONLY	H01L2224/37699		
H01L2224/377	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/377		
H01L2224/37701	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37701		
H01L2224/37705	18	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37705		
H01L2224/37709	18	Indium [In] as principal constituent	CPCONLY	H01L2224/37709		
H01L2224/37711	18	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37711		
H01L2224/37713	18	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37713		
H01L2224/37714	18	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37714		
H01L2224/37716	18	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37716		
H01L2224/37717	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37717		
H01L2224/37718	18	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37718		
H01L2224/3772	18	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3772		
H01L2224/37723	18	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37723		
H01L2224/37724	18	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37724		
H01L2224/37738	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37738		
H01L2224/37739	18	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37739		
H01L2224/37744	18	Gold [Au] as principal constituent	CPCONLY	H01L2224/37744		
H01L2224/37747	18	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37747		
H01L2224/37749	18	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37749		
H01L2224/37755	18	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37755		1
H01L2224/37757	18	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37757		
H01L2224/3776	18	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3776		
H01L2224/37763	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37763		
H01L2224/37764	18	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37764		
H01L2224/37766	18	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37766		
H01L2224/37769	18	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37769		
H01L2224/3777	18	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3777		
H01L2224/37771	18	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37771		
H01L2224/37772	18	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37772		
H01L2224/37773	18	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37773		
H01L2224/37776	18	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37776		
H01L2224/37778	18	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37778		
H01L2224/37779	18	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37779		
H01L2224/3778	18	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3778		
H01L2224/37781	18	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37781		
H01L2224/37783	18	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37783		
H01L2224/37784	18	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37784		
H01L2224/37786	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37786		
H01L2224/37787	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37787		
H01L2224/37788	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37788		
H01L2224/3779	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3779		
H01L2224/37791	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37791		
H01L2224/37793	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/377&#160;-&#160;H01L2224/37791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37793		
H01L2224/37794	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/377&#160;-&#160;H01L2224/37791	CPCONLY	H01L2224/37794		
H01L2224/37795	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/377&#160;-&#160;H01L2224/37791	CPCONLY	H01L2224/37795		
H01L2224/37798	15	Fillers	CPCONLY	H01L2224/37798		
H01L2224/37799	16	Base material	CPCONLY	H01L2224/37799		
H01L2224/378	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/378		
H01L2224/37801	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37801		
H01L2224/37805	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37805		
H01L2224/37809	19	Indium [In] as principal constituent	CPCONLY	H01L2224/37809		
H01L2224/37811	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37811		
H01L2224/37813	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37813		
H01L2224/37814	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37814		
H01L2224/37816	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37816		
H01L2224/37817	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37817		
H01L2224/37818	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37818		
H01L2224/3782	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3782		
H01L2224/37823	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37823		
H01L2224/37824	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37824		
H01L2224/37838	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37838		
H01L2224/37839	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37839		
H01L2224/37844	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/37844		
H01L2224/37847	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37847		
H01L2224/37849	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37849		
H01L2224/37855	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37855		
H01L2224/37857	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37857		
H01L2224/3786	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3786		
H01L2224/37863	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37863		
H01L2224/37864	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37864		
H01L2224/37866	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37866		
H01L2224/37869	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37869		
H01L2224/3787	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3787		
H01L2224/37871	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37871		
H01L2224/37872	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37872		
H01L2224/37873	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37873		
H01L2224/37876	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37876		
H01L2224/37878	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37878		
H01L2224/37879	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37879		
H01L2224/3788	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3788		
H01L2224/37881	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37881		
H01L2224/37883	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37883		
H01L2224/37884	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37884		
H01L2224/37886	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37886		
H01L2224/37887	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37887		
H01L2224/37888	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37888		
H01L2224/3789	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3789		
H01L2224/37891	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37891		
H01L2224/37893	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/378&#160;-&#160;H01L2224/37891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37893		1
H01L2224/37894	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/378&#160;-&#160;H01L2224/37891	CPCONLY	H01L2224/37894		
H01L2224/37895	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/378&#160;-&#160;H01L2224/37891	CPCONLY	H01L2224/37895		1
H01L2224/37898	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37898		
H01L2224/37899	16	Coating material	CPCONLY	H01L2224/37899		
H01L2224/379	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/379		
H01L2224/37901	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/37901		
H01L2224/37905	19	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/37905		
H01L2224/37909	19	Indium [In] as principal constituent	CPCONLY	H01L2224/37909		
H01L2224/37911	19	Tin [Sn] as principal constituent	CPCONLY	H01L2224/37911		
H01L2224/37913	19	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/37913		
H01L2224/37914	19	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/37914		
H01L2224/37916	19	Lead [Pb] as principal constituent	CPCONLY	H01L2224/37916		
H01L2224/37917	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/37917		
H01L2224/37918	19	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/37918		
H01L2224/3792	19	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/3792		
H01L2224/37923	19	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/37923		
H01L2224/37924	19	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/37924		
H01L2224/37938	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/37938		
H01L2224/37939	19	Silver [Ag] as principal constituent	CPCONLY	H01L2224/37939		
H01L2224/37944	19	Gold [Au] as principal constituent	CPCONLY	H01L2224/37944		
H01L2224/37947	19	Copper [Cu] as principal constituent	CPCONLY	H01L2224/37947		
H01L2224/37949	19	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/37949		
H01L2224/37955	19	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/37955		
H01L2224/37957	19	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/37957		
H01L2224/3796	19	Iron [Fe] as principal constituent	CPCONLY	H01L2224/3796		
H01L2224/37963	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/37963		
H01L2224/37964	19	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/37964		
H01L2224/37966	19	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/37966		
H01L2224/37969	19	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/37969		
H01L2224/3797	19	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/3797		
H01L2224/37971	19	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/37971		
H01L2224/37972	19	Vanadium [V] as principal constituent	CPCONLY	H01L2224/37972		
H01L2224/37973	19	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/37973		
H01L2224/37976	19	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/37976		
H01L2224/37978	19	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/37978		
H01L2224/37979	19	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/37979		
H01L2224/3798	19	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/3798		
H01L2224/37981	19	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/37981		
H01L2224/37983	19	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/37983		
H01L2224/37984	19	Tungsten [W] as principal constituent	CPCONLY	H01L2224/37984		
H01L2224/37986	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/37986		1
H01L2224/37987	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/37987		
H01L2224/37988	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/37988		
H01L2224/3799	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/3799		
H01L2224/37991	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/37991		
H01L2224/37993	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/379&#160;-&#160;H01L2224/37991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/37993		1
H01L2224/37994	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/379&#160;-&#160;H01L2224/37991	CPCONLY	H01L2224/37994		
H01L2224/37995	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/379&#160;-&#160;H01L2224/37991	CPCONLY	H01L2224/37995		
H01L2224/37998	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/37998		
H01L2224/37999	16	Shape or distribution of the fillers	CPCONLY	H01L2224/37999		
H01L2224/38	11	of a plurality of strap connectors	CPCONLY	H01L2224/38		60
H01L2224/39	10	Structure, shape, material or disposition of the strap connectors after the connecting process	CPCONLY	H01L2224/39		23
H01L2224/40	11	of an individual strap connector	CPCONLY	H01L2224/40		997
H01L2224/4001	12	Structure	CPCONLY	H01L2224/4001		24
H01L2224/4005	12	Shape	CPCONLY	H01L2224/4005		45
H01L2224/4007	13	of bonding interfaces, e.g. interlocking features	CPCONLY	H01L2224/4007		188
H01L2224/4009	13	Loop shape	CPCONLY	H01L2224/4009		10
H01L2224/40091	14	Arched	CPCONLY	H01L2224/40091		223
H01L2224/40095	14	Kinked	CPCONLY	H01L2224/40095		930
H01L2224/401	12	Disposition	CPCONLY	H01L2224/401		7
H01L2224/40101	13	Connecting bonding areas at the same height, e.g. horizontal bond	CPCONLY	H01L2224/40101		37
H01L2224/40105	13	Connecting bonding areas at different heights	CPCONLY	H01L2224/40105		45
H01L2224/40106	14	the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout	CPCONLY	H01L2224/40106		49
H01L2224/40108	14	the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout	CPCONLY	H01L2224/40108		6
H01L2224/40111	14	the strap connector extending above another semiconductor or solid-state body	CPCONLY	H01L2224/40111		8
H01L2224/4013	13	Connecting within a semiconductor or solid-state body, i.e. fly strap, bridge strap	CPCONLY	H01L2224/4013		11
H01L2224/40132	14	with an intermediate bond, e.g. continuous strap daisy chain	CPCONLY	H01L2224/40132		11
H01L2224/40135	13	Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/40135		7
H01L2224/40137	14	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/40137		1005
H01L2224/40139	15	with an intermediate bond, e.g. continuous strap daisy chain	CPCONLY	H01L2224/40139		354
H01L2224/40141	14	the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements	CPCONLY	H01L2224/40141		1
H01L2224/40145	14	the bodies being stacked	CPCONLY	H01L2224/40145		35
H01L2224/40147	15	with an intermediate bond, e.g. continuous strap daisy chain	CPCONLY	H01L2224/40147		5
H01L2224/40151	13	Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/40151		17
H01L2224/40153	14	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/40153		4
H01L2224/40155	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/40155		20
H01L2224/40157	16	Connecting the strap to a bond pad of the item	CPCONLY	H01L2224/40157		10
H01L2224/40158	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/40158		
H01L2224/40159	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/40159		4
H01L2224/4016	16	Connecting the strap to a pin of the item	CPCONLY	H01L2224/4016		
H01L2224/40163	16	Connecting the strap to a potential ring of the item	CPCONLY	H01L2224/40163		
H01L2224/40165	16	Connecting the strap to a via metallisation of the item	CPCONLY	H01L2224/40165		1
H01L2224/40175	15	the item being metallic	CPCONLY	H01L2224/40175		72
H01L2224/40177	16	Connecting the strap to a bond pad of the item	CPCONLY	H01L2224/40177		13
H01L2224/40178	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/40178		
H01L2224/40179	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/40179		5
H01L2224/40183	16	Connecting the strap to a potential ring of the item	CPCONLY	H01L2224/40183		
H01L2224/40195	15	the item being a discrete passive component	CPCONLY	H01L2224/40195		17
H01L2224/40221	14	the body and the item being stacked	CPCONLY	H01L2224/40221		9
H01L2224/40225	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/40225		888
H01L2224/40227	16	Connecting the strap to a bond pad of the item	CPCONLY	H01L2224/40227		243
H01L2224/40228	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/40228		3
H01L2224/40229	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/40229		38
H01L2224/4023	16	Connecting the strap to a pin of the item	CPCONLY	H01L2224/4023		5
H01L2224/40233	16	Connecting the strap to a potential ring of the item	CPCONLY	H01L2224/40233		
H01L2224/40235	16	Connecting the strap to a via metallisation of the item	CPCONLY	H01L2224/40235		2
H01L2224/40237	16	Connecting the strap to a die pad of the item	CPCONLY	H01L2224/40237		6
H01L2224/4024	16	Connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/4024		6
H01L2224/40245	15	the item being metallic	CPCONLY	H01L2224/40245		2110
H01L2224/40247	16	Connecting the strap to a bond pad of the item	CPCONLY	H01L2224/40247		426
H01L2224/40248	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/40248		7
H01L2224/40249	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/40249		63
H01L2224/40253	16	Connecting the strap to a potential ring of the item	CPCONLY	H01L2224/40253		
H01L2224/40257	16	Connecting the strap to a die pad of the item	CPCONLY	H01L2224/40257		12
H01L2224/4026	16	Connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/4026		3
H01L2224/40265	15	the item being a discrete passive component	CPCONLY	H01L2224/40265		3
H01L2224/404	12	Connecting portions	CPCONLY	H01L2224/404		17
H01L2224/4046	13	with multiple bonds on the same bonding area	CPCONLY	H01L2224/4046		11
H01L2224/40475	13	connected to auxiliary connecting means on the bonding areas	CPCONLY	H01L2224/40475		48
H01L2224/40477	14	being a pre-ball (i.e. a ball formed by capillary bonding)	CPCONLY	H01L2224/40477		2
H01L2224/40479	15	on the semiconductor or solid-state body	CPCONLY	H01L2224/40479		13
H01L2224/4048	15	outside the semiconductor or solid-state body	CPCONLY	H01L2224/4048		4
H01L2224/40484	15	being a plurality of pre-balls disposed side-to-side	CPCONLY	H01L2224/40484		
H01L2224/40486	16	on the semiconductor or solid-state body	CPCONLY	H01L2224/40486		
H01L2224/40487	16	outside the semiconductor or solid-state body	CPCONLY	H01L2224/40487		
H01L2224/40491	14	being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad	CPCONLY	H01L2224/40491		97
H01L2224/40496	14	not being interposed between the connector and the bonding area	CPCONLY	H01L2224/40496		4
H01L2224/40499	14	Material of the auxiliary connecting means	CPCONLY	H01L2224/40499		293
H01L2224/405	12	Material	CPCONLY	H01L2224/405		5
H01L2224/40505	13	at the bonding interface	CPCONLY	H01L2224/40505		3
H01L2224/40506	14	comprising an eutectic alloy	CPCONLY	H01L2224/40506		
H01L2224/40507	14	comprising an intermetallic compound	CPCONLY	H01L2224/40507		8
H01L2224/4051	14	Morphology of the connecting portion, e.g. grain size distribution	CPCONLY	H01L2224/4051		5
H01L2224/4052	14	Bonding interface between the connecting portion and the bonding area	CPCONLY	H01L2224/4052		3
H01L2224/4099	12	Auxiliary members for strap connectors, e.g. flow-barriers, spacers	CPCONLY	H01L2224/4099		13
H01L2224/40991	13	being formed on the semiconductor or solid-state body to be connected	CPCONLY	H01L2224/40991		15
H01L2224/40992	14	Reinforcing structures	CPCONLY	H01L2224/40992		4
H01L2224/40993	14	Alignment aids	CPCONLY	H01L2224/40993		10
H01L2224/40996	13	being formed on an item to be connected not being a semiconductor or solid-state body	CPCONLY	H01L2224/40996		6
H01L2224/40997	14	Reinforcing structures	CPCONLY	H01L2224/40997		4
H01L2224/40998	14	Alignment aids	CPCONLY	H01L2224/40998		5
H01L2224/41	11	of a plurality of strap connectors	CPCONLY	H01L2224/41		72
H01L2224/4101	12	Structure	CPCONLY	H01L2224/4101		1
H01L2224/4103	13	Connectors having different sizes	CPCONLY	H01L2224/4103		244
H01L2224/4105	12	Shape	CPCONLY	H01L2224/4105		2
H01L2224/41051	13	Connectors having different shapes	CPCONLY	H01L2224/41051		40
H01L2224/41052	14	Different loop heights	CPCONLY	H01L2224/41052		10
H01L2224/411	12	Disposition	CPCONLY	H01L2224/411		5
H01L2224/41105	13	Connecting at different heights	CPCONLY	H01L2224/41105		2
H01L2224/41107	14	on the semiconductor or solid-state body being	CPCONLY	H01L2224/41107		1
H01L2224/41109	14	outside the semiconductor or solid-state body	CPCONLY	H01L2224/41109		5
H01L2224/4111	13	the connectors being bonded to at least one common bonding area, e.g. daisy chain	CPCONLY	H01L2224/4111		4
H01L2224/41111	14	the connectors connecting two common bonding areas	CPCONLY	H01L2224/41111		7
H01L2224/41112	14	the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging straps	CPCONLY	H01L2224/41112		3
H01L2224/41113	14	the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging straps	CPCONLY	H01L2224/41113		23
H01L2224/4112	13	Layout	CPCONLY	H01L2224/4112		13
H01L2224/4117	14	Crossed straps	CPCONLY	H01L2224/4117		4
H01L2224/41171	14	Fan-out arrangements	CPCONLY	H01L2224/41171		7
H01L2224/41173	15	Radial fan-out arrangements	CPCONLY	H01L2224/41173		3
H01L2224/41174	14	Stacked arrangements	CPCONLY	H01L2224/41174		11
H01L2224/41175	14	Parallel arrangements	CPCONLY	H01L2224/41175		38
H01L2224/41176	15	Strap connectors having the same loop shape and height	CPCONLY	H01L2224/41176		11
H01L2224/41177	14	Combinations of different arrangements	CPCONLY	H01L2224/41177		2
H01L2224/41179	14	Corner adaptations, i.e. disposition of the strap connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/41179		1
H01L2224/4118	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/4118		29
H01L2224/414	12	Connecting portions	CPCONLY	H01L2224/414		1
H01L2224/4141	13	the connecting portions being stacked	CPCONLY	H01L2224/4141		1
H01L2224/41421	14	on the semiconductor or solid-state body	CPCONLY	H01L2224/41421		1
H01L2224/41422	14	outside the semiconductor or solid-state body	CPCONLY	H01L2224/41422		2
H01L2224/4143	13	the connecting portions being staggered	CPCONLY	H01L2224/4143		
H01L2224/415	12	Material	CPCONLY	H01L2224/415		
H01L2224/41505	13	Connectors having different materials	CPCONLY	H01L2224/41505		1
H01L2224/42	9	Wire connectors; Manufacturing methods related thereto	CPCONLY	H01L2224/42		53
H01L2224/43	10	Manufacturing methods	CPCONLY	H01L2224/43		931
H01L2224/43001	11	Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/43001		7
H01L2224/431	11	Pre-treatment of the preform connector	CPCONLY	H01L2224/431		26
H01L2224/4312	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/4312		82
H01L2224/43125	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/43125		43
H01L2224/432	11	Mechanical processes	CPCONLY	H01L2224/432		54
H01L2224/4321	12	Pulling	CPCONLY	H01L2224/4321		354
H01L2224/435	11	Modification of a pre-existing material	CPCONLY	H01L2224/435		21
H01L2224/4351	12	Sintering	CPCONLY	H01L2224/4351		6
H01L2224/4352	12	Anodisation	CPCONLY	H01L2224/4352		1
H01L2224/437	11	Involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/437		12
H01L2224/438	11	Post-treatment of the connector	CPCONLY	H01L2224/438		4
H01L2224/4381	12	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/4381		21
H01L2224/4382	12	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/4382		29
H01L2224/43821	13	Spray coating	CPCONLY	H01L2224/43821		8
H01L2224/43822	13	Dip coating	CPCONLY	H01L2224/43822		16
H01L2224/43823	13	Immersion coating, e.g. solder bath	CPCONLY	H01L2224/43823		4
H01L2224/43824	13	Chemical solution deposition [CSD], i.e. using a liquid precursor	CPCONLY	H01L2224/43824		2
H01L2224/43825	13	Plating, e.g. electroplating, electroless plating	CPCONLY	H01L2224/43825		86
H01L2224/43826	13	Physical vapour deposition [PVD], e.g. evaporation, sputtering	CPCONLY	H01L2224/43826		41
H01L2224/43827	13	Chemical vapour deposition [CVD], e.g. laser CVD	CPCONLY	H01L2224/43827		40
H01L2224/4383	12	Reworking	CPCONLY	H01L2224/4383		4
H01L2224/43831	13	with a chemical process, e.g. with etching of the connector	CPCONLY	H01L2224/43831		4
H01L2224/43847	13	with a mechanical process, e.g. with flattening of the connector	CPCONLY	H01L2224/43847		31
H01L2224/43848	12	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/43848		904
H01L2224/43985	11	Methods of manufacturing wire connectors involving a specific sequence of method steps	CPCONLY	H01L2224/43985		30
H01L2224/43986	12	with repetition of the same manufacturing step	CPCONLY	H01L2224/43986		34
H01L2224/44	10	Structure, shape, material or disposition of the wire connectors prior to the connecting process	CPCONLY	H01L2224/44		17
H01L2224/45	11	of an individual wire connector	CPCONLY	H01L2224/45		4120
H01L2224/45001	12	Core members of the connector	CPCONLY	H01L2224/45001		1
H01L2224/45005	13	Structure	CPCONLY	H01L2224/45005		51
H01L2224/4501	13	Shape	CPCONLY	H01L2224/4501		26
H01L2224/45012	14	Cross-sectional shape	CPCONLY	H01L2224/45012		75
H01L2224/45013	15	being non uniform along the connector	CPCONLY	H01L2224/45013		51
H01L2224/45014	15	Ribbon connectors, e.g. rectangular cross-section	CPCONLY	H01L2224/45014		1425
H01L2224/45015	15	being circular	CPCONLY	H01L2224/45015		12746
H01L2224/45016	15	being elliptic	CPCONLY	H01L2224/45016		40
H01L2224/4502	13	Disposition	CPCONLY	H01L2224/4502		78
H01L2224/45025	13	Plural core members	CPCONLY	H01L2224/45025		9
H01L2224/45026	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/45026		4
H01L2224/45028	14	Side-to-side arrangements	CPCONLY	H01L2224/45028		22
H01L2224/4503	14	Stacked arrangements	CPCONLY	H01L2224/4503		7
H01L2224/45032	15	Two-layer arrangements	CPCONLY	H01L2224/45032		45
H01L2224/45033	15	Three-layer arrangements	CPCONLY	H01L2224/45033		25
H01L2224/45034	15	Four-layer arrangements	CPCONLY	H01L2224/45034		3
H01L2224/45099	13	Material	CPCONLY	H01L2224/45099		15835
H01L2224/451	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/451		2066
H01L2224/45101	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45101		17
H01L2224/45105	16	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45105		30
H01L2224/45109	16	Indium (In) as principal constituent	CPCONLY	H01L2224/45109		35
H01L2224/45111	16	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45111		101
H01L2224/45113	16	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45113		10
H01L2224/45114	16	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45114		3
H01L2224/45116	16	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45116		34
H01L2224/45117	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45117		9
H01L2224/45118	16	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45118		19
H01L2224/4512	16	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4512		12
H01L2224/45123	16	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45123		17
H01L2224/45124	16	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45124		8586
H01L2224/45138	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45138		31
H01L2224/45139	16	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45139		2160
H01L2224/45144	16	Gold (Au) as principal constituent	CPCONLY	H01L2224/45144		21287
H01L2224/45147	16	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45147		6161
H01L2224/45149	16	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45149		9
H01L2224/45155	16	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45155		223
H01L2224/45157	16	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45157		29
H01L2224/4516	16	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4516		97
H01L2224/45163	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45163		14
H01L2224/45164	16	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45164		316
H01L2224/45166	16	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45166		44
H01L2224/45169	16	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45169		303
H01L2224/4517	16	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4517		5
H01L2224/45171	16	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45171		29
H01L2224/45172	16	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45172		4
H01L2224/45173	16	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45173		30
H01L2224/45176	16	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45176		10
H01L2224/45178	16	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45178		19
H01L2224/45179	16	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45179		8
H01L2224/4518	16	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4518		21
H01L2224/45181	16	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45181		11
H01L2224/45183	16	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45183		3
H01L2224/45184	16	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45184		63
H01L2224/45186	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45186		14
H01L2224/45187	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45187		7
H01L2224/45188	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45188		3
H01L2224/4519	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4519		16
H01L2224/45191	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45191		1
H01L2224/45193	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/451&#160;-&#160;H01L2224/45191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45193		20
H01L2224/45194	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/451&#160;-&#160;H01L2224/45191	CPCONLY	H01L2224/45194		1
H01L2224/45195	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/451&#160;-&#160;H01L2224/45191	CPCONLY	H01L2224/45195		10
H01L2224/45198	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45198		10
H01L2224/45199	15	Material of the matrix	CPCONLY	H01L2224/45199		1
H01L2224/452	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/452		
H01L2224/45201	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45201		
H01L2224/45205	18	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45205		
H01L2224/45209	18	Indium (In) as principal constituent	CPCONLY	H01L2224/45209		
H01L2224/45211	18	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45211		
H01L2224/45213	18	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45213		
H01L2224/45214	18	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45214		
H01L2224/45216	18	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45216		
H01L2224/45217	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45217		
H01L2224/45218	18	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45218		1
H01L2224/4522	18	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4522		
H01L2224/45223	18	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45223		1
H01L2224/45224	18	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45224		7
H01L2224/45238	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45238		1
H01L2224/45239	18	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45239		6
H01L2224/45244	18	Gold (Au) as principal constituent	CPCONLY	H01L2224/45244		8
H01L2224/45247	18	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45247		9
H01L2224/45249	18	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45249		
H01L2224/45255	18	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45255		2
H01L2224/45257	18	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45257		
H01L2224/4526	18	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4526		1
H01L2224/45263	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45263		
H01L2224/45264	18	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45264		2
H01L2224/45266	18	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45266		
H01L2224/45269	18	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45269		2
H01L2224/4527	18	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4527		
H01L2224/45271	18	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45271		1
H01L2224/45272	18	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45272		1
H01L2224/45273	18	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45273		1
H01L2224/45276	18	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45276		1
H01L2224/45278	18	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45278		1
H01L2224/45279	18	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45279		
H01L2224/4528	18	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4528		1
H01L2224/45281	18	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45281		1
H01L2224/45283	18	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45283		
H01L2224/45284	18	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45284		1
H01L2224/45286	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45286		
H01L2224/45287	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45287		
H01L2224/45288	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45288		
H01L2224/4529	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4529		1
H01L2224/45291	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45291		2
H01L2224/45293	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/452&#160;-&#160;H01L2224/45291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45293		
H01L2224/45294	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/452&#160;-&#160;H01L2224/45291	CPCONLY	H01L2224/45294		1
H01L2224/45295	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/452&#160;-&#160;H01L2224/45291	CPCONLY	H01L2224/45295		
H01L2224/45298	15	Fillers	CPCONLY	H01L2224/45298		
H01L2224/45299	16	Base material	CPCONLY	H01L2224/45299		
H01L2224/453	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/453		6
H01L2224/45301	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45301		1
H01L2224/45305	19	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45305		
H01L2224/45309	19	Indium (In) as principal constituent	CPCONLY	H01L2224/45309		
H01L2224/45311	19	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45311		
H01L2224/45313	19	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45313		
H01L2224/45314	19	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45314		
H01L2224/45316	19	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45316		1
H01L2224/45317	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45317		
H01L2224/45318	19	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45318		
H01L2224/4532	19	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4532		
H01L2224/45323	19	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45323		
H01L2224/45324	19	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45324		3
H01L2224/45338	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45338		1
H01L2224/45339	19	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45339		2
H01L2224/45344	19	Gold (Au) as principal constituent	CPCONLY	H01L2224/45344		3
H01L2224/45347	19	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45347		3
H01L2224/45349	19	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45349		
H01L2224/45355	19	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45355		2
H01L2224/45357	19	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45357		
H01L2224/4536	19	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4536		1
H01L2224/45363	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45363		2
H01L2224/45364	19	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45364		3
H01L2224/45366	19	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45366		
H01L2224/45369	19	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45369		1
H01L2224/4537	19	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4537		
H01L2224/45371	19	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45371		
H01L2224/45372	19	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45372		
H01L2224/45373	19	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45373		
H01L2224/45376	19	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45376		1
H01L2224/45378	19	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45378		
H01L2224/45379	19	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45379		
H01L2224/4538	19	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4538		1
H01L2224/45381	19	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45381		
H01L2224/45383	19	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45383		
H01L2224/45384	19	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45384		1
H01L2224/45386	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45386		9
H01L2224/45387	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45387		5
H01L2224/45388	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45388		1
H01L2224/4539	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4539		1
H01L2224/45391	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45391		
H01L2224/45393	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/453&#160;-&#160;H01L2224/45391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45393		7
H01L2224/45394	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/453&#160;-&#160;H01L2224/45391	CPCONLY	H01L2224/45394		
H01L2224/45395	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/453&#160;-&#160;H01L2224/45391	CPCONLY	H01L2224/45395		2
H01L2224/45398	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45398		
H01L2224/45399	16	Coating material	CPCONLY	H01L2224/45399		1
H01L2224/454	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/454		3
H01L2224/45401	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45401		
H01L2224/45405	19	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45405		
H01L2224/45409	19	Indium (In) as principal constituent	CPCONLY	H01L2224/45409		
H01L2224/45411	19	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45411		1
H01L2224/45413	19	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45413		
H01L2224/45414	19	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45414		
H01L2224/45416	19	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45416		
H01L2224/45417	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45417		1
H01L2224/45418	19	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45418		
H01L2224/4542	19	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4542		
H01L2224/45423	19	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45423		
H01L2224/45424	19	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45424		3
H01L2224/45438	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45438		
H01L2224/45439	19	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45439		
H01L2224/45444	19	Gold (Au) as principal constituent	CPCONLY	H01L2224/45444		6
H01L2224/45447	19	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45447		2
H01L2224/45449	19	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45449		
H01L2224/45455	19	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45455		
H01L2224/45457	19	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45457		
H01L2224/4546	19	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4546		
H01L2224/45463	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45463		
H01L2224/45464	19	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45464		8
H01L2224/45466	19	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45466		
H01L2224/45469	19	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45469		1
H01L2224/4547	19	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4547		2
H01L2224/45471	19	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45471		
H01L2224/45472	19	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45472		1
H01L2224/45473	19	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45473		
H01L2224/45476	19	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45476		
H01L2224/45478	19	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45478		
H01L2224/45479	19	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45479		
H01L2224/4548	19	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4548		
H01L2224/45481	19	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45481		
H01L2224/45483	19	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45483		
H01L2224/45484	19	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45484		
H01L2224/45486	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45486		
H01L2224/45487	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45487		
H01L2224/45488	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45488		
H01L2224/4549	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4549		1
H01L2224/45491	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45491		
H01L2224/45493	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/454&#160;-&#160;H01L2224/45491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45493		
H01L2224/45494	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/454&#160;-&#160;H01L2224/45491	CPCONLY	H01L2224/45494		
H01L2224/45495	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/454&#160;-&#160;H01L2224/45491	CPCONLY	H01L2224/45495		
H01L2224/45498	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45498		
H01L2224/45499	15	Shape or distribution of the fillers	CPCONLY	H01L2224/45499		1
H01L2224/4554	12	Coating	CPCONLY	H01L2224/4554		864
H01L2224/45541	13	Structure	CPCONLY	H01L2224/45541		21
H01L2224/4555	13	Shape	CPCONLY	H01L2224/4555		10
H01L2224/4556	13	Disposition, e.g. coating on a part of the core	CPCONLY	H01L2224/4556		139
H01L2224/45565	13	Single coating layer	CPCONLY	H01L2224/45565		1304
H01L2224/4557	13	Plural coating layers	CPCONLY	H01L2224/4557		10
H01L2224/45572	14	Two-layer stack coating	CPCONLY	H01L2224/45572		267
H01L2224/45573	14	Three-layer stack coating	CPCONLY	H01L2224/45573		45
H01L2224/45574	14	Four-layer stack coating	CPCONLY	H01L2224/45574		8
H01L2224/45576	14	being mutually engaged together, e.g. through inserts	CPCONLY	H01L2224/45576		
H01L2224/45578	14	being disposed next to each other, e.g. side-to-side arrangements	CPCONLY	H01L2224/45578		2
H01L2224/45599	13	Material	CPCONLY	H01L2224/45599		199
H01L2224/456	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/456		124
H01L2224/45601	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45601		13
H01L2224/45605	16	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45605		4
H01L2224/45609	16	Indium (In) as principal constituent	CPCONLY	H01L2224/45609		17
H01L2224/45611	16	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45611		60
H01L2224/45613	16	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45613		3
H01L2224/45614	16	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45614		
H01L2224/45616	16	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45616		16
H01L2224/45617	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45617		5
H01L2224/45618	16	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45618		36
H01L2224/4562	16	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4562		4
H01L2224/45623	16	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45623		15
H01L2224/45624	16	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45624		149
H01L2224/45638	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45638		10
H01L2224/45639	16	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45639		221
H01L2224/45644	16	Gold (Au) as principal constituent	CPCONLY	H01L2224/45644		537
H01L2224/45647	16	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45647		140
H01L2224/45649	16	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45649		4
H01L2224/45655	16	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45655		181
H01L2224/45657	16	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45657		41
H01L2224/4566	16	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4566		22
H01L2224/45663	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45663		14
H01L2224/45664	16	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45664		478
H01L2224/45666	16	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45666		48
H01L2224/45669	16	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45669		194
H01L2224/4567	16	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4567		12
H01L2224/45671	16	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45671		44
H01L2224/45672	16	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45672		3
H01L2224/45673	16	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45673		50
H01L2224/45676	16	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45676		26
H01L2224/45678	16	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45678		15
H01L2224/45679	16	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45679		5
H01L2224/4568	16	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4568		11
H01L2224/45681	16	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45681		6
H01L2224/45683	16	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45683		4
H01L2224/45684	16	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45684		20
H01L2224/45686	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45686		88
H01L2224/45687	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45687		19
H01L2224/45688	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45688		12
H01L2224/4569	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4569		321
H01L2224/45691	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45691		10
H01L2224/45693	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/456&#160;-&#160;H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45693		34
H01L2224/45694	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/456&#160;-&#160;H01L2224/45691	CPCONLY	H01L2224/45694		11
H01L2224/45695	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/456&#160;-&#160;H01L2224/45691	CPCONLY	H01L2224/45695		1
H01L2224/45698	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45698		4
H01L2224/45699	15	Material of the matrix	CPCONLY	H01L2224/45699		1
H01L2224/457	16	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/457		
H01L2224/45701	17	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45701		
H01L2224/45705	18	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45705		
H01L2224/45709	18	Indium (In) as principal constituent	CPCONLY	H01L2224/45709		
H01L2224/45711	18	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45711		
H01L2224/45713	18	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45713		
H01L2224/45714	18	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45714		
H01L2224/45716	18	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45716		
H01L2224/45717	17	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45717		1
H01L2224/45718	18	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45718		
H01L2224/4572	18	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4572		
H01L2224/45723	18	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45723		
H01L2224/45724	18	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45724		
H01L2224/45738	17	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45738		
H01L2224/45739	18	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45739		
H01L2224/45744	18	Gold (Au) as principal constituent	CPCONLY	H01L2224/45744		
H01L2224/45747	18	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45747		
H01L2224/45749	18	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45749		
H01L2224/45755	18	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45755		1
H01L2224/45757	18	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45757		1
H01L2224/4576	18	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4576		
H01L2224/45763	17	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45763		
H01L2224/45764	18	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45764		
H01L2224/45766	18	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45766		
H01L2224/45769	18	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45769		
H01L2224/4577	18	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4577		
H01L2224/45771	18	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45771		
H01L2224/45772	18	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45772		
H01L2224/45773	18	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45773		
H01L2224/45776	18	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45776		
H01L2224/45778	18	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45778		
H01L2224/45779	18	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45779		
H01L2224/4578	18	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4578		1
H01L2224/45781	18	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45781		
H01L2224/45783	18	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45783		
H01L2224/45784	18	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45784		1
H01L2224/45786	16	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45786		
H01L2224/45787	17	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45787		
H01L2224/45788	17	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45788		
H01L2224/4579	16	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4579		8
H01L2224/45791	17	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45791		
H01L2224/45793	16	with a principal constituent of the material being a solid not provided for in groups H01L2224/457&#160;-&#160;H01L2224/45791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45793		
H01L2224/45794	16	with a principal constituent of the material being a liquid not provided for in groups H01L2224/457&#160;-&#160;H01L2224/45791	CPCONLY	H01L2224/45794		
H01L2224/45795	16	with a principal constituent of the material being a gas not provided for in groups H01L2224/457&#160;-&#160;H01L2224/45791	CPCONLY	H01L2224/45795		
H01L2224/45798	15	Fillers	CPCONLY	H01L2224/45798		
H01L2224/45799	16	Base material	CPCONLY	H01L2224/45799		
H01L2224/458	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/458		
H01L2224/45801	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45801		
H01L2224/45805	19	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45805		
H01L2224/45809	19	Indium (In) as principal constituent	CPCONLY	H01L2224/45809		
H01L2224/45811	19	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45811		2
H01L2224/45813	19	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45813		
H01L2224/45814	19	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45814		
H01L2224/45816	19	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45816		
H01L2224/45817	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45817		1
H01L2224/45818	19	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45818		
H01L2224/4582	19	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4582		
H01L2224/45823	19	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45823		
H01L2224/45824	19	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45824		2
H01L2224/45838	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45838		
H01L2224/45839	19	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45839		2
H01L2224/45844	19	Gold (Au) as principal constituent	CPCONLY	H01L2224/45844		2
H01L2224/45847	19	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45847		3
H01L2224/45849	19	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45849		
H01L2224/45855	19	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45855		4
H01L2224/45857	19	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45857		1
H01L2224/4586	19	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4586		1
H01L2224/45863	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45863		
H01L2224/45864	19	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45864		
H01L2224/45866	19	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45866		
H01L2224/45869	19	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45869		
H01L2224/4587	19	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4587		
H01L2224/45871	19	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45871		
H01L2224/45872	19	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45872		
H01L2224/45873	19	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45873		
H01L2224/45876	19	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45876		
H01L2224/45878	19	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45878		
H01L2224/45879	19	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45879		
H01L2224/4588	19	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4588		1
H01L2224/45881	19	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45881		
H01L2224/45883	19	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45883		
H01L2224/45884	19	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45884		1
H01L2224/45886	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45886		1
H01L2224/45887	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45887		1
H01L2224/45888	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45888		
H01L2224/4589	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4589		
H01L2224/45891	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45891		
H01L2224/45893	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/458&#160;-&#160;H01L2224/45891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45893		4
H01L2224/45894	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/458&#160;-&#160;H01L2224/45891	CPCONLY	H01L2224/45894		
H01L2224/45895	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/458&#160;-&#160;H01L2224/45891	CPCONLY	H01L2224/45895		
H01L2224/45898	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45898		
H01L2224/45899	16	Coating material	CPCONLY	H01L2224/45899		
H01L2224/459	17	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/459		
H01L2224/45901	18	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/45901		
H01L2224/45905	19	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/45905		
H01L2224/45909	19	Indium (In) as principal constituent	CPCONLY	H01L2224/45909		
H01L2224/45911	19	Tin (Sn) as principal constituent	CPCONLY	H01L2224/45911		
H01L2224/45913	19	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/45913		
H01L2224/45914	19	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/45914		
H01L2224/45916	19	Lead (Pb) as principal constituent	CPCONLY	H01L2224/45916		
H01L2224/45917	18	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/45917		
H01L2224/45918	19	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/45918		
H01L2224/4592	19	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4592		
H01L2224/45923	19	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/45923		
H01L2224/45924	19	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/45924		
H01L2224/45938	18	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/45938		
H01L2224/45939	19	Silver (Ag) as principal constituent	CPCONLY	H01L2224/45939		
H01L2224/45944	19	Gold (Au) as principal constituent	CPCONLY	H01L2224/45944		2
H01L2224/45947	19	Copper (Cu) as principal constituent	CPCONLY	H01L2224/45947		
H01L2224/45949	19	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/45949		
H01L2224/45955	19	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/45955		
H01L2224/45957	19	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/45957		
H01L2224/4596	19	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4596		
H01L2224/45963	18	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/45963		
H01L2224/45964	19	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/45964		2
H01L2224/45966	19	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/45966		
H01L2224/45969	19	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/45969		
H01L2224/4597	19	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4597		
H01L2224/45971	19	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/45971		
H01L2224/45972	19	Vanadium (V) as principal constituent	CPCONLY	H01L2224/45972		
H01L2224/45973	19	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/45973		
H01L2224/45976	19	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/45976		
H01L2224/45978	19	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/45978		
H01L2224/45979	19	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/45979		
H01L2224/4598	19	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4598		
H01L2224/45981	19	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/45981		
H01L2224/45983	19	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/45983		
H01L2224/45984	19	Tungsten (W) as principal constituent	CPCONLY	H01L2224/45984		
H01L2224/45986	17	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/45986		
H01L2224/45987	18	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/45987		
H01L2224/45988	18	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/45988		
H01L2224/4599	17	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4599		
H01L2224/45991	18	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/45991		
H01L2224/45993	17	with a principal constituent of the material being a solid not provided for in groups H01L2224/459&#160;-&#160;H01L2224/45991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/45993		
H01L2224/45994	17	with a principal constituent of the material being a liquid not provided for in groups H01L2224/459&#160;-&#160;H01L2224/45991	CPCONLY	H01L2224/45994		
H01L2224/45995	17	with a principal constituent of the material being a gas not provided for in groups H01L2224/459&#160;-&#160;H01L2224/45991	CPCONLY	H01L2224/45995		
H01L2224/45998	17	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/45998		
H01L2224/45999	15	Shape or distribution of the fillers	CPCONLY	H01L2224/45999		
H01L2224/46	11	of a plurality of wire connectors	CPCONLY	H01L2224/46		53
H01L2224/47	10	Structure, shape, material or disposition of the wire connectors after the connecting process	CPCONLY	H01L2224/47		20
H01L2224/48	11	of an individual wire connector	CPCONLY	H01L2224/48		11399
H01L2224/4801	12	Structure	CPCONLY	H01L2224/4801		39
H01L2224/48011	13	Length	CPCONLY	H01L2224/48011		242
H01L2224/4805	12	Shape	CPCONLY	H01L2224/4805		49
H01L2224/4807	13	of bonding interfaces, e.g. interlocking features	CPCONLY	H01L2224/4807		433
H01L2224/4809	13	Loop shape	CPCONLY	H01L2224/4809		955
H01L2224/48091	14	Arched	CPCONLY	H01L2224/48091		95256
H01L2224/48092	14	Helix	CPCONLY	H01L2224/48092		110
H01L2224/48095	14	Kinked	CPCONLY	H01L2224/48095		1817
H01L2224/48096	15	the kinked part being in proximity to the bonding area on the semiconductor or solid-state body	CPCONLY	H01L2224/48096		238
H01L2224/48097	15	the kinked part being in proximity to the bonding area outside the semiconductor or solid-state body	CPCONLY	H01L2224/48097		67
H01L2224/481	12	Disposition	CPCONLY	H01L2224/481		25
H01L2224/48101	13	Connecting bonding areas at the same height, e.g. horizontal bond	CPCONLY	H01L2224/48101		160
H01L2224/48105	13	Connecting bonding areas at different heights	CPCONLY	H01L2224/48105		316
H01L2224/48106	14	the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout	CPCONLY	H01L2224/48106		592
H01L2224/48108	14	the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout	CPCONLY	H01L2224/48108		123
H01L2224/4811	13	Connecting to a bonding area of the semiconductor or solid-state body located at the far end of the body with respect to the bonding area outside the semiconductor or solid-state body	CPCONLY	H01L2224/4811		72
H01L2224/48111	13	the wire connector extending above another semiconductor or solid-state body	CPCONLY	H01L2224/48111		285
H01L2224/4813	13	Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire	CPCONLY	H01L2224/4813		852
H01L2224/48132	14	with an intermediate bond, e.g. continuous wire daisy chain	CPCONLY	H01L2224/48132		92
H01L2224/48135	13	Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip	CPCONLY	H01L2224/48135		30
H01L2224/48137	14	the bodies being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/48137		10279
H01L2224/48138	15	the wire connector connecting to a bonding area disposed in a recess of the surface	CPCONLY	H01L2224/48138		29
H01L2224/48139	15	with an intermediate bond, e.g. continuous wire daisy chain	CPCONLY	H01L2224/48139		1252
H01L2224/4814	15	the wire connector connecting to a bonding area protruding from the surface	CPCONLY	H01L2224/4814		28
H01L2224/48141	14	the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements	CPCONLY	H01L2224/48141		10
H01L2224/48145	14	the bodies being stacked	CPCONLY	H01L2224/48145		2833
H01L2224/48147	15	with an intermediate bond, e.g. continuous wire daisy chain	CPCONLY	H01L2224/48147		493
H01L2224/48148	15	the wire connector connecting to a bonding area disposed in a recess of the surface	CPCONLY	H01L2224/48148		43
H01L2224/48149	15	the wire connector connecting to a bonding area protruding from the surface	CPCONLY	H01L2224/48149		65
H01L2224/48151	13	Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive	CPCONLY	H01L2224/48151		55
H01L2224/48153	14	the body and the item being arranged next to each other, e.g. on a common substrate	CPCONLY	H01L2224/48153		25
H01L2224/48155	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/48155		80
H01L2224/48157	16	connecting the wire to a bond pad of the item	CPCONLY	H01L2224/48157		217
H01L2224/48158	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/48158		17
H01L2224/48159	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/48159		38
H01L2224/4816	16	connecting the wire to a pin of the item	CPCONLY	H01L2224/4816		8
H01L2224/48163	16	connecting the wire to a potential ring of the item	CPCONLY	H01L2224/48163		2
H01L2224/48165	16	connecting the wire to a via metallisation of the item	CPCONLY	H01L2224/48165		14
H01L2224/48175	15	the item being metallic	CPCONLY	H01L2224/48175		385
H01L2224/48177	16	connecting the wire to a bond pad of the item	CPCONLY	H01L2224/48177		147
H01L2224/48178	16	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/48178		4
H01L2224/48179	16	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/48179		15
H01L2224/48183	16	connecting the wire to a potential ring of the item	CPCONLY	H01L2224/48183		
H01L2224/48195	15	the item being a discrete passive component	CPCONLY	H01L2224/48195		468
H01L2224/48221	14	the body and the item being stacked	CPCONLY	H01L2224/48221		75
H01L2224/48225	15	the item being non-metallic, e.g. insulating substrate with or without metallisation	CPCONLY	H01L2224/48225		1996
H01L2224/48227	16	connecting the wire to a bond pad of the item	CPCONLY	H01L2224/48227		37786
H01L2224/48228	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/48228		1646
H01L2224/48229	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/48229		366
H01L2224/4823	16	connecting the wire to a pin of the item	CPCONLY	H01L2224/4823		754
H01L2224/48233	16	connecting the wire to a potential ring of the item	CPCONLY	H01L2224/48233		190
H01L2224/48235	16	connecting the wire to a via metallisation of the item	CPCONLY	H01L2224/48235		554
H01L2224/48237	16	connecting the wire to a die pad of the item	CPCONLY	H01L2224/48237		566
H01L2224/4824	16	Connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/4824		2260
H01L2224/48245	15	the item being metallic	CPCONLY	H01L2224/48245		1916
H01L2224/48247	16	connecting the wire to a bond pad of the item	CPCONLY	H01L2224/48247		45761
H01L2224/48248	17	the bond pad being disposed in a recess of the surface of the item	CPCONLY	H01L2224/48248		38
H01L2224/48249	17	the bond pad protruding from the surface of the item	CPCONLY	H01L2224/48249		65
H01L2224/48253	16	connecting the wire to a potential ring of the item	CPCONLY	H01L2224/48253		169
H01L2224/48257	16	connecting the wire to a die pad of the item	CPCONLY	H01L2224/48257		4595
H01L2224/4826	16	Connecting between the body and an opposite side of the item with respect to the body	CPCONLY	H01L2224/4826		2106
H01L2224/48265	15	the item being a discrete passive component	CPCONLY	H01L2224/48265		82
H01L2224/484	12	Connecting portions	CPCONLY	H01L2224/484		817
H01L2224/4845	13	Details of ball bonds	CPCONLY	H01L2224/4845		230
H01L2224/48451	14	Shape	CPCONLY	H01L2224/48451		135
H01L2224/48453	15	of the interface with the bonding area	CPCONLY	H01L2224/48453		692
H01L2224/48455	13	Details of wedge bonds	CPCONLY	H01L2224/48455		428
H01L2224/48456	14	Shape	CPCONLY	H01L2224/48456		148
H01L2224/48458	15	of the interface with the bonding area	CPCONLY	H01L2224/48458		132
H01L2224/4846	13	with multiple bonds on the same bonding area	CPCONLY	H01L2224/4846		636
H01L2224/48463	13	the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond	CPCONLY	H01L2224/48463		4699
H01L2224/48464	14	the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball	CPCONLY	H01L2224/48464		1547
H01L2224/48465	14	the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch	CPCONLY	H01L2224/48465		13739
H01L2224/4847	13	the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond	CPCONLY	H01L2224/4847		1608
H01L2224/48471	14	the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch	CPCONLY	H01L2224/48471		1366
H01L2224/48472	14	the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge	CPCONLY	H01L2224/48472		6162
H01L2224/48475	13	connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball	CPCONLY	H01L2224/48475		234
H01L2224/48476	14	between the wire connector and the bonding area	CPCONLY	H01L2224/48476		37
H01L2224/48477	15	being a pre-ball (i.e. a ball formed by capillary bonding)	CPCONLY	H01L2224/48477		50
H01L2224/48478	16	the connecting portion being a wedge bond, i.e. wedge on pre-ball	CPCONLY	H01L2224/48478		7
H01L2224/48479	17	on the semiconductor or solid-state body	CPCONLY	H01L2224/48479		556
H01L2224/4848	17	outside the semiconductor or solid-state body	CPCONLY	H01L2224/4848		277
H01L2224/48481	16	the connecting portion being a ball bond, i.e. ball on pre-ball	CPCONLY	H01L2224/48481		2
H01L2224/48482	17	on the semiconductor or solid-state body	CPCONLY	H01L2224/48482		92
H01L2224/48483	17	outside the semiconductor or solid-state body	CPCONLY	H01L2224/48483		22
H01L2224/48484	16	being a plurality of pre-balls disposed side-to-side	CPCONLY	H01L2224/48484		13
H01L2224/48485	17	the connecting portion being a wedge bond, i.e. wedge on pre-ball	CPCONLY	H01L2224/48485		4
H01L2224/48486	18	on the semiconductor or solid-state body	CPCONLY	H01L2224/48486		7
H01L2224/48487	18	outside the semiconductor or solid-state body	CPCONLY	H01L2224/48487		8
H01L2224/48488	17	the connecting portion being a ball bond, i.e. ball on pre-ball	CPCONLY	H01L2224/48488		1
H01L2224/48489	18	on the semiconductor or solid-state body	CPCONLY	H01L2224/48489		2
H01L2224/4849	18	outside the semiconductor or solid-state body	CPCONLY	H01L2224/4849		6
H01L2224/48491	15	being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad	CPCONLY	H01L2224/48491		260
H01L2224/48496	14	not being interposed between the wire connector and the bonding area	CPCONLY	H01L2224/48496		15
H01L2224/48499	14	Material of the auxiliary connecting means	CPCONLY	H01L2224/48499		159
H01L2224/485	12	Material	CPCONLY	H01L2224/485		12
H01L2224/48505	13	at the bonding interface	CPCONLY	H01L2224/48505		33
H01L2224/48506	14	comprising an eutectic alloy	CPCONLY	H01L2224/48506		7
H01L2224/48507	14	comprising an intermetallic compound	CPCONLY	H01L2224/48507		138
H01L2224/4851	14	Morphology of the connecting portion, e.g. grain size distribution	CPCONLY	H01L2224/4851		113
H01L2224/48511	15	Heat affected zone [HAZ]	CPCONLY	H01L2224/48511		106
H01L2224/4852	14	Bonding interface between the connecting portion and the bonding area	CPCONLY	H01L2224/4852		10
H01L2224/48599	14	Principal constituent of the connecting portion of the wire connector being Gold (Au)	CPCONLY	H01L2224/48599		1403
H01L2224/486	15	with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/486		
H01L2224/48601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/48601		4
H01L2224/48605	17	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/48605		1
H01L2224/48609	17	Indium (In) as principal constituent	CPCONLY	H01L2224/48609		6
H01L2224/48611	17	Tin (Sn) as principal constituent	CPCONLY	H01L2224/48611		58
H01L2224/48613	17	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/48613		3
H01L2224/48614	17	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/48614		
H01L2224/48616	17	Lead (Pb) as principal constituent	CPCONLY	H01L2224/48616		12
H01L2224/48617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950 &#176;C	CPCONLY	H01L2224/48617		
H01L2224/48618	17	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/48618		6
H01L2224/4862	17	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4862		1
H01L2224/48623	17	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/48623		3
H01L2224/48624	17	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/48624		1383
H01L2224/48638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/48638		3
H01L2224/48639	17	Silver (Ag) as principal constituent	CPCONLY	H01L2224/48639		425
H01L2224/48644	17	Gold (Au) as principal constituent	CPCONLY	H01L2224/48644		779
H01L2224/48647	17	Copper (Cu) as principal constituent	CPCONLY	H01L2224/48647		507
H01L2224/48649	17	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/48649		1
H01L2224/48655	17	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/48655		239
H01L2224/48657	17	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/48657		8
H01L2224/4866	17	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4866		12
H01L2224/48663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/48663		
H01L2224/48664	17	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/48664		269
H01L2224/48666	17	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/48666		57
H01L2224/48669	17	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/48669		87
H01L2224/4867	17	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4867		
H01L2224/48671	17	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/48671		12
H01L2224/48672	17	Vanadium (V) as principal constituent	CPCONLY	H01L2224/48672		1
H01L2224/48673	17	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/48673		6
H01L2224/48678	17	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/48678		3
H01L2224/48679	17	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/48679		
H01L2224/4868	17	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4868		9
H01L2224/48681	17	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/48681		13
H01L2224/48683	17	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/48683		1
H01L2224/48684	17	Tungsten (W) as principal constituent	CPCONLY	H01L2224/48684		23
H01L2224/48686	15	with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/48686		2
H01L2224/48687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/48687		5
H01L2224/48688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/48688		
H01L2224/4869	15	with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4869		6
H01L2224/48691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/48691		
H01L2224/48693	15	with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/486&#160;-&#160;H01L2224/4869, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/48693		3
H01L2224/48694	15	with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/486&#160;-&#160;H01L2224/4869	CPCONLY	H01L2224/48694		
H01L2224/48698	15	with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns	CPCONLY	H01L2224/48698		
H01L2224/48699	14	Principal constituent of the connecting portion of the wire connector being Aluminium (Al)	CPCONLY	H01L2224/48699		891
H01L2224/487	15	with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/487		1
H01L2224/48701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/48701		4
H01L2224/48705	17	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/48705		1
H01L2224/48709	17	Indium (In) as principal constituent	CPCONLY	H01L2224/48709		4
H01L2224/48711	17	Tin (Sn) as principal constituent	CPCONLY	H01L2224/48711		30
H01L2224/48713	17	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/48713		3
H01L2224/48714	17	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/48714		
H01L2224/48716	17	Lead (Pb) as principal constituent	CPCONLY	H01L2224/48716		7
H01L2224/48717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950 &#176;C	CPCONLY	H01L2224/48717		
H01L2224/48718	17	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/48718		4
H01L2224/4872	17	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4872		1
H01L2224/48723	17	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/48723		2
H01L2224/48724	17	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/48724		805
H01L2224/48738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/48738		2
H01L2224/48739	17	Silver (Ag) as principal constituent	CPCONLY	H01L2224/48739		226
H01L2224/48744	17	Gold (Au) as principal constituent	CPCONLY	H01L2224/48744		404
H01L2224/48747	17	Copper (Cu) as principal constituent	CPCONLY	H01L2224/48747		348
H01L2224/48749	17	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/48749		
H01L2224/48755	17	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/48755		186
H01L2224/48757	17	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/48757		8
H01L2224/4876	17	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4876		9
H01L2224/48763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/48763		
H01L2224/48764	17	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/48764		147
H01L2224/48766	17	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/48766		45
H01L2224/48769	17	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/48769		52
H01L2224/4877	17	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4877		
H01L2224/48771	17	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/48771		10
H01L2224/48772	17	Vanadium (V) as principal constituent	CPCONLY	H01L2224/48772		
H01L2224/48773	17	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/48773		5
H01L2224/48778	17	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/48778		1
H01L2224/48779	17	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/48779		1
H01L2224/4878	17	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4878		11
H01L2224/48781	17	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/48781		12
H01L2224/48783	17	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/48783		
H01L2224/48784	17	Tungsten (W) as principal constituent	CPCONLY	H01L2224/48784		21
H01L2224/48786	15	with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/48786		1
H01L2224/48787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/48787		
H01L2224/48788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/48788		
H01L2224/4879	15	with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4879		1
H01L2224/48791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/48791		
H01L2224/48793	15	with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/487&#160;-&#160;H01L2224/4879, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/48793		2
H01L2224/48794	15	with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/487&#160;-&#160;H01L2224/4879	CPCONLY	H01L2224/48794		
H01L2224/48798	15	with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns	CPCONLY	H01L2224/48798		
H01L2224/48799	14	Principal constituent of the connecting portion of the wire connector being Copper (Cu)	CPCONLY	H01L2224/48799		348
H01L2224/488	15	with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/488		
H01L2224/48801	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/48801		5
H01L2224/48805	17	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/48805		1
H01L2224/48809	17	Indium (In) as principal constituent	CPCONLY	H01L2224/48809		5
H01L2224/48811	17	Tin (Sn) as principal constituent	CPCONLY	H01L2224/48811		37
H01L2224/48813	17	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/48813		2
H01L2224/48814	17	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/48814		
H01L2224/48816	17	Lead (Pb) as principal constituent	CPCONLY	H01L2224/48816		9
H01L2224/48817	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950 &#176;C	CPCONLY	H01L2224/48817		
H01L2224/48818	17	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/48818		8
H01L2224/4882	17	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/4882		1
H01L2224/48823	17	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/48823		3
H01L2224/48824	17	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/48824		735
H01L2224/48838	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/48838		2
H01L2224/48839	17	Silver (Ag) as principal constituent	CPCONLY	H01L2224/48839		267
H01L2224/48844	17	Gold (Au) as principal constituent	CPCONLY	H01L2224/48844		380
H01L2224/48847	17	Copper (Cu) as principal constituent	CPCONLY	H01L2224/48847		396
H01L2224/48849	17	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/48849		1
H01L2224/48855	17	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/48855		168
H01L2224/48857	17	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/48857		7
H01L2224/4886	17	Iron (Fe) as principal constituent	CPCONLY	H01L2224/4886		10
H01L2224/48863	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/48863		
H01L2224/48864	17	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/48864		170
H01L2224/48866	17	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/48866		33
H01L2224/48869	17	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/48869		48
H01L2224/4887	17	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/4887		
H01L2224/48871	17	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/48871		12
H01L2224/48872	17	Vanadium (V) as principal constituent	CPCONLY	H01L2224/48872		2
H01L2224/48873	17	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/48873		7
H01L2224/48878	17	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/48878		1
H01L2224/48879	17	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/48879		2
H01L2224/4888	17	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/4888		6
H01L2224/48881	17	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/48881		10
H01L2224/48883	17	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/48883		
H01L2224/48884	17	Tungsten (W) as principal constituent	CPCONLY	H01L2224/48884		16
H01L2224/48886	15	with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/48886		1
H01L2224/48887	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/48887		1
H01L2224/48888	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/48888		
H01L2224/4889	15	with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/4889		2
H01L2224/48891	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/48891		
H01L2224/48893	15	with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/488&#160;-&#160;H01L2224/4889, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/48893		3
H01L2224/48894	15	with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/488&#160;-&#160;H01L2224/4889	CPCONLY	H01L2224/48894		
H01L2224/48898	15	with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns	CPCONLY	H01L2224/48898		
H01L2224/4899	12	Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids	CPCONLY	H01L2224/4899		431
H01L2224/48991	13	being formed on the semiconductor or solid-state body to be connected	CPCONLY	H01L2224/48991		19
H01L2224/48992	14	Reinforcing structures	CPCONLY	H01L2224/48992		139
H01L2224/48993	14	Alignment aids	CPCONLY	H01L2224/48993		25
H01L2224/48996	13	being formed on an item to be connected not being a semiconductor or solid-state body	CPCONLY	H01L2224/48996		22
H01L2224/48997	14	Reinforcing structures	CPCONLY	H01L2224/48997		164
H01L2224/48998	14	Alignment aids	CPCONLY	H01L2224/48998		56
H01L2224/49	11	of a plurality of wire connectors	CPCONLY	H01L2224/49		3271
H01L2224/4901	12	Structure	CPCONLY	H01L2224/4901		16
H01L2224/4903	13	Connectors having different sizes, e.g. different diameters	CPCONLY	H01L2224/4903		1655
H01L2224/4905	12	Shape	CPCONLY	H01L2224/4905		17
H01L2224/49051	13	Connectors having different shapes	CPCONLY	H01L2224/49051		396
H01L2224/49052	14	Different loop heights	CPCONLY	H01L2224/49052		324
H01L2224/4909	13	Loop shape arrangement	CPCONLY	H01L2224/4909		58
H01L2224/49095	14	parallel in plane	CPCONLY	H01L2224/49095		28
H01L2224/49096	15	horizontal	CPCONLY	H01L2224/49096		43
H01L2224/49097	15	vertical	CPCONLY	H01L2224/49097		31
H01L2224/491	12	Disposition	CPCONLY	H01L2224/491		38
H01L2224/49105	13	Connecting at different heights	CPCONLY	H01L2224/49105		19
H01L2224/49107	14	on the semiconductor or solid-state body	CPCONLY	H01L2224/49107		2412
H01L2224/49109	14	outside the semiconductor or solid-state body	CPCONLY	H01L2224/49109		2639
H01L2224/4911	13	the connectors being bonded to at least one common bonding area, e.g. daisy chain	CPCONLY	H01L2224/4911		1143
H01L2224/49111	14	the connectors connecting two common bonding areas, e.g. Litz or braid wires	CPCONLY	H01L2224/49111		4157
H01L2224/49112	14	the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires	CPCONLY	H01L2224/49112		369
H01L2224/49113	14	the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires	CPCONLY	H01L2224/49113		3064
H01L2224/4912	13	Layout	CPCONLY	H01L2224/4912		218
H01L2224/4917	14	Crossed wires	CPCONLY	H01L2224/4917		524
H01L2224/49171	14	Fan-out arrangements	CPCONLY	H01L2224/49171		12080
H01L2224/49173	15	Radial fan-out arrangements	CPCONLY	H01L2224/49173		175
H01L2224/49174	14	Stacked arrangements	CPCONLY	H01L2224/49174		106
H01L2224/49175	14	Parallel arrangements	CPCONLY	H01L2224/49175		7930
H01L2224/49176	15	Wire connectors having the same loop shape and height	CPCONLY	H01L2224/49176		238
H01L2224/49177	14	Combinations of different arrangements	CPCONLY	H01L2224/49177		105
H01L2224/49179	15	Corner adaptations, i.e. disposition of the wire connectors at the corners of the semiconductor or solid-state body	CPCONLY	H01L2224/49179		100
H01L2224/4918	13	being disposed on at least two different sides of the body, e.g. dual array	CPCONLY	H01L2224/4918		248
H01L2224/494	12	Connecting portions	CPCONLY	H01L2224/494		11
H01L2224/4941	13	the connecting portions being stacked	CPCONLY	H01L2224/4941		22
H01L2224/4942	14	Ball bonds	CPCONLY	H01L2224/4942		24
H01L2224/49421	15	on the semiconductor or solid-state body	CPCONLY	H01L2224/49421		20
H01L2224/49422	15	outside the semiconductor or solid-state body	CPCONLY	H01L2224/49422		4
H01L2224/49425	14	Wedge bonds	CPCONLY	H01L2224/49425		20
H01L2224/49426	15	on the semiconductor or solid-state body	CPCONLY	H01L2224/49426		40
H01L2224/49427	15	outside the semiconductor or solid-state body	CPCONLY	H01L2224/49427		33
H01L2224/49429	14	Wedge and ball bonds	CPCONLY	H01L2224/49429		102
H01L2224/4943	13	the connecting portions being staggered	CPCONLY	H01L2224/4943		302
H01L2224/49431	14	on the semiconductor or solid-state body	CPCONLY	H01L2224/49431		767
H01L2224/49433	14	outside the semiconductor or solid-state body	CPCONLY	H01L2224/49433		940
H01L2224/4945	13	Wire connectors having connecting portions of different types on the semiconductor or solid-state body, e.g. regular and reverse stitches	CPCONLY	H01L2224/4945		144
H01L2224/495	12	Material	CPCONLY	H01L2224/495		9
H01L2224/49505	13	Connectors having different materials	CPCONLY	H01L2224/49505		85
H01L2224/50	9	Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto	CPCONLY	H01L2224/50		3093
H01L2224/63	9	Connectors not provided for in any of the groups H01L2224/10&#160;-&#160;H01L2224/50 and subgroups; Manufacturing methods related thereto	CPCONLY	H01L2224/63		6
H01L2224/64	10	Manufacturing methods	CPCONLY	H01L2224/64		8
H01L2224/65	10	Structure, shape, material or disposition of the connectors prior to the connecting process	CPCONLY	H01L2224/65		3
H01L2224/66	11	of an individual connector	CPCONLY	H01L2224/66		14
H01L2224/67	11	of a plurality of connectors	CPCONLY	H01L2224/67		7
H01L2224/68	10	Structure, shape, material or disposition of the connectors after the connecting process	CPCONLY	H01L2224/68		
H01L2224/69	11	of an individual connector	CPCONLY	H01L2224/69		14
H01L2224/70	11	of a plurality of connectors	CPCONLY	H01L2224/70		3
H01L2224/71	8	Means for bonding not being attached to, or not being formed on, the surface to be connected	CPCONLY	H01L2224/71		11
H01L2224/72	9	Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips	CPCONLY	H01L2224/72		250
H01L2224/73	8	Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71	CPCONLY	H01L2224/73		33
H01L2224/731	9	Location prior to the connecting process	CPCONLY	H01L2224/731		39
H01L2224/73101	10	on the same surface	CPCONLY	H01L2224/73101		22
H01L2224/73103	11	Bump and layer connectors	CPCONLY	H01L2224/73103		262
H01L2224/73104	12	the bump connector being embedded into the layer connector	CPCONLY	H01L2224/73104		1044
H01L2224/73151	10	on different surfaces	CPCONLY	H01L2224/73151		9
H01L2224/73153	11	Bump and layer connectors	CPCONLY	H01L2224/73153		143
H01L2224/732	9	Location after the connecting process	CPCONLY	H01L2224/732		17
H01L2224/73201	10	on the same surface	CPCONLY	H01L2224/73201		130
H01L2224/73203	11	Bump and layer connectors	CPCONLY	H01L2224/73203		2668
H01L2224/73204	12	the bump connector being embedded into the layer connector	CPCONLY	H01L2224/73204		20681
H01L2224/73205	11	Bump and strap connectors	CPCONLY	H01L2224/73205		18
H01L2224/73207	11	Bump and wire connectors	CPCONLY	H01L2224/73207		873
H01L2224/73209	11	Bump and HDI connectors	CPCONLY	H01L2224/73209		338
H01L2224/73211	11	Bump and TAB connectors	CPCONLY	H01L2224/73211		8
H01L2224/73213	11	Layer and strap connectors	CPCONLY	H01L2224/73213		58
H01L2224/73215	11	Layer and wire connectors	CPCONLY	H01L2224/73215		4165
H01L2224/73217	11	Layer and HDI connectors	CPCONLY	H01L2224/73217		202
H01L2224/73219	11	Layer and TAB connectors	CPCONLY	H01L2224/73219		98
H01L2224/73221	11	Strap and wire connectors	CPCONLY	H01L2224/73221		2226
H01L2224/73223	11	Strap and HDI connectors	CPCONLY	H01L2224/73223		4
H01L2224/73225	11	Strap and TAB connectors	CPCONLY	H01L2224/73225		
H01L2224/73227	11	Wire and HDI connectors	CPCONLY	H01L2224/73227		123
H01L2224/73229	11	Wire and TAB connectors	CPCONLY	H01L2224/73229		22
H01L2224/73231	11	HDI and TAB connectors	CPCONLY	H01L2224/73231		
H01L2224/73251	10	on different surfaces	CPCONLY	H01L2224/73251		552
H01L2224/73253	11	Bump and layer connectors	CPCONLY	H01L2224/73253		8396
H01L2224/73255	11	Bump and strap connectors	CPCONLY	H01L2224/73255		83
H01L2224/73257	11	Bump and wire connectors	CPCONLY	H01L2224/73257		1107
H01L2224/73259	11	Bump and HDI connectors	CPCONLY	H01L2224/73259		578
H01L2224/73261	11	Bump and TAB connectors	CPCONLY	H01L2224/73261		6
H01L2224/73263	11	Layer and strap connectors	CPCONLY	H01L2224/73263		792
H01L2224/73265	11	Layer and wire connectors	CPCONLY	H01L2224/73265		46585
H01L2224/73267	11	Layer and HDI connectors	CPCONLY	H01L2224/73267		4980
H01L2224/73269	11	Layer and TAB connectors	CPCONLY	H01L2224/73269		60
H01L2224/73271	11	Strap and wire connectors	CPCONLY	H01L2224/73271		36
H01L2224/73273	11	Strap and HDI connectors	CPCONLY	H01L2224/73273		6
H01L2224/73275	11	Strap and TAB connectors	CPCONLY	H01L2224/73275		
H01L2224/73277	11	Wire and HDI connectors	CPCONLY	H01L2224/73277		34
H01L2224/73279	11	Wire and TAB connectors	CPCONLY	H01L2224/73279		3
H01L2224/73281	11	HDI and TAB connectors	CPCONLY	H01L2224/73281		
H01L2224/74	8	Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto	CPCONLY	H01L2224/74		81
H01L2224/741	9	Apparatus for manufacturing means for bonding, e.g. connectors	CPCONLY	H01L2224/741		77
H01L2224/742	10	Apparatus for manufacturing bump connectors	CPCONLY	H01L2224/742		489
H01L2224/743	10	Apparatus for manufacturing layer connectors	CPCONLY	H01L2224/743		1261
H01L2224/744	10	Apparatus for manufacturing strap connectors	CPCONLY	H01L2224/744		6
H01L2224/745	10	Apparatus for manufacturing wire connectors	CPCONLY	H01L2224/745		145
H01L2224/749	10	Tools for reworking, e.g. for shaping	CPCONLY	H01L2224/749		23
H01L2224/75	9	Apparatus for connecting with bump connectors or layer connectors	CPCONLY	H01L2224/75		1377
H01L2224/75001	10	Calibration means	CPCONLY	H01L2224/75001		29
H01L2224/7501	10	Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma	CPCONLY	H01L2224/7501		174
H01L2224/751	10	Means for controlling the bonding environment, e.g. valves, vacuum pumps	CPCONLY	H01L2224/751		109
H01L2224/75101	11	Chamber	CPCONLY	H01L2224/75101		135
H01L2224/75102	12	Vacuum chamber	CPCONLY	H01L2224/75102		100
H01L2224/7511	12	High pressure chamber	CPCONLY	H01L2224/7511		37
H01L2224/7515	10	Means for applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/7515		54
H01L2224/75151	11	Means for direct writing	CPCONLY	H01L2224/75151		2
H01L2224/75152	12	Syringe	CPCONLY	H01L2224/75152		2
H01L2224/75153	13	integrated into the bonding head	CPCONLY	H01L2224/75153		1
H01L2224/75155	12	Jetting means, e.g. ink jet	CPCONLY	H01L2224/75155		5
H01L2224/75158	12	including a laser	CPCONLY	H01L2224/75158		1
H01L2224/75161	11	Means for screen printing, e.g. roller, squeegee, screen stencil	CPCONLY	H01L2224/75161		10
H01L2224/7517	11	Means for applying a preform, e.g. laminator	CPCONLY	H01L2224/7517		3
H01L2224/75171	12	including a vacuum-bag	CPCONLY	H01L2224/75171		
H01L2224/7518	11	Means for blanket deposition	CPCONLY	H01L2224/7518		5
H01L2224/75181	12	for spin coating, i.e. spin coater	CPCONLY	H01L2224/75181		
H01L2224/75182	12	for curtain coating	CPCONLY	H01L2224/75182		
H01L2224/75183	12	for immersion coating, i.e. bath	CPCONLY	H01L2224/75183		4
H01L2224/75184	12	for spray coating, i.e. nozzle	CPCONLY	H01L2224/75184		6
H01L2224/75185	12	Means for physical vapour deposition [PVD], e.g. evaporation, sputtering	CPCONLY	H01L2224/75185		1
H01L2224/75186	12	Means for sputtering, e.g. target	CPCONLY	H01L2224/75186		4
H01L2224/75187	12	Means for evaporation	CPCONLY	H01L2224/75187		3
H01L2224/75188	12	Means for chemical vapour deposition [CVD], e.g. for laser CVD	CPCONLY	H01L2224/75188		
H01L2224/75189	12	Means for plating, e.g. for electroplating, electroless plating	CPCONLY	H01L2224/75189		3
H01L2224/752	10	Protection means against electrical discharge	CPCONLY	H01L2224/752		9
H01L2224/7525	10	Means for applying energy, e.g. heating means	CPCONLY	H01L2224/7525		133
H01L2224/75251	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75251		495
H01L2224/75252	11	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75252		684
H01L2224/75253	11	adapted for localised heating	CPCONLY	H01L2224/75253		117
H01L2224/7526	11	Polychromatic heating lamp	CPCONLY	H01L2224/7526		23
H01L2224/75261	11	Laser	CPCONLY	H01L2224/75261		61
H01L2224/75262	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75262		41
H01L2224/75263	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75263		146
H01L2224/75264	11	by induction heating, i.e. coils	CPCONLY	H01L2224/75264		22
H01L2224/75265	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75265		27
H01L2224/75266	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75266		36
H01L2224/75267	11	Flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/75267		2
H01L2224/75268	11	Discharge electrode	CPCONLY	H01L2224/75268		1
H01L2224/75269	12	Shape of the discharge electrode	CPCONLY	H01L2224/75269		
H01L2224/7527	12	Material of the discharge electrode	CPCONLY	H01L2224/7527		
H01L2224/75271	12	Circuitry of the discharge electrode	CPCONLY	H01L2224/75271		1
H01L2224/75272	11	Oven	CPCONLY	H01L2224/75272		119
H01L2224/7528	11	Resistance welding electrodes, i.e. for ohmic heating	CPCONLY	H01L2224/7528		6
H01L2224/75281	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75281		17
H01L2224/75282	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75282		21
H01L2224/75283	11	by infrared heating, e.g. infrared heating lamp	CPCONLY	H01L2224/75283		53
H01L2224/753	11	by means of pressure	CPCONLY	H01L2224/753		215
H01L2224/75301	12	Bonding head	CPCONLY	H01L2224/75301		300
H01L2224/75302	13	Shape	CPCONLY	H01L2224/75302		117
H01L2224/75303	14	of the pressing surface	CPCONLY	H01L2224/75303		300
H01L2224/75304	15	being curved	CPCONLY	H01L2224/75304		50
H01L2224/75305	15	comprising protrusions	CPCONLY	H01L2224/75305		107
H01L2224/7531	14	of other parts	CPCONLY	H01L2224/7531		90
H01L2224/75312	13	Material	CPCONLY	H01L2224/75312		81
H01L2224/75313	13	Removable bonding head	CPCONLY	H01L2224/75313		36
H01L2224/75314	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/75314		130
H01L2224/75315	14	Elastomer inlay	CPCONLY	H01L2224/75315		276
H01L2224/75316	15	with retaining mechanisms	CPCONLY	H01L2224/75316		47
H01L2224/75317	14	Removable auxiliary member	CPCONLY	H01L2224/75317		113
H01L2224/75318	14	Shape of the auxiliary member	CPCONLY	H01L2224/75318		32
H01L2224/7532	14	Material of the auxiliary member	CPCONLY	H01L2224/7532		53
H01L2224/75343	12	by ultrasonic vibrations	CPCONLY	H01L2224/75343		56
H01L2224/75344	13	Eccentric cams	CPCONLY	H01L2224/75344		
H01L2224/75345	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75345		
H01L2224/75346	14	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75346		
H01L2224/75347	13	Piezoelectric transducers	CPCONLY	H01L2224/75347		2
H01L2224/75348	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75348		5
H01L2224/75349	14	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75349		12
H01L2224/7535	13	Stable and mobile yokes	CPCONLY	H01L2224/7535		
H01L2224/75351	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75351		
H01L2224/75352	14	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75352		
H01L2224/75353	13	Ultrasonic horns	CPCONLY	H01L2224/75353		17
H01L2224/75354	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75354		2
H01L2224/75355	14	Design, e.g. of the wave guide	CPCONLY	H01L2224/75355		40
H01L2224/755	10	Cooling means	CPCONLY	H01L2224/755		70
H01L2224/75501	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75501		66
H01L2224/75502	11	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75502		84
H01L2224/7555	10	Mechanical means, e.g. for planarising, pressing, stamping	CPCONLY	H01L2224/7555		124
H01L2224/756	10	Means for supplying the connector to be connected in the bonding apparatus	CPCONLY	H01L2224/756		22
H01L2224/75601	11	Storing means	CPCONLY	H01L2224/75601		16
H01L2224/75611	11	Feeding means	CPCONLY	H01L2224/75611		132
H01L2224/75621	11	Holding means	CPCONLY	H01L2224/75621		44
H01L2224/7565	10	Means for transporting the components to be connected	CPCONLY	H01L2224/7565		393
H01L2224/75651	11	Belt conveyor	CPCONLY	H01L2224/75651		71
H01L2224/75652	11	Chain conveyor	CPCONLY	H01L2224/75652		4
H01L2224/75653	11	Vibrating conveyor	CPCONLY	H01L2224/75653		2
H01L2224/75654	11	Pneumatic conveyor	CPCONLY	H01L2224/75654		5
H01L2224/75655	11	in a fluid	CPCONLY	H01L2224/75655		25
H01L2224/757	10	Means for aligning	CPCONLY	H01L2224/757		129
H01L2224/75701	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75701		77
H01L2224/75702	11	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75702		168
H01L2224/75703	11	Mechanical holding means	CPCONLY	H01L2224/75703		31
H01L2224/75704	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75704		70
H01L2224/75705	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75705		62
H01L2224/75723	11	Electrostatic holding means	CPCONLY	H01L2224/75723		10
H01L2224/75724	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75724		27
H01L2224/75725	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75725		54
H01L2224/75733	11	Magnetic holding means	CPCONLY	H01L2224/75733		18
H01L2224/75734	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75734		20
H01L2224/75735	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75735		33
H01L2224/75743	11	Suction holding means	CPCONLY	H01L2224/75743		184
H01L2224/75744	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75744		213
H01L2224/75745	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75745		649
H01L2224/75753	11	Means for optical alignment, e.g. sensors	CPCONLY	H01L2224/75753		345
H01L2224/75754	11	Guiding structures	CPCONLY	H01L2224/75754		47
H01L2224/75755	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/75755		54
H01L2224/75756	12	in the upper part of the bonding apparatus, e.g. in the bonding head	CPCONLY	H01L2224/75756		57
H01L2224/758	10	Means for moving parts	CPCONLY	H01L2224/758		78
H01L2224/75801	11	Lower part of the bonding apparatus, e.g. XY table	CPCONLY	H01L2224/75801		45
H01L2224/75802	12	Rotational mechanism	CPCONLY	H01L2224/75802		41
H01L2224/75803	13	Pivoting mechanism	CPCONLY	H01L2224/75803		11
H01L2224/75804	12	Translational mechanism	CPCONLY	H01L2224/75804		105
H01L2224/75821	11	Upper part of the bonding apparatus, i.e. bonding head	CPCONLY	H01L2224/75821		53
H01L2224/75822	12	Rotational mechanism	CPCONLY	H01L2224/75822		91
H01L2224/75823	13	Pivoting mechanism	CPCONLY	H01L2224/75823		47
H01L2224/75824	12	Translational mechanism	CPCONLY	H01L2224/75824		143
H01L2224/75841	11	of the bonding head	CPCONLY	H01L2224/75841		47
H01L2224/75842	12	Rotational mechanism	CPCONLY	H01L2224/75842		32
H01L2224/75843	13	Pivoting mechanism	CPCONLY	H01L2224/75843		17
H01L2224/759	10	Means for monitoring the connection process	CPCONLY	H01L2224/759		304
H01L2224/75901	11	using a computer, e.g. fully- or semi-automatic bonding	CPCONLY	H01L2224/75901		209
H01L2224/7592	11	Load or pressure adjusting means, e.g. sensors	CPCONLY	H01L2224/7592		98
H01L2224/75925	11	Vibration adjusting means, e.g. sensors	CPCONLY	H01L2224/75925		5
H01L2224/7595	10	Means for forming additional members	CPCONLY	H01L2224/7595		7
H01L2224/7598	10	specially adapted for batch processes	CPCONLY	H01L2224/7598		596
H01L2224/75981	10	Apparatus chuck	CPCONLY	H01L2224/75981		71
H01L2224/75982	11	Shape	CPCONLY	H01L2224/75982		12
H01L2224/75983	12	of the mounting surface	CPCONLY	H01L2224/75983		67
H01L2224/75984	12	of other portions	CPCONLY	H01L2224/75984		32
H01L2224/75985	11	Material	CPCONLY	H01L2224/75985		36
H01L2224/75986	11	Auxiliary members on the pressing surface	CPCONLY	H01L2224/75986		30
H01L2224/75987	12	Shape of the auxiliary member	CPCONLY	H01L2224/75987		16
H01L2224/75988	12	Material of the auxiliary member	CPCONLY	H01L2224/75988		20
H01L2224/76	9	Apparatus for connecting with build-up interconnects	CPCONLY	H01L2224/76		4
H01L2224/76001	10	Calibration means	CPCONLY	H01L2224/76001		7
H01L2224/7601	10	Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma	CPCONLY	H01L2224/7601		2
H01L2224/761	10	Means for controlling the bonding environment, e.g. valves, vacuum pumps	CPCONLY	H01L2224/761		3
H01L2224/76101	11	Chamber	CPCONLY	H01L2224/76101		1
H01L2224/76102	12	Vacuum chamber	CPCONLY	H01L2224/76102		1
H01L2224/7611	12	High pressure chamber	CPCONLY	H01L2224/7611		1
H01L2224/7615	10	Means for depositing	CPCONLY	H01L2224/7615		4
H01L2224/76151	11	Means for direct writing	CPCONLY	H01L2224/76151		5
H01L2224/76152	12	Syringe	CPCONLY	H01L2224/76152		11
H01L2224/76155	12	Jetting means, e.g. ink jet	CPCONLY	H01L2224/76155		318
H01L2224/76158	12	including a laser	CPCONLY	H01L2224/76158		3
H01L2224/76161	11	Means for screen printing, e.g. roller, squeegee, screen stencil	CPCONLY	H01L2224/76161		1
H01L2224/7617	11	Means for applying a preform, e.g. laminator	CPCONLY	H01L2224/7617		1
H01L2224/76171	12	including a vacuum-bag	CPCONLY	H01L2224/76171		1
H01L2224/7618	11	Means for blanket deposition	CPCONLY	H01L2224/7618		
H01L2224/76181	12	for spin coating, i.e. spin coater	CPCONLY	H01L2224/76181		
H01L2224/76182	12	for curtain coating	CPCONLY	H01L2224/76182		
H01L2224/76183	12	for immersion coating, i.e. bath	CPCONLY	H01L2224/76183		1
H01L2224/76184	12	for spray coating, i.e. nozzle	CPCONLY	H01L2224/76184		1
H01L2224/76185	12	Means for physical vapour deposition [PVD]	CPCONLY	H01L2224/76185		1
H01L2224/76186	13	Means for sputtering, e.g. target	CPCONLY	H01L2224/76186		
H01L2224/76187	13	Means for evaporation	CPCONLY	H01L2224/76187		
H01L2224/76188	12	Means for chemical vapour deposition [CVD], e.g. for laser CVD	CPCONLY	H01L2224/76188		
H01L2224/76189	12	Means for plating, e.g. for electroplating, electroless plating	CPCONLY	H01L2224/76189		1
H01L2224/762	10	Protection means against electrical discharge	CPCONLY	H01L2224/762		
H01L2224/7625	10	Means for applying energy, e.g. heating means	CPCONLY	H01L2224/7625		4
H01L2224/76251	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76251		
H01L2224/76252	11	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76252		1
H01L2224/76253	11	adapted for localised heating	CPCONLY	H01L2224/76253		
H01L2224/7626	11	Polychromatic heating lamp	CPCONLY	H01L2224/7626		
H01L2224/76261	11	Laser	CPCONLY	H01L2224/76261		3
H01L2224/76262	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76262		
H01L2224/76263	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76263		1
H01L2224/76264	11	by induction heating, i.e. coils	CPCONLY	H01L2224/76264		
H01L2224/76265	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76265		4
H01L2224/76266	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76266		
H01L2224/76267	11	Flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/76267		
H01L2224/76268	11	Discharge electrode	CPCONLY	H01L2224/76268		1
H01L2224/76269	12	Shape of the discharge electrode	CPCONLY	H01L2224/76269		
H01L2224/7627	12	Material of the discharge electrode	CPCONLY	H01L2224/7627		
H01L2224/76271	12	Circuitry of the discharge electrode	CPCONLY	H01L2224/76271		
H01L2224/76272	11	Oven	CPCONLY	H01L2224/76272		3
H01L2224/7628	11	Resistance welding electrodes, i.e. for ohmic heating	CPCONLY	H01L2224/7628		
H01L2224/76281	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76281		
H01L2224/76282	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76282		
H01L2224/76283	11	by infrared heating, e.g. infrared heating lamp	CPCONLY	H01L2224/76283		1
H01L2224/763	11	by means of pressure	CPCONLY	H01L2224/763		6
H01L2224/76301	12	Pressing head	CPCONLY	H01L2224/76301		4
H01L2224/76302	13	Shape	CPCONLY	H01L2224/76302		
H01L2224/76303	14	of the pressing surface	CPCONLY	H01L2224/76303		
H01L2224/76304	15	being curved	CPCONLY	H01L2224/76304		3
H01L2224/76305	15	comprising protrusions	CPCONLY	H01L2224/76305		
H01L2224/7631	14	of other parts	CPCONLY	H01L2224/7631		
H01L2224/76312	13	Material	CPCONLY	H01L2224/76312		
H01L2224/76313	13	Removable pressing head	CPCONLY	H01L2224/76313		2
H01L2224/76314	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/76314		
H01L2224/76315	14	Elastomer inlay	CPCONLY	H01L2224/76315		
H01L2224/76316	15	with retaining mechanisms	CPCONLY	H01L2224/76316		
H01L2224/76317	14	Removable auxiliary member	CPCONLY	H01L2224/76317		
H01L2224/76318	14	Shape of the auxiliary member	CPCONLY	H01L2224/76318		
H01L2224/7632	14	Material of the auxiliary member	CPCONLY	H01L2224/7632		
H01L2224/76343	12	by ultrasonic vibrations	CPCONLY	H01L2224/76343		
H01L2224/76344	13	Eccentric cams	CPCONLY	H01L2224/76344		
H01L2224/76345	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76345		
H01L2224/76346	14	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76346		
H01L2224/76347	13	Piezoelectric transducers	CPCONLY	H01L2224/76347		1
H01L2224/76348	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76348		
H01L2224/76349	14	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76349		
H01L2224/7635	13	Stable and mobile yokes	CPCONLY	H01L2224/7635		
H01L2224/76351	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76351		
H01L2224/76352	14	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76352		
H01L2224/76353	13	Ultrasonic horns	CPCONLY	H01L2224/76353		
H01L2224/76354	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76354		
H01L2224/76355	14	Design, e.g. of the wave guide	CPCONLY	H01L2224/76355		
H01L2224/765	10	Cooling means	CPCONLY	H01L2224/765		2
H01L2224/76501	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76501		1
H01L2224/76502	11	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76502		
H01L2224/7655	10	Mechanical means, e.g. for planarising, pressing, stamping	CPCONLY	H01L2224/7655		5
H01L2224/76552	11	for drilling	CPCONLY	H01L2224/76552		3
H01L2224/76554	11	for abrasive blasting, e.g. sand blasting, wet blasting, hydro-blasting, dry ice blasting	CPCONLY	H01L2224/76554		
H01L2224/766	10	Means for supplying the material of the interconnect	CPCONLY	H01L2224/766		3
H01L2224/76601	11	Storing means	CPCONLY	H01L2224/76601		
H01L2224/76611	11	Feeding means	CPCONLY	H01L2224/76611		1
H01L2224/76621	11	Holding means	CPCONLY	H01L2224/76621		1
H01L2224/7665	10	Means for transporting the components to be connected	CPCONLY	H01L2224/7665		34
H01L2224/76651	11	Belt conveyor	CPCONLY	H01L2224/76651		1
H01L2224/76652	11	Chain conveyor	CPCONLY	H01L2224/76652		
H01L2224/76653	11	Vibrating conveyor	CPCONLY	H01L2224/76653		
H01L2224/76654	11	Pneumatic conveyor	CPCONLY	H01L2224/76654		
H01L2224/76655	11	in a fluid	CPCONLY	H01L2224/76655		2
H01L2224/767	10	Means for aligning	CPCONLY	H01L2224/767		6
H01L2224/76701	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76701		5
H01L2224/76702	11	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76702		3
H01L2224/76703	11	Mechanical holding means	CPCONLY	H01L2224/76703		3
H01L2224/76704	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76704		2
H01L2224/76705	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76705		
H01L2224/76723	11	Electrostatic holding means	CPCONLY	H01L2224/76723		
H01L2224/76724	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76724		
H01L2224/76725	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76725		
H01L2224/76733	11	Magnetic holding means	CPCONLY	H01L2224/76733		3
H01L2224/76734	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76734		
H01L2224/76735	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76735		1
H01L2224/76743	11	Suction holding means	CPCONLY	H01L2224/76743		3
H01L2224/76744	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76744		6
H01L2224/76745	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76745		
H01L2224/76753	11	Means for optical alignment, e.g. sensors	CPCONLY	H01L2224/76753		19
H01L2224/76754	11	Guiding structures	CPCONLY	H01L2224/76754		2
H01L2224/76755	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/76755		
H01L2224/76756	12	in the upper part of the bonding apparatus	CPCONLY	H01L2224/76756		
H01L2224/768	10	Means for moving parts	CPCONLY	H01L2224/768		
H01L2224/76801	11	Lower part of the bonding apparatus, e.g. XY table	CPCONLY	H01L2224/76801		2
H01L2224/76802	12	Rotational mechanism	CPCONLY	H01L2224/76802		2
H01L2224/76803	13	Pivoting mechanism	CPCONLY	H01L2224/76803		
H01L2224/76804	12	Translational mechanism	CPCONLY	H01L2224/76804		
H01L2224/76821	11	Upper part of the bonding apparatus, i.e. bonding head	CPCONLY	H01L2224/76821		1
H01L2224/76822	12	Rotational mechanism	CPCONLY	H01L2224/76822		
H01L2224/76823	13	Pivoting mechanism	CPCONLY	H01L2224/76823		
H01L2224/76824	12	Translational mechanism	CPCONLY	H01L2224/76824		
H01L2224/76841	11	of the bonding head	CPCONLY	H01L2224/76841		1
H01L2224/76842	12	Rotational mechanism	CPCONLY	H01L2224/76842		
H01L2224/76843	13	Pivoting mechanism	CPCONLY	H01L2224/76843		
H01L2224/769	10	Means for monitoring the connection process	CPCONLY	H01L2224/769		5
H01L2224/76901	11	using a computer, e.g. fully- or semi-automatic bonding	CPCONLY	H01L2224/76901		7
H01L2224/7692	11	Load or pressure adjusting means, e.g. sensors	CPCONLY	H01L2224/7692		4
H01L2224/76925	11	Vibration adjusting means, e.g. sensors	CPCONLY	H01L2224/76925		
H01L2224/7695	10	Means for forming additional members	CPCONLY	H01L2224/7695		2
H01L2224/7698	10	specially adapted for batch processes	CPCONLY	H01L2224/7698		9
H01L2224/76981	10	Apparatus chuck	CPCONLY	H01L2224/76981		2
H01L2224/76982	11	Shape	CPCONLY	H01L2224/76982		
H01L2224/76983	12	of the mounting surface	CPCONLY	H01L2224/76983		1
H01L2224/76984	12	of other portions	CPCONLY	H01L2224/76984		1
H01L2224/76985	11	Material	CPCONLY	H01L2224/76985		
H01L2224/76986	11	Auxiliary members on the pressing surface	CPCONLY	H01L2224/76986		
H01L2224/76987	12	Shape of the auxiliary member	CPCONLY	H01L2224/76987		1
H01L2224/76988	12	Material of the auxiliary member	CPCONLY	H01L2224/76988		1
H01L2224/77	9	Apparatus for connecting with strap connectors	CPCONLY	H01L2224/77		36
H01L2224/77001	10	Calibration means	CPCONLY	H01L2224/77001		1
H01L2224/7701	10	Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma	CPCONLY	H01L2224/7701		2
H01L2224/771	10	Means for controlling the bonding environment, e.g. valves, vacuum pumps	CPCONLY	H01L2224/771		
H01L2224/77101	11	Chamber	CPCONLY	H01L2224/77101		1
H01L2224/77102	12	Vacuum chamber	CPCONLY	H01L2224/77102		2
H01L2224/7711	12	High pressure chamber	CPCONLY	H01L2224/7711		1
H01L2224/7715	10	Means for applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/7715		5
H01L2224/77151	11	Means for direct writing	CPCONLY	H01L2224/77151		
H01L2224/77152	12	Syringe	CPCONLY	H01L2224/77152		
H01L2224/77153	13	integrated into the capillary or wedge	CPCONLY	H01L2224/77153		1
H01L2224/77155	12	Jetting means, e.g. ink jet	CPCONLY	H01L2224/77155		
H01L2224/77158	12	including a laser	CPCONLY	H01L2224/77158		
H01L2224/77161	11	Means for screen printing, e.g. roller, squeegee, screen stencil	CPCONLY	H01L2224/77161		1
H01L2224/7717	11	Means for applying a preform, e.g. laminator	CPCONLY	H01L2224/7717		
H01L2224/77171	12	including a vacuum-bag	CPCONLY	H01L2224/77171		
H01L2224/7718	11	Means for blanket deposition	CPCONLY	H01L2224/7718		
H01L2224/77181	12	for spin coating, i.e. spin coater	CPCONLY	H01L2224/77181		
H01L2224/77182	12	for curtain coating	CPCONLY	H01L2224/77182		
H01L2224/77183	12	for immersion coating, i.e. bath	CPCONLY	H01L2224/77183		
H01L2224/77184	12	for spray coating, i.e. nozzle	CPCONLY	H01L2224/77184		1
H01L2224/77185	12	Means for physical vapour deposition [PVD], e.g. evaporation, sputtering	CPCONLY	H01L2224/77185		2
H01L2224/77186	12	Means for sputtering, e.g. target	CPCONLY	H01L2224/77186		
H01L2224/77187	12	Means for evaporation	CPCONLY	H01L2224/77187		
H01L2224/77188	12	Means for chemical vapour deposition [CVD], e.g. for laser CVD	CPCONLY	H01L2224/77188		
H01L2224/77189	12	Means for plating, e.g. for electroplating, electroless plating	CPCONLY	H01L2224/77189		
H01L2224/772	10	Protection means against electrical discharge	CPCONLY	H01L2224/772		
H01L2224/7725	10	Means for applying energy, e.g. heating means	CPCONLY	H01L2224/7725		1
H01L2224/77251	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77251		2
H01L2224/77252	11	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77252		4
H01L2224/77253	11	adapted for localised heating	CPCONLY	H01L2224/77253		
H01L2224/7726	11	Polychromatic heating lamp	CPCONLY	H01L2224/7726		
H01L2224/77261	11	Laser	CPCONLY	H01L2224/77261		2
H01L2224/77262	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77262		
H01L2224/77263	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77263		3
H01L2224/77264	11	by induction heating, i.e. coils	CPCONLY	H01L2224/77264		
H01L2224/77265	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77265		
H01L2224/77266	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77266		
H01L2224/77267	11	Flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/77267		
H01L2224/77268	11	Discharge electrode	CPCONLY	H01L2224/77268		1
H01L2224/77269	12	Shape of the discharge electrode	CPCONLY	H01L2224/77269		
H01L2224/7727	12	Material of the discharge electrode	CPCONLY	H01L2224/7727		
H01L2224/77271	12	Circuitry of the discharge electrode	CPCONLY	H01L2224/77271		
H01L2224/77272	11	Oven	CPCONLY	H01L2224/77272		52
H01L2224/7728	11	Resistance welding electrodes, i.e. for ohmic heating	CPCONLY	H01L2224/7728		
H01L2224/77281	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77281		1
H01L2224/77282	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77282		
H01L2224/77283	11	by infrared heating, e.g. infrared heating lamp	CPCONLY	H01L2224/77283		
H01L2224/773	11	by means of pressure	CPCONLY	H01L2224/773		11
H01L2224/77313	12	Wedge	CPCONLY	H01L2224/77313		1
H01L2224/77314	13	Shape	CPCONLY	H01L2224/77314		
H01L2224/77315	14	of the pressing surface, e.g. tip or head	CPCONLY	H01L2224/77315		7
H01L2224/77316	15	comprising protrusions	CPCONLY	H01L2224/77316		7
H01L2224/77317	14	of other portions	CPCONLY	H01L2224/77317		1
H01L2224/77318	15	inside the capillary	CPCONLY	H01L2224/77318		1
H01L2224/77319	15	outside the capillary	CPCONLY	H01L2224/77319		1
H01L2224/7732	13	Removable wedge	CPCONLY	H01L2224/7732		
H01L2224/77321	13	Material	CPCONLY	H01L2224/77321		2
H01L2224/77325	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/77325		1
H01L2224/77326	14	Removable auxiliary member	CPCONLY	H01L2224/77326		1
H01L2224/77327	14	Shape of the auxiliary member	CPCONLY	H01L2224/77327		
H01L2224/77328	14	Material of the auxiliary member	CPCONLY	H01L2224/77328		3
H01L2224/77343	12	by ultrasonic vibrations	CPCONLY	H01L2224/77343		8
H01L2224/77344	13	Eccentric cams	CPCONLY	H01L2224/77344		
H01L2224/77345	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77345		
H01L2224/77346	14	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77346		
H01L2224/77347	13	Piezoelectric transducers	CPCONLY	H01L2224/77347		1
H01L2224/77348	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77348		
H01L2224/77349	14	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77349		
H01L2224/7735	13	Stable and mobile yokes	CPCONLY	H01L2224/7735		
H01L2224/77351	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77351		
H01L2224/77352	14	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77352		1
H01L2224/77353	13	Ultrasonic horns	CPCONLY	H01L2224/77353		3
H01L2224/77354	14	in the lower part of the bonding apparatus, e.g. in the mounting chuck	CPCONLY	H01L2224/77354		
H01L2224/77355	14	Design, e.g. of the wave guide	CPCONLY	H01L2224/77355		
H01L2224/775	10	Cooling means	CPCONLY	H01L2224/775		
H01L2224/77501	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77501		
H01L2224/77502	11	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77502		
H01L2224/7755	10	Mechanical means, e.g. for severing, pressing, stamping	CPCONLY	H01L2224/7755		6
H01L2224/776	10	Means for supplying the connector to be connected in the bonding apparatus	CPCONLY	H01L2224/776		2
H01L2224/77601	11	Storing means	CPCONLY	H01L2224/77601		1
H01L2224/77611	11	Feeding means	CPCONLY	H01L2224/77611		5
H01L2224/77621	11	Holding means, e.g. wire clampers	CPCONLY	H01L2224/77621		5
H01L2224/77631	12	Means for wire tension adjustments	CPCONLY	H01L2224/77631		
H01L2224/7765	10	Means for transporting the components to be connected	CPCONLY	H01L2224/7765		2
H01L2224/77651	11	Belt conveyor	CPCONLY	H01L2224/77651		4
H01L2224/77652	11	Chain conveyor	CPCONLY	H01L2224/77652		
H01L2224/77653	11	Vibrating conveyor	CPCONLY	H01L2224/77653		
H01L2224/77654	11	Pneumatic conveyor	CPCONLY	H01L2224/77654		
H01L2224/77655	11	in a fluid	CPCONLY	H01L2224/77655		
H01L2224/777	10	Means for aligning	CPCONLY	H01L2224/777		2
H01L2224/77701	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77701		2
H01L2224/77702	11	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77702		3
H01L2224/77703	11	Mechanical holding means	CPCONLY	H01L2224/77703		7
H01L2224/77704	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77704		5
H01L2224/77705	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77705		3
H01L2224/77723	11	Electrostatic holding means	CPCONLY	H01L2224/77723		
H01L2224/77724	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77724		
H01L2224/77725	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77725		
H01L2224/77733	11	Magnetic holding means	CPCONLY	H01L2224/77733		1
H01L2224/77734	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77734		
H01L2224/77735	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77735		1
H01L2224/77743	11	Suction holding means	CPCONLY	H01L2224/77743		
H01L2224/77744	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77744		1
H01L2224/77745	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77745		10
H01L2224/77753	11	Means for optical alignment, e.g. sensors	CPCONLY	H01L2224/77753		1
H01L2224/77754	11	Guiding structures	CPCONLY	H01L2224/77754		6
H01L2224/77755	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/77755		5
H01L2224/77756	12	in the upper part of the bonding apparatus, e.g. in the wedge	CPCONLY	H01L2224/77756		
H01L2224/778	10	Means for moving parts	CPCONLY	H01L2224/778		
H01L2224/77801	11	Lower part of the bonding apparatus, e.g. XY table	CPCONLY	H01L2224/77801		
H01L2224/77802	12	Rotational mechanism	CPCONLY	H01L2224/77802		1
H01L2224/77803	13	Pivoting mechanism	CPCONLY	H01L2224/77803		
H01L2224/77804	12	Translational mechanism	CPCONLY	H01L2224/77804		
H01L2224/77821	11	Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge	CPCONLY	H01L2224/77821		1
H01L2224/77822	12	Rotational mechanism	CPCONLY	H01L2224/77822		1
H01L2224/77823	13	Pivoting mechanism	CPCONLY	H01L2224/77823		
H01L2224/77824	12	Translational mechanism	CPCONLY	H01L2224/77824		
H01L2224/77841	11	of the pressing portion, e.g. tip or head	CPCONLY	H01L2224/77841		
H01L2224/77842	12	Rotational mechanism	CPCONLY	H01L2224/77842		
H01L2224/77843	13	Pivoting mechanism	CPCONLY	H01L2224/77843		
H01L2224/779	10	Means for monitoring the connection process	CPCONLY	H01L2224/779		4
H01L2224/77901	11	using a computer, e.g. fully- or semi-automatic bonding	CPCONLY	H01L2224/77901		2
H01L2224/7792	11	Load or pressure adjusting means, e.g. sensors	CPCONLY	H01L2224/7792		1
H01L2224/77925	11	Vibration adjusting means, e.g. sensors	CPCONLY	H01L2224/77925		
H01L2224/7795	10	Means for forming additional members	CPCONLY	H01L2224/7795		1
H01L2224/7798	10	specially adapted for batch processes	CPCONLY	H01L2224/7798		7
H01L2224/77981	10	Apparatus chuck	CPCONLY	H01L2224/77981		
H01L2224/77982	11	Shape	CPCONLY	H01L2224/77982		
H01L2224/77983	12	of the mounting surface	CPCONLY	H01L2224/77983		2
H01L2224/77984	12	of other portions	CPCONLY	H01L2224/77984		
H01L2224/77985	11	Material	CPCONLY	H01L2224/77985		
H01L2224/77986	11	Auxiliary members on the pressing surface	CPCONLY	H01L2224/77986		
H01L2224/77987	12	Shape of the auxiliary member	CPCONLY	H01L2224/77987		
H01L2224/77988	12	Material of the auxiliary member	CPCONLY	H01L2224/77988		
H01L2224/78	9	Apparatus for connecting with wire connectors	CPCONLY	H01L2224/78		7917
H01L2224/78001	10	Calibration means	CPCONLY	H01L2224/78001		22
H01L2224/7801	10	Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma	CPCONLY	H01L2224/7801		120
H01L2224/781	10	Means for controlling the bonding environment, e.g. valves, vacuum pumps	CPCONLY	H01L2224/781		56
H01L2224/78101	11	Chamber	CPCONLY	H01L2224/78101		7
H01L2224/78102	12	Vacuum chamber	CPCONLY	H01L2224/78102		6
H01L2224/7811	12	High pressure chamber	CPCONLY	H01L2224/7811		
H01L2224/7815	10	Means for applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/7815		21
H01L2224/782	10	Protection means against electrical discharge	CPCONLY	H01L2224/782		3
H01L2224/7825	10	Means for applying energy, e.g. heating means	CPCONLY	H01L2224/7825		57
H01L2224/78251	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78251		215
H01L2224/78252	11	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78252		95
H01L2224/78253	11	adapted for localised heating	CPCONLY	H01L2224/78253		10
H01L2224/7826	11	Polychromatic heating lamp	CPCONLY	H01L2224/7826		3
H01L2224/78261	11	Laser	CPCONLY	H01L2224/78261		16
H01L2224/78262	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78262		2
H01L2224/78263	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78263		18
H01L2224/78264	11	by induction heating, i.e. coils	CPCONLY	H01L2224/78264		
H01L2224/78265	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78265		1
H01L2224/78266	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78266		7
H01L2224/78267	11	Flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/78267		15
H01L2224/78268	11	Discharge electrode	CPCONLY	H01L2224/78268		627
H01L2224/78269	12	Shape of the discharge electrode	CPCONLY	H01L2224/78269		8
H01L2224/7827	12	Material of the discharge electrode	CPCONLY	H01L2224/7827		2
H01L2224/78271	12	Circuitry of the discharge electrode	CPCONLY	H01L2224/78271		33
H01L2224/78272	11	Oven	CPCONLY	H01L2224/78272		2
H01L2224/7828	11	Resistance welding electrodes, i.e. for ohmic heating	CPCONLY	H01L2224/7828		5
H01L2224/78281	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78281		6
H01L2224/78282	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78282		51
H01L2224/78283	11	by infrared heating, e.g. infrared heating lamp	CPCONLY	H01L2224/78283		3
H01L2224/783	11	by means of pressure	CPCONLY	H01L2224/783		16
H01L2224/78301	12	Capillary	CPCONLY	H01L2224/78301		5872
H01L2224/78302	13	Shape	CPCONLY	H01L2224/78302		603
H01L2224/78303	14	of the pressing surface, e.g. tip or head	CPCONLY	H01L2224/78303		109
H01L2224/78304	15	comprising protrusions	CPCONLY	H01L2224/78304		23
H01L2224/78305	14	of other portions	CPCONLY	H01L2224/78305		4
H01L2224/78306	15	inside the capillary	CPCONLY	H01L2224/78306		32
H01L2224/78307	15	outside the capillary	CPCONLY	H01L2224/78307		56
H01L2224/78308	13	Removable capillary	CPCONLY	H01L2224/78308		124
H01L2224/78309	13	Material	CPCONLY	H01L2224/78309		31
H01L2224/7831	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/7831		1
H01L2224/78311	14	Removable auxiliary member	CPCONLY	H01L2224/78311		
H01L2224/78312	14	Shape of the auxiliary member	CPCONLY	H01L2224/78312		1
H01L2224/78313	12	Wedge	CPCONLY	H01L2224/78313		1131
H01L2224/78314	13	Shape	CPCONLY	H01L2224/78314		27
H01L2224/78315	14	of the pressing surface, e.g. tip or head	CPCONLY	H01L2224/78315		88
H01L2224/78316	15	comprising protrusions	CPCONLY	H01L2224/78316		17
H01L2224/78317	14	of other portions	CPCONLY	H01L2224/78317		2
H01L2224/78318	15	inside the capillary	CPCONLY	H01L2224/78318		381
H01L2224/78319	15	outside the capillary	CPCONLY	H01L2224/78319		4
H01L2224/7832	13	Removable wedge	CPCONLY	H01L2224/7832		1
H01L2224/78321	13	Material	CPCONLY	H01L2224/78321		9
H01L2224/78325	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/78325		
H01L2224/78326	14	Removable auxiliary member	CPCONLY	H01L2224/78326		
H01L2224/78327	14	Shape of the auxiliary member	CPCONLY	H01L2224/78327		
H01L2224/78328	14	Material of the auxiliary member	CPCONLY	H01L2224/78328		2
H01L2224/78343	12	by ultrasonic vibrations	CPCONLY	H01L2224/78343		77
H01L2224/78344	13	Eccentric cams	CPCONLY	H01L2224/78344		169
H01L2224/78345	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78345		
H01L2224/78346	14	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78346		1
H01L2224/78347	13	Piezoelectric transducers	CPCONLY	H01L2224/78347		24
H01L2224/78348	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78348		
H01L2224/78349	14	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78349		27
H01L2224/7835	13	Stable and mobile yokes	CPCONLY	H01L2224/7835		24
H01L2224/78351	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78351		
H01L2224/78352	14	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78352		3
H01L2224/78353	13	Ultrasonic horns	CPCONLY	H01L2224/78353		44
H01L2224/78354	14	in the lower part of the bonding apparatus, e.g. in the mounting chuck	CPCONLY	H01L2224/78354		2
H01L2224/78355	14	Design, e.g. of the wave guide	CPCONLY	H01L2224/78355		3
H01L2224/785	10	Cooling means	CPCONLY	H01L2224/785		3
H01L2224/78501	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78501		6
H01L2224/78502	11	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78502		3
H01L2224/7855	10	Mechanical means, e.g. for severing, pressing, stamping	CPCONLY	H01L2224/7855		131
H01L2224/786	10	Means for supplying the connector to be connected in the bonding apparatus	CPCONLY	H01L2224/786		824
H01L2224/78601	11	Storing means	CPCONLY	H01L2224/78601		34
H01L2224/78611	11	Feeding means	CPCONLY	H01L2224/78611		64
H01L2224/78621	11	Holding means, e.g. wire clampers	CPCONLY	H01L2224/78621		261
H01L2224/78631	12	Means for wire tension adjustments	CPCONLY	H01L2224/78631		63
H01L2224/7865	10	Means for transporting the components to be connected	CPCONLY	H01L2224/7865		224
H01L2224/78651	11	Belt conveyor	CPCONLY	H01L2224/78651		8
H01L2224/78652	11	Chain conveyor	CPCONLY	H01L2224/78652		
H01L2224/78653	11	Vibrating conveyor	CPCONLY	H01L2224/78653		
H01L2224/78654	11	Pneumatic conveyor	CPCONLY	H01L2224/78654		1
H01L2224/78655	11	in a fluid	CPCONLY	H01L2224/78655		
H01L2224/787	10	Means for aligning	CPCONLY	H01L2224/787		10
H01L2224/78701	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78701		13
H01L2224/78702	11	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78702		13
H01L2224/78703	11	Mechanical holding means	CPCONLY	H01L2224/78703		414
H01L2224/78704	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78704		49
H01L2224/78705	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78705		14
H01L2224/78723	11	Electrostatic holding means	CPCONLY	H01L2224/78723		
H01L2224/78724	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78724		
H01L2224/78725	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78725		1
H01L2224/78733	11	Magnetic holding means	CPCONLY	H01L2224/78733		
H01L2224/78734	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78734		3
H01L2224/78735	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78735		3
H01L2224/78743	11	Suction holding means	CPCONLY	H01L2224/78743		44
H01L2224/78744	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78744		226
H01L2224/78745	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78745		14
H01L2224/78753	11	Means for optical alignment, e.g. sensors	CPCONLY	H01L2224/78753		27
H01L2224/78754	11	Guiding structures	CPCONLY	H01L2224/78754		3
H01L2224/78755	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/78755		1
H01L2224/78756	12	in the upper part of the bonding apparatus, e.g. in the capillary or wedge	CPCONLY	H01L2224/78756		9
H01L2224/788	10	Means for moving parts	CPCONLY	H01L2224/788		8
H01L2224/78801	11	Lower part of the bonding apparatus, e.g. XY table	CPCONLY	H01L2224/78801		178
H01L2224/78802	12	Rotational mechanism	CPCONLY	H01L2224/78802		7
H01L2224/78803	13	Pivoting mechanism	CPCONLY	H01L2224/78803		6
H01L2224/78804	12	Translational mechanism	CPCONLY	H01L2224/78804		14
H01L2224/78821	11	Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge	CPCONLY	H01L2224/78821		25
H01L2224/78822	12	Rotational mechanism	CPCONLY	H01L2224/78822		138
H01L2224/78823	13	Pivoting mechanism	CPCONLY	H01L2224/78823		76
H01L2224/78824	12	Translational mechanism	CPCONLY	H01L2224/78824		19
H01L2224/78841	11	of the pressing portion, e.g. tip or head	CPCONLY	H01L2224/78841		6
H01L2224/78842	12	Rotational mechanism	CPCONLY	H01L2224/78842		3
H01L2224/78843	13	Pivoting mechanism	CPCONLY	H01L2224/78843		
H01L2224/789	10	Means for monitoring the connection process	CPCONLY	H01L2224/789		169
H01L2224/78901	11	using a computer, e.g. fully- or semi-automatic bonding	CPCONLY	H01L2224/78901		135
H01L2224/7892	11	Load or pressure adjusting means, e.g. sensors	CPCONLY	H01L2224/7892		25
H01L2224/78925	11	Vibration adjusting means, e.g. sensors	CPCONLY	H01L2224/78925		13
H01L2224/7895	10	Means for forming additional members	CPCONLY	H01L2224/7895		4
H01L2224/7898	10	specially adapted for batch processes	CPCONLY	H01L2224/7898		23
H01L2224/78981	10	Apparatus chuck	CPCONLY	H01L2224/78981		16
H01L2224/78982	11	Shape	CPCONLY	H01L2224/78982		4
H01L2224/78983	12	of the mounting surface	CPCONLY	H01L2224/78983		7
H01L2224/78984	12	of other portions	CPCONLY	H01L2224/78984		2
H01L2224/78985	11	Material	CPCONLY	H01L2224/78985		2
H01L2224/78986	11	Auxiliary members on the pressing surface	CPCONLY	H01L2224/78986		1
H01L2224/78987	12	Shape of the auxiliary member	CPCONLY	H01L2224/78987		1
H01L2224/78988	12	Material of the auxiliary member	CPCONLY	H01L2224/78988		
H01L2224/79	9	Apparatus for Tape Automated Bonding [TAB]	CPCONLY	H01L2224/79		63
H01L2224/79001	10	Calibration means	CPCONLY	H01L2224/79001		1
H01L2224/7901	10	Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma	CPCONLY	H01L2224/7901		17
H01L2224/791	10	Means for controlling the bonding environment, e.g. valves, vacuum pumps	CPCONLY	H01L2224/791		
H01L2224/79101	11	Chamber	CPCONLY	H01L2224/79101		
H01L2224/79102	12	Vacuum chamber	CPCONLY	H01L2224/79102		2
H01L2224/7911	12	High pressure chamber	CPCONLY	H01L2224/7911		
H01L2224/7915	10	Means for applying permanent coating	CPCONLY	H01L2224/7915		
H01L2224/79151	11	Means for direct writing	CPCONLY	H01L2224/79151		
H01L2224/79152	12	Syringe	CPCONLY	H01L2224/79152		
H01L2224/79153	13	integrated into the pressing head	CPCONLY	H01L2224/79153		
H01L2224/79155	12	Jetting means, e.g. ink jet	CPCONLY	H01L2224/79155		2
H01L2224/79158	12	including a laser	CPCONLY	H01L2224/79158		
H01L2224/79161	11	Means for screen printing, e.g. roller, squeegee, screen stencil	CPCONLY	H01L2224/79161		1
H01L2224/7917	11	Means for applying a preform, e.g. laminator	CPCONLY	H01L2224/7917		
H01L2224/79171	12	including a vacuum-bag	CPCONLY	H01L2224/79171		
H01L2224/7918	11	Means for blanket deposition	CPCONLY	H01L2224/7918		
H01L2224/79181	12	for spin coating, i.e. spin coater	CPCONLY	H01L2224/79181		
H01L2224/79182	12	for curtain coating	CPCONLY	H01L2224/79182		
H01L2224/79183	12	for immersion coating, i.e. bath	CPCONLY	H01L2224/79183		
H01L2224/79184	12	for spray coating, i.e. nozzle	CPCONLY	H01L2224/79184		
H01L2224/79185	12	Means for physical vapour deposition [PVD], e.g. evaporation, sputtering	CPCONLY	H01L2224/79185		
H01L2224/79186	12	Means for sputtering, e.g. target	CPCONLY	H01L2224/79186		
H01L2224/79187	12	Means for evaporation	CPCONLY	H01L2224/79187		
H01L2224/79188	12	Means for chemical vapour deposition [CVD], e.g. for laser CVD	CPCONLY	H01L2224/79188		1
H01L2224/79189	12	Means for plating, e.g. for electroplating, electroless plating	CPCONLY	H01L2224/79189		
H01L2224/792	10	Protection means against electrical discharge	CPCONLY	H01L2224/792		
H01L2224/7925	10	Means for applying energy, e.g. heating means	CPCONLY	H01L2224/7925		
H01L2224/79251	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79251		3
H01L2224/79252	11	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79252		4
H01L2224/79253	11	adapted for localised heating	CPCONLY	H01L2224/79253		
H01L2224/7926	11	Polychromatic heating lamp	CPCONLY	H01L2224/7926		
H01L2224/79261	11	Laser	CPCONLY	H01L2224/79261		
H01L2224/79262	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79262		1
H01L2224/79263	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79263		
H01L2224/79264	11	by induction heating, i.e. coils	CPCONLY	H01L2224/79264		
H01L2224/79265	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79265		
H01L2224/79266	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79266		
H01L2224/79267	11	Flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/79267		
H01L2224/79268	11	Discharge electrode	CPCONLY	H01L2224/79268		
H01L2224/79269	12	Shape of the discharge electrode	CPCONLY	H01L2224/79269		
H01L2224/7927	12	Material of the discharge electrode	CPCONLY	H01L2224/7927		
H01L2224/79271	12	Circuitry of the discharge electrode	CPCONLY	H01L2224/79271		
H01L2224/79272	11	Oven	CPCONLY	H01L2224/79272		
H01L2224/7928	11	Resistance welding electrodes, i.e. for ohmic heating	CPCONLY	H01L2224/7928		
H01L2224/79281	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79281		1
H01L2224/79282	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79282		
H01L2224/79283	11	by infrared heating, e.g. infrared heating lamp	CPCONLY	H01L2224/79283		
H01L2224/793	11	by means of pressure	CPCONLY	H01L2224/793		4
H01L2224/79301	12	Pressing head	CPCONLY	H01L2224/79301		4
H01L2224/79302	13	Shape	CPCONLY	H01L2224/79302		
H01L2224/79303	14	of the pressing surface	CPCONLY	H01L2224/79303		2
H01L2224/79304	15	being curved	CPCONLY	H01L2224/79304		
H01L2224/79305	15	comprising protrusions	CPCONLY	H01L2224/79305		
H01L2224/7931	14	of other parts	CPCONLY	H01L2224/7931		1
H01L2224/79312	13	Material	CPCONLY	H01L2224/79312		1
H01L2224/79313	13	Removable pressing head	CPCONLY	H01L2224/79313		
H01L2224/79314	13	Auxiliary members on the pressing surface	CPCONLY	H01L2224/79314		2
H01L2224/79315	14	Elastomer inlay	CPCONLY	H01L2224/79315		4
H01L2224/79316	15	with retaining mechanisms	CPCONLY	H01L2224/79316		1
H01L2224/79317	14	Removable auxiliary member	CPCONLY	H01L2224/79317		3
H01L2224/79318	14	Shape of the auxiliary member	CPCONLY	H01L2224/79318		1
H01L2224/7932	14	Material of the auxiliary member	CPCONLY	H01L2224/7932		2
H01L2224/79343	12	by ultrasonic vibrations	CPCONLY	H01L2224/79343		2
H01L2224/79344	13	Eccentric cams	CPCONLY	H01L2224/79344		
H01L2224/79345	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79345		
H01L2224/79346	14	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79346		
H01L2224/79347	13	Piezoelectric transducers	CPCONLY	H01L2224/79347		1
H01L2224/79348	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79348		
H01L2224/79349	14	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79349		
H01L2224/7935	13	Stable and mobile yokes	CPCONLY	H01L2224/7935		
H01L2224/79351	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79351		
H01L2224/79352	14	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79352		
H01L2224/79353	13	Ultrasonic horns	CPCONLY	H01L2224/79353		
H01L2224/79354	14	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79354		
H01L2224/79355	14	Design, e.g. of the wave guide	CPCONLY	H01L2224/79355		
H01L2224/795	10	Cooling means	CPCONLY	H01L2224/795		
H01L2224/79501	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79501		
H01L2224/79502	11	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79502		
H01L2224/7955	10	Mechanical means, e.g. for pressing, stamping	CPCONLY	H01L2224/7955		3
H01L2224/796	10	Means for supplying the connector to be connected in the bonding apparatus	CPCONLY	H01L2224/796		
H01L2224/79601	11	Storing means	CPCONLY	H01L2224/79601		
H01L2224/79611	11	Feeding means	CPCONLY	H01L2224/79611		2
H01L2224/79621	11	Holding means	CPCONLY	H01L2224/79621		1
H01L2224/7965	10	Means for transporting the components to be connected	CPCONLY	H01L2224/7965		30
H01L2224/79651	11	Belt conveyor	CPCONLY	H01L2224/79651		1
H01L2224/79652	11	Chain conveyor	CPCONLY	H01L2224/79652		1
H01L2224/79653	11	Vibrating conveyor	CPCONLY	H01L2224/79653		
H01L2224/79654	11	Pneumatic conveyor	CPCONLY	H01L2224/79654		
H01L2224/79655	11	in a fluid	CPCONLY	H01L2224/79655		
H01L2224/797	10	Means for aligning	CPCONLY	H01L2224/797		1
H01L2224/79701	11	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79701		1
H01L2224/79702	11	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79702		
H01L2224/79703	11	Mechanical holding means	CPCONLY	H01L2224/79703		1
H01L2224/79704	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79704		
H01L2224/79705	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79705		
H01L2224/79723	11	Electrostatic holding means	CPCONLY	H01L2224/79723		
H01L2224/79724	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79724		
H01L2224/79725	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79725		
H01L2224/79733	11	Magnetic holding means	CPCONLY	H01L2224/79733		
H01L2224/79734	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79734		
H01L2224/79735	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79735		1
H01L2224/79743	11	Suction holding means	CPCONLY	H01L2224/79743		
H01L2224/79744	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79744		
H01L2224/79745	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79745		1
H01L2224/79753	11	Means for optical alignment, e.g. sensors	CPCONLY	H01L2224/79753		2
H01L2224/79754	11	Guiding structures	CPCONLY	H01L2224/79754		
H01L2224/79755	12	in the lower part of the bonding apparatus, e.g. in the apparatus chuck	CPCONLY	H01L2224/79755		
H01L2224/79756	12	in the upper part of the bonding apparatus, e.g. in the pressing head	CPCONLY	H01L2224/79756		
H01L2224/798	10	Means for moving parts	CPCONLY	H01L2224/798		
H01L2224/79801	11	Lower part of the bonding apparatus, e.g. XY table	CPCONLY	H01L2224/79801		
H01L2224/79802	12	Rotational mechanism	CPCONLY	H01L2224/79802		
H01L2224/79803	13	Pivoting mechanism	CPCONLY	H01L2224/79803		
H01L2224/79804	12	Translational mechanism	CPCONLY	H01L2224/79804		
H01L2224/79821	11	Upper part of the bonding apparatus, i.e. pressing head	CPCONLY	H01L2224/79821		1
H01L2224/79822	12	Rotational mechanism	CPCONLY	H01L2224/79822		
H01L2224/79823	13	Pivoting mechanism	CPCONLY	H01L2224/79823		
H01L2224/79824	12	Translational mechanism	CPCONLY	H01L2224/79824		
H01L2224/79841	11	of the pressing head	CPCONLY	H01L2224/79841		
H01L2224/79842	12	Rotational mechanism	CPCONLY	H01L2224/79842		
H01L2224/79843	13	Pivoting mechanism	CPCONLY	H01L2224/79843		
H01L2224/799	10	Means for monitoring the connection process	CPCONLY	H01L2224/799		10
H01L2224/79901	11	using a computer, e.g. fully- or semi-automatic bonding	CPCONLY	H01L2224/79901		1
H01L2224/7992	11	Load or pressure adjusting means, e.g. sensors	CPCONLY	H01L2224/7992		1
H01L2224/79925	11	Vibration adjusting means, e.g. sensors	CPCONLY	H01L2224/79925		
H01L2224/7995	10	Means for forming additional members	CPCONLY	H01L2224/7995		
H01L2224/7998	10	specially adapted for batch processes	CPCONLY	H01L2224/7998		1
H01L2224/79981	10	Apparatus chuck	CPCONLY	H01L2224/79981		
H01L2224/79982	11	Shape	CPCONLY	H01L2224/79982		
H01L2224/79983	12	of the mounting surface	CPCONLY	H01L2224/79983		1
H01L2224/79984	12	of other portions	CPCONLY	H01L2224/79984		
H01L2224/79985	11	Material	CPCONLY	H01L2224/79985		2
H01L2224/79986	11	Auxiliary members on the pressing surface	CPCONLY	H01L2224/79986		
H01L2224/79987	12	Shape of the auxiliary member	CPCONLY	H01L2224/79987		1
H01L2224/79988	12	Material of the auxiliary member	CPCONLY	H01L2224/79988		2
H01L2224/7999	9	for disconnecting	CPCONLY	H01L2224/7999		84
H01L2224/80	8	Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected	CPCONLY	H01L2224/80		593
H01L2224/80001	9	by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding	CPCONLY	H01L2224/80001		879
H01L2224/80003	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/80003		16
H01L2224/80004	11	being a removable or sacrificial coating	CPCONLY	H01L2224/80004		77
H01L2224/80006	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/80006		469
H01L2224/80007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for protecting the bonding area during or after the bonding process	CPCONLY	H01L2224/80007		38
H01L2224/80009	10	Pre-treatment of the bonding area	CPCONLY	H01L2224/80009		82
H01L2224/8001	11	Cleaning the bonding area, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8001		97
H01L2224/80011	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/80011		102
H01L2224/80012	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/80012		31
H01L2224/80013	12	Plasma cleaning	CPCONLY	H01L2224/80013		262
H01L2224/80014	12	Thermal cleaning, e.g. decomposition, sublimation	CPCONLY	H01L2224/80014		6
H01L2224/80019	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8001&#160;-&#160;H01L2224/80014	CPCONLY	H01L2224/80019		11
H01L2224/8002	11	Applying permanent coating to the bonding area in the bonding apparatus, e.g. in-situ coating	CPCONLY	H01L2224/8002		24
H01L2224/80024	11	Applying flux to the bonding area in the bonding apparatus	CPCONLY	H01L2224/80024		10
H01L2224/8003	11	Reshaping the bonding area in the bonding apparatus, e.g. flattening the bonding area	CPCONLY	H01L2224/8003		57
H01L2224/80031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/80031		57
H01L2224/80035	12	by heating means	CPCONLY	H01L2224/80035		28
H01L2224/80037	13	using a polychromatic heating lamp	CPCONLY	H01L2224/80037		
H01L2224/80039	13	using a laser	CPCONLY	H01L2224/80039		5
H01L2224/80041	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/80041		1
H01L2224/80047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/80047		56
H01L2224/80048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/80048		58
H01L2224/80051	11	Forming additional members	CPCONLY	H01L2224/80051		11
H01L2224/80052	10	Detaching bonding areas, e.g. after testing	CPCONLY	H01L2224/80052		9
H01L2224/80053	10	Bonding environment	CPCONLY	H01L2224/80053		2
H01L2224/80054	11	Composition of the atmosphere	CPCONLY	H01L2224/80054		6
H01L2224/80055	12	being oxidating	CPCONLY	H01L2224/80055		12
H01L2224/80065	12	being reducing	CPCONLY	H01L2224/80065		16
H01L2224/80075	12	being inert	CPCONLY	H01L2224/80075		52
H01L2224/80085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/80085		12
H01L2224/8009	11	Vacuum	CPCONLY	H01L2224/8009		42
H01L2224/80091	11	Under pressure	CPCONLY	H01L2224/80091		24
H01L2224/80092	12	Atmospheric pressure	CPCONLY	H01L2224/80092		6
H01L2224/80093	12	Transient conditions, e.g. gas-flow	CPCONLY	H01L2224/80093		7
H01L2224/80095	11	Temperature settings	CPCONLY	H01L2224/80095		20
H01L2224/80096	12	Transient conditions	CPCONLY	H01L2224/80096		1
H01L2224/80097	13	Heating	CPCONLY	H01L2224/80097		241
H01L2224/80098	13	Cooling	CPCONLY	H01L2224/80098		5
H01L2224/80099	12	Ambient temperature	CPCONLY	H01L2224/80099		59
H01L2224/8011	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8011		5
H01L2224/8012	10	Aligning	CPCONLY	H01L2224/8012		39
H01L2224/80121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/80121		60
H01L2224/80122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/80122		8
H01L2224/80123	13	Shape or position of the body	CPCONLY	H01L2224/80123		12
H01L2224/80125	13	Bonding areas on the body	CPCONLY	H01L2224/80125		18
H01L2224/80127	13	Bonding areas outside the body	CPCONLY	H01L2224/80127		7
H01L2224/80129	13	Shape or position of the other item	CPCONLY	H01L2224/80129		9
H01L2224/8013	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8013		134
H01L2224/80132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/80132		88
H01L2224/80136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/80136		15
H01L2224/80138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/80138		3
H01L2224/80139	13	Guiding structures on the body	CPCONLY	H01L2224/80139		7
H01L2224/8014	13	Guiding structures outside the body	CPCONLY	H01L2224/8014		29
H01L2224/80141	13	Guiding structures both on and outside the body	CPCONLY	H01L2224/80141		42
H01L2224/80143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/80143		64
H01L2224/80148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/80148		3
H01L2224/80149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/80149		1
H01L2224/8015	13	Rotational movements	CPCONLY	H01L2224/8015		2
H01L2224/8016	13	Translational movements	CPCONLY	H01L2224/8016		7
H01L2224/80169	12	being the upper part of the bonding apparatus, i.e. bonding head	CPCONLY	H01L2224/80169		2
H01L2224/8017	13	Rotational movements	CPCONLY	H01L2224/8017		2
H01L2224/8018	13	Translational movements	CPCONLY	H01L2224/8018		9
H01L2224/8019	10	Arrangement of the bonding areas prior to mounting	CPCONLY	H01L2224/8019		13
H01L2224/80194	11	Lateral distribution of the bonding areas	CPCONLY	H01L2224/80194		18
H01L2224/802	10	Applying energy for connecting	CPCONLY	H01L2224/802		33
H01L2224/80201	11	Compression bonding	CPCONLY	H01L2224/80201		155
H01L2224/80203	12	Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding	CPCONLY	H01L2224/80203		301
H01L2224/80204	13	with a graded temperature profile	CPCONLY	H01L2224/80204		14
H01L2224/80205	12	Ultrasonic bonding	CPCONLY	H01L2224/80205		46
H01L2224/80206	13	Direction of oscillation	CPCONLY	H01L2224/80206		1
H01L2224/80207	13	Thermosonic bonding	CPCONLY	H01L2224/80207		7
H01L2224/80209	12	applying unidirectional static pressure	CPCONLY	H01L2224/80209		6
H01L2224/80211	12	applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid	CPCONLY	H01L2224/80211		3
H01L2224/80213	11	using a reflow oven	CPCONLY	H01L2224/80213		11
H01L2224/80215	12	with a graded temperature profile	CPCONLY	H01L2224/80215		1
H01L2224/8022	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8022		10
H01L2224/80222	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/80222		2
H01L2224/80224	12	using a laser	CPCONLY	H01L2224/80224		34
H01L2224/8023	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8023		5
H01L2224/80232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/80232		2
H01L2224/80234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/80234		2
H01L2224/80236	11	using electro-static corona discharge	CPCONLY	H01L2224/80236		2
H01L2224/80237	11	using an electron beam	CPCONLY	H01L2224/80237		
H01L2224/80238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/80238		
H01L2224/8034	10	Bonding interfaces of the bonding area	CPCONLY	H01L2224/8034		158
H01L2224/80345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/80345		111
H01L2224/80355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/80355		11
H01L2224/80357	11	being flush with the surface	CPCONLY	H01L2224/80357		763
H01L2224/80359	11	Material	CPCONLY	H01L2224/80359		44
H01L2224/8036	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8036		3
H01L2224/80365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/80365		86
H01L2224/80375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/80375		4
H01L2224/80379	11	Material	CPCONLY	H01L2224/80379		362
H01L2224/8038	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8038		2
H01L2224/80385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/80385		32
H01L2224/80395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/80395		5
H01L2224/80399	11	Material	CPCONLY	H01L2224/80399		7
H01L2224/804	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/804		13
H01L2224/80401	13	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/80401		1
H01L2224/80405	14	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/80405		2
H01L2224/80409	14	Indium [In] as principal constituent	CPCONLY	H01L2224/80409		7
H01L2224/80411	14	Tin [Sn] as principal constituent	CPCONLY	H01L2224/80411		18
H01L2224/80413	14	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/80413		1
H01L2224/80414	14	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/80414		1
H01L2224/80416	14	Lead [Pb] as principal constituent	CPCONLY	H01L2224/80416		3
H01L2224/80417	13	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/80417		3
H01L2224/80418	14	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/80418		2
H01L2224/8042	14	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8042		1
H01L2224/80423	14	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/80423		3
H01L2224/80424	14	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/80424		32
H01L2224/80438	13	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/80438		7
H01L2224/80439	14	Silver [Ag] as principal constituent	CPCONLY	H01L2224/80439		33
H01L2224/80444	14	Gold [Au] as principal constituent	CPCONLY	H01L2224/80444		39
H01L2224/80447	14	Copper [Cu] as principal constituent	CPCONLY	H01L2224/80447		82
H01L2224/80449	14	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/80449		5
H01L2224/80455	14	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/80455		29
H01L2224/80457	14	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/80457		11
H01L2224/8046	14	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8046		4
H01L2224/80463	13	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/80463		
H01L2224/80464	14	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/80464		13
H01L2224/80466	14	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/80466		24
H01L2224/80469	14	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/80469		8
H01L2224/8047	14	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8047		2
H01L2224/80471	14	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/80471		5
H01L2224/80472	14	Vanadium [V] as principal constituent	CPCONLY	H01L2224/80472		
H01L2224/80473	14	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/80473		1
H01L2224/80476	14	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/80476		4
H01L2224/80478	14	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/80478		1
H01L2224/80479	14	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/80479		
H01L2224/8048	14	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8048		5
H01L2224/80481	14	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/80481		13
H01L2224/80483	14	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/80483		1
H01L2224/80484	14	Tungsten [W] as principal constituent	CPCONLY	H01L2224/80484		17
H01L2224/80486	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/80486		32
H01L2224/80487	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/80487		9
H01L2224/80488	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/80488		9
H01L2224/8049	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8049		9
H01L2224/80491	13	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/80491		
H01L2224/80493	12	with a principal constituent of the material being a solid not provided for in groups H01L2224/804&#160;-&#160;H01L2224/80491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/80493		4
H01L2224/80494	12	with a principal constituent of the material being a liquid not provided for in groups H01L2224/804&#160;-&#160;H01L2224/80491	CPCONLY	H01L2224/80494		1
H01L2224/80495	12	with a principal constituent of the material being a gas not provided for in groups H01L2224/804&#160;-&#160;H01L2224/80491	CPCONLY	H01L2224/80495		
H01L2224/80498	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/80498		
H01L2224/80499	13	Material of the matrix	CPCONLY	H01L2224/80499		
H01L2224/805	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/805		
H01L2224/80501	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/80501		
H01L2224/80505	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/80505		
H01L2224/80509	16	Indium [In] as principal constituent	CPCONLY	H01L2224/80509		
H01L2224/80511	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/80511		
H01L2224/80513	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/80513		
H01L2224/80514	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/80514		
H01L2224/80516	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/80516		
H01L2224/80517	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/80517		
H01L2224/80518	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/80518		
H01L2224/8052	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8052		
H01L2224/80523	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/80523		
H01L2224/80524	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/80524		
H01L2224/80538	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/80538		
H01L2224/80539	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/80539		
H01L2224/80544	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/80544		
H01L2224/80547	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/80547		
H01L2224/80549	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/80549		
H01L2224/80555	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/80555		
H01L2224/80557	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/80557		
H01L2224/8056	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8056		
H01L2224/80563	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/80563		
H01L2224/80564	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/80564		
H01L2224/80566	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/80566		
H01L2224/80569	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/80569		
H01L2224/8057	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8057		
H01L2224/80571	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/80571		
H01L2224/80572	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/80572		
H01L2224/80573	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/80573		
H01L2224/80576	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/80576		
H01L2224/80578	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/80578		
H01L2224/80579	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/80579		
H01L2224/8058	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8058		
H01L2224/80581	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/80581		
H01L2224/80583	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/80583		
H01L2224/80584	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/80584		
H01L2224/80586	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/80586		
H01L2224/80587	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/80587		
H01L2224/80588	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/80588		
H01L2224/8059	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8059		2
H01L2224/80591	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/80591		
H01L2224/80593	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/805&#160;-&#160;H01L2224/80591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/80593		
H01L2224/80594	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/805&#160;-&#160;H01L2224/80591	CPCONLY	H01L2224/80594		1
H01L2224/80595	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/805&#160;-&#160;H01L2224/80591	CPCONLY	H01L2224/80595		
H01L2224/80598	13	Fillers	CPCONLY	H01L2224/80598		
H01L2224/80599	14	Base material	CPCONLY	H01L2224/80599		
H01L2224/806	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/806		1
H01L2224/80601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/80601		
H01L2224/80605	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/80605		
H01L2224/80609	17	Indium [In] as principal constituent	CPCONLY	H01L2224/80609		
H01L2224/80611	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/80611		
H01L2224/80613	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/80613		
H01L2224/80614	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/80614		
H01L2224/80616	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/80616		
H01L2224/80617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/80617		
H01L2224/80618	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/80618		
H01L2224/8062	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8062		
H01L2224/80623	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/80623		
H01L2224/80624	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/80624		
H01L2224/80638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/80638		
H01L2224/80639	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/80639		1
H01L2224/80644	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/80644		
H01L2224/80647	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/80647		1
H01L2224/80649	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/80649		
H01L2224/80655	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/80655		
H01L2224/80657	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/80657		
H01L2224/8066	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8066		
H01L2224/80663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/80663		
H01L2224/80664	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/80664		
H01L2224/80666	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/80666		
H01L2224/80669	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/80669		
H01L2224/8067	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8067		
H01L2224/80671	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/80671		
H01L2224/80672	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/80672		
H01L2224/80673	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/80673		
H01L2224/80676	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/80676		
H01L2224/80678	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/80678		
H01L2224/80679	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/80679		
H01L2224/8068	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8068		
H01L2224/80681	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/80681		
H01L2224/80683	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/80683		
H01L2224/80684	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/80684		
H01L2224/80686	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/80686		
H01L2224/80687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/80687		
H01L2224/80688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/80688		
H01L2224/8069	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8069		
H01L2224/80691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/80691		
H01L2224/80693	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/806&#160;-&#160;H01L2224/80691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/80693		
H01L2224/80694	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/806&#160;-&#160;H01L2224/80691	CPCONLY	H01L2224/80694		
H01L2224/80695	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/806&#160;-&#160;H01L2224/80691	CPCONLY	H01L2224/80695		
H01L2224/80698	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/80698		
H01L2224/80699	14	Coating material	CPCONLY	H01L2224/80699		
H01L2224/807	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/807		
H01L2224/80701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/80701		
H01L2224/80705	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/80705		
H01L2224/80709	17	Indium [In] as principal constituent	CPCONLY	H01L2224/80709		
H01L2224/80711	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/80711		
H01L2224/80713	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/80713		
H01L2224/80714	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/80714		
H01L2224/80716	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/80716		
H01L2224/80717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/80717		
H01L2224/80718	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/80718		
H01L2224/8072	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8072		
H01L2224/80723	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/80723		
H01L2224/80724	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/80724		
H01L2224/80738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/80738		
H01L2224/80739	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/80739		1
H01L2224/80744	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/80744		
H01L2224/80747	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/80747		
H01L2224/80749	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/80749		
H01L2224/80755	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/80755		1
H01L2224/80757	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/80757		1
H01L2224/8076	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8076		
H01L2224/80763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/80763		
H01L2224/80764	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/80764		
H01L2224/80766	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/80766		
H01L2224/80769	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/80769		
H01L2224/8077	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8077		
H01L2224/80771	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/80771		
H01L2224/80772	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/80772		1
H01L2224/80773	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/80773		
H01L2224/80776	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/80776		
H01L2224/80778	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/80778		
H01L2224/80779	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/80779		
H01L2224/8078	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8078		1
H01L2224/80781	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/80781		
H01L2224/80783	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/80783		
H01L2224/80784	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/80784		1
H01L2224/80786	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/80786		
H01L2224/80787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/80787		
H01L2224/80788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/80788		
H01L2224/8079	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8079		
H01L2224/80791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/80791		
H01L2224/80793	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/807&#160;-&#160;H01L2224/80791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/80793		
H01L2224/80794	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/807&#160;-&#160;H01L2224/80791	CPCONLY	H01L2224/80794		
H01L2224/80795	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/807&#160;-&#160;H01L2224/80791	CPCONLY	H01L2224/80795		
H01L2224/80798	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/80798		2
H01L2224/80799	14	Shape or distribution of the fillers	CPCONLY	H01L2224/80799		
H01L2224/808	10	Bonding techniques	CPCONLY	H01L2224/808		50
H01L2224/80801	11	Soldering or alloying	CPCONLY	H01L2224/80801		104
H01L2224/80805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/80805		62
H01L2224/8081	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8081		14
H01L2224/80815	12	Reflow soldering	CPCONLY	H01L2224/80815		77
H01L2224/8082	12	Diffusion bonding	CPCONLY	H01L2224/8082		29
H01L2224/80825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/80825		6
H01L2224/8083	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8083		132
H01L2224/8084	11	Sintering	CPCONLY	H01L2224/8084		33
H01L2224/8085	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8085		27
H01L2224/80855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/80855		14
H01L2224/80856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/80856		3
H01L2224/80859	13	Localised curing of parts of the bonding area	CPCONLY	H01L2224/80859		1
H01L2224/80862	13	Heat curing	CPCONLY	H01L2224/80862		34
H01L2224/80865	13	Microwave curing	CPCONLY	H01L2224/80865		
H01L2224/80868	13	Infrared [IR] curing	CPCONLY	H01L2224/80868		1
H01L2224/80871	13	Visible light curing	CPCONLY	H01L2224/80871		1
H01L2224/80874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/80874		38
H01L2224/80877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/80877		2
H01L2224/8088	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8088		3
H01L2224/80885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/80855&#160;-&#160;H01L2224/8088, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/80885		1
H01L2224/8089	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8089		8
H01L2224/80893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/80893		23
H01L2224/80894	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/80894		261
H01L2224/80895	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/80895		2420
H01L2224/80896	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/80896		2380
H01L2224/80897	11	Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like	CPCONLY	H01L2224/80897		7
H01L2224/80898	12	Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other	CPCONLY	H01L2224/80898		7
H01L2224/80899	13	using resilient parts in the bonding area	CPCONLY	H01L2224/80899		
H01L2224/809	10	with the bonding area not providing any mechanical bonding	CPCONLY	H01L2224/809		4
H01L2224/80901	11	Pressing a bonding area against another bonding area by means of a further bonding area or connector	CPCONLY	H01L2224/80901		9
H01L2224/80902	12	by means of a further bonding area	CPCONLY	H01L2224/80902		8
H01L2224/80903	12	by means of a bump or layer connector	CPCONLY	H01L2224/80903		15
H01L2224/80904	12	by means of an encapsulation layer or foil	CPCONLY	H01L2224/80904		22
H01L2224/80905	10	Combinations of bonding methods provided for in at least two different groups from H01L2224/808&#160;-&#160;H01L2224/80904	CPCONLY	H01L2224/80905		57
H01L2224/80906	11	Specific sequence of method steps	CPCONLY	H01L2224/80906		110
H01L2224/80907	11	Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step	CPCONLY	H01L2224/80907		67
H01L2224/80908	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/80908		69
H01L2224/80909	10	Post-treatment of the bonding area	CPCONLY	H01L2224/80909		4
H01L2224/8091	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8091		4
H01L2224/80911	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/80911		2
H01L2224/80912	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/80912		3
H01L2224/80913	12	Plasma cleaning	CPCONLY	H01L2224/80913		2
H01L2224/80914	12	Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge	CPCONLY	H01L2224/80914		
H01L2224/80919	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8091&#160;-&#160;H01L2224/80914	CPCONLY	H01L2224/80919		
H01L2224/8092	11	Applying permanent coating, e.g. protective coating	CPCONLY	H01L2224/8092		8
H01L2224/8093	11	Reshaping	CPCONLY	H01L2224/8093		5
H01L2224/80931	12	by chemical means, e.g. etching	CPCONLY	H01L2224/80931		2
H01L2224/80935	12	by heating means, e.g. reflowing	CPCONLY	H01L2224/80935		27
H01L2224/80937	13	using a polychromatic heating lamp	CPCONLY	H01L2224/80937		
H01L2224/80939	13	using a laser	CPCONLY	H01L2224/80939		
H01L2224/80941	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/80941		
H01L2224/80943	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/80943		
H01L2224/80945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/80945		
H01L2224/80947	12	by mechanical means, e.g. pull-and-cut, pressing, stamping	CPCONLY	H01L2224/80947		1
H01L2224/80948	11	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/80948		294
H01L2224/80951	11	Forming additional members, e.g. for reinforcing	CPCONLY	H01L2224/80951		6
H01L2224/80986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/80986		230
H01L2224/81	9	using a bump connector	CPCONLY	H01L2224/81		5274
H01L2224/81001	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/81001		385
H01L2224/81002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/81002		99
H01L2224/81005	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/81005		1595
H01L2224/81007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process	CPCONLY	H01L2224/81007		255
H01L2224/81009	10	Pre-treatment of the bump connector or the bonding area	CPCONLY	H01L2224/81009		45
H01L2224/8101	11	Cleaning the bump connector, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8101		34
H01L2224/81011	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/81011		351
H01L2224/81012	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/81012		39
H01L2224/81013	12	Plasma cleaning	CPCONLY	H01L2224/81013		64
H01L2224/81014	12	Thermal cleaning, e.g. decomposition, sublimation	CPCONLY	H01L2224/81014		12
H01L2224/81019	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8101&#160;-&#160;H01L2224/81014	CPCONLY	H01L2224/81019		3
H01L2224/8102	11	Applying permanent coating to the bump connector in the bonding apparatus, e.g. in-situ coating	CPCONLY	H01L2224/8102		31
H01L2224/81022	11	Cleaning the bonding area, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/81022		62
H01L2224/81024	11	Applying flux to the bonding area	CPCONLY	H01L2224/81024		281
H01L2224/81026	11	Applying a precursor material to the bonding area	CPCONLY	H01L2224/81026		33
H01L2224/8103	11	Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector	CPCONLY	H01L2224/8103		7
H01L2224/81031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/81031		7
H01L2224/81035	12	by heating means	CPCONLY	H01L2224/81035		11
H01L2224/81037	13	using a polychromatic heating lamp	CPCONLY	H01L2224/81037		
H01L2224/81039	13	using a laser	CPCONLY	H01L2224/81039		3
H01L2224/81041	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/81041		
H01L2224/81047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/81047		28
H01L2224/81048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/81048		98
H01L2224/81051	11	Forming additional members	CPCONLY	H01L2224/81051		13
H01L2224/81052	10	Detaching bump connectors, e.g. after testing	CPCONLY	H01L2224/81052		35
H01L2224/81053	10	Bonding environment	CPCONLY	H01L2224/81053		5
H01L2224/81054	11	Composition of the atmosphere	CPCONLY	H01L2224/81054		49
H01L2224/81055	12	being oxidating	CPCONLY	H01L2224/81055		11
H01L2224/81065	12	being reducing	CPCONLY	H01L2224/81065		84
H01L2224/81075	12	being inert	CPCONLY	H01L2224/81075		87
H01L2224/81085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/81085		18
H01L2224/8109	11	Vacuum	CPCONLY	H01L2224/8109		67
H01L2224/81091	11	Under pressure	CPCONLY	H01L2224/81091		34
H01L2224/81092	12	Atmospheric pressure	CPCONLY	H01L2224/81092		14
H01L2224/81093	12	Transient conditions, e.g. gas-flow	CPCONLY	H01L2224/81093		16
H01L2224/81095	11	Temperature settings	CPCONLY	H01L2224/81095		25
H01L2224/81096	12	Transient conditions	CPCONLY	H01L2224/81096		3
H01L2224/81097	13	Heating	CPCONLY	H01L2224/81097		142
H01L2224/81098	13	Cooling	CPCONLY	H01L2224/81098		11
H01L2224/81099	12	Ambient temperature	CPCONLY	H01L2224/81099		29
H01L2224/811	10	the bump connector being supplied to the parts to be connected in the bonding apparatus	CPCONLY	H01L2224/811		86
H01L2224/81101	11	as prepeg comprising a bump connector, e.g. provided in an insulating plate member	CPCONLY	H01L2224/81101		89
H01L2224/8111	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8111		5
H01L2224/8112	10	Aligning	CPCONLY	H01L2224/8112		98
H01L2224/81121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/81121		296
H01L2224/81122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/81122		24
H01L2224/81123	13	Shape or position of the body	CPCONLY	H01L2224/81123		14
H01L2224/81125	13	Bonding areas on the body	CPCONLY	H01L2224/81125		28
H01L2224/81127	13	Bonding areas outside the body	CPCONLY	H01L2224/81127		16
H01L2224/81129	13	Shape or position of the other item	CPCONLY	H01L2224/81129		13
H01L2224/8113	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8113		157
H01L2224/81132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/81132		157
H01L2224/81136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/81136		414
H01L2224/81138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/81138		44
H01L2224/81139	13	Guiding structures on the body	CPCONLY	H01L2224/81139		208
H01L2224/8114	13	Guiding structures outside the body	CPCONLY	H01L2224/8114		415
H01L2224/81141	13	Guiding structures both on and outside the body	CPCONLY	H01L2224/81141		323
H01L2224/81143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/81143		210
H01L2224/81148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/81148		5
H01L2224/81149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/81149		5
H01L2224/8115	13	Rotational movements	CPCONLY	H01L2224/8115		7
H01L2224/8116	13	Translational movements	CPCONLY	H01L2224/8116		7
H01L2224/81169	12	being the upper part of the bonding apparatus, i.e. bonding head	CPCONLY	H01L2224/81169		7
H01L2224/8117	13	Rotational movements	CPCONLY	H01L2224/8117		9
H01L2224/8118	13	Translational movements	CPCONLY	H01L2224/8118		17
H01L2224/8119	10	Arrangement of the bump connectors prior to mounting	CPCONLY	H01L2224/8119		32
H01L2224/81191	11	wherein the bump connectors are disposed only on the semiconductor or solid-state body	CPCONLY	H01L2224/81191		3146
H01L2224/81192	11	wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body	CPCONLY	H01L2224/81192		1401
H01L2224/81193	11	wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body	CPCONLY	H01L2224/81193		2270
H01L2224/81194	11	Lateral distribution of the bump connectors	CPCONLY	H01L2224/81194		172
H01L2224/812	10	Applying energy for connecting	CPCONLY	H01L2224/812		175
H01L2224/81201	11	Compression bonding	CPCONLY	H01L2224/81201		321
H01L2224/81203	12	Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding	CPCONLY	H01L2224/81203		1543
H01L2224/81204	13	with a graded temperature profile	CPCONLY	H01L2224/81204		95
H01L2224/81205	12	Ultrasonic bonding	CPCONLY	H01L2224/81205		397
H01L2224/81206	13	Direction of oscillation	CPCONLY	H01L2224/81206		30
H01L2224/81207	13	Thermosonic bonding	CPCONLY	H01L2224/81207		116
H01L2224/81208	12	applying unidirectional static pressure	CPCONLY	H01L2224/81208		76
H01L2224/81209	12	applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid	CPCONLY	H01L2224/81209		24
H01L2224/8121	11	using a reflow oven	CPCONLY	H01L2224/8121		636
H01L2224/81211	12	with a graded temperature profile	CPCONLY	H01L2224/81211		56
H01L2224/8122	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8122		40
H01L2224/81222	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/81222		32
H01L2224/81224	12	using a laser	CPCONLY	H01L2224/81224		302
H01L2224/8123	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8123		81
H01L2224/81232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/81232		14
H01L2224/81234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/81234		54
H01L2224/81236	11	using electro-static corona discharge	CPCONLY	H01L2224/81236		1
H01L2224/81237	11	using an electron beam	CPCONLY	H01L2224/81237		1
H01L2224/81238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/81238		15
H01L2224/8134	10	Bonding interfaces of the bump connector	CPCONLY	H01L2224/8134		13
H01L2224/81345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/81345		138
H01L2224/81355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/81355		55
H01L2224/81359	11	Material	CPCONLY	H01L2224/81359		21
H01L2224/8136	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8136		9
H01L2224/81365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/81365		47
H01L2224/81375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/81375		16
H01L2224/81379	11	Material	CPCONLY	H01L2224/81379		13
H01L2224/8138	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8138		16
H01L2224/81385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/81385		550
H01L2224/81395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/81395		107
H01L2224/81399	11	Material	CPCONLY	H01L2224/81399		159
H01L2224/814	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/814		252
H01L2224/81401	13	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/81401		15
H01L2224/81405	14	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/81405		9
H01L2224/81409	14	Indium [In] as principal constituent	CPCONLY	H01L2224/81409		49
H01L2224/81411	14	Tin [Sn] as principal constituent	CPCONLY	H01L2224/81411		221
H01L2224/81413	14	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/81413		32
H01L2224/81414	14	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/81414		
H01L2224/81416	14	Lead [Pb] as principal constituent	CPCONLY	H01L2224/81416		48
H01L2224/81417	13	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/81417		6
H01L2224/81418	14	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/81418		20
H01L2224/8142	14	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8142		9
H01L2224/81423	14	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/81423		11
H01L2224/81424	14	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/81424		257
H01L2224/81438	13	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/81438		21
H01L2224/81439	14	Silver [Ag] as principal constituent	CPCONLY	H01L2224/81439		264
H01L2224/81444	14	Gold [Au] as principal constituent	CPCONLY	H01L2224/81444		515
H01L2224/81447	14	Copper [Cu] as principal constituent	CPCONLY	H01L2224/81447		685
H01L2224/81449	14	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/81449		6
H01L2224/81455	14	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/81455		343
H01L2224/81457	14	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/81457		23
H01L2224/8146	14	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8146		39
H01L2224/81463	13	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/81463		9
H01L2224/81464	14	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/81464		120
H01L2224/81466	14	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/81466		125
H01L2224/81469	14	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/81469		51
H01L2224/8147	14	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8147		3
H01L2224/81471	14	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/81471		36
H01L2224/81472	14	Vanadium [V] as principal constituent	CPCONLY	H01L2224/81472		3
H01L2224/81473	14	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/81473		10
H01L2224/81476	14	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/81476		10
H01L2224/81478	14	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/81478		14
H01L2224/81479	14	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/81479		5
H01L2224/8148	14	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8148		24
H01L2224/81481	14	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/81481		22
H01L2224/81483	14	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/81483		4
H01L2224/81484	14	Tungsten [W] as principal constituent	CPCONLY	H01L2224/81484		94
H01L2224/81486	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/81486		29
H01L2224/81487	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/81487		6
H01L2224/81488	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/81488		6
H01L2224/8149	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8149		41
H01L2224/81491	13	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/81491		1
H01L2224/81493	12	with a principal constituent of the material being a solid not provided for in groups H01L2224/814&#160;-&#160;H01L2224/81491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/81493		15
H01L2224/81494	12	with a principal constituent of the material being a liquid not provided for in groups H01L2224/814&#160;-&#160;H01L2224/81491	CPCONLY	H01L2224/81494		2
H01L2224/81495	12	with a principal constituent of the material being a gas not provided for in groups H01L2224/814&#160;-&#160;H01L2224/81491	CPCONLY	H01L2224/81495		
H01L2224/81498	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/81498		
H01L2224/81499	13	Material of the matrix	CPCONLY	H01L2224/81499		2
H01L2224/815	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/815		
H01L2224/81501	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/81501		
H01L2224/81505	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/81505		3
H01L2224/81509	16	Indium [In] as principal constituent	CPCONLY	H01L2224/81509		4
H01L2224/81511	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/81511		3
H01L2224/81513	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/81513		3
H01L2224/81514	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/81514		
H01L2224/81516	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/81516		
H01L2224/81517	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/81517		
H01L2224/81518	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/81518		
H01L2224/8152	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8152		
H01L2224/81523	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/81523		
H01L2224/81524	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/81524		
H01L2224/81538	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/81538		
H01L2224/81539	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/81539		2
H01L2224/81544	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/81544		2
H01L2224/81547	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/81547		2
H01L2224/81549	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/81549		
H01L2224/81555	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/81555		1
H01L2224/81557	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/81557		
H01L2224/8156	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8156		
H01L2224/81563	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/81563		
H01L2224/81564	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/81564		
H01L2224/81566	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/81566		
H01L2224/81569	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/81569		
H01L2224/8157	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8157		
H01L2224/81571	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/81571		
H01L2224/81572	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/81572		
H01L2224/81573	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/81573		
H01L2224/81576	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/81576		
H01L2224/81578	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/81578		
H01L2224/81579	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/81579		
H01L2224/8158	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8158		
H01L2224/81581	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/81581		
H01L2224/81583	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/81583		
H01L2224/81584	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/81584		
H01L2224/81586	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/81586		
H01L2224/81587	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/81587		1
H01L2224/81588	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/81588		
H01L2224/8159	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8159		40
H01L2224/81591	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/81591		3
H01L2224/81593	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/815&#160;-&#160;H01L2224/81591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/81593		1
H01L2224/81594	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/815&#160;-&#160;H01L2224/81591	CPCONLY	H01L2224/81594		13
H01L2224/81595	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/815&#160;-&#160;H01L2224/81591	CPCONLY	H01L2224/81595		
H01L2224/81598	13	Fillers	CPCONLY	H01L2224/81598		1
H01L2224/81599	14	Base material	CPCONLY	H01L2224/81599		1
H01L2224/816	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/816		37
H01L2224/81601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/81601		1
H01L2224/81605	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/81605		2
H01L2224/81609	17	Indium [In] as principal constituent	CPCONLY	H01L2224/81609		5
H01L2224/81611	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/81611		7
H01L2224/81613	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/81613		6
H01L2224/81614	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/81614		
H01L2224/81616	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/81616		2
H01L2224/81617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/81617		1
H01L2224/81618	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/81618		5
H01L2224/8162	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8162		1
H01L2224/81623	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/81623		
H01L2224/81624	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/81624		3
H01L2224/81638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/81638		1
H01L2224/81639	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/81639		20
H01L2224/81644	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/81644		10
H01L2224/81647	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/81647		12
H01L2224/81649	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/81649		1
H01L2224/81655	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/81655		8
H01L2224/81657	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/81657		3
H01L2224/8166	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8166		4
H01L2224/81663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/81663		1
H01L2224/81664	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/81664		3
H01L2224/81666	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/81666		2
H01L2224/81669	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/81669		6
H01L2224/8167	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8167		
H01L2224/81671	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/81671		1
H01L2224/81672	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/81672		
H01L2224/81673	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/81673		
H01L2224/81676	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/81676		
H01L2224/81678	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/81678		
H01L2224/81679	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/81679		
H01L2224/8168	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8168		
H01L2224/81681	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/81681		
H01L2224/81683	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/81683		
H01L2224/81684	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/81684		2
H01L2224/81686	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/81686		3
H01L2224/81687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/81687		2
H01L2224/81688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/81688		
H01L2224/8169	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8169		8
H01L2224/81691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/81691		2
H01L2224/81693	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/816&#160;-&#160;H01L2224/81691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/81693		1
H01L2224/81694	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/816&#160;-&#160;H01L2224/81691	CPCONLY	H01L2224/81694		
H01L2224/81695	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/816&#160;-&#160;H01L2224/81691	CPCONLY	H01L2224/81695		2
H01L2224/81698	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/81698		
H01L2224/81699	14	Coating material	CPCONLY	H01L2224/81699		1
H01L2224/817	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/817		
H01L2224/81701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/81701		
H01L2224/81705	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/81705		
H01L2224/81709	17	Indium [In] as principal constituent	CPCONLY	H01L2224/81709		3
H01L2224/81711	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/81711		5
H01L2224/81713	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/81713		1
H01L2224/81714	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/81714		
H01L2224/81716	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/81716		
H01L2224/81717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/81717		
H01L2224/81718	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/81718		1
H01L2224/8172	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8172		
H01L2224/81723	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/81723		
H01L2224/81724	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/81724		
H01L2224/81738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/81738		
H01L2224/81739	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/81739		3
H01L2224/81744	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/81744		6
H01L2224/81747	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/81747		2
H01L2224/81749	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/81749		
H01L2224/81755	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/81755		2
H01L2224/81757	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/81757		
H01L2224/8176	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8176		
H01L2224/81763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/81763		
H01L2224/81764	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/81764		
H01L2224/81766	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/81766		
H01L2224/81769	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/81769		
H01L2224/8177	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8177		1
H01L2224/81771	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/81771		
H01L2224/81772	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/81772		
H01L2224/81773	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/81773		
H01L2224/81776	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/81776		
H01L2224/81778	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/81778		
H01L2224/81779	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/81779		
H01L2224/8178	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8178		
H01L2224/81781	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/81781		
H01L2224/81783	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/81783		
H01L2224/81784	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/81784		
H01L2224/81786	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/81786		
H01L2224/81787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/81787		
H01L2224/81788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/81788		
H01L2224/8179	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8179		
H01L2224/81791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/81791		
H01L2224/81793	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/817&#160;-&#160;H01L2224/81791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/81793		
H01L2224/81794	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/817&#160;-&#160;H01L2224/81791	CPCONLY	H01L2224/81794		
H01L2224/81795	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/817&#160;-&#160;H01L2224/81791	CPCONLY	H01L2224/81795		
H01L2224/81798	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/81798		
H01L2224/81799	14	Shape or distribution of the fillers	CPCONLY	H01L2224/81799		3
H01L2224/818	10	Bonding techniques	CPCONLY	H01L2224/818		93
H01L2224/81801	11	Soldering or alloying	CPCONLY	H01L2224/81801		4469
H01L2224/81805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/81805		358
H01L2224/8181	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8181		171
H01L2224/81815	12	Reflow soldering	CPCONLY	H01L2224/81815		3305
H01L2224/8182	12	Diffusion bonding	CPCONLY	H01L2224/8182		103
H01L2224/81825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/81825		87
H01L2224/8183	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8183		107
H01L2224/8184	11	Sintering	CPCONLY	H01L2224/8184		154
H01L2224/8185	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8185		135
H01L2224/81855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/81855		42
H01L2224/81856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/81856		10
H01L2224/81859	13	Localised curing of parts of the bump connector	CPCONLY	H01L2224/81859		2
H01L2224/81862	13	Heat curing	CPCONLY	H01L2224/81862		70
H01L2224/81865	13	Microwave curing	CPCONLY	H01L2224/81865		1
H01L2224/81868	13	Infrared [IR] curing	CPCONLY	H01L2224/81868		5
H01L2224/81871	13	Visible light curing	CPCONLY	H01L2224/81871		6
H01L2224/81874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/81874		16
H01L2224/81877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/81877		1
H01L2224/8188	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8188		6
H01L2224/81885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/81855&#160;-&#160;H01L2224/8188, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/81885		7
H01L2224/8189	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8189		2
H01L2224/81893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/81893		6
H01L2224/81894	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/81894		101
H01L2224/81895	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/81895		197
H01L2224/81896	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/81896		16
H01L2224/81897	11	Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like	CPCONLY	H01L2224/81897		43
H01L2224/81898	12	Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other	CPCONLY	H01L2224/81898		92
H01L2224/81899	13	using resilient parts in the bump connector or in the bonding area	CPCONLY	H01L2224/81899		49
H01L2224/819	10	with the bump connector not providing any mechanical bonding	CPCONLY	H01L2224/819		26
H01L2224/81901	11	Pressing the bump connector against the bonding areas by means of another connector	CPCONLY	H01L2224/81901		47
H01L2224/81902	12	by means of another bump connector	CPCONLY	H01L2224/81902		24
H01L2224/81903	12	by means of a layer connector	CPCONLY	H01L2224/81903		413
H01L2224/81904	12	by means of an encapsulation layer or foil	CPCONLY	H01L2224/81904		18
H01L2224/81905	10	Combinations of bonding methods provided for in at least two different groups from H01L2224/818&#160;-&#160;H01L2224/81904	CPCONLY	H01L2224/81905		35
H01L2224/81906	11	Specific sequence of method steps	CPCONLY	H01L2224/81906		49
H01L2224/81907	11	Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step	CPCONLY	H01L2224/81907		172
H01L2224/81908	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/81908		119
H01L2224/81909	10	Post-treatment of the bump connector or bonding area	CPCONLY	H01L2224/81909		6
H01L2224/8191	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8191		103
H01L2224/81911	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/81911		57
H01L2224/81912	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/81912		10
H01L2224/81913	12	Plasma cleaning	CPCONLY	H01L2224/81913		20
H01L2224/81914	12	Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge	CPCONLY	H01L2224/81914		5
H01L2224/81919	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8191&#160;-&#160;H01L2224/81914	CPCONLY	H01L2224/81919		1
H01L2224/8192	11	Applying permanent coating, e.g. protective coating	CPCONLY	H01L2224/8192		112
H01L2224/8193	11	Reshaping	CPCONLY	H01L2224/8193		13
H01L2224/81931	12	by chemical means, e.g. etching	CPCONLY	H01L2224/81931		7
H01L2224/81935	12	by heating means, e.g. reflowing	CPCONLY	H01L2224/81935		42
H01L2224/81937	13	using a polychromatic heating lamp	CPCONLY	H01L2224/81937		3
H01L2224/81939	13	using a laser	CPCONLY	H01L2224/81939		7
H01L2224/81941	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/81941		
H01L2224/81943	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/81943		
H01L2224/81945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/81945		
H01L2224/81947	12	by mechanical means, e.g. "pull-and-cut", pressing, stamping	CPCONLY	H01L2224/81947		16
H01L2224/81948	11	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/81948		86
H01L2224/81951	11	Forming additional members, e.g. for reinforcing	CPCONLY	H01L2224/81951		38
H01L2224/81986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/81986		274
H01L2224/82	9	by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]	CPCONLY	H01L2224/82		1316
H01L2224/82001	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/82001		171
H01L2224/82002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/82002		27
H01L2224/82005	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/82005		239
H01L2224/82007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process	CPCONLY	H01L2224/82007		204
H01L2224/82009	10	Pre-treatment of the connector or the bonding area	CPCONLY	H01L2224/82009		14
H01L2224/8201	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8201		14
H01L2224/8203	11	Reshaping, e.g. forming vias	CPCONLY	H01L2224/8203		229
H01L2224/82031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/82031		102
H01L2224/82035	12	by heating means	CPCONLY	H01L2224/82035		1
H01L2224/82039	13	using a laser	CPCONLY	H01L2224/82039		561
H01L2224/82045	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/82045		2
H01L2224/82047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/82047		142
H01L2224/82048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/82048		5
H01L2224/82051	11	Forming additional members	CPCONLY	H01L2224/82051		25
H01L2224/82053	10	Bonding environment	CPCONLY	H01L2224/82053		1
H01L2224/82054	11	Composition of the atmosphere	CPCONLY	H01L2224/82054		1
H01L2224/82085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/82085		4
H01L2224/8209	11	Vacuum	CPCONLY	H01L2224/8209		1
H01L2224/82091	11	Under pressure	CPCONLY	H01L2224/82091		
H01L2224/82095	11	Temperature settings	CPCONLY	H01L2224/82095		
H01L2224/82096	12	Transient conditions	CPCONLY	H01L2224/82096		
H01L2224/82097	13	Heating	CPCONLY	H01L2224/82097		2
H01L2224/82098	13	Cooling	CPCONLY	H01L2224/82098		
H01L2224/82099	12	Ambient temperature	CPCONLY	H01L2224/82099		
H01L2224/821	10	Forming a build-up interconnect	CPCONLY	H01L2224/821		205
H01L2224/82101	11	by additive methods, e.g. direct writing	CPCONLY	H01L2224/82101		301
H01L2224/82102	12	using jetting, e.g. ink jet	CPCONLY	H01L2224/82102		331
H01L2224/82103	12	using laser direct writing	CPCONLY	H01L2224/82103		87
H01L2224/82104	12	using screen printing	CPCONLY	H01L2224/82104		47
H01L2224/82105	12	by using a preform	CPCONLY	H01L2224/82105		44
H01L2224/82106	11	by subtractive methods	CPCONLY	H01L2224/82106		198
H01L2224/82108	11	by self-assembly processes	CPCONLY	H01L2224/82108		6
H01L2224/8211	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8211		5
H01L2224/8212	10	Aligning	CPCONLY	H01L2224/8212		11
H01L2224/82121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/82121		7
H01L2224/82122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/82122		4
H01L2224/8213	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8213		20
H01L2224/82132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/82132		16
H01L2224/82136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/82136		4
H01L2224/82138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/82138		26
H01L2224/82143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/82143		21
H01L2224/82148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/82148		
H01L2224/82149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/82149		
H01L2224/8215	13	Rotational movements	CPCONLY	H01L2224/8215		
H01L2224/8216	13	Translational movements	CPCONLY	H01L2224/8216		
H01L2224/82169	12	being the upper part of the bonding apparatus, e.g. nozzle	CPCONLY	H01L2224/82169		
H01L2224/8217	13	Rotational movement	CPCONLY	H01L2224/8217		
H01L2224/8218	13	Translational movements	CPCONLY	H01L2224/8218		2
H01L2224/82181	14	connecting first on the semiconductor or solid-state body, i.e. on-chip,	CPCONLY	H01L2224/82181		115
H01L2224/82186	14	connecting first outside the semiconductor or solid-state body, i.e. off-chip	CPCONLY	H01L2224/82186		
H01L2224/82191	14	connecting first both on and outside the semiconductor or solid-state body	CPCONLY	H01L2224/82191		
H01L2224/822	10	Applying energy for connecting	CPCONLY	H01L2224/822		12
H01L2224/82201	11	Compression bonding	CPCONLY	H01L2224/82201		13
H01L2224/82203	12	Thermocompression bonding	CPCONLY	H01L2224/82203		33
H01L2224/82205	12	Ultrasonic bonding	CPCONLY	H01L2224/82205		2
H01L2224/82207	13	Thermosonic bonding	CPCONLY	H01L2224/82207		1
H01L2224/8221	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8221		5
H01L2224/82212	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/82212		
H01L2224/82214	12	using a laser	CPCONLY	H01L2224/82214		14
H01L2224/8223	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8223		2
H01L2224/82232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/82232		
H01L2224/82234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/82234		3
H01L2224/82236	11	using electro-static corona discharge	CPCONLY	H01L2224/82236		
H01L2224/82237	11	using electron beam	CPCONLY	H01L2224/82237		
H01L2224/82238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/82238		1
H01L2224/8234	10	Bonding interfaces of the connector	CPCONLY	H01L2224/8234		5
H01L2224/82345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/82345		3
H01L2224/82355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/82355		2
H01L2224/82359	11	Material	CPCONLY	H01L2224/82359		2
H01L2224/8236	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8236		3
H01L2224/82365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/82365		15
H01L2224/82375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/82375		2
H01L2224/82379	11	Material	CPCONLY	H01L2224/82379		1
H01L2224/8238	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8238		
H01L2224/82385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/82385		28
H01L2224/82395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/82395		2
H01L2224/82399	11	Material	CPCONLY	H01L2224/82399		15
H01L2224/828	10	Bonding techniques	CPCONLY	H01L2224/828		7
H01L2224/82801	11	Soldering or alloying	CPCONLY	H01L2224/82801		13
H01L2224/82805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/82805		1
H01L2224/8281	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8281		2
H01L2224/82815	12	Reflow soldering	CPCONLY	H01L2224/82815		21
H01L2224/8282	12	Diffusion bonding	CPCONLY	H01L2224/8282		2
H01L2224/82825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/82825		1
H01L2224/8283	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8283		
H01L2224/8284	11	Sintering	CPCONLY	H01L2224/8284		28
H01L2224/8285	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8285		12
H01L2224/82855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/82855		7
H01L2224/82856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/82856		
H01L2224/82859	13	Localised curing of parts of the connector	CPCONLY	H01L2224/82859		1
H01L2224/82862	13	Heat curing	CPCONLY	H01L2224/82862		6
H01L2224/82865	13	Microwave curing	CPCONLY	H01L2224/82865		
H01L2224/82868	13	Infrared [IR] curing	CPCONLY	H01L2224/82868		3
H01L2224/82871	13	Visible light curing	CPCONLY	H01L2224/82871		4
H01L2224/82874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/82874		12
H01L2224/82877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/82877		1
H01L2224/8288	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8288		2
H01L2224/82885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/82855&#160;-&#160;H01L2224/8288, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/82885		
H01L2224/8289	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8289		3
H01L2224/82893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/82893		2
H01L2224/82895	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/82895		11
H01L2224/82896	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/82896		20
H01L2224/82897	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/82897		7
H01L2224/82899	11	Combinations of bonding methods provided for in at least two different groups from H01L2224/828&#160;-&#160;H01L2224/82897	CPCONLY	H01L2224/82899		
H01L2224/829	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/829		11
H01L2224/82909	10	Post-treatment of the connector or the bonding area	CPCONLY	H01L2224/82909		3
H01L2224/8291	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8291		2
H01L2224/8293	11	Reshaping	CPCONLY	H01L2224/8293		3
H01L2224/82931	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/82931		6
H01L2224/82935	12	by heating means	CPCONLY	H01L2224/82935		4
H01L2224/82939	13	using a laser	CPCONLY	H01L2224/82939		4
H01L2224/82945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/82945		
H01L2224/82947	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/82947		13
H01L2224/82948	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/82948		5
H01L2224/82951	11	Forming additional members	CPCONLY	H01L2224/82951		52
H01L2224/82986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/82986		34
H01L2224/83	9	using a layer connector	CPCONLY	H01L2224/83		5074
H01L2224/83001	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/83001		345
H01L2224/83002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/83002		141
H01L2224/83005	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/83005		1147
H01L2224/83007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process	CPCONLY	H01L2224/83007		232
H01L2224/83009	10	Pre-treatment of the layer connector or the bonding area	CPCONLY	H01L2224/83009		68
H01L2224/8301	11	Cleaning the layer connector, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8301		32
H01L2224/83011	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/83011		67
H01L2224/83012	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/83012		15
H01L2224/83013	12	Plasma cleaning	CPCONLY	H01L2224/83013		63
H01L2224/83014	12	Thermal cleaning, e.g. decomposition, sublimation	CPCONLY	H01L2224/83014		7
H01L2224/83019	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8301&#160;-&#160;H01L2224/83014	CPCONLY	H01L2224/83019		2
H01L2224/8302	11	Applying permanent coating to the layer connector in the bonding apparatus, e.g. in-situ coating	CPCONLY	H01L2224/8302		33
H01L2224/83022	11	Cleaning the bonding area, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/83022		52
H01L2224/83024	11	Applying flux to the bonding area	CPCONLY	H01L2224/83024		83
H01L2224/83026	11	Applying a precursor material to the bonding area	CPCONLY	H01L2224/83026		24
H01L2224/8303	11	Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector	CPCONLY	H01L2224/8303		14
H01L2224/83031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/83031		22
H01L2224/83035	12	by heating means	CPCONLY	H01L2224/83035		5
H01L2224/83037	13	using a polychromatic heating lamp	CPCONLY	H01L2224/83037		2
H01L2224/83039	13	using a laser	CPCONLY	H01L2224/83039		8
H01L2224/83041	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/83041		
H01L2224/83047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/83047		35
H01L2224/83048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/83048		217
H01L2224/83051	11	Forming additional members, e.g. dam structures	CPCONLY	H01L2224/83051		689
H01L2224/83052	10	Detaching layer connectors, e.g. after testing	CPCONLY	H01L2224/83052		12
H01L2224/83053	10	Bonding environment	CPCONLY	H01L2224/83053		16
H01L2224/83054	11	Composition of the atmosphere	CPCONLY	H01L2224/83054		21
H01L2224/83055	12	being oxidating	CPCONLY	H01L2224/83055		66
H01L2224/83065	12	being reducing	CPCONLY	H01L2224/83065		139
H01L2224/83075	12	being inert	CPCONLY	H01L2224/83075		180
H01L2224/83085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/83085		16
H01L2224/8309	11	Vacuum	CPCONLY	H01L2224/8309		124
H01L2224/83091	11	Under pressure	CPCONLY	H01L2224/83091		63
H01L2224/83092	12	Atmospheric pressure	CPCONLY	H01L2224/83092		22
H01L2224/83093	12	Transient conditions, e.g. gas-flow	CPCONLY	H01L2224/83093		25
H01L2224/83095	11	Temperature settings	CPCONLY	H01L2224/83095		39
H01L2224/83096	12	Transient conditions	CPCONLY	H01L2224/83096		6
H01L2224/83097	13	Heating	CPCONLY	H01L2224/83097		162
H01L2224/83098	13	Cooling	CPCONLY	H01L2224/83098		10
H01L2224/83099	12	Ambient temperature	CPCONLY	H01L2224/83099		46
H01L2224/831	10	the layer connector being supplied to the parts to be connected in the bonding apparatus	CPCONLY	H01L2224/831		190
H01L2224/83101	11	as prepeg comprising a layer connector, e.g. provided in an insulating plate member	CPCONLY	H01L2224/83101		2384
H01L2224/83102	11	using surface energy, e.g. capillary forces	CPCONLY	H01L2224/83102		817
H01L2224/83104	11	by applying pressure, e.g. by injection	CPCONLY	H01L2224/83104		438
H01L2224/8311	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8311		11
H01L2224/8312	10	Aligning	CPCONLY	H01L2224/8312		47
H01L2224/83121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/83121		111
H01L2224/83122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/83122		12
H01L2224/83123	13	Shape or position of the body	CPCONLY	H01L2224/83123		30
H01L2224/83125	13	Bonding areas on the body	CPCONLY	H01L2224/83125		13
H01L2224/83127	13	Bonding areas outside the body	CPCONLY	H01L2224/83127		17
H01L2224/83129	13	Shape or position of the other item	CPCONLY	H01L2224/83129		22
H01L2224/8313	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8313		122
H01L2224/83132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/83132		229
H01L2224/83136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/83136		260
H01L2224/83138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/83138		120
H01L2224/83139	13	Guiding structures on the body	CPCONLY	H01L2224/83139		98
H01L2224/8314	13	Guiding structures outside the body	CPCONLY	H01L2224/8314		345
H01L2224/83141	13	Guiding structures both on and outside the body	CPCONLY	H01L2224/83141		85
H01L2224/83143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/83143		144
H01L2224/83148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/83148		3
H01L2224/83149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/83149		2
H01L2224/8315	13	Rotational movements	CPCONLY	H01L2224/8315		3
H01L2224/8316	13	Translational movements	CPCONLY	H01L2224/8316		10
H01L2224/83169	12	being the upper part of the bonding apparatus, i.e. bonding head	CPCONLY	H01L2224/83169		5
H01L2224/8317	13	Rotational movements	CPCONLY	H01L2224/8317		4
H01L2224/8318	13	Translational movements	CPCONLY	H01L2224/8318		12
H01L2224/8319	10	Arrangement of the layer connectors prior to mounting	CPCONLY	H01L2224/8319		2566
H01L2224/83191	11	wherein the layer connectors are disposed only on the semiconductor or solid-state body	CPCONLY	H01L2224/83191		3350
H01L2224/83192	11	wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body	CPCONLY	H01L2224/83192		6038
H01L2224/83193	11	wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body	CPCONLY	H01L2224/83193		661
H01L2224/83194	11	Lateral distribution of the layer connectors	CPCONLY	H01L2224/83194		754
H01L2224/832	10	Applying energy for connecting	CPCONLY	H01L2224/832		108
H01L2224/83201	11	Compression bonding	CPCONLY	H01L2224/83201		354
H01L2224/83203	12	Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding	CPCONLY	H01L2224/83203		1223
H01L2224/83204	13	with a graded temperature profile	CPCONLY	H01L2224/83204		140
H01L2224/83205	12	Ultrasonic bonding	CPCONLY	H01L2224/83205		324
H01L2224/83206	13	Direction of oscillation	CPCONLY	H01L2224/83206		16
H01L2224/83207	13	Thermosonic bonding	CPCONLY	H01L2224/83207		43
H01L2224/83208	12	applying unidirectional static pressure	CPCONLY	H01L2224/83208		54
H01L2224/83209	12	applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid	CPCONLY	H01L2224/83209		49
H01L2224/8321	11	using a reflow oven	CPCONLY	H01L2224/8321		185
H01L2224/83211	12	with a graded temperature profile	CPCONLY	H01L2224/83211		39
H01L2224/8322	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8322		68
H01L2224/83222	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/83222		53
H01L2224/83224	12	using a laser	CPCONLY	H01L2224/83224		156
H01L2224/8323	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8323		32
H01L2224/83232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/83232		11
H01L2224/83234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/83234		42
H01L2224/83236	11	using electro-static corona discharge	CPCONLY	H01L2224/83236		3
H01L2224/83237	11	using an electron beam	CPCONLY	H01L2224/83237		4
H01L2224/83238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/83238		17
H01L2224/8334	10	Bonding interfaces of the layer connector	CPCONLY	H01L2224/8334		12
H01L2224/83345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/83345		35
H01L2224/83355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/83355		7
H01L2224/83359	11	Material	CPCONLY	H01L2224/83359		48
H01L2224/8336	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8336		3
H01L2224/83365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/83365		222
H01L2224/83375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/83375		16
H01L2224/83379	11	Material	CPCONLY	H01L2224/83379		23
H01L2224/8338	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8338		7
H01L2224/83385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/83385		2668
H01L2224/83395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/83395		27
H01L2224/83399	11	Material	CPCONLY	H01L2224/83399		88
H01L2224/834	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/834		55
H01L2224/83401	13	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/83401		3
H01L2224/83405	14	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/83405		9
H01L2224/83409	14	Indium [In] as principal constituent	CPCONLY	H01L2224/83409		33
H01L2224/83411	14	Tin [Sn] as principal constituent	CPCONLY	H01L2224/83411		100
H01L2224/83413	14	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/83413		11
H01L2224/83414	14	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/83414		
H01L2224/83416	14	Lead [Pb] as principal constituent	CPCONLY	H01L2224/83416		16
H01L2224/83417	13	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/83417		11
H01L2224/83418	14	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/83418		19
H01L2224/8342	14	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8342		6
H01L2224/83423	14	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/83423		3
H01L2224/83424	14	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/83424		263
H01L2224/83438	13	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/83438		44
H01L2224/83439	14	Silver [Ag] as principal constituent	CPCONLY	H01L2224/83439		428
H01L2224/83444	14	Gold [Au] as principal constituent	CPCONLY	H01L2224/83444		383
H01L2224/83447	14	Copper [Cu] as principal constituent	CPCONLY	H01L2224/83447		746
H01L2224/83449	14	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/83449		8
H01L2224/83455	14	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/83455		370
H01L2224/83457	14	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/83457		16
H01L2224/8346	14	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8346		79
H01L2224/83463	13	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/83463		15
H01L2224/83464	14	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/83464		120
H01L2224/83466	14	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/83466		51
H01L2224/83469	14	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/83469		73
H01L2224/8347	14	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8347		6
H01L2224/83471	14	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/83471		26
H01L2224/83472	14	Vanadium [V] as principal constituent	CPCONLY	H01L2224/83472		10
H01L2224/83473	14	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/83473		9
H01L2224/83476	14	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/83476		9
H01L2224/83478	14	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/83478		8
H01L2224/83479	14	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/83479		5
H01L2224/8348	14	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8348		30
H01L2224/83481	14	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/83481		9
H01L2224/83483	14	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/83483		
H01L2224/83484	14	Tungsten [W] as principal constituent	CPCONLY	H01L2224/83484		35
H01L2224/83486	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/83486		50
H01L2224/83487	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/83487		40
H01L2224/83488	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/83488		20
H01L2224/8349	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8349		87
H01L2224/83491	13	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/83491		5
H01L2224/83493	12	with a principal constituent of the material being a solid not provided for in groups H01L2224/834&#160;-&#160;H01L2224/83491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/83493		27
H01L2224/83494	12	with a principal constituent of the material being a liquid not provided for in groups H01L2224/834&#160;-&#160;H01L2224/83491	CPCONLY	H01L2224/83494		
H01L2224/83495	12	with a principal constituent of the material being a gas not provided for in groups H01L2224/834&#160;-&#160;H01L2224/83491	CPCONLY	H01L2224/83495		
H01L2224/83498	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/83498		2
H01L2224/83499	13	Material of the matrix	CPCONLY	H01L2224/83499		2
H01L2224/835	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/835		
H01L2224/83501	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/83501		
H01L2224/83505	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/83505		
H01L2224/83509	16	Indium [In] as principal constituent	CPCONLY	H01L2224/83509		
H01L2224/83511	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/83511		1
H01L2224/83513	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/83513		
H01L2224/83514	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/83514		
H01L2224/83516	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/83516		
H01L2224/83517	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/83517		
H01L2224/83518	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/83518		
H01L2224/8352	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8352		
H01L2224/83523	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/83523		
H01L2224/83524	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/83524		4
H01L2224/83538	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/83538		
H01L2224/83539	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/83539		8
H01L2224/83544	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/83544		3
H01L2224/83547	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/83547		4
H01L2224/83549	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/83549		
H01L2224/83555	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/83555		4
H01L2224/83557	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/83557		
H01L2224/8356	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8356		1
H01L2224/83563	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/83563		
H01L2224/83564	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/83564		
H01L2224/83566	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/83566		2
H01L2224/83569	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/83569		
H01L2224/8357	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8357		
H01L2224/83571	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/83571		
H01L2224/83572	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/83572		
H01L2224/83573	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/83573		
H01L2224/83576	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/83576		
H01L2224/83578	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/83578		
H01L2224/83579	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/83579		
H01L2224/8358	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8358		1
H01L2224/83581	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/83581		
H01L2224/83583	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/83583		
H01L2224/83584	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/83584		
H01L2224/83586	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/83586		
H01L2224/83587	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/83587		1
H01L2224/83588	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/83588		
H01L2224/8359	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8359		18
H01L2224/83591	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/83591		6
H01L2224/83593	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/835&#160;-&#160;H01L2224/83591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/83593		
H01L2224/83594	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/835&#160;-&#160;H01L2224/83591	CPCONLY	H01L2224/83594		3
H01L2224/83595	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/835&#160;-&#160;H01L2224/83591	CPCONLY	H01L2224/83595		1
H01L2224/83598	13	Fillers	CPCONLY	H01L2224/83598		
H01L2224/83599	14	Base material	CPCONLY	H01L2224/83599		1
H01L2224/836	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/836		4
H01L2224/83601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/83601		
H01L2224/83605	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/83605		1
H01L2224/83609	17	Indium [In] as principal constituent	CPCONLY	H01L2224/83609		2
H01L2224/83611	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/83611		2
H01L2224/83613	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/83613		2
H01L2224/83614	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/83614		
H01L2224/83616	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/83616		2
H01L2224/83617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/83617		
H01L2224/83618	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/83618		1
H01L2224/8362	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8362		
H01L2224/83623	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/83623		
H01L2224/83624	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/83624		3
H01L2224/83638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/83638		
H01L2224/83639	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/83639		11
H01L2224/83644	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/83644		6
H01L2224/83647	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/83647		9
H01L2224/83649	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/83649		
H01L2224/83655	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/83655		5
H01L2224/83657	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/83657		1
H01L2224/8366	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8366		1
H01L2224/83663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/83663		
H01L2224/83664	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/83664		2
H01L2224/83666	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/83666		2
H01L2224/83669	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/83669		1
H01L2224/8367	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8367		
H01L2224/83671	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/83671		
H01L2224/83672	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/83672		
H01L2224/83673	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/83673		
H01L2224/83676	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/83676		
H01L2224/83678	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/83678		1
H01L2224/83679	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/83679		
H01L2224/8368	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8368		
H01L2224/83681	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/83681		
H01L2224/83683	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/83683		
H01L2224/83684	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/83684		
H01L2224/83686	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/83686		9
H01L2224/83687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/83687		6
H01L2224/83688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/83688		7
H01L2224/8369	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8369		3
H01L2224/83691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/83691		
H01L2224/83693	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/836&#160;-&#160;H01L2224/83691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/83693		7
H01L2224/83694	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/836&#160;-&#160;H01L2224/83691	CPCONLY	H01L2224/83694		
H01L2224/83695	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/836&#160;-&#160;H01L2224/83691	CPCONLY	H01L2224/83695		4
H01L2224/83698	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/83698		
H01L2224/83699	14	Coating material	CPCONLY	H01L2224/83699		
H01L2224/837	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/837		
H01L2224/83701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/83701		1
H01L2224/83705	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/83705		
H01L2224/83709	17	Indium [In] as principal constituent	CPCONLY	H01L2224/83709		
H01L2224/83711	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/83711		
H01L2224/83713	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/83713		
H01L2224/83714	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/83714		
H01L2224/83716	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/83716		
H01L2224/83717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/83717		
H01L2224/83718	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/83718		
H01L2224/8372	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8372		
H01L2224/83723	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/83723		
H01L2224/83724	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/83724		
H01L2224/83738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/83738		
H01L2224/83739	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/83739		
H01L2224/83744	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/83744		1
H01L2224/83747	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/83747		
H01L2224/83749	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/83749		
H01L2224/83755	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/83755		1
H01L2224/83757	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/83757		
H01L2224/8376	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8376		
H01L2224/83763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/83763		
H01L2224/83764	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/83764		
H01L2224/83766	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/83766		
H01L2224/83769	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/83769		
H01L2224/8377	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8377		
H01L2224/83771	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/83771		
H01L2224/83772	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/83772		
H01L2224/83773	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/83773		
H01L2224/83776	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/83776		
H01L2224/83778	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/83778		
H01L2224/83779	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/83779		
H01L2224/8378	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8378		
H01L2224/83781	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/83781		
H01L2224/83783	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/83783		
H01L2224/83784	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/83784		
H01L2224/83786	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/83786		
H01L2224/83787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/83787		
H01L2224/83788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/83788		
H01L2224/8379	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8379		
H01L2224/83791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/83791		
H01L2224/83793	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/837&#160;-&#160;H01L2224/83791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/83793		
H01L2224/83794	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/837&#160;-&#160;H01L2224/83791	CPCONLY	H01L2224/83794		
H01L2224/83795	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/837&#160;-&#160;H01L2224/83791	CPCONLY	H01L2224/83795		
H01L2224/83798	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/83798		
H01L2224/83799	14	Shape or distribution of the fillers	CPCONLY	H01L2224/83799		3
H01L2224/838	10	Bonding techniques	CPCONLY	H01L2224/838		1189
H01L2224/83801	11	Soldering or alloying	CPCONLY	H01L2224/83801		3505
H01L2224/83805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/83805		520
H01L2224/8381	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8381		221
H01L2224/83815	12	Reflow soldering	CPCONLY	H01L2224/83815		780
H01L2224/8382	12	Diffusion bonding	CPCONLY	H01L2224/8382		180
H01L2224/83825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/83825		343
H01L2224/8383	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8383		131
H01L2224/8384	11	Sintering	CPCONLY	H01L2224/8384		1801
H01L2224/8385	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8385		3642
H01L2224/83851	12	being an anisotropic conductive adhesive	CPCONLY	H01L2224/83851		1569
H01L2224/83855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/83855		812
H01L2224/83856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/83856		573
H01L2224/83859	13	Localised curing of parts of the layer connector	CPCONLY	H01L2224/83859		43
H01L2224/83862	13	Heat curing	CPCONLY	H01L2224/83862		944
H01L2224/83865	13	Microwave curing	CPCONLY	H01L2224/83865		14
H01L2224/83868	13	Infrared [IR] curing	CPCONLY	H01L2224/83868		55
H01L2224/83871	13	Visible light curing	CPCONLY	H01L2224/83871		62
H01L2224/83874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/83874		319
H01L2224/83877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/83877		8
H01L2224/8388	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8388		188
H01L2224/83885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855&#160;-&#160;H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/83885		106
H01L2224/83886	11	Involving a self-assembly process, e.g. self-agglomeration of a material dispersed in a fluid	CPCONLY	H01L2224/83886		94
H01L2224/83887	12	Auxiliary means therefor, e.g. for self-assembly activation	CPCONLY	H01L2224/83887		17
H01L2224/83888	12	with special adaptation of the surface of the body to be connected, e.g. surface shape specially adapted for the self-assembly process	CPCONLY	H01L2224/83888		19
H01L2224/83889	12	involving the material of the bonding area, e.g. bonding pad	CPCONLY	H01L2224/83889		10
H01L2224/8389	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8389		121
H01L2224/83893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/83893		18
H01L2224/83894	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/83894		272
H01L2224/83895	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/83895		148
H01L2224/83896	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/83896		331
H01L2224/83897	11	Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like	CPCONLY	H01L2224/83897		16
H01L2224/83898	12	Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other	CPCONLY	H01L2224/83898		8
H01L2224/83899	13	using resilient parts in the layer connector or in the bonding area	CPCONLY	H01L2224/83899		2
H01L2224/839	10	with the layer connector not providing any mechanical bonding	CPCONLY	H01L2224/839		10
H01L2224/83901	11	Pressing the layer connector against the bonding areas by means of another connector	CPCONLY	H01L2224/83901		13
H01L2224/83902	12	by means of another layer connector	CPCONLY	H01L2224/83902		15
H01L2224/83903	12	by means of a bump connector	CPCONLY	H01L2224/83903		8
H01L2224/83904	12	by means of an encapsulation layer or foil	CPCONLY	H01L2224/83904		5
H01L2224/83905	10	Combinations of bonding methods provided for in at least two different groups from H01L2224/838&#160;-&#160;H01L2224/83904	CPCONLY	H01L2224/83905		43
H01L2224/83906	11	Specific sequence of method steps	CPCONLY	H01L2224/83906		42
H01L2224/83907	11	Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step	CPCONLY	H01L2224/83907		230
H01L2224/83908	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/83908		109
H01L2224/83909	10	Post-treatment of the layer connector or bonding area	CPCONLY	H01L2224/83909		18
H01L2224/8391	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8391		21
H01L2224/83911	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/83911		14
H01L2224/83912	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/83912		10
H01L2224/83913	12	Plasma cleaning	CPCONLY	H01L2224/83913		7
H01L2224/83914	12	Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge	CPCONLY	H01L2224/83914		6
H01L2224/83919	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8391&#160;-&#160;H01L2224/83914	CPCONLY	H01L2224/83919		
H01L2224/8392	11	Applying permanent coating, e.g. protective coating	CPCONLY	H01L2224/8392		48
H01L2224/8393	11	Reshaping	CPCONLY	H01L2224/8393		21
H01L2224/83931	12	by chemical means, e.g. etching	CPCONLY	H01L2224/83931		31
H01L2224/83935	12	by heating means, e.g. reflowing	CPCONLY	H01L2224/83935		12
H01L2224/83937	13	using a polychromatic heating lamp	CPCONLY	H01L2224/83937		
H01L2224/83939	13	using a laser	CPCONLY	H01L2224/83939		10
H01L2224/83941	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/83941		
H01L2224/83943	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/83943		
H01L2224/83945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/83945		1
H01L2224/83947	12	by mechanical means, e.g. "pull-and-cut", pressing, stamping	CPCONLY	H01L2224/83947		23
H01L2224/83948	11	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/83948		160
H01L2224/83951	11	Forming additional members, e.g. for reinforcing, fillet sealant	CPCONLY	H01L2224/83951		450
H01L2224/83986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/83986		225
H01L2224/84	9	using a strap connector	CPCONLY	H01L2224/84		516
H01L2224/84001	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/84001		15
H01L2224/84002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/84002		5
H01L2224/84005	11	being a temporary substrate	CPCONLY	H01L2224/84005		16
H01L2224/84007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the strap connector during or after the bonding process	CPCONLY	H01L2224/84007		23
H01L2224/84009	10	Pre-treatment of the connector and/or the bonding area	CPCONLY	H01L2224/84009		1
H01L2224/8401	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8401		
H01L2224/84011	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/84011		5
H01L2224/84012	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/84012		
H01L2224/84013	12	Plasma cleaning	CPCONLY	H01L2224/84013		1
H01L2224/84014	12	Thermal cleaning, e.g. decomposition, sublimation	CPCONLY	H01L2224/84014		
H01L2224/84019	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8401&#160;-&#160;H01L2224/84014	CPCONLY	H01L2224/84019		
H01L2224/8402	11	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/8402		5
H01L2224/8403	11	Reshaping	CPCONLY	H01L2224/8403		1
H01L2224/84031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/84031		1
H01L2224/84035	12	by heating means, e.g. "free-air-ball"	CPCONLY	H01L2224/84035		
H01L2224/84037	13	using a polychromatic heating lamp	CPCONLY	H01L2224/84037		
H01L2224/84039	13	using a laser	CPCONLY	H01L2224/84039		2
H01L2224/84041	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/84041		
H01L2224/84043	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/84043		
H01L2224/84045	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/84045		
H01L2224/84047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/84047		6
H01L2224/84048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/84048		1
H01L2224/84051	11	Forming additional members	CPCONLY	H01L2224/84051		5
H01L2224/84053	10	Bonding environment	CPCONLY	H01L2224/84053		
H01L2224/84054	11	Composition of the atmosphere	CPCONLY	H01L2224/84054		
H01L2224/84055	12	being oxidating	CPCONLY	H01L2224/84055		1
H01L2224/84065	12	being reducing	CPCONLY	H01L2224/84065		6
H01L2224/84075	12	being inert	CPCONLY	H01L2224/84075		1
H01L2224/84085	11	being a liquid (e.g. for fluidic self-assembly)	CPCONLY	H01L2224/84085		
H01L2224/8409	11	Vacuum	CPCONLY	H01L2224/8409		2
H01L2224/84091	11	Under pressure	CPCONLY	H01L2224/84091		1
H01L2224/84092	12	Atmospheric pressure	CPCONLY	H01L2224/84092		
H01L2224/84093	12	Transient conditions, e.g. gas-flow	CPCONLY	H01L2224/84093		
H01L2224/84095	11	Temperature settings	CPCONLY	H01L2224/84095		2
H01L2224/84096	12	Transient conditions	CPCONLY	H01L2224/84096		
H01L2224/84097	13	Heating	CPCONLY	H01L2224/84097		1
H01L2224/84098	13	Cooling	CPCONLY	H01L2224/84098		
H01L2224/84099	12	Ambient temperature	CPCONLY	H01L2224/84099		2
H01L2224/841	10	the connector being supplied to the parts to be connected in the bonding apparatus	CPCONLY	H01L2224/841		6
H01L2224/8411	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8411		2
H01L2224/8412	10	Aligning	CPCONLY	H01L2224/8412		4
H01L2224/84121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/84121		2
H01L2224/84122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/84122		1
H01L2224/84123	13	Shape or position of the body	CPCONLY	H01L2224/84123		
H01L2224/84125	13	Bonding areas on the body	CPCONLY	H01L2224/84125		
H01L2224/84127	13	Bonding areas outside the body	CPCONLY	H01L2224/84127		1
H01L2224/84129	13	Shape or position of the other item	CPCONLY	H01L2224/84129		2
H01L2224/8413	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8413		
H01L2224/84132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/84132		2
H01L2224/84136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/84136		11
H01L2224/84138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/84138		46
H01L2224/84143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/84143		13
H01L2224/84148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/84148		
H01L2224/84149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/84149		
H01L2224/8415	13	Rotational movements	CPCONLY	H01L2224/8415		
H01L2224/8416	13	Translational movements	CPCONLY	H01L2224/8416		
H01L2224/84169	12	being the upper part of the bonding apparatus, i.e. bonding head,	CPCONLY	H01L2224/84169		
H01L2224/8417	13	Rotational movements	CPCONLY	H01L2224/8417		
H01L2224/8418	13	Translational movements	CPCONLY	H01L2224/8418		
H01L2224/84181	14	connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch	CPCONLY	H01L2224/84181		2
H01L2224/84186	14	connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch	CPCONLY	H01L2224/84186		2
H01L2224/84191	14	connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches	CPCONLY	H01L2224/84191		2
H01L2224/84196	14	involving intermediate connecting steps before cutting the strap connector	CPCONLY	H01L2224/84196		
H01L2224/842	10	Applying energy for connecting	CPCONLY	H01L2224/842		10
H01L2224/84201	11	Compression bonding	CPCONLY	H01L2224/84201		15
H01L2224/84203	12	Thermocompression bonding	CPCONLY	H01L2224/84203		38
H01L2224/84205	12	Ultrasonic bonding	CPCONLY	H01L2224/84205		180
H01L2224/84206	13	Direction of oscillation	CPCONLY	H01L2224/84206		
H01L2224/84207	13	Thermosonic bonding	CPCONLY	H01L2224/84207		7
H01L2224/8421	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8421		6
H01L2224/84212	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/84212		
H01L2224/84214	12	using a laser	CPCONLY	H01L2224/84214		95
H01L2224/8423	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8423		
H01L2224/84232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/84232		
H01L2224/84234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/84234		
H01L2224/84236	11	using electro-static corona discharge	CPCONLY	H01L2224/84236		
H01L2224/84237	11	using an electron beam	CPCONLY	H01L2224/84237		
H01L2224/84238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/84238		2
H01L2224/8434	10	Bonding interfaces of the connector	CPCONLY	H01L2224/8434		
H01L2224/84345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/84345		247
H01L2224/84355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/84355		2
H01L2224/84359	11	Material	CPCONLY	H01L2224/84359		3
H01L2224/8436	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8436		1
H01L2224/84365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/84365		19
H01L2224/84375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/84375		1
H01L2224/84379	11	Material	CPCONLY	H01L2224/84379		2
H01L2224/8438	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8438		
H01L2224/84385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/84385		144
H01L2224/84395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/84395		1
H01L2224/84399	11	Material	CPCONLY	H01L2224/84399		9
H01L2224/844	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/844		12
H01L2224/84401	13	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/84401		
H01L2224/84405	14	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/84405		
H01L2224/84409	14	Indium [In] as principal constituent	CPCONLY	H01L2224/84409		
H01L2224/84411	14	Tin [Sn] as principal constituent	CPCONLY	H01L2224/84411		11
H01L2224/84413	14	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/84413		
H01L2224/84414	14	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/84414		
H01L2224/84416	14	Lead [Pb] as principal constituent	CPCONLY	H01L2224/84416		3
H01L2224/84417	13	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/84417		
H01L2224/84418	14	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/84418		2
H01L2224/8442	14	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8442		2
H01L2224/84423	14	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/84423		
H01L2224/84424	14	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/84424		28
H01L2224/84438	13	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/84438		4
H01L2224/84439	14	Silver [Ag] as principal constituent	CPCONLY	H01L2224/84439		32
H01L2224/84444	14	Gold [Au] as principal constituent	CPCONLY	H01L2224/84444		26
H01L2224/84447	14	Copper [Cu] as principal constituent	CPCONLY	H01L2224/84447		74
H01L2224/84449	14	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/84449		3
H01L2224/84455	14	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/84455		35
H01L2224/84457	14	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/84457		2
H01L2224/8446	14	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8446		9
H01L2224/84463	13	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/84463		
H01L2224/84464	14	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/84464		15
H01L2224/84466	14	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/84466		3
H01L2224/84469	14	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/84469		6
H01L2224/8447	14	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8447		
H01L2224/84471	14	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/84471		2
H01L2224/84472	14	Vanadium [V] as principal constituent	CPCONLY	H01L2224/84472		
H01L2224/84473	14	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/84473		
H01L2224/84476	14	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/84476		
H01L2224/84478	14	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/84478		
H01L2224/84479	14	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/84479		
H01L2224/8448	14	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8448		3
H01L2224/84481	14	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/84481		
H01L2224/84483	14	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/84483		
H01L2224/84484	14	Tungsten [W] as principal constituent	CPCONLY	H01L2224/84484		
H01L2224/84486	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/84486		1
H01L2224/84487	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/84487		
H01L2224/84488	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/84488		
H01L2224/8449	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8449		
H01L2224/84491	13	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/84491		
H01L2224/84493	12	with a principal constituent of the material being a solid not provided for in groups H01L2224/844&#160;-&#160;H01L2224/84491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/84493		
H01L2224/84494	12	with a principal constituent of the material being a liquid not provided for in groups H01L2224/844&#160;-&#160;H01L2224/84491	CPCONLY	H01L2224/84494		
H01L2224/84495	12	with a principal constituent of the material being a gas not provided for in groups H01L2224/844&#160;-&#160;H01L2224/84491	CPCONLY	H01L2224/84495		
H01L2224/84498	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/84498		
H01L2224/84499	13	Material of the matrix	CPCONLY	H01L2224/84499		4
H01L2224/845	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/845		
H01L2224/84501	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/84501		
H01L2224/84505	16	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/84505		
H01L2224/84509	16	Indium [In] as principal constituent	CPCONLY	H01L2224/84509		
H01L2224/84511	16	Tin [Sn] as principal constituent	CPCONLY	H01L2224/84511		
H01L2224/84513	16	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/84513		
H01L2224/84514	16	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/84514		
H01L2224/84516	16	Lead [Pb] as principal constituent	CPCONLY	H01L2224/84516		
H01L2224/84517	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/84517		
H01L2224/84518	16	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/84518		
H01L2224/8452	16	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8452		
H01L2224/84523	16	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/84523		
H01L2224/84524	16	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/84524		
H01L2224/84538	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/84538		
H01L2224/84539	16	Silver [Ag] as principal constituent	CPCONLY	H01L2224/84539		1
H01L2224/84544	16	Gold [Au] as principal constituent	CPCONLY	H01L2224/84544		1
H01L2224/84547	16	Copper [Cu] as principal constituent	CPCONLY	H01L2224/84547		
H01L2224/84549	16	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/84549		
H01L2224/84555	16	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/84555		1
H01L2224/84557	16	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/84557		
H01L2224/8456	16	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8456		
H01L2224/84563	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/84563		
H01L2224/84564	16	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/84564		1
H01L2224/84566	16	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/84566		
H01L2224/84569	16	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/84569		
H01L2224/8457	16	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8457		
H01L2224/84571	16	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/84571		
H01L2224/84572	16	Vanadium [V] as principal constituent	CPCONLY	H01L2224/84572		
H01L2224/84573	16	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/84573		
H01L2224/84576	16	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/84576		
H01L2224/84578	16	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/84578		
H01L2224/84579	16	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/84579		
H01L2224/8458	16	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8458		
H01L2224/84581	16	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/84581		
H01L2224/84583	16	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/84583		
H01L2224/84584	16	Tungsten [W] as principal constituent	CPCONLY	H01L2224/84584		
H01L2224/84586	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/84586		
H01L2224/84587	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/84587		
H01L2224/84588	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/84588		
H01L2224/8459	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8459		3
H01L2224/84591	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/84591		
H01L2224/84593	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/845&#160;-&#160;H01L2224/84591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/84593		
H01L2224/84594	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/845&#160;-&#160;H01L2224/84591	CPCONLY	H01L2224/84594		2
H01L2224/84595	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/845&#160;-&#160;H01L2224/84591	CPCONLY	H01L2224/84595		
H01L2224/84598	13	Fillers	CPCONLY	H01L2224/84598		
H01L2224/84599	14	Base material	CPCONLY	H01L2224/84599		
H01L2224/846	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/846		4
H01L2224/84601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/84601		
H01L2224/84605	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/84605		
H01L2224/84609	17	Indium [In] as principal constituent	CPCONLY	H01L2224/84609		
H01L2224/84611	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/84611		1
H01L2224/84613	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/84613		1
H01L2224/84614	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/84614		
H01L2224/84616	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/84616		
H01L2224/84617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/84617		
H01L2224/84618	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/84618		1
H01L2224/8462	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8462		
H01L2224/84623	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/84623		
H01L2224/84624	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/84624		1
H01L2224/84638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/84638		
H01L2224/84639	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/84639		7
H01L2224/84644	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/84644		2
H01L2224/84647	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/84647		3
H01L2224/84649	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/84649		
H01L2224/84655	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/84655		1
H01L2224/84657	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/84657		
H01L2224/8466	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8466		
H01L2224/84663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/84663		
H01L2224/84664	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/84664		
H01L2224/84666	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/84666		
H01L2224/84669	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/84669		
H01L2224/8467	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8467		
H01L2224/84671	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/84671		
H01L2224/84672	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/84672		
H01L2224/84673	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/84673		
H01L2224/84676	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/84676		
H01L2224/84678	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/84678		
H01L2224/84679	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/84679		
H01L2224/8468	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8468		
H01L2224/84681	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/84681		
H01L2224/84683	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/84683		
H01L2224/84684	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/84684		
H01L2224/84686	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/84686		2
H01L2224/84687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/84687		1
H01L2224/84688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/84688		1
H01L2224/8469	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8469		1
H01L2224/84691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/84691		
H01L2224/84693	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/846&#160;-&#160;H01L2224/84691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/84693		
H01L2224/84694	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/846&#160;-&#160;H01L2224/84691	CPCONLY	H01L2224/84694		
H01L2224/84695	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/846&#160;-&#160;H01L2224/84691	CPCONLY	H01L2224/84695		
H01L2224/84698	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/84698		
H01L2224/84699	14	Coating material	CPCONLY	H01L2224/84699		1
H01L2224/847	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2224/847		
H01L2224/84701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/84701		
H01L2224/84705	17	Gallium [Ga] as principal constituent	CPCONLY	H01L2224/84705		
H01L2224/84709	17	Indium [In] as principal constituent	CPCONLY	H01L2224/84709		
H01L2224/84711	17	Tin [Sn] as principal constituent	CPCONLY	H01L2224/84711		
H01L2224/84713	17	Bismuth [Bi] as principal constituent	CPCONLY	H01L2224/84713		
H01L2224/84714	17	Thallium [Tl] as principal constituent	CPCONLY	H01L2224/84714		
H01L2224/84716	17	Lead [Pb] as principal constituent	CPCONLY	H01L2224/84716		
H01L2224/84717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/84717		
H01L2224/84718	17	Zinc [Zn] as principal constituent	CPCONLY	H01L2224/84718		
H01L2224/8472	17	Antimony [Sb] as principal constituent	CPCONLY	H01L2224/8472		
H01L2224/84723	17	Magnesium [Mg] as principal constituent	CPCONLY	H01L2224/84723		
H01L2224/84724	17	Aluminium [Al] as principal constituent	CPCONLY	H01L2224/84724		
H01L2224/84738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/84738		
H01L2224/84739	17	Silver [Ag] as principal constituent	CPCONLY	H01L2224/84739		
H01L2224/84744	17	Gold [Au] as principal constituent	CPCONLY	H01L2224/84744		
H01L2224/84747	17	Copper [Cu] as principal constituent	CPCONLY	H01L2224/84747		
H01L2224/84749	17	Manganese [Mn] as principal constituent	CPCONLY	H01L2224/84749		
H01L2224/84755	17	Nickel [Ni] as principal constituent	CPCONLY	H01L2224/84755		
H01L2224/84757	17	Cobalt [Co] as principal constituent	CPCONLY	H01L2224/84757		
H01L2224/8476	17	Iron [Fe] as principal constituent	CPCONLY	H01L2224/8476		
H01L2224/84763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/84763		
H01L2224/84764	17	Palladium [Pd] as principal constituent	CPCONLY	H01L2224/84764		
H01L2224/84766	17	Titanium [Ti] as principal constituent	CPCONLY	H01L2224/84766		
H01L2224/84769	17	Platinum [Pt] as principal constituent	CPCONLY	H01L2224/84769		
H01L2224/8477	17	Zirconium [Zr] as principal constituent	CPCONLY	H01L2224/8477		
H01L2224/84771	17	Chromium [Cr] as principal constituent	CPCONLY	H01L2224/84771		
H01L2224/84772	17	Vanadium [V] as principal constituent	CPCONLY	H01L2224/84772		
H01L2224/84773	17	Rhodium [Rh] as principal constituent	CPCONLY	H01L2224/84773		
H01L2224/84776	17	Ruthenium [Ru] as principal constituent	CPCONLY	H01L2224/84776		
H01L2224/84778	17	Iridium [Ir] as principal constituent	CPCONLY	H01L2224/84778		
H01L2224/84779	17	Niobium [Nb] as principal constituent	CPCONLY	H01L2224/84779		
H01L2224/8478	17	Molybdenum [Mo] as principal constituent	CPCONLY	H01L2224/8478		
H01L2224/84781	17	Tantalum [Ta] as principal constituent	CPCONLY	H01L2224/84781		
H01L2224/84783	17	Rhenium [Re] as principal constituent	CPCONLY	H01L2224/84783		
H01L2224/84784	17	Tungsten [W] as principal constituent	CPCONLY	H01L2224/84784		
H01L2224/84786	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/84786		
H01L2224/84787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/84787		
H01L2224/84788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/84788		
H01L2224/8479	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8479		
H01L2224/84791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/84791		
H01L2224/84793	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/847&#160;-&#160;H01L2224/84791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/84793		
H01L2224/84794	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/847&#160;-&#160;H01L2224/84791	CPCONLY	H01L2224/84794		
H01L2224/84795	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/847&#160;-&#160;H01L2224/84791	CPCONLY	H01L2224/84795		
H01L2224/84798	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/84798		
H01L2224/84799	14	Shape or distribution of the fillers	CPCONLY	H01L2224/84799		
H01L2224/848	10	Bonding techniques	CPCONLY	H01L2224/848		16
H01L2224/84801	11	Soldering or alloying	CPCONLY	H01L2224/84801		1685
H01L2224/84805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/84805		5
H01L2224/8481	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8481		9
H01L2224/84815	12	Reflow soldering	CPCONLY	H01L2224/84815		129
H01L2224/8482	12	Diffusion bonding	CPCONLY	H01L2224/8482		16
H01L2224/84825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/84825		14
H01L2224/8483	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8483		2
H01L2224/8484	11	Sintering	CPCONLY	H01L2224/8484		236
H01L2224/8485	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8485		543
H01L2224/84855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/84855		5
H01L2224/84856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/84856		1
H01L2224/84859	13	Localised curing of parts of the connector	CPCONLY	H01L2224/84859		
H01L2224/84862	13	Heat curing	CPCONLY	H01L2224/84862		12
H01L2224/84865	13	Microwave curing	CPCONLY	H01L2224/84865		
H01L2224/84868	13	Infrared [IR] curing	CPCONLY	H01L2224/84868		
H01L2224/84871	13	Visible light curing	CPCONLY	H01L2224/84871		
H01L2224/84874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/84874		1
H01L2224/84877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/84877		
H01L2224/8488	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8488		
H01L2224/84885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/84855&#160;-&#160;H01L2224/8488, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/84885		
H01L2224/8489	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8489		1
H01L2224/84893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/84893		1
H01L2224/84895	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/84895		2
H01L2224/84897	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/84897		5
H01L2224/84898	12	between electrically insulating surfaces, e.g. oxide or nitride layersg	CPCONLY	H01L2224/84898		
H01L2224/84899	11	Combinations of bonding methods provided for in at least two different groups from H01L2224/848&#160;-&#160;H01L2224/84898	CPCONLY	H01L2224/84899		3
H01L2224/849	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/849		3
H01L2224/84909	10	Post-treatment of the connector or bonding area	CPCONLY	H01L2224/84909		
H01L2224/8491	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8491		5
H01L2224/84911	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/84911		
H01L2224/84912	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/84912		
H01L2224/84913	12	Plasma cleaning	CPCONLY	H01L2224/84913		
H01L2224/84914	12	Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge	CPCONLY	H01L2224/84914		
H01L2224/84919	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8491&#160;-&#160;H01L2224/84914	CPCONLY	H01L2224/84919		
H01L2224/8492	11	Applying permanent coating, e.g. protective coating	CPCONLY	H01L2224/8492		18
H01L2224/8493	11	Reshaping, e.g. for severing the strap, modifying the loop shape	CPCONLY	H01L2224/8493		5
H01L2224/84931	12	by chemical means, e.g. etching	CPCONLY	H01L2224/84931		4
H01L2224/84935	12	by heating means, e.g. reflowing	CPCONLY	H01L2224/84935		2
H01L2224/84937	13	using a polychromatic heating lamp	CPCONLY	H01L2224/84937		
H01L2224/84939	13	using a laser	CPCONLY	H01L2224/84939		2
H01L2224/84941	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/84941		
H01L2224/84943	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/84943		
H01L2224/84945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/84945		
H01L2224/84947	12	by mechanical means, e.g. pressing, stamping	CPCONLY	H01L2224/84947		7
H01L2224/84948	11	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/84948		2
H01L2224/84951	11	Forming additional members, e.g. for reinforcing	CPCONLY	H01L2224/84951		9
H01L2224/84986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/84986		23
H01L2224/85	9	using a wire connector	CPCONLY	H01L2224/85		9603
H01L2224/85001	10	involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/85001		456
H01L2224/85002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/85002		15
H01L2224/85005	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/85005		223
H01L2224/85007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process	CPCONLY	H01L2224/85007		74
H01L2224/85009	10	Pre-treatment of the connector or the bonding area	CPCONLY	H01L2224/85009		417
H01L2224/8501	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8501		109
H01L2224/85011	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/85011		58
H01L2224/85012	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/85012		23
H01L2224/85013	12	Plasma cleaning	CPCONLY	H01L2224/85013		169
H01L2224/85014	12	Thermal cleaning, e.g. decomposition, sublimation	CPCONLY	H01L2224/85014		11
H01L2224/85016	13	using a laser	CPCONLY	H01L2224/85016		15
H01L2224/85017	12	Electron beam cleaning	CPCONLY	H01L2224/85017		2
H01L2224/85019	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8501&#160;-&#160;H01L2224/85014	CPCONLY	H01L2224/85019		3
H01L2224/8502	11	Applying permanent coating, e.g. in-situ coating	CPCONLY	H01L2224/8502		45
H01L2224/8503	11	Reshaping, e.g. forming the ball or the wedge of the wire connector	CPCONLY	H01L2224/8503		178
H01L2224/85031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/85031		3
H01L2224/85035	12	by heating means, e.g. "free-air-ball"	CPCONLY	H01L2224/85035		37
H01L2224/85037	13	using a polychromatic heating lamp	CPCONLY	H01L2224/85037		
H01L2224/85039	13	using a laser	CPCONLY	H01L2224/85039		15
H01L2224/85041	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/85041		1
H01L2224/85043	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/85043		117
H01L2224/85045	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/85045		1328
H01L2224/85047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/85047		39
H01L2224/85048	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/85048		60
H01L2224/85051	11	Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections	CPCONLY	H01L2224/85051		671
H01L2224/85053	10	Bonding environment	CPCONLY	H01L2224/85053		2
H01L2224/85054	11	Composition of the atmosphere	CPCONLY	H01L2224/85054		16
H01L2224/85055	12	being oxidating	CPCONLY	H01L2224/85055		8
H01L2224/85065	12	being reducing	CPCONLY	H01L2224/85065		143
H01L2224/85075	12	being inert	CPCONLY	H01L2224/85075		385
H01L2224/85085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/85085		
H01L2224/8509	11	Vacuum	CPCONLY	H01L2224/8509		19
H01L2224/85091	11	Under pressure	CPCONLY	H01L2224/85091		5
H01L2224/85092	12	Atmospheric pressure	CPCONLY	H01L2224/85092		1
H01L2224/85093	12	Transient conditions, e.g. gas-flow	CPCONLY	H01L2224/85093		3
H01L2224/85095	11	Temperature settings	CPCONLY	H01L2224/85095		4
H01L2224/85096	12	Transient conditions	CPCONLY	H01L2224/85096		5
H01L2224/85097	13	Heating	CPCONLY	H01L2224/85097		6
H01L2224/85098	13	Cooling	CPCONLY	H01L2224/85098		3
H01L2224/85099	12	Ambient temperature	CPCONLY	H01L2224/85099		113
H01L2224/851	10	the connector being supplied to the parts to be connected in the bonding apparatus	CPCONLY	H01L2224/851		1482
H01L2224/8511	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8511		7
H01L2224/8512	10	Aligning	CPCONLY	H01L2224/8512		18
H01L2224/85121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/85121		51
H01L2224/85122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/85122		5
H01L2224/85123	13	Shape or position of the body	CPCONLY	H01L2224/85123		6
H01L2224/85125	13	Bonding areas on the body	CPCONLY	H01L2224/85125		10
H01L2224/85127	13	Bonding areas outside the body	CPCONLY	H01L2224/85127		6
H01L2224/85129	13	Shape or position of the other item	CPCONLY	H01L2224/85129		4
H01L2224/8513	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8513		57
H01L2224/85132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/85132		24
H01L2224/85136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/85136		8
H01L2224/85138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/85138		20
H01L2224/85143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/85143		2
H01L2224/85148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/85148		480
H01L2224/85149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/85149		1
H01L2224/8515	13	Rotational movements	CPCONLY	H01L2224/8515		2
H01L2224/8516	13	Translational movements	CPCONLY	H01L2224/8516		2
H01L2224/85169	12	being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge	CPCONLY	H01L2224/85169		9
H01L2224/8517	13	Rotational movements	CPCONLY	H01L2224/8517		17
H01L2224/8518	13	Translational movements	CPCONLY	H01L2224/8518		76
H01L2224/85181	14	connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch	CPCONLY	H01L2224/85181		2714
H01L2224/85186	14	connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch	CPCONLY	H01L2224/85186		494
H01L2224/85191	14	connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches	CPCONLY	H01L2224/85191		122
H01L2224/85196	14	involving intermediate connecting steps before cutting the wire connector	CPCONLY	H01L2224/85196		25
H01L2224/852	10	Applying energy for connecting	CPCONLY	H01L2224/852		42
H01L2224/85201	11	Compression bonding	CPCONLY	H01L2224/85201		638
H01L2224/85203	12	Thermocompression bonding	CPCONLY	H01L2224/85203		1038
H01L2224/85205	12	Ultrasonic bonding	CPCONLY	H01L2224/85205		4062
H01L2224/85206	13	Direction of oscillation	CPCONLY	H01L2224/85206		87
H01L2224/85207	13	Thermosonic bonding	CPCONLY	H01L2224/85207		644
H01L2224/8521	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8521		3
H01L2224/85212	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/85212		3
H01L2224/85214	12	using a laser	CPCONLY	H01L2224/85214		198
H01L2224/8523	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8523		5
H01L2224/85232	11	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/85232		2
H01L2224/85234	11	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/85234		4
H01L2224/85236	11	using electro-static corona discharge	CPCONLY	H01L2224/85236		6
H01L2224/85237	11	using electron beam	CPCONLY	H01L2224/85237		2
H01L2224/85238	11	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/85238		61
H01L2224/8534	10	Bonding interfaces of the connector	CPCONLY	H01L2224/8534		7
H01L2224/85345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/85345		58
H01L2224/85355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/85355		13
H01L2224/85359	11	Material	CPCONLY	H01L2224/85359		8
H01L2224/8536	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8536		6
H01L2224/85365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/85365		76
H01L2224/85375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/85375		172
H01L2224/85379	11	Material	CPCONLY	H01L2224/85379		6
H01L2224/8538	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8538		12
H01L2224/85385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/85385		314
H01L2224/85395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/85395		26
H01L2224/85399	11	Material	CPCONLY	H01L2224/85399		4524
H01L2224/854	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/854		106
H01L2224/85401	13	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/85401		7
H01L2224/85405	14	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/85405		
H01L2224/85409	14	Indium (In) as principal constituent	CPCONLY	H01L2224/85409		7
H01L2224/85411	14	Tin (Sn) as principal constituent	CPCONLY	H01L2224/85411		100
H01L2224/85413	14	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/85413		8
H01L2224/85414	14	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/85414		
H01L2224/85416	14	Lead (Pb) as principal constituent	CPCONLY	H01L2224/85416		23
H01L2224/85417	13	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/85417		1
H01L2224/85418	14	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/85418		12
H01L2224/8542	14	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/8542		1
H01L2224/85423	14	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/85423		25
H01L2224/85424	14	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/85424		364
H01L2224/85438	13	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/85438		5
H01L2224/85439	14	Silver (Ag) as principal constituent	CPCONLY	H01L2224/85439		813
H01L2224/85444	14	Gold (Au) as principal constituent	CPCONLY	H01L2224/85444		1087
H01L2224/85447	14	Copper (Cu) as principal constituent	CPCONLY	H01L2224/85447		626
H01L2224/85449	14	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/85449		3
H01L2224/85455	14	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/85455		468
H01L2224/85457	14	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/85457		9
H01L2224/8546	14	Iron (Fe) as principal constituent	CPCONLY	H01L2224/8546		51
H01L2224/85463	13	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/85463		7
H01L2224/85464	14	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/85464		406
H01L2224/85466	14	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/85466		40
H01L2224/85469	14	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/85469		51
H01L2224/8547	14	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/8547		93
H01L2224/85471	14	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/85471		17
H01L2224/85472	14	Vanadium (V) as principal constituent	CPCONLY	H01L2224/85472		2
H01L2224/85473	14	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/85473		7
H01L2224/85476	14	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/85476		5
H01L2224/85478	14	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/85478		4
H01L2224/85479	14	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/85479		1
H01L2224/8548	14	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/8548		10
H01L2224/85481	14	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/85481		8
H01L2224/85483	14	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/85483		
H01L2224/85484	14	Tungsten (W) as principal constituent	CPCONLY	H01L2224/85484		38
H01L2224/85486	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/85486		5
H01L2224/85487	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/85487		1
H01L2224/85488	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/85488		
H01L2224/8549	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8549		4
H01L2224/85491	13	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/85491		
H01L2224/85493	12	with a principal constituent of the material being a solid not provided for in groups H01L2224/854&#160;-&#160;H01L2224/85491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/85493		2
H01L2224/85494	12	with a principal constituent of the material being a liquid not provided for in groups H01L2224/854&#160;-&#160;H01L2224/85491	CPCONLY	H01L2224/85494		
H01L2224/85495	12	with a principal constituent of the material being a gas not provided for in groups H01L2224/854&#160;-&#160;H01L2224/85491	CPCONLY	H01L2224/85495		
H01L2224/85498	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/85498		
H01L2224/85499	13	Material of the matrix	CPCONLY	H01L2224/85499		3
H01L2224/855	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/855		
H01L2224/85501	15	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/85501		
H01L2224/85505	16	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/85505		
H01L2224/85509	16	Indium (In) as principal constituent	CPCONLY	H01L2224/85509		
H01L2224/85511	16	Tin (Sn) as principal constituent	CPCONLY	H01L2224/85511		
H01L2224/85513	16	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/85513		
H01L2224/85514	16	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/85514		
H01L2224/85516	16	Lead (Pb) as principal constituent	CPCONLY	H01L2224/85516		
H01L2224/85517	15	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/85517		
H01L2224/85518	16	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/85518		
H01L2224/8552	16	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/8552		
H01L2224/85523	16	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/85523		
H01L2224/85524	16	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/85524		
H01L2224/85538	15	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/85538		
H01L2224/85539	16	Silver (Ag) as principal constituent	CPCONLY	H01L2224/85539		1
H01L2224/85544	16	Gold (Au) as principal constituent	CPCONLY	H01L2224/85544		2
H01L2224/85547	16	Copper (Cu) as principal constituent	CPCONLY	H01L2224/85547		2
H01L2224/85549	16	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/85549		
H01L2224/85555	16	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/85555		
H01L2224/85557	16	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/85557		
H01L2224/8556	16	Iron (Fe) as principal constituent	CPCONLY	H01L2224/8556		
H01L2224/85563	15	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/85563		
H01L2224/85564	16	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/85564		6
H01L2224/85566	16	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/85566		
H01L2224/85569	16	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/85569		
H01L2224/8557	16	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/8557		
H01L2224/85571	16	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/85571		
H01L2224/85572	16	Vanadium (V) as principal constituent	CPCONLY	H01L2224/85572		
H01L2224/85573	16	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/85573		
H01L2224/85576	16	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/85576		
H01L2224/85578	16	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/85578		
H01L2224/85579	16	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/85579		
H01L2224/8558	16	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/8558		
H01L2224/85581	16	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/85581		
H01L2224/85583	16	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/85583		
H01L2224/85584	16	Tungsten (W) as principal constituent	CPCONLY	H01L2224/85584		
H01L2224/85586	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/85586		
H01L2224/85587	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/85587		
H01L2224/85588	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/85588		
H01L2224/8559	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8559		2
H01L2224/85591	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/85591		
H01L2224/85593	14	with a principal constituent of the material being a solid not provided for in groups H01L2224/855&#160;-&#160;H01L2224/85591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/85593		
H01L2224/85594	14	with a principal constituent of the material being a liquid not provided for in groups H01L2224/855&#160;-&#160;H01L2224/85591	CPCONLY	H01L2224/85594		1
H01L2224/85595	14	with a principal constituent of the material being a gas not provided for in groups H01L2224/855&#160;-&#160;H01L2224/85591	CPCONLY	H01L2224/85595		
H01L2224/85598	13	Fillers	CPCONLY	H01L2224/85598		
H01L2224/85599	14	Base material	CPCONLY	H01L2224/85599		
H01L2224/856	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/856		1
H01L2224/85601	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/85601		
H01L2224/85605	17	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/85605		
H01L2224/85609	17	Indium (In) as principal constituent	CPCONLY	H01L2224/85609		
H01L2224/85611	17	Tin (Sn) as principal constituent	CPCONLY	H01L2224/85611		2
H01L2224/85613	17	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/85613		
H01L2224/85614	17	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/85614		
H01L2224/85616	17	Lead (Pb) as principal constituent	CPCONLY	H01L2224/85616		
H01L2224/85617	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/85617		
H01L2224/85618	17	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/85618		
H01L2224/8562	17	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/8562		
H01L2224/85623	17	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/85623		
H01L2224/85624	17	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/85624		
H01L2224/85638	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/85638		
H01L2224/85639	17	Silver (Ag) as principal constituent	CPCONLY	H01L2224/85639		10
H01L2224/85644	17	Gold (Au) as principal constituent	CPCONLY	H01L2224/85644		3
H01L2224/85647	17	Copper (Cu) as principal constituent	CPCONLY	H01L2224/85647		2
H01L2224/85649	17	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/85649		
H01L2224/85655	17	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/85655		
H01L2224/85657	17	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/85657		
H01L2224/8566	17	Iron (Fe) as principal constituent	CPCONLY	H01L2224/8566		
H01L2224/85663	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/85663		
H01L2224/85664	17	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/85664		11
H01L2224/85666	17	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/85666		
H01L2224/85669	17	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/85669		1
H01L2224/8567	17	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/8567		
H01L2224/85671	17	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/85671		
H01L2224/85672	17	Vanadium (V) as principal constituent	CPCONLY	H01L2224/85672		
H01L2224/85673	17	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/85673		
H01L2224/85676	17	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/85676		
H01L2224/85678	17	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/85678		
H01L2224/85679	17	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/85679		
H01L2224/8568	17	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/8568		
H01L2224/85681	17	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/85681		
H01L2224/85683	17	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/85683		
H01L2224/85684	17	Tungsten (W) as principal constituent	CPCONLY	H01L2224/85684		
H01L2224/85686	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/85686		
H01L2224/85687	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/85687		
H01L2224/85688	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/85688		
H01L2224/8569	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8569		
H01L2224/85691	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/85691		
H01L2224/85693	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/856&#160;-&#160;H01L2224/85691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/85693		
H01L2224/85694	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/856&#160;-&#160;H01L2224/85691	CPCONLY	H01L2224/85694		
H01L2224/85695	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/856&#160;-&#160;H01L2224/85691	CPCONLY	H01L2224/85695		2
H01L2224/85698	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/85698		
H01L2224/85699	14	Coating material	CPCONLY	H01L2224/85699		
H01L2224/857	15	with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof	CPCONLY	H01L2224/857		
H01L2224/85701	16	the principal constituent melting at a temperature of less than 400&#176;C	CPCONLY	H01L2224/85701		
H01L2224/85705	17	Gallium (Ga) as principal constituent	CPCONLY	H01L2224/85705		
H01L2224/85709	17	Indium (In) as principal constituent	CPCONLY	H01L2224/85709		
H01L2224/85711	17	Tin (Sn) as principal constituent	CPCONLY	H01L2224/85711		
H01L2224/85713	17	Bismuth (Bi) as principal constituent	CPCONLY	H01L2224/85713		
H01L2224/85714	17	Thallium (Tl) as principal constituent	CPCONLY	H01L2224/85714		
H01L2224/85716	17	Lead (Pb) as principal constituent	CPCONLY	H01L2224/85716		
H01L2224/85717	16	the principal constituent melting at a temperature of greater than or equal to 400&#176;C and less than 950&#176;C	CPCONLY	H01L2224/85717		
H01L2224/85718	17	Zinc (Zn) as principal constituent	CPCONLY	H01L2224/85718		
H01L2224/8572	17	Antimony (Sb) as principal constituent	CPCONLY	H01L2224/8572		
H01L2224/85723	17	Magnesium (Mg) as principal constituent	CPCONLY	H01L2224/85723		
H01L2224/85724	17	Aluminium (Al) as principal constituent	CPCONLY	H01L2224/85724		
H01L2224/85738	16	the principal constituent melting at a temperature of greater than or equal to 950&#176;C and less than 1550&#176;C	CPCONLY	H01L2224/85738		
H01L2224/85739	17	Silver (Ag) as principal constituent	CPCONLY	H01L2224/85739		
H01L2224/85744	17	Gold (Au) as principal constituent	CPCONLY	H01L2224/85744		1
H01L2224/85747	17	Copper (Cu) as principal constituent	CPCONLY	H01L2224/85747		
H01L2224/85749	17	Manganese (Mn) as principal constituent	CPCONLY	H01L2224/85749		
H01L2224/85755	17	Nickel (Ni) as principal constituent	CPCONLY	H01L2224/85755		1
H01L2224/85757	17	Cobalt (Co) as principal constituent	CPCONLY	H01L2224/85757		
H01L2224/8576	17	Iron (Fe) as principal constituent	CPCONLY	H01L2224/8576		
H01L2224/85763	16	the principal constituent melting at a temperature of greater than 1550&#176;C	CPCONLY	H01L2224/85763		
H01L2224/85764	17	Palladium (Pd) as principal constituent	CPCONLY	H01L2224/85764		
H01L2224/85766	17	Titanium (Ti) as principal constituent	CPCONLY	H01L2224/85766		
H01L2224/85769	17	Platinum (Pt) as principal constituent	CPCONLY	H01L2224/85769		
H01L2224/8577	17	Zirconium (Zr) as principal constituent	CPCONLY	H01L2224/8577		
H01L2224/85771	17	Chromium (Cr) as principal constituent	CPCONLY	H01L2224/85771		
H01L2224/85772	17	Vanadium (V) as principal constituent	CPCONLY	H01L2224/85772		
H01L2224/85773	17	Rhodium (Rh) as principal constituent	CPCONLY	H01L2224/85773		
H01L2224/85776	17	Ruthenium (Ru) as principal constituent	CPCONLY	H01L2224/85776		
H01L2224/85778	17	Iridium (Ir) as principal constituent	CPCONLY	H01L2224/85778		
H01L2224/85779	17	Niobium (Nb) as principal constituent	CPCONLY	H01L2224/85779		
H01L2224/8578	17	Molybdenum (Mo) as principal constituent	CPCONLY	H01L2224/8578		
H01L2224/85781	17	Tantalum (Ta) as principal constituent	CPCONLY	H01L2224/85781		
H01L2224/85783	17	Rhenium (Re) as principal constituent	CPCONLY	H01L2224/85783		
H01L2224/85784	17	Tungsten (W) as principal constituent	CPCONLY	H01L2224/85784		
H01L2224/85786	15	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2224/85786		
H01L2224/85787	16	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2224/85787		
H01L2224/85788	16	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2224/85788		
H01L2224/8579	15	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2224/8579		
H01L2224/85791	16	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2224/85791		
H01L2224/85793	15	with a principal constituent of the material being a solid not provided for in groups H01L2224/857&#160;-&#160;H01L2224/85791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2224/85793		
H01L2224/85794	15	with a principal constituent of the material being a liquid not provided for in groups H01L2224/857&#160;-&#160;H01L2224/85791	CPCONLY	H01L2224/85794		
H01L2224/85795	15	with a principal constituent of the material being a gas not provided for in groups H01L2224/857&#160;-&#160;H01L2224/85791	CPCONLY	H01L2224/85795		
H01L2224/85798	15	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2224/85798		
H01L2224/85799	13	Shape or distribution of the fillers	CPCONLY	H01L2224/85799		
H01L2224/858	10	Bonding techniques	CPCONLY	H01L2224/858		40
H01L2224/85801	11	Soldering or alloying	CPCONLY	H01L2224/85801		224
H01L2224/85805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/85805		16
H01L2224/8581	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8581		15
H01L2224/85815	12	Reflow soldering	CPCONLY	H01L2224/85815		80
H01L2224/8582	12	Diffusion bonding	CPCONLY	H01L2224/8582		7
H01L2224/85825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/85825		4
H01L2224/8583	13	Solid-solid interdiffusion, e.g. "direct bonding"	CPCONLY	H01L2224/8583		4
H01L2224/8584	11	Sintering	CPCONLY	H01L2224/8584		55
H01L2224/8585	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8585		47
H01L2224/85855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/85855		8
H01L2224/85856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/85856		1
H01L2224/85859	13	Localised curing of parts of the connector	CPCONLY	H01L2224/85859		
H01L2224/85862	13	Heat curing	CPCONLY	H01L2224/85862		5
H01L2224/85865	13	Microwave curing	CPCONLY	H01L2224/85865		
H01L2224/85868	13	Infrared [IR] curing	CPCONLY	H01L2224/85868		2
H01L2224/85871	13	Visible light curing	CPCONLY	H01L2224/85871		6
H01L2224/85874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/85874		3
H01L2224/85877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/85877		
H01L2224/8588	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8588		3
H01L2224/85885	12	Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/85855&#160;-&#160;H01L2224/8588, e.g. for hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/85885		
H01L2224/8589	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8589		2
H01L2224/85893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/85893		
H01L2224/85895	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/85895		7
H01L2224/85897	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/85897		6
H01L2224/85898	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/85898		4
H01L2224/85899	11	Combinations of bonding methods provided for in at least two different groups from H01L2224/858&#160;-&#160;H01L2224/85898	CPCONLY	H01L2224/85899		5
H01L2224/859	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/859		997
H01L2224/85909	10	Post-treatment of the connector or wire bonding area	CPCONLY	H01L2224/85909		316
H01L2224/8591	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8591		7
H01L2224/85911	12	Chemical cleaning, e.g. etching, flux	CPCONLY	H01L2224/85911		
H01L2224/85912	12	Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow	CPCONLY	H01L2224/85912		
H01L2224/85913	12	Plasma cleaning	CPCONLY	H01L2224/85913		15
H01L2224/85914	12	Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge	CPCONLY	H01L2224/85914		
H01L2224/85916	13	using a laser	CPCONLY	H01L2224/85916		
H01L2224/85917	12	Electron beam cleaning	CPCONLY	H01L2224/85917		
H01L2224/85919	12	Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8591&#160;-&#160;H01L2224/85914	CPCONLY	H01L2224/85919		
H01L2224/8592	11	Applying permanent coating, e.g. protective coating	CPCONLY	H01L2224/8592		4414
H01L2224/8593	11	Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape	CPCONLY	H01L2224/8593		33
H01L2224/85931	12	by chemical means, e.g. etching	CPCONLY	H01L2224/85931		6
H01L2224/85935	12	by heating means, e.g. reflowing	CPCONLY	H01L2224/85935		6
H01L2224/85937	13	using a polychromatic heating lamp	CPCONLY	H01L2224/85937		
H01L2224/85939	13	using a laser	CPCONLY	H01L2224/85939		15
H01L2224/85941	13	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/85941		
H01L2224/85943	13	using a flame torch, e.g. hydrogen torch	CPCONLY	H01L2224/85943		1
H01L2224/85945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/85945		
H01L2224/85947	12	by mechanical means, e.g. "pull-and-cut", pressing, stamping	CPCONLY	H01L2224/85947		133
H01L2224/85948	11	Thermal treatments, e.g. annealing, controlled cooling	CPCONLY	H01L2224/85948		55
H01L2224/85951	11	Forming additional members, e.g. for reinforcing	CPCONLY	H01L2224/85951		381
H01L2224/85986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/85986		333
H01L2224/86	9	using tape automated bonding [TAB]	CPCONLY	H01L2224/86		211
H01L2224/86001	10	involving a temporary auxiliary member not forming part of the bonding apparatus	CPCONLY	H01L2224/86001		
H01L2224/86002	11	being a removable or sacrificial coating	CPCONLY	H01L2224/86002		
H01L2224/86005	11	being a temporary or sacrificial substrate	CPCONLY	H01L2224/86005		2
H01L2224/86007	10	involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the TAB connector during or after the bonding process	CPCONLY	H01L2224/86007		3
H01L2224/86009	10	Pre-treatment of the connector or the bonding area	CPCONLY	H01L2224/86009		
H01L2224/8601	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8601		1
H01L2224/8603	11	Reshaping	CPCONLY	H01L2224/8603		
H01L2224/86031	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/86031		
H01L2224/86035	12	by heating	CPCONLY	H01L2224/86035		
H01L2224/86039	13	using a laser	CPCONLY	H01L2224/86039		
H01L2224/86045	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/86045		
H01L2224/86047	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/86047		
H01L2224/86048	11	Thermal treatment, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/86048		
H01L2224/86051	11	Forming additional members	CPCONLY	H01L2224/86051		
H01L2224/86053	10	Bonding environment	CPCONLY	H01L2224/86053		
H01L2224/86054	11	Composition of the atmosphere	CPCONLY	H01L2224/86054		
H01L2224/86085	11	being a liquid, e.g. fluidic self-assembly	CPCONLY	H01L2224/86085		1
H01L2224/8609	11	Vacuum	CPCONLY	H01L2224/8609		
H01L2224/86091	11	Under pressure	CPCONLY	H01L2224/86091		
H01L2224/86095	11	Temperature settings	CPCONLY	H01L2224/86095		
H01L2224/86096	12	Transient conditions	CPCONLY	H01L2224/86096		
H01L2224/86097	13	Heating	CPCONLY	H01L2224/86097		
H01L2224/86098	13	Cooling	CPCONLY	H01L2224/86098		
H01L2224/86099	12	Ambient temperature	CPCONLY	H01L2224/86099		
H01L2224/861	10	the connector being supplied to the parts to be connected in the bonding apparatus	CPCONLY	H01L2224/861		1
H01L2224/8611	10	involving protection against electrical discharge, e.g. removing electrostatic charge	CPCONLY	H01L2224/8611		2
H01L2224/8612	10	Aligning	CPCONLY	H01L2224/8612		2
H01L2224/86121	11	Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors	CPCONLY	H01L2224/86121		3
H01L2224/86122	12	by detecting inherent features of, or outside, the semiconductor or solid-state body	CPCONLY	H01L2224/86122		
H01L2224/8613	12	using marks formed on the semiconductor or solid-state body	CPCONLY	H01L2224/8613		
H01L2224/86132	12	using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"	CPCONLY	H01L2224/86132		
H01L2224/86136	11	involving guiding structures, e.g. spacers or supporting members	CPCONLY	H01L2224/86136		
H01L2224/86138	12	the guiding structures being at least partially left in the finished device	CPCONLY	H01L2224/86138		1
H01L2224/86143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/86143		1
H01L2224/86148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/86148		
H01L2224/86149	12	being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table	CPCONLY	H01L2224/86149		
H01L2224/8615	13	Rotational movements	CPCONLY	H01L2224/8615		
H01L2224/8616	13	Translational movements	CPCONLY	H01L2224/8616		
H01L2224/86169	12	being the upper part of the bonding apparatus, e.g. nozzle	CPCONLY	H01L2224/86169		
H01L2224/8617	13	Rotational movement	CPCONLY	H01L2224/8617		
H01L2224/8618	13	Translational movements	CPCONLY	H01L2224/8618		
H01L2224/86181	14	connecting first on the semiconductor or solid-state body, i.e. on-chip,	CPCONLY	H01L2224/86181		
H01L2224/86186	14	connecting first outside the semiconductor or solid-state body, i.e. off-chip	CPCONLY	H01L2224/86186		
H01L2224/86191	14	connecting first both on and outside the semiconductor or solid-state body	CPCONLY	H01L2224/86191		
H01L2224/862	10	Applying energy for connecting	CPCONLY	H01L2224/862		
H01L2224/86201	11	Compression bonding	CPCONLY	H01L2224/86201		2
H01L2224/86203	12	Thermo-compression bonding	CPCONLY	H01L2224/86203		22
H01L2224/86205	12	Ultrasonic bonding	CPCONLY	H01L2224/86205		5
H01L2224/86207	13	Thermosonic bonding	CPCONLY	H01L2224/86207		1
H01L2224/8621	11	with energy being in the form of electromagnetic radiation	CPCONLY	H01L2224/8621		2
H01L2224/86212	12	Induction heating, i.e. eddy currents	CPCONLY	H01L2224/86212		
H01L2224/86214	12	using a laser	CPCONLY	H01L2224/86214		8
H01L2224/8623	12	Polychromatic or infrared lamp heating	CPCONLY	H01L2224/8623		
H01L2224/86232	12	using an autocatalytic reaction, e.g. exothermic brazing	CPCONLY	H01L2224/86232		
H01L2224/86234	12	using means for applying energy being within the device, e.g. integrated heater	CPCONLY	H01L2224/86234		
H01L2224/86236	12	using electro-static corona discharge	CPCONLY	H01L2224/86236		
H01L2224/86237	12	using electron beam	CPCONLY	H01L2224/86237		
H01L2224/86238	12	using electric resistance welding, i.e. ohmic heating	CPCONLY	H01L2224/86238		
H01L2224/8634	10	Bonding interfaces of the connector	CPCONLY	H01L2224/8634		
H01L2224/86345	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/86345		3
H01L2224/86355	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/86355		1
H01L2224/86359	11	Material	CPCONLY	H01L2224/86359		
H01L2224/8636	10	Bonding interfaces of the semiconductor or solid state body	CPCONLY	H01L2224/8636		
H01L2224/86365	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/86365		1
H01L2224/86375	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/86375		
H01L2224/86379	11	Material	CPCONLY	H01L2224/86379		
H01L2224/8638	10	Bonding interfaces outside the semiconductor or solid-state body	CPCONLY	H01L2224/8638		
H01L2224/86385	11	Shape, e.g. interlocking features	CPCONLY	H01L2224/86385		1
H01L2224/86395	11	having an external coating, e.g. protective bond-through coating	CPCONLY	H01L2224/86395		
H01L2224/86399	11	Material	CPCONLY	H01L2224/86399		3
H01L2224/868	10	Bonding techniques	CPCONLY	H01L2224/868		
H01L2224/86801	11	Soldering or alloying	CPCONLY	H01L2224/86801		6
H01L2224/86805	12	involving forming a eutectic alloy at the bonding interface	CPCONLY	H01L2224/86805		
H01L2224/8681	12	involving forming an intermetallic compound at the bonding interface	CPCONLY	H01L2224/8681		2
H01L2224/86815	12	Reflow soldering	CPCONLY	H01L2224/86815		5
H01L2224/8682	12	Diffusion bonding	CPCONLY	H01L2224/8682		3
H01L2224/86825	13	Solid-liquid interdiffusion	CPCONLY	H01L2224/86825		
H01L2224/8683	13	Solid-solid interdiffusion	CPCONLY	H01L2224/8683		1
H01L2224/8684	11	Sintering	CPCONLY	H01L2224/8684		6
H01L2224/8685	11	using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester	CPCONLY	H01L2224/8685		8
H01L2224/86855	12	Hardening the adhesive by curing, i.e. thermosetting	CPCONLY	H01L2224/86855		
H01L2224/86856	13	Pre-cured adhesive, i.e. B-stage adhesive	CPCONLY	H01L2224/86856		
H01L2224/86859	13	Localised curing of parts of the connector	CPCONLY	H01L2224/86859		
H01L2224/86862	13	Heat curing	CPCONLY	H01L2224/86862		2
H01L2224/86865	13	Microwave curing	CPCONLY	H01L2224/86865		
H01L2224/86868	13	Infrared [IR] curing	CPCONLY	H01L2224/86868		3
H01L2224/86871	13	Visible light curing	CPCONLY	H01L2224/86871		
H01L2224/86874	13	Ultraviolet [UV] curing	CPCONLY	H01L2224/86874		4
H01L2224/86877	13	Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes	CPCONLY	H01L2224/86877		
H01L2224/8688	12	Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives	CPCONLY	H01L2224/8688		
H01L2224/86885	12	Combinations of two or more hardening methods provided for in at least two different groups selected from H01L2224/86855&#160;-&#160;H01L2224/8688, e.g. hybrid thermoplastic-thermosetting adhesives	CPCONLY	H01L2224/86885		
H01L2224/8689	11	using an inorganic non metallic glass type adhesive, e.g. solder glass	CPCONLY	H01L2224/8689		1
H01L2224/86893	11	Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond	CPCONLY	H01L2224/86893		
H01L2224/86895	11	Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces	CPCONLY	H01L2224/86895		
H01L2224/86896	12	between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding	CPCONLY	H01L2224/86896		1
H01L2224/86897	12	between electrically insulating surfaces, e.g. oxide or nitride layers	CPCONLY	H01L2224/86897		1
H01L2224/86899	11	Combinations of bonding methods provided for in at least two different groups from H01L2224/868&#160;-&#160;H01L2224/86897	CPCONLY	H01L2224/86899		1
H01L2224/869	10	involving monitoring, e.g. feedback loop	CPCONLY	H01L2224/869		
H01L2224/86909	10	Post-treatment of the connector or the bonding area	CPCONLY	H01L2224/86909		
H01L2224/8691	11	Cleaning, e.g. oxide removal step, desmearing	CPCONLY	H01L2224/8691		
H01L2224/8693	11	Reshaping	CPCONLY	H01L2224/8693		
H01L2224/86931	12	by chemical means, e.g. etching, anodisation	CPCONLY	H01L2224/86931		
H01L2224/86935	12	by heating means	CPCONLY	H01L2224/86935		
H01L2224/86939	13	using a laser	CPCONLY	H01L2224/86939		1
H01L2224/86945	13	using a corona discharge, e.g. electronic flame off [EFO]	CPCONLY	H01L2224/86945		
H01L2224/86947	12	by mechanical means, e.g. severing, pressing, stamping	CPCONLY	H01L2224/86947		1
H01L2224/86948	11	Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling	CPCONLY	H01L2224/86948		1
H01L2224/86951	11	Forming additional members	CPCONLY	H01L2224/86951		4
H01L2224/86986	10	Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence	CPCONLY	H01L2224/86986		1
H01L2224/89	9	using at least one connector not provided for in any of the groups H01L2224/81&#160;-&#160;H01L2224/86	CPCONLY	H01L2224/89		41
H01L2224/90	8	Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips	CPCONLY	H01L2224/90		145
H01L2224/91	8	Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80&#160;-&#160;H01L2224/90	CPCONLY	H01L2224/91		17
H01L2224/92	9	Specific sequence of method steps	CPCONLY	H01L2224/92		988
H01L2224/9201	10	Forming connectors during the connecting process, e.g. in-situ formation of bumps	CPCONLY	H01L2224/9201		44
H01L2224/9202	10	Forming additional connectors after the connecting process	CPCONLY	H01L2224/9202		733
H01L2224/9205	10	Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process	CPCONLY	H01L2224/9205		97
H01L2224/921	10	Connecting a surface with connectors of different types	CPCONLY	H01L2224/921		9
H01L2224/9211	11	Parallel connecting processes	CPCONLY	H01L2224/9211		684
H01L2224/9212	11	Sequential connecting processes	CPCONLY	H01L2224/9212		200
H01L2224/92122	12	the first connecting process involving a bump connector	CPCONLY	H01L2224/92122		12
H01L2224/92124	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92124		86
H01L2224/92125	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92125		3452
H01L2224/92127	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92127		49
H01L2224/92132	12	the first connecting process involving a build-up interconnect	CPCONLY	H01L2224/92132		3
H01L2224/92133	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92133		26
H01L2224/92135	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92135		20
H01L2224/92136	13	the second connecting process involving a strap connector	CPCONLY	H01L2224/92136		1
H01L2224/92137	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92137		13
H01L2224/92138	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92138		
H01L2224/92142	12	the first connecting process involving a layer connector	CPCONLY	H01L2224/92142		26
H01L2224/92143	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92143		84
H01L2224/92144	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92144		697
H01L2224/92147	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92147		395
H01L2224/92148	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92148		4
H01L2224/92152	12	the first connecting process involving a strap connector	CPCONLY	H01L2224/92152		2
H01L2224/92153	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92153		1
H01L2224/92155	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92155		3
H01L2224/92157	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92157		31
H01L2224/92158	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92158		
H01L2224/92162	12	the first connecting process involving a wire connector	CPCONLY	H01L2224/92162		4
H01L2224/92163	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92163		33
H01L2224/92164	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92164		27
H01L2224/92165	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92165		55
H01L2224/92166	13	the second connecting process involving a strap connector	CPCONLY	H01L2224/92166		16
H01L2224/92168	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92168		
H01L2224/92172	12	the first connecting process involving a TAB connector	CPCONLY	H01L2224/92172		
H01L2224/92173	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92173		
H01L2224/92174	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92174		1
H01L2224/92175	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92175		2
H01L2224/92176	13	the second connecting process involving a strap connector	CPCONLY	H01L2224/92176		
H01L2224/92177	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92177		
H01L2224/922	10	Connecting different surfaces of the semiconductor or solid-state body with connectors of different types	CPCONLY	H01L2224/922		10
H01L2224/9221	11	Parallel connecting processes	CPCONLY	H01L2224/9221		108
H01L2224/9222	11	Sequential connecting processes	CPCONLY	H01L2224/9222		406
H01L2224/92222	12	the first connecting process involving a bump connector	CPCONLY	H01L2224/92222		40
H01L2224/92224	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92224		225
H01L2224/92225	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92225		478
H01L2224/92226	13	the second connecting process involving a strap connector	CPCONLY	H01L2224/92226		11
H01L2224/92227	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92227		55
H01L2224/92228	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92228		
H01L2224/92242	12	the first connecting process involving a layer connector	CPCONLY	H01L2224/92242		244
H01L2224/92244	13	the second connecting process involving a build-up interconnect	CPCONLY	H01L2224/92244		2756
H01L2224/92246	13	the second connecting process involving a strap connector	CPCONLY	H01L2224/92246		190
H01L2224/92247	13	the second connecting process involving a wire connector	CPCONLY	H01L2224/92247		5714
H01L2224/92248	13	the second connecting process involving a TAB connector	CPCONLY	H01L2224/92248		11
H01L2224/92252	12	the first connecting process involving a strap connector	CPCONLY	H01L2224/92252		9
H01L2224/92253	13	the second connecting process involving a bump connector	CPCONLY	H01L2224/92253		
H01L2224/92255	13	the second connecting process involving a layer connector	CPCONLY	H01L2224/92255		10
H01L2224/93	8	Batch processes	CPCONLY	H01L2224/93		70
H01L2224/94	9	at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices	CPCONLY	H01L2224/94		3745
H01L2224/95	9	at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips	CPCONLY	H01L2224/95		897
H01L2224/95001	10	involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate	CPCONLY	H01L2224/95001		681
H01L2224/95053	10	Bonding environment	CPCONLY	H01L2224/95053		7
H01L2224/95085	11	being a liquid, e.g. for fluidic self-assembly	CPCONLY	H01L2224/95085		378
H01L2224/95091	11	Under pressure	CPCONLY	H01L2224/95091		24
H01L2224/95092	12	Atmospheric pressure, e.g. dry self-assembly	CPCONLY	H01L2224/95092		29
H01L2224/95093	12	Transient conditions, e.g. assisted by a gas flow or a liquid flow	CPCONLY	H01L2224/95093		9
H01L2224/951	10	Supplying the plurality of semiconductor or solid-state bodies	CPCONLY	H01L2224/951		58
H01L2224/95101	11	in a liquid medium	CPCONLY	H01L2224/95101		282
H01L2224/95102	12	being a colloidal droplet	CPCONLY	H01L2224/95102		34
H01L2224/9511	11	using a rack or rail	CPCONLY	H01L2224/9511		13
H01L2224/95115	11	using a roll-to-roll transfer technique	CPCONLY	H01L2224/95115		82
H01L2224/9512	10	Aligning the plurality of semiconductor or solid-state bodies	CPCONLY	H01L2224/9512		30
H01L2224/95121	11	Active alignment, i.e. by apparatus steering	CPCONLY	H01L2224/95121		28
H01L2224/95122	12	by applying vibration	CPCONLY	H01L2224/95122		61
H01L2224/95123	12	by applying a pressurised fluid flow, e.g. liquid or gas flow	CPCONLY	H01L2224/95123		22
H01L2224/95133	12	by applying an electromagnetic field	CPCONLY	H01L2224/95133		122
H01L2224/95134	13	Electrowetting, i.e. by changing the surface energy of a droplet	CPCONLY	H01L2224/95134		4
H01L2224/95136	11	involving guiding structures, e.g. shape matching, spacers or supporting members	CPCONLY	H01L2224/95136		375
H01L2224/95143	11	Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium	CPCONLY	H01L2224/95143		23
H01L2224/95144	12	Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body	CPCONLY	H01L2224/95144		123
H01L2224/95145	12	Electrostatic alignment, i.e. polarity alignment with Coulomb charges	CPCONLY	H01L2224/95145		134
H01L2224/95146	12	by surface tension	CPCONLY	H01L2224/95146		112
H01L2224/95147	12	by molecular lock-key, e.g. by DNA	CPCONLY	H01L2224/95147		13
H01L2224/95148	11	involving movement of a part of the bonding apparatus	CPCONLY	H01L2224/95148		16
H01L2224/96	10	the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting	CPCONLY	H01L2224/96		1709
H01L2224/97	10	the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting	CPCONLY	H01L2224/97		10957
H01L2224/98	8	Methods for disconnecting semiconductor or solid-state bodies	CPCONLY	H01L2224/98		126
H01L2225/00	7	Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups	CPCONLY	H01L2225/00		5
H01L2225/03	8	All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes	CPCONLY	H01L2225/03		2
H01L2225/04	9	the devices not having separate containers	CPCONLY	H01L2225/04		14
H01L2225/065	10	All the devices being of a type provided for in the same main group of the same subclass of class H10	CPCONLY	H01L2225/065		30
H01L2225/06503	11	Stacked arrangements of devices	CPCONLY	H01L2225/06503		65
H01L2225/06506	12	Wire or wire-like electrical connections between devices	CPCONLY	H01L2225/06506		1782
H01L2225/0651	12	Wire or wire-like electrical connections from device to substrate	CPCONLY	H01L2225/0651		4827
H01L2225/06513	12	Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps	CPCONLY	H01L2225/06513		6619
H01L2225/06517	12	Bump or bump-like direct electrical connections from device to substrate	CPCONLY	H01L2225/06517		5418
H01L2225/0652	12	Bump or bump-like direct electrical connections from substrate to substrate	CPCONLY	H01L2225/0652		650
H01L2225/06524	12	Electrical connections formed on device or on substrate, e.g. a deposited or grown layer	CPCONLY	H01L2225/06524		1878
H01L2225/06527	12	Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout	CPCONLY	H01L2225/06527		2296
H01L2225/06531	13	Non-galvanic coupling, e.g. capacitive coupling	CPCONLY	H01L2225/06531		226
H01L2225/06534	14	Optical coupling	CPCONLY	H01L2225/06534		111
H01L2225/06537	13	Electromagnetic shielding	CPCONLY	H01L2225/06537		315
H01L2225/06541	12	Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]	CPCONLY	H01L2225/06541		6611
H01L2225/06544	13	Design considerations for via connections, e.g. geometry or layout	CPCONLY	H01L2225/06544		869
H01L2225/06548	12	Conductive via connections through the substrate, container, or encapsulation	CPCONLY	H01L2225/06548		1625
H01L2225/06551	12	Conductive connections on the side of the device	CPCONLY	H01L2225/06551		707
H01L2225/06555	12	Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking	CPCONLY	H01L2225/06555		1379
H01L2225/06558	13	the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement	CPCONLY	H01L2225/06558		625
H01L2225/06562	13	at least one device in the stack being rotated or offset	CPCONLY	H01L2225/06562		2909
H01L2225/06565	13	the devices having the same size and there being no auxiliary carrier between the devices	CPCONLY	H01L2225/06565		1859
H01L2225/06568	13	the devices decreasing in size, e.g. pyramidical stack	CPCONLY	H01L2225/06568		1812
H01L2225/06572	12	Auxiliary carrier between devices, the carrier having an electrical connection structure	CPCONLY	H01L2225/06572		1726
H01L2225/06575	12	Auxiliary carrier between devices, the carrier having no electrical connection structure	CPCONLY	H01L2225/06575		791
H01L2225/06579	12	TAB carriers; beam leads	CPCONLY	H01L2225/06579		375
H01L2225/06582	12	Housing for the assembly, e.g. chip scale package [CSP]	CPCONLY	H01L2225/06582		1058
H01L2225/06586	13	Housing with external bump or bump-like connectors	CPCONLY	H01L2225/06586		1645
H01L2225/06589	12	Thermal management, e.g. cooling	CPCONLY	H01L2225/06589		2208
H01L2225/06593	12	Mounting aids permanently on device; arrangements for alignment	CPCONLY	H01L2225/06593		612
H01L2225/06596	12	Structural arrangements for testing	CPCONLY	H01L2225/06596		594
H01L2225/10	9	the devices having separate containers	CPCONLY	H01L2225/10		5
H01L2225/1005	10	the devices being integrated devices of class H10	CPCONLY	H01L2225/1005		257
H01L2225/1011	11	the containers being in a stacked arrangement	CPCONLY	H01L2225/1011		78
H01L2225/1017	12	the lowermost container comprising a device support	CPCONLY	H01L2225/1017		56
H01L2225/1023	13	the support being an insulating substrate	CPCONLY	H01L2225/1023		2708
H01L2225/1029	13	the support being a lead frame	CPCONLY	H01L2225/1029		571
H01L2225/1035	13	the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]	CPCONLY	H01L2225/1035		1953
H01L2225/1041	12	Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer	CPCONLY	H01L2225/1041		1764
H01L2225/1047	12	Details of electrical connections between containers	CPCONLY	H01L2225/1047		123
H01L2225/1052	13	Wire or wire-like electrical connections	CPCONLY	H01L2225/1052		252
H01L2225/1058	13	Bump or bump-like electrical connections, e.g. balls, pillars, posts	CPCONLY	H01L2225/1058		4455
H01L2225/1064	13	Electrical connections provided on a side surface of one or more of the containers	CPCONLY	H01L2225/1064		285
H01L2225/107	13	Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB	CPCONLY	H01L2225/107		841
H01L2225/1076	12	Shape of the containers	CPCONLY	H01L2225/1076		126
H01L2225/1082	13	for improving alignment between containers, e.g. interlocking features	CPCONLY	H01L2225/1082		160
H01L2225/1088	13	Arrangements to limit the height of the assembly	CPCONLY	H01L2225/1088		360
H01L2225/1094	12	Thermal management, e.g. cooling	CPCONLY	H01L2225/1094		874
H01L2924/00	7	Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00	CPCONLY	H01L2924/00		183296
H01L2924/0001	8	Technical content checked by a classifier<br><br><u>NOTE</u><br><br> Codes H01L2924/0001&#160;-&#160;H01L2924/0002 are used to describe the status of reclassification; they do not relate to technical features as such 	CPCONLY	H01L2924/0001		3187
H01L2924/00011	9	Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group	CPCONLY	H01L2924/00011		5024
H01L2924/00012	9	Relevant to the scope of the group, the symbol of which is combined with the symbol of this group	CPCONLY	H01L2924/00012		68891
H01L2924/00013	9	Fully indexed content	CPCONLY	H01L2924/00013		3740
H01L2924/00014	9	the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details	CPCONLY	H01L2924/00014		130771
H01L2924/00015	9	the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art	CPCONLY	H01L2924/00015		3141
H01L2924/0002	9	Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00	CPCONLY	H01L2924/0002		84036
H01L2924/01	8	Chemical elements	CPCONLY	H01L2924/01		1
H01L2924/01001	9	Hydrogen [H]	CPCONLY	H01L2924/01001		177
H01L2924/01002	9	Helium [He]	CPCONLY	H01L2924/01002		148
H01L2924/01003	9	Lithium [Li]	CPCONLY	H01L2924/01003		88
H01L2924/01004	9	Beryllium [Be]	CPCONLY	H01L2924/01004		9769
H01L2924/01005	9	Boron [B]	CPCONLY	H01L2924/01005		21327
H01L2924/01006	9	Carbon [C]	CPCONLY	H01L2924/01006		23146
H01L2924/01007	9	Nitrogen [N]	CPCONLY	H01L2924/01007		1040
H01L2924/01008	9	Oxygen [O]	CPCONLY	H01L2924/01008		141
H01L2924/01009	9	Fluorine [F]	CPCONLY	H01L2924/01009		233
H01L2924/0101	9	Neon [Ne]	CPCONLY	H01L2924/0101		271
H01L2924/01011	9	Sodium [Na]	CPCONLY	H01L2924/01011		970
H01L2924/01012	9	Magnesium [Mg]	CPCONLY	H01L2924/01012		2631
H01L2924/01013	9	Aluminum [Al]	CPCONLY	H01L2924/01013		20921
H01L2924/01014	9	Silicon [Si]	CPCONLY	H01L2924/01014		9761
H01L2924/01015	9	Phosphorus [P]	CPCONLY	H01L2924/01015		7913
H01L2924/01016	9	Sulfur [S]	CPCONLY	H01L2924/01016		436
H01L2924/01017	9	Chlorine [Cl]	CPCONLY	H01L2924/01017		41
H01L2924/01018	9	Argon [Ar]	CPCONLY	H01L2924/01018		1505
H01L2924/01019	9	Potassium [K]	CPCONLY	H01L2924/01019		8504
H01L2924/0102	9	Calcium [Ca]	CPCONLY	H01L2924/0102		3054
H01L2924/01021	9	Scandium [Sc]	CPCONLY	H01L2924/01021		663
H01L2924/01022	9	Titanium [Ti]	CPCONLY	H01L2924/01022		4865
H01L2924/01023	9	Vanadium [V]	CPCONLY	H01L2924/01023		5595
H01L2924/01024	9	Chromium [Cr]	CPCONLY	H01L2924/01024		4450
H01L2924/01025	9	Manganese [Mn]	CPCONLY	H01L2924/01025		1421
H01L2924/01026	9	Iron [Fe]	CPCONLY	H01L2924/01026		755
H01L2924/01027	9	Cobalt [Co]	CPCONLY	H01L2924/01027		4934
H01L2924/01028	9	Nickel [Ni]	CPCONLY	H01L2924/01028		5950
H01L2924/01029	9	Copper [Cu]	CPCONLY	H01L2924/01029		25267
H01L2924/0103	9	Zinc [Zn]	CPCONLY	H01L2924/0103		3036
H01L2924/01031	9	Gallium [Ga]	CPCONLY	H01L2924/01031		896
H01L2924/01032	9	Germanium [Ge]	CPCONLY	H01L2924/01032		2883
H01L2924/01033	9	Arsenic [As]	CPCONLY	H01L2924/01033		26089
H01L2924/01034	9	Selenium [Se]	CPCONLY	H01L2924/01034		125
H01L2924/01035	9	Bromine [Br]	CPCONLY	H01L2924/01035		8
H01L2924/01036	9	Krypton [Kr]	CPCONLY	H01L2924/01036		3
H01L2924/01037	9	Rubidium [Rb]	CPCONLY	H01L2924/01037		265
H01L2924/01038	9	Strontium [Sr]	CPCONLY	H01L2924/01038		530
H01L2924/01039	9	Yttrium [Y]	CPCONLY	H01L2924/01039		3807
H01L2924/0104	9	Zirconium [Zr]	CPCONLY	H01L2924/0104		1134
H01L2924/01041	9	Niobium [Nb]	CPCONLY	H01L2924/01041		626
H01L2924/01042	9	Molybdenum [Mo]	CPCONLY	H01L2924/01042		3199
H01L2924/01043	9	Technetium [Tc]	CPCONLY	H01L2924/01043		297
H01L2924/01044	9	Ruthenium [Ru]	CPCONLY	H01L2924/01044		631
H01L2924/01045	9	Rhodium [Rh]	CPCONLY	H01L2924/01045		1099
H01L2924/01046	9	Palladium [Pd]	CPCONLY	H01L2924/01046		6604
H01L2924/01047	9	Silver [Ag]	CPCONLY	H01L2924/01047		14694
H01L2924/01048	9	Cadmium [Cd]	CPCONLY	H01L2924/01048		159
H01L2924/01049	9	Indium [In]	CPCONLY	H01L2924/01049		4363
H01L2924/0105	9	Tin [Sn]	CPCONLY	H01L2924/0105		8398
H01L2924/01051	9	Antimony [Sb]	CPCONLY	H01L2924/01051		2120
H01L2924/01052	9	Tellurium [Te]	CPCONLY	H01L2924/01052		692
H01L2924/01053	9	Iodine [I]	CPCONLY	H01L2924/01053		4
H01L2924/01054	9	Xenon [Xe]	CPCONLY	H01L2924/01054		125
H01L2924/01055	9	Cesium [Cs]	CPCONLY	H01L2924/01055		524
H01L2924/01056	9	Barium [Ba]	CPCONLY	H01L2924/01056		717
H01L2924/01057	9	Lanthanum [La]	CPCONLY	H01L2924/01057		2649
H01L2924/01058	9	Cerium [Ce]	CPCONLY	H01L2924/01058		2189
H01L2924/01059	9	Praseodymium [Pr]	CPCONLY	H01L2924/01059		392
H01L2924/0106	9	Neodymium [Nd]	CPCONLY	H01L2924/0106		457
H01L2924/01061	9	Promethium [Pm]	CPCONLY	H01L2924/01061		618
H01L2924/01062	9	Samarium [Sm]	CPCONLY	H01L2924/01062		68
H01L2924/01063	9	Europium [Eu]	CPCONLY	H01L2924/01063		357
H01L2924/01064	9	Gadolinium [Gd]	CPCONLY	H01L2924/01064		135
H01L2924/01065	9	Terbium [Tb]	CPCONLY	H01L2924/01065		182
H01L2924/01066	9	Dysprosium [Dy]	CPCONLY	H01L2924/01066		332
H01L2924/01067	9	Holmium [Ho]	CPCONLY	H01L2924/01067		536
H01L2924/01068	9	Erbium [Er]	CPCONLY	H01L2924/01068		2665
H01L2924/01069	9	Thulium [Tm]	CPCONLY	H01L2924/01069		19
H01L2924/0107	9	Ytterbium [Yb]	CPCONLY	H01L2924/0107		122
H01L2924/01071	9	Lutetium [Lu]	CPCONLY	H01L2924/01071		26
H01L2924/01072	9	Hafnium [Hf]	CPCONLY	H01L2924/01072		1116
H01L2924/01073	9	Tantalum [Ta]	CPCONLY	H01L2924/01073		2389
H01L2924/01074	9	Tungsten [W]	CPCONLY	H01L2924/01074		10005
H01L2924/01075	9	Rhenium [Re]	CPCONLY	H01L2924/01075		3972
H01L2924/01076	9	Osmium [Os]	CPCONLY	H01L2924/01076		854
H01L2924/01077	9	Iridium [Ir]	CPCONLY	H01L2924/01077		1935
H01L2924/01078	9	Platinum [Pt]	CPCONLY	H01L2924/01078		19010
H01L2924/01079	9	Gold [Au]	CPCONLY	H01L2924/01079		29646
H01L2924/0108	9	Mercury [Hg]	CPCONLY	H01L2924/0108		24
H01L2924/01081	9	Thallium [Tl]	CPCONLY	H01L2924/01081		40
H01L2924/01082	9	Lead [Pb]	CPCONLY	H01L2924/01082		24516
H01L2924/01083	9	Bismuth [Bi]	CPCONLY	H01L2924/01083		1278
H01L2924/01084	9	Polonium [Po]	CPCONLY	H01L2924/01084		314
H01L2924/01085	9	Astatine [At]	CPCONLY	H01L2924/01085		2
H01L2924/01086	9	Radon [Rn]	CPCONLY	H01L2924/01086		4
H01L2924/01087	9	Francium [Fr]	CPCONLY	H01L2924/01087		1698
H01L2924/01088	9	Radium [Ra]	CPCONLY	H01L2924/01088		330
H01L2924/01089	9	Actinium [Ac]	CPCONLY	H01L2924/01089		
H01L2924/0109	9	Thorium [Th]	CPCONLY	H01L2924/0109		19
H01L2924/01091	9	Protactinium [Pa]	CPCONLY	H01L2924/01091		
H01L2924/01092	9	Uranium [U]	CPCONLY	H01L2924/01092		68
H01L2924/01093	9	Neptunium [Np]	CPCONLY	H01L2924/01093		66
H01L2924/01094	9	Plutonium [Pu]	CPCONLY	H01L2924/01094		140
H01L2924/011	8	Groups of the periodic table	CPCONLY	H01L2924/011		
H01L2924/01101	9	Alkali metals	CPCONLY	H01L2924/01101		
H01L2924/01102	9	Alkali earth metals	CPCONLY	H01L2924/01102		3
H01L2924/01103	9	Transition metals	CPCONLY	H01L2924/01103		16
H01L2924/01104	9	Refractory metals	CPCONLY	H01L2924/01104		28
H01L2924/01105	9	Rare earth metals	CPCONLY	H01L2924/01105		269
H01L2924/01106	10	Lanthanides, i.e. Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu	CPCONLY	H01L2924/01106		6
H01L2924/01107	10	Actinides, i.e. Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr	CPCONLY	H01L2924/01107		2
H01L2924/01108	9	Noble metals	CPCONLY	H01L2924/01108		13
H01L2924/01109	9	Metalloids or Semi-metals	CPCONLY	H01L2924/01109		5
H01L2924/0111	9	Chalcogens	CPCONLY	H01L2924/0111		5
H01L2924/01111	9	Halogens	CPCONLY	H01L2924/01111		15
H01L2924/01112	9	Noble gases	CPCONLY	H01L2924/01112		1
H01L2924/012	8	Semiconductor purity grades	CPCONLY	H01L2924/012		11
H01L2924/01201	9	1N purity grades, i.e. 90%	CPCONLY	H01L2924/01201		137
H01L2924/01202	9	2N purity grades, i.e. 99%	CPCONLY	H01L2924/01202		191
H01L2924/01203	9	3N purity grades, i.e. 99.9%	CPCONLY	H01L2924/01203		266
H01L2924/01204	9	4N purity grades, i.e. 99.99%	CPCONLY	H01L2924/01204		616
H01L2924/01205	9	5N purity grades, i.e. 99.999%	CPCONLY	H01L2924/01205		277
H01L2924/01206	9	6N purity grades, i.e. 99.9999%	CPCONLY	H01L2924/01206		92
H01L2924/01207	9	7N purity grades, i.e. 99.99999%	CPCONLY	H01L2924/01207		4
H01L2924/01208	9	8N purity grades, i.e. 99.999999%	CPCONLY	H01L2924/01208		3
H01L2924/013	8	Alloys	CPCONLY	H01L2924/013		3241
H01L2924/0132	9	Binary Alloys	CPCONLY	H01L2924/0132		2448
H01L2924/01321	10	Isomorphous Alloys	CPCONLY	H01L2924/01321		2
H01L2924/01322	10	Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases	CPCONLY	H01L2924/01322		8335
H01L2924/01323	11	Hypoeutectic alloys i.e. with compositions lying to the left of the eutectic point	CPCONLY	H01L2924/01323		1
H01L2924/01324	11	Hypereutectic alloys i.e. with compositions lying to the right of the eutectic point	CPCONLY	H01L2924/01324		1
H01L2924/01325	10	Peritectic Alloys, i.e. obtained by a liquid and a solid transforming into a new and different solid phase	CPCONLY	H01L2924/01325		
H01L2924/01326	10	Monotectics, i.e. obtained by a liquid transforming into a solid and a new and different liquid phase	CPCONLY	H01L2924/01326		
H01L2924/01327	10	Intermediate phases, i.e. intermetallics compounds	CPCONLY	H01L2924/01327		2436
H01L2924/0133	9	Ternary Alloys	CPCONLY	H01L2924/0133		785
H01L2924/0134	9	Quaternary Alloys	CPCONLY	H01L2924/0134		134
H01L2924/0135	9	Quinary Alloys	CPCONLY	H01L2924/0135		18
H01L2924/014	9	Solder alloys	CPCONLY	H01L2924/014		26549
H01L2924/01402	9	Invar, i.e. single-phase alloy of around 36% nickel and 64% iron	CPCONLY	H01L2924/01402		12
H01L2924/01403	9	Kovar, i.e. FeNiCo alloys	CPCONLY	H01L2924/01403		7
H01L2924/01404	9	Alloy 42, i.e. FeNi42	CPCONLY	H01L2924/01404		13
H01L2924/01405	9	Inovco, i.e. Fe-33Ni-4.5Co	CPCONLY	H01L2924/01405		
H01L2924/042	8	Borides composed of metals from groups of the periodic table	CPCONLY	H01L2924/042		1
H01L2924/0421	9	1st Group	CPCONLY	H01L2924/0421		
H01L2924/0422	9	2nd Group	CPCONLY	H01L2924/0422		
H01L2924/0423	9	3rd Group	CPCONLY	H01L2924/0423		
H01L2924/0424	9	4th Group	CPCONLY	H01L2924/0424		2
H01L2924/0425	9	5th Group	CPCONLY	H01L2924/0425		1
H01L2924/0426	9	6th Group	CPCONLY	H01L2924/0426		1
H01L2924/0427	9	7th Group	CPCONLY	H01L2924/0427		
H01L2924/0428	9	8th Group	CPCONLY	H01L2924/0428		2
H01L2924/0429	9	9th Group	CPCONLY	H01L2924/0429		2
H01L2924/044	9	10th Group	CPCONLY	H01L2924/044		9
H01L2924/0441	9	11th Group	CPCONLY	H01L2924/0441		1
H01L2924/0442	9	12th Group	CPCONLY	H01L2924/0442		
H01L2924/0443	9	13th Group	CPCONLY	H01L2924/0443		3
H01L2924/0444	9	14th Group	CPCONLY	H01L2924/0444		6
H01L2924/0445	9	Lanthanides	CPCONLY	H01L2924/0445		
H01L2924/0446	9	Actinides	CPCONLY	H01L2924/0446		
H01L2924/0449	9	being a combination of two or more materials provided in the groups H01L2924/0421&#160;-&#160;H01L2924/0446	CPCONLY	H01L2924/0449		1
H01L2924/04491	9	having a monocrystalline microstructure	CPCONLY	H01L2924/04491		
H01L2924/04492	9	having a polycrystalline microstructure	CPCONLY	H01L2924/04492		
H01L2924/04494	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/04494		
H01L2924/045	8	Carbides composed of metals from groups of the periodic table	CPCONLY	H01L2924/045		18
H01L2924/0451	9	1st Group	CPCONLY	H01L2924/0451		1
H01L2924/0452	9	2nd Group	CPCONLY	H01L2924/0452		6
H01L2924/0453	9	3rd Group	CPCONLY	H01L2924/0453		
H01L2924/0454	9	4th Group	CPCONLY	H01L2924/0454		3
H01L2924/04541	10	TiC	CPCONLY	H01L2924/04541		29
H01L2924/0455	9	5th Group	CPCONLY	H01L2924/0455		23
H01L2924/0456	9	6th Group	CPCONLY	H01L2924/0456		6
H01L2924/04563	10	WC	CPCONLY	H01L2924/04563		21
H01L2924/0457	9	7th Group	CPCONLY	H01L2924/0457		
H01L2924/0458	9	8th Group	CPCONLY	H01L2924/0458		2
H01L2924/0459	9	9th Group	CPCONLY	H01L2924/0459		1
H01L2924/046	9	10th Group	CPCONLY	H01L2924/046		3
H01L2924/0461	9	11th Group	CPCONLY	H01L2924/0461		4
H01L2924/0462	9	12th Group	CPCONLY	H01L2924/0462		1
H01L2924/0463	9	13th Group	CPCONLY	H01L2924/0463		14
H01L2924/0464	9	14th Group	CPCONLY	H01L2924/0464		12
H01L2924/04642	10	SiC	CPCONLY	H01L2924/04642		219
H01L2924/0465	9	Lanthanides	CPCONLY	H01L2924/0465		1
H01L2924/0466	9	Actinides	CPCONLY	H01L2924/0466		
H01L2924/0469	9	being a combination of two or more materials provided in the groups H01L2924/0451&#160;-&#160;H01L2924/0466	CPCONLY	H01L2924/0469		12
H01L2924/04691	9	having a monocrystalline microstructure	CPCONLY	H01L2924/04691		
H01L2924/04692	9	having a polycrystalline microstructure	CPCONLY	H01L2924/04692		
H01L2924/04694	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/04694		
H01L2924/047	8	Silicides composed of metals from groups of the periodic table	CPCONLY	H01L2924/047		42
H01L2924/0471	9	1st Group	CPCONLY	H01L2924/0471		2
H01L2924/0472	9	2nd Group	CPCONLY	H01L2924/0472		2
H01L2924/0473	9	3rd Group	CPCONLY	H01L2924/0473		
H01L2924/0474	9	4th Group	CPCONLY	H01L2924/0474		26
H01L2924/0475	9	5th Group	CPCONLY	H01L2924/0475		21
H01L2924/0476	9	6th Group	CPCONLY	H01L2924/0476		23
H01L2924/0477	9	7th Group	CPCONLY	H01L2924/0477		1
H01L2924/0478	9	8th Group	CPCONLY	H01L2924/0478		4
H01L2924/0479	9	9th Group	CPCONLY	H01L2924/0479		12
H01L2924/048	9	10th Group	CPCONLY	H01L2924/048		24
H01L2924/0481	9	11th Group	CPCONLY	H01L2924/0481		3
H01L2924/0482	9	12th Group	CPCONLY	H01L2924/0482		
H01L2924/0483	9	13th Group	CPCONLY	H01L2924/0483		9
H01L2924/0484	9	14th Group	CPCONLY	H01L2924/0484		2
H01L2924/0485	9	Lanthanides	CPCONLY	H01L2924/0485		1
H01L2924/0486	9	Actinides	CPCONLY	H01L2924/0486		
H01L2924/0489	9	being a combination of two or more materials provided in the groups H01L2924/0471&#160;-&#160;H01L2924/0486	CPCONLY	H01L2924/0489		3
H01L2924/04891	9	having a monocrystalline microstructure	CPCONLY	H01L2924/04891		
H01L2924/04892	9	having a polycrystalline microstructure	CPCONLY	H01L2924/04892		
H01L2924/04894	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/04894		3
H01L2924/049	8	Nitrides composed of metals from groups of the periodic table	CPCONLY	H01L2924/049		78
H01L2924/0491	9	1st Group	CPCONLY	H01L2924/0491		1
H01L2924/0492	9	2nd Group	CPCONLY	H01L2924/0492		4
H01L2924/0493	9	3rd Group	CPCONLY	H01L2924/0493		7
H01L2924/0494	9	4th Group	CPCONLY	H01L2924/0494		13
H01L2924/04941	10	TiN	CPCONLY	H01L2924/04941		1942
H01L2924/0495	9	5th Group	CPCONLY	H01L2924/0495		14
H01L2924/04953	10	TaN	CPCONLY	H01L2924/04953		1489
H01L2924/0496	9	6th Group	CPCONLY	H01L2924/0496		143
H01L2924/0497	9	7th Group	CPCONLY	H01L2924/0497		5
H01L2924/0498	9	8th Group	CPCONLY	H01L2924/0498		13
H01L2924/0499	9	9th Group	CPCONLY	H01L2924/0499		7
H01L2924/05	9	10th Group	CPCONLY	H01L2924/05		11
H01L2924/0501	9	11th Group	CPCONLY	H01L2924/0501		10
H01L2924/0502	9	12th Group	CPCONLY	H01L2924/0502		2
H01L2924/0503	9	13th Group	CPCONLY	H01L2924/0503		174
H01L2924/05032	10	AlN	CPCONLY	H01L2924/05032		240
H01L2924/0504	9	14th Group	CPCONLY	H01L2924/0504		79
H01L2924/05042	10	Si3N4	CPCONLY	H01L2924/05042		1619
H01L2924/0505	9	Lanthanides	CPCONLY	H01L2924/0505		4
H01L2924/0506	9	Actinides	CPCONLY	H01L2924/0506		
H01L2924/0509	9	being a combination of two or more materials provided in the groups H01L2924/0491&#160;-&#160;H01L2924/0506	CPCONLY	H01L2924/0509		40
H01L2924/05091	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05091		
H01L2924/05092	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05092		1
H01L2924/05094	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05094		1
H01L2924/051	8	Phosphides composed of metals from groups of the periodic table	CPCONLY	H01L2924/051		4
H01L2924/0511	9	1st Group	CPCONLY	H01L2924/0511		
H01L2924/0512	9	2nd Group	CPCONLY	H01L2924/0512		1
H01L2924/0513	9	3rd Group	CPCONLY	H01L2924/0513		1
H01L2924/0514	9	4th Group	CPCONLY	H01L2924/0514		
H01L2924/0515	9	5th Group	CPCONLY	H01L2924/0515		
H01L2924/0516	9	6th Group	CPCONLY	H01L2924/0516		2
H01L2924/0517	9	7th Group	CPCONLY	H01L2924/0517		
H01L2924/0518	9	8th Group	CPCONLY	H01L2924/0518		2
H01L2924/0519	9	9th Group	CPCONLY	H01L2924/0519		5
H01L2924/052	9	10th Group	CPCONLY	H01L2924/052		14
H01L2924/0521	9	11th Group	CPCONLY	H01L2924/0521		2
H01L2924/0522	9	12th Group	CPCONLY	H01L2924/0522		
H01L2924/0523	9	13th Group	CPCONLY	H01L2924/0523		4
H01L2924/0524	9	14th Group	CPCONLY	H01L2924/0524		2
H01L2924/0525	9	Lanthanides	CPCONLY	H01L2924/0525		1
H01L2924/0526	9	Actinides	CPCONLY	H01L2924/0526		
H01L2924/0529	9	being a combination of two or more materials provided in the groups H01L2924/0511&#160;-&#160;H01L2924/0526	CPCONLY	H01L2924/0529		9
H01L2924/05291	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05291		
H01L2924/05292	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05292		
H01L2924/05294	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05294		
H01L2924/053	8	Oxides composed of metals from groups of the periodic table	CPCONLY	H01L2924/053		197
H01L2924/0531	9	1st Group	CPCONLY	H01L2924/0531		11
H01L2924/0532	9	2nd Group	CPCONLY	H01L2924/0532		121
H01L2924/0533	9	3rd Group	CPCONLY	H01L2924/0533		15
H01L2924/0534	9	4th Group	CPCONLY	H01L2924/0534		44
H01L2924/05341	10	TiO2	CPCONLY	H01L2924/05341		143
H01L2924/05342	10	ZrO2	CPCONLY	H01L2924/05342		44
H01L2924/0535	9	5th Group	CPCONLY	H01L2924/0535		38
H01L2924/0536	9	6th Group	CPCONLY	H01L2924/0536		26
H01L2924/0537	9	7th Group	CPCONLY	H01L2924/0537		18
H01L2924/0538	9	8th Group	CPCONLY	H01L2924/0538		14
H01L2924/05381	10	FeOx	CPCONLY	H01L2924/05381		28
H01L2924/0539	9	9th Group	CPCONLY	H01L2924/0539		16
H01L2924/054	9	10th Group	CPCONLY	H01L2924/054		48
H01L2924/0541	9	11th Group	CPCONLY	H01L2924/0541		98
H01L2924/0542	9	12th Group	CPCONLY	H01L2924/0542		127
H01L2924/0543	9	13th Group	CPCONLY	H01L2924/0543		129
H01L2924/05432	10	Al2O3	CPCONLY	H01L2924/05432		554
H01L2924/0544	9	14th Group	CPCONLY	H01L2924/0544		218
H01L2924/05442	10	SiO2	CPCONLY	H01L2924/05442		957
H01L2924/0545	9	Lanthanides	CPCONLY	H01L2924/0545		13
H01L2924/0546	9	Actinides	CPCONLY	H01L2924/0546		1
H01L2924/0549	9	being a combination of two or more materials provided in the groups H01L2924/0531&#160;-&#160;H01L2924/0546	CPCONLY	H01L2924/0549		189
H01L2924/05491	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05491		
H01L2924/05492	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05492		
H01L2924/05494	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05494		8
H01L2924/055	8	Chalcogenides other than oxygen i.e. sulfides, selenides and tellurides composed of metals from groups of the periodic table	CPCONLY	H01L2924/055		5
H01L2924/0551	9	1st Group	CPCONLY	H01L2924/0551		
H01L2924/0552	9	2nd Group	CPCONLY	H01L2924/0552		2
H01L2924/0553	9	3rd Group	CPCONLY	H01L2924/0553		
H01L2924/0554	9	4th Group	CPCONLY	H01L2924/0554		3
H01L2924/0555	9	5th Group	CPCONLY	H01L2924/0555		
H01L2924/0556	9	6th Group	CPCONLY	H01L2924/0556		2
H01L2924/0557	9	7th Group	CPCONLY	H01L2924/0557		
H01L2924/0558	9	8th Group	CPCONLY	H01L2924/0558		
H01L2924/0559	9	9th Group	CPCONLY	H01L2924/0559		
H01L2924/056	9	10th Group	CPCONLY	H01L2924/056		1
H01L2924/0561	9	11th Group	CPCONLY	H01L2924/0561		1
H01L2924/0562	9	12th Group	CPCONLY	H01L2924/0562		1
H01L2924/0563	9	13th Group	CPCONLY	H01L2924/0563		
H01L2924/0564	9	14th Group	CPCONLY	H01L2924/0564		
H01L2924/0565	9	Lanthanides	CPCONLY	H01L2924/0565		
H01L2924/0566	9	Actinides	CPCONLY	H01L2924/0566		
H01L2924/0569	9	being a combination of two or more materials provided in the groups H01L2924/0551&#160;-&#160;H01L2924/0566	CPCONLY	H01L2924/0569		1
H01L2924/05691	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05691		
H01L2924/05692	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05692		
H01L2924/05694	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05694		
H01L2924/057	8	Halides composed of metals from groups of the periodic table	CPCONLY	H01L2924/057		3
H01L2924/0571	9	1st Group	CPCONLY	H01L2924/0571		1
H01L2924/0572	9	2nd Group	CPCONLY	H01L2924/0572		
H01L2924/0573	9	3rd Group	CPCONLY	H01L2924/0573		1
H01L2924/0574	9	4th Group	CPCONLY	H01L2924/0574		
H01L2924/0575	9	5th Group	CPCONLY	H01L2924/0575		
H01L2924/0576	9	6th Group	CPCONLY	H01L2924/0576		
H01L2924/0577	9	7th Group	CPCONLY	H01L2924/0577		
H01L2924/0578	9	8th Group	CPCONLY	H01L2924/0578		
H01L2924/0579	9	9th Group	CPCONLY	H01L2924/0579		
H01L2924/058	9	10th Group	CPCONLY	H01L2924/058		3
H01L2924/0581	9	11th Group	CPCONLY	H01L2924/0581		3
H01L2924/0582	9	12th Group	CPCONLY	H01L2924/0582		3
H01L2924/0583	9	13th Group	CPCONLY	H01L2924/0583		5
H01L2924/0584	9	14th Group	CPCONLY	H01L2924/0584		6
H01L2924/0585	9	Lanthanides	CPCONLY	H01L2924/0585		
H01L2924/0586	9	Actinides	CPCONLY	H01L2924/0586		
H01L2924/0589	9	being a combination of two or more materials provided in the groups H01L2924/0571&#160;-&#160;H01L2924/0586	CPCONLY	H01L2924/0589		
H01L2924/05891	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05891		
H01L2924/05892	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05892		
H01L2924/05894	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05894		
H01L2924/059	8	Being combinations of any of the materials from the groups H01L2924/042&#160;-&#160;H01L2924/0584, e.g. oxynitrides	CPCONLY	H01L2924/059		258
H01L2924/05991	9	having a monocrystalline microstructure	CPCONLY	H01L2924/05991		
H01L2924/05992	9	having a polycrystalline microstructure	CPCONLY	H01L2924/05992		
H01L2924/05994	9	having an amorphous microstructure, i.e. glass	CPCONLY	H01L2924/05994		14
H01L2924/06	8	Polymers	CPCONLY	H01L2924/06		340
H01L2924/061	9	Polyolefin polymer	CPCONLY	H01L2924/061		73
H01L2924/0615	9	Styrenic polymer	CPCONLY	H01L2924/0615		65
H01L2924/062	9	Halogenated polymer	CPCONLY	H01L2924/062		29
H01L2924/0625	9	Polyvinyl alchohol	CPCONLY	H01L2924/0625		22
H01L2924/063	9	Polyvinyl acetate	CPCONLY	H01L2924/063		11
H01L2924/0635	9	Acrylic polymer	CPCONLY	H01L2924/0635		378
H01L2924/064	9	Graft polymer	CPCONLY	H01L2924/064		
H01L2924/0645	9	Block copolymer	CPCONLY	H01L2924/0645		16
H01L2924/065	9	ABS	CPCONLY	H01L2924/065		13
H01L2924/0655	9	Polyacetal	CPCONLY	H01L2924/0655		24
H01L2924/066	9	Phenolic resin	CPCONLY	H01L2924/066		172
H01L2924/0665	9	Epoxy resin	CPCONLY	H01L2924/0665		4943
H01L2924/067	9	Polyphenylene	CPCONLY	H01L2924/067		26
H01L2924/0675	9	Polyester	CPCONLY	H01L2924/0675		133
H01L2924/068	9	Polycarbonate	CPCONLY	H01L2924/068		56
H01L2924/0685	9	Polyether	CPCONLY	H01L2924/0685		64
H01L2924/069	9	Polyurethane	CPCONLY	H01L2924/069		148
H01L2924/0695	9	Polyamide	CPCONLY	H01L2924/0695		149
H01L2924/07	9	Polyamine or polyimide	CPCONLY	H01L2924/07		22
H01L2924/07001	10	Polyamine	CPCONLY	H01L2924/07001		54
H01L2924/07025	10	Polyimide	CPCONLY	H01L2924/07025		617
H01L2924/0705	9	Sulfur containing polymer	CPCONLY	H01L2924/0705		32
H01L2924/0715	9	Polysiloxane	CPCONLY	H01L2924/0715		343
H01L2924/078	9	Adhesive characteristics other than chemical	CPCONLY	H01L2924/078		294
H01L2924/07802	10	not being an ohmic electrical conductor	CPCONLY	H01L2924/07802		4862
H01L2924/0781	10	being an ohmic electrical conductor	CPCONLY	H01L2924/0781		1306
H01L2924/07811	11	Extrinsic, i.e. with electrical conductive fillers	CPCONLY	H01L2924/07811		1354
H01L2924/07812	11	Intrinsic, e.g. polyaniline [PANI]	CPCONLY	H01L2924/07812		6
H01L2924/0782	10	being pressure sensitive	CPCONLY	H01L2924/0782		12
H01L2924/095	8	with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013&#160;-&#160;H01L2924/0715	CPCONLY	H01L2924/095		61
H01L2924/0951	9	Glass epoxy laminates	CPCONLY	H01L2924/0951		3
H01L2924/09511	10	FR-4	CPCONLY	H01L2924/09511		3
H01L2924/09512	10	FR-5	CPCONLY	H01L2924/09512		
H01L2924/09522	10	G10	CPCONLY	H01L2924/09522		
H01L2924/09523	10	G11	CPCONLY	H01L2924/09523		
H01L2924/096	9	Cermets, i.e. composite material composed of ceramic and metallic materials	CPCONLY	H01L2924/096		2
H01L2924/097	9	Glass-ceramics, e.g. devitrified glass	CPCONLY	H01L2924/097		13
H01L2924/09701	10	Low temperature co-fired ceramic [LTCC]	CPCONLY	H01L2924/09701		6988
H01L2924/10	8	Details of semiconductor or other solid state devices to be connected	CPCONLY	H01L2924/10		2
H01L2924/1011	9	Structure	CPCONLY	H01L2924/1011		58
H01L2924/1015	9	Shape	CPCONLY	H01L2924/1015		19
H01L2924/10155	10	being other than a cuboid	CPCONLY	H01L2924/10155		976
H01L2924/10156	11	at the periphery	CPCONLY	H01L2924/10156		485
H01L2924/10157	11	at the active surface	CPCONLY	H01L2924/10157		733
H01L2924/10158	11	at the passive surface	CPCONLY	H01L2924/10158		1547
H01L2924/1016	10	being a cuboid	CPCONLY	H01L2924/1016		12
H01L2924/10161	11	with a rectangular active surface	CPCONLY	H01L2924/10161		1165
H01L2924/10162	11	with a square active surface	CPCONLY	H01L2924/10162		1019
H01L2924/1017	10	being a sphere	CPCONLY	H01L2924/1017		79
H01L2924/102	9	Material of the semiconductor or solid state bodies	CPCONLY	H01L2924/102		2
H01L2924/1025	10	Semiconducting materials	CPCONLY	H01L2924/1025		1
H01L2924/10251	11	Elemental semiconductors, i.e. Group IV	CPCONLY	H01L2924/10251		2
H01L2924/10252	12	Germanium [Ge]	CPCONLY	H01L2924/10252		232
H01L2924/10253	12	Silicon [Si]	CPCONLY	H01L2924/10253		9735
H01L2924/10254	12	Diamond [C]	CPCONLY	H01L2924/10254		133
H01L2924/1026	11	Compound semiconductors	CPCONLY	H01L2924/1026		6
H01L2924/1027	12	IV	CPCONLY	H01L2924/1027		12
H01L2924/10271	13	Silicon-germanium [SiGe]	CPCONLY	H01L2924/10271		262
H01L2924/10272	13	Silicon Carbide [SiC]	CPCONLY	H01L2924/10272		1163
H01L2924/1032	12	III-V	CPCONLY	H01L2924/1032		98
H01L2924/10321	13	Aluminium antimonide [AlSb]	CPCONLY	H01L2924/10321		2
H01L2924/10322	13	Aluminium arsenide [AlAs]	CPCONLY	H01L2924/10322		14
H01L2924/10323	13	Aluminium nitride [AlN]	CPCONLY	H01L2924/10323		71
H01L2924/10324	13	Aluminium phosphide [AlP]	CPCONLY	H01L2924/10324		10
H01L2924/10325	13	Boron nitride [BN], e.g. cubic, hexagonal, nanotube	CPCONLY	H01L2924/10325		26
H01L2924/10326	13	Boron phosphide [BP]	CPCONLY	H01L2924/10326		1
H01L2924/10327	13	Boron arsenide [BAs, B12As2]	CPCONLY	H01L2924/10327		1
H01L2924/10328	13	Gallium antimonide [GaSb]	CPCONLY	H01L2924/10328		14
H01L2924/10329	13	Gallium arsenide [GaAs]	CPCONLY	H01L2924/10329		2580
H01L2924/1033	13	Gallium nitride [GaN]	CPCONLY	H01L2924/1033		1042
H01L2924/10331	13	Gallium phosphide [GaP]	CPCONLY	H01L2924/10331		41
H01L2924/10332	13	Indium antimonide [InSb]	CPCONLY	H01L2924/10332		27
H01L2924/10333	13	Indium arsenide [InAs]	CPCONLY	H01L2924/10333		46
H01L2924/10334	13	Indium nitride [InN]	CPCONLY	H01L2924/10334		16
H01L2924/10335	13	Indium phosphide [InP]	CPCONLY	H01L2924/10335		135
H01L2924/10336	13	Aluminium gallium arsenide [AlGaAs]	CPCONLY	H01L2924/10336		154
H01L2924/10337	13	Indium gallium arsenide [InGaAs]	CPCONLY	H01L2924/10337		54
H01L2924/10338	13	Indium gallium phosphide [InGaP]	CPCONLY	H01L2924/10338		30
H01L2924/10339	13	Aluminium indium arsenide [AlInAs]	CPCONLY	H01L2924/10339		10
H01L2924/1034	13	Aluminium indium antimonide [AlInSb]	CPCONLY	H01L2924/1034		6
H01L2924/10341	13	Gallium arsenide nitride [GaAsN]	CPCONLY	H01L2924/10341		3
H01L2924/10342	13	Gallium arsenide phosphide [GaAsP]	CPCONLY	H01L2924/10342		22
H01L2924/10343	13	Gallium arsenide antimonide [GaAsSb]	CPCONLY	H01L2924/10343		1
H01L2924/10344	13	Aluminium gallium nitride [AlGaN]	CPCONLY	H01L2924/10344		82
H01L2924/10345	13	Aluminium gallium phosphide [AlGaP]	CPCONLY	H01L2924/10345		2
H01L2924/10346	13	Indium gallium nitride [InGaN]	CPCONLY	H01L2924/10346		25
H01L2924/10347	13	Indium arsenide antimonide [InAsSb]	CPCONLY	H01L2924/10347		
H01L2924/10348	13	Indium gallium antimonide [InGaSb]	CPCONLY	H01L2924/10348		1
H01L2924/10349	13	Aluminium gallium indium phosphide [AlGaInP]	CPCONLY	H01L2924/10349		39
H01L2924/1035	13	Aluminium gallium arsenide phosphide [AlGaInP]	CPCONLY	H01L2924/1035		
H01L2924/10351	13	Indium gallium arsenide phosphide [InGaAsP]	CPCONLY	H01L2924/10351		6
H01L2924/10352	13	Indium gallium arsenide antimonide [InGaAsSb]	CPCONLY	H01L2924/10352		
H01L2924/10353	13	Indium arsenide antimonide phosphide [InAsSbP]	CPCONLY	H01L2924/10353		
H01L2924/10354	13	Aluminium indium arsenide phosphide [AlInAsP]	CPCONLY	H01L2924/10354		
H01L2924/10355	13	Aluminium gallium arsenide nitride [AlGaAsN]	CPCONLY	H01L2924/10355		2
H01L2924/10356	13	Indium gallium arsenide nitride [InGaAsN]	CPCONLY	H01L2924/10356		4
H01L2924/10357	13	Indium aluminium arsenide nitride [InAlAsN]	CPCONLY	H01L2924/10357		4
H01L2924/10358	13	Gallium arsenide antimonide nitride [GaAsSbN]	CPCONLY	H01L2924/10358		2
H01L2924/10359	13	Gallium indium nitride arsenide antimonide [GaInNAsSb]	CPCONLY	H01L2924/10359		
H01L2924/1036	13	Gallium indium arsenide antimonide phosphide [GaInAsSbP]	CPCONLY	H01L2924/1036		
H01L2924/1037	12	II-VI	CPCONLY	H01L2924/1037		19
H01L2924/10371	13	Cadmium selenide [CdSe]	CPCONLY	H01L2924/10371		2
H01L2924/10372	13	Cadmium sulfide [CdS]	CPCONLY	H01L2924/10372		7
H01L2924/10373	13	Cadmium telluride [CdTe]	CPCONLY	H01L2924/10373		7
H01L2924/10375	13	Zinc selenide [ZnSe]	CPCONLY	H01L2924/10375		8
H01L2924/10376	13	Zinc sulfide [ZnS]	CPCONLY	H01L2924/10376		7
H01L2924/10377	13	Zinc telluride [ZnTe]	CPCONLY	H01L2924/10377		1
H01L2924/10378	13	Cadmium zinc telluride, i.e. CZT [CdZnTe]	CPCONLY	H01L2924/10378		2
H01L2924/10379	13	Mercury cadmium telluride [HgZnTe]	CPCONLY	H01L2924/10379		4
H01L2924/1038	13	Mercury zinc telluride [HgZnSe]	CPCONLY	H01L2924/1038		
H01L2924/10381	13	Mercury zinc selenide [HgZnSe]	CPCONLY	H01L2924/10381		
H01L2924/1042	12	I-VII	CPCONLY	H01L2924/1042		
H01L2924/10421	13	Cuprous chloride [CuCl]	CPCONLY	H01L2924/10421		
H01L2924/1047	12	I-VI	CPCONLY	H01L2924/1047		1
H01L2924/10471	13	Copper sulfide [CuS]	CPCONLY	H01L2924/10471		2
H01L2924/1052	12	IV-VI	CPCONLY	H01L2924/1052		
H01L2924/10521	13	Lead selenide [PbSe]	CPCONLY	H01L2924/10521		
H01L2924/10522	13	Lead(II)sulfide [PbS]	CPCONLY	H01L2924/10522		1
H01L2924/10523	13	Lead telluride [PbTe]	CPCONLY	H01L2924/10523		3
H01L2924/10524	13	Tin sulfide [SnS, SnS2]	CPCONLY	H01L2924/10524		3
H01L2924/10525	13	Tin telluride [SnTe]	CPCONLY	H01L2924/10525		1
H01L2924/10526	13	Lead tin telluride [PbSnTe]	CPCONLY	H01L2924/10526		
H01L2924/10527	13	Thallium tin telluride [Tl2SnTe5]	CPCONLY	H01L2924/10527		
H01L2924/10528	13	Thallium germanium telluride [Tl2GeTe5]	CPCONLY	H01L2924/10528		
H01L2924/1057	12	V-VI	CPCONLY	H01L2924/1057		
H01L2924/10571	13	Bismuth telluride [Bi2Te3]	CPCONLY	H01L2924/10571		
H01L2924/1062	12	II-V	CPCONLY	H01L2924/1062		1
H01L2924/10621	13	Cadmium phosphide [Cd3P2]	CPCONLY	H01L2924/10621		
H01L2924/10622	13	Cadmium arsenide [Cd3As2]	CPCONLY	H01L2924/10622		
H01L2924/10623	13	Cadmium antimonide [Cd3Sb2]	CPCONLY	H01L2924/10623		
H01L2924/10624	13	Zinc phosphide [Zn3P2]	CPCONLY	H01L2924/10624		
H01L2924/10625	13	Zinc arsenide [Zn3As2]	CPCONLY	H01L2924/10625		
H01L2924/10626	13	Zinc antimonide [Zn3Sb2]	CPCONLY	H01L2924/10626		
H01L2924/1067	12	Oxide	CPCONLY	H01L2924/1067		25
H01L2924/10671	13	Titanium dioxide, anatase, rutile, brookite [TiO2]	CPCONLY	H01L2924/10671		2
H01L2924/10672	13	Copper(I)oxide [Cu2O]	CPCONLY	H01L2924/10672		4
H01L2924/10673	13	Copper(II)oxide [CuO]	CPCONLY	H01L2924/10673		2
H01L2924/10674	13	Uranium dioxide [UO2]	CPCONLY	H01L2924/10674		
H01L2924/10675	13	Uranium trioxide [UO3]	CPCONLY	H01L2924/10675		
H01L2924/10676	13	Bismuth trioxide [Bi2O3]	CPCONLY	H01L2924/10676		
H01L2924/10677	13	Tin dioxide [SnO2]	CPCONLY	H01L2924/10677		4
H01L2924/10678	13	Barium titanate [BaTiO3]	CPCONLY	H01L2924/10678		2
H01L2924/10679	13	Strontium titanate [SrTiO3]	CPCONLY	H01L2924/10679		2
H01L2924/1068	13	Lithium niobate [LiNbO3]	CPCONLY	H01L2924/1068		5
H01L2924/10681	13	Lanthanum copper oxide [La2CuO4]	CPCONLY	H01L2924/10681		
H01L2924/1072	12	Layered	CPCONLY	H01L2924/1072		
H01L2924/10721	13	Lead(II)iodide [PbI2]	CPCONLY	H01L2924/10721		
H01L2924/10722	13	Molybdenum disulfide [MoS2]	CPCONLY	H01L2924/10722		9
H01L2924/10723	13	Gallium selenide [GaSe]	CPCONLY	H01L2924/10723		1
H01L2924/10724	13	Tin sulfide [SnS]	CPCONLY	H01L2924/10724		3
H01L2924/10725	13	Bismuth sulfide [Bi2S3]	CPCONLY	H01L2924/10725		
H01L2924/1077	12	Magnetic diluted [DMS]	CPCONLY	H01L2924/1077		1
H01L2924/10771	13	Gallium manganese arsenide [GaMnAs]	CPCONLY	H01L2924/10771		
H01L2924/10772	13	Indium manganese arsenide [InMnAs]	CPCONLY	H01L2924/10772		1
H01L2924/10773	13	Cadmium manganese telluride [CdMnTe]	CPCONLY	H01L2924/10773		
H01L2924/10774	13	Lead manganese telluride [PbMnTe]	CPCONLY	H01L2924/10774		
H01L2924/10775	13	Lanthanum calcium manganate [La0.7Ca0.3MnO3]	CPCONLY	H01L2924/10775		
H01L2924/10776	13	Iron(II)oxide [FeO]	CPCONLY	H01L2924/10776		
H01L2924/10777	13	Nickel(II)oxide [NiO]	CPCONLY	H01L2924/10777		3
H01L2924/10778	13	Europium(II)oxide [EuO]	CPCONLY	H01L2924/10778		
H01L2924/10779	13	Europium(II)sulfide [EuS]	CPCONLY	H01L2924/10779		
H01L2924/1078	13	Chromium(III)bromide [CrBr3]	CPCONLY	H01L2924/1078		
H01L2924/1082	12	Other	CPCONLY	H01L2924/1082		5
H01L2924/10821	13	Copper indium gallium selenide, CIGS [Cu[In,Ga]Se2]	CPCONLY	H01L2924/10821		4
H01L2924/10822	13	Copper zinc tin sulfide, CZTS [Cu2ZnSnS4]	CPCONLY	H01L2924/10822		1
H01L2924/10823	13	Copper indium selenide, CIS [CuInSe2]	CPCONLY	H01L2924/10823		2
H01L2924/10824	13	Silver gallium sulfide [AgGaS2]	CPCONLY	H01L2924/10824		
H01L2924/10825	13	Zinc silicon phosphide [ZnSiP2]	CPCONLY	H01L2924/10825		
H01L2924/10826	13	Arsenic selenide [As2S3]	CPCONLY	H01L2924/10826		
H01L2924/10827	13	Platinum silicide [PtSi]	CPCONLY	H01L2924/10827		
H01L2924/10828	13	Bismuth(III)iodide [BiI3]	CPCONLY	H01L2924/10828		
H01L2924/10829	13	Mercury(II)iodide [HgI2]	CPCONLY	H01L2924/10829		
H01L2924/1083	13	Thallium(I)bromide [TlBr]	CPCONLY	H01L2924/1083		
H01L2924/10831	13	Selenium [Se]	CPCONLY	H01L2924/10831		1
H01L2924/10832	13	Silver sulfide [Ag2S]	CPCONLY	H01L2924/10832		
H01L2924/10833	13	Iron disulfide [FeS2]	CPCONLY	H01L2924/10833		
H01L2924/11	9	Device type	CPCONLY	H01L2924/11		13
H01L2924/12	10	Passive devices, e.g. 2 terminal devices	CPCONLY	H01L2924/12		58
H01L2924/1203	11	Rectifying Diode	CPCONLY	H01L2924/1203		751
H01L2924/12031	12	PIN diode	CPCONLY	H01L2924/12031		36
H01L2924/12032	12	Schottky diode	CPCONLY	H01L2924/12032		1889
H01L2924/12033	12	Gunn diode	CPCONLY	H01L2924/12033		323
H01L2924/12034	12	Varactor	CPCONLY	H01L2924/12034		78
H01L2924/12035	12	Zener diode	CPCONLY	H01L2924/12035		476
H01L2924/12036	12	PN diode	CPCONLY	H01L2924/12036		1432
H01L2924/12037	12	Cat&apos;s whisker diode	CPCONLY	H01L2924/12037		17
H01L2924/12038	12	Point contact	CPCONLY	H01L2924/12038		
H01L2924/1204	11	Optical Diode	CPCONLY	H01L2924/1204		80
H01L2924/12041	12	LED	CPCONLY	H01L2924/12041		7729
H01L2924/12042	12	LASER	CPCONLY	H01L2924/12042		6726
H01L2924/12043	12	Photo diode	CPCONLY	H01L2924/12043		1021
H01L2924/12044	12	OLED	CPCONLY	H01L2924/12044		4071
H01L2924/1205	11	Capacitor	CPCONLY	H01L2924/1205		273
H01L2924/1206	11	Inductor	CPCONLY	H01L2924/1206		150
H01L2924/1207	11	Resistor	CPCONLY	H01L2924/1207		133
H01L2924/13	10	Discrete devices, e.g. 3 terminal devices	CPCONLY	H01L2924/13		9
H01L2924/1301	11	Thyristor	CPCONLY	H01L2924/1301		2616
H01L2924/13011	12	Anode Gate Thyristor [AGT]	CPCONLY	H01L2924/13011		4
H01L2924/13013	12	Bidirectional Control Thyristor [BCT]	CPCONLY	H01L2924/13013		3
H01L2924/13014	12	Breakover Diode [BOD]	CPCONLY	H01L2924/13014		1
H01L2924/13015	12	DIAC - Bidirectional trigger device	CPCONLY	H01L2924/13015		2
H01L2924/13016	12	Dynistor - Unidirectional switching device	CPCONLY	H01L2924/13016		
H01L2924/13017	12	Shockley diode - Unidirectional trigger and switching device	CPCONLY	H01L2924/13017		2
H01L2924/13018	12	SIDAC - Bidirectional switching device	CPCONLY	H01L2924/13018		2
H01L2924/13019	12	Trisil, SIDACtor - Bidirectional protection devices	CPCONLY	H01L2924/13019		
H01L2924/1302	12	GTO - Gate Turn-Off thyristor	CPCONLY	H01L2924/1302		30
H01L2924/13021	13	DB-GTO - Distributed Buffer Gate Turn-Off thyristor	CPCONLY	H01L2924/13021		1
H01L2924/13022	13	MA-GTO - Modified Anode Gate Turn-Off thyristor	CPCONLY	H01L2924/13022		2
H01L2924/13023	12	IGCT - Integrated Gate Commutated Thyristor	CPCONLY	H01L2924/13023		11
H01L2924/13024	12	LASCR - Light Activated SCR, or LTT - Light triggered thyristor	CPCONLY	H01L2924/13024		
H01L2924/13025	12	Light Activated Semiconducting Switch [LASS]	CPCONLY	H01L2924/13025		
H01L2924/13026	12	MCT - MOSFET Controlled Thyristor - It contains two additional FET structures for on/off control	CPCONLY	H01L2924/13026		8
H01L2924/13027	12	BRT - Base Resistance Controlled Thyristor	CPCONLY	H01L2924/13027		1
H01L2924/13028	12	RCT - Reverse Conducting Thyristor	CPCONLY	H01L2924/13028		2
H01L2924/13029	12	PUT or PUJT - Programmable Unijunction Transistor - A thyristor with gate on n-type layer near to the anode used as a functional replacement for unijunction transistor	CPCONLY	H01L2924/13029		
H01L2924/1303	12	SCS - Silicon Controlled Switch or Thyristor Tetrode - A thyristor with both cathode and anode gates	CPCONLY	H01L2924/1303		1
H01L2924/13032	12	SITh - Static Induction Thyristor, or FCTh - Field Controlled Thyristor - containing a gate structure that can shut down anode current flow	CPCONLY	H01L2924/13032		5
H01L2924/13033	12	TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact	CPCONLY	H01L2924/13033		288
H01L2924/13034	12	Silicon Controlled Rectifier [SCR]	CPCONLY	H01L2924/13034		384
H01L2924/13035	13	Asymmetrical SCR [ASCR]	CPCONLY	H01L2924/13035		1
H01L2924/1304	11	Transistor	CPCONLY	H01L2924/1304		375
H01L2924/1305	12	Bipolar Junction Transistor [BJT]	CPCONLY	H01L2924/1305		6429
H01L2924/13051	13	Heterojunction bipolar transistor [HBT]	CPCONLY	H01L2924/13051		75
H01L2924/13052	13	Schottky transistor	CPCONLY	H01L2924/13052		4
H01L2924/13053	13	Avalanche transistor	CPCONLY	H01L2924/13053		
H01L2924/13054	13	Darlington transistor	CPCONLY	H01L2924/13054		3
H01L2924/13055	13	Insulated gate bipolar transistor [IGBT]	CPCONLY	H01L2924/13055		8842
H01L2924/13056	13	Photo transistor	CPCONLY	H01L2924/13056		10
H01L2924/1306	12	Field-effect transistor [FET]	CPCONLY	H01L2924/1306		2997
H01L2924/13061	13	Carbon nanotube field-effect transistor [CNFET]	CPCONLY	H01L2924/13061		10
H01L2924/13062	13	Junction field-effect transistor [JFET]	CPCONLY	H01L2924/13062		738
H01L2924/13063	13	Metal-Semiconductor Field-Effect Transistor [MESFET]	CPCONLY	H01L2924/13063		286
H01L2924/13064	13	High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]	CPCONLY	H01L2924/13064		551
H01L2924/13066	13	Inverted-T field effect transistor [ITFET]	CPCONLY	H01L2924/13066		2
H01L2924/13067	13	FinFET, source/drain region shapes fins on the silicon surface	CPCONLY	H01L2924/13067		63
H01L2924/13068	13	Fast-reverse epitaxial diode field-effect transistor [FREDFET]	CPCONLY	H01L2924/13068		1
H01L2924/13069	13	Thin film transistor [TFT]	CPCONLY	H01L2924/13069		268
H01L2924/1307	13	Organic Field-Effect Transistor [OFET]	CPCONLY	H01L2924/1307		25
H01L2924/13071	13	Ballistic transistor	CPCONLY	H01L2924/13071		
H01L2924/13072	13	Sensor FET	CPCONLY	H01L2924/13072		8
H01L2924/13073	14	ion-sensitive field-effect transistor [ISFET]	CPCONLY	H01L2924/13073		7
H01L2924/13074	14	Electrolyte-oxide-semiconductor field effect transistor [EOSFET], e.g. Neurochip	CPCONLY	H01L2924/13074		1
H01L2924/13075	14	Deoxyribonucleic acid field-effect transistor [DNAFET]	CPCONLY	H01L2924/13075		1
H01L2924/13076	14	DEPFET	CPCONLY	H01L2924/13076		
H01L2924/13078	13	Unijunction transistors	CPCONLY	H01L2924/13078		1
H01L2924/13079	13	Single-electron transistors [SET]	CPCONLY	H01L2924/13079		
H01L2924/1308	13	Nanofluidic transistor	CPCONLY	H01L2924/1308		1
H01L2924/13081	13	Multigate devices	CPCONLY	H01L2924/13081		3
H01L2924/13082	14	Tetrode transistor	CPCONLY	H01L2924/13082		2
H01L2924/13083	14	Pentode transistor	CPCONLY	H01L2924/13083		
H01L2924/13084	14	Trigate transistor	CPCONLY	H01L2924/13084		4
H01L2924/13085	14	Dual gate FETs	CPCONLY	H01L2924/13085		8
H01L2924/13086	13	Junctionless Nanowire Transistor [JNT]	CPCONLY	H01L2924/13086		6
H01L2924/13087	13	Vertical-Slit Field-Effect Transistor [VeSFET]	CPCONLY	H01L2924/13087		
H01L2924/13088	13	Graphene Nanoribbon Field-Effect Transistor [GNRFET]	CPCONLY	H01L2924/13088		13
H01L2924/13089	13	Nanoparticle Organic Memory Field-Effect Transistor [NOMFET]	CPCONLY	H01L2924/13089		
H01L2924/1309	13	Modulation-Doped Field Effect Transistor [MODFET]	CPCONLY	H01L2924/1309		2
H01L2924/13091	13	Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]	CPCONLY	H01L2924/13091		11628
H01L2924/13092	14	Dual Gate Metal-Oxide-Semiconductor Field-Effect Transistor [DGMOSFET]	CPCONLY	H01L2924/13092		6
H01L2924/14	10	Integrated circuits	CPCONLY	H01L2924/14		30527
H01L2924/141	11	Analog devices	CPCONLY	H01L2924/141		140
H01L2924/142	12	HF devices	CPCONLY	H01L2924/142		63
H01L2924/1421	13	RF devices	CPCONLY	H01L2924/1421		516
H01L2924/14211	14	Voltage-controlled oscillator [VCO]	CPCONLY	H01L2924/14211		31
H01L2924/14215	14	Low-noise amplifier [LNA]	CPCONLY	H01L2924/14215		54
H01L2924/1422	14	Mixer	CPCONLY	H01L2924/1422		3
H01L2924/14221	15	Electronic mixer	CPCONLY	H01L2924/14221		
H01L2924/14222	15	Frequency mixer	CPCONLY	H01L2924/14222		3
H01L2924/1423	12	Monolithic Microwave Integrated Circuit [MMIC]	CPCONLY	H01L2924/1423		748
H01L2924/1424	12	Operational amplifier	CPCONLY	H01L2924/1424		33
H01L2924/1425	12	Converter	CPCONLY	H01L2924/1425		53
H01L2924/14251	13	Frequency converter	CPCONLY	H01L2924/14251		3
H01L2924/14252	13	Voltage converter	CPCONLY	H01L2924/14252		96
H01L2924/14253	13	Digital-to-analog converter [DAC]	CPCONLY	H01L2924/14253		40
H01L2924/1426	12	Driver	CPCONLY	H01L2924/1426		273
H01L2924/1427	12	Voltage regulator [VR]	CPCONLY	H01L2924/1427		109
H01L2924/143	11	Digital devices	CPCONLY	H01L2924/143		106
H01L2924/1431	12	Logic devices	CPCONLY	H01L2924/1431		2287
H01L2924/1432	12	Central processing unit [CPU]	CPCONLY	H01L2924/1432		505
H01L2924/1433	12	Application-specific integrated circuit [ASIC]	CPCONLY	H01L2924/1433		1903
H01L2924/14335	12	Digital signal processor [DSP]	CPCONLY	H01L2924/14335		148
H01L2924/1434	12	Memory	CPCONLY	H01L2924/1434		1968
H01L2924/1435	13	Random access memory [RAM]	CPCONLY	H01L2924/1435		115
H01L2924/1436	14	Dynamic random-access memory [DRAM]	CPCONLY	H01L2924/1436		1130
H01L2924/14361	15	Synchronous dynamic random access memory [SDRAM]	CPCONLY	H01L2924/14361		73
H01L2924/14362	16	RAS Only Refresh [ROR]	CPCONLY	H01L2924/14362		
H01L2924/14363	16	CAS before RAS refresh [CBR]	CPCONLY	H01L2924/14363		
H01L2924/14364	15	Multibank DRAM [MDRAM]	CPCONLY	H01L2924/14364		1
H01L2924/14365	15	Video DRAM [VRAM]	CPCONLY	H01L2924/14365		1
H01L2924/14366	15	Window DRAM [WRAM]	CPCONLY	H01L2924/14366		
H01L2924/14367	15	Fast page mode DRAM [FPM DRAM]	CPCONLY	H01L2924/14367		
H01L2924/14368	15	Extended data out DRAM [EDO DRAM]	CPCONLY	H01L2924/14368		
H01L2924/14369	15	Burst EDO DRAM [BEDO DRAM]	CPCONLY	H01L2924/14369		
H01L2924/1437	14	Static random-access memory [SRAM]	CPCONLY	H01L2924/1437		402
H01L2924/1438	14	Flash memory	CPCONLY	H01L2924/1438		489
H01L2924/1441	14	Ferroelectric RAM [FeRAM or FRAM]	CPCONLY	H01L2924/1441		154
H01L2924/1442	14	Synchronous graphics RAM [SGRAM]	CPCONLY	H01L2924/1442		
H01L2924/1443	14	Non-volatile random-access memory [NVRAM]	CPCONLY	H01L2924/1443		168
H01L2924/1444	14	PBRAM	CPCONLY	H01L2924/1444		11
H01L2924/145	13	Read-only memory [ROM]	CPCONLY	H01L2924/145		38
H01L2924/1451	14	EPROM	CPCONLY	H01L2924/1451		15
H01L2924/14511	15	EEPROM	CPCONLY	H01L2924/14511		614
H01L2924/1453	14	PROM	CPCONLY	H01L2924/1453		4
H01L2924/146	9	Mixed devices	CPCONLY	H01L2924/146		40
H01L2924/1461	10	MEMS	CPCONLY	H01L2924/1461		2958
H01L2924/15	8	Details of package parts other than the semiconductor or other solid state devices to be connected	CPCONLY	H01L2924/15		18
H01L2924/151	9	Die mounting substrate	CPCONLY	H01L2924/151		20
H01L2924/1511	10	Structure	CPCONLY	H01L2924/1511		72
H01L2924/1515	10	Shape	CPCONLY	H01L2924/1515		151
H01L2924/15151	11	the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections	CPCONLY	H01L2924/15151		1676
H01L2924/15153	11	the die mounting substrate comprising a recess for hosting the device	CPCONLY	H01L2924/15153		7034
H01L2924/15155	12	the shape of the recess being other than a cuboid	CPCONLY	H01L2924/15155		114
H01L2924/15156	13	Side view	CPCONLY	H01L2924/15156		457
H01L2924/15157	13	Top view	CPCONLY	H01L2924/15157		189
H01L2924/15158	11	the die mounting substrate being other than a cuboid	CPCONLY	H01L2924/15158		40
H01L2924/15159	12	Side view	CPCONLY	H01L2924/15159		674
H01L2924/15162	12	Top view	CPCONLY	H01L2924/15162		177
H01L2924/15165	10	Monolayer substrate	CPCONLY	H01L2924/15165		2494
H01L2924/1517	10	Multilayer substrate	CPCONLY	H01L2924/1517		2195
H01L2924/15172	11	Fan-out arrangement of the internal vias	CPCONLY	H01L2924/15172		50
H01L2924/15173	12	in a single layer of the multilayer substrate	CPCONLY	H01L2924/15173		769
H01L2924/15174	12	in different layers of the multilayer substrate	CPCONLY	H01L2924/15174		2322
H01L2924/15182	11	Fan-in arrangement of the internal vias	CPCONLY	H01L2924/15182		31
H01L2924/15183	12	in a single layer of the multilayer substrate	CPCONLY	H01L2924/15183		255
H01L2924/15184	12	in different layers of the multilayer substrate	CPCONLY	H01L2924/15184		528
H01L2924/15192	11	Resurf arrangement of the internal vias	CPCONLY	H01L2924/15192		3428
H01L2924/152	10	Disposition	CPCONLY	H01L2924/152		29
H01L2924/153	10	Connection portion	CPCONLY	H01L2924/153		27
H01L2924/1531	11	the connection portion being formed only on the surface of the substrate opposite to the die mounting surface	CPCONLY	H01L2924/1531		214
H01L2924/15311	12	being a ball array, e.g. BGA	CPCONLY	H01L2924/15311		28198
H01L2924/15312	12	being a pin array, e.g. PGA	CPCONLY	H01L2924/15312		2361
H01L2924/15313	12	being a land array, e.g. LGA	CPCONLY	H01L2924/15313		1319
H01L2924/1532	11	the connection portion being formed on the die mounting surface of the substrate	CPCONLY	H01L2924/1532		1883
H01L2924/15321	12	being a ball array, e.g. BGA	CPCONLY	H01L2924/15321		1068
H01L2924/15322	12	being a pin array, e.g. PGA	CPCONLY	H01L2924/15322		68
H01L2924/15323	12	being a land array, e.g. LGA	CPCONLY	H01L2924/15323		82
H01L2924/1533	12	the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate	CPCONLY	H01L2924/1533		243
H01L2924/15331	13	being a ball array, e.g. BGA	CPCONLY	H01L2924/15331		2129
H01L2924/15332	13	being a pin array, e.g. PGA	CPCONLY	H01L2924/15332		6
H01L2924/15333	13	being a land array, e.g. LGA	CPCONLY	H01L2924/15333		55
H01L2924/156	10	Material	CPCONLY	H01L2924/156		5
H01L2924/157	11	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2924/157		613
H01L2924/15701	12	the principal constituent melting at a temperature of less than 400 C	CPCONLY	H01L2924/15701		7
H01L2924/15717	12	the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C	CPCONLY	H01L2924/15717		3
H01L2924/15724	13	Aluminium [Al] as principal constituent	CPCONLY	H01L2924/15724		140
H01L2924/15738	12	the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C	CPCONLY	H01L2924/15738		115
H01L2924/15747	13	Copper [Cu] as principal constituent	CPCONLY	H01L2924/15747		2060
H01L2924/1576	13	Iron [Fe] as principal constituent	CPCONLY	H01L2924/1576		102
H01L2924/15763	12	the principal constituent melting at a temperature of greater than 1550 C	CPCONLY	H01L2924/15763		41
H01L2924/15786	11	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2924/15786		26
H01L2924/15787	12	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2924/15787		4881
H01L2924/15788	12	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2924/15788		1615
H01L2924/1579	11	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2924/1579		555
H01L2924/15791	12	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2924/15791		7
H01L2924/15793	11	with a principal constituent of the material being a solid not provided for in groups H01L2924/157&#160;-&#160;H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2924/15793		11
H01L2924/15798	11	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2924/15798		36
H01L2924/161	9	Cap	CPCONLY	H01L2924/161		48
H01L2924/1611	10	Structure	CPCONLY	H01L2924/1611		44
H01L2924/1615	10	Shape	CPCONLY	H01L2924/1615		52
H01L2924/16151	11	Cap comprising an aperture, e.g. for pressure control, encapsulation	CPCONLY	H01L2924/16151		538
H01L2924/16152	11	Cap comprising a cavity for hosting the device, e.g. U-shaped cap	CPCONLY	H01L2924/16152		5195
H01L2924/16153	12	Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]	CPCONLY	H01L2924/16153		172
H01L2924/1616	12	Cavity shape	CPCONLY	H01L2924/1616		264
H01L2924/1617	12	Cavity coating	CPCONLY	H01L2924/1617		114
H01L2924/16171	13	Material	CPCONLY	H01L2924/16171		2
H01L2924/16172	14	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2924/16172		24
H01L2924/16173	14	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2924/16173		
H01L2924/16174	15	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2924/16174		
H01L2924/16175	15	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2924/16175		
H01L2924/16176	14	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2924/16176		4
H01L2924/16177	15	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2924/16177		
H01L2924/16178	14	with a principal constituent of the material being a solid not provided for in groups H01L2924/157&#160;-&#160;H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2924/16178		1
H01L2924/16179	14	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2924/16179		1
H01L2924/1619	12	Cavity coating shape	CPCONLY	H01L2924/1619		3
H01L2924/16195	11	Flat cap [not enclosing an internal cavity]	CPCONLY	H01L2924/16195		5965
H01L2924/16196	11	Cap forming a cavity, e.g. being a curved metal foil	CPCONLY	H01L2924/16196		40
H01L2924/162	10	Disposition	CPCONLY	H01L2924/162		1
H01L2924/16235	11	Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip	CPCONLY	H01L2924/16235		821
H01L2924/16251	11	Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate	CPCONLY	H01L2924/16251		932
H01L2924/1626	11	Cap-in-cap assemblies	CPCONLY	H01L2924/1626		8
H01L2924/1627	11	stacked type assemblies, e.g. stacked multi-cavities	CPCONLY	H01L2924/1627		320
H01L2924/163	10	Connection portion, e.g. seal	CPCONLY	H01L2924/163		227
H01L2924/1631	11	Structure	CPCONLY	H01L2924/1631		42
H01L2924/16315	11	Shape	CPCONLY	H01L2924/16315		303
H01L2924/1632	11	Disposition	CPCONLY	H01L2924/1632		90
H01L2924/164	11	Material	CPCONLY	H01L2924/164		32
H01L2924/165	12	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2924/165		45
H01L2924/16586	12	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2924/16586		2
H01L2924/16587	13	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2924/16587		2
H01L2924/16588	13	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2924/16588		11
H01L2924/1659	12	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2924/1659		68
H01L2924/16593	12	with a principal constituent of the material being a solid not provided for in groups H01L2924/157&#160;-&#160;H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2924/16593		
H01L2924/16598	12	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2924/16598		6
H01L2924/166	10	Material	CPCONLY	H01L2924/166		106
H01L2924/167	11	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2924/167		74
H01L2924/16701	12	the principal constituent melting at a temperature of less than 400 C	CPCONLY	H01L2924/16701		
H01L2924/16717	12	the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C	CPCONLY	H01L2924/16717		
H01L2924/16724	13	Aluminium [Al] as principal constituent	CPCONLY	H01L2924/16724		26
H01L2924/16738	12	the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C	CPCONLY	H01L2924/16738		1
H01L2924/16747	13	Copper [Cu] as principal constituent	CPCONLY	H01L2924/16747		49
H01L2924/1676	13	Iron [Fe] as principal constituent	CPCONLY	H01L2924/1676		13
H01L2924/16763	12	the principal constituent melting at a temperature of greater than 1550 C	CPCONLY	H01L2924/16763		
H01L2924/16786	11	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2924/16786		
H01L2924/16787	12	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2924/16787		35
H01L2924/16788	12	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2924/16788		35
H01L2924/1679	11	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2924/1679		26
H01L2924/16791	12	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2924/16791		
H01L2924/16793	11	with a principal constituent of the material being a solid not provided for in groups H01L2924/167&#160;-&#160;H01L2924/16791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2924/16793		5
H01L2924/16798	11	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2924/16798		1
H01L2924/171	9	Frame	CPCONLY	H01L2924/171		90
H01L2924/1711	10	Structure	CPCONLY	H01L2924/1711		31
H01L2924/1715	10	Shape	CPCONLY	H01L2924/1715		65
H01L2924/17151	11	Frame comprising an aperture, e.g. for pressure control, encapsulation	CPCONLY	H01L2924/17151		30
H01L2924/172	10	Disposition	CPCONLY	H01L2924/172		20
H01L2924/173	10	Connection portion, e.g. seal	CPCONLY	H01L2924/173		35
H01L2924/176	10	Material	CPCONLY	H01L2924/176		4
H01L2924/177	11	with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof	CPCONLY	H01L2924/177		5
H01L2924/17701	12	the principal constituent melting at a temperature of less than 400 C	CPCONLY	H01L2924/17701		1
H01L2924/17717	12	the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C	CPCONLY	H01L2924/17717		
H01L2924/17724	13	Aluminium [Al] as principal constituent	CPCONLY	H01L2924/17724		15
H01L2924/17738	12	the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C	CPCONLY	H01L2924/17738		12
H01L2924/17747	13	Copper [Cu] as principal constituent	CPCONLY	H01L2924/17747		52
H01L2924/1776	13	Iron [Fe] as principal constituent	CPCONLY	H01L2924/1776		9
H01L2924/17763	12	the principal constituent melting at a temperature of greater than 1550 C	CPCONLY	H01L2924/17763		3
H01L2924/17786	11	with a principal constituent of the material being a non metallic, non metalloid inorganic material	CPCONLY	H01L2924/17786		
H01L2924/17787	12	Ceramics, e.g. crystalline carbides, nitrides or oxides	CPCONLY	H01L2924/17787		6
H01L2924/17788	12	Glasses, e.g. amorphous oxides, nitrides or fluorides	CPCONLY	H01L2924/17788		2
H01L2924/1779	11	with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy	CPCONLY	H01L2924/1779		3
H01L2924/17791	12	The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene	CPCONLY	H01L2924/17791		2
H01L2924/17793	11	with a principal constituent of the material being a solid not provided for in groups H01L2924/177&#160;-&#160;H01L2924/17791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond	CPCONLY	H01L2924/17793		1
H01L2924/17798	11	with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams	CPCONLY	H01L2924/17798		
H01L2924/181	9	Encapsulation	CPCONLY	H01L2924/181		46671
H01L2924/1811	10	Structure	CPCONLY	H01L2924/1811		165
H01L2924/1815	10	Shape	CPCONLY	H01L2924/1815		4907
H01L2924/1816	11	Exposing the passive side of the semiconductor or solid-state body	CPCONLY	H01L2924/1816		61
H01L2924/18161	12	of a flip chip	CPCONLY	H01L2924/18161		2825
H01L2924/18162	12	of a chip with build-up interconnect	CPCONLY	H01L2924/18162		1966
H01L2924/18165	12	of a wire bonded chip	CPCONLY	H01L2924/18165		857
H01L2924/182	10	Disposition	CPCONLY	H01L2924/182		574
H01L2924/183	10	Connection portion, e.g. seal	CPCONLY	H01L2924/183		77
H01L2924/18301	11	being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part	CPCONLY	H01L2924/18301		929
H01L2924/186	10	Material	CPCONLY	H01L2924/186		237
H01L2924/19	8	Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected	CPCONLY	H01L2924/19		2
H01L2924/1901	9	Structure	CPCONLY	H01L2924/1901		4
H01L2924/19011	10	including integrated passive components	CPCONLY	H01L2924/19011		394
H01L2924/19015	10	including thin film passive components	CPCONLY	H01L2924/19015		133
H01L2924/1902	10	including thick film passive components	CPCONLY	H01L2924/1902		24
H01L2924/1903	10	including wave guides	CPCONLY	H01L2924/1903		401
H01L2924/19031	11	being a strip line type	CPCONLY	H01L2924/19031		17
H01L2924/19032	11	being a microstrip line type	CPCONLY	H01L2924/19032		103
H01L2924/19033	11	being a coplanar line type	CPCONLY	H01L2924/19033		70
H01L2924/19038	11	being a hybrid line type	CPCONLY	H01L2924/19038		2
H01L2924/19039	12	impedance transition between different types of wave guides	CPCONLY	H01L2924/19039		43
H01L2924/1904	10	Component type	CPCONLY	H01L2924/1904		15
H01L2924/19041	11	being a capacitor	CPCONLY	H01L2924/19041		9205
H01L2924/19042	11	being an inductor	CPCONLY	H01L2924/19042		3163
H01L2924/19043	11	being a resistor	CPCONLY	H01L2924/19043		5065
H01L2924/1905	9	Shape	CPCONLY	H01L2924/1905		4
H01L2924/19051	10	Impedance matching structure [e.g. balun]	CPCONLY	H01L2924/19051		124
H01L2924/191	9	Disposition	CPCONLY	H01L2924/191		3
H01L2924/19101	10	of discrete passive components	CPCONLY	H01L2924/19101		39
H01L2924/19102	11	in a stacked assembly with the semiconductor or solid state device	CPCONLY	H01L2924/19102		122
H01L2924/19103	12	interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive	CPCONLY	H01L2924/19103		526
H01L2924/19104	12	on the semiconductor or solid-state device, i.e. passive-on-chip	CPCONLY	H01L2924/19104		909
H01L2924/19105	11	in a side-by-side arrangement on a common die mounting substrate	CPCONLY	H01L2924/19105		7353
H01L2924/19106	11	in a mirrored arrangement on two different side of a common die mounting substrate	CPCONLY	H01L2924/19106		936
H01L2924/19107	11	off-chip wires	CPCONLY	H01L2924/19107		7295
H01L2924/20	8	Parameters	CPCONLY	H01L2924/20		3
H01L2924/201	9	Temperature ranges	CPCONLY	H01L2924/201		18
H01L2924/20101	10	Temperature range T&lt;0 C, T&lt;273.15 K	CPCONLY	H01L2924/20101		9
H01L2924/20102	10	Temperature range 0 C=&lt;T&lt;60 C, 273.15 K =&lt;T&lt; 333.15K	CPCONLY	H01L2924/20102		60
H01L2924/20103	10	Temperature range 60 C=&lt;T&lt;100 C, 333.15 K =&lt; T&lt; 373.15K	CPCONLY	H01L2924/20103		79
H01L2924/20104	10	Temperature range 100 C=&lt;T&lt;150 C, 373.15 K =&lt; T &lt; 423.15K	CPCONLY	H01L2924/20104		135
H01L2924/20105	10	Temperature range 150 C=&lt;T&lt;200 C, 423.15 K =&lt; T &lt; 473.15K	CPCONLY	H01L2924/20105		252
H01L2924/20106	10	Temperature range 200 C=&lt;T&lt;250 C, 473.15 K =&lt;T &lt; 523.15K	CPCONLY	H01L2924/20106		284
H01L2924/20107	10	Temperature range 250 C=&lt;T&lt;300 C, 523.15K =&lt;T&lt; 573.15K	CPCONLY	H01L2924/20107		222
H01L2924/20108	10	Temperature range 300 C=&lt;T&lt;350 C, 573.15K =&lt;T&lt; 623.15K	CPCONLY	H01L2924/20108		186
H01L2924/20109	10	Temperature range 350 C=&lt;T&lt;400 C, 623.15K =&lt;T&lt; 673.15K	CPCONLY	H01L2924/20109		147
H01L2924/2011	10	Temperature range 400 C=&lt;T&lt;450 C, 673.15K =&lt;T&lt; 723.15K	CPCONLY	H01L2924/2011		160
H01L2924/20111	10	Temperature range 450 C=&lt;T&lt;500 C, 723.15K =&lt;T&lt; 773.15K	CPCONLY	H01L2924/20111		111
H01L2924/202	9	Electromagnetic wavelength ranges [W]	CPCONLY	H01L2924/202		
H01L2924/20201	10	Gamma radiation, i.e. wavelength less than 0.01 nm	CPCONLY	H01L2924/20201		1
H01L2924/20202	10	X-ray radiation, i.e. wavelength 0.01 to 10 nm	CPCONLY	H01L2924/20202		
H01L2924/2021	10	Ultraviolet radiation	CPCONLY	H01L2924/2021		6
H01L2924/20211	11	UV-C 100=&lt;W&lt;280 nm	CPCONLY	H01L2924/20211		1
H01L2924/20212	11	UV-B 280=&lt;W&lt;315 nm	CPCONLY	H01L2924/20212		1
H01L2924/20213	11	UV-A 315=&lt;W&lt;400 nm	CPCONLY	H01L2924/20213		2
H01L2924/2024	10	Visible spectrum wavelength 390=&lt;W&lt;700 nm, i.e. 400-790 THz	CPCONLY	H01L2924/2024		7
H01L2924/2026	10	Infrared radiation 700=&lt;W&lt;3000 nm	CPCONLY	H01L2924/2026		4
H01L2924/20261	11	IR-A 700=&lt;W&lt;1400 nm, i.e. 215 THz-430 THz	CPCONLY	H01L2924/20261		2
H01L2924/20262	11	IR-B 1400=&lt;W&lt;3000 nm, i.e. 100THz-215 THz	CPCONLY	H01L2924/20262		
H01L2924/20263	11	IR-C 3000 nm =&lt;W&lt;1 mm, i.e. 300 GHz-100THz	CPCONLY	H01L2924/20263		
H01L2924/2027	10	Radio 1 mm - km 300 GHz - 3 Hz	CPCONLY	H01L2924/2027		25
H01L2924/20271	11	Microwave radiation 1 mm - 1 meter, i..e 300 GHz - 300 MHz	CPCONLY	H01L2924/20271		7
H01L2924/203	9	Ultrasonic frequency ranges, i.e. KHz	CPCONLY	H01L2924/203		37
H01L2924/20301	10	Ultrasonic frequency [f] f&lt;25 kHz	CPCONLY	H01L2924/20301		14
H01L2924/20302	10	Ultrasonic frequency [f] 25 Khz=&lt;f&lt; 50 KHz	CPCONLY	H01L2924/20302		15
H01L2924/20303	10	Ultrasonic frequency [f] 50 Khz=&lt;f&lt; 75 KHz	CPCONLY	H01L2924/20303		67
H01L2924/20304	10	Ultrasonic frequency [f] 75 Khz=&lt;f&lt; 100 KHz	CPCONLY	H01L2924/20304		34
H01L2924/20305	10	Ultrasonic frequency [f] 100 Khz=&lt;f&lt; 125 KHz	CPCONLY	H01L2924/20305		53
H01L2924/20306	10	Ultrasonic frequency [f] 125 Khz=&lt;f&lt; 150 KHz	CPCONLY	H01L2924/20306		18
H01L2924/20307	10	Ultrasonic frequency [f] 150 Khz=&lt;f&lt; 175 KHz	CPCONLY	H01L2924/20307		14
H01L2924/20308	10	Ultrasonic frequency [f] 175 Khz=&lt;f&lt; 200 KHz	CPCONLY	H01L2924/20308		9
H01L2924/20309	10	Ultrasonic frequency [f] f&gt;=200 KHz	CPCONLY	H01L2924/20309		7
H01L2924/206	9	Length ranges	CPCONLY	H01L2924/206		1201
H01L2924/2064	10	larger or equal to 1 micron less than 100 microns	CPCONLY	H01L2924/2064		255
H01L2924/20641	10	larger or equal to 100 microns less than 200 microns	CPCONLY	H01L2924/20641		79
H01L2924/20642	10	larger or equal to 200 microns less than 300 microns	CPCONLY	H01L2924/20642		46
H01L2924/20643	10	larger or equal to 300 microns less than 400 microns	CPCONLY	H01L2924/20643		34
H01L2924/20644	10	larger or equal to 400 microns less than 500 microns	CPCONLY	H01L2924/20644		26
H01L2924/20645	10	larger or equal to 500 microns less than 600 microns	CPCONLY	H01L2924/20645		28
H01L2924/20646	10	larger or equal to 600 microns less than 700 microns	CPCONLY	H01L2924/20646		11
H01L2924/20647	10	larger or equal to 700 microns less than 800 microns	CPCONLY	H01L2924/20647		12
H01L2924/20648	10	larger or equal to 800 microns less than 900 microns	CPCONLY	H01L2924/20648		11
H01L2924/20649	10	larger or equal to 900 microns less than 1000 microns	CPCONLY	H01L2924/20649		11
H01L2924/2065	10	larger or equal to 1000 microns less than 1500 microns	CPCONLY	H01L2924/2065		30
H01L2924/20651	10	larger or equal to 1500 microns less than 2000 microns	CPCONLY	H01L2924/20651		15
H01L2924/20652	10	larger or equal to 2000 microns less than 2500 microns	CPCONLY	H01L2924/20652		19
H01L2924/20653	10	larger or equal to 2500 microns less than 3000 microns	CPCONLY	H01L2924/20653		11
H01L2924/20654	10	larger or equal to 3000 microns less than 4000 microns	CPCONLY	H01L2924/20654		18
H01L2924/20655	10	larger or equal to 4000 microns less than 5000 microns	CPCONLY	H01L2924/20655		12
H01L2924/20656	10	larger or equal to 5000 microns less than 6000 microns	CPCONLY	H01L2924/20656		25
H01L2924/20657	10	larger or equal to 6000 microns less than 7000 microns	CPCONLY	H01L2924/20657		5
H01L2924/20658	10	larger or equal to 7000 microns less than 8000 microns	CPCONLY	H01L2924/20658		8
H01L2924/207	9	Diameter ranges	CPCONLY	H01L2924/207		8634
H01L2924/2075	10	larger or equal to 1 micron less than 10 microns	CPCONLY	H01L2924/2075		341
H01L2924/20751	10	larger or equal to 10 microns less than 20 microns	CPCONLY	H01L2924/20751		858
H01L2924/20752	10	larger or equal to 20 microns less than 30 microns	CPCONLY	H01L2924/20752		2016
H01L2924/20753	10	larger or equal to 30 microns less than 40 microns	CPCONLY	H01L2924/20753		1323
H01L2924/20754	10	larger or equal to 40 microns less than 50 microns	CPCONLY	H01L2924/20754		841
H01L2924/20755	10	larger or equal to 50 microns less than 60 microns	CPCONLY	H01L2924/20755		881
H01L2924/20756	10	larger or equal to 60 microns less than 70 microns	CPCONLY	H01L2924/20756		501
H01L2924/20757	10	larger or equal to 70 microns less than 80 microns	CPCONLY	H01L2924/20757		523
H01L2924/20758	10	larger or equal to 80 microns less than 90 microns	CPCONLY	H01L2924/20758		398
H01L2924/20759	10	larger or equal to 90 microns less than 100 microns	CPCONLY	H01L2924/20759		354
H01L2924/2076	10	equal to or larger than 100 microns	CPCONLY	H01L2924/2076		959
H01L2924/30	8	Technical effects	CPCONLY	H01L2924/30		
H01L2924/301	9	Electrical effects	CPCONLY	H01L2924/301		32
H01L2924/30101	10	Resistance	CPCONLY	H01L2924/30101		98
H01L2924/30105	10	Capacitance	CPCONLY	H01L2924/30105		3000
H01L2924/30107	10	Inductance	CPCONLY	H01L2924/30107		6516
H01L2924/3011	10	Impedance	CPCONLY	H01L2924/3011		10254
H01L2924/30111	11	matching	CPCONLY	H01L2924/30111		877
H01L2924/302	10	Electrostatic	CPCONLY	H01L2924/302		9
H01L2924/30201	11	Charge	CPCONLY	H01L2924/30201		4
H01L2924/30205	11	Discharge	CPCONLY	H01L2924/30205		45
H01L2924/3025	10	Electromagnetic shielding	CPCONLY	H01L2924/3025		10288
H01L2924/35	9	Mechanical effects	CPCONLY	H01L2924/35		99
H01L2924/351	10	Thermal stress	CPCONLY	H01L2924/351		5199
H01L2924/3511	11	Warping	CPCONLY	H01L2924/3511		5608
H01L2924/3512	11	Cracking	CPCONLY	H01L2924/3512		4044
H01L2924/35121	12	Peeling or delaminating	CPCONLY	H01L2924/35121		743
H01L2924/36	9	Material effects	CPCONLY	H01L2924/36		7
H01L2924/364	10	Polymers	CPCONLY	H01L2924/364		18
H01L2924/3641	11	Outgassing	CPCONLY	H01L2924/3641		31
H01L2924/365	10	Metallurgical effects	CPCONLY	H01L2924/365		38
H01L2924/3651	11	Formation of intermetallics	CPCONLY	H01L2924/3651		148
H01L2924/36511	12	Purple plague	CPCONLY	H01L2924/36511		
H01L2924/3656	11	Formation of Kirkendall voids	CPCONLY	H01L2924/3656		74
H01L2924/37	9	Effects of the manufacturing process	CPCONLY	H01L2924/37		15
H01L2924/37001	10	Yield	CPCONLY	H01L2924/37001		544
H01L2924/37002	10	Shelf life	CPCONLY	H01L2924/37002		5
H01L2924/3701	10	increased through put	CPCONLY	H01L2924/3701		21
H01L2924/38	9	Effects and problems related to the device integration	CPCONLY	H01L2924/38		17
H01L2924/381	10	Pitch distance	CPCONLY	H01L2924/381		423
H01L2924/384	10	Bump effects	CPCONLY	H01L2924/384		69
H01L2924/3841	11	Solder bridging	CPCONLY	H01L2924/3841		395
H01L2924/386	10	Wire effects	CPCONLY	H01L2924/386		52
H01L2924/3861	11	Sag	CPCONLY	H01L2924/3861		22
H01L2924/3862	11	Sweep	CPCONLY	H01L2924/3862		60
H01L2924/40	8	Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body	CPCONLY	H01L2924/40		362
H01L2924/401	9	LASER	CPCONLY	H01L2924/401		45
H01L2924/40101	10	Mode	CPCONLY	H01L2924/40101		1
H01L2924/40102	11	being pulsed	CPCONLY	H01L2924/40102		8
H01L2924/40103	11	being continous	CPCONLY	H01L2924/40103		
H01L2924/40105	10	Beam details	CPCONLY	H01L2924/40105		3
H01L2924/4015	11	Shape	CPCONLY	H01L2924/4015		4
H01L2924/402	10	Type	CPCONLY	H01L2924/402		1
H01L2924/40201	11	being a chemical	CPCONLY	H01L2924/40201		
H01L2924/40202	12	Deuterium Flouride [DF] LASER	CPCONLY	H01L2924/40202		
H01L2924/40203	12	Hydrogen Flouride [HF] LASER	CPCONLY	H01L2924/40203		
H01L2924/40207	12	Dye laser	CPCONLY	H01L2924/40207		
H01L2924/4025	11	being a gas	CPCONLY	H01L2924/4025		
H01L2924/40251	12	argon-ion LASER	CPCONLY	H01L2924/40251		2
H01L2924/40252	12	CO2 LASER	CPCONLY	H01L2924/40252		10
H01L2924/40253	12	HeAg LASER	CPCONLY	H01L2924/40253		
H01L2924/40254	12	HeNe LASER	CPCONLY	H01L2924/40254		1
H01L2924/40255	12	NeCu LASER	CPCONLY	H01L2924/40255		
H01L2924/403	11	being an Excimer	CPCONLY	H01L2924/403		5
H01L2924/40301	12	ArF LASER	CPCONLY	H01L2924/40301		1
H01L2924/40302	12	F2 LASER	CPCONLY	H01L2924/40302		
H01L2924/40303	12	KrCl LASER	CPCONLY	H01L2924/40303		
H01L2924/40304	12	KrF LASER	CPCONLY	H01L2924/40304		1
H01L2924/40305	12	XeCl LASER	CPCONLY	H01L2924/40305		
H01L2924/40306	12	XeF LASER	CPCONLY	H01L2924/40306		1
H01L2924/4035	11	being a fiber hosted LASER	CPCONLY	H01L2924/4035		1
H01L2924/404	11	being a solid state	CPCONLY	H01L2924/404		6
H01L2924/40401	12	Free electron LASER	CPCONLY	H01L2924/40401		
H01L2924/40402	12	Photonic crystal LASER	CPCONLY	H01L2924/40402		1
H01L2924/40403	12	Fiber solid state LASER	CPCONLY	H01L2924/40403		1
H01L2924/40404	12	Yttrium Aluminium Garnet Nd:YAG LASER	CPCONLY	H01L2924/40404		9
H01L2924/40405	12	Yttrium Lithium Flouride Nd:YLF LASER	CPCONLY	H01L2924/40405		
H01L2924/40406	12	Ruby LASER	CPCONLY	H01L2924/40406		
H01L2924/40407	12	Yb:YAG LASER	CPCONLY	H01L2924/40407		2
H01L2924/405	10	Wavelength	CPCONLY	H01L2924/405		5
H01L2924/40501	11	UV spectrum	CPCONLY	H01L2924/40501		7
H01L2924/40502	11	Visible spectrum	CPCONLY	H01L2924/40502		
H01L2924/40503	11	IR spectrum	CPCONLY	H01L2924/40503		7
