H01L  21/00		ȾƳ֤ޤϸ֤ޤϤʤ¤ޤϽäŬѤˡޤ֡Σ<br><b><ul></ul></b><br>롼ףȣ̣ϡ롼ףȣ̣ȣ̣ͥ褹Σ	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof	65728
H01L  21/02		ȾƳ֤ޤϤʤ¤ޤϽΣ	Manufacture or treatment of semiconductor devices or of parts thereof	97774
H01L  21/027		θΥեȥ꥽եåΤȾƳΤ˥ޥΤǡ롼ףȣ̣ޤϣȣ̣ʬवʤΡΣ	Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34	130374
H01L  21/033		̵ʪؤʤΡΣ	comprising inorganic layers	6894
H01L  21/04		Ű̾ɡ㡥Уܹ硤˳ءꥢءͭ֡Σ	the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer	4371
H01L  21/18		Խʪ㡥ɡԥ󥰺ޤޤϴޤޤʤɽɣ²θǤޤϣɢɢɣ¢ֲʪȾƳΤͭ֡Σ<br><b><ul></ul></b><br>Υ롼פˤϡȤȤŪꤵƤʤƤ⡤εѤȤȤˤꡤΤɽɣ²θǡޤϣɣɣɣ¢ֲʪǤǤƤ֤¤ޤϽŬƤ뤳Ȥ餫ˡޤ֤ޤޤ롣Σ	the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or A<sub>III</sub>B<sub>V</sub> compounds with or without impurities, e.g. doping materials; <br><br><b><u>Note(s)</u></b><br><br>This group <u>covers</u> also processes and apparatus which, by using the appropriate technology, are clearly suitable for manufacture or treatment of devices whose bodies comprise elements of Group IV of the Periodic Table or A<sub>III</sub>B<sub>V</sub> compounds, even if the material used is not explicitly specified.	4608
H01L  21/20		ľؤȾƳκϽС㡥ԥĹΣ	Deposition of semiconductor materials on a substrate, e.g. epitaxial growth	34896
H01L  21/203		ʪŪϽФѤΡ㡥塤ѥå󥰡Σ	using physical deposition, e.g. vacuum deposition, sputtering	14057
H01L  21/205		ΤϽФ륬ʪδԸޤʬѤΡʤŪϽФѤΡΣ	using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition	62276
H01L  21/208		ĹѤΡΣ	using liquid deposition	9969
H01L  21/22		ȾƳΤؤΤޤȾƳΤΤޤȾƳΰ֤Խʪ㡥ɡԥ󥰺Ŷ˺γȻԽʪκʬۡ㡥ʤɡѥȤƳޤϽ򤷤ʤΡΣ	Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant	14242
H01L  21/223		꤫ΤؤΤޤϸΤ鵤ؤγȻѤΡΣ	using diffusion into, or out of, a solid from or into a gaseous phase	2596
H01L  21/225		ꡤ㡥ɡפ줿ʪءΤؤΤޤϸΤؤγȻѤΡΣ	using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer	5189
H01L  21/228		꤫ΤؤΤޤϸΤؤγȻѤΡ㡥ȻˡΣ	using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes	545
H01L  21/24		ȾƳΤԽʪ㡥ɡԥ󥰺Ŷ˺ιΣ	Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body	2339
H01L  21/26		ȤޤγҤռξȼ͡Σ	Bombardment with wave or particle radiation	5525
H01L  21/261		ǤѴȿΣ	to produce a nuclear reaction transmuting chemical elements	187
H01L  21/263		⥨ͥ륮ռͭΡʣȣ̣ͥˡΣ	with high-energy radiation(H01L21/261 takes precedence)	3253
H01L  21/265		ˡΣ	producing ion implantation	29821
H01L  21/266		ޥѤΡΣ	using masks	3953
H01L  21/268		żȡ㡥졼ѤΡΣ	using electromagnetic radiation, e.g. laser radiation	8839
H01L  21/28		롼ףȣ̣ȣ̣ʬवʤˡޤ֤ѤȾƳξؤŶˤ¤Σ	Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 to H01L21/268 	73923
H01L  21/283		ŶѤƳŤޤϽСΣ	Deposition of conductive or insulating materials for electrodes	7541
H01L  21/285		ΤޤϾϽС㡥ŷΣ	from a gas or vapour, e.g. condensation	19026
H01L  21/288		ΤϽС㡥ŲդϽСΣ	from a liquid, e.g. electrolytic deposition	7812
H01L  21/30		ȣ̣ȣ̣ʬवʤˡޤ֤ѤȾƳΤνȾƳξؤŶˤ¤ȣ̣ȣģˡΣ	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 to H01L21/26  (manufacture of electrodes thereon H01L21/28, H10D64/01)	25358
H01L  21/301		ȾƳΤ̸Ĥʤ˺ʬ䤹뤿ᡤ㡥ʬΥǣȣ̣ˡΣ	to subdivide a semiconductor body into separate parts, e.g. making partitions(cutting H01L21/304)	22012
H01L  21/302		ɽ̤ʪŪޤϷѴ뤿ᡤ㡥å󥰡ݥꥷ󥰡ǡΣ	to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting	48070
H01L  21/304		Ū㡥ࡤݥꥷ󥰡ǡΣ	Mechanical treatment, e.g. grinding, polishing, cutting	70682
H01L  21/306		ŪޤŵŪ㡥Ų򥨥å󥰡ؤηȣ̣ؤθȣ̣ˡΣ	Chemical or electrical treatment, e.g. electrolytic etching(to form insulating layers H01L21/31; after-treatment of insulating layers H01L21/3105)	38326
H01L  21/3063		Ų򥨥å󥰡Σ	Electrolytic etching	2010
H01L  21/3065		ץ饺ޥå󥰡ȿ󥨥å󥰡Σ	Plasma etching; Reactive-ion etching	57989
H01L  21/308		ޥѤΡʣȣ̣ȣ̣ͥˡΣ	using masks(H01L21/3063, H01L21/3065, take precedence)	10579
H01L  21/31		ȾƳξؤؤη㡥ޥѤޤϥեȥ꥽եåѤλѤˤΡأȣ̣ˡؤθؤΤκΣ	to form insulating layers thereon, e.g. for masking or by using photolithographic techniques(encapsulating layers H01L21/56);After-treatment of these layers; Selection of materials for these layers	38346
H01L  21/3105		Σ	After-treatment	7200
H01L  21/311		ؤΥå󥰡Σ	Etching the insulating layers	20382
H01L  21/3115		ؤΥɡԥ󥰡Σ	Doping the insulating layers	935
H01L  21/312		ͭʪء㡥եȥ쥸ȡʣȣ̣ȣ̣ͥˡΣ	Organic layers, e.g. photoresist(H01L21/3105, H01L21/32 take precedence)	9202
H01L  21/314		̵ʪءʣȣ̣ȣ̣ͥˡΣ	Inorganic layers(H01L21/3105, H01L21/32 take precedence)	6394
H01L  21/316		ʪޤϥ饹ʪޤϻʪäȤ饹ʤΡΣ	composed of oxides or glassy oxides or oxide-based glass	26652
H01L  21/318		ⲽʪʤΡΣ	composed of nitrides	8324
H01L  21/32		ޥѤΡΣ	using masks	1646
H01L  21/3205		ؤء㡥Ƴؤޤء塨ؤθŶˤ¤ȣ̣ȣģˡΣ	Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28, H10D64/01)	43401
H01L  21/321		Σ	After-treatment	8038
H01L  21/3213		ؤʪŪޤϲŪå󥰡㡥ץǥݥ󤷤ؤѥ˥ؤ뤿Σ	Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer	14441
H01L  21/3215		ؤΥɡԥ󥰡Σ	Doping the layers	606
H01L  21/322		ȾƳΤβѡ㡥ԴηΣ	to modify their internal properties, e.g. to produce internal imperfections	6039
H01L  21/324		ȾƳΤѤ뤿Ǯ㡥ˡ󥰡󥿥󥰡ʣȣ̣ȣ̣ȣ̣ȣ̣ͥˡΣ	Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L21/20 to H01L21/288 , H01L21/302 to H01L21/322  take precedence)	18706
H01L  21/326		ήޤųղá㡥쥯ȥեߥѡʣȣ̣ȣ̣ȣ̣ȣ̣ͥˡΣ	Application of electric currents or fields, e.g. for electroforming(H01L21/20 to H01L21/288 , H01L21/302 to H01L21/324  take precedence)	687
H01L  21/34		Խʪ㡥ɡԥ󥰺ޤޤϴޤޤʤ롼ףȣģȣģӣȣ̣ʬवʤȾƳΤͭ֡Σ	the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials	2431
H01L  21/36		ľؤȾƳκϽС㡥ԥĹΣ	Deposition of semiconductor materials on a substrate, e.g. epitaxial growth	2439
H01L  21/363		ʪŪϽФѤΡ㡥塤ѥå󥰡Σ	using physical deposition, e.g. vacuum deposition, sputtering	2259
H01L  21/365		ΤϽФ륬ʪδԸޤʬѤΡʤŪϽФѤΡΣ	using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition	1811
H01L  21/368		ĹѤΡΣ	using liquid deposition	1944
H01L  21/38		ȾƳΤؤΤޤȾƳΤΤޤȾƳΰ֤Խʪ㡥ɡԥ󥰺Ŷ˺γȻΣ	Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions	526
H01L  21/383		꤫ΤؤΤޤϸΤ鵤ؤγȻѤΡΣ	using diffusion into, or out of, a solid from or into a gaseous phase	169
H01L  21/385		ꡤ㡥ɡפ줿ʪءΤؤΤޤϸΤؤγȻѤΡΣ	using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer	177
H01L  21/388		꤫ΤؤΤޤϸΤؤγȻѤΡ㡥ȻˡΣ	using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes	63
H01L  21/40		ȾƳΤԽʪ㡥ɡԥ󥰺Ŷ˺ιΣ	Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body	176
H01L  21/42		ռξȼ͡Σ	Bombardment with radiation	361
H01L  21/423		⥨ͥ륮ռͭΡΣ	with high-energy radiation	77
H01L  21/425		ˡΣ	producing ion implantation	1608
H01L  21/426		ޥѤΡΣ	using masks	112
H01L  21/428		żȡ㡥졼ѤΡΣ	using electromagnetic radiation, e.g. laser radiation	330
H01L  21/44		롼ףȣ̣ȣ̣ʬवʤˡޤ֤ѤȾƳξؤŶˤ¤Σ	Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/36 to H01L21/428 	11117
H01L  21/441		ŶѤƳŤޤϽСΣ	Deposition of conductive or insulating materials for electrodes	617
H01L  21/443		ΤޤϾϽС㡥ŷΣ	from a gas or vapour, e.g. condensation	334
H01L  21/445		ΤϽС㡥ŲդϽСΣ	from a liquid, e.g. electrolytic deposition	238
H01L  21/447		ϤŬѤޤΡ㡥Ǯˡʣȣ̣ͥˡΣ	involving the application of pressure, e.g. thermo-compression bonding(H01L21/607 takes precedence)	128
H01L  21/449		Ūư㡥ĶȿưŬѤޤΡΣ	involving the application of mechanical vibrations, e.g. ultrasonic vibrations	63
H01L  21/46		ȣ̣ȣ̣ʬवʤˡޤ֤ѤȾƳΤνȾƳξؤŶˤ¤ȣ̣ȣģˡΣ	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36 to H01L21/428  (manufacture of electrodes thereon H01L21/44, H10D64/01)	1847
H01L  21/461		ɽ̤ʪŪޤϷѴ㡥å󥰡ݥꥷ󥰡ǡΣ	to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting	3746
H01L  21/463		Ū㡥ࡤĶȽΣ	Mechanical treatment, e.g. grinding, ultrasonic treatment	342
H01L  21/465		ŪޤŵŪ㡥Ų򥨥å󥰡ؤηȣ̣ˡΣ	Chemical or electrical treatment, e.g. electrolytic etching(to form insulating layers H01L21/469)	895
H01L  21/467		ޥѤΡΣ	using masks	386
H01L  21/469		ȾƳξؤؤη㡤ޥѤޤϥեȥ꥽եåѤλѤˤΡأȣ̣ˡؤθΣ	to form insulating layers thereon, e.g. for masking or by using photolithographic techniques(encapsulating layers H01L21/56);After-treatment of these layers	2228
H01L  21/47		ͭʪء㡥եȥ쥸ȡʣȣ̣ȣ̣ͥˡΣ	Organic layers, e.g. photoresist(H01L21/475, H01L21/4757 take precedence)	283
H01L  21/471		̵ʪءʣȣ̣ȣ̣ͥˡΣ	Inorganic layers(H01L21/475, H01L21/4757 take precedence)	180
H01L  21/473		ʪޤϥ饹ʪޤϻʪäȤ饹ʤΡΣ	composed of oxides or glassy oxides or oxide-based glass	239
H01L  21/475		ޥѤΡΣ	using masks	108
H01L  21/4757		Σ	After-treatment	218
H01L  21/4763		ؤء㡥Ƴءء塨ؤθŶˤ¤ȣ̣ȣģˡΣ	Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28, H10D64/01)	6706
H01L  21/477		ȾƳΤβѤΤǮ㡥ˡ󥰡󥿥󥰡ʣȣ̣ȣ̣ȣ̣ȣ̣ͥˡΣ	Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering(H01L21/36 to H01L21/449 , H01L21/461 to H01L21/475  take precedence)	1166
H01L  21/479		ήޤųղá㡥쥯ȥեߥѡʣȣ̣ȣ̣ȣ̣ȣ̣ͥˡΣ	Application of electric currents or fields, e.g. for electroforming(H01L21/36 to H01L21/449 , H01L21/461 to H01L21/477  take precedence)	276
H01L  21/48		֤ΩΩġʡ㡥ƴ¤ޤϽǤäơ֥롼ףȣ̣ݣȣ̣ޤϣȣģȣģΰĤʬवʤˡѤΡΣ	Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 to H01L21/326  or H10D48/04 to H10D48/07 	27532
H01L  21/50		֥롼ףȣ̣ݣȣ̣ޤϣȣģȣģΰĤʬवʤˡޤ֤ѤȾƳ֤ΩΣ	Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 to H01L21/326  or H10D48/04 to H10D48/07 	21157
H01L  21/52		ƴؤȾƳΤΥޥȡΣ	Mounting semiconductor bodies in containers	23143
H01L  21/54		ƴؤνŶ㡥ŶΣ	Providing fillings in containers, e.g. gas fillings	750
H01L  21/56		ȡ㡥ءʤΣ	Encapsulations, e.g. encapsulating layers, coatings	48694
H01L  21/58		ٻξؤȾƳ֤ΥޥȡΣ	Mounting semiconductor devices on supports	10251
H01L  21/60		ư֤ˤޤ֤ήήΥ꡼ɤޤ¾ƳμդΣ	Attaching leads or other conductive members, to be used for carrying current to or from the device in operation	95119
H01L  21/603		ϤŬѤޤΡ㡥Ǯʣȣ̣ͥˡΣ	involving the application of pressure, e.g. thermo-compression bonding(H01L21/607 takes precedence)	3553
H01L  21/607		ư㡥ĶȿưŬѤޤΡΣ	involving the application of mechanical vibrations, e.g. ultrasonic vibrations	3182
H01L  21/62		Ű̾ɤͭʤ֡Σ	the devices having no potential barriers	247
H01L  21/64		ȾƳְʳθ֤ޤϤʤ¤ޤϽǤäơ롼ףȣ̣ȣ̣ޤϥ֥饹ȣơȣȡȣˡȣΤʬवƤĤη֤äŬƤʤΡΣ	Manufacture or treatment of solid-state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in subclasses H10F, H10H, H10K or H10N	626
H01L  21/66		¤ޤϽλޤ¬Σ	Testing or measuring during manufacture or treatment	92617
H01L  21/67		¤ޤϽȾƳΤޤŵŪ֤μ谷äŬѤ֡ȾƳΤޤŵŪ֤⤷Ϲʤ¤ޤϽΥϤμ谷äŬѤ֡Σ	Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components	89560
H01L  21/673		äŬ礹륭ꥢѤΡΣ	using specially adapted carriers	19565
H01L  21/677		ΤΤΡ㡥ۤʤơ֤ǤΰΣ	for conveying, e.g. between different work stations	55312
H01L  21/68		ַᡤᡤޤΤΤΡΣ	for positioning, orientation or alignment	56275
H01L  21/683		ٻޤĻΤΤΡʰַᡤᡤޤΤΤΣȣ̣ˡΣ	for supporting or gripping(for positioning, orientation or alignment H01L21/68)	49445
H01L  21/687		ŪʤѤΡ㡥åסޤϥԥΣ	using mechanical means, e.g. chucks, clamps or pinches	24092
H01L  21/70		Ĥζ̴ޤϾ˷줿ʣθιʤޤϽѲϩʤ֤ޤϤʤ¤ޤϽѲϩ֤ޤϤʤ¤ͽ줿ŵŪʤʤΩΤ¤ȣˣȣˣˡΣ	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof(manufacture of assemblies consisting of preformed electrical components H05K3/00, H05K13/00)	4258
H01L  21/71		롼ףȣ̣Ǹꤵ줿֤ʤ¤ʣȣ̣ȣ̣ȣ̣ȣģͥˡΣ	Manufacture of specific parts of devices defined in group H01L21/70(H01L21/28, H01L21/44, H01L21/48 and H10D64/01 take precedence)	517
H01L  21/74		⤤Խʪǻ٤ΰ衤㡥ߥ쥯ء³ηΣ	Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections	2915
H01L  21/76		ʴ֤ʬΥΰηΣ	Making of isolation regions between components	27558
H01L  21/761		УܹΣ	PN junctions	2899
H01L  21/762		ͶΰΣ	Dielectric regions	23899
H01L  21/763		¿뾽ȾƳΰΣ	Polycrystalline semiconductor regions	1072
H01L  21/764		Σ	Air gaps	1930
H01L  21/765		ų̤ˤΡΣ	by field-effect	459
H01L  21/768		̸Ĥιʴ֤ήήѤ³ŬѤΡΣ	Applying interconnections to be used for carrying current between separate components within a device	78884
H01L  21/77		Ĥζ̴ޤϾ˷ʣθιʤޤϽѲϩʤ֤¤ޤϽŻҵ֤¤ޤϽȣ¡ˡΣ	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (manufacture or treatment of electronic memory devices H10B)	11569
H01L  21/78		ʣ̸Ĥ֤˴Ĥʬ䤹뤳ȤˤΡȾƳΤɽ̤ʪŪޤϷѤǣȣ̣ˡΣ	with subsequent division of the substrate into plural individual devices(cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304)	15260
H01L  21/98		Ĥζ̴ޤϾ˷줿ιʤʤ֤ΩѲϩ֤Ωʣȣ̣ͥˡΣ	Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices(H01L21/50 takes precedence)	2931
H01L  23/00		ȾƳΤޤ¾θ֤κʣȣ̣ͥˡΣ<br><b><ul></ul></b><br>Υ롼פϰʲΤΤޤʤ<br>ȾƳΤκޤϥ֥饹ȣĤʬव֤ŶˤκκϤΥ롼פޤ롨<br>֥饹ȣơȣȡȣˡȣΤΰĤΥ֥饹ʬव֤ͭʺκϤβսޤ롣	Details of semiconductor or other solid state devices(H01L25/00 takes precedence);<br><br><b><u>Note(s)</u></b><br><br>This group <u>does not cover</u>:details of semiconductor bodies or of electrodes of devices provided for in subclass H10D, which details are covered by that subclass;details peculiar to devices provided for in a single subclass of subclasses H10F, H10H, H10K or H10N, which details are covered by those places.	47277
H01L  23/02		ƴߡʣȣ̣ȣ̣ȣ̣ȣ̣ͥˡΣ	Containers; Seals(H01L23/12, H01L23/34, H01L23/48, H01L23/552 take precedence)	21060
H01L  23/04		ħΤΡΣ	characterised by the shape	12685
H01L  23/043		ƴ郎¤ǤꡤȾƳѥ꡼ɤʤӤ˥ޥȤȤƳĤΡΣ	the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body	921
H01L  23/045		¾Υ꡼ɤӤϩĤΡΣ	the other leads having an insulating passage through the base	478
H01L  23/047		¾Υ꡼ɤʿԤǤΡΣ	the other leads being parallel to the base	525
H01L  23/049		¾Υ꡼ɤ˿ľǤΡΣ	the other leads being perpendicular to the base	449
H01L  23/051		⤦ĤΥ꡼ɤʿԤʤĤǷΡ㡥ɥåΣ	another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type	1044
H01L  23/053		ƴ郎¤ǤꡤȾƳȤĤΡΣ	the container being a hollow construction and having an insulating base as a mounting for the semiconductor body	1511
H01L  23/055		꡼ɤӤϩĤΡΣ	the leads having a passage through the base	911
H01L  23/057		꡼ɤʿԤǤΡΣ	the leads being parallel to the base	1280
H01L  23/06		ƴκޤϤŵħΤΡΣ	characterised by the material of the container or its electrical properties	2844
H01L  23/08		ΤΤΡ㡥饹Σ	the material being an electrical insulator, e.g. glass	5175
H01L  23/10		ʴ֡㡥ƴγȴȤδ֤ޤƴΥ꡼ɤɤȤδ֡ߤκޤħΤΡΣ	characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container	8114
H01L  23/12		ޥȡ㡥ʬΥǤʤġΣ	Mountings, e.g. non-detachable insulating substrates	49380
H01L  23/13		ħΤΡΣ	characterised by the shape	8121
H01L  23/14		ޤϤŵħΤΡΣ	characterised by the material or its electrical properties	9496
H01L  23/15		ߥåޤϥ饹ġΣ	Ceramic or glass substrates	5066
H01L  23/16		ƴνŶޤࡤ㡥󥿥ʣȣ̣ȣ̣ͥˡΣ	Fillings or auxiliary members in containers, e.g. centering rings(H01L23/42, H01L23/552 take precedence)	2767
H01L  23/18		ʪŪޤϲŪޤϴǤħΤ뽼ŶΣ<br><b><ul></ul></b><br>롼ףϥ롼ף飲ͥ褹롣Σ	Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device	631
H01L  23/20		֤ư٤ǥΤΡΣ	gaseous at the normal operating temperature of the device	364
H01L  23/22		֤ư٤ǱξΤΡΣ	liquid at the normal operating temperature of the device	320
H01L  23/24		֤ư٤ǸΤޤϥΤΡΣ	solid or gel, at the normal operating temperature of the device	2035
H01L  23/26		ޤ¾ʪȿޤϵۼޤΡΣ	including materials for absorbing or reacting with moisture or other undesired substances	883
H01L  23/28		ȡ㡥ءʤʣȣ̣ͥˡΣ	Encapsulation, e.g. encapsulating layers, coatings(H01L23/552 takes precedence)	27132
H01L  23/29		ħΤΡΣ	characterised by the material	31602
H01L  23/31		ħΤΡΣ	characterised by the arrangement	56857
H01L  23/32		ưδ֤ٻٻΡʤʬΥǤʪʣȣ̣ͥˡΣ	Holders for supporting the complete device in operation, i.e. detachable fixtures(H01L23/40 takes precedence)	11191
H01L  23/34		ѡǮޤϲ֡Σ	Arrangements for cooling, heating, ventilating or temperature compensation	17872
H01L  23/36		ѤޤϲǮưפˤ뤿κޤ㡥ҡȡ󥯡Σ	Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks	22353
H01L  23/367		֤ηˤưפˤʤѡΣ	Cooling facilitated by shape of device	25260
H01L  23/373		ѺˤưפˤʤѡΣ	Cooling facilitated by selection of materials for the device	17411
H01L  23/38		ڥ̤Ѥ֡Σ	Cooling arrangements using the Peltier effect	2339
H01L  23/40		ʬΥǤѤޤϲǮ֤ΤμդޤϸʡΣ	Mountings or securing means for detachable cooling or heating arrangements	14663
H01L  23/42		ǮޤѤưפˤ뤿򤵤줿ޤ󤵤줿ƴνŶޤΣ	Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling	2587
H01L  23/427		֤Ѳˤѡ㡥ҡȥѥפλѡΣ	Cooling by change of state, e.g. use of heat pipes	9290
H01L  23/433		ηħΤࡤ㡥ԥȥΣ	Auxiliary members characterised by their shape, e.g. pistons	3166
H01L  23/44		Τʳή˿ƤΡʣȣ̣ͥˡΣ	the complete device being wholly immersed in a fluid other than air(H01L23/427 takes precedence)	1716
H01L  23/46		ήưήΤˤǮΰưˤΡʣȣ̣ȣ̣ͥˡΣ	involving the transfer of heat by flowing fluids(H01L23/42, H01L23/44 take precedence)	2916
H01L  23/467		Ρ㡥ήȤˤΡΣ	by flowing gases, e.g. air	8600
H01L  23/473		ΤήȤˤΡΣ	by flowing liquids	13041
H01L  23/48		ưθΤޤϸΤήƳ֡㡥꡼ɤޤü֡Σ	Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements	52290
H01L  23/482		ȾƳΤʬΥǤʤ褦ŬѤ줿ؤʤΡΣ	consisting of lead-in layers inseparably applied to the semiconductor body	4197
H01L  23/485		Ƴؤؤޤع¤ʤΡ㡥ʿΣ	consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts	10849
H01L  23/488		ϥդ¤ޤϷ繽¤ʤΡΣ	consisting of soldered or bonded constructions	15384
H01L  23/49		˶Τ褦ʤΡΣ	wire-like	6401
H01L  23/492		ޤġΣ	Bases or plates	3230
H01L  23/495		꡼ɥե졼Σ	Lead-frames	25440
H01L  23/498		ľΥ꡼ɡΣ	Leads on insulating substrates	32653
H01L  23/50		Ѳϩѡʣȣ̣ȣ̣ͥˡΣ	for integrated circuit devices(H01L23/482 to H01L23/498  take precedence)	35405
H01L  23/52		ưΣĤιʤ¾ιʤήƳ֡Σ	Arrangements for conducting electric current within the device in operation from one component to another	35637
H01L  23/522		ȾƳξʬΥǤʤ褦˷줿Ƴصڤؤ¿ع¤ʤ볰³ޤΡΣ	including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body	36342
H01L  23/525		ŬѤǤ³ͭΡΣ	with adaptable interconnections	4900
H01L  23/528		³¤Υ쥤ȡΣ	Layout of the interconnection structure	15525
H01L  23/532		ħΤΡΣ	characterised by the materials	13924
H01L  23/535		³ޤΡ㡥¤Σ	including internal interconnections, e.g. cross-under constructions	3954
H01L  23/538		Ĥξޤ˷ʣȾƳΥå״֤³¤Σ	the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates	16914
H01L  23/544		ȾƳ֤ŬѤɸ㡥ϿɸƥȥѥΣ	Marks applied to semiconductor devices, e.g. registration marks, test patterns	11653
H01L  23/552		͡㡥ݸΣ	Protection against radiation, e.g. light	7464
H01L  23/556		եݸΣ	against alpha rays	479
H01L  23/58		¾ʬवʤȾƳѹ¤ŪŵŪ֡Σ	Structural electrical arrangements for semiconductor devices not otherwise provided for	8411
H01L  23/60		Ų٤ޤŤݸ㡥եǡɡΣ	Protection against electrostatic charges or discharges, e.g. Faraday shields	7153
H01L  23/62		ήޤϲ٤ݸ㡥ҥ塼ʬϩΣ	Protection against overcurrent or overload, e.g. fuses, shunts	3843
H01L  23/64		ԡ֡Σ	Impedance arrangements	5576
H01L  23/66		ŬѡΣ	High-frequency adaptations	6305
H01L  25/00		ʣθġȾƳΤޤ¾θ֤ʤΩΡʣĤζ̴ޤϾ˷줿ʣθιʤʤ֣ȣģť⥸塼ޤϸǻҤΥ쥤ȣƣˡΣ	Assemblies consisting of a plurality of individual semiconductor or other solid-state devices  (devices consisting of a plurality of solid-state components formed in or on a common substrate H10D89/00;   photovoltaic modules or arrays of photovoltaic cells H10F19/00)	17212
H01L  25/03		٤Ƥ֤֥饹ȣ¡ȣġȣơȣȡȣˡȣΤΡƱ֥롼פʬव뷿ʤΡ㡥ήɤΩΡΣ	all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes	1430
H01L  25/04		̤ƴʤ֡Σ	the devices not having separate containers	8781
H01L  25/065		֤롼ףȣģʬव줿ʤΡΣ	the devices being of a type provided for in group H10D89/00	23656
H01L  25/07		֤֥饹ȣĤʬव줿ʤΡΣ	the devices being of a type provided for in subclass H10D	25175
H01L  25/075		֤֥饹ȣȣʬव줿ʤΡΣ	the devices being of a type provided for in group H10H20/00	21785
H01L  25/10		̤ƴ֡Σ	the devices having separate containers	6820
H01L  25/11		֤֥饹ȣĤʬव줿ʤΡΣ	the devices being of a type provided for in subclass H10D	4224
H01L  25/13		֤֥饹ȣȣʬव줿ʤΡΣ	the devices being of a type provided for in group H10H20/00	1730
H01L  25/16		֤֥饹ȣ¡ȣġȣơȣȡȣˡȣΤΡİʾΰۤʤᥤ󥰥롼פʬव뷿ʤΡ㡥ϥ֥åɲϩηΣ	the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits	17213
H01L  25/18		֤֥饹ȣ¡ȣġȣơȣȡȣˡȣΤΡƱᥤ󥰥롼פΣİʾΰۤʤ륵֥饹ʬव뷿ʤΡΣ	the devices being of types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N	29166
