C30B1/00	7	Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00)	C30B1/00	C30B1/00		183
C30B1/02	8	by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)	C30B1/02	C30B1/02		686
C30B1/023	9	{from solids with amorphous structure}	C30B1/02	C30B1/02		275
C30B1/026	9	{Solid phase epitaxial growth through a disordered intermediate layer}	C30B1/02	C30B1/02		21
C30B1/04	9	Isothermal recrystallisation	C30B1/04	C30B1/04		63
C30B1/06	9	Recrystallisation under a temperature gradient	C30B1/06	C30B1/06		28
C30B1/08	10	Zone recrystallisation	C30B1/08	C30B1/08		37
C30B1/10	8	by solid state reactions or multi-phase diffusion	C30B1/10	C30B1/10		688
C30B1/12	8	by pressure treatment during the growth	C30B1/12	C30B1/12		221
C30B3/00	7	Unidirectional demixing of eutectoid materials	C30B3/00	C30B3/00		10
C30B5/00	7	Single-crystal growth from gels (under a protective fluid C30B27/00)	C30B5/00	C30B5/00		190
C30B5/02	8	with addition of doping materials	C30B5/02	C30B5/02		12
C30B7/00	7	Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00)	C30B7/00	C30B7/00		1504
C30B7/005	8	{Epitaxial layer growth}	C30B7/00	C30B7/00		277
C30B7/02	8	by evaporation of the solvent	C30B7/02	C30B7/02		117
C30B7/04	9	using aqueous solvents	C30B7/04	C30B7/04		166
C30B7/06	9	using non-aqueous solvents	C30B7/06	C30B7/06		245
C30B7/08	8	by cooling of the solution	C30B7/08	C30B7/08		320
C30B7/10	8	by application of pressure, e.g. hydrothermal processes	C30B7/10	C30B7/10		806
C30B7/105	9	{using ammonia as solvent, i.e. ammonothermal processes}	C30B7/10	C30B7/10		172
C30B7/12	8	by electrolysis	C30B7/12	C30B7/12		113
C30B7/14	8	the crystallising materials being formed by chemical reactions in the solution	C30B7/14	C30B7/14		1527
C30B9/00	7	Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00)	C30B9/00	C30B9/00		544
C30B9/02	8	by evaporation of the molten solvent	C30B9/02	C30B9/02		17
C30B9/04	8	by cooling of the solution	C30B9/04	C30B9/04		52
C30B9/06	9	using as solvent a component of the crystal composition	C30B9/06	C30B9/06		161
C30B9/08	9	using other solvents	C30B9/08	C30B9/08		28
C30B9/10	10	Metal solvents	C30B9/10	C30B9/10		214
C30B9/12	10	Salt solvents, e.g. flux growth	C30B9/12	C30B9/12		524
C30B9/14	8	by electrolysis	C30B9/14	C30B9/14		27
C30B11/00	7	Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00)	C30B11/00	C30B11/00		2305
C30B11/001	8	{Continuous growth}	C30B11/00	C30B11/00		156
C30B11/002	8	{Crucibles or containers for supporting the melt}	C30B11/00	C30B11/00		986
C30B11/003	8	{Heating or cooling of the melt or the crystallised material}	C30B11/00	C30B11/00		994
C30B11/005	8	{by irradiation or electric discharge}	C30B11/00	C30B11/00		56
C30B11/006	8	{Controlling or regulating}	C30B11/00	C30B11/00		527
C30B11/007	8	{Mechanisms for moving either the charge or the heater}	C30B11/00	C30B11/00		165
C30B11/008	8	{using centrifugal force to the charge}	C30B11/00	C30B11/00		49
C30B11/02	8	without using solvents (C30B11/06 takes precedence)	C30B11/02	C30B11/02		275
C30B11/04	8	adding crystallising materials or reactants forming it in situ to the melt	C30B11/04	C30B11/04		133
C30B11/06	9	at least one but not all components of the crystal composition being added	C30B11/06	C30B11/06		92
C30B11/065	10	{before crystallising, e.g. synthesis}	C30B11/06	C30B11/06		33
C30B11/08	9	every component of the crystal composition being added during the crystallisation	C30B11/08	C30B11/08		41
C30B11/10	10	Solid or liquid components, e.g. Verneuil method	C30B11/10	C30B11/10		320
C30B11/12	10	Vaporous components, e.g. vapour-liquid-solid-growth	C30B11/12	C30B11/12		241
C30B11/14	8	characterised by the seed, e.g. its crystallographic orientation	C30B11/14	C30B11/14		447
C30B13/00	7	Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00)	C30B13/00	C30B13/00		936
C30B13/005	8	{Continuous growth}	C30B13/00	C30B13/00		47
C30B13/02	8	Zone-melting with a solvent, e.g. travelling solvent process	C30B13/02	C30B13/02		138
C30B13/04	8	Homogenisation by zone-levelling	C30B13/04	C30B13/04		20
C30B13/06	8	the molten zone not extending over the whole cross-section	C30B13/06	C30B13/06		95
C30B13/08	8	adding crystallising materials or reactants forming it in situ to the molten zone	C30B13/08	C30B13/08		68
C30B13/10	9	with addition of doping materials	C30B13/10	C30B13/10		136
C30B13/12	10	in the gaseous or vapour state	C30B13/12	C30B13/12		73
C30B13/14	8	Crucibles or vessels	C30B13/14	C30B13/14		130
C30B13/16	8	Heating of the molten zone	C30B13/16	C30B13/16		185
C30B13/18	9	the heating element being in contact with, or immersed in, the molten zone	C30B13/18	C30B13/18		39
C30B13/20	9	by induction, e.g. hot wire technique (C30B13/18 takes precedence)	C30B13/20	C30B13/20		253
C30B13/22	9	by irradiation or electric discharge	C30B13/22	C30B13/22		215
C30B13/24	10	using electromagnetic waves	C30B13/24	C30B13/24		387
C30B13/26	8	Stirring of the molten zone	C30B13/26	C30B13/26		54
C30B13/28	8	Controlling or regulating	C30B13/28	C30B13/28		262
C30B13/285	9	{Crystal holders, e.g. chucks}	C30B13/28	C30B13/28		94
C30B13/30	9	Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal	C30B13/30	C30B13/30		192
C30B13/32	8	Mechanisms for moving either the charge or the heater	C30B13/32	C30B13/32		150
C30B13/34	8	characterised by the seed, e.g. by its crystallographic orientation	C30B13/34	C30B13/34		90
C30B15/00	7	Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00)	C30B15/00	C30B15/00		3166
C30B15/002	8	{Continuous growth}	C30B15/00	C30B15/00		278
C30B15/005	8	{Simultaneous pulling of more than one crystal}	C30B15/00	C30B15/00		80
C30B15/007	8	{Pulling on a substrate}	C30B15/00	C30B15/00		171
C30B15/02	8	adding crystallising materials or reactants forming it in situ to the melt	C30B15/02	C30B15/02		861
C30B15/04	9	adding doping materials, e.g. for n-p-junction	C30B15/04	C30B15/04		775
C30B15/06	8	Non-vertical pulling	C30B15/06	C30B15/06		107
C30B15/08	8	Downward pulling	C30B15/08	C30B15/08		190
C30B15/10	8	Crucibles or containers for supporting the melt	C30B15/10	C30B15/10		1775
C30B15/12	9	Double crucible methods	C30B15/12	C30B15/12		309
C30B15/14	8	Heating of the melt or the crystallised materials	C30B15/14	C30B15/14		1568
C30B15/16	9	by irradiation or electric discharge	C30B15/16	C30B15/16		104
C30B15/18	9	using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat	C30B15/18	C30B15/18		78
C30B15/20	8	Controlling or regulating (controlling or regulating in general G05)	C30B15/20	C30B15/20		2027
C30B15/203	9	{the relationship of pull rate (v) to axial thermal gradient (G)}	C30B15/20	C30B15/20		403
C30B15/206	9	{the thermal history of growing the ingot}	C30B15/20	C30B15/20		405
C30B15/22	9	Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal	C30B15/22	C30B15/22		571
C30B15/24	10	using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34)	C30B15/24	C30B15/24		162
C30B15/26	10	using television detectors; using photo or X-ray detectors	C30B15/26	C30B15/26		367
C30B15/28	10	using weight changes of the crystal or the melt, e.g. flotation methods	C30B15/28	C30B15/28		160
C30B15/30	8	Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B15/28)	C30B15/30	C30B15/30		833
C30B15/305	9	{Stirring of the melt}	C30B15/30	C30B15/30		346
C30B15/32	8	Seed holders, e.g. chucks	C30B15/32	C30B15/32		327
C30B15/34	8	Edge-defined film-fed crystal-growth using dies or slits	C30B15/34	C30B15/34		434
C30B15/36	8	characterised by the seed, e.g. its crystallographic orientation	C30B15/36	C30B15/36		412
C30B17/00	7	Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence)	C30B17/00	C30B17/00		379
C30B19/00	7	Liquid-phase epitaxial-layer growth	C30B19/00	C30B19/00		254
C30B19/02	8	using molten solvents, e.g. flux	C30B19/02	C30B19/02		406
C30B19/04	9	the solvent being a component of the crystal composition	C30B19/04	C30B19/04		330
C30B19/06	8	Reaction chambers; Boats for supporting the melt; Substrate holders	C30B19/06	C30B19/06		133
C30B19/061	9	{Tipping system, e.g. by rotation}	C30B19/06	C30B19/06		99
C30B19/062	9	{Vertical dipping system}	C30B19/06	C30B19/06		115
C30B19/063	9	{Sliding boat system}	C30B19/06	C30B19/06		228
C30B19/064	9	{Rotating sliding boat system}	C30B19/06	C30B19/06		24
C30B19/065	9	{Multiple stacked slider system}	C30B19/06	C30B19/06		11
C30B19/066	9	{Injection or centrifugal force system}	C30B19/06	C30B19/06		23
C30B19/067	9	{Boots or containers}	C30B19/06	C30B19/06		41
C30B19/068	9	{Substrate holders}	C30B19/06	C30B19/06		100
C30B19/08	8	Heating of the reaction chamber or the substrate	C30B19/08	C30B19/08		114
C30B19/10	8	Controlling or regulating (controlling or regulating in general G05)	C30B19/10	C30B19/10		183
C30B19/103	9	{Current controlled or induced growth}	C30B19/10	C30B19/10		25
C30B19/106	9	{adding crystallising material or reactants forming it in situ to the liquid}	C30B19/10	C30B19/10		95
C30B19/12	8	characterised by the substrate	C30B19/12	C30B19/12		355
C30B21/00	7	Unidirectional solidification of eutectic materials	C30B21/00	C30B21/00		20
C30B21/02	8	by normal casting or gradient freezing	C30B21/02	C30B21/02		244
C30B21/04	8	by zone-melting	C30B21/04	C30B21/04		44
C30B21/06	8	by pulling from a melt	C30B21/06	C30B21/06		20
C30B23/00	7	Single-crystal growth by condensing evaporated or sublimed materials<br><br><u>NOTE</u><br><br>Groups C30B23/002&#160;-&#160;C30B23/005 take precedence over groups C30B23/007&#160;-&#160;C30B23/08	C30B23/00	C30B23/00		1686
C30B23/002	8	{Controlling or regulating}	C30B23/00	C30B23/00		921
C30B23/005	9	{Controlling or regulating flux or flow of depositing species or vapour}	C30B23/00	C30B23/00		208
C30B23/007	8	{Growth of whiskers or needles}	C30B23/00	C30B23/00		67
C30B23/02	8	Epitaxial-layer growth	C30B23/02	C30B23/02		1899
C30B23/025	9	{characterised by the substrate}	C30B23/02	C30B23/02		780
C30B23/04	9	Pattern deposit, e.g. by using masks	C30B23/04	C30B23/04		114
C30B23/06	9	Heating of the deposition chamber, the substrate or the materials to be evaporated	C30B23/06	C30B23/06		373
C30B23/063	10	{Heating of the substrate}	C30B23/06	C30B23/06		176
C30B23/066	10	{Heating of the material to be evaporated}	C30B23/06	C30B23/06		423
C30B23/08	9	by condensing ionised vapours (by reactive sputtering C30B25/06)	C30B23/08	C30B23/08		124
C30B25/00	7	Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth	C30B25/00	C30B25/00		1134
C30B25/005	8	{Growth of whiskers or needles}	C30B25/00	C30B25/00		536
C30B25/02	8	Epitaxial-layer growth	C30B25/02	C30B25/02		3626
C30B25/025	9	{Continuous growth}	C30B25/02	C30B25/02		93
C30B25/04	9	Pattern deposit, e.g. by using masks	C30B25/04	C30B25/04		425
C30B25/06	9	by reactive sputtering	C30B25/06	C30B25/06		130
C30B25/08	9	Reaction chambers; Selection of materials therefor	C30B25/08	C30B25/08		847
C30B25/10	9	Heating of the reaction chamber or the substrate	C30B25/10	C30B25/10		1053
C30B25/105	10	{by irradiation or electric discharge}	C30B25/10	C30B25/10		742
C30B25/12	9	Substrate holders or susceptors	C30B25/12	C30B25/12		1420
C30B25/14	9	Feed and outlet means for the gases; Modifying the flow of the reactive gases	C30B25/14	C30B25/14		2133
C30B25/16	9	Controlling or regulating (controlling or regulating in general G05)	C30B25/16	C30B25/16		1228
C30B25/165	10	{the flow of the reactive gases}	C30B25/16	C30B25/16		618
C30B25/18	9	characterised by the substrate	C30B25/18	C30B25/18		1651
C30B25/183	10	{being provided with a buffer layer, e.g. a lattice matching layer}	C30B25/18	C30B25/18		1033
C30B25/186	10	{being specially pre-treated by, e.g. chemical or physical means}	C30B25/18	C30B25/18		1124
C30B25/20	10	the substrate being of the same materials as the epitaxial layer	C30B25/20	C30B25/20		812
C30B25/205	11	{the substrate being of insulating material}	C30B25/20	C30B25/20		187
C30B25/22	9	Sandwich processes	C30B25/22	C30B25/22		104
C30B27/00	7	Single-crystal growth under a protective fluid	C30B27/00	C30B27/00		152
C30B27/02	8	by pulling from a melt	C30B27/02	C30B27/02		403
C30B28/00	7	Production of homogeneous polycrystalline material with defined structure	C30B28/00	C30B28/00		56
C30B28/02	8	directly from the solid state	C30B28/02	C30B28/02		347
C30B28/04	8	from liquids	C30B28/04	C30B28/04		285
C30B28/06	9	by normal freezing or freezing under temperature gradient	C30B28/06	C30B28/06		930
C30B28/08	9	by zone-melting	C30B28/08	C30B28/08		72
C30B28/10	9	by pulling from a melt	C30B28/10	C30B28/10		144
C30B28/12	8	directly from the gas state	C30B28/12	C30B28/12		144
C30B28/14	9	by chemical reaction of reactive gases	C30B28/14	C30B28/14		437
C30B29/00	7	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape<br><br><u>NOTE</u><br><br>In groups C30B29/02 - C30B29/54, the last place priority rule is applied, i.e. at each hierarchical level, in the absence of an indication to the contrary, a material is classified in the last appropriate place.<br>Attention is drawn to Note (3) after the title of section C, which Note indicates to which version of the Periodic Table of chemical elements the CPC refers. In this group, the system used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder.	C30B29/00	C30B29/00		87
C30B29/02	8	Elements	C30B29/02	C30B29/02		1335
C30B29/04	9	Diamond	C30B29/04	C30B29/04		1860
C30B29/06	9	Silicon	C30B29/06	C30B29/06		9784
C30B29/08	9	Germanium	C30B29/08	C30B29/08		470
C30B29/10	8	Inorganic compounds or compositions	C30B29/10	C30B29/10		941
C30B29/12	9	Halides	C30B29/12	C30B29/12		1368
C30B29/14	9	Phosphates	C30B29/14	C30B29/14		296
C30B29/16	9	Oxides	C30B29/16	C30B29/16		1901
C30B29/18	10	Quartz	C30B29/18	C30B29/18		219
C30B29/20	10	Aluminium oxides	C30B29/20	C30B29/20		1195
C30B29/22	10	Complex oxides	C30B29/22	C30B29/22		1987
C30B29/225	11	{based on rare earth copper oxides, e.g. high T-superconductors}	C30B29/22	C30B29/22		296
C30B29/24	11	with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites	C30B29/24	C30B29/24		139
C30B29/26	11	with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al	C30B29/26	C30B29/26		393
C30B29/28	11	with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets	C30B29/28	C30B29/28		601
C30B29/30	11	Niobates; Vanadates; Tantalates	C30B29/30	C30B29/30		688
C30B29/32	11	Titanates; Germanates; Molybdates; Tungstates	C30B29/32	C30B29/32		606
C30B29/34	9	Silicates	C30B29/34	C30B29/34		381
C30B29/36	9	Carbides	C30B29/36	C30B29/36		4363
C30B29/38	9	Nitrides	C30B29/38	C30B29/38		950
C30B29/40	9	AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}	C30B29/40	C30B29/40		1749
C30B29/403	10	{AIII-nitrides}	C30B29/40	C30B29/40		2288
C30B29/406	11	{Gallium nitride}	C30B29/40	C30B29/40		2159
C30B29/42	10	Gallium arsenide	C30B29/42	C30B29/42		710
C30B29/44	10	Gallium phosphide	C30B29/44	C30B29/44		104
C30B29/46	9	Sulfur-, selenium- or tellurium-containing compounds	C30B29/46	C30B29/46		1620
C30B29/48	10	AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}	C30B29/48	C30B29/48		785
C30B29/50	11	Cadmium sulfide	C30B29/50	C30B29/50		41
C30B29/52	9	Alloys	C30B29/52	C30B29/52		1622
C30B29/54	8	Organic compounds	C30B29/54	C30B29/54		1051
C30B29/56	9	Tartrates	C30B29/56	C30B29/56		29
C30B29/58	9	Macromolecular compounds	C30B29/58	C30B29/58		542
C30B29/60	8	characterised by shape	C30B29/60	C30B29/60		1295
C30B29/602	9	{Nanotubes}	C30B29/60	C30B29/60		102
C30B29/605	9	{Products containing multiple oriented crystallites, e.g. columnar crystallites}	C30B29/60	C30B29/60		603
C30B29/62	9	Whiskers or needles	C30B29/62	C30B29/62		988
C30B29/64	9	Flat crystals, e.g. plates, strips or discs	C30B29/64	C30B29/64		604
C30B29/66	9	Crystals of complex geometrical shape, e.g. tubes, cylinders	C30B29/66	C30B29/66		358
C30B29/68	9	Crystals with laminate structure, e.g. "superlattices"	C30B29/68	C30B29/68		549
C30B30/00	7	Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions<br><br><u>NOTE</u><br><br>When classifying in this group, classification is also made in groups C30B1/00&#160;-&#160;C30B27/00 according to the process of crystal growth.	C30B30/00	C30B30/00		179
C30B30/02	8	using electric fields, e.g. electrolysis	C30B30/02	C30B30/02		159
C30B30/04	8	using magnetic fields	C30B30/04	C30B30/04		352
C30B30/06	8	using mechanical vibrations	C30B30/06	C30B30/06		42
C30B30/08	8	in conditions of zero-gravity or low gravity	C30B30/08	C30B30/08		76
C30B31/00	7	Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor	C30B31/00	C30B31/00		144
C30B31/02	8	by contacting with diffusion materials in the solid state	C30B31/02	C30B31/02		290
C30B31/04	8	by contacting with diffusion materials in the liquid state	C30B31/04	C30B31/04		234
C30B31/045	9	{by electrolysis}	C30B31/04	C30B31/04		2
C30B31/06	8	by contacting with diffusion material in the gaseous state	C30B31/06	C30B31/06		314
C30B31/08	9	the diffusion materials being a compound of the elements to be diffused	C30B31/08	C30B31/08		83
C30B31/10	9	Reaction chambers; Selection of materials therefor	C30B31/10	C30B31/10		246
C30B31/103	10	{Mechanisms for moving either the charge or heater}	C30B31/10	C30B31/10		65
C30B31/106	10	{Continuous processes}	C30B31/10	C30B31/10		23
C30B31/12	9	Heating of the reaction chamber	C30B31/12	C30B31/12		236
C30B31/14	9	Substrate holders or susceptors	C30B31/14	C30B31/14		254
C30B31/16	9	Feed and outlet means for the gases; Modifying the flow of the gases	C30B31/16	C30B31/16		220
C30B31/165	10	{Diffusion sources}	C30B31/16	C30B31/16		134
C30B31/18	9	Controlling or regulating	C30B31/18	C30B31/18		111
C30B31/185	10	{Pattern diffusion, e.g. by using masks}	C30B31/18	C30B31/18		33
C30B31/20	8	Doping by irradiation with electromagnetic waves or by particle radiation	C30B31/20	C30B31/20		96
C30B31/22	9	by ion-implantation	C30B31/22	C30B31/22		262
C30B33/00	7	After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)	C30B33/00	C30B33/00		2372
C30B33/005	8	{Oxydation}	C30B33/00	C30B33/00		356
C30B33/02	8	Heat treatment (C30B33/04, C30B33/06 take precedence)	C30B33/02	C30B33/02		1933
C30B33/04	8	using electric or magnetic fields or particle radiation	C30B33/04	C30B33/04		382
C30B33/06	8	Joining of crystals	C30B33/06	C30B33/06		693
C30B33/08	8	Etching	C30B33/08	C30B33/08		201
C30B33/10	9	in solutions or melts	C30B33/10	C30B33/10		1088
C30B33/12	9	in gas atmosphere or plasma	C30B33/12	C30B33/12		304
C30B35/00	7	Apparatus&#160;not otherwise provided for, specially adapted for the growth, production or after-treatment&#160;of single&#160;crystals&#160;or of a&#160;homogeneous polycrystalline material&#160;with&#160;defined structure	C30B35/00	C30B35/00		1377
C30B35/002	8	{Crucibles or containers}	C30B35/00	C30B35/00		987
C30B35/005	8	{Transport systems}	C30B35/00	C30B35/00		213
C30B35/007	8	{Apparatus for preparing, pre-treating the source material to be used for crystal growth}	C30B35/00	C30B35/00		374
