H01S1/00	7	Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range	H01S1/00	H01S1/00		178
H01S1/005	8	{using a relativistic beam of charged particles, e.g. electron cyclotron maser, gyrotron}	H01S1/00	H01S1/00		77
H01S1/02	8	solid	H01S1/02	H01S1/02		750
H01S1/04	8	liquid	H01S1/04	H01S1/04		22
H01S1/06	8	Gaseous {, i.e. beam masers}	H01S1/06	H01S1/06		218
H01S3/00	7	Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range (semiconductors lasers H01S5/00)	H01S3/00	H01S3/00		563
H01S3/0007	8	{Applications not otherwise provided for (working metals or other materials by laser beam B23K26/00; using photons to produce a reactive propulsive thrust F03H3/00; optical recording of measured values in general G01D15/14; optics in general G02B; holographic processes or apparatus G03H; optical marking or sensing of data record carriers G06K7/10&#160;-&#160;G06K7/14, G06K15/12; injection heating of plasma by laser H05H1/22; acceleration of neutral particles by electromagnetic wave pressure H05H3/04)}	H01S3/00	H01S3/00		588
H01S3/0014	8	{Monitoring arrangements not otherwise provided for (photometry G01J1/00, e.g. G01J1/4257; radiation pyrometry G01J5/00; measuring coherence of light G01J9/00; measuring wavelength of light G01J9/00, e.g. G01J9/0246; measuring optical pulses G01J11/00; calorimetrically measuring power of laser beams G01K17/003)}	H01S3/00	H01S3/00		1222
H01S3/005	8	{Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B)}	H01S3/00	H01S3/00		2497
H01S3/0057	9	{Temporal shaping, e.g. pulse compression, frequency chirping (soliton generation and propagation G02F1/3513, H01S3/063 and H01S3/108)}	H01S3/00	H01S3/00		1770
H01S3/0064	9	{Anti-reflection devices, e.g. optical isolaters (absorbing layers for marking or protecting purposes in laser working B23K26/50; magneto-optical non-reciprocal devices G02F1/093, G02F1/0955)}	H01S3/00	H01S3/00		728
H01S3/0071	9	{Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction}	H01S3/00	H01S3/00		1251
H01S3/0078	9	{Frequency filtering}	H01S3/00	H01S3/00		618
H01S3/0085	9	{Modulating the output, i.e. the laser beam is modulated outside the laser cavity}	H01S3/00	H01S3/00		1137
H01S3/0092	9	{Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity (nonlinear frequency conversion per seG02F1/35)}	H01S3/00	H01S3/00		1145
H01S3/02	8	Constructional details {(housings or packages of fibre lasers H01S3/06704)}	H01S3/02	H01S3/02		843
H01S3/022	9	{of liquid lasers}	H01S3/02	H01S3/02		225
H01S3/025	9	{of solid state lasers, e.g. housings or mountings}	H01S3/02	H01S3/02		1449
H01S3/027	10	{comprising a special atmosphere inside the housing}	H01S3/02	H01S3/02		147
H01S3/03	9	of gas laser discharge tubes	H01S3/03	H01S3/03		1031
H01S3/0305	10	{Selection of materials for the tube or the coatings thereon}	H01S3/03	H01S3/03		156
H01S3/031	10	{Metal vapour lasers, e.g. metal vapour generation}	H01S3/03	H01S3/03		451
H01S3/0315	10	{Waveguide lasers}	H01S3/03	H01S3/03		404
H01S3/032	10	for confinement of the discharge, e.g. by special features of the discharge constricting tube	H01S3/032	H01S3/032		104
H01S3/0323	11	{by special features of the discharge constricting tube, e.g. capillary}	H01S3/032	H01S3/032		201
H01S3/0326	11	{by an electromagnetic field}	H01S3/032	H01S3/032		59
H01S3/034	10	Optical devices within, or forming part of, the tube, e.g. windows, mirrors (reflectors having variable properties or positions for initial adjustment of the resonator H01S3/086)	H01S3/034	H01S3/034		790
H01S3/0343	11	{Aerodynamic windows}	H01S3/034	H01S3/034		47
H01S3/0346	11	{Protection of windows or mirrors against deleterious effects (cooling arrangements H01S3/0401)}	H01S3/034	H01S3/034		255
H01S3/036	10	Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube {(H01S3/031 takes precedence)}	H01S3/036	H01S3/036		1874
H01S3/038	10	Electrodes, e.g. special shape, configuration or composition	H01S3/038	H01S3/038		1313
H01S3/0381	11	{Anodes or particular adaptations thereof}	H01S3/038	H01S3/038		76
H01S3/0382	11	{Cathodes or particular adaptations thereof}	H01S3/038	H01S3/038		108
H01S3/0384	11	{Auxiliary electrodes, e.g. for pre-ionisation or triggering, or particular adaptations therefor}	H01S3/038	H01S3/038		120
H01S3/0385	11	{Shape}	H01S3/038	H01S3/038		276
H01S3/0387	12	{Helical shape}	H01S3/038	H01S3/038		79
H01S3/0388	11	{Compositions, materials or coatings}	H01S3/038	H01S3/038		175
H01S3/04	9	Arrangements for thermal management	H01S3/04	H01S3/04		376
H01S3/0401	10	{of optical elements being part of laser resonator, e.g. windows, mirrors, lenses}	H01S3/04	H01S3/04		436
H01S3/0402	10	{for liquid lasers}	H01S3/04	H01S3/04		25
H01S3/0404	10	{Air- or gas cooling, e.g. by dry nitrogen}	H01S3/04	H01S3/04		468
H01S3/0405	10	{Conductive cooling, e.g. by heat sinks or thermo-electric elements}	H01S3/04	H01S3/04		1095
H01S3/0407	10	{Liquid cooling, e.g. by water}	H01S3/04	H01S3/04		1377
H01S3/0408	10	{Radiative cooling, e.g. by anti-Stokes scattering in the active medium}	H01S3/04	H01S3/04		36
H01S3/041	10	for gas lasers {(H01S3/0401 takes precedence)}	H01S3/041	H01S3/041		829
H01S3/042	10	for solid state lasers {(H01S3/0401 takes precedence)}	H01S3/042	H01S3/042		2025
H01S3/05	8	Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium	H01S3/05	H01S3/05		91
H01S3/06	9	Construction or shape of active medium	H01S3/06	H01S3/06		219
H01S3/0602	10	{Crystal lasers or glass lasers (H01S3/063 takes precedence)}	H01S3/06	H01S3/06		595
H01S3/0604	11	{in the form of a plate or disc}	H01S3/06	H01S3/06		821
H01S3/0606	11	{with polygonal cross-section, e.g. slab, prism (H01S3/0604 takes precedence)}	H01S3/06	H01S3/06		642
H01S3/0608	11	{Laser crystal with a hole, e.g. a hole or bore for housing a flashlamp or a mirror}	H01S3/06	H01S3/06		68
H01S3/061	11	{with elliptical or circular cross-section and elongated shape, e.g. rod}	H01S3/06	H01S3/06		506
H01S3/0612	11	{Non-homogeneous structure (H01S3/07 takes precedence)}	H01S3/06	H01S3/06		473
H01S3/0615	11	{Shape of end-face}	H01S3/06	H01S3/06		273
H01S3/0617	11	{having a varying composition or cross-section in a specific direction}	H01S3/06	H01S3/06		150
H01S3/0619	10	{Coatings, e.g. AR, HR, passivation layer}	H01S3/06	H01S3/06		71
H01S3/0621	11	{Coatings on the end-faces, e.g. input/output surfaces of the laser light}	H01S3/06	H01S3/06		338
H01S3/0623	12	{Antireflective [AR]}	H01S3/06	H01S3/06		199
H01S3/0625	11	{Coatings on surfaces other than the end-faces}	H01S3/06	H01S3/06		180
H01S3/0627	10	{the resonator being monolithic, e.g. microlaser}	H01S3/06	H01S3/06		667
H01S3/063	10	Waveguide lasers, {i.e. whereby the dimensions of the waveguide are of the order of the light wavelength (waveguide gas lasers H01S3/0315)}	H01S3/063	H01S3/063		417
H01S3/0632	11	{Thin film lasers in which light propagates in the plane of the thin film}	H01S3/063	H01S3/063		269
H01S3/0635	12	{provided with a periodic structure, e.g. using distributed feed-back, grating couplers (controlling, e.g. modulating distributed feed-back lasers H01S3/102)}	H01S3/063	H01S3/063		178
H01S3/0637	12	{Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)}	H01S3/063	H01S3/063		219
H01S3/067	11	Fibre lasers	H01S3/067	H01S3/067		2194
H01S3/06704	12	{Housings; Packages}	H01S3/067	H01S3/067		720
H01S3/06708	12	{Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering (optical fibres as passive waveguides G02B6/02)}	H01S3/067	H01S3/067		1316
H01S3/06712	13	{Polarising fibre; Polariser}	H01S3/067	H01S3/067		736
H01S3/06716	13	{Fibre compositions (per seC03C13/04)or doping with active elements (lasing materials in general H01S3/14)}	H01S3/067	H01S3/067		1449
H01S3/0672	13	{Non-uniform radial doping}	H01S3/067	H01S3/067		144
H01S3/06725	13	{Fibre characterized by a specific dispersion, e.g. for pulse shaping in soliton lasers or for dispersion compensating [DCF]}	H01S3/067	H01S3/067		369
H01S3/06729	13	{Peculiar transverse fibre profile}	H01S3/067	H01S3/067		626
H01S3/06733	14	{Fibre having more than one cladding}	H01S3/067	H01S3/067		496
H01S3/06737	14	{Fibre having multiple non-coaxial cores, e.g. multiple active cores or separate cores for pump and gain}	H01S3/067	H01S3/067		268
H01S3/06741	14	{Photonic crystal fibre, i.e. the fibre having a photonic bandgap}	H01S3/067	H01S3/067		255
H01S3/06745	13	{Tapering of the fibre, core or active region}	H01S3/067	H01S3/067		230
H01S3/0675	12	{Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers}	H01S3/067	H01S3/067		1767
H01S3/06754	12	{Fibre amplifiers (H01S3/06708 takes precedence)}	H01S3/067	H01S3/067		3383
H01S3/06758	13	{Tandem amplifiers}	H01S3/067	H01S3/067		1191
H01S3/06762	13	{having a specific amplification band}	H01S3/067	H01S3/067		40
H01S3/06766	14	{C-band amplifiers, i.e. amplification in the range of about 1530 nm to 1560 nm}	H01S3/067	H01S3/067		179
H01S3/0677	14	{L-band amplifiers, i.e. amplification in the range of about 1560 nm to 1610 nm}	H01S3/067	H01S3/067		181
H01S3/06775	14	{S-band amplifiers, i.e. amplification in the range of about 1450 nm to 1530 nm}	H01S3/067	H01S3/067		44
H01S3/06779	13	{with optical power limiting}	H01S3/067	H01S3/067		46
H01S3/06783	13	{Amplifying coupler}	H01S3/067	H01S3/067		159
H01S3/06787	13	{Bidirectional amplifier}	H01S3/067	H01S3/067		122
H01S3/06791	12	{Fibre ring lasers (fibre laser gyrometers G01C19/72)}	H01S3/067	H01S3/067		1136
H01S3/06795	12	{with superfluorescent emission, e.g. amplified spontaneous emission sources for fibre laser gyrometers (fibre laser gyrometers per seG01C19/72)}	H01S3/067	H01S3/067		145
H01S3/07	10	consisting of a plurality of parts, e.g. segments (H01S3/067 takes precedence)	H01S3/07	H01S3/07		711
H01S3/073	11	{Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers (tandem arrangements of separate gas lasers H01S3/2366)}	H01S3/07	H01S3/07		126
H01S3/076	12	{Folded-path lasers}	H01S3/07	H01S3/07		286
H01S3/08	9	Construction or shape of optical resonators or components thereof	H01S3/08	H01S3/08		1300
H01S3/08004	10	{incorporating a dispersive element, e.g. a prism for wavelength selection (H01S3/0811, H01S3/08022 take precedence)}	H01S3/08	H01S3/08		526
H01S3/08009	11	{using a diffraction grating}	H01S3/08	H01S3/08		607
H01S3/08013	10	{Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate (the active medium being a fibre H01S3/067)}	H01S3/08	H01S3/08		424
H01S3/08018	10	Mode suppression	H01S3/08018	H01S3/08018		118
H01S3/08022	11	Longitudinal modes (mode suppression using a plurality of resonators H01S3/082)	H01S3/08022	H01S3/08022		128
H01S3/08027	12	{by a filter, e.g. a Fabry-Perot filter is used for wavelength setting}	H01S3/08022	H01S3/08		308
H01S3/08031	12	Single-mode emission	H01S3/08031	H01S3/08031		281
H01S3/08036	13	using intracavity dispersive, polarising or birefringent elements	H01S3/08036	H01S3/08036		324
H01S3/0804	11	Transverse or lateral modes	H01S3/0804	H01S3/0804		206
H01S3/08045	12	Single-mode emission	H01S3/08045	H01S3/08045		275
H01S3/0805	12	by apertures, e.g. pin-holes or knife-edges	H01S3/0805	H01S3/0805		337
H01S3/08054	10	{Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation (quarter-wave plates in a Q-switch laser H01S3/1124, H01S3/115)}	H01S3/08	H01S3/0805		455
H01S3/08059	10	{Constructional details of the reflector, e.g. shape (mirrors in general G02B5/08; mountings for mirrors G02B7/18)}	H01S3/08	H01S3/0805		1346
H01S3/08063	11	{Graded reflectivity, e.g. variable reflectivity mirror}	H01S3/08	H01S3/08		137
H01S3/08068	11	{Holes; Stepped surface; Special cross-section}	H01S3/08	H01S3/08		190
H01S3/08072	10	{Thermal lensing or thermally induced birefringence; Compensation thereof}	H01S3/08	H01S3/08		576
H01S3/08077	11	{Pump induced waveguiding, i.e. the pump induces refractive index change in the laser medium to guide the amplified light, e.g. gain- or loss- guiding or thermally induced refractive index change}	H01S3/08	H01S3/08		22
H01S3/08081	10	{Unstable resonators}	H01S3/08	H01S3/08		255
H01S3/08086	10	{Multiple-wavelength emission}	H01S3/08	H01S3/08		665
H01S3/0809	11	{Two-wavelenghth emission}	H01S3/08	H01S3/08		376
H01S3/08095	10	{Zig-zag travelling beam through the active medium}	H01S3/08	H01S3/08		313
H01S3/081	10	comprising three or more reflectors	H01S3/081	H01S3/081		483
H01S3/0811	11	{incorporating a dispersive element, e.g. a prism for wavelength selection}	H01S3/081	H01S3/081		177
H01S3/0812	12	{using a diffraction grating}	H01S3/081	H01S3/081		165
H01S3/0813	11	{Configuration of resonator}	H01S3/081	H01S3/081		359
H01S3/0815	12	{having 3 reflectors, e.g. V-shaped resonators}	H01S3/081	H01S3/081		338
H01S3/0816	12	{having 4 reflectors, e.g. Z-shaped resonators}	H01S3/081	H01S3/081		318
H01S3/0817	12	{having 5 reflectors, e.g. W-shaped resonators}	H01S3/081	H01S3/081		94
H01S3/0818	11	{Unstable resonators}	H01S3/081	H01S3/081		138
H01S3/082	11	defining a plurality of resonators, e.g. for mode selection or suppression	H01S3/082	H01S3/082		633
H01S3/0823	12	{incorporating a dispersive element, e.g. a prism for wavelength selection}	H01S3/082	H01S3/082		73
H01S3/0826	13	{using a diffraction grating}	H01S3/082	H01S3/082		121
H01S3/083	11	Ring lasers {(fibre ring lasers H01S3/06791)}	H01S3/083	H01S3/083		1197
H01S3/0835	12	{Gas ring lasers}	H01S3/083	H01S3/083		146
H01S3/086	10	One or more reflectors having variable properties or positions for initial adjustment of the resonator (varying a parameter of the laser output during operation H01S3/10; stabilisation of the laser output H01S3/13)	H01S3/086	H01S3/086		500
H01S3/09	8	Processes or apparatus for excitation, e.g. pumping	H01S3/09	H01S3/09		427
H01S3/0903	9	{Free-electron laser}	H01S3/09	H01S3/09		319
H01S3/0906	9	{Electrical, electrochemical, or electron-beam pumping of a dye laser}	H01S3/09	H01S3/09		30
H01S3/091	9	using optical pumping	H01S3/091	H01S3/091		512
H01S3/0912	10	{Electronics or drivers for the pump source, i.e. details of drivers or circuitry specific for laser pumping (laser diode drivers H01S5/042)}	H01S3/091	H01S3/091		302
H01S3/0915	10	by incoherent light	H01S3/0915	H01S3/0915		160
H01S3/09155	11	{by cathodo-luminescence}	H01S3/0915	H01S3/0915		13
H01S3/092	11	of flash lamp (H01S3/0937 takes precedence {; flash lamps per seH01J61/80; circuit arrangements for operating flash lamps in general H05B41/30})	H01S3/092	H01S3/092		564
H01S3/093	12	focusing or directing the excitation energy into the active medium	H01S3/093	H01S3/093		538
H01S3/0931	13	{Imaging pump cavity, e.g. elliptical}	H01S3/093	H01S3/093		193
H01S3/0933	11	of a semiconductor, e.g. light emitting diode	H01S3/0933	H01S3/0933		305
H01S3/0937	11	produced by exploding or combustible material	H01S3/0937	H01S3/0937		23
H01S3/094	10	by coherent light<br><br><u>NOTE</u><br><br> Groups H01S3/094003&#160;-&#160;H01S3/094088 take precedence over groups H01S3/0941&#160;-&#160;H01S3/0947	H01S3/094	H01S3/094		580
H01S3/094003	11	{the pumped medium being a fibre}	H01S3/094	H01S3/094		1553
H01S3/094007	12	{Cladding pumping, i.e. pump light propagating in a clad surrounding the active core}	H01S3/094	H01S3/094		659
H01S3/094011	12	{with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre}	H01S3/094	H01S3/094		485
H01S3/094015	12	{with pump light recycling, i.e. with reinjection of the unused pump light back into the fiber, e.g. by reflectors or circulators}	H01S3/094	H01S3/094		205
H01S3/094019	12	{Side pumped fibre, whereby pump light is coupled laterally into the fibre via an optical component like a prism, or a grating, or via V-groove coupling}	H01S3/094	H01S3/094		272
H01S3/094023	12	{with ASE light recycling, with reinjection of the ASE light back into the fiber, e.g. by reflectors or circulators}	H01S3/094	H01S3/094		71
H01S3/094026	11	{for synchronously pumping, e.g. for mode locking}	H01S3/094	H01S3/094		103
H01S3/09403	11	{Cross-pumping, e.g. F&#246;rster process involving intermediate medium for excitation transfer}	H01S3/094	H01S3/094		59
H01S3/094034	11	{the pumped medium being a dye}	H01S3/094	H01S3/094		157
H01S3/094038	11	{End pumping}	H01S3/094	H01S3/094		423
H01S3/094042	11	{of a fibre laser}	H01S3/094	H01S3/094		503
H01S3/094046	12	{of a Raman fibre laser}	H01S3/094	H01S3/094		193
H01S3/094049	11	{Guiding of the pump light}	H01S3/094	H01S3/094		216
H01S3/094053	12	{Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle}	H01S3/094	H01S3/094		748
H01S3/094057	12	{by tapered duct or homogenized light pipe, e.g. for concentrating pump light}	H01S3/094	H01S3/094		186
H01S3/094061	11	{Shared pump, i.e. pump light of a single pump source is used to pump plural gain media in parallel}	H01S3/094	H01S3/094		246
H01S3/094065	11	{Single-mode pumping}	H01S3/094	H01S3/094		53
H01S3/094069	11	{Multi-mode pumping}	H01S3/094	H01S3/094		219
H01S3/094073	11	{Non-polarized pump, e.g. depolarizing the pump light for Raman lasers}	H01S3/094	H01S3/094		52
H01S3/094076	11	{Pulsed or modulated pumping (H01S3/1024 takes precedence)}	H01S3/094	H01S3/094		547
H01S3/09408	11	{Pump redundancy}	H01S3/094	H01S3/094		489
H01S3/094084	11	{with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators}	H01S3/094	H01S3/094		431
H01S3/094088	11	{with ASE light recycling, i.e. with reinjection of the ASE light, e.g. by reflectors or circulators}	H01S3/094	H01S3/094		11
H01S3/094092	11	{Upconversion pumping}	H01S3/094	H01S3/094		116
H01S3/094096	11	{Multi-wavelength pumping}	H01S3/094	H01S3/094		533
H01S3/0941	11	of a laser diode	H01S3/0941	H01S3/0941		2319
H01S3/09415	12	{the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping}	H01S3/0941	H01S3/0941		2315
H01S3/0943	11	of a gas laser	H01S3/0943	H01S3/0943		79
H01S3/0947	11	of an organic dye laser	H01S3/0947	H01S3/0947		28
H01S3/095	9	using chemical or thermal pumping	H01S3/095	H01S3/095		239
H01S3/09505	10	{involving photochemical reactions, e.g. photodissociation (iodine lasers H01S3/2215)}	H01S3/095	H01S3/095		42
H01S3/0951	10	by increasing the pressure in the laser gas medium	H01S3/0951	H01S3/0951		4
H01S3/0953	11	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds	H01S3/0953	H01S3/0953		190
H01S3/0955	9	using pumping by high energy particles {(H01S3/0903, H01S3/0906, H01S3/09707 take precedence)}	H01S3/0955	H01S3/0955		13
H01S3/0957	10	by high energy nuclear particles	H01S3/0957	H01S3/0957		13
H01S3/0959	10	by an electron beam	H01S3/0959	H01S3/0959		104
H01S3/097	9	by gas discharge of a gas laser	H01S3/097	H01S3/097		716
H01S3/09702	10	{Details of the driver electronics and electric discharge circuits}	H01S3/097	H01S3/097		261
H01S3/09705	10	{with particular means for stabilising the discharge}	H01S3/097	H01S3/097		184
H01S3/09707	10	{using an electron or ion beam (free-electron laser H01S3/0903)}	H01S3/097	H01S3/097		102
H01S3/0971	10	transversely excited (H01S3/0975 takes precedence)	H01S3/0971	H01S3/0971		562
H01S3/09713	11	{with auxiliary ionisation, e.g. double discharge excitation}	H01S3/0971	H01S3/0971		220
H01S3/09716	12	{by ionising radiation}	H01S3/0971	H01S3/0971		113
H01S3/0973	11	having a travelling wave passing through the active medium	H01S3/0973	H01S3/0973		78
H01S3/0975	10	using inductive or capacitive excitation	H01S3/0975	H01S3/0975		666
H01S3/0977	10	having auxiliary ionisation means {(H01S3/09713 takes precedence)}	H01S3/0977	H01S3/0977		59
H01S3/09775	11	{by ionising radiation}	H01S3/0977	H01S3/0977		21
H01S3/0979	10	Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds	H01S3/0979	H01S3/0979		135
H01S3/10	8	Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating<br><br><u>NOTE</u><br><br> Group H01S3/10007 takes precedence over groups H01S3/102&#160;-&#160;H01S3/104	H01S3/10	H01S3/10		1611
H01S3/10007	9	{in optical amplifiers}	H01S3/10	H01S3/10		401
H01S3/1001	10	{by controlling the optical pumping}	H01S3/10	H01S3/10		382
H01S3/10013	10	{by controlling the temperature of the active medium}	H01S3/10	H01S3/10		56
H01S3/10015	10	{by monitoring or controlling, e.g. attenuating, the input signal}	H01S3/10	H01S3/10		760
H01S3/10023	10	{by functional association of additional optical elements, e.g. filters, gratings, reflectors}	H01S3/10	H01S3/10		711
H01S3/1003	11	{tunable optical elements, e.g. acousto-optic filters, tunable gratings}	H01S3/10	H01S3/10		364
H01S3/10038	9	{Amplitude control}	H01S3/10	H01S3/10		283
H01S3/10046	10	{Pulse repetition rate control (H01S3/11 takes precedence)}	H01S3/10	H01S3/10		334
H01S3/10053	9	{Phase control}	H01S3/10	H01S3/10		637
H01S3/10061	9	{Polarization control}	H01S3/10	H01S3/10		953
H01S3/10069	9	{Memorized or pre-programmed characteristics, e.g. look-up table [LUT]}	H01S3/10	H01S3/10		406
H01S3/10076	9	{using optical phase conjugation, e.g. phase conjugate reflection}	H01S3/10	H01S3/10		180
H01S3/10084	9	{Frequency control by seeding}	H01S3/10	H01S3/10		197
H01S3/10092	10	{Coherent seed, e.g. injection locking}	H01S3/10	H01S3/10		434
H01S3/101	9	Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted	H01S3/101	H01S3/101		669
H01S3/102	9	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation (H01S3/13 takes precedence)	H01S3/102	H01S3/102		356
H01S3/1022	10	{by controlling the optical pumping}	H01S3/102	H01S3/102		526
H01S3/1024	11	{for pulse generation}	H01S3/102	H01S3/102		398
H01S3/1026	10	{Controlling the active medium by translation or rotation, e.g. to remove heat from that part of the active medium that is situated on the resonator axis}	H01S3/102	H01S3/102		122
H01S3/1028	10	{by controlling the temperature}	H01S3/102	H01S3/102		200
H01S3/104	10	in gas lasers	H01S3/104	H01S3/104		368
H01S3/105	9	by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}({H01S3/10076}, H01S3/13 take precedence)	H01S3/105	H01S3/105		944
H01S3/1051	10	{one of the reflectors being of the type using frustrated reflection}	H01S3/105	H01S3/105		39
H01S3/1053	10	{Control by pressure or deformation}	H01S3/105	H01S3/105		92
H01S3/1055	10	one of the reflectors being constituted by a diffraction grating	H01S3/1055	H01S3/1055		562
H01S3/106	9	by controlling devices placed within the cavity ({H01S3/10076,}H01S3/13 take precedence)	H01S3/106	H01S3/106		714
H01S3/1061	10	{using a variable absorption device}	H01S3/106	H01S3/106		189
H01S3/1062	10	{using a controlled passive interferometer, e.g. a Fabry-Perot etalon}	H01S3/106	H01S3/106		488
H01S3/1063	10	{using a solid state device provided with at least one potential jump barrier}	H01S3/106	H01S3/106		25
H01S3/1065	10	{using liquid crystals}	H01S3/106	H01S3/106		67
H01S3/1066	10	{using a magneto-optical device}	H01S3/106	H01S3/106		84
H01S3/1067	10	{using pressure or deformation}	H01S3/106	H01S3/106		87
H01S3/1068	10	{using an acousto-optical device}	H01S3/106	H01S3/106		393
H01S3/107	10	using electro-optic devices, e.g. exhibiting Pockels or Kerr effect {(H01S3/1061, H01S3/1063, H01S3/1065 take precedence)}	H01S3/107	H01S3/107		563
H01S3/1075	11	{for optical deflection}	H01S3/107	H01S3/107		102
H01S3/108	10	using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering {(mode locking using a non-linear element H01S3/1112)}	H01S3/108	H01S3/108		616
H01S3/1083	11	{using parametric generation}	H01S3/108	H01S3/108		633
H01S3/1086	11	{using scattering effects, e.g. Raman or Brillouin effect}	H01S3/108	H01S3/108		292
H01S3/109	11	Frequency multiplication, e.g. harmonic generation	H01S3/109	H01S3/109		2140
H01S3/1095	12	{self doubling, e.g. lasing and frequency doubling by the same active medium}	H01S3/109	H01S3/109		112
H01S3/11	9	Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping	H01S3/11	H01S3/11		456
H01S3/1103	10	{Cavity dumping}	H01S3/11	H01S3/11		123
H01S3/1106	10	Mode locking	H01S3/1106	H01S3/1106		486
H01S3/1109	11	Active mode locking	H01S3/1109	H01S3/1109		397
H01S3/1112	11	Passive mode locking	H01S3/1112	H01S3/1112		411
H01S3/1115	12	using intracavity saturable absorbers	H01S3/1115	H01S3/1115		494
H01S3/1118	13	Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based	H01S3/1118	H01S3/1118		754
H01S3/1121	11	{Harmonically mode locking lasers, e.g. modulation frequency equals multiple integers or a fraction of the resonator roundtrip time}	H01S3/1106	H01S3/11		104
H01S3/1123	10	Q-switching	H01S3/1123	H01S3/1123		308
H01S3/1124	11	{using magneto-optical devices}	H01S3/1123	H01S3/11		29
H01S3/1127	11	{using pulse transmission mode [PTM]}	H01S3/1123	H01S3/11		71
H01S3/113	11	using intracavity saturable absorbers	H01S3/113	H01S3/113		691
H01S3/115	11	using intracavity electro-optic devices	H01S3/115	H01S3/115		840
H01S3/117	11	using intracavity acousto-optic devices	H01S3/117	H01S3/117		552
H01S3/121	11	using intracavity mechanical devices	H01S3/121	H01S3/121		122
H01S3/123	12	using rotating mirrors	H01S3/123	H01S3/123		88
H01S3/125	12	using rotating prisms	H01S3/125	H01S3/125		70
H01S3/127	11	Plural Q-switches	H01S3/127	H01S3/127		107
H01S3/13	9	Stabilisation of laser output parameters, e.g. frequency or amplitude<br><br><u>NOTE</u><br><br> Group H01S3/1301 takes precedence over groups H01S3/131&#160;-&#160;H01S3/134	H01S3/13	H01S3/13		607
H01S3/1301	10	{in optical amplifiers}	H01S3/13	H01S3/13		331
H01S3/13013	11	{by controlling the optical pumping}	H01S3/13	H01S3/13		569
H01S3/13017	11	{by controlling the temperature of the active medium}	H01S3/13	H01S3/13		35
H01S3/1302	11	{by all-optical means, e.g. gain-clamping}	H01S3/13	H01S3/13		126
H01S3/1303	10	{by using a passive reference, e.g. absorption cell (H01S3/139 takes precedence)}	H01S3/13	H01S3/13		169
H01S3/1304	10	{by using an active reference, e.g. second laser, klystron or other standard frequency source (H01S3/139 takes precedence; automatic control of electronic generators H03L7/00)}	H01S3/13	H01S3/13		143
H01S3/1305	10	{Feedback control systems}	H01S3/13	H01S3/13		1619
H01S3/1306	10	{Stabilisation of the amplitude}	H01S3/13	H01S3/13		206
H01S3/1307	10	{Stabilisation of the phase}	H01S3/13	H01S3/13		436
H01S3/1308	10	{Stabilisation of the polarisation}	H01S3/13	H01S3/13		58
H01S3/131	10	by controlling the active medium, e.g. by controlling the processes or apparatus for excitation	H01S3/131	H01S3/131		232
H01S3/1312	11	{by controlling the optical pumping}	H01S3/131	H01S3/131		509
H01S3/1315	11	{by gain saturation}	H01S3/131	H01S3/131		23
H01S3/1317	11	{by controlling the temperature}	H01S3/131	H01S3/131		214
H01S3/134	11	in gas lasers	H01S3/134	H01S3/134		576
H01S3/136	10	by controlling devices placed within the cavity	H01S3/136	H01S3/136		283
H01S3/137	11	for stabilising of frequency	H01S3/137	H01S3/137		617
H01S3/139	10	by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}	H01S3/139	H01S3/139		553
H01S3/1392	11	{by using a passive reference, e.g. absorption cell (H01S3/1396, H01S3/1398 take precedence)}	H01S3/139	H01S3/139		138
H01S3/1394	11	{by using an active reference, e.g. second laser, klystron or other standard frequency source}	H01S3/139	H01S3/139		123
H01S3/1396	11	{by using two modes present, e.g. Zeeman splitting (H01S3/1398 takes precedence)}	H01S3/139	H01S3/139		69
H01S3/1398	11	{by using a supplementary modulation of the output}	H01S3/139	H01S3/139		149
H01S3/14	8	characterised by the material used as the active medium	H01S3/14	H01S3/14		57
H01S3/16	9	Solid materials	H01S3/16	H01S3/16		618
H01S3/1601	10	{characterised by an active (lasing) ion}	H01S3/16	H01S3/16		47
H01S3/1603	11	{rare earth}	H01S3/16	H01S3/16		326
H01S3/1605	12	{terbium}	H01S3/16	H01S3/16		37
H01S3/1606	12	{dysprosium}	H01S3/16	H01S3/16		55
H01S3/1608	12	{erbium}	H01S3/16	H01S3/16		1345
H01S3/161	12	{holmium}	H01S3/16	H01S3/16		191
H01S3/1611	12	{neodymium}	H01S3/16	H01S3/16		1011
H01S3/1613	12	{praseodymium}	H01S3/16	H01S3/16		164
H01S3/1615	12	{samarium}	H01S3/16	H01S3/16		19
H01S3/1616	12	{thulium}	H01S3/16	H01S3/16		402
H01S3/1618	12	{ytterbium}	H01S3/16	H01S3/16		1166
H01S3/162	11	{transition metal}	H01S3/16	H01S3/16		56
H01S3/1621	12	{cobalt}	H01S3/16	H01S3/16		6
H01S3/1623	12	{chromium, e.g. Alexandrite}	H01S3/16	H01S3/16		230
H01S3/1625	12	{titanium}	H01S3/16	H01S3/16		222
H01S3/1626	11	{uranium}	H01S3/16	H01S3/16		1
H01S3/1628	10	{characterised by a semiconducting matrix}	H01S3/16	H01S3/16		126
H01S3/163	10	{characterised by a crystal matrix}	H01S3/16	H01S3/16		244
H01S3/1631	11	{aluminate}	H01S3/16	H01S3/16		50
H01S3/1633	12	{BeAl2O4, i.e. Chrysoberyl}	H01S3/16	H01S3/16		64
H01S3/1635	12	{LaMgAl11O19 (LNA, Lanthanum Magnesium Hexaluminate)}	H01S3/16	H01S3/16		11
H01S3/1636	12	{Al2O3 (Sapphire)}	H01S3/16	H01S3/16		232
H01S3/1638	12	{YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)}	H01S3/16	H01S3/16		57
H01S3/164	11	{garnet}	H01S3/16	H01S3/16		75
H01S3/1641	12	{GGG}	H01S3/16	H01S3/16		14
H01S3/1643	12	{YAG}	H01S3/16	H01S3/16		983
H01S3/1645	11	{halide}	H01S3/16	H01S3/16		96
H01S3/1646	12	{BaY2F8}	H01S3/16	H01S3/16		5
H01S3/1648	12	{with the formula XYZF6 (Colquiriite structure), wherein X is Li, Na, K or Rb, Y is Mg, Ca, Sr, Cd or Ba and Z is Al, Sc or Ga}	H01S3/16	H01S3/16		45
H01S3/165	12	{with the formula MF2, wherein M is Ca, Sr or Ba}	H01S3/16	H01S3/16		41
H01S3/1651	12	{SrAlF5}	H01S3/16	H01S3/16		3
H01S3/1653	12	{YLiF4(YLF, LYF)}	H01S3/16	H01S3/16		140
H01S3/1655	11	{silicate}	H01S3/16	H01S3/16		61
H01S3/1656	12	{BeAl2(SiO3)6}	H01S3/16	H01S3/16		2
H01S3/1658	12	{Mg2SiO4 (Forsterite)}	H01S3/16	H01S3/16		23
H01S3/166	12	{La3Ga5SiO14 [LGS]}	H01S3/16	H01S3/16		2
H01S3/1661	12	{Y2SiO5 [YSO]}	H01S3/16	H01S3/16		10
H01S3/1663	11	{beryllate}	H01S3/16	H01S3/16		3
H01S3/1665	12	{La2Be2O5 [BEL]}	H01S3/16	H01S3/16		4
H01S3/1666	11	{borate, carbonate, arsenide}	H01S3/16	H01S3/16		80
H01S3/1668	11	{scandate}	H01S3/16	H01S3/16		15
H01S3/167	12	{Sc2O3}	H01S3/16	H01S3/16		6
H01S3/1671	11	{vanadate, niobate, tantalate}	H01S3/16	H01S3/16		110
H01S3/1673	12	{YVO4 [YVO]}	H01S3/16	H01S3/16		336
H01S3/1675	11	{titanate, germanate, molybdate, tungstate}	H01S3/16	H01S3/16		80
H01S3/1676	12	{Li4Ge5O12}	H01S3/16	H01S3/16		
H01S3/1678	12	{LaBGeO5}	H01S3/16	H01S3/16		
H01S3/168	10	{using an organic dye dispersed in a solid matrix}	H01S3/16	H01S3/16		200
H01S3/1681	10	{using colour centres}	H01S3/16	H01S3/16		38
H01S3/1683	10	{using superconductivity, e.g. provided with Josephson junctions}	H01S3/16	H01S3/16		10
H01S3/1685	10	{Ceramics}	H01S3/16	H01S3/16		127
H01S3/1686	10	{Liquid crystal active layer}	H01S3/16	H01S3/16		33
H01S3/1688	10	{Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant}	H01S3/16	H01S3/16		55
H01S3/169	10	{Nanoparticles, e.g. doped nanoparticles acting as a gain material}	H01S3/16	H01S3/16		162
H01S3/1691	10	{characterised by additives / sensitisers / promoters as further dopants}	H01S3/16	H01S3/16		82
H01S3/1693	11	{aluminium}	H01S3/16	H01S3/16		64
H01S3/1695	11	{germanium}	H01S3/16	H01S3/16		43
H01S3/1696	11	{transition metal}	H01S3/16	H01S3/16		31
H01S3/1698	11	{rare earth}	H01S3/16	H01S3/16		122
H01S3/17	10	amorphous, e.g. glass	H01S3/17	H01S3/17		440
H01S3/171	11	{chalcogenide glass}	H01S3/17	H01S3/17		20
H01S3/172	11	{selenide glass}	H01S3/17	H01S3/17		3
H01S3/173	11	{fluoride glass, e.g. fluorozirconate or ZBLAN [ ZrF4-BaF2-LaF3-AlF3-NaF]}	H01S3/17	H01S3/17		113
H01S3/175	11	{phosphate glass}	H01S3/17	H01S3/17		89
H01S3/176	11	{silica or silicate glass}	H01S3/17	H01S3/17		143
H01S3/177	11	{telluride glass}	H01S3/17	H01S3/17		48
H01S3/178	11	{plastic}	H01S3/17	H01S3/17		52
H01S3/20	9	Liquids	H01S3/20	H01S3/20		122
H01S3/207	10	including a chelate {, e.g. including atoms or ions, e.g. Nd}	H01S3/207	H01S3/207		42
H01S3/213	10	including an organic dye	H01S3/213	H01S3/213		314
H01S3/22	9	Gases	H01S3/22	H01S3/22		249
H01S3/2207	10	{Noble gas ions, e.g. Ar+&gt;, Kr+&gt;}	H01S3/22	H01S3/22		88
H01S3/2215	10	{Iodine compounds or atomic iodine}	H01S3/22	H01S3/22		103
H01S3/2222	10	{Neon, e.g. in helium-neon (He-Ne) systems}	H01S3/22	H01S3/22		69
H01S3/223	10	the active gas being polyatomic, i.e. containing two or more atoms (H01S3/227 takes precedence)	H01S3/223	H01S3/223		215
H01S3/2232	11	{Carbon dioxide (CO2) or monoxide [CO]}	H01S3/223	H01S3/223		652
H01S3/2235	11	{Dye vapour}	H01S3/223	H01S3/223		2
H01S3/2237	11	{Molecular nitrogen (N2), e.g. in noble gas-N2 systems}	H01S3/223	H01S3/223		26
H01S3/225	11	comprising an excimer or exciplex	H01S3/225	H01S3/225		1121
H01S3/2251	12	{ArF, i.e. argon fluoride is comprised for lasing around 193 nm}	H01S3/225	H01S3/225		190
H01S3/2253	12	{XeCl, i.e. xenon chloride is comprised for lasing around 308 nm}	H01S3/225	H01S3/225		19
H01S3/2255	12	{XeF, i.e. xenon fluoride is comprised for lasing around 351 nm}	H01S3/225	H01S3/225		17
H01S3/2256	12	{KrF, i.e. krypton fluoride is comprised for lasing around 248 nm}	H01S3/225	H01S3/225		131
H01S3/2258	12	{F2, i.e. molecular fluoride is comprised for lasing around 157 nm}	H01S3/225	H01S3/225		108
H01S3/227	10	Metal vapour	H01S3/227	H01S3/227		139
H01S3/23	8	Arrangements of two or more lasers not provided for in groups H01S3/02&#160;-&#160;H01S3/22, e.g. tandem arrangements of separate active media	H01S3/23	H01S3/23		412
H01S3/2308	9	{Amplifier arrangements, e.g. MOPA}	H01S3/23	H01S3/23		1003
H01S3/2316	10	{Cascaded amplifiers}	H01S3/23	H01S3/23		677
H01S3/2325	10	{Multi-pass amplifiers, e.g. regenerative amplifiers}	H01S3/23	H01S3/23		263
H01S3/2333	11	{Double-pass amplifiers}	H01S3/23	H01S3/23		442
H01S3/2341	11	{Four pass amplifiers}	H01S3/23	H01S3/23		83
H01S3/235	11	{Regenerative amplifiers}	H01S3/23	H01S3/23		244
H01S3/2358	9	{comprising dyes as the active medium}	H01S3/23	H01S3/23		37
H01S3/2366	9	{comprising a gas as the active medium (H01S3/10092, H01S3/2383 take precedence)}	H01S3/23	H01S3/23		233
H01S3/2375	9	{Hybrid lasers (H01S3/07 takes precedence)}	H01S3/23	H01S3/23		361
H01S3/2383	9	{Parallel arrangements}	H01S3/23	H01S3/23		1421
H01S3/2391	10	{emitting at different wavelengths}	H01S3/23	H01S3/23		592
H01S3/30	8	using scattering effects, e.g. stimulated Brillouin or Raman effects	H01S3/30	H01S3/30		457
H01S3/302	9	{in an optical fibre}	H01S3/30	H01S3/30		1389
H01S3/305	9	{in a gas}	H01S3/30	H01S3/30		190
H01S3/307	9	{in a liquid}	H01S3/30	H01S3/30		52
H01S4/00	7	Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers	H01S4/00	H01S4/00		254
H01S5/00	7	Semiconductor lasers (superluminescent diodes H10H20/00)<br><br><u>NOTE</u><br><br> Attention is drawn to Note (3) after the title of section C, which Note indicates to which version of the Periodic Table of chemical elements the CPC refers. In this group,the system used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder.	H01S5/00	H01S5/00		329
H01S5/0014	8	{Measuring characteristics or properties thereof (measuring techniques per seG01J, G01K, G01N, G01R)}	H01S5/00	H01S5/00		994
H01S5/0021	9	{Degradation or life time measurements}	H01S5/00	H01S5/00		315
H01S5/0028	9	{Laser diodes used as detectors}	H01S5/00	H01S5/00		205
H01S5/0035	9	{Simulations of laser characteristics}	H01S5/00	H01S5/00		74
H01S5/0042	9	{On wafer testing, e.g. lasers are tested before separating wafer into chips}	H01S5/00	H01S5/00		138
H01S5/005	8	{Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping (H01S5/026, H01S5/18388 take precedence)}	H01S5/00	H01S5/00		2158
H01S5/0057	9	{for temporal shaping, e.g. pulse compression, frequency chirping}	H01S5/00	H01S5/00		204
H01S5/0064	9	{Anti-reflection components, e.g. optical isolators}	H01S5/00	H01S5/00		437
H01S5/0071	9	{for beam steering, e.g. using a mirror outside the cavity to change the beam direction}	H01S5/00	H01S5/00		1127
H01S5/0078	9	{for frequency filtering}	H01S5/00	H01S5/00		363
H01S5/0085	9	{for modulating the output, i.e. the laser beam is modulated outside the laser cavity}	H01S5/00	H01S5/00		824
H01S5/0087	9	{for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials}	H01S5/00	H01S5/00		643
H01S5/0092	9	{for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity}	H01S5/00	H01S5/00		395
H01S5/02	8	Structural details or components not essential to laser action	H01S5/02	H01S5/02		554
H01S5/0201	9	{Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth}	H01S5/02	H01S5/02		445
H01S5/0202	10	{Cleaving}	H01S5/02	H01S5/02		709
H01S5/0203	10	{Etching}	H01S5/02	H01S5/02		257
H01S5/0205	10	{during growth of the semiconductor body}	H01S5/02	H01S5/02		74
H01S5/0206	9	{Substrates, e.g. growth, shape, material, removal or bonding; (specific crystal orientation H01S5/3202)}	H01S5/02	H01S5/02		457
H01S5/0207	10	{Substrates having a special shape}	H01S5/02	H01S5/02		613
H01S5/0208	10	{Semi-insulating substrates}	H01S5/02	H01S5/02		210
H01S5/021	10	{Silicon based substrates}	H01S5/02	H01S5/02		958
H01S5/0211	10	{Substrates made of ternary or quaternary compounds}	H01S5/02	H01S5/02		53
H01S5/0212	11	{with a graded composition}	H01S5/02	H01S5/02		11
H01S5/0213	10	{Sapphire, quartz or diamond based substrates}	H01S5/02	H01S5/02		344
H01S5/0215	10	{Bonding to the substrate}	H01S5/02	H01S5/02		328
H01S5/0216	11	{using an intermediate compound, e.g. a glue or solder}	H01S5/02	H01S5/02		225
H01S5/0217	10	{Removal of the substrate}	H01S5/02	H01S5/02		495
H01S5/0218	10	{Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer}	H01S5/02	H01S5/02		174
H01S5/022	9	Mountings; Housings	H01S5/022	H01S5/022		490
H01S5/02208	10	characterised by the shape of the housings	H01S5/02208	H01S5/02208		918
H01S5/02212	11	Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis	H01S5/02212	H01S5/02212		1362
H01S5/02216	11	Butterfly-type, i.e. with electrode pins extending horizontally from the housings	H01S5/02216	H01S5/02216		655
H01S5/02218	10	Material of the housings; Filling of the housings	H01S5/02218	H01S5/02218		193
H01S5/0222	11	Gas-filled housings	H01S5/0222	H01S5/0222		265
H01S5/02224	12	the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets	H01S5/02224	H01S5/02224		40
H01S5/02232	11	Liquid-filled housings	H01S5/02232	H01S5/02232		20
H01S5/02234	11	Resin-filled housings; the housings being made of resin	H01S5/02234	H01S5/02234		329
H01S5/02235	10	Getter material for absorbing contamination	H01S5/02235	H01S5/02235		36
H01S5/0225	10	Out-coupling of light	H01S5/0225	H01S5/0225		459
H01S5/02251	11	using optical fibres	H01S5/02251	H01S5/02251		2265
H01S5/02253	11	using lenses	H01S5/02253	H01S5/02253		1604
H01S5/02255	11	using beam deflecting elements	H01S5/02255	H01S5/02255		982
H01S5/02257	11	using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing	H01S5/02257	H01S5/02257		965
H01S5/023	10	Mount members, e.g. sub-mount members	H01S5/023	H01S5/023		702
H01S5/0231	11	Stems	H01S5/0231	H01S5/0231		286
H01S5/02315	11	Support members, e.g. bases or carriers	H01S5/02315	H01S5/02315		790
H01S5/0232	11	Lead-frames	H01S5/0232	H01S5/0232		331
H01S5/02325	11	Mechanically integrated components on mount members or optical micro-benches	H01S5/02325	H01S5/02325		2017
H01S5/02326	12	Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses	H01S5/02326	H01S5/02326		1277
H01S5/0233	10	Mounting configuration of laser chips	H01S5/0233	H01S5/0233		738
H01S5/02335	11	Up-side up mountings, e.g. epi-side up mountings or junction up mountings	H01S5/02335	H01S5/02335		85
H01S5/0234	11	Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings	H01S5/0234	H01S5/0234		931
H01S5/02345	11	Wire-bonding	H01S5/02345	H01S5/02345		1830
H01S5/0235	10	Method for mounting laser chips	H01S5/0235	H01S5/0235		696
H01S5/02355	11	Fixing laser chips on mounts	H01S5/02355	H01S5/02355		309
H01S5/0236	12	using an adhesive	H01S5/0236	H01S5/0236		206
H01S5/02365	12	by clamping	H01S5/02365	H01S5/02365		217
H01S5/0237	12	by soldering	H01S5/0237	H01S5/0237		1446
H01S5/02375	11	Positioning of the laser chips	H01S5/02375	H01S5/02375		330
H01S5/0238	12	using marks	H01S5/0238	H01S5/0238		88
H01S5/02385	12	using laser light as reference	H01S5/02385	H01S5/02385		27
H01S5/0239	10	Combinations of electrical or optical elements	H01S5/0239	H01S5/0239		903
H01S5/024	9	Arrangements for thermal management	H01S5/024	H01S5/024		1033
H01S5/02407	10	{Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling}	H01S5/024	H01S5/024		339
H01S5/02415	11	{by using a thermo-electric cooler [TEC], e.g. Peltier element}	H01S5/024	H01S5/024		1507
H01S5/02423	11	{Liquid cooling, e.g. a liquid cools a mount of the laser}	H01S5/024	H01S5/024		841
H01S5/0243	12	{Laser is immersed in the coolant, i.e. the whole laser chip is immersed in the liquid for cooling}	H01S5/024	H01S5/024		27
H01S5/02438	10	{Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens}	H01S5/024	H01S5/024		455
H01S5/02446	11	{Cooling being separate from the laser chip cooling}	H01S5/024	H01S5/024		141
H01S5/02453	10	{Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment (H01S5/0612 takes precedence, for monolithically integrated heaters see also H01S5/0261)}	H01S5/024	H01S5/024		333
H01S5/02461	10	{Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity}	H01S5/024	H01S5/024		496
H01S5/02469	10	{Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC}	H01S5/024	H01S5/024		1687
H01S5/02476	10	{Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements}	H01S5/024	H01S5/024		1046
H01S5/02484	11	{Sapphire or diamond heat spreaders}	H01S5/024	H01S5/024		191
H01S5/02492	11	{CuW heat spreaders}	H01S5/024	H01S5/024		112
H01S5/026	9	Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)	H01S5/026	H01S5/026		2700
H01S5/0261	10	{Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence)}	H01S5/026	H01S5/026		938
H01S5/0262	10	{Photo-diodes, e.g. transceiver devices, bidirectional devices (H01S5/0265 takes precedence)}	H01S5/026	H01S5/026		562
H01S5/0264	11	{for monitoring the laser-output}	H01S5/026	H01S5/026		877
H01S5/0265	10	{Intensity modulators (intra-cavity modulators H01S5/0625)}	H01S5/026	H01S5/026		1223
H01S5/0267	10	{Integrated focusing lens (H01S5/18388 takes precedence)}	H01S5/026	H01S5/026		220
H01S5/0268	10	{Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"}	H01S5/026	H01S5/026		251
H01S5/028	9	Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers}	H01S5/028	H01S5/028		1488
H01S5/0281	10	{Coatings made of semiconductor materials}	H01S5/028	H01S5/028		196
H01S5/0282	10	{Passivation layers or treatments}	H01S5/028	H01S5/028		441
H01S5/0283	11	{Optically inactive coating on the facet, e.g. half-wave coating}	H01S5/028	H01S5/028		93
H01S5/0284	10	{Coatings with a temperature dependent reflectivity}	H01S5/028	H01S5/028		16
H01S5/0285	10	{Coatings with a controllable reflectivity}	H01S5/028	H01S5/028		53
H01S5/0286	10	{Coatings with a reflectivity that is not constant over the facets, e.g. apertures}	H01S5/028	H01S5/028		92
H01S5/0287	10	{Facet reflectivity}	H01S5/028	H01S5/028		814
H01S5/0288	11	{Detuned facet reflectivity, i.e. reflectivity peak is different from gain maximum}	H01S5/028	H01S5/028		16
H01S5/04	8	Processes or apparatus for excitation, e.g. pumping, {e.g. by electron beams}(H01S5/06 takes precedence)	H01S5/04	H01S5/04		108
H01S5/041	9	{Optical pumping}	H01S5/04	H01S5/04		896
H01S5/042	9	Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)}	H01S5/042	H01S5/042		2350
H01S5/0421	10	{characterised by the semiconducting contacting layers (electrodes H01S5/0425)}	H01S5/042	H01S5/042		717
H01S5/0422	11	{with n- and p-contacts on the same side of the active layer}	H01S5/042	H01S5/042		417
H01S5/0424	12	{lateral current injection}	H01S5/042	H01S5/042		220
H01S5/0425	10	{Electrodes, e.g. characterised by the structure}	H01S5/042	H01S5/042		521
H01S5/04252	11	{characterised by the material}	H01S5/042	H01S5/042		669
H01S5/04253	12	{having specific optical properties, e.g. transparent electrodes}	H01S5/042	H01S5/042		434
H01S5/04254	11	{characterised by the shape}	H01S5/042	H01S5/042		1216
H01S5/04256	11	{characterised by the configuration}	H01S5/042	H01S5/042		1530
H01S5/04257	12	{having positive and negative electrodes on the same side of the substrate}	H01S5/042	H01S5/042		968
H01S5/0427	10	{for applying modulation to the laser}	H01S5/042	H01S5/042		937
H01S5/0428	10	{for applying pulses to the laser}	H01S5/042	H01S5/042		935
H01S5/06	8	Arrangements for controlling the laser output parameters, e.g. by operating on the active medium	H01S5/06	H01S5/06		688
H01S5/0601	9	{comprising an absorbing region (H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026)}	H01S5/06	H01S5/06		259
H01S5/0602	10	{which is an umpumped part of the active layer}	H01S5/06	H01S5/06		88
H01S5/0604	9	{comprising a non-linear region, e.g. generating harmonics of the laser frequency}	H01S5/06	H01S5/06		186
H01S5/0605	10	{Self doubling, e.g. lasing and frequency doubling by the same active medium}	H01S5/06	H01S5/06		43
H01S5/0607	9	{by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature}	H01S5/06	H01S5/06		320
H01S5/0608	10	{controlled by light, e.g. optical switch}	H01S5/06	H01S5/06		214
H01S5/0609	11	{acting on an absorbing region, e.g. wavelength convertors}	H01S5/06	H01S5/06		82
H01S5/0611	12	{wavelength convertors}	H01S5/06	H01S5/06		80
H01S5/0612	10	{controlled by temperature}	H01S5/06	H01S5/06		891
H01S5/0614	10	{controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect}	H01S5/06	H01S5/06		125
H01S5/0615	9	{Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed}	H01S5/06	H01S5/06		91
H01S5/0617	9	{using memorised or pre-programmed laser characteristics}	H01S5/06	H01S5/06		662
H01S5/0618	9	{Details on the linewidth enhancement parameter alpha}	H01S5/06	H01S5/06		24
H01S5/062	9	by varying the potential of the electrodes (H01S5/065 takes precedence)	H01S5/062	H01S5/062		215
H01S5/06203	10	{Transistor-type lasers (H01S5/0608 takes precedence)}	H01S5/062	H01S5/062		241
H01S5/06206	11	{Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]}	H01S5/062	H01S5/062		87
H01S5/06209	10	{in single-section lasers (H01S5/0608 takes precedence)}	H01S5/062	H01S5/062		124
H01S5/06213	11	{Amplitude modulation}	H01S5/062	H01S5/062		362
H01S5/06216	11	{Pulse modulation or generation}	H01S5/062	H01S5/062		618
H01S5/0622	11	{Controlling the frequency of the radiation}	H01S5/062	H01S5/062		323
H01S5/06223	10	{using delayed or positive feedback}	H01S5/062	H01S5/062		53
H01S5/06226	10	{Modulation at ultra-high frequencies}	H01S5/062	H01S5/062		568
H01S5/0623	11	{using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing}	H01S5/062	H01S5/062		86
H01S5/06233	10	{Controlling other output parameters than intensity or frequency}	H01S5/062	H01S5/062		47
H01S5/06236	11	{controlling the polarisation, e.g. TM/TE polarisation switching}	H01S5/062	H01S5/062		187
H01S5/0624	11	{controlling the near- or far field}	H01S5/062	H01S5/062		46
H01S5/06243	11	{controlling the position or direction of the emitted beam}	H01S5/062	H01S5/062		170
H01S5/06246	11	{controlling the phase}	H01S5/062	H01S5/062		144
H01S5/0625	10	in multi-section lasers	H01S5/0625	H01S5/0625		309
H01S5/06251	11	{Amplitude modulation}	H01S5/0625	H01S5/0625		98
H01S5/06253	11	{Pulse modulation}	H01S5/0625	H01S5/0625		85
H01S5/06255	11	{Controlling the frequency of the radiation}	H01S5/0625	H01S5/0625		216
H01S5/06256	12	{with DBR-structure}	H01S5/0625	H01S5/0625		745
H01S5/06258	12	{with DFB-structure}	H01S5/0625	H01S5/0625		460
H01S5/065	9	Mode locking; Mode suppression; Mode selection {; Self pulsating}	H01S5/065	H01S5/065		353
H01S5/0651	10	{Mode control}	H01S5/065	H01S5/065		108
H01S5/0652	11	{Coherence lowering or collapse, e.g. multimode emission by additional input or modulation}	H01S5/065	H01S5/065		93
H01S5/0653	11	{Mode suppression, e.g. specific multimode}	H01S5/065	H01S5/065		159
H01S5/0654	12	{Single longitudinal mode emission}	H01S5/065	H01S5/065		327
H01S5/0655	12	{Single transverse or lateral mode emission}	H01S5/065	H01S5/065		293
H01S5/0656	10	{Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component (H01S5/14, H01S5/4062 and H01S5/4006 take precedence)}	H01S5/065	H01S5/065		215
H01S5/0657	10	{Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity}	H01S5/065	H01S5/065		370
H01S5/0658	10	{Self-pulsating}	H01S5/065	H01S5/065		150
H01S5/068	9	Stabilisation of laser output parameters (H01S5/0625 takes precedence)	H01S5/068	H01S5/068		434
H01S5/06804	10	{by monitoring an external parameter, e.g. temperature}	H01S5/068	H01S5/068		809
H01S5/06808	10	{by monitoring the electrical laser parameters, e.g. voltage or current}	H01S5/068	H01S5/068		522
H01S5/06812	10	{by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics}	H01S5/068	H01S5/068		148
H01S5/06817	10	{Noise reduction}	H01S5/068	H01S5/068		144
H01S5/06821	10	{Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields}	H01S5/068	H01S5/068		200
H01S5/06825	10	{Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation}	H01S5/068	H01S5/068		899
H01S5/0683	10	by monitoring the optical output parameters	H01S5/0683	H01S5/0683		2386
H01S5/06832	11	{Stabilising during amplitude modulation}	H01S5/0683	H01S5/0683		501
H01S5/06835	11	{Stabilising during pulse modulation or generation}	H01S5/0683	H01S5/0683		360
H01S5/06837	11	{Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature}	H01S5/0683	H01S5/0683		321
H01S5/0687	11	Stabilising the frequency of the laser	H01S5/0687	H01S5/0687		1713
H01S5/10	8	Construction or shape of the optical resonator {, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region (H01S5/20 takes precedence)}	H01S5/10	H01S5/10		1166
H01S5/1003	9	{Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids}	H01S5/10	H01S5/10		285
H01S5/1007	10	{Branched waveguides}	H01S5/10	H01S5/10		119
H01S5/101	10	{Curved waveguide (H01S5/1243 takes precedence)}	H01S5/10	H01S5/10		313
H01S5/1014	10	{Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence)}	H01S5/10	H01S5/10		601
H01S5/1017	10	{Waveguide having a void for insertion of materials to change optical properties}	H01S5/10	H01S5/10		133
H01S5/1021	9	{Coupled cavities (H01S5/14 takes precedence)}	H01S5/10	H01S5/10		327
H01S5/1025	9	{Extended cavities}	H01S5/10	H01S5/10		116
H01S5/1028	9	{Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures}	H01S5/10	H01S5/10		215
H01S5/1032	10	{Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region}	H01S5/10	H01S5/10		874
H01S5/1035	11	{Forward coupled structures [DFC]}	H01S5/10	H01S5/10		70
H01S5/1039	9	{Details on the cavity length}	H01S5/10	H01S5/10		528
H01S5/1042	9	{Optical microcavities, e.g. cavity dimensions comparable to the wavelength}	H01S5/10	H01S5/10		352
H01S5/1046	9	{Comprising interactions between photons and plasmons, e.g. by a corrugated surface}	H01S5/10	H01S5/10		123
H01S5/1053	9	{Comprising an active region having a varying composition or cross-section in a specific direction}	H01S5/10	H01S5/10		70
H01S5/1057	10	{varying composition along the optical axis}	H01S5/10	H01S5/10		66
H01S5/106	10	{varying thickness along the optical axis}	H01S5/10	H01S5/10		142
H01S5/1064	10	{varying width along the optical axis}	H01S5/10	H01S5/10		486
H01S5/1067	10	{comprising nanoparticles}	H01S5/10	H01S5/10		33
H01S5/1071	9	{Ring-lasers}	H01S5/10	H01S5/10		426
H01S5/1075	10	{Disk lasers with special modes, e.g. whispering gallery lasers}	H01S5/10	H01S5/10		129
H01S5/1078	9	{with means to control the spontaneous emission, e.g. reducing or reinjection}	H01S5/10	H01S5/10		62
H01S5/1082	9	{with a special facet structure, e.g. structured, non planar, oblique}	H01S5/10	H01S5/10		312
H01S5/1085	10	{Oblique facets}	H01S5/10	H01S5/10		367
H01S5/1089	9	{Unstable resonators}	H01S5/10	H01S5/10		22
H01S5/1092	9	{Multi-wavelength lasing}	H01S5/10	H01S5/10		231
H01S5/1096	10	{in a single cavity}	H01S5/10	H01S5/10		212
H01S5/11	9	Comprising a photonic bandgap structure	H01S5/11	H01S5/11		834
H01S5/12	9	the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18)	H01S5/12	H01S5/12		2058
H01S5/1203	10	{over only a part of the length of the active region}	H01S5/12	H01S5/12		172
H01S5/1206	10	{having a non constant or multiplicity of periods}	H01S5/12	H01S5/12		88
H01S5/1209	11	{Sampled grating}	H01S5/12	H01S5/12		238
H01S5/1212	11	{Chirped grating}	H01S5/12	H01S5/12		158
H01S5/1215	11	{Multiplicity of periods}	H01S5/12	H01S5/12		314
H01S5/1218	12	{in superstructured configuration, e.g. more than one period in an alternate sequence}	H01S5/12	H01S5/12		73
H01S5/1221	10	{Detuning between Bragg wavelength and gain maximum}	H01S5/12	H01S5/12		101
H01S5/1225	10	{with a varying coupling constant along the optical axis}	H01S5/12	H01S5/12		130
H01S5/1228	10	{DFB lasers with a complex coupled grating, e.g. gain or loss coupling}	H01S5/12	H01S5/12		529
H01S5/1231	10	{Grating growth or overgrowth details}	H01S5/12	H01S5/12		442
H01S5/1234	10	{Actively induced grating, e.g. acoustically or electrically induced}	H01S5/12	H01S5/12		69
H01S5/1237	10	{Lateral grating, i.e. grating only adjacent ridge or mesa}	H01S5/12	H01S5/12		230
H01S5/124	10	{incorporating phase shifts}	H01S5/12	H01S5/12		271
H01S5/1243	11	{by other means than a jump in the grating period, e.g. bent waveguides}	H01S5/12	H01S5/12		106
H01S5/1246	11	{plurality of phase shifts}	H01S5/12	H01S5/12		70
H01S5/125	10	Distributed Bragg reflector [DBR] lasers	H01S5/125	H01S5/125		1283
H01S5/14	9	External cavity lasers (H01S5/18 takes precedence; mode locking H01S5/065)<br><br><u>NOTE</u><br><br> in this group external cavity elements correspond to elements inside the laser cavity but outside the monolithic semiconductor body. These elements correspond to intra cavity elements in H01S3/00	H01S5/14	H01S5/14		945
H01S5/141	10	{using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence)}	H01S5/14	H01S5/14		2094
H01S5/142	11	{which comprises an additional resonator}	H01S5/14	H01S5/14		609
H01S5/143	11	{Littman-Metcalf configuration, e.g. laser - grating - mirror}	H01S5/14	H01S5/14		310
H01S5/145	10	{Phase conjugate mirrors}	H01S5/14	H01S5/14		14
H01S5/146	10	{using a fiber as external cavity}	H01S5/14	H01S5/14		560
H01S5/147	11	{having specially shaped fibre, e.g. lensed or tapered end portion}	H01S5/14	H01S5/14		93
H01S5/148	10	{using a Talbot cavity}	H01S5/14	H01S5/14		32
H01S5/16	9	Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence)	H01S5/16	H01S5/16		377
H01S5/162	10	{with window regions made by diffusion or disordening of the active layer}	H01S5/16	H01S5/16		205
H01S5/164	10	{with window regions comprising semiconductor material with a wider bandgap than the active layer}	H01S5/16	H01S5/16		205
H01S5/166	10	{with window regions comprising non-semiconducting materials}	H01S5/16	H01S5/16		20
H01S5/168	10	{with window regions comprising current blocking layers}	H01S5/16	H01S5/16		155
H01S5/18	9	Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities	H01S5/18	H01S5/18		232
H01S5/183	10	having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]	H01S5/183	H01S5/183		2566
H01S5/18302	11	{comprising an integrated optical modulator}	H01S5/183	H01S5/183		288
H01S5/18305	11	{with emission through the substrate, i.e. bottom emission}	H01S5/183	H01S5/183		715
H01S5/18308	11	{having a special structure for lateral current or light confinement}	H01S5/183	H01S5/183		1125
H01S5/18311	12	{using selective oxidation}	H01S5/183	H01S5/183		1222
H01S5/18313	13	{by oxidizing at least one of the DBR layers}	H01S5/183	H01S5/183		499
H01S5/18316	12	{Airgap confined}	H01S5/183	H01S5/183		88
H01S5/18319	12	{comprising a periodical structure in lateral directions}	H01S5/183	H01S5/183		144
H01S5/18322	12	{Position of the structure}	H01S5/183	H01S5/183		105
H01S5/18325	13	{Between active layer and substrate}	H01S5/183	H01S5/183		67
H01S5/18327	13	{Structure being part of a DBR (H01S5/18391 takes precedence)}	H01S5/183	H01S5/183		307
H01S5/1833	13	{with more than one structure}	H01S5/183	H01S5/183		242
H01S5/18333	14	{only above the active layer}	H01S5/183	H01S5/183		185
H01S5/18336	14	{only below the active layer}	H01S5/183	H01S5/183		10
H01S5/18338	12	{Non-circular shape of the structure}	H01S5/183	H01S5/183		184
H01S5/18341	11	{Intra-cavity contacts}	H01S5/183	H01S5/183		793
H01S5/18344	11	{characterized by the mesa, e.g. dimensions or shape of the mesa}	H01S5/183	H01S5/183		302
H01S5/18347	12	{Mesa comprising active layer}	H01S5/183	H01S5/183		364
H01S5/1835	12	{Non-circular mesa}	H01S5/183	H01S5/183		224
H01S5/18352	12	{Mesa with inclined sidewall}	H01S5/183	H01S5/183		133
H01S5/18355	11	{having a defined polarisation}	H01S5/183	H01S5/183		307
H01S5/18358	11	{containing spacer layers to adjust the phase of the light wave in the cavity}	H01S5/183	H01S5/183		536
H01S5/18361	11	{Structure of the reflectors, e.g. hybrid mirrors}	H01S5/183	H01S5/183		1028
H01S5/18363	12	{comprising air layers}	H01S5/183	H01S5/183		85
H01S5/18366	13	{Membrane DBR, i.e. a movable DBR on top of the VCSEL}	H01S5/183	H01S5/183		311
H01S5/18369	12	{based on dielectric materials}	H01S5/183	H01S5/183		676
H01S5/18372	13	{by native oxidation}	H01S5/183	H01S5/183		68
H01S5/18375	12	{based on metal reflectors}	H01S5/183	H01S5/183		155
H01S5/18377	12	{comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}	H01S5/183	H01S5/183		359
H01S5/1838	12	{Reflector bonded by wafer fusion or by an intermediate compound}	H01S5/183	H01S5/183		114
H01S5/18383	11	{with periodic active regions at nodes or maxima of light intensity}	H01S5/183	H01S5/183		199
H01S5/18386	11	{Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface}	H01S5/183	H01S5/183		347
H01S5/18388	12	{Lenses}	H01S5/183	H01S5/183		429
H01S5/18391	12	{Aperiodic structuring to influence the near- or far-field distribution}	H01S5/183	H01S5/183		194
H01S5/18394	12	{Apertures, e.g. defined by the shape of the upper electrode}	H01S5/183	H01S5/183		467
H01S5/18397	11	{Plurality of active layers vertically stacked in a cavity for multi-wavelength emission}	H01S5/183	H01S5/183		140
H01S5/185	10	having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure H01S5/11)	H01S5/185	H01S5/185		372
H01S5/187	11	using Bragg reflection	H01S5/187	H01S5/187		785
H01S5/20	8	Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers}	H01S5/20	H01S5/20		912
H01S5/2004	9	{Confining in the direction perpendicular to the layer structure}	H01S5/20	H01S5/20		506
H01S5/2009	10	{by using electron barrier layers}	H01S5/20	H01S5/20		693
H01S5/2013	11	{MQW barrier reflection layers}	H01S5/20	H01S5/20		170
H01S5/2018	10	{Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers}	H01S5/20	H01S5/20		349
H01S5/2022	11	{Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes}	H01S5/20	H01S5/20		137
H01S5/2027	11	{Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes}	H01S5/20	H01S5/20		272
H01S5/2031	11	{characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities}	H01S5/20	H01S5/20		458
H01S5/2036	9	{Broad area lasers}	H01S5/20	H01S5/20		244
H01S5/204	9	{Strongly index guided structures}	H01S5/20	H01S5/20		89
H01S5/2045	10	{employing free standing waveguides or air gap confinement}	H01S5/20	H01S5/20		42
H01S5/205	9	{Antiguided structures}	H01S5/20	H01S5/20		54
H01S5/2054	9	{Methods of obtaining the confinement}	H01S5/20	H01S5/20		61
H01S5/2059	10	{by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion}	H01S5/20	H01S5/20		543
H01S5/2063	11	{obtained by particle bombardment}	H01S5/20	H01S5/20		468
H01S5/2068	11	{obtained by radiation treatment or annealing}	H01S5/20	H01S5/20		98
H01S5/2072	11	{obtained by vacancy induced diffusion}	H01S5/20	H01S5/20		96
H01S5/2077	10	{using lateral bandgap control during growth, e.g. selective growth, mask induced}	H01S5/20	H01S5/20		181
H01S5/2081	10	{using special etching techniques}	H01S5/20	H01S5/20		285
H01S5/2086	11	{lateral etch control, e.g. mask induced}	H01S5/20	H01S5/20		226
H01S5/209	11	{special etch stop layers}	H01S5/20	H01S5/20		280
H01S5/2095	10	{using melting or mass transport}	H01S5/20	H01S5/20		16
H01S5/22	9	having a ridge or stripe structure	H01S5/22	H01S5/22		2580
H01S5/2201	10	{in a specific crystallographic orientation}	H01S5/22	H01S5/22		392
H01S5/2202	10	{by making a groove in the upper laser structure}	H01S5/22	H01S5/22		226
H01S5/2203	10	{with a transverse junction stripe [TJS] structure}	H01S5/22	H01S5/22		117
H01S5/2205	10	{comprising special burying or current confinement layers}	H01S5/22	H01S5/22		449
H01S5/2206	11	{based on III-V materials}	H01S5/22	H01S5/22		422
H01S5/2207	12	{GaAsP based}	H01S5/22	H01S5/22		28
H01S5/2209	12	{GaInP based}	H01S5/22	H01S5/22		76
H01S5/221	12	{containing aluminium}	H01S5/22	H01S5/22		171
H01S5/2211	11	{based on II-VI materials}	H01S5/22	H01S5/22		54
H01S5/2213	11	{based on polyimide or resin}	H01S5/22	H01S5/22		101
H01S5/2214	11	{based on oxides or nitrides}	H01S5/22	H01S5/22		386
H01S5/2215	12	{using native oxidation of semiconductor layers}	H01S5/22	H01S5/22		88
H01S5/2216	12	{nitrides}	H01S5/22	H01S5/22		74
H01S5/2218	11	{having special optical properties}	H01S5/22	H01S5/22		95
H01S5/2219	12	{absorbing}	H01S5/22	H01S5/22		100
H01S5/222	12	{having a refractive index lower than that of the cladding layers or outer guiding layers}	H01S5/22	H01S5/22		161
H01S5/2222	11	{having special electric properties}	H01S5/22	H01S5/22		213
H01S5/2223	12	{hetero barrier blocking layers, e.g. P-P or N-N}	H01S5/22	H01S5/22		48
H01S5/2224	12	{semi-insulating semiconductors}	H01S5/22	H01S5/22		326
H01S5/2226	12	{semiconductors with a specific doping}	H01S5/22	H01S5/22		157
H01S5/2227	12	{special thin layer sequence}	H01S5/22	H01S5/22		79
H01S5/2228	13	{quantum wells}	H01S5/22	H01S5/22		71
H01S5/223	10	Buried stripe structure {(H01S5/227 takes precedence)}	H01S5/223	H01S5/223		226
H01S5/2231	11	{with inner confining structure only between the active layer and the upper electrode}	H01S5/223	H01S5/223		1181
H01S5/2232	11	{with inner confining structure between the active layer and the lower electrode}	H01S5/223	H01S5/223		346
H01S5/2234	12	{having a structured substrate surface}	H01S5/223	H01S5/223		247
H01S5/2235	13	{with a protrusion}	H01S5/223	H01S5/223		175
H01S5/2237	11	{with a non-planar active layer}	H01S5/223	H01S5/223		341
H01S5/2238	11	{with a terraced structure}	H01S5/223	H01S5/223		148
H01S5/227	10	Buried mesa structure {; Striped active layer}	H01S5/227	H01S5/227		1361
H01S5/2272	11	{grown by a mask induced selective growth}	H01S5/227	H01S5/227		193
H01S5/2275	11	{mesa created by etching}	H01S5/227	H01S5/227		1361
H01S5/2277	12	{double channel planar buried heterostructure [DCPBH] laser}	H01S5/227	H01S5/227		230
H01S5/24	9	having a grooved structure, e.g. V-grooved {, crescent active layer in groove, VSIS laser}	H01S5/24	H01S5/24		410
H01S5/30	8	Structure or shape of the active region; Materials used for the active region	H01S5/30	H01S5/30		898
H01S5/3004	9	{employing a field effect structure for inducing charge-carriers, e.g. FET}	H01S5/30	H01S5/30		25
H01S5/3009	10	{MIS or MOS conffigurations}	H01S5/30	H01S5/30		18
H01S5/3013	9	{AIIIBV compounds}	H01S5/30	H01S5/30		517
H01S5/3018	9	{AIIBVI compounds}	H01S5/30	H01S5/30		42
H01S5/3022	9	{AIVBVI compounds}	H01S5/30	H01S5/30		5
H01S5/3027	9	{IV compounds}	H01S5/30	H01S5/30		43
H01S5/3031	10	{Si}	H01S5/30	H01S5/30		57
H01S5/3036	11	{SiC}	H01S5/30	H01S5/30		6
H01S5/304	11	{porous Si}	H01S5/30	H01S5/30		4
H01S5/3045	10	{diamond}	H01S5/30	H01S5/30		8
H01S5/305	9	{characterised by the doping materials used in the laser structure}	H01S5/30	H01S5/30		617
H01S5/3054	10	{p-doping}	H01S5/30	H01S5/30		428
H01S5/3059	11	{in II-VI materials}	H01S5/30	H01S5/30		32
H01S5/3063	11	{using Mg}	H01S5/30	H01S5/30		265
H01S5/3068	10	{deep levels}	H01S5/30	H01S5/30		53
H01S5/3072	10	{Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants}	H01S5/30	H01S5/30		119
H01S5/3077	10	{plane dependent doping}	H01S5/30	H01S5/30		51
H01S5/3081	11	{using amphoteric doping}	H01S5/30	H01S5/30		34
H01S5/3086	10	{doping of the active layer}	H01S5/30	H01S5/30		183
H01S5/309	11	{doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per seH01S5/3407)}	H01S5/30	H01S5/30		107
H01S5/3095	10	{Tunnel junction}	H01S5/30	H01S5/30		503
H01S5/32	9	comprising PN junctions, e.g. hetero- or double- heterostructures (H01S5/34, H01S5/36 take precedence)	H01S5/32	H01S5/32		611
H01S5/3201	10	{incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation}	H01S5/32	H01S5/32		395
H01S5/3202	10	{grown on specifically orientated substrates, or using orientation dependent growth}	H01S5/32	H01S5/32		408
H01S5/320225	11	{polar orientation}	H01S5/32	H01S5/32		90
H01S5/32025	11	{non-polar orientation}	H01S5/32	H01S5/32		109
H01S5/320275	11	{semi-polar orientation}	H01S5/32	H01S5/32		221
H01S5/3203	11	{on non-planar substrates to create thickness or compositional variations}	H01S5/32	H01S5/32		96
H01S5/3205	10	{with an active layer having a graded composition in the growth direction}	H01S5/32	H01S5/32		56
H01S5/3206	10	{ordering or disordering the natural superlattice in ternary or quaternary materials}	H01S5/32	H01S5/32		38
H01S5/3207	11	{ordered active layer}	H01S5/32	H01S5/32		14
H01S5/3209	11	{disordered active layer}	H01S5/32	H01S5/32		23
H01S5/321	10	{having intermediate bandgap layers}	H01S5/32	H01S5/32		109
H01S5/3211	10	{characterised by special cladding layers, e.g. details on band-discontinuities}	H01S5/32	H01S5/32		736
H01S5/3213	11	{asymmetric clading layers}	H01S5/32	H01S5/32		362
H01S5/3214	11	{comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer}	H01S5/32	H01S5/32		98
H01S5/3215	11	{graded composition cladding layers}	H01S5/32	H01S5/32		144
H01S5/3216	11	{quantum well or superlattice cladding layers}	H01S5/32	H01S5/32		289
H01S5/3218	11	{specially strained cladding layers, other than for strain compensation}	H01S5/32	H01S5/32		35
H01S5/3219	11	{explicitly Al-free cladding layers}	H01S5/32	H01S5/32		18
H01S5/322	10	{type-II junctions}	H01S5/32	H01S5/32		13
H01S5/3222	10	{in AIVBVI compounds, e.g. PbSSe-laser}	H01S5/32	H01S5/32		49
H01S5/3223	10	{IV compounds}	H01S5/32	H01S5/32		53
H01S5/3224	11	{Si}	H01S5/32	H01S5/32		40
H01S5/3226	12	{SiC}	H01S5/32	H01S5/32		10
H01S5/3227	12	{porous Si}	H01S5/32	H01S5/32		10
H01S5/3228	11	{diamond}	H01S5/32	H01S5/32		6
H01S5/323	10	in AIIIBV compounds, e.g. AlGaAs-laser, {InP-based laser}	H01S5/323	H01S5/323		404
H01S5/32308	11	{emitting light at a wavelength less than 900 nm}	H01S5/323	H01S5/323		304
H01S5/32316	12	{comprising only (Al)GaAs}	H01S5/323	H01S5/323		190
H01S5/32325	12	{red laser based on InGaP}	H01S5/323	H01S5/323		282
H01S5/32333	12	{based on InGaAsP}	H01S5/323	H01S5/323		104
H01S5/32341	12	{blue laser based on GaN or GaP}	H01S5/323	H01S5/323		1420
H01S5/3235	11	{emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers}	H01S5/323	H01S5/323		153
H01S5/32358	12	{containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect}	H01S5/323	H01S5/323		30
H01S5/32366	13	{(In)GaAs with small amount of N}	H01S5/323	H01S5/323		127
H01S5/32375	13	{In(As)N with small amount of P, or In(As)P with small amount of N}	H01S5/323	H01S5/323		14
H01S5/32383	13	{small amount of Thallum (TI), e.g. GaTIP}	H01S5/323	H01S5/323		6
H01S5/32391	12	{based on In(Ga)(As)P}	H01S5/323	H01S5/323		241
H01S5/327	10	in AIIBVI compounds, e.g. ZnCdSe-laser	H01S5/327	H01S5/327		232
H01S5/34	9	comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence)	H01S5/34	H01S5/34		1015
H01S5/3401	10	{having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers}	H01S5/34	H01S5/34		396
H01S5/3402	11	{intersubband lasers, e.g. transitions within the conduction or valence bands}	H01S5/34	H01S5/34		464
H01S5/3403	10	{having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation}	H01S5/34	H01S5/34		287
H01S5/3404	11	{influencing the polarisation}	H01S5/34	H01S5/34		100
H01S5/3406	11	{including strain compensation}	H01S5/34	H01S5/34		224
H01S5/3407	10	{characterised by special barrier layers}	H01S5/34	H01S5/34		359
H01S5/3408	10	{characterised by specially shaped wells, e.g. triangular}	H01S5/34	H01S5/34		87
H01S5/3409	10	{special GRINSCH structures}	H01S5/34	H01S5/34		133
H01S5/341	10	{Structures having reduced dimensionality, e.g. quantum wires}	H01S5/34	H01S5/34		293
H01S5/3412	11	{quantum box or quantum dash}	H01S5/34	H01S5/34		562
H01S5/3413	10	{comprising partially disordered wells or barriers}	H01S5/34	H01S5/34		92
H01S5/3414	11	{by vacancy induced interdiffusion}	H01S5/34	H01S5/34		75
H01S5/3415	10	{containing details related to carrier capture times into wells or barriers}	H01S5/34	H01S5/34		68
H01S5/3416	11	{tunneling through barriers}	H01S5/34	H01S5/34		104
H01S5/3418	10	{using transitions from higher quantum levels}	H01S5/34	H01S5/34		50
H01S5/3419	11	{intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures}	H01S5/34	H01S5/34		36
H01S5/342	10	{containing short period superlattices [SPS]}	H01S5/34	H01S5/34		31
H01S5/3421	10	{layer structure of quantum wells to influence the near/far field}	H01S5/34	H01S5/34		47
H01S5/3422	10	{comprising type-II quantum wells or superlattices}	H01S5/34	H01S5/34		92
H01S5/3424	10	{comprising freestanding wells}	H01S5/34	H01S5/34		4
H01S5/3425	10	{comprising couples wells or superlattices}	H01S5/34	H01S5/34		109
H01S5/3426	10	{in AIVBVI compounds, e.g. PbSSe-laser}	H01S5/34	H01S5/34		13
H01S5/3427	10	{in IV compounds}	H01S5/34	H01S5/34		54
H01S5/3428	10	{layer orientation perpendicular to the substrate}	H01S5/34	H01S5/34		174
H01S5/343	10	in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}	H01S5/343	H01S5/343		891
H01S5/34306	11	{emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}	H01S5/343	H01S5/343		918
H01S5/34313	11	{with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}	H01S5/343	H01S5/343		1054
H01S5/3432	12	{the whole junction comprising only (AI)GaAs}	H01S5/343	H01S5/343		512
H01S5/34326	11	{with a well layer based on InGa(Al)P, e.g. red laser}	H01S5/343	H01S5/343		473
H01S5/34333	11	{with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}	H01S5/343	H01S5/343		1894
H01S5/3434	11	{with a well layer comprising at least both As and P as V-compounds}	H01S5/343	H01S5/343		385
H01S5/34346	11	{characterised by the materials of the barrier layers}	H01S5/343	H01S5/343		204
H01S5/34353	12	{based on (AI)GaAs}	H01S5/343	H01S5/343		160
H01S5/3436	12	{based on InGa(Al)P}	H01S5/343	H01S5/343		144
H01S5/34366	12	{based on InGa(Al)AS}	H01S5/343	H01S5/343		141
H01S5/34373	12	{based on InGa(Al)AsP}	H01S5/343	H01S5/343		141
H01S5/3438	12	{based on In(Al)P}	H01S5/343	H01S5/343		33
H01S5/34386	12	{explicitly Al-free}	H01S5/343	H01S5/343		41
H01S5/34393	12	{not only based on AIIIBV compounds}	H01S5/343	H01S5/343		3
H01S5/347	10	in AIIBVI compounds, e.g. ZnCdSe- laser	H01S5/347	H01S5/347		170
H01S5/36	9	comprising organic materials	H01S5/36	H01S5/36		246
H01S5/40	8	Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02&#160;-&#160;H01S5/30(H01S5/50 takes precedence)	H01S5/40	H01S5/40		544
H01S5/4006	9	{Injection locking}	H01S5/40	H01S5/40		323
H01S5/4012	9	{Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms}	H01S5/40	H01S5/40		1923
H01S5/4018	9	{Lasers electrically in series}	H01S5/40	H01S5/40		417
H01S5/4025	9	{Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence)}	H01S5/40	H01S5/40		2431
H01S5/4031	10	{Edge-emitting structures}	H01S5/40	H01S5/40		1927
H01S5/4037	11	{with active layers in more than one orientation}	H01S5/40	H01S5/40		48
H01S5/4043	11	{with vertically stacked active layers}	H01S5/40	H01S5/40		413
H01S5/405	12	{Two-dimensional arrays}	H01S5/40	H01S5/40		354
H01S5/4056	11	{emitting light in more than one direction}	H01S5/40	H01S5/40		309
H01S5/4062	11	{with an external cavity or using internal filters, e.g. Talbot filters}	H01S5/40	H01S5/40		599
H01S5/4068	11	{with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers}	H01S5/40	H01S5/40		378
H01S5/4075	10	{Beam steering}	H01S5/40	H01S5/40		216
H01S5/4081	10	{Near-or far field control}	H01S5/40	H01S5/40		88
H01S5/4087	10	{emitting more than one wavelength}	H01S5/40	H01S5/40		1912
H01S5/4093	11	{Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion}	H01S5/40	H01S5/40		483
H01S5/42	9	Arrays of surface emitting lasers	H01S5/42	H01S5/42		408
H01S5/423	10	{having a vertical cavity}	H01S5/42	H01S5/42		2121
H01S5/426	11	{Vertically stacked cavities}	H01S5/42	H01S5/42		129
H01S5/50	8	Amplifier structures not provided for in groups H01S5/02 - H01S5/30	H01S5/50	H01S5/50		1464
H01S5/5009	9	{the arrangement being polarisation-insensitive}	H01S5/50	H01S5/50		87
H01S5/5018	10	{using two or more amplifiers or multiple passes through the same amplifier}	H01S5/50	H01S5/50		99
H01S5/5027	9	{Concatenated amplifiers, i.e. amplifiers in series or cascaded}	H01S5/50	H01S5/50		163
H01S5/5036	9	{the arrangement being polarisation-selective}	H01S5/50	H01S5/50		52
H01S5/5045	9	{the arrangement having a frequency filtering function}	H01S5/50	H01S5/50		130
H01S5/5054	9	{in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing}	H01S5/50	H01S5/50		56
H01S5/5063	9	{operating above threshold}	H01S5/50	H01S5/50		51
H01S5/5072	10	{Gain clamping, i.e. stabilisation by saturation using a further mode or frequency}	H01S5/50	H01S5/50		83
H01S5/5081	9	{specifically standing wave amplifiers}	H01S5/50	H01S5/50		11
H01S5/509	9	{Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation}	H01S5/50	H01S5/50		95
H01S2301/00	7	Functional characteristics	CPCONLY	H01S2301/00		6
H01S2301/02	8	ASE (amplified spontaneous emission), noise; Reduction thereof	CPCONLY	H01S2301/02		1051
H01S2301/03	8	Suppression of nonlinear conversion, e.g. specific design to suppress for example stimulated brillouin scattering [SBS], mainly in optical fibres in combination with multimode pumping	CPCONLY	H01S2301/03		240
H01S2301/04	8	Gain spectral shaping, flattening	CPCONLY	H01S2301/04		609
H01S2301/06	8	Gain non-linearity, distortion; Compensation thereof	CPCONLY	H01S2301/06		94
H01S2301/08	8	Generation of pulses with special temporal shape or frequency spectrum	CPCONLY	H01S2301/08		196
H01S2301/085	9	solitons	CPCONLY	H01S2301/085		102
H01S2301/14	8	Semiconductor lasers with special structural design for lasing in a specific polarisation mode	CPCONLY	H01S2301/14		137
H01S2301/145	9	TM polarisation	CPCONLY	H01S2301/145		29
H01S2301/16	8	Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode	CPCONLY	H01S2301/16		81
H01S2301/163	9	Single longitudinal mode	CPCONLY	H01S2301/163		141
H01S2301/166	9	Single transverse or lateral mode	CPCONLY	H01S2301/166		495
H01S2301/17	8	Semiconductor lasers comprising special layers	CPCONLY	H01S2301/17		66
H01S2301/173	9	The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction	CPCONLY	H01S2301/173		535
H01S2301/176	9	Specific passivation layers on surfaces other than the emission facet	CPCONLY	H01S2301/176		1284
H01S2301/18	8	Semiconductor lasers with special structural design for influencing the near- or far-field	CPCONLY	H01S2301/18		610
H01S2301/185	9	for reduction of Astigmatism	CPCONLY	H01S2301/185		75
H01S2301/20	8	Lasers with a special output beam profile or cross-section, e.g. non-Gaussian	CPCONLY	H01S2301/20		141
H01S2301/203	9	with at least one hole in the intensity distribution, e.g. annular or doughnut mode	CPCONLY	H01S2301/203		74
H01S2301/206	9	Top hat profile	CPCONLY	H01S2301/206		76
H01S2302/00	7	Amplification / lasing wavelength<br><br><u>NOTE</u><br><br> In group H01S2302/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated. 	CPCONLY	H01S2302/00		278
H01S2302/02	8	THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm	CPCONLY	H01S2302/02		166
H01S2303/00	7	Pumping wavelength<br><br><u>NOTE</u><br><br> In group H01S2303/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated. 	CPCONLY	H01S2303/00		98
H01S2304/00	7	Special growth methods for semiconductor lasers	CPCONLY	H01S2304/00		433
H01S2304/02	8	MBE	CPCONLY	H01S2304/02		184
H01S2304/025	9	MOMBE	CPCONLY	H01S2304/025		10
H01S2304/04	8	MOCVD or MOVPE	CPCONLY	H01S2304/04		851
H01S2304/06	8	LPE	CPCONLY	H01S2304/06		67
H01S2304/10	8	CBE	CPCONLY	H01S2304/10		5
H01S2304/12	8	Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes	CPCONLY	H01S2304/12		298
