H10N10/00	7	Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N19/00)	H10N10/00	H10N10/00		1808
H10N10/01	8	Manufacture or treatment	H10N10/01	H10N10/01		4671
H10N10/10	8	operating with only the Peltier or Seebeck effects	H10N10/10	H10N10/10		1288
H10N10/13	9	characterised by the heat-exchanging means at the junction	H10N10/13	H10N10/13		3490
H10N10/17	9	characterised by the structure or configuration of the cell or thermocouple forming the device	H10N10/17	H10N10/17		4820
H10N10/80	8	Constructional details	H10N10/80	H10N10/80		1231
H10N10/81	9	Structural details of the junction	H10N10/81	H10N10/81		655
H10N10/813	10	the junction being separable, e.g. using a spring	H10N10/813	H10N10/813		153
H10N10/817	10	the junction being non-separable, e.g. being cemented, sintered or soldered	H10N10/817	H10N10/817		1114
H10N10/82	9	Interconnections	H10N10/82	H10N10/82		575
H10N10/85	9	Thermoelectric active materials	H10N10/85	H10N10/85		344
H10N10/851	10	comprising inorganic compositions	H10N10/851	H10N10/851		739
H10N10/852	11	comprising tellurium, selenium or sulfur	H10N10/852	H10N10/852		2128
H10N10/853	11	comprising arsenic, antimony or bismuth (H10N10/852 takes precedence)	H10N10/853	H10N10/853		1013
H10N10/854	11	comprising only metals (H10N10/852, H10N10/853 take precedence)	H10N10/854	H10N10/854		583
H10N10/855	11	comprising compounds containing boron, carbon, oxygen or nitrogen	H10N10/855	H10N10/855		833
H10N10/8552	12	{the compounds being superconducting}	H10N10/855	H10N10/855		34
H10N10/8556	11	{comprising compounds containing germanium or silicon}	H10N10/851	H10N10/855		533
H10N10/856	10	comprising organic compositions	H10N10/856	H10N10/856		720
H10N10/857	10	comprising compositions changing continuously or discontinuously inside the material	H10N10/857	H10N10/857		442
H10N15/00	7	Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00)	H10N15/00	H10N15/00		438
H10N15/10	8	Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point	H10N15/10	H10N15/10		673
H10N15/15	9	{Thermoelectric active materials}	H10N15/10	H10N15/15		270
H10N15/20	8	Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point	H10N15/20	H10N15/20		187
H10N19/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00<br><br><u>WARNING</u><br>Group H10N19/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N19/00 should be considered in order to perform a complete search.	H10N19/00	H10N19/00		655
H10N19/101	8	{Multiple thermocouples connected in a cascade arrangement}<br><br><u>WARNING</u><br>Group H10N19/101 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N19/101 should be considered in order to perform a complete search.	H10N19/00	H10N19/101		410
H10N30/00	7	Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)	H10N30/00	H10N30/00		496
H10N30/01	8	Manufacture or treatment	H10N30/01	H10N30/01		817
H10N30/02	9	Forming enclosures or casings	H10N30/02	H10N30/02		582
H10N30/03	9	Assembling devices that include piezoelectric or electrostrictive parts	H10N30/03	H10N30/03		517
H10N30/04	9	Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning	H10N30/04	H10N30/04		305
H10N30/045	10	by polarising	H10N30/045	H10N30/045		901
H10N30/05	9	Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes	H10N30/05	H10N30/05		652
H10N30/053	10	by integrally sintering piezoelectric or electrostrictive bodies and electrodes	H10N30/053	H10N30/053		585
H10N30/057	10	by stacking bulk piezoelectric or electrostrictive bodies and electrodes	H10N30/057	H10N30/057		290
H10N30/06	9	Forming electrodes or interconnections, e.g. leads or terminals	H10N30/06	H10N30/06		1441
H10N30/063	10	Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts	H10N30/063	H10N30/063		464
H10N30/067	10	Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts	H10N30/067	H10N30/067		312
H10N30/07	9	Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base	H10N30/07	H10N30/07		162
H10N30/071	10	Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate	H10N30/071	H10N30/071		132
H10N30/072	10	by laminating or bonding of piezoelectric or electrostrictive bodies	H10N30/072	H10N30/072		467
H10N30/073	11	by fusion of metals or by adhesives	H10N30/073	H10N30/073		547
H10N30/074	10	by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing	H10N30/074	H10N30/074		521
H10N30/076	11	by vapour phase deposition	H10N30/076	H10N30/076		799
H10N30/077	11	by liquid phase deposition	H10N30/077	H10N30/077		317
H10N30/078	12	by sol-gel deposition	H10N30/078	H10N30/078		554
H10N30/079	11	using intermediate layers, e.g. for growth control	H10N30/079	H10N30/079		438
H10N30/08	9	Shaping or machining of piezoelectric or electrostrictive bodies	H10N30/08	H10N30/08		218
H10N30/081	10	by coating or depositing using masks, e.g. lift-off	H10N30/081	H10N30/081		164
H10N30/082	10	by etching, e.g. lithography	H10N30/082	H10N30/082		644
H10N30/084	10	by moulding or extrusion	H10N30/084	H10N30/084		176
H10N30/085	10	by machining	H10N30/085	H10N30/085		100
H10N30/086	11	by polishing or grinding	H10N30/086	H10N30/086		201
H10N30/088	11	by cutting or dicing	H10N30/088	H10N30/088		382
H10N30/089	11	by punching	H10N30/089	H10N30/089		30
H10N30/09	9	Forming piezoelectric or electrostrictive materials	H10N30/09	H10N30/09		124
H10N30/092	10	Forming composite materials	H10N30/092	H10N30/092		711
H10N30/093	10	Forming inorganic materials	H10N30/093	H10N30/093		403
H10N30/095	11	by melting	H10N30/095	H10N30/095		62
H10N30/097	11	by sintering	H10N30/097	H10N30/097		904
H10N30/098	10	Forming organic materials	H10N30/098	H10N30/098		741
H10N30/101	8	{with electrical and mechanical input and output, e.g. having combined actuator and sensor parts}	H10N30/00	H10N30/101		358
H10N30/20	8	with electrical input and mechanical output, e.g. functioning as actuators or vibrators	H10N30/20	H10N30/20		2133
H10N30/202	9	{using longitudinal or thickness displacement combined with bending, shear or torsion displacement}	H10N30/20	H10N30/20		167
H10N30/2023	10	{having polygonal or rectangular shape}	H10N30/20	H10N30/20		310
H10N30/2027	10	{having cylindrical or annular shape}	H10N30/20	H10N30/20		89
H10N30/204	9	{using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders}	H10N30/20	H10N30/20		472
H10N30/2041	10	{Beam type}	H10N30/20	H10N30/20		271
H10N30/2042	11	{Cantilevers, i.e. having one fixed end}	H10N30/20	H10N30/20		845
H10N30/2043	12	{connected at their free ends, e.g. parallelogram type}	H10N30/20	H10N30/20		180
H10N30/2044	12	{having multiple segments mechanically connected in series, e.g. zig-zag type}	H10N30/20	H10N30/20		139
H10N30/2045	12	{adapted for in-plane bending displacement}	H10N30/20	H10N30/20		49
H10N30/2046	12	{adapted for multi-directional bending displacement}	H10N30/20	H10N30/20		66
H10N30/2047	10	{Membrane type}	H10N30/20	H10N30/20		1651
H10N30/2048	11	{having non-planar shape}	H10N30/20	H10N30/20		131
H10N30/206	9	{using only longitudinal or thickness displacement, e.g. d33 or d31 type devices}	H10N30/20	H10N30/20		623
H10N30/208	9	{using shear or torsion displacement, e.g. d15 type devices}	H10N30/20	H10N30/20		124
H10N30/30	8	with mechanical input and electrical output, e.g. functioning as generators or sensors	H10N30/30	H10N30/30		1636
H10N30/302	9	{Sensors}	H10N30/30	H10N30/30		1973
H10N30/304	9	{Beam type}	H10N30/30	H10N30/30		183
H10N30/306	10	{Cantilevers}	H10N30/30	H10N30/30		728
H10N30/308	9	{Membrane type}	H10N30/30	H10N30/30		345
H10N30/40	8	with electrical input and electrical output, e.g. functioning as transformers	H10N30/40	H10N30/40		782
H10N30/50	8	having a stacked or multilayer structure	H10N30/50	H10N30/50		2711
H10N30/501	9	{having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view}	H10N30/50	H10N30/50		113
H10N30/503	9	{having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view}	H10N30/50	H10N30/50		307
H10N30/505	10	{the cross-section being annular}	H10N30/50	H10N30/50		160
H10N30/506	9	{having a cylindrical shape and having stacking in the radial direction, e.g. coaxial or spiral type rolls}	H10N30/50	H10N30/50		118
H10N30/508	9	{adapted for alleviating internal stress, e.g. cracking control layers}	H10N30/50	H10N30/50		260
H10N30/60	8	having a coaxial cable structure	H10N30/60	H10N30/60		124
H10N30/702	8	{based on piezoelectric or electrostrictive fibres}	H10N30/00	H10N30/702		218
H10N30/704	8	{based on piezoelectric or electrostrictive films or coatings}	H10N30/00	H10N30/704		903
H10N30/706	9	{characterised by the underlying bases, e.g. substrates}	H10N30/00	H10N30/706		324
H10N30/708	10	{Intermediate layers, e.g. barrier, adhesion or growth control buffer layers}	H10N30/00	H10N30/708		623
H10N30/80	8	Constructional details	H10N30/80	H10N30/80		412
H10N30/802	9	{Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits}	H10N30/80	H10N30/80		1437
H10N30/804	10	{for piezoelectric transformers}	H10N30/80	H10N30/80		211
H10N30/85	9	Piezoelectric or electrostrictive active materials	H10N30/85	H10N30/85		520
H10N30/852	10	{Composite materials, e.g. having 1-3 or 2-2 type connectivity}	H10N30/85	H10N30/85		1033
H10N30/853	10	Ceramic compositions	H10N30/853	H10N30/853		1956
H10N30/8536	11	{Alkaline earth metal based oxides, e.g. barium titanates}	H10N30/853	H10N30/853		600
H10N30/8542	11	{Alkali metal based oxides, e.g. lithium, sodium or potassium niobates}	H10N30/853	H10N30/85		907
H10N30/8548	11	{Lead-based oxides}	H10N30/853	H10N30/85		439
H10N30/8554	12	{Lead-zirconium titanate [PZT] based}	H10N30/853	H10N30/85		1533
H10N30/8561	11	{Bismuth-based oxides}	H10N30/853	H10N30/85		451
H10N30/857	10	Macromolecular compositions	H10N30/857	H10N30/857		1891
H10N30/87	9	Electrodes or interconnections, e.g. leads or terminals	H10N30/87	H10N30/87		1844
H10N30/871	10	{Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes}	H10N30/87	H10N30/87		964
H10N30/872	10	{Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices}	H10N30/87	H10N30/87		876
H10N30/874	11	{embedded within piezoelectric or electrostrictive material, e.g. via connections}	H10N30/87	H10N30/87		242
H10N30/875	10	{Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins}	H10N30/87	H10N30/87		1156
H10N30/877	10	{Conductive materials}	H10N30/87	H10N30/87		914
H10N30/878	11	{the principal material being non-metallic, e.g. oxide or carbon based}	H10N30/87	H10N30/87		427
H10N30/88	9	Mounts; Supports; Enclosures; Casings	H10N30/88	H10N30/88		1794
H10N30/883	10	{Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings}	H10N30/88	H10N30/88		878
H10N30/886	10	{Additional mechanical prestressing means, e.g. springs}	H10N30/88	H10N30/88		486
H10N35/00	7	Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)	H10N35/00	H10N35/00		486
H10N35/01	8	Manufacture or treatment	H10N35/01	H10N35/01		251
H10N35/101	8	{with mechanical input and electrical output, e.g. generators, sensors}	H10N35/00	H10N35/101		286
H10N35/80	8	Constructional details	H10N35/80	H10N35/80		162
H10N35/85	9	Magnetostrictive active materials	H10N35/85	H10N35/85		388
H10N39/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 &#8211; H10N35/00<br><br><u>WARNING</u><br>Group H10N39/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N39/00 should be considered in order to perform a complete search.	H10N39/00	H10N39/00		860
H10N50/00	7	Galvanomagnetic devices (Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00)	H10N50/00	H10N50/00		86
H10N50/01	8	Manufacture or treatment	H10N50/01	H10N50/01		5786
H10N50/10	8	Magnetoresistive devices	H10N50/10	H10N50/10		8551
H10N50/20	8	Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10)	H10N50/20	H10N50/20		445
H10N50/80	8	Constructional details	H10N50/80	H10N50/80		4167
H10N50/85	9	Materials of the active region	H10N50/85	H10N50/85		3988
H10N52/00	7	Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)	H10N52/00	H10N52/00		752
H10N52/01	8	Manufacture or treatment	H10N52/01	H10N52/01		739
H10N52/101	8	{Semiconductor Hall-effect devices}	H10N52/00	H10N52/101		870
H10N52/80	8	Constructional details	H10N52/80	H10N52/80		955
H10N52/85	9	Materials of the active region	H10N52/85	H10N52/85		193
H10N59/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00(MRAM devices H10B61/00)<br><br><u>WARNING</u><br>Group H10N59/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N59/00 should be considered in order to perform a complete search.	H10N59/00	H10N59/00		664
H10N60/00	7	Superconducting devices (integrated devices or assemblies of multiple devices H10N69/00)	H10N60/00	H10N60/00		445
H10N60/01	8	Manufacture or treatment	H10N60/01	H10N60/01		978
H10N60/0128	9	{of composite superconductor filaments (comprising copper oxide H10N60/0268)}	H10N60/01	H10N60/01		242
H10N60/0156	9	{of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium}	H10N60/01	H10N60/01		296
H10N60/0184	9	{of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn}	H10N60/01	H10N60/01		450
H10N60/0212	9	{of devices comprising molybdenum chalcogenides}	H10N60/01	H10N60/0212		22
H10N60/0241	9	{of devices comprising nitrides or carbonitrides}	H10N60/01	H10N60/0241		124
H10N60/0268	9	{of devices comprising copper oxide}	H10N60/01	H10N60/0268		727
H10N60/0296	10	{Processes for depositing or forming copper oxide superconductor layers}	H10N60/01	H10N60/0296		176
H10N60/0324	11	{from a solution}	H10N60/01	H10N60/0324		195
H10N60/0352	11	{from a suspension or slurry, e.g. screen printing or doctor blade casting}	H10N60/01	H10N60/0352		103
H10N60/0381	11	{by evaporation, e.g. MBE}	H10N60/01	H10N60/0381		105
H10N60/0408	11	{by sputtering}	H10N60/01	H10N60/0408		165
H10N60/0436	11	{by chemical vapour deposition [CVD]}	H10N60/01	H10N60/0436		62
H10N60/0464	12	{by metalloorganic chemical vapour deposition [MOCVD]}	H10N60/01	H10N60/0464		80
H10N60/0492	11	{by thermal spraying, e.g. plasma deposition}	H10N60/01	H10N60/0492		45
H10N60/0521	11	{by pulsed laser deposition, e.g. laser sputtering}	H10N60/01	H10N60/0521		173
H10N60/0548	11	{by deposition and subsequent treatment, e.g. oxidation of pre-deposited material}	H10N60/01	H10N60/0548		196
H10N60/0576	11	{characterised by the substrate}	H10N60/01	H10N60/0576		208
H10N60/0604	12	{Monocrystalline substrates, e.g. epitaxial growth}	H10N60/01	H10N60/0604		125
H10N60/0632	12	{Intermediate layers, e.g. for growth control}	H10N60/01	H10N60/0632		379
H10N60/0661	10	{Processes performed after copper oxide formation, e.g. patterning}	H10N60/01	H10N60/0661		331
H10N60/0688	11	{Etching}	H10N60/01	H10N60/0688		119
H10N60/0716	11	{Passivating}	H10N60/01	H10N60/0716		118
H10N60/0744	10	{Manufacture or deposition of electrodes}	H10N60/01	H10N60/0744		89
H10N60/0772	10	{Processes including the use of non-gaseous precursors}	H10N60/01	H10N60/0772		105
H10N60/0801	10	{Manufacture or treatment of filaments or composite wires}	H10N60/01	H10N60/0801		692
H10N60/0828	10	{Introducing flux pinning centres}	H10N60/01	H10N60/0828		117
H10N60/0856	9	{of devices comprising metal borides, e.g. MgB2}	H10N60/01	H10N60/0856		175
H10N60/0884	9	{Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays}	H10N60/01	H10N60/0884		176
H10N60/0912	9	{of Josephson-effect devices}	H10N60/01	H10N60/0912		964
H10N60/0941	10	{comprising high-Tc ceramic materials}	H10N60/01	H10N60/0941		223
H10N60/10	8	Junction-based devices	H10N60/10	H10N60/10		249
H10N60/11	9	{Single-electron tunnelling devices}	H10N60/10	H10N60/11		104
H10N60/12	9	Josephson-effect devices	H10N60/12	H10N60/12		1385
H10N60/124	10	{comprising high-Tc ceramic materials}	H10N60/12	H10N60/12		296
H10N60/126	10	{comprising metal borides, e.g. MgB2}	H10N60/12	H10N60/12		14
H10N60/128	9	{having three or more electrodes, e.g. transistor-like structures}	H10N60/10	H10N60/12		368
H10N60/20	8	Permanent superconducting devices	H10N60/20	H10N60/20		523
H10N60/202	9	{comprising metal borides, e.g. MgB2}	H10N60/20	H10N60/20		90
H10N60/203	9	{comprising high-Tc ceramic materials}	H10N60/20	H10N60/20		596
H10N60/205	9	{having three or more electrodes, e.g. transistor-like structures&#160; (H10N60/128&#160;takes precedence)}	H10N60/20	H10N60/20		17
H10N60/207	10	{Field effect devices}	H10N60/20	H10N60/20		96
H10N60/208	9	{based on Abrikosov vortices}	H10N60/20	H10N60/20		15
H10N60/30	8	Devices switchable between superconducting and normal states	H10N60/30	H10N60/30		380
H10N60/35	9	Cryotrons	H10N60/35	H10N60/35		149
H10N60/355	10	Power cryotrons	H10N60/355	H10N60/355		190
H10N60/80	8	Constructional details	H10N60/80	H10N60/80		530
H10N60/805	9	{for Josephson-effect devices}	H10N60/80	H10N60/80		647
H10N60/81	9	Containers; Mountings	H10N60/81	H10N60/81		203
H10N60/815	10	{for Josephson-effect devices}	H10N60/81	H10N60/81		147
H10N60/82	9	Current path	H10N60/82	H10N60/82		157
H10N60/83	9	Element shape	H10N60/83	H10N60/83		106
H10N60/84	9	Switching means for devices switchable between superconducting and normal states	H10N60/84	H10N60/84		262
H10N60/85	9	Superconducting active materials	H10N60/85	H10N60/85		593
H10N60/851	10	{Organic superconductors}	H10N60/85	H10N60/85		49
H10N60/853	11	{Fullerene superconductors, e.g. soccer ball-shaped allotropes of carbon, e.g. C60 or C94}	H10N60/85	H10N60/85		13
H10N60/855	10	{Ceramic superconductors}	H10N60/85	H10N60/85		224
H10N60/857	11	{comprising copper oxide}	H10N60/85	H10N60/85		747
H10N60/858	12	{having multilayered structures, e.g. superlattices}	H10N60/85	H10N60/85		81
H10N60/99	8	{Alleged superconductivity}	H10N60/00	H10N60/99		94
H10N69/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00<br><br><u>WARNING</u><br>Group H10N69/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N69/00 should be considered in order to perform a complete search.	H10N69/00	H10N69/00		991
H10N70/00	7	Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N79/00)	H10N70/00	H10N70/00		670
H10N70/011	8	{Manufacture or treatment of multistable switching devices}	H10N70/00	H10N70/011		3299
H10N70/021	9	{Formation of switching materials, e.g. deposition of layers}	H10N70/00	H10N70/021		1674
H10N70/023	10	{by chemical vapor deposition, e.g. MOCVD, ALD}	H10N70/00	H10N70/023		946
H10N70/026	10	{by physical vapor deposition, e.g. sputtering}	H10N70/00	H10N70/026		1322
H10N70/028	10	{by conversion of electrode material, e.g. oxidation}	H10N70/00	H10N70/028		257
H10N70/041	9	{Modification of switching materials after formation, e.g. doping (shaping H10N70/061)}	H10N70/00	H10N70/041		669
H10N70/043	10	{by implantation}	H10N70/00	H10N70/043		252
H10N70/046	10	{by diffusion, e.g. photo-dissolution}	H10N70/00	H10N70/046		185
H10N70/061	9	{Shaping switching materials}	H10N70/00	H10N70/061		436
H10N70/063	10	{by etching of pre-deposited switching material layers, e.g. lithography}	H10N70/00	H10N70/063		2222
H10N70/066	10	{by filling of openings, e.g. damascene method}	H10N70/00	H10N70/066		1284
H10N70/068	10	{by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers}	H10N70/00	H10N70/068		440
H10N70/10	8	Solid-state travelling-wave devices	H10N70/10	H10N70/10		69
H10N70/151	8	{Charge density wave transport devices}	H10N70/00	H10N70/151		6
H10N70/20	8	Multistable switching devices, e.g. memristors	H10N70/20	H10N70/20		3881
H10N70/231	9	{based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}	H10N70/20	H10N70/231		5075
H10N70/235	10	{between different crystalline phases, e.g. cubic and hexagonal}	H10N70/20	H10N70/235		258
H10N70/24	9	{based on migration or redistribution of ionic species, e.g. anions, vacancies}	H10N70/20	H10N70/24		2245
H10N70/245	10	{the species being metal cations, e.g. programmable metallization cells}	H10N70/20	H10N70/245		1601
H10N70/25	9	{based on bulk electronic defects, e.g. trapping of electrons}	H10N70/20	H10N70/25		226
H10N70/253	9	{having three or more electrodes, e.g. transistor-like devices}	H10N70/20	H10N70/253		668
H10N70/257	9	{having switching assisted by radiation or particle beam, e.g. optically controlled devices}	H10N70/20	H10N70/257		192
H10N70/801	8	{Constructional details of multistable switching devices}	H10N70/00	H10N70/801		1121
H10N70/821	9	{Device geometry}	H10N70/00	H10N70/821		632
H10N70/823	10	{adapted for essentially horizontal current flow, e.g. bridge type devices}	H10N70/00	H10N70/823		1412
H10N70/826	10	{adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}	H10N70/00	H10N70/826		7042
H10N70/8265	11	{on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices}	H10N70/00	H10N70/8265		440
H10N70/828	10	{Current flow limiting means within the switching material region, e.g. constrictions}	H10N70/00	H10N70/828		433
H10N70/841	9	{Electrodes}	H10N70/00	H10N70/841		2962
H10N70/8413	10	{adapted for resistive heating}	H10N70/00	H10N70/8413		1145
H10N70/8416	10	{adapted for supplying ionic species}	H10N70/00	H10N70/8416		801
H10N70/8418	10	{adapted for focusing electric field or current, e.g. tip-shaped}	H10N70/00	H10N70/8418		442
H10N70/861	9	{Thermal details}	H10N70/00	H10N70/861		200
H10N70/8613	10	{Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel}	H10N70/00	H10N70/8613		387
H10N70/8616	10	{Thermal insulation means}	H10N70/00	H10N70/8616		264
H10N70/881	9	{Switching materials}	H10N70/00	H10N70/881		1076
H10N70/882	10	{Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}	H10N70/00	H10N70/882		1122
H10N70/8822	11	{Sulfides, e.g. CuS}	H10N70/00	H10N70/8822		635
H10N70/8825	11	{Selenides, e.g. GeSe}	H10N70/00	H10N70/8825		1494
H10N70/8828	11	{Tellurides, e.g. GeSbTe}	H10N70/00	H10N70/8828		3690
H10N70/883	10	{Oxides or nitrides}	H10N70/00	H10N70/883		1662
H10N70/8833	11	{Binary metal oxides, e.g. TaOx}	H10N70/00	H10N70/8833		4011
H10N70/8836	11	{Complex metal oxides, e.g. perovskites, spinels}	H10N70/00	H10N70/8836		1395
H10N70/884	10	{based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}	H10N70/00	H10N70/884		826
H10N70/8845	11	{Carbon or carbides}	H10N70/00	H10N70/8845		400
H10N79/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00(ReRAM devices H10B63/00; PCRAM devices H10B63/10)<br><br><u>WARNING</u><br>Group H10N79/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N79/00 should be considered in order to perform a complete search.	H10N79/00	H10N79/00		148
H10N80/00	7	Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N89/00)	H10N80/00	H10N80/00		260
H10N80/01	8	{Manufacture or treatment}	H10N80/00	H10N80/01		45
H10N80/10	8	Gunn-effect devices	H10N80/10	H10N80/10		71
H10N80/103	9	{controlled by electromagnetic radiation}	H10N80/10	H10N80/10		29
H10N80/107	9	{Gunn diodes}	H10N80/10	H10N80/10		108
H10N89/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N80/00<br><br><u>WARNING</u><br>Group H10N89/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N89/00 should be considered in order to perform a complete search.	H10N89/00	H10N89/00		27
H10N89/02	8	{Gunn-effect integrated devices}<br><br><u>WARNING</u><br>Group H10N89/02 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10N89/02 should be considered in order to perform a complete search.	H10N89/00	H10N89/02		10
H10N97/00	7	Electric solid-state thin-film or thick-film devices, not otherwise provided for	H10N97/00	H10N97/00		1124
H10N99/00	7	Subject matter not provided for in other groups of this subclass	H10N99/00	H10N99/00		200
H10N99/03	8	{Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices}	H10N99/00	H10N99/03		142
H10N99/05	8	{Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors}	H10N99/00	H10N99/05		183
