H10D1/00	7	Resistors, capacitors or inductors<br><br><u>NOTE</u><br><br>This group covers:<br>individual inorganic resistors or capacitors having potential barriers;<br>individual resistors, capacitors or inductors having no potential barriers, and specially adapted for integration with other semiconductor components.	H10D1/00	H10D1/00		539
H10D1/01	8	{Manufacture or treatment}<br><br><u>WARNING</u><br>Group H10D1/01 is incomplete pending reclassification of documents from group H10D8/051.<br>Groups H10D8/051 and H10D1/01 should be considered in order to perform a complete search.	H10D1/00	H10D1/01		19
H10D1/021	9	{of resistors having no potential barriers}	H10D1/00	H10D1/021		12
H10D1/025	9	{of resistors having potential barriers}<br><br><u>WARNING</u><br>Group H10D1/025 is incomplete pending reclassification of documents from groups H10D8/051 and H10D48/021.<br>Groups H10D8/051, H10D48/021 and H10D1/025 should be considered in order to perform a complete search.	H10D1/00	H10D1/025		97
H10D1/041	9	{of capacitors having no potential barriers}	H10D1/00	H10D1/041		209
H10D1/042	10	{using deposition processes to form electrode extensions}	H10D1/00	H10D1/042		4824
H10D1/043	10	{using patterning processes to form electrode extensions, e.g. etching}	H10D1/00	H10D1/043		1173
H10D1/045	9	{of capacitors having potential barriers, e.g. varactors}<br><br><u>WARNING</u><br>Groups H10D1/045 - H10D1/048 are incomplete pending reclassification of documents from groups H10D8/051 and H10D48/021.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D1/00	H10D1/045		170
H10D1/047	10	{of conductor-insulator-semiconductor capacitors, e.g. trench capacitors}	H10D1/00	H10D1/047		1212
H10D1/048	11	{having PN junctions, e.g. hybrid capacitors with MOS control}	H10D1/00	H10D1/048		47
H10D1/20	8	Inductors	H10D1/20	H10D1/20		2292
H10D1/40	8	Resistors<br><br><u>WARNING</u><br>Group H10D1/40 is impacted by reclassification into group H10D48/38.<br>Groups H10D1/40 and H10D48/38 should be considered in order to perform a complete search.	H10D1/40	H10D1/40		425
H10D1/43	9	Resistors having PN junctions	H10D1/43	H10D1/43		595
H10D1/47	9	Resistors having no potential barriers	H10D1/47	H10D1/47		2356
H10D1/472	10	{having an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]}	H10D1/47	H10D1/47		28
H10D1/474	10	{comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides}	H10D1/47	H10D1/47		609
H10D1/476	10	{comprising conducting organic materials, e.g. conducting polymers}	H10D1/47	H10D1/47		16
H10D1/60	8	Capacitors	H10D1/60	H10D1/60		27
H10D1/62	9	Capacitors having potential barriers	H10D1/62	H10D1/62		320
H10D1/64	10	Variable-capacitance diodes, e.g. varactors&#160;	H10D1/64	H10D1/64		709
H10D1/66	10	Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors	H10D1/66	H10D1/66		1266
H10D1/665	11	{Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors}	H10D1/66	H10D1/66		920
H10D1/68	9	Capacitors having no potential barriers	H10D1/68	H10D1/68		5769
H10D1/682	10	{having dielectrics comprising perovskite structures}	H10D1/68	H10D1/68		3122
H10D1/684	11	{the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers}	H10D1/68	H10D1/68		1126
H10D1/688	11	{comprising barrier layers to prevent diffusion of hydrogen or oxygen}	H10D1/68	H10D1/68		359
H10D1/692	10	{Electrodes}	H10D1/68	H10D1/692		4746
H10D1/694	11	{comprising noble metals or noble metal oxides}	H10D1/68	H10D1/694		1652
H10D1/696	11	{comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}	H10D1/68	H10D1/696		3181
H10D1/711	11	{having non-planar surfaces, e.g. formed by texturisation}	H10D1/68	H10D1/711		632
H10D1/712	12	{being rough surfaces, e.g. using hemispherical grains}	H10D1/68	H10D1/712		1845
H10D1/714	12	{having horizontal extensions}	H10D1/68	H10D1/714		1120
H10D1/716	12	{having vertical extensions}	H10D1/68	H10D1/716		4469
H10D8/00	7	Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.<br><br><u>WARNING</u><br>Group H10D8/00 is impacted by reclassification into group H10D8/20.<br>Groups H10D8/00 and H10D8/20 should be considered in order to perform a complete search.	H10D8/00	H10D8/00		4244
H10D8/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Groups H10D8/01, H10D8/021, H10D8/022, H10D8/024, H10D8/041, H10D8/045 and H10D8/055 are incomplete pending reclassification of documents from groups H10D8/043, H10D8/051 and H10D48/021.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D8/01	H10D8/01		1114
H10D8/021	9	{of breakdown diodes}	H10D8/01	H10D8/021		60
H10D8/022	10	{of Zener diodes}	H10D8/01	H10D8/022		245
H10D8/024	10	{of Avalanche diodes}	H10D8/01	H10D8/024		77
H10D8/041	9	{of multilayer diodes}	H10D8/01	H10D8/041		167
H10D8/043	9	{of planar diodes}<br><br><u>WARNING</u><br>Group H10D8/043 is incomplete pending reclassification of documents from groups H10D8/051 and H10D48/021. <br>Group H10D8/043 is also impacted by reclassification into groups H10D8/01, H10D8/021 - H10D8/024, H10D8/041, H10D8/045 and H10D8/055.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D8/01	H10D8/043		519
H10D8/045	9	{of PN junction diodes}	H10D8/01	H10D8/045		1060
H10D8/051	9	{of Schottky diodes}<br><br><u>WARNING</u><br>Group H10D8/051 is incomplete pending reclassification of documents from group H10D48/021. <br>Group H10D8/051 is also impacted by reclassification into groups H10D1/01, H10D1/025, H10D1/045 - H10D1/048, H10D8/01, H10D8/021 - H10D8/024, H10D8/041, H10D8/043, H10D8/045, H10D8/053, H10D8/055 and H10D48/021.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D8/01	H10D8/051		3069
H10D8/053	9	{of heterojunction diodes or of tunnel diodes}<br><br><u>WARNING</u><br>Group H10D8/053 is incomplete pending reclassification of documents from groups H10D8/051 and H10D48/021.<br>Groups H10D8/051, H10D48/021 and H10D8/053 should be considered in order to perform a complete search.	H10D8/01	H10D8/053		207
H10D8/055	9	{of transit-time diodes, e.g. IMPATT or TRAPATT diodes}	H10D8/01	H10D8/055		20
H10D8/20	8	Breakdown diodes, e.g. avalanche diodes<br><br><u>WARNING</u><br>Group H10D8/20 is incomplete pending reclassification of documents from group H10D8/00.<br>Groups H10D8/00 and H10D8/20 should be considered in order to perform a complete search.	H10D8/20	H10D8/20		198
H10D8/25	9	Zener diodes&#160;	H10D8/25	H10D8/25		1107
H10D8/30	8	Point-contact diodes	H10D8/30	H10D8/30		17
H10D8/40	8	Transit-time diodes, e.g. IMPATT or TRAPATT diodes&#160;	H10D8/40	H10D8/40		142
H10D8/411	8	{PN diodes having planar bodies}	H10D8/00	H10D8/411		1569
H10D8/422	8	{PN diodes having the PN junctions in mesas}	H10D8/00	H10D8/422		1205
H10D8/50	8	PIN diodes&#160;	H10D8/50	H10D8/50		1418
H10D8/60	8	Schottky-barrier diodes&#160;	H10D8/60	H10D8/60		5353
H10D8/605	9	{of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]}	H10D8/60	H10D8/60		621
H10D8/70	8	Tunnel-effect diodes	H10D8/70	H10D8/70		325
H10D8/75	9	Tunnel-effect PN diodes, e.g. Esaki diodes	H10D8/75	H10D8/75		42
H10D8/755	9	{Resonant tunneling diodes [RTD]}	H10D8/75	H10D8/75		194
H10D8/80	8	PNPN diodes, e.g. Shockley diodes or break-over diodes	H10D8/80	H10D8/80		744
H10D8/812	8	{Charge-trapping diodes}	H10D8/00	H10D8/812		72
H10D8/825	8	{Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes}	H10D8/00	H10D8/825		123
H10D10/00	7	Bipolar junction transistors [BJT]<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D10/00	H10D10/00		1677
H10D10/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Group H10D10/01 is incomplete pending reclassification of documents from group H10D48/031. <br>Group H10D10/01 is also impacted by reclassification into groups H10D10/051 - H10D10/058.<br>Groups H10D48/031, H10D10/01 and H10D10/051 - H10D10/058 should be considered in order to perform a complete search.	H10D10/01	H10D10/01		687
H10D10/021	9	{of heterojunction BJTs [HBT]}<br><br><u>WARNING</u><br>Group H10D10/021 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D10/021 should be considered in order to perform a complete search.	H10D10/01	H10D10/021		1859
H10D10/031	9	{of Schottky BJTs}<br><br><u>WARNING</u><br>Group H10D10/031 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D10/031 should be considered in order to perform a complete search.	H10D10/01	H10D10/031		25
H10D10/041	9	{of thin-film BJTs&#160; (of heterojunction BJTs H10D10/021)}<br><br><u>WARNING</u><br>Group H10D10/041 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D10/041 should be considered in order to perform a complete search.	H10D10/01	H10D10/041		211
H10D10/051	9	{of vertical BJTs (of heterojunction BJTs H10D10/021; of Schottky BJTs H10D10/031; of thin film BJTs H10D10/041)}<br><br><u>WARNING</u><br>Groups H10D10/051, H10D10/056 and H10D10/058 are incomplete pending reclassification of documents from groups H10D10/01 and H10D48/031.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D10/01	H10D10/051		1296
H10D10/052	10	{of inverted vertical BJTs}<br><br><u>WARNING</u><br>Group H10D10/052 is incomplete pending reclassification of documents from groups H10D10/01 and H10D48/031. <br>Group H10D10/052 is also impacted by reclassification into group H10D10/054.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D10/01	H10D10/052		23
H10D10/054	10	{Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions}<br><br><u>WARNING</u><br>Group H10D10/054 is incomplete pending reclassification of documents from groups H10D10/01, H10D10/052 and H10D48/031.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D10/01	H10D10/054		359
H10D10/056	10	{of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs}	H10D10/01	H10D10/056		95
H10D10/058	11	{having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters}	H10D10/01	H10D10/058		86
H10D10/061	9	{of lateral BJTs&#160; (of heterojunction BJTs H10D10/021; of thin film BJTs H10D10/041)}<br><br><u>WARNING</u><br>Group H10D10/061 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D10/061 should be considered in order to perform a complete search.	H10D10/01	H10D10/061		503
H10D10/211	8	{Point-contact BJTs}	H10D10/00	H10D10/211		2
H10D10/221	8	{Schottky barrier BJTs}	H10D10/00	H10D10/221		48
H10D10/231	8	{Tunnel BJTs}	H10D10/00	H10D10/231		103
H10D10/241	8	{Avalanche BJTs}	H10D10/00	H10D10/241		24
H10D10/311	8	{Thin-film BJTs}	H10D10/00	H10D10/311		356
H10D10/40	8	Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)}	H10D10/40	H10D10/40		1261
H10D10/421	9	{having both emitter-base and base-collector junctions ending at the same surface of the body}	H10D10/40	H10D10/421		665
H10D10/441	9	{having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body}	H10D10/40	H10D10/441		281
H10D10/461	9	{Inverted vertical BJTs}	H10D10/40	H10D10/461		71
H10D10/60	8	Lateral BJTs	H10D10/60	H10D10/60		1075
H10D10/80	8	Heterojunction BJTs	H10D10/80	H10D10/80		648
H10D10/821	9	{Vertical heterojunction BJTs}	H10D10/80	H10D10/821		1396
H10D10/841	10	{having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base}	H10D10/80	H10D10/841		48
H10D10/861	10	{having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon}	H10D10/80	H10D10/861		110
H10D10/881	10	{Resonant tunnelling transistors}	H10D10/80	H10D10/881		94
H10D10/891	10	{comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors}	H10D10/80	H10D10/891		608
H10D12/00	7	Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D12/00	H10D12/00		846
H10D12/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Group H10D12/01 is incomplete pending reclassification of documents from groups H10D12/031 and H10D48/031. <br>Group H10D12/01 is also impacted by reclassification into group H10D12/031.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D12/01	H10D12/01		1157
H10D12/021	9	{of gated diodes, e.g. field-controlled diodes [FCD]}<br><br><u>WARNING</u><br>Group H10D12/021 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D12/021 should be considered in order to perform a complete search.	H10D12/01	H10D12/021		490
H10D12/031	9	{of IGBTs}<br><br><u>WARNING</u><br>Group H10D12/031 is incomplete pending reclassification of documents from groups H10D12/01 and H10D48/031. <br>Group H10D12/031 is also impacted by reclassification into groups H10D12/01, H10D12/035, H10D12/038, H10D18/01 - H10D18/031 and H10D30/028 - H10D30/0297.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D12/01	H10D12/031		3555
H10D12/032	10	{of vertical IGBTs}<br><br><u>WARNING</u><br>Group H10D12/032 is incomplete pending reclassification of documents from group H10D48/031.<br>Groups H10D48/031 and H10D12/032 should be considered in order to perform a complete search.	H10D12/01	H10D12/032		1408
H10D12/035	11	{Etching a recess in the emitter region&#160; (having a recessed gate H10D12/038)}<br><br><u>WARNING</u><br>Group H10D12/035 is incomplete pending reclassification of documents from groups H10D12/031 and H10D48/031.<br>Groups H10D12/031, H10D48/031 and H10D12/035 should be considered in order to perform a complete search.	H10D12/01	H10D12/035		276
H10D12/038	11	{having a recessed gate, e.g. trench-gate IGBTs}<br><br><u>WARNING</u><br>Group H10D12/038 is incomplete pending reclassification of documents from groups H10D12/031 and H10D48/031.<br>Groups H10D12/031, H10D48/031 and H10D12/038 should be considered in order to perform a complete search.	H10D12/01	H10D12/038		2833
H10D12/211	8	{Gated diodes}<br><br><u>WARNING</u><br>Group H10D12/211 is impacted by reclassification into groups H10D18/40 and H10D18/60 - H10D18/655.<br>Groups H10D12/211, H10D18/40 and H10D18/60 - H10D18/655 should be considered in order to perform a complete search.	H10D12/00	H10D12/211		1157
H10D12/212	9	{having PN junction gates, e.g. field controlled diodes}	H10D12/00	H10D12/212		259
H10D12/411	8	{Insulated-gate bipolar transistors [IGBT]}<br><br><u>WARNING</u><br>Group H10D12/411 is impacted by reclassification into groups H10D12/415, H10D12/416, H10D12/417, H10D12/418 and H10D84/161.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D12/00	H10D12/411		2086
H10D12/415	9	{having edge termination structures}<br><br><u>WARNING</u><br>Group H10D12/415 is incomplete pending reclassification of documents from group H10D12/411.<br>Groups H10D12/411 and H10D12/415 should be considered in order to perform a complete search.	H10D12/00	H10D12/415		137
H10D12/416	9	{Bidirectional devices, e.g. trench-gate IGBTs having additional gates at the anode side}<br><br><u>WARNING</u><br>Group H10D12/416 is incomplete pending reclassification of documents from group H10D12/411.<br>Groups H10D12/411 and H10D12/416 should be considered in order to perform a complete search.	H10D12/00	H10D12/416		17
H10D12/417	9	{having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region}<br><br><u>WARNING</u><br>Group H10D12/417 is incomplete pending reclassification of documents from group H10D12/411.<br>Groups H10D12/411 and H10D12/417 should be considered in order to perform a complete search.	H10D12/00	H10D12/417		105
H10D12/418	9	{having a drift region having a doping concentration that is higher at the emitter side relative to other parts of the drift region}<br><br><u>WARNING</u><br>Group H10D12/418 is incomplete pending reclassification of documents from group H10D12/411.<br>Groups H10D12/411 and H10D12/418 should be considered in order to perform a complete search.	H10D12/00	H10D12/418		87
H10D12/421	9	{on insulating layers or insulating substrates, e.g. thin-film IGBTs}<br><br><u>WARNING</u><br>Group H10D12/421 is incomplete pending reclassification of documents from group H10D12/491.<br>Groups H10D12/491 and H10D12/421 should be considered in order to perform a complete search.	H10D12/00	H10D12/421		405
H10D12/441	9	{Vertical IGBTs}	H10D12/00	H10D12/441		2901
H10D12/461	10	{having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions}<br><br><u>WARNING</u><br>Groups H10D12/461 and H10D12/481 are incomplete pending reclassification of documents from group H10D12/491.<br>Groups H10D12/491, H10D12/461 and H10D12/481 should be considered in order to perform a complete search.	H10D12/00	H10D12/461		509
H10D12/481	11	{having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}	H10D12/00	H10D12/481		4582
H10D12/491	10	{having both emitter contacts and collector contacts in the same substrate side}<br><br><u>WARNING</u><br>Group H10D12/491 is impacted by reclassification into groups H10D12/421 and H10D12/461 - H10D12/481.<br>Groups H10D12/491, H10D12/421 and H10D12/461 - H10D12/481 should be considered in order to perform a complete search.	H10D12/00	H10D12/491		473
H10D18/00	7	Thyristors<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D18/00	H10D18/00		1141
H10D18/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Groups H10D18/01 - H10D18/031 are incomplete pending reclassification of documents from groups H10D12/031 and H10D48/031.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D18/01	H10D18/01		415
H10D18/021	9	{of bidirectional devices, e.g. triacs}	H10D18/01	H10D18/021		77
H10D18/031	9	{of lateral or planar thyristors}	H10D18/01	H10D18/031		110
H10D18/211	8	{having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing}	H10D18/00	H10D18/211		141
H10D18/221	8	{having amplifying gate structures, e.g. cascade configurations}	H10D18/00	H10D18/221		242
H10D18/241	8	{Asymmetrical thyristors}	H10D18/00	H10D18/241		66
H10D18/251	8	{Lateral thyristors}	H10D18/00	H10D18/251		588
H10D18/40	8	with turn-on by field effect&#160;<br><br><u>WARNING</u><br>Group H10D18/40 is incomplete pending reclassification of documents from group H10D12/211.<br>Groups H10D12/211 and H10D18/40 should be considered in order to perform a complete search.	H10D18/40	H10D18/40		422
H10D18/60	8	Gate-turn-off&#160;devices&#160;<br><br><u>WARNING</u><br>Groups H10D18/60 - H10D18/655 are incomplete pending reclassification of documents from group H10D12/211.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D18/60	H10D18/60		611
H10D18/65	9	with turn-off by field effect&#160;	H10D18/65	H10D18/65		93
H10D18/655	10	{produced by insulated gate structures}	H10D18/65	H10D18/65		465
H10D18/80	8	Bidirectional&#160;devices, e.g. triacs&#160;	H10D18/80	H10D18/80		547
H10D30/00	7	Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.<br><br><u>WARNING</u><br>Group H10D30/00 is impacted by reclassification into group H10D30/40.<br>Groups H10D30/00 and H10D30/40 should be considered in order to perform a complete search.	H10D30/00	H10D30/00		985
H10D30/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Group H10D30/01 is impacted by reclassification into groups H10D30/012, H10D30/014, H10D30/015, H10D30/017, H10D30/019 - H10D30/0198, H10D30/021 - H10D30/0415, H10D30/051 - H10D30/0516 and H10D30/061 - H10D30/0618.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		1493
H10D30/012	9	{of static induction transistors [SIT], e.g. permeable base transistors [PBT]}<br><br><u>WARNING</u><br>Group H10D30/012 is incomplete pending reclassification of documents from group H10D30/01.<br>Groups H10D30/01 and H10D30/012 should be considered in order to perform a complete search.	H10D30/01	H10D30/01		152
H10D30/014	9	{of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors}<br><br><u>WARNING</u><br>Group H10D30/014 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/014 is also impacted by reclassification into groups H10D30/019 - H10D30/0198.<br>Groups H10D30/01, H10D30/014 and H10D30/019 - H10D30/0198 should be considered in order to perform a complete search.	H10D30/01	H10D30/01		6269
H10D30/015	9	{of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}<br><br><u>WARNING</u><br>Group H10D30/015 is incomplete pending reclassification of documents from group H10D30/01.<br>Groups H10D30/01 and H10D30/015 should be considered in order to perform a complete search.	H10D30/01	H10D30/01		7495
H10D30/017	9	{of FETs having two-dimensional material channels, e.g. TMD FETs}<br><br><u>WARNING</u><br>Group H10D30/017 is incomplete pending reclassification of documents from groups H10D30/01, H10D30/031 and H10D30/0323.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		100
H10D30/019	9	{of FETs having stacked nanowire, nanosheet or nanoribbon channels}<br><br><u>WARNING</u><br>Group H10D30/019 is incomplete pending reclassification of documents from groups H10D30/01, H10D30/014, H10D30/024, H10D30/0241, H10D30/031, H10D30/0321, H10D30/0323 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		504
H10D30/0191	10	{forming stacked channels, e.g. changing their shapes or sizes}<br><br><u>WARNING</u><br>Groups H10D30/0191 - H10D30/0194 are incomplete pending reclassification of documents from groups H10D30/01, H10D30/014, H10D30/024, H10D30/0241, H10D30/0245, H10D30/031, H10D30/0321, H10D30/0323 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		148
H10D30/0193	11	{by modifying properties of the stacked channels}	H10D30/01	H10D30/01		65
H10D30/0194	11	{the stacked channels having different properties}	H10D30/01	H10D30/01		82
H10D30/0195	10	{forming inner spacers between adjacent channels, e.g. changing their shapes or sizes}<br><br><u>WARNING</u><br>Groups H10D30/0195 - H10D30/0197 are incomplete pending reclassification of documents from groups H10D30/01, H10D30/014, H10D30/024, H10D30/031, H10D30/0321, H10D30/0323 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		107
H10D30/0196	11	{by modifying properties of the inner spacers}	H10D30/01	H10D30/01		28
H10D30/0197	11	{the inner spacers having different properties}	H10D30/01	H10D30/01		22
H10D30/0198	10	{forming source or drain electrodes wherein semiconductor bodies are replaced by dielectric layers and the source or drain electrodes extend through the dielectric layers}<br><br><u>WARNING</u><br>Group H10D30/0198 is incomplete pending reclassification of documents from groups H10D30/01, H10D30/014, H10D30/024, H10D30/031, H10D30/0321, H10D30/0323 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/01		399
H10D30/021	9	{of FETs having insulated gates [IGFET]}<br><br><u>WARNING</u><br>Groups H10D30/021, H10D30/0212, H10D30/0213, H10D30/0215, H10D30/0217, H10D30/0221, H10D30/023, H10D30/0243, H10D30/025, H10D30/026, H10D30/027, H10D30/0275, H10D30/0277, H10D30/0278 and H10D30/0413 are incomplete pending reclassification of documents from group H10D30/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/021		5251
H10D30/0212	10	{using self-aligned silicidation}	H10D30/01	H10D30/0212		5168
H10D30/0213	11	{providing different silicide thicknesses on gate electrodes and on source regions or drain regions}	H10D30/01	H10D30/0213		298
H10D30/0215	10	{using self-aligned selective metal deposition simultaneously on gate electrodes and the source regions or drain regions}	H10D30/01	H10D30/0215		171
H10D30/0217	10	{forming self-aligned punch-through stoppers or threshold implants under gate regions}	H10D30/01	H10D30/0217		699
H10D30/0218	10	{having pocket halo regions selectively formed at the sides of the gates}<br><br><u>WARNING</u><br>Group H10D30/0218 is incomplete pending reclassification of documents from groups H10D30/01 and H10D30/022.<br>Groups H10D30/01, H10D30/022 and H10D30/0218 should be considered in order to perform a complete search.	H10D30/01	H10D30/0218		169
H10D30/022	10	{having lightly-doped source or drain extensions selectively formed at the sides of the gates}<br><br><u>WARNING</u><br>Group H10D30/022 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/022 is also impacted by reclassification into group H10D30/0218.<br>Groups H10D30/01, H10D30/022 and H10D30/0218 should be considered in order to perform a complete search.	H10D30/01	H10D30/022		821
H10D30/0221	10	{having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}	H10D30/01	H10D30/0221		2587
H10D30/0223	10	{having source and drain regions or source and drain extensions self-aligned to sides of the gate}<br><br><u>WARNING</u><br>Groups H10D30/0223 - H10D30/0229 are incomplete pending reclassification of documents from groups H10D30/01 and H10D30/0273. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0223		1475
H10D30/0225	11	{using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes}	H10D30/01	H10D30/0225		496
H10D30/0227	11	{having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET}	H10D30/01	H10D30/0227		6491
H10D30/0229	12	{forming drain regions and lightly-doped drain [LDD] simultaneously, e.g. using implantation through a T-shaped mask}	H10D30/01	H10D30/0229		229
H10D30/023	10	{having multiple independently-addressable gate electrodes influencing the same channel (manufacture or treatment of dual gate TFTs H10D30/031)}	H10D30/01	H10D30/023		887
H10D30/024	10	{of fin field-effect transistors [FinFET]}<br><br><u>WARNING</u><br>Group H10D30/024 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/024 is also impacted by reclassification into groups H10D30/019 - H10D30/0198.<br>Groups H10D30/01, H10D30/024 and H10D30/019 - H10D30/0198 should be considered in order to perform a complete search.	H10D30/01	H10D30/024		10953
H10D30/0241	11	{doping of vertical sidewalls, e.g. using tilted or multi-angled implants}<br><br><u>WARNING</u><br>Group H10D30/0241 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0241 is also impacted by reclassification into groups H10D30/019 and H10D30/0191 - H10D30/0194.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0241		822
H10D30/0243	11	{using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}	H10D30/01	H10D30/0243		1038
H10D30/0245	11	{by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins}<br><br><u>WARNING</u><br>Group H10D30/0245 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0245 is also impacted by reclassification into groups H10D30/0191 - H10D30/0194.<br>Groups H10D30/01, H10D30/0245 and H10D30/0191 - H10D30/0194 should be considered in order to perform a complete search.	H10D30/01	H10D30/0245		530
H10D30/025	10	{of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}	H10D30/01	H10D30/025		3817
H10D30/026	10	{having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289)}	H10D30/01	H10D30/026		339
H10D30/027	10	{of lateral single-gate IGFETs}	H10D30/01	H10D30/027		960
H10D30/0273	11	{forming final gates or dummy gates after forming source and drain electrodes, e.g. contact first technology}<br><br><u>WARNING</u><br>Group H10D30/0273 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0273 is also impacted by reclassification into groups H10D30/0223 - H10D30/0229 and H10D64/017.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0273		214
H10D30/0275	11	{forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions}	H10D30/01	H10D30/0275		1570
H10D30/0277	11	{forming conductor-insulator-semiconductor or Schottky barrier source or drain regions}	H10D30/01	H10D30/0277		186
H10D30/0278	11	{forming single crystalline channels on wafers after forming insulating device isolations}	H10D30/01	H10D30/0278		423
H10D30/028	10	{of double-diffused metal oxide semiconductor [DMOS] FETs}<br><br><u>WARNING</u><br>Groups H10D30/028 - H10D30/0297 are incomplete pending reclassification of documents from groups H10D12/031 and H10D30/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/028		290
H10D30/0281	11	{of lateral DMOS [LDMOS] FETs}	H10D30/01	H10D30/0281		2415
H10D30/0285	12	{using formation of insulating sidewall spacers}	H10D30/01	H10D30/0285		565
H10D30/0287	12	{using recessing of the source electrodes}	H10D30/01	H10D30/0287		127
H10D30/0289	12	{using recessing of the gate electrodes, e.g. to form trench gate electrodes}	H10D30/01	H10D30/0289		388
H10D30/0291	11	{of vertical DMOS [VDMOS] FETs}	H10D30/01	H10D30/0291		3172
H10D30/0293	12	{using formation of insulating sidewall spacers}	H10D30/01	H10D30/0293		404
H10D30/0295	12	{using recessing of the source electrodes}	H10D30/01	H10D30/0295		1273
H10D30/0297	12	{using recessing of the gate electrodes, e.g. to form trench gate electrodes}	H10D30/01	H10D30/0297		4880
H10D30/031	10	{of thin-film transistors [TFT]}<br><br><u>WARNING</u><br>Group H10D30/031 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/031 is also impacted by reclassification into groups H10D30/017, H10D30/019 - H10D30/0198, H10D30/0312 and H10D30/0318.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/031		4445
H10D30/0312	11	{characterised by the gate electrodes}<br><br><u>WARNING</u><br>Group H10D30/0312 is incomplete pending reclassification of documents from groups H10D30/01, H10D30/031, H10D30/0321 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0312		280
H10D30/0314	12	{of lateral top-gate TFTs comprising only a single gate}<br><br><u>WARNING</u><br>Group H10D30/0314 is incomplete pending reclassification of documents from groups H10D30/01 and H10D30/0327.<br>Groups H10D30/01, H10D30/0327 and H10D30/0314 should be considered in order to perform a complete search.	H10D30/01	H10D30/0314		3291
H10D30/0316	12	{of lateral bottom-gate TFTs comprising only a single gate}<br><br><u>WARNING</u><br>Group H10D30/0316 is incomplete pending reclassification of documents from groups H10D30/01 and H10D30/0327.<br>Groups H10D30/01, H10D30/0327 and H10D30/0316 should be considered in order to perform a complete search.	H10D30/01	H10D30/0316		2674
H10D30/0318	11	{of vertical TFTs}<br><br><u>WARNING</u><br>Group H10D30/0318 is incomplete pending reclassification of documents from groups H10D30/01, H10D30/031, H10D30/0321 and H10D30/0327.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0318		59
H10D30/0321	11	{comprising silicon, e.g. amorphous silicon or polysilicon}<br><br><u>WARNING</u><br>Group H10D30/0321 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0321 is also impacted by reclassification into groups H10D30/019 - H10D30/0198, H10D30/0312 and H10D30/0318.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0321		5096
H10D30/0323	12	{comprising monocrystalline silicon}<br><br><u>WARNING</u><br>Group H10D30/0323 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0323 is also impacted by reclassification into groups H10D30/017 and H10D30/019 - H10D30/0198.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0323		2346
H10D30/0327	13	{on sapphire substrates, e.g. of silicon-on-sapphire [SOS] transistor}<br><br><u>WARNING</u><br>Group H10D30/0327 is incomplete pending reclassification of documents from group H10D30/01. Group H10D30/0327 is also impacted by reclassification into groups H10D30/019 - H10D30/0198, H10D30/0312 - H10D30/0316 and H10D30/0318.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0327		43
H10D30/0411	10	{of FETs having floating gates}<br><br><u>WARNING</u><br>Group H10D30/0411 is incomplete pending reclassification of documents from groups H10D30/01 and H10D30/0415.<br>Groups H10D30/01, H10D30/0415 and H10D30/0411 should be considered in order to perform a complete search.	H10D30/01	H10D30/0411		4477
H10D30/0413	10	{of FETs having charge-trapping gate insulators, e.g. MNOS transistors}	H10D30/01	H10D30/0413		2653
H10D30/0415	10	{of FETs having ferroelectric gate insulators}<br><br><u>WARNING</u><br>Group H10D30/0415 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/0415 is also impacted by reclassification into group H10D30/0411.<br>Groups H10D30/01, H10D30/0415 and H10D30/0411 should be considered in order to perform a complete search.	H10D30/01	H10D30/0415		993
H10D30/051	9	{of FETs having PN junction gates (H10D30/015 takes precedence)}<br><br><u>WARNING</u><br>Groups H10D30/051 - H10D30/0516 are incomplete pending reclassification of documents from group H10D30/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/051		478
H10D30/0512	10	{of FETs having PN homojunction gates}	H10D30/01	H10D30/0512		338
H10D30/0515	11	{of vertical FETs having PN homojunction gates}	H10D30/01	H10D30/0515		185
H10D30/0516	10	{of FETs having PN heterojunction gates}	H10D30/01	H10D30/0516		114
H10D30/061	9	{of FETs having Schottky gates (H10D30/015 takes precedence)}<br><br><u>WARNING</u><br>Group H10D30/061 is incomplete pending reclassification of documents from group H10D30/01. <br>Group H10D30/061 is also impacted by reclassification into groups H10D30/0612 - H10D30/0616 and H10D30/0618.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/061		399
H10D30/0612	10	{of lateral single-gate Schottky FETs}<br><br><u>WARNING</u><br>Groups H10D30/0612 - H10D30/0616 are incomplete pending reclassification of documents from groups H10D30/01 and H10D30/061.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/01	H10D30/0612		338
H10D30/0614	11	{using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates}	H10D30/01	H10D30/0614		215
H10D30/0616	11	{using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes}	H10D30/01	H10D30/0616		181
H10D30/0618	10	{of lateral Schottky gate FETs having multiple independently-addressable gate electrodes}<br><br><u>WARNING</u><br>Group H10D30/0618 is incomplete pending reclassification of documents from groups H10D30/01 and H10D30/061.<br>Groups H10D30/01, H10D30/061 and H10D30/0618 should be considered in order to perform a complete search.	H10D30/01	H10D30/0618		14
H10D30/202	8	{FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]}	H10D30/00	H10D30/202		371
H10D30/204	8	{Velocity modulation transistors [VMT]}	H10D30/00	H10D30/204		33
H10D30/40	8	FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels<br><br><u>WARNING</u><br>Group H10D30/40 is incomplete pending reclassification of documents from group H10D30/00.<br>Groups H10D30/00 and H10D30/40 should be considered in order to perform a complete search.	H10D30/40	H10D30/40		13
H10D30/402	9	{Single electron transistors; Coulomb blockade transistors}	H10D30/40	H10D30/40		532
H10D30/43	9	having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels<br><br><u>WARNING</u><br>Group H10D30/43 is impacted by reclassification into groups H10D30/435 and H10D30/501 - H10D30/509.<br>Groups H10D30/43, H10D30/435 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/43	H10D30/43		6789
H10D30/435	10	{having multiple laterally adjacent 1D material channels}<br><br><u>WARNING</u><br>Group H10D30/435 is incomplete pending reclassification of documents from group H10D30/43.<br>Groups H10D30/43 and H10D30/435 should be considered in order to perform a complete search.	H10D30/43	H10D30/43		29
H10D30/47	9	having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]<br><br><u>WARNING</u><br>Group H10D30/47 is impacted by reclassification into groups H10D30/471, H10D30/474, H10D30/476, H10D30/481 and H10D30/501 - H10D30/509.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/47	H10D30/47		3543
H10D30/471	10	{High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]}<br><br><u>WARNING</u><br>Groups H10D30/471, H10D30/474 and H10D30/476 are incomplete pending reclassification of documents from group H10D30/47.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/47	H10D30/47		449
H10D30/472	11	{having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT}	H10D30/47	H10D30/47		636
H10D30/473	11	{having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT}	H10D30/47	H10D30/47		405
H10D30/4732	12	{using Group III-V semiconductor material}	H10D30/47	H10D30/47		1776
H10D30/4735	13	{having delta-doped or planar-doped donor layers}<br><br><u>WARNING</u><br>Group H10D30/4735 is incomplete pending reclassification of documents from group H10D30/4738.<br>Groups H10D30/4738 and H10D30/4735 should be considered in order to perform a complete search.	H10D30/47	H10D30/47		160
H10D30/4738	13	{having multiple donor layers}<br><br><u>WARNING</u><br>Group H10D30/4738 is impacted by reclassification into group H10D30/4735.<br>Groups H10D30/4738 and H10D30/4735 should be considered in order to perform a complete search.	H10D30/47	H10D30/47		256
H10D30/474	11	{having multiple parallel 2D charge carrier gas channels}	H10D30/47	H10D30/47		32
H10D30/475	11	{having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}	H10D30/47	H10D30/47		4588
H10D30/4755	12	{having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}	H10D30/47	H10D30/47		3507
H10D30/476	11	{having gate trenches interrupting the 2D charge carrier gas channels, e.g. hybrid MOS-HEMTs}	H10D30/47	H10D30/47		34
H10D30/477	11	{Vertical HEMTs or vertical HHMTs}<br><br><u>WARNING</u><br>Group H10D30/477 is impacted by reclassification into group H10D30/485.<br>Groups H10D30/477 and H10D30/485 should be considered in order to perform a complete search.	H10D30/47	H10D30/47		530
H10D30/478	11	{the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body}<br><br><u>WARNING</u><br>Group H10D30/478 is impacted by reclassification into group H10D30/485.<br>Groups H10D30/478 and H10D30/485 should be considered in order to perform a complete search.	H10D30/47	H10D30/47		288
H10D30/481	10	{FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs}<br><br><u>WARNING</u><br>Group H10D30/481 is incomplete pending reclassification of documents from groups H10D30/47 and H10D30/6741.<br>Groups H10D30/47, H10D30/6741 and H10D30/481 should be considered in order to perform a complete search.	H10D30/47	H10D30/481		182
H10D30/485	11	{Vertical FETs having two-dimensional material channels}<br><br><u>WARNING</u><br>Group H10D30/485 is incomplete pending reclassification of documents from groups H10D30/477, H10D30/478 and H10D30/6741.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/47	H10D30/485		12
H10D30/501	8	{FETs having stacked nanowire, nanosheet or nanoribbon channels}<br><br><u>WARNING</u><br>Groups H10D30/501, H10D30/502, H10D30/507, H10D30/508 and H10D30/509 are incomplete pending reclassification of documents from groups H10D30/43, H10D30/47, H10D30/62, H10D30/6211, H10D30/6217, H10D30/6218, H10D30/6219, H10D30/6733, H10D30/6734, H10D30/6735, H10D30/6748 and H10D30/6757.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/00	H10D30/501		793
H10D30/502	9	{characterised by the stacked channels}	H10D30/00	H10D30/502		134
H10D30/503	10	{having non-rectangular cross-sections}<br><br><u>WARNING</u><br>Group H10D30/503 is incomplete pending reclassification of documents from groups H10D30/43, H10D30/47, H10D30/62, H10D30/6211, H10D30/6212, H10D30/6213, H10D30/6217, H10D30/6218, H10D30/6219, H10D30/6733, H10D30/6734, H10D30/6735, H10D30/6748 and H10D30/6757.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/00	H10D30/503		113
H10D30/504	10	{wherein the stacked channels have different properties}<br><br><u>WARNING</u><br>Groups H10D30/504 and H10D30/506 are incomplete pending reclassification of documents from groups H10D30/43, H10D30/47, H10D30/62, H10D30/6211, H10D30/6212, H10D30/6213, H10D30/6217, H10D30/6218, H10D30/6219, H10D30/6733, H10D30/6734, H10D30/6735, H10D30/6748 and H10D30/6757.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/00	H10D30/504		47
H10D30/506	11	{having different thicknesses, sizes or shapes}	H10D30/00	H10D30/506		88
H10D30/507	9	{characterised by inner spacers between adjacent channels}	H10D30/00	H10D30/507		56
H10D30/508	10	{characterised by the relative sizes, shapes or dispositions of the inner spacers}	H10D30/00	H10D30/508		76
H10D30/509	10	{characterised by the material of the inner spacers}	H10D30/00	H10D30/509		35
H10D30/60	8	Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)	H10D30/60	H10D30/60		13397
H10D30/601	9	{having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs&#160; (lightly doped source or drain extensions for TFTs H10D30/6715)}	H10D30/60	H10D30/60		4943
H10D30/603	10	{having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}<br><br><u>WARNING</u><br>Group H10D30/603 is impacted by reclassification into group H10D30/605.<br>Groups H10D30/603 and H10D30/605 should be considered in order to perform a complete search.	H10D30/60	H10D30/60		3889
H10D30/605	10	{having significant overlap between the lightly-doped extensions and the gate electrode}<br><br><u>WARNING</u><br>Group H10D30/605 is incomplete pending reclassification of documents from groups H10D30/603 and H10D30/608.<br>Groups H10D30/603, H10D30/608 and H10D30/605 should be considered in order to perform a complete search.	H10D30/60	H10D30/60		583
H10D30/608	10	{having non-planar bodies, e.g. having recessed gate electrodes}<br><br><u>WARNING</u><br>Group H10D30/608 is impacted by reclassification into group H10D30/605.<br>Groups H10D30/608 and H10D30/605 should be considered in order to perform a complete search.	H10D30/60	H10D30/60		1530
H10D30/611	9	{having multiple independently-addressable gate electrodes influencing the same channel (FinFETs having multiple distinct gate electrodes H10D30/6215; multi-gate TFT H10D30/6733)}	H10D30/60	H10D30/611		2064
H10D30/615	10	{comprising a MOS gate electrode and at least one non-MOS gate electrode}	H10D30/60	H10D30/615		282
H10D30/62	9	Fin field-effect transistors [FinFET]<br><br><u>WARNING</u><br>Group H10D30/62 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/62 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		10537
H10D30/6211	10	{having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}<br><br><u>WARNING</u><br>Group H10D30/6211 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6211 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		2947
H10D30/6212	10	{having fin-shaped semiconductor bodies having non-rectangular cross-sections}<br><br><u>WARNING</u><br>Group H10D30/6212 is impacted by reclassification into groups H10D30/503 and H10D30/504 - H10D30/506.<br>Groups H10D30/6212, H10D30/503 and H10D30/504 - H10D30/506 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		858
H10D30/6213	11	{having rounded corners}<br><br><u>WARNING</u><br>Group H10D30/6213 is impacted by reclassification into groups H10D30/503 and H10D30/504 - H10D30/506.<br>Groups H10D30/6213, H10D30/503 and H10D30/504 - H10D30/506 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		471
H10D30/6215	10	{having multiple independently-addressable gate electrodes}<br><br><u>WARNING</u><br>Group H10D30/6215 is impacted by reclassification into group H10D30/6217.<br>Groups H10D30/6215 and H10D30/6217 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		1000
H10D30/6217	10	{having non-uniform gate electrodes, e.g. gate conductors having varying doping}<br><br><u>WARNING</u><br>Group H10D30/6217 is incomplete pending reclassification of documents from group H10D30/6215. <br>Group H10D30/6217 is also impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6215, H10D30/6217 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		321
H10D30/6218	10	{of the accumulation type}<br><br><u>WARNING</u><br>Group H10D30/6218 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6218 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		91
H10D30/6219	10	{characterised by the source or drain electrodes}<br><br><u>WARNING</u><br>Group H10D30/6219 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6219 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/62	H10D30/62		2932
H10D30/63	9	Vertical IGFETs (H10D30/66{, H10D30/6728, H10D30/689, H10D30/693} take precedence)	H10D30/63	H10D30/63		5049
H10D30/635	10	{having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs}	H10D30/63	H10D30/63		732
H10D30/637	9	{Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs}	H10D30/63	H10D30/63		730
H10D30/64	9	Double-diffused metal-oxide semiconductor [DMOS] FETs<br><br><u>WARNING</u><br>Group H10D30/64 is impacted by reclassification into groups H10D30/645 and H10D84/101.<br>Groups H10D30/64, H10D30/645 and H10D84/101 should be considered in order to perform a complete search.	H10D30/64	H10D30/64		605
H10D30/645	10	{Bidirectional devices}<br><br><u>WARNING</u><br>Group H10D30/645 is incomplete pending reclassification of documents from group H10D30/64.<br>Groups H10D30/64 and H10D30/645 should be considered in order to perform a complete search.	H10D30/64	H10D30/64		42
H10D30/65	10	Lateral DMOS [LDMOS] FETs	H10D30/65	H10D30/65		3910
H10D30/655	11	{having edge termination structures}	H10D30/65	H10D30/65		528
H10D30/657	11	{having substrates comprising insulating layers, e.g. SOI-LDMOS transistors}	H10D30/65	H10D30/65		793
H10D30/658	11	{having trench gate electrodes}	H10D30/65	H10D30/65		608
H10D30/659	11	{having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells}	H10D30/65	H10D30/65		63
H10D30/66	10	Vertical DMOS [VDMOS] FETs<br><br><u>WARNING</u><br>Group H10D30/66 is impacted by reclassification into group H10D30/662.<br>Groups H10D30/66 and H10D30/662 should be considered in order to perform a complete search.	H10D30/66	H10D30/66		5303
H10D30/662	11	{having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region}<br><br><u>WARNING</u><br>Group H10D30/662 is incomplete pending reclassification of documents from group H10D30/66.<br>Groups H10D30/66 and H10D30/662 should be considered in order to perform a complete search.	H10D30/66	H10D30/66		516
H10D30/663	11	{having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS}	H10D30/66	H10D30/66		618
H10D30/664	11	{Inverted VDMOS transistors, i.e. source-down VDMOS transistors}	H10D30/66	H10D30/66		121
H10D30/665	11	{having edge termination structures}	H10D30/66	H10D30/66		3492
H10D30/667	11	{having substrates comprising insulating layers, e.g. SOI-VDMOS transistors}	H10D30/66	H10D30/66		155
H10D30/668	11	{having trench gate electrodes, e.g. UMOS transistors}	H10D30/66	H10D30/66		8760
H10D30/669	11	{having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells}	H10D30/66	H10D30/66		368
H10D30/67	9	Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}	H10D30/67	H10D30/67		6375
H10D30/6704	10	{having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}<br><br><u>WARNING</u><br>Group H10D30/6704 is incomplete pending reclassification of documents from group H10D30/6728.<br>Groups H10D30/6728 and H10D30/6704 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		2214
H10D30/6706	11	{for preventing leakage current&#160; (TFTs characterised by the properties of the source or drain H10D30/6713)}	H10D30/67	H10D30/67		797
H10D30/6708	11	{for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect}	H10D30/67	H10D30/67		389
H10D30/6711	12	{by using electrodes contacting the supplementary regions or layers}	H10D30/67	H10D30/67		342
H10D30/6713	11	{characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}	H10D30/67	H10D30/67		3847
H10D30/6715	12	{characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}	H10D30/67	H10D30/67		1964
H10D30/6717	13	{the source and the drain regions being asymmetrical}	H10D30/67	H10D30/67		544
H10D30/6719	13	{having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs}	H10D30/67	H10D30/67		266
H10D30/6721	13	{having lightly-doped extensions consisting of multiple lightly doped zones or having non-homogeneous dopant distributions, e.g. graded LDD}	H10D30/67	H10D30/67		154
H10D30/6723	11	{having light shields}	H10D30/67	H10D30/67		2153
H10D30/6725	11	{having supplementary regions or layers for improving the flatness of the device}	H10D30/67	H10D30/67		328
H10D30/6727	11	{having source or drain regions connected to bulk conducting substrates}	H10D30/67	H10D30/67		153
H10D30/6728	10	{Vertical TFTs}<br><br><u>WARNING</u><br>Group H10D30/6728 is impacted by reclassification into groups H10D30/6704 and H10D30/674. <br>Groups H10D30/6728, H10D30/6704 and H10D30/674 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		2240
H10D30/6729	10	{characterised by the electrodes}	H10D30/67	H10D30/67		4058
H10D30/673	11	{characterised by the shapes, relative sizes or dispositions of the gate electrodes}	H10D30/67	H10D30/67		3280
H10D30/6731	12	{Top-gate only TFTs}	H10D30/67	H10D30/67		2202
H10D30/6732	12	{Bottom-gate only TFTs}	H10D30/67	H10D30/67		1574
H10D30/6733	12	{Multi-gate TFTs}<br><br><u>WARNING</u><br>Group H10D30/6733 is impacted by reclassification into groups H10D30/501 - H10D30/509 and H10D30/674.<br>Groups H10D30/6733, H10D30/501 - H10D30/509 and H10D30/674 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		1227
H10D30/6734	13	{having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}<br><br><u>WARNING</u><br>Group H10D30/6734 is impacted by reclassification into groups H10D30/501 - H10D30/509 and H10D30/674.<br>Groups H10D30/6734, H10D30/501 - H10D30/509 and H10D30/674 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		2415
H10D30/6735	12	{having gates fully surrounding the channels, e.g. gate-all-around}<br><br><u>WARNING</u><br>Group H10D30/6735 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6735 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		7889
H10D30/6736	12	{characterised by the shape of gate insulators}	H10D30/67	H10D30/67		333
H10D30/6737	11	{characterised by the electrode materials}	H10D30/67	H10D30/67		1696
H10D30/6738	12	{Schottky barrier electrodes}	H10D30/67	H10D30/67		840
H10D30/6739	12	{Conductor-insulator-semiconductor electrodes}	H10D30/67	H10D30/67		4218
H10D30/674	10	{characterised by the active materials}<br><br><u>WARNING</u><br>Group H10D30/674 is incomplete pending reclassification of documents from groups H10D30/6728, H10D30/6733, H10D30/6734 and H10D30/6757.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D30/67	H10D30/67		831
H10D30/6741	11	{Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)}<br><br><u>WARNING</u><br>Group H10D30/6741 is impacted by reclassification into groups H10D30/481 and H10D30/485. <br>Groups H10D30/6741, H10D30/481 and H10D30/485 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		1221
H10D30/6743	12	{Silicon}	H10D30/67	H10D30/67		1744
H10D30/6744	13	{Monocrystalline silicon}	H10D30/67	H10D30/67		1321
H10D30/6745	13	{Polycrystalline or microcrystalline silicon}	H10D30/67	H10D30/67		2875
H10D30/6746	13	{Amorphous silicon}	H10D30/67	H10D30/67		1241
H10D30/6748	12	{having a multilayer structure or superlattice structure}<br><br><u>WARNING</u><br>Group H10D30/6748 is impacted by reclassification into groups H10D30/501 - H10D30/509.<br>Groups H10D30/6748 and H10D30/501 - H10D30/509 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		387
H10D30/675	11	{Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}	H10D30/67	H10D30/67		1957
H10D30/6755	11	{Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}	H10D30/67	H10D30/67		9556
H10D30/6756	12	{Amorphous oxide semiconductors}	H10D30/67	H10D30/67		1018
H10D30/6757	10	{characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}<br><br><u>WARNING</u><br>Group H10D30/6757 is impacted by reclassification into groups H10D30/501 - H10D30/509 and H10D30/674.<br>Groups H10D30/6757, H10D30/501 - H10D30/509 and H10D30/674 should be considered in order to perform a complete search.	H10D30/67	H10D30/67		13083
H10D30/6758	10	{characterised by the insulating substrates}	H10D30/67	H10D30/67		2472
H10D30/6759	11	{Silicon-on-sapphire [SOS] substrates}	H10D30/67	H10D30/67		128
H10D30/68	9	Floating-gate IGFETs<br><br><u>WARNING</u><br>Group H10D30/68 is incomplete pending reclassification of documents from group H10D30/701.<br>Groups H10D30/701 and H10D30/68 should be considered in order to perform a complete search.	H10D30/68	H10D30/68		1797
H10D30/681	10	{having only two programming levels (Floating gate IGFETs programmable by two single electrons H10D30/688)}	H10D30/68	H10D30/68		2414
H10D30/682	11	{programmed by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction}	H10D30/68	H10D30/68		43
H10D30/683	11	{programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling}	H10D30/68	H10D30/68		1432
H10D30/684	11	{programmed by hot carrier injection}	H10D30/68	H10D30/68		140
H10D30/685	12	{from the channel}	H10D30/68	H10D30/68		827
H10D30/686	12	{using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]}	H10D30/68	H10D30/68		177
H10D30/687	10	{having more than two programming levels}	H10D30/68	H10D30/68		445
H10D30/688	10	{programmed by two single electrons}	H10D30/68	H10D30/68		73
H10D30/689	10	{Vertical floating-gate IGFETs}	H10D30/68	H10D30/68		423
H10D30/6891	10	{characterised by the shapes, relative sizes or dispositions of the floating gate electrode}	H10D30/68	H10D30/68		3043
H10D30/6892	11	{having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate}	H10D30/68	H10D30/68		1181
H10D30/6893	11	{wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate}	H10D30/68	H10D30/68		680
H10D30/6894	11	{having one gate at least partly in a trench}	H10D30/68	H10D30/68		557
H10D30/69	9	IGFETs having charge trapping gate insulators, e.g. MNOS transistors	H10D30/69	H10D30/69		3325
H10D30/691	10	{having more than two programming levels}	H10D30/69	H10D30/69		618
H10D30/693	10	{Vertical IGFETs having charge trapping gate insulators}	H10D30/69	H10D30/69		1351
H10D30/694	10	{characterised by the shapes, relative sizes or dispositions of the gate electrodes}	H10D30/69	H10D30/69		1202
H10D30/696	11	{having at least one additional gate, e.g. program gate, erase gate or select gate}	H10D30/69	H10D30/69		588
H10D30/697	11	{having trapping at multiple separated sites, e.g. multi-particles trapping sites}	H10D30/69	H10D30/69		242
H10D30/699	11	{having the gate at least partly formed in a trench}	H10D30/69	H10D30/69		174
H10D30/701	9	{IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs}<br><br><u>WARNING</u><br>Group H10D30/701 is impacted by reclassification into group H10D30/68.<br>Groups H10D30/701 and H10D30/68 should be considered in order to perform a complete search.	H10D30/69	H10D30/701		1660
H10D30/711	9	{having floating bodies}	H10D30/69	H10D30/711		845
H10D30/721	9	{having a gate-to-body connection, i.e. bulk dynamic threshold voltage IGFET&#160; (TFTs having gate-to-body connection H10D30/6708)}	H10D30/69	H10D30/721		137
H10D30/751	9	{having composition variations in the channel regions}<br><br><u>WARNING</u><br>Group H10D30/751 is impacted by reclassification into group H10D30/798.<br>Groups H10D30/751 and H10D30/798 should be considered in order to perform a complete search.	H10D30/69	H10D30/751		2325
H10D30/791	9	{Arrangements for exerting mechanical stress on the crystal lattice of the channel regions}	H10D30/69	H10D30/791		873
H10D30/792	10	{comprising applied insulating layers, e.g. stress liners}	H10D30/69	H10D30/792		1934
H10D30/794	10	{comprising conductive materials, e.g. silicided source, drain or gate electrodes}	H10D30/69	H10D30/794		455
H10D30/795	10	{being in lateral device isolation regions, e.g. STI}	H10D30/69	H10D30/795		669
H10D30/796	10	{having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates}	H10D30/69	H10D30/796		273
H10D30/797	10	{being in source or drain regions, e.g. SiGe source or drain}	H10D30/69	H10D30/797		5696
H10D30/798	10	{being provided in or under the channel regions}<br><br><u>WARNING</u><br>Group H10D30/798 is incomplete pending reclassification of documents from group H10D30/751.<br>Groups H10D30/751 and H10D30/798 should be considered in order to perform a complete search.	H10D30/69	H10D30/798		586
H10D30/80	8	FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)	H10D30/80	H10D30/80		1434
H10D30/801	9	{FETs having heterojunction gate electrodes}	H10D30/80	H10D30/80		385
H10D30/803	10	{Programmable transistors, e.g. having charge-trapping quantum well}	H10D30/80	H10D30/80		39
H10D30/83	9	FETs having PN junction gate electrodes	H10D30/83	H10D30/83		1139
H10D30/831	10	{Vertical FETs having PN junction gate electrodes (Vertical SIT&#160;H10D30/202)}	H10D30/83	H10D30/83		763
H10D30/832	10	{Thin-film junction FETs [JFET]}	H10D30/83	H10D30/83		116
H10D30/87	9	FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] {(FETs having Schottky contact on top of heterojunction gate H10D30/801)}	H10D30/87	H10D30/87		1293
H10D30/871	10	{Vertical FETs having Schottky gate electrodes&#160; (Vertical SIT or PBT&#160;H10D30/202)}	H10D30/87	H10D30/87		166
H10D30/873	10	{having multiple gate electrodes}	H10D30/87	H10D30/87		157
H10D30/875	10	{having thin-film semiconductor bodies}	H10D30/87	H10D30/87		79
H10D30/877	10	{having recessed gate electrodes}	H10D30/87	H10D30/87		255
H10D44/00	7	Charge transfer devices<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D44/00	H10D44/00		26
H10D44/01	8	Manufacture or treatment	H10D44/01	H10D44/01		25
H10D44/041	9	{having insulated gates}	H10D44/01	H10D44/041		185
H10D44/061	9	{having Schottky gates}	H10D44/01	H10D44/061		2
H10D44/40	8	Charge-coupled&#160;devices&#160;[CCD]	H10D44/40	H10D44/40		71
H10D44/45	9	having field effect produced by insulated gate electrodes&#160;	H10D44/45	H10D44/45		489
H10D44/452	10	{Input structures}	H10D44/45	H10D44/45		260
H10D44/454	10	{Output structures}	H10D44/45	H10D44/45		337
H10D44/456	10	{Structures for regeneration, refreshing or leakage compensation}	H10D44/45	H10D44/45		71
H10D44/462	10	{Buried-channel CCD}	H10D44/45	H10D44/462		219
H10D44/464	11	{Two-phase CCD}	H10D44/45	H10D44/464		96
H10D44/466	11	{Three-phase CCD}	H10D44/45	H10D44/466		36
H10D44/468	11	{Four-phase CCD}	H10D44/45	H10D44/468		39
H10D44/472	10	{Surface-channel CCD}	H10D44/45	H10D44/472		120
H10D44/474	11	{Two-phase CCD}	H10D44/45	H10D44/474		116
H10D44/476	11	{Three-phase CCD}	H10D44/45	H10D44/476		65
H10D44/478	11	{Four-phase CCD}	H10D44/45	H10D44/478		39
H10D48/00	7	Individual devices not covered by groups H10D1/00 - H10D44/00<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.<br><br><u>WARNING</u><br>Group H10D48/00 is incomplete pending reclassification of documents from group H10D48/30.<br>Groups H10D48/30 and H10D48/00 should be considered in order to perform a complete search.	H10D48/00	H10D48/00		25
H10D48/01	8	Manufacture or treatment	H10D48/01	H10D48/01		364
H10D48/021	9	{of two-electrode devices}<br><br><u>WARNING</u><br>Group H10D48/021 is incomplete pending reclassification of documents from group H10D8/051. <br>Group H10D48/021 is also impacted by reclassification into groups H10D1/025, H10D1/045 - H10D1/048 and H10D8/01 - H10D8/055.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D48/01	H10D48/021		128
H10D48/031	9	{of three-or-more electrode devices}<br><br><u>WARNING</u><br>Group H10D48/031 is impacted by reclassification into groups H10D10/01 - H10D10/061, H10D12/01 - H10D12/038 and H10D18/01 - H10D18/031.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D48/01	H10D48/031		177
H10D48/032	10	{of unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]}	H10D48/01	H10D48/032		76
H10D48/04	9	of devices having bodies comprising selenium or tellurium in uncombined form	H10D48/04	H10D48/04		339
H10D48/042	10	Preparation of foundation plates	H10D48/042	H10D48/042		177
H10D48/043	10	Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination	H10D48/043	H10D48/043		249
H10D48/0431	11	{Application of the selenium or tellurium to the foundation plate}	H10D48/043	H10D48/043		113
H10D48/044	11	Conversion of the selenium or tellurium to the conductive state	H10D48/044	H10D48/044		78
H10D48/045	11	Treatment of the surface of the selenium or tellurium layer after having been made conductive	H10D48/045	H10D48/045		108
H10D48/046	11	Provision of discrete insulating layers	H10D48/046	H10D48/046		206
H10D48/047	10	Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates	H10D48/047	H10D48/047		176
H10D48/048	10	Treatment of the complete device, e.g. by electroforming to form a barrier	H10D48/048	H10D48/048		93
H10D48/049	11	Ageing	H10D48/049	H10D48/049		97
H10D48/07	9	of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]	H10D48/07	H10D48/07		161
H10D48/071	10	{Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate or reduction treatment}	H10D48/07	H10D48/07		58
H10D48/073	11	{Preliminary treatment of the foundation plate}	H10D48/07	H10D48/07		
H10D48/074	11	{Oxidation and subsequent heat treatment of the foundation plate (Reduction of copper oxide H10D48/075)}	H10D48/07	H10D48/07		101
H10D48/075	11	{Reduction of the copper oxide or treatment of the oxide layer}	H10D48/07	H10D48/07		58
H10D48/076	11	{Application of a non-genetic conductive layer}	H10D48/07	H10D48/07		70
H10D48/078	10	{Treatment of the complete device, e.g. electroforming or ageing}	H10D48/07	H10D48/07		26
H10D48/30	8	Devices controlled by electric currents or voltages<br><br><u>WARNING</u><br>Group H10D48/30 is impacted by reclassification into group H10D48/00.<br>Groups H10D48/30 and H10D48/00 should be considered in order to perform a complete search.	H10D48/30	H10D48/30		443
H10D48/32	9	Devices controlled by only the electric current supplied, or only the electric potential applied, to an&#160;electrode&#160;which does not carry the current to be rectified, amplified or switched	H10D48/32	H10D48/32		123
H10D48/34	10	Bipolar devices	H10D48/34	H10D48/34		167
H10D48/341	11	{Unijunction transistors, i.e. double base diodes}	H10D48/34	H10D48/34		12
H10D48/345	11	{Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions}	H10D48/34	H10D48/34		1513
H10D48/36	10	Unipolar devices	H10D48/36	H10D48/36		344
H10D48/362	11	{Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]}	H10D48/36	H10D48/36		447
H10D48/366	10	{Multistable devices; Devices having two or more distinct operating states}	H10D48/32	H10D48/36		130
H10D48/38	9	Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the&#160;electrodes&#160;carrying the current to be rectified, amplified, oscillated or switched<br><br><u>WARNING</u><br>Group H10D48/38 is incomplete pending reclassification of documents from group H10D1/40.<br>Groups H10D1/40 and H10D48/38 should be considered in order to perform a complete search.	H10D48/38	H10D48/38		55
H10D48/381	10	{Multistable devices; Devices having two or more distinct operating states}	H10D48/38	H10D48/38		105
H10D48/383	8	{Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects}<br><br><u>WARNING</u><br>Group H10D48/383 is impacted by reclassification into group H10D48/3835.<br>Groups H10D48/383 and H10D48/3835 should be considered in order to perform a complete search.	H10D48/00	H10D48/38		639
H10D48/3835	9	{Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits}<br><br><u>WARNING</u><br>Group H10D48/3835 is incomplete pending reclassification of documents from group H10D48/383.<br>Groups H10D48/383 and H10D48/3835 should be considered in order to perform a complete search.	H10D48/00	H10D48/38		434
H10D48/385	8	{Devices using spin-polarised carriers}	H10D48/00	H10D48/38		511
H10D48/387	8	{Devices controllable only by the variation of applied heat}	H10D48/00	H10D48/38		79
H10D48/40	8	Devices controlled by magnetic fields	H10D48/40	H10D48/40		729
H10D48/50	8	Devices controlled by mechanical forces, e.g. pressure	H10D48/50	H10D48/50		1399
H10D62/00	7	Semiconductor bodies, or regions thereof, of devices having potential barriers<br><br><u>WARNING</u><br>Group H10D62/00 is impacted by reclassification into group H10D62/01.<br>Groups H10D62/00 and H10D62/01 should be considered in order to perform a complete search.	H10D62/00	H10D62/00		264
H10D62/01	8	{Manufacture or treatment}<br><br><u>WARNING</u><br>Group H10D62/01 is incomplete pending reclassification of documents from group H10D62/00.<br>Groups H10D62/00 and H10D62/01 should be considered in order to perform a complete search.	H10D62/00	H10D62/01		220
H10D62/021	9	{Forming source or drain recesses by etching e.g. recessing by etching and then refilling}	H10D62/00	H10D62/021		2995
H10D62/051	9	{Forming charge compensation regions, e.g. superjunctions}<br><br><u>WARNING</u><br>Groups H10D62/051 - H10D62/058 are incomplete pending reclassification of documents from group H10D62/111.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/00	H10D62/051		467
H10D62/052	10	{by forming stacked epitaxial layers}	H10D62/00	H10D62/052		88
H10D62/054	10	{by high energy implantations in bulk semiconductor bodies, e.g. forming pillars}	H10D62/00	H10D62/054		257
H10D62/056	10	{by out-diffusing dopants from applied layers}	H10D62/00	H10D62/056		13
H10D62/058	10	{by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches}	H10D62/00	H10D62/058		456
H10D62/10	8	Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies<br><br><u>WARNING</u><br>Group H10D62/10 is impacted by reclassification into groups H10D62/128 and H10D62/129.<br>Groups H10D62/10, H10D62/128 and H10D62/129 should be considered in order to perform a complete search.	H10D62/10	H10D62/10		5086
H10D62/102	9	{Constructional design considerations for preventing surface leakage or controlling electric field concentration}	H10D62/10	H10D62/10		1546
H10D62/103	10	{for increasing or controlling the breakdown voltage of reverse-biased devices}	H10D62/10	H10D62/10		1289
H10D62/104	11	{having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats}	H10D62/10	H10D62/10		1164
H10D62/105	11	{by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]&#160; (IGFETs having LDD or drain extension regions&#160;H10D30/601)}	H10D62/10	H10D62/10		3228
H10D62/106	12	{having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}	H10D62/10	H10D62/10		5321
H10D62/107	13	{Buried supplementary regions, e.g. buried guard rings&#160; (multi-RESURF&#160;H10D62/111)}	H10D62/10	H10D62/10		3004
H10D62/108	12	{having localised breakdown regions, e.g. built-in avalanching regions&#160; (in self-protected thyristors&#160;H10D18/211)}	H10D62/10	H10D62/10		330
H10D62/109	12	{Reduced surface field [RESURF] PN junction structures}	H10D62/10	H10D62/10		1047
H10D62/111	13	{Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}<br><br><u>WARNING</u><br>Group H10D62/111 is impacted by reclassification into groups H10D62/051 - H10D62/058.<br>Groups H10D62/111 and H10D62/051 - H10D62/058 should be considered in order to perform a complete search.	H10D62/10	H10D62/111		4155
H10D62/112	10	{for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers}	H10D62/10	H10D62/112		1956
H10D62/113	9	{Isolations within a component, i.e. internal isolations}	H10D62/10	H10D62/113		894
H10D62/114	10	{PN junction isolations}	H10D62/10	H10D62/114		725
H10D62/115	10	{Dielectric isolations, e.g. air gaps}	H10D62/10	H10D62/115		6891
H10D62/116	11	{adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}	H10D62/10	H10D62/116		5297
H10D62/117	9	{Shapes of semiconductor bodies}	H10D62/10	H10D62/117		5445
H10D62/118	10	{Nanostructure semiconductor bodies}	H10D62/10	H10D62/118		2721
H10D62/119	11	{Nanowire, nanosheet or nanotube semiconductor bodies}	H10D62/10	H10D62/119		984
H10D62/121	12	{oriented parallel to substrates}	H10D62/10	H10D62/121		8053
H10D62/122	12	{oriented at angles to substrates, e.g. perpendicular to substrates}	H10D62/10	H10D62/122		1092
H10D62/123	12	{comprising junctions}	H10D62/10	H10D62/123		305
H10D62/124	9	{Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}	H10D62/10	H10D62/124		6672
H10D62/125	10	{Shapes of junctions between the regions}	H10D62/10	H10D62/125		826
H10D62/126	10	{Top-view geometrical layouts of the regions or the junctions}	H10D62/10	H10D62/126		3542
H10D62/127	11	{of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}	H10D62/10	H10D62/127		6033
H10D62/128	9	{Anode regions of diodes}<br><br><u>WARNING</u><br>Group H10D62/128 is incomplete pending reclassification of documents from group H10D62/10.<br>Groups H10D62/10 and H10D62/128 should be considered in order to perform a complete search.	H10D62/10	H10D62/128		385
H10D62/129	9	{Cathode regions of diodes}<br><br><u>WARNING</u><br>Group H10D62/129 is incomplete pending reclassification of documents from group H10D62/10.<br>Groups H10D62/10 and H10D62/129 should be considered in order to perform a complete search.	H10D62/10	H10D62/129		538
H10D62/13	9	Semiconductor regions connected to electrodes&#160;carrying current to be rectified, amplified or switched, e.g. source or drain regions<br><br><u>NOTE</u><br><br>This group covers only semiconductor regions for devices that comprise three or more electrodes.	H10D62/13	H10D62/13		404
H10D62/133	10	{Emitter regions of BJTs}	H10D62/13	H10D62/13		1046
H10D62/134	11	{of lateral BJTs}	H10D62/13	H10D62/13		269
H10D62/135	11	{Non-interconnected multi-emitter structures}	H10D62/13	H10D62/13		152
H10D62/136	11	{of heterojunction BJTs&#160; (vertical heterojunction BJTs having one or more non-monocrystalline Group IV elements H10D10/861)}	H10D62/13	H10D62/13		411
H10D62/137	10	{Collector regions of BJTs}	H10D62/13	H10D62/13		1653
H10D62/138	11	{Pedestal collectors}	H10D62/13	H10D62/13		103
H10D62/141	10	{Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs}<br><br><u>WARNING</u><br>Group H10D62/141 is impacted by reclassification into group H10D62/145.<br>Groups H10D62/141 and H10D62/145 should be considered in order to perform a complete search.	H10D62/13	H10D62/141		226
H10D62/142	11	{Anode regions of thyristors or collector regions of gated bipolar-mode devices}	H10D62/13	H10D62/142		1563
H10D62/145	11	{Emitter regions of IGBTs}<br><br><u>WARNING</u><br>Group H10D62/145 is incomplete pending reclassification of documents from group H10D62/141.<br>Groups H10D62/141 and H10D62/145 should be considered in order to perform a complete search.	H10D62/13	H10D62/145		117
H10D62/148	11	{Cathode regions of thyristors}	H10D62/13	H10D62/148		388
H10D62/149	10	{Source or drain regions of field-effect devices}	H10D62/13	H10D62/149		890
H10D62/151	11	{of IGFETs&#160; (of IGFETs having LDD or DDD structure&#160;H10D30/601; of thin film transistors&#160;H10D30/6713)}	H10D62/13	H10D62/151		9659
H10D62/152	12	{Source regions of DMOS transistors}<br><br><u>WARNING</u><br>Group H10D62/152 is impacted by reclassification into group H10D62/156.<br>Groups H10D62/152 and H10D62/156 should be considered in order to perform a complete search.	H10D62/13	H10D62/152		303
H10D62/153	13	{Impurity concentrations or distributions}	H10D62/13	H10D62/153		668
H10D62/154	13	{Dispositions}	H10D62/13	H10D62/154		729
H10D62/155	13	{Shapes&#160; (cell layout of DMOS&#160;H10D62/127)}	H10D62/13	H10D62/155		392
H10D62/156	12	{Drain regions of DMOS transistors}<br><br><u>WARNING</u><br>Group H10D62/156 is incomplete pending reclassification of documents from group H10D62/152.<br>Groups H10D62/152 and H10D62/156 should be considered in order to perform a complete search.	H10D62/13	H10D62/156		201
H10D62/157	13	{Impurity concentrations or distributions}	H10D62/13	H10D62/157		3437
H10D62/158	13	{Dispositions}	H10D62/13	H10D62/158		507
H10D62/159	13	{Shapes}	H10D62/13	H10D62/159		398
H10D62/161	11	{of FETs having Schottky gates}	H10D62/13	H10D62/161		287
H10D62/165	10	{Tunnel injectors}	H10D62/13	H10D62/165		206
H10D62/17	9	Semiconductor regions connected to electrodes&#160;not carrying current to be rectified, amplified or switched, e.g. channel regions	H10D62/17	H10D62/17		490
H10D62/177	10	{Base regions of bipolar transistors, e.g. BJTs or IGBTs}	H10D62/17	H10D62/17		1492
H10D62/184	11	{of lateral BJTs}	H10D62/17	H10D62/184		381
H10D62/192	10	{Base regions of thyristors}	H10D62/17	H10D62/192		59
H10D62/199	11	{Anode base regions of thyristors}	H10D62/17	H10D62/199		118
H10D62/206	11	{Cathode base regions of thyristors}	H10D62/17	H10D62/206		332
H10D62/213	10	{Channel regions of field-effect devices}	H10D62/17	H10D62/213		228
H10D62/221	11	{of FETs}	H10D62/17	H10D62/221		914
H10D62/228	12	{having delta-doped channels}	H10D62/17	H10D62/228		39
H10D62/235	12	{of IGFETs (IGFETs having buried channels&#160;H10D30/637)}	H10D62/17	H10D62/235		3000
H10D62/292	13	{Non-planar channels&#160;of IGFETs (resulting from the gate electrode dispositions, e.g. within trenches&#160;H10D64/512)}	H10D62/17	H10D62/292		2176
H10D62/299	13	{having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)}<br><br><u>WARNING</u><br>Group H10D62/299 is incomplete pending reclassification of documents from groups H10D62/314 and H10D84/0156.<br>Groups H10D62/314, H10D84/0156 and H10D62/299 should be considered in order to perform a complete search.	H10D62/17	H10D62/299		372
H10D62/307	14	{the doping variations being parallel to the channel lengths}	H10D62/17	H10D62/307		1324
H10D62/314	13	{having vertical doping variations&#160; (vertical IGFETs H10D30/63)}<br><br><u>WARNING</u><br>Group H10D62/314 is impacted by reclassification into group H10D62/299.<br>Groups H10D62/314 and H10D62/299 should be considered in order to perform a complete search.	H10D62/17	H10D62/314		637
H10D62/328	12	{having PN junction gates}	H10D62/17	H10D62/328		284
H10D62/335	11	{of charge-coupled devices}	H10D62/17	H10D62/335		217
H10D62/343	10	{Gate regions of field-effect devices having PN junction gates}	H10D62/17	H10D62/343		1984
H10D62/351	10	{Substrate regions of field-effect devices}	H10D62/17	H10D62/351		66
H10D62/357	11	{of FETs}	H10D62/17	H10D62/357		627
H10D62/364	12	{of IGFETs}	H10D62/17	H10D62/364		1272
H10D62/371	13	{Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}	H10D62/17	H10D62/371		2492
H10D62/378	13	{Contact regions to the substrate regions}<br><br><u>WARNING</u><br>Group H10D62/378 is impacted by reclassification into group H10D64/529.<br>Groups H10D62/378 and H10D64/529 should be considered in order to perform a complete search.	H10D62/17	H10D62/378		955
H10D62/386	11	{of charge-coupled devices}	H10D62/17	H10D62/386		41
H10D62/393	10	{Body regions of DMOS transistors or IGBTs&#160; (cell layout&#160;of DMOS H10D62/127)}	H10D62/17	H10D62/393		6994
H10D62/40	8	Crystalline structures	H10D62/40	H10D62/40		2023
H10D62/402	9	{Amorphous materials}	H10D62/40	H10D62/40		467
H10D62/405	9	{Orientations of crystalline planes}	H10D62/40	H10D62/40		2939
H10D62/50	8	Physical imperfections	H10D62/50	H10D62/50		74
H10D62/53	9	the imperfections being within the semiconductor body&#160;	H10D62/53	H10D62/53		1219
H10D62/57	9	the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface	H10D62/57	H10D62/57		297
H10D62/60	8	Impurity distributions or concentrations	H10D62/60	H10D62/60		3071
H10D62/605	9	{Planar doped, e.g. atomic-plane doped or delta-doped}	H10D62/60	H10D62/60		264
H10D62/80	8	characterised by the materials<br><br><u>NOTE</u><br><br>When classifying in this group, constituents of a material are considered irrespective of any dopants or other impurities.<br>In this group:<br>groups H10D62/81 - H10D62/8181, covering quantum or superlattice structures, take precedence over groups H10D62/82 - H10D62/8281, covering heterojunctions;<br>groups H10D62/82 - H10D62/8281, covering heterojunctions, take precedence over groups H10D62/83 - H10D62/883, covering other materials;<br>groups H10D62/881 - H10D62/883, covering two-dimensional materials, take precedence over groups H10D62/83 - H10D62/875, covering other materials.<br><br><u>WARNING</u><br>Group H10D62/80 is incomplete pending reclassification of documents from group H10D62/81. <br>Group H10D62/80 is also impacted by reclassification into groups H10D62/82, H10D62/8271, H10D62/8281, H10D62/871, H10D62/874, H10D62/875, H10D62/881 and H10D62/883.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/80	H10D62/80		3652
H10D62/81	9	of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation<br><br><u>WARNING</u><br>Group H10D62/81 is impacted by reclassification into group H10D62/80.<br>Groups H10D62/81 and H10D62/80 should be considered in order to perform a complete search.	H10D62/81	H10D62/81		587
H10D62/812	10	{Single quantum well structures}	H10D62/81	H10D62/81		277
H10D62/813	11	{Quantum wire structures}	H10D62/81	H10D62/81		188
H10D62/814	11	{Quantum box structures}	H10D62/81	H10D62/81		476
H10D62/815	10	of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]	H10D62/815	H10D62/815		246
H10D62/8161	11	{potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices (lateral superlattices, lateral surface superlattices H10D62/8181)}	H10D62/815	H10D62/81		166
H10D62/8162	12	{having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation}	H10D62/815	H10D62/81		218
H10D62/8163	13	{comprising long-range structurally-disordered materials, e.g. one-dimensional vertical amorphous superlattices}	H10D62/815	H10D62/81		43
H10D62/8164	13	{comprising only semiconductor materials&#160; (potential variation in long-range structurally-disordered materials H10D62/8163)}	H10D62/815	H10D62/81		641
H10D62/8171	11	{Doping structures, e.g. doping superlattices or nipi superlattices}	H10D62/815	H10D62/81		183
H10D62/8181	11	{Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS]}	H10D62/815	H10D62/81		99
H10D62/82	9	Heterojunctions<br><br><u>WARNING</u><br>Group H10D62/82 is incomplete pending reclassification of documents from groups H10D62/80, H10D62/871 and H10D62/874. <br>Group H10D62/82 is also impacted by reclassification into groups H10D62/8271 and H10D62/8281.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/82	H10D62/82		1545
H10D62/822	10	comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions<br><br><u>WARNING</u><br>Group H10D62/822 is incomplete pending reclassification of documents from group H10D62/83.<br>Groups H10D62/83 and H10D62/822 should be considered in order to perform a complete search.	H10D62/822	H10D62/822		5756
H10D62/824	10	comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions<br><br><u>WARNING</u><br>Group H10D62/824 is incomplete pending reclassification of documents from group H10D62/85.<br>Groups H10D62/85 and H10D62/824 should be considered in order to perform a complete search.	H10D62/824	H10D62/824		3146
H10D62/826	10	comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions<br><br><u>WARNING</u><br>Group H10D62/826 is incomplete pending reclassification of documents from group H10D62/86.<br>Groups H10D62/86 and H10D62/826 should be considered in order to perform a complete search.	H10D62/826	H10D62/826		93
H10D62/8271	10	{comprising only oxide semiconductor materials heterojunctions, e.g. IGZO/IZO}<br><br><u>WARNING</u><br>Group H10D62/8271 is incomplete pending reclassification of documents from groups H10D62/80 and H10D62/82.<br>Groups H10D62/80, H10D62/82 and H10D62/8271 should be considered in order to perform a complete search.	H10D62/82	H10D62/82		43
H10D62/8281	10	{comprising only transition metal dichalcogenide materials heterojunctions, e.g. MoS2/WSe2}<br><br><u>WARNING</u><br>Group H10D62/8281 is incomplete pending reclassification of documents from groups H10D62/80, H10D62/82, H10D62/871 and H10D62/874.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/82	H10D62/82		20
H10D62/83	9	being Group IV materials, e.g. B-doped Si or undoped Ge<br><br><u>WARNING</u><br>Group H10D62/83 is impacted by reclassification into groups H10D62/822, H10D62/832, H10D62/834 and H10D62/881.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/83	H10D62/83		4434
H10D62/8303	10	{Diamond}<br><br><u>WARNING</u><br>Group H10D62/8303 is impacted by reclassification into group H10D62/882.<br>Groups H10D62/8303 and H10D62/882 should be considered in order to perform a complete search.	H10D62/83	H10D62/83		1301
H10D62/832	10	being Group IV materials comprising two or more elements, e.g. SiGe<br><br><u>WARNING</u><br>Group H10D62/832 is incomplete pending reclassification of documents from group H10D62/83.<br>Groups H10D62/83 and H10D62/832 should be considered in order to perform a complete search.	H10D62/832	H10D62/832		1640
H10D62/8325	11	{Silicon carbide}	H10D62/832	H10D62/832		9262
H10D62/834	10	further characterised by the dopants<br><br><u>WARNING</u><br>Group H10D62/834 is incomplete pending reclassification of documents from group H10D62/83.<br>Groups H10D62/83 and H10D62/834 should be considered in order to perform a complete search.	H10D62/834	H10D62/834		1765
H10D62/84	9	being selenium or tellurium only&#160;<br><br><u>NOTE</u><br><br>This group does not cover chemical compounds of selenium or tellurium.	H10D62/84	H10D62/84		90
H10D62/85	9	being Group III-V&#160;materials, e.g. GaAs<br><br><u>WARNING</u><br>Group H10D62/85 is impacted by reclassification into groups H10D62/824, H10D62/852 and H10D62/854.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/85	H10D62/85		3428
H10D62/8503	10	{Nitride Group III-V materials, e.g. AlN or GaN}<br><br><u>WARNING</u><br>Group H10D62/8503 is impacted by reclassification into group H10D62/881.<br>Groups H10D62/8503 and H10D62/881 should be considered in order to perform a complete search.	H10D62/85	H10D62/85		9514
H10D62/852	10	being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP<br><br><u>WARNING</u><br>Group H10D62/852 is incomplete pending reclassification of documents from group H10D62/85.<br>Groups H10D62/85 and H10D62/852 should be considered in order to perform a complete search.	H10D62/852	H10D62/852		802
H10D62/854	10	further characterised by the dopants<br><br><u>WARNING</u><br>Group H10D62/854 is incomplete pending reclassification of documents from group H10D62/85.<br>Groups H10D62/85 and H10D62/854 should be considered in order to perform a complete search.	H10D62/854	H10D62/854		1118
H10D62/86	9	being Group II-VI&#160;materials, e.g. ZnO<br><br><u>WARNING</u><br>Group H10D62/86 is impacted by reclassification into groups H10D62/826, H10D62/8603, H10D62/862 and H10D62/864.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/86	H10D62/86		429
H10D62/8603	10	{Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe}<br><br><u>WARNING</u><br>Group H10D62/8603 is incomplete pending reclassification of documents from group H10D62/86.<br>Groups H10D62/86 and H10D62/8603 should be considered in order to perform a complete search.	H10D62/86	H10D62/86		67
H10D62/862	10	being Group II-VI materials comprising three or more elements, e.g. CdZnTe<br><br><u>WARNING</u><br>Group H10D62/862 is incomplete pending reclassification of documents from group H10D62/86.<br>Groups H10D62/86 and H10D62/862 should be considered in order to perform a complete search.	H10D62/862	H10D62/862		85
H10D62/864	10	further characterised by the dopants<br><br><u>WARNING</u><br>Group H10D62/864 is incomplete pending reclassification of documents from group H10D62/86.<br>Groups H10D62/86 and H10D62/864 should be considered in order to perform a complete search.	H10D62/864	H10D62/864		108
H10D62/871	9	{being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI}<br><br><u>WARNING</u><br>Group H10D62/871 is incomplete pending reclassification of documents from group H10D62/80. <br>Group H10D62/871 is also impacted by reclassification into groups H10D62/82, H10D62/8281 and H10D62/883.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/80	H10D62/871		101
H10D62/874	9	{being Pb compounds or alloys, e.g. PbO}<br><br><u>WARNING</u><br>Group H10D62/874 is incomplete pending reclassification of documents from group H10D62/80. <br>Group H10D62/874 is also impacted by reclassification into groups H10D62/82, H10D62/8281 and H10D62/883.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/80	H10D62/874		36
H10D62/875	9	{being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)}<br><br><u>WARNING</u><br>Group H10D62/875 is incomplete pending reclassification of documents from group H10D62/80.<br>Groups H10D62/80 and H10D62/875 should be considered in order to perform a complete search.	H10D62/80	H10D62/875		396
H10D62/881	9	{being a two-dimensional material}<br><br><u>WARNING</u><br>Group H10D62/881 is incomplete pending reclassification of documents from groups H10D62/80, H10D62/83 and H10D62/8503.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/80	H10D62/881		68
H10D62/882	10	{Graphene}<br><br><u>WARNING</u><br>Group H10D62/882 is incomplete pending reclassification of documents from group H10D62/8303.<br>Groups H10D62/8303 and H10D62/882 should be considered in order to perform a complete search.	H10D62/80	H10D62/882		1799
H10D62/883	10	{Transition metal dichalcogenides, e.g. MoSe2}<br><br><u>WARNING</u><br>Group H10D62/883 is incomplete pending reclassification of documents from groups H10D62/80, H10D62/871 and H10D62/874.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D62/80	H10D62/883		187
H10D64/00	7	Electrodes of devices having potential barriers	H10D64/00	H10D64/00		366
H10D64/01	8	Manufacture or treatment<br><br><u>NOTE</u><br><br>Processes or apparatus specially adapted for the manufacture or treatment of devices, or parts thereof, covered by class H10, which are generically applicable to these devices are covered by subclass H10P	H10D64/01	H10D64/01		5361
H10D64/011	9	{of electrodes ohmically coupled to a semiconductor}<br><br><u>WARNING</u><br>Group H10D64/011 is incomplete pending reclassification of documents from group H10P14/47. Group H10D64/011 is also impacted by reclassification into groups H10D64/0111 - H10D64/0115, H10D64/0116 - H10D64/0118, H10D64/012 - H10D64/0126 and H10D64/013 - H10D64/01366. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		6312
H10D64/0111	10	{to Group IV semiconductors}<br><br><u>WARNING</u><br>Groups H10D64/0111 and H10D64/0113 are incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011, H10D64/0111 and H10D64/0113 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		508
H10D64/0112	11	{using conductive layers comprising silicides}<br><br><u>WARNING</u><br>Group H10D64/0112 is incomplete pending reclassification of documents from group H10D64/011. Group H10D64/0112 is also impacted by reclassification into group H10D64/01125. <br>Groups H10D64/011, H10D64/0112 and H10D64/01125 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		4215
H10D64/01125	12	{the silicides being formed by chemical reaction with the semiconductor after the contact hole formation}<br><br><u>WARNING</u><br>Group H10D64/01125 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0112. <br>Groups H10D64/011, H10D64/0112 and H10D64/01125 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		494
H10D64/0113	11	{the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}	H10D64/01	H10D64/01		1252
H10D64/0114	11	{to diamond, semiconducting diamond-like carbon or graphene}<br><br><u>WARNING</u><br>Group H10D64/0114 is incomplete pending reclassification of documents from group H10D64/011. Group H10D64/0114 is also impacted by reclassification into groups H10D64/0122 and H10D64/01364. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		151
H10D64/0115	11	{to silicon carbide}<br><br><u>WARNING</u><br>Group H10D64/0115 is incomplete pending reclassification of documents from group H10D64/011. Group H10D64/0115 is also impacted by reclassification into groups H10D64/0123 and H10D64/01366. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		675
H10D64/0116	10	{to Group III-V semiconductors}<br><br><u>WARNING</u><br>Group H10D64/0116 is incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011 and H10D64/0116 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		726
H10D64/0117	11	{characterised by the sectional shape, e.g. T or inverted T}<br><br><u>WARNING</u><br>Group H10D64/0117 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0125. <br>Groups H10D64/011, H10D64/0125 and H10D64/0117 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		
H10D64/0118	12	{asymmetrical sectional shape}<br><br><u>WARNING</u><br>Group H10D64/0118 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0126. <br>Groups H10D64/011, H10D64/0126 and H10D64/0118 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		
H10D64/012	9	{of electrodes comprising a Schottky barrier to a semiconductor}<br><br><u>WARNING</u><br>Group H10D64/012 is incomplete pending reclassification of documents from groups H10D64/011 and H10P14/47. <br>Groups H10D64/011, H10P14/47 and H10D64/012 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		1
H10D64/0121	10	{to Group IV semiconductors}<br><br><u>WARNING</u><br>Group H10D64/0121 is incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011 and H10D64/0121 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		241
H10D64/0122	11	{to diamond, semiconducting diamond-like carbon or graphene}<br><br><u>WARNING</u><br>Group H10D64/0122 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0114. <br>Groups H10D64/011, H10D64/0114 and H10D64/0122 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		34
H10D64/0123	11	{to silicon carbide}<br><br><u>WARNING</u><br>Group H10D64/0123 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0115. <br>Groups H10D64/011, H10D64/0115 and H10D64/0123 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		210
H10D64/0124	10	{to Group III-V semiconductors}<br><br><u>WARNING</u><br>Group H10D64/0124 is incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011 and H10D64/0124 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		329
H10D64/0125	11	{characterised by the sectional shape, e.g. T or inverted T}<br><br><u>WARNING</u><br>Group H10D64/0125 is incomplete pending reclassification of documents from group H10D64/011. Group H10D64/0125 is also impacted by reclassification into groups H10D64/0117 and H10D64/0136. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		578
H10D64/0126	12	{the sectional shape being asymmetrical}<br><br><u>WARNING</u><br>Group H10D64/0126 is incomplete pending reclassification of documents from group H10D64/011. Group H10D64/0126 is also impacted by reclassification into groups H10D64/0118 and H10D64/01362. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		81
H10D64/013	9	{of electrodes having a conductor capacitively coupled to a semiconductor by an insulator}<br><br><u>WARNING</u><br>Group H10D64/013 is incomplete pending reclassification of documents from groups H10D64/011 and H10P14/47. <br>Groups H10D64/011, H10P14/47 and H10D64/013 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		1194
H10D64/01302	10	{the insulator being formed after the semiconductor body, the semiconductor being silicon}<br><br><u>WARNING</u><br>Groups H10D64/01302 - H10D64/01354 are incomplete pending reclassification of documents from group H10D64/011. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/01	H10D64/01		213
H10D64/01304	11	{characterised by the conductor}	H10D64/01	H10D64/01		233
H10D64/01306	12	{the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon}	H10D64/01	H10D64/01		1356
H10D64/01308	13	{the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal}	H10D64/01	H10D64/01		403
H10D64/0131	14	{the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation}	H10D64/01	H10D64/01		1563
H10D64/01312	14	{the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition}	H10D64/01	H10D64/01		1170
H10D64/01314	12	{the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator}	H10D64/01	H10D64/01		229
H10D64/01316	12	{the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al}	H10D64/01	H10D64/01		743
H10D64/01318	12	{the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314)}	H10D64/01	H10D64/01		1815
H10D64/0132	13	{the conductor being a metallic silicide}	H10D64/01	H10D64/01		691
H10D64/01322	12	{the conductor contacting the insulator having a lateral variation in doping, composition or deposition steps}	H10D64/01	H10D64/01		233
H10D64/01324	12	{characterised by the sectional shape, e.g. T or inverted-T}	H10D64/01	H10D64/01		1219
H10D64/01326	12	{Aspects related to lithography, isolation or planarisation of the conductor}	H10D64/01	H10D64/01		1490
H10D64/01328	13	{by defining the conductor using a sidewall spacer mask, a transformation under a mask or a plating at a sidewall}	H10D64/01	H10D64/01		311
H10D64/0133	13	{at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall}	H10D64/01	H10D64/01		295
H10D64/01332	11	{Making the insulator}	H10D64/01	H10D64/01		593
H10D64/01334	12	{by defining the insulator using a sidewall spacer mask, a transformation under a mask or a plating at a sidewall}	H10D64/01	H10D64/01		667
H10D64/01336	12	{on single crystalline silicon, e.g. chemical oxidation using a liquid}	H10D64/01	H10D64/01		504
H10D64/01338	13	{with a treatment, e.g. annealing, after the formation of the conductor}	H10D64/01	H10D64/01		729
H10D64/0134	13	{with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor}	H10D64/01	H10D64/01		1731
H10D64/01342	13	{by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence)}	H10D64/01	H10D64/01		2057
H10D64/01344	13	{in a nitrogen-containing ambient, e.g. N2O oxidation}	H10D64/01	H10D64/01		1626
H10D64/01346	13	{in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer (H10D64/01344 takes precedence)}	H10D64/01	H10D64/01		817
H10D64/01348	12	{with substrate doping, e.g. N, Ge or C implantation, before formation of the insulator}	H10D64/01	H10D64/01		227
H10D64/0135	12	{by deposition of a layer, e.g. metal, metal compound or polysilicon, followed by transformation thereof into the insulator}	H10D64/01	H10D64/01		264
H10D64/01352	12	{with sacrificial oxide}	H10D64/01	H10D64/01		282
H10D64/01354	11	{passivation or protection of the electrode, e.g. using re-oxidation}	H10D64/01	H10D64/01		1207
H10D64/01356	10	{the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence)}<br><br><u>WARNING</u><br>Group H10D64/01356 is incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011 and H10D64/01356 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		272
H10D64/01358	10	{the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material}<br><br><u>WARNING</u><br>Group H10D64/01358 is incomplete pending reclassification of documents from group H10D64/011. <br>Groups H10D64/011 and H10D64/01358 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		422
H10D64/0136	11	{characterised by the sectional shape, e.g. T or inverted-T}<br><br><u>WARNING</u><br>Group H10D64/0136 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0125. <br>Groups H10D64/011, H10D64/0125 and H10D64/0136 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		
H10D64/01362	12	{asymmetrical sectional shape}<br><br><u>WARNING</u><br>Group H10D64/01362 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0126. <br>Groups H10D64/011, H10D64/0126 and H10D64/01362 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		
H10D64/01364	10	{the semiconductor being diamond, semiconducting diamond-like carbon or graphene}<br><br><u>WARNING</u><br>Group H10D64/01364 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0114. <br>Groups H10D64/011, H10D64/0114 and H10D64/01364 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		78
H10D64/01366	10	{the semiconductor being silicon carbide}<br><br><u>WARNING</u><br>Group H10D64/01366 is incomplete pending reclassification of documents from groups H10D64/011 and H10D64/0115. <br>Groups H10D64/011, H10D64/0115 and H10D64/01366 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		619
H10D64/015	9	{removing at least parts of gate spacers, e.g. disposable spacers}	H10D64/01	H10D64/01		2708
H10D64/017	9	{using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}<br><br><u>WARNING</u><br>Group H10D64/017 is incomplete pending reclassification of documents from group H10D30/0273.<br>Groups H10D30/0273 and H10D64/017 should be considered in order to perform a complete search.	H10D64/01	H10D64/01		11909
H10D64/018	9	{Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates}	H10D64/01	H10D64/01		2013
H10D64/021	9	{using multiple gate spacer layers, e.g. bilayered sidewall spacers}	H10D64/01	H10D64/021		5471
H10D64/025	9	{forming recessed gates, e.g. by using local oxidation}	H10D64/01	H10D64/025		343
H10D64/027	10	{by etching at gate locations}	H10D64/01	H10D64/027		2660
H10D64/031	9	{of data-storage electrodes}	H10D64/01	H10D64/031		59
H10D64/033	10	{comprising ferroelectric layers}	H10D64/01	H10D64/033		1005
H10D64/035	10	{comprising conductor-insulator-conductor-insulator-semiconductor structures}	H10D64/01	H10D64/035		4690
H10D64/037	10	{comprising charge-trapping insulators}	H10D64/01	H10D64/037		3227
H10D64/111	8	{Field plates}	H10D64/00	H10D64/111		4243
H10D64/112	9	{comprising multiple field plate segments}	H10D64/00	H10D64/112		2394
H10D64/115	9	{Resistive field plates, e.g. semi-insulating field plates}	H10D64/00	H10D64/115		488
H10D64/117	9	{Recessed field plates, e.g. trench field plates or buried field plates}	H10D64/00	H10D64/117		4165
H10D64/118	8	{Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges}	H10D64/00	H10D64/118		823
H10D64/20	8	Electrodes characterised by their shapes, relative sizes or dispositions&#160;	H10D64/20	H10D64/20		1014
H10D64/205	9	{Nanosized electrodes, e.g. nanowire electrodes}	H10D64/20	H10D64/20		361
H10D64/23	9	Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes<br><br><u>WARNING</u><br>Group H10D64/23 is impacted by reclassification into group H10D64/232.<br>Groups H10D64/23 and H10D64/232 should be considered in order to perform a complete search.	H10D64/23	H10D64/23		1537
H10D64/231	10	{Emitter or collector electrodes for bipolar transistors}	H10D64/23	H10D64/23		1152
H10D64/232	10	{Emitter electrodes for IGBTs}<br><br><u>WARNING</u><br>Group H10D64/232 is incomplete pending reclassification of documents from group H10D64/23.<br>Groups H10D64/23 and H10D64/232 should be considered in order to perform a complete search.	H10D64/23	H10D64/23		339
H10D64/233	10	{Cathode or anode electrodes for thyristors}	H10D64/23	H10D64/23		222
H10D64/251	10	{Source or drain electrodes for field-effect devices}	H10D64/23	H10D64/251		2652
H10D64/252	11	{for vertical or pseudo-vertical devices}<br><br><u>WARNING</u><br>Group H10D64/252 is impacted by reclassification into groups H10D64/2523 and H10D64/2527.<br>Groups H10D64/252, H10D64/2523 and H10D64/2527 should be considered in order to perform a complete search.	H10D64/23	H10D64/252		1767
H10D64/2523	12	{for vertical devices wherein the source or drain electrodes extend entirely through semiconductor bodies}<br><br><u>WARNING</u><br>Group H10D64/2523 is incomplete pending reclassification of documents from group H10D64/252.<br>Groups H10D64/252 and H10D64/2523 should be considered in order to perform a complete search.	H10D64/23	H10D64/2523		25
H10D64/2527	12	{for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies}<br><br><u>WARNING</u><br>Group H10D64/2527 is incomplete pending reclassification of documents from groups H10D64/252 and H10D64/256.<br>Groups H10D64/252, H10D64/256 and H10D64/2527 should be considered in order to perform a complete search.	H10D64/23	H10D64/2527		1484
H10D64/254	11	{for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts}<br><br><u>WARNING</u><br>Group H10D64/254 is impacted by reclassification into groups H10D64/256 - H10D64/2565 and H10D64/257.<br>Groups H10D64/254, H10D64/256 - H10D64/2565 and H10D64/257 should be considered in order to perform a complete search.	H10D64/23	H10D64/254		1349
H10D64/256	11	{for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}<br><br><u>WARNING</u><br>Group H10D64/256 is incomplete pending reclassification of documents from groups H10D64/254 and H10D64/257. <br>Group H10D64/256 is also impacted by reclassification into group H10D64/2527.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D64/23	H10D64/256		4417
H10D64/2565	12	{wherein the source or drain regions are on a top side of the semiconductor bodies and the recessed source or drain electrodes are on a bottom side of the semiconductor bodies}<br><br><u>WARNING</u><br>Group H10D64/2565 is incomplete pending reclassification of documents from group H10D64/254.<br>Groups H10D64/254 and H10D64/2565 should be considered in order to perform a complete search.	H10D64/23	H10D64/2565		94
H10D64/257	11	{for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)}<br><br><u>WARNING</u><br>Group H10D64/257 is incomplete pending reclassification of documents from group H10D64/254. <br>Group H10D64/257 is also impacted by reclassification into group H10D64/256.<br>Groups H10D64/254, H10D64/257 and H10D64/256 should be considered in order to perform a complete search.	H10D64/23	H10D64/257		1625
H10D64/258	11	{characterised by the relative positions of the source or drain electrodes with respect to the gate electrode}	H10D64/23	H10D64/258		1845
H10D64/259	12	{Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric}	H10D64/23	H10D64/259		997
H10D64/27	9	Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates	H10D64/27	H10D64/27		1115
H10D64/281	10	{Base electrodes for bipolar transistors}	H10D64/27	H10D64/281		635
H10D64/291	10	{Gate electrodes for thyristors}	H10D64/27	H10D64/291		218
H10D64/311	10	{Gate electrodes for field-effect devices}	H10D64/27	H10D64/311		635
H10D64/411	11	{for FETs}	H10D64/27	H10D64/411		2416
H10D64/511	12	{for IGFETs}	H10D64/27	H10D64/511		1318
H10D64/512	13	{Disposition of the gate electrodes, e.g. buried gates}	H10D64/27	H10D64/512		3445
H10D64/513	14	{within recesses in the substrate, e.g. trench gates, groove gates or buried gates}	H10D64/27	H10D64/513		8964
H10D64/514	13	{characterised by the insulating layers}	H10D64/27	H10D64/514		2811
H10D64/516	14	{the thicknesses being non-uniform}	H10D64/27	H10D64/516		4133
H10D64/517	13	{characterised by the conducting layers}	H10D64/27	H10D64/517		1340
H10D64/518	14	{characterised by their lengths or sectional shapes}	H10D64/27	H10D64/518		4433
H10D64/519	14	{characterised by their top-view geometrical layouts}	H10D64/27	H10D64/519		3505
H10D64/529	10	{Electrodes for IGFETs contacting substrate regions, e.g. for grounding or preventing parasitic effects}<br><br><u>WARNING</u><br>Group H10D64/529 is incomplete pending reclassification of documents from group H10D62/378.<br>Groups H10D62/378 and H10D64/529 should be considered in order to perform a complete search.	H10D64/27	H10D64/529		17
H10D64/60	8	Electrodes characterised by their materials	H10D64/60	H10D64/60		459
H10D64/602	9	{Heterojunction gate electrodes for FETs}	H10D64/60	H10D64/60		412
H10D64/605	9	{Source, drain, or gate electrodes for FETs comprising highly resistive materials}	H10D64/60	H10D64/60		239
H10D64/608	9	{being superconducting}	H10D64/60	H10D64/60		54
H10D64/62	9	Electrodes ohmically coupled to a semiconductor	H10D64/62	H10D64/62		6885
H10D64/64	9	Electrodes comprising a Schottky barrier to a semiconductor	H10D64/64	H10D64/64		2362
H10D64/647	10	{Schottky drain or source electrodes for IGFETs}	H10D64/64	H10D64/64		477
H10D64/649	10	{Schottky drain or source electrodes for FETs having rectifying junction gate electrodes}	H10D64/64	H10D64/64		29
H10D64/66	9	Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes	H10D64/66	H10D64/66		638
H10D64/661	10	{the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation (having lateral variation in the gate structure H10D64/671)}	H10D64/66	H10D64/66		1292
H10D64/662	11	{the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures}	H10D64/66	H10D64/66		799
H10D64/663	12	{the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates}	H10D64/66	H10D64/66		1713
H10D64/664	12	{the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer}	H10D64/66	H10D64/66		719
H10D64/665	10	{the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671)}	H10D64/66	H10D64/66		1178
H10D64/666	11	{the conductor further comprising additional layers}	H10D64/66	H10D64/66		655
H10D64/667	10	{the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}<br><br><u>WARNING</u><br>Group H10D64/667 is impacted by reclassification into group H10D64/669.<br>Groups H10D64/667 and H10D64/669 should be considered in order to perform a complete search.	H10D64/66	H10D64/66		3394
H10D64/668	11	{the layer being a silicide, e.g. TiSi2}<br><br><u>WARNING</u><br>Group H10D64/668 is impacted by reclassification into group H10D64/669.<br>Groups H10D64/668 and H10D64/669 should be considered in order to perform a complete search.	H10D64/66	H10D64/66		594
H10D64/669	11	{the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN}<br><br><u>WARNING</u><br>Group H10D64/669 is incomplete pending reclassification of documents from groups H10D64/667 and H10D64/668.<br>Groups H10D64/667, H10D64/668 and H10D64/669 should be considered in order to perform a complete search.	H10D64/66	H10D64/66		79
H10D64/671	10	{the conductor having lateral variation in doping or structure}<br><br><u>WARNING</u><br>Group H10D64/671 is impacted by reclassification into group H10D64/675.<br>Groups H10D64/671 and H10D64/675 should be considered in order to perform a complete search.	H10D64/66	H10D64/671		1780
H10D64/675	10	{Gate sidewall spacers}<br><br><u>WARNING</u><br>Group H10D64/675 is incomplete pending reclassification of documents from group H10D64/671.<br>Groups H10D64/671 and H10D64/675 should be considered in order to perform a complete search.	H10D64/66	H10D64/675		36
H10D64/679	11	{comprising air gaps}	H10D64/66	H10D64/679		490
H10D64/68	10	characterised by the insulator, e.g. by the gate insulator	H10D64/68	H10D64/68		1358
H10D64/681	11	{having a compositional variation, e.g. multilayered}	H10D64/68	H10D64/68		811
H10D64/683	12	{being parallel to the channel plane}	H10D64/68	H10D64/68		427
H10D64/685	12	{being perpendicular to the channel plane}	H10D64/68	H10D64/68		4176
H10D64/687	11	{having cavities, e.g. porous gate dielectrics having gasses therein}	H10D64/68	H10D64/68		122
H10D64/689	11	{having ferroelectric layers}	H10D64/68	H10D64/68		1556
H10D64/691	11	{comprising metallic compounds, e.g. metal oxides or metal silicates&#160; (insulators comprising nitrogen H10D64/693)}	H10D64/68	H10D64/691		5376
H10D64/693	11	{the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials}	H10D64/68	H10D64/693		3218
H10D80/00	7	Assemblies of multiple devices comprising at least one device covered by this subclass<br><br><u>WARNING</u><br>Group H10D80/00 is incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00 and H10D80/00 should be considered in order to perform a complete search.	H10D80/00	H10D80/00		40
H10D80/20	8	the at least one device being covered by groups H10D1/00 - H10D48/00, e.g. assemblies comprising capacitors, power FETs or Schottky diodes	H10D80/20	H10D80/20		123
H10D80/211	9	{Resistors, capacitors or inductors covered by H10D1/00}	H10D80/20	H10D80/211		15
H10D80/213	10	{Resistors}	H10D80/20	H10D80/213		9
H10D80/215	10	{Capacitors}	H10D80/20	H10D80/215		29
H10D80/231	9	{Diodes covered by H10D8/00}	H10D80/20	H10D80/231		38
H10D80/251	9	{FETs covered by H10D30/00, e.g. power FETs}	H10D80/20	H10D80/251		146
H10D80/30	8	the at least one device being covered by groups H10D84/00 - H10D86/00, e.g. assemblies comprising integrated circuit processor chips	H10D80/30	H10D80/30		352
H10D84/00	7	Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D84/00	H10D84/00		5031
H10D84/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Group H10D84/01 is impacted by reclassification into groups H10D84/0102 - H10D84/0105, H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123 - H10D84/0195, H10D84/0198, H10D84/02 - H10D84/08 and H10D89/60 - H10D89/931. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		5424
H10D84/0102	9	{of thyristors having built-in components, e.g. thyristor having built-in diode}<br><br><u>WARNING</u><br>Groups H10D84/0102 and H10D84/0105 are incomplete pending reclassification of documents from group H10D84/01. <br>Groups H10D84/01, H10D84/0102 and H10D84/0105 should be considered in order to perform a complete search.	H10D84/01	H10D84/01		68
H10D84/0105	10	{the built-in components being field-effect devices}	H10D84/01	H10D84/01		76
H10D84/0107	9	{Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs}<br><br><u>WARNING</u><br>Groups H10D84/0107 and H10D84/0109 are incomplete pending reclassification of documents from groups H10D84/01, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		260
H10D84/0109	10	{the at least one component covered by H10D12/00 or H10D30/00 being a MOS device}	H10D84/01	H10D84/01		1857
H10D84/0112	9	{Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs}<br><br><u>WARNING</u><br>Groups H10D84/0112 - H10D84/0121 are incomplete pending reclassification of documents from groups H10D84/01, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		763
H10D84/0114	10	{the components including vertical BJTs and lateral BJTs}	H10D84/01	H10D84/01		72
H10D84/0116	10	{the components including integrated injection logic [I2L]}	H10D84/01	H10D84/01		162
H10D84/0119	10	{the components including complementary BJTs}	H10D84/01	H10D84/01		117
H10D84/0121	11	{the complementary BJTs being vertical BJTs}	H10D84/01	H10D84/01		216
H10D84/0123	9	{Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs}<br><br><u>WARNING</u><br>Groups H10D84/0123 - H10D84/0195 are incomplete pending reclassification of documents from groups H10D84/01, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		345
H10D84/0126	10	{the components including insulated gates, e.g. IGFETs}	H10D84/01	H10D84/01		1322
H10D84/0128	11	{Manufacturing their channels}	H10D84/01	H10D84/01		3272
H10D84/013	11	{Manufacturing their source or drain regions, e.g. silicided source or drain regions}	H10D84/01	H10D84/01		3944
H10D84/0133	12	{Manufacturing common source or drain regions between multiple IGFETs}	H10D84/01	H10D84/01		1096
H10D84/0135	11	{Manufacturing their gate conductors}	H10D84/01	H10D84/01		3741
H10D84/0137	12	{the gate conductors being silicided}	H10D84/01	H10D84/01		498
H10D84/014	12	{the gate conductors having different materials or different implants}	H10D84/01	H10D84/01		947
H10D84/0142	12	{the gate conductors having different shapes or dimensions}	H10D84/01	H10D84/01		1315
H10D84/0144	11	{Manufacturing their gate insulating layers}	H10D84/01	H10D84/01		3098
H10D84/0147	11	{Manufacturing their gate sidewall spacers}	H10D84/01	H10D84/01		2521
H10D84/0149	11	{Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}	H10D84/01	H10D84/01		5835
H10D84/0151	11	{Manufacturing their isolation regions}<br><br><u>WARNING</u><br>Group H10D84/0151 is incomplete pending reclassification of documents from groups H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>Group H10D84/0151 is also impacted by reclassification into group H10D84/0153.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		4889
H10D84/0153	12	{using gate cut processes}<br><br><u>WARNING</u><br>Group H10D84/0153 is incomplete pending reclassification of documents from groups H10D84/0151, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		232
H10D84/0156	11	{Manufacturing their doped wells}<br><br><u>WARNING</u><br>Group H10D84/0156 is incomplete pending reclassification of documents from groups H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>Group H10D84/0156 is also impacted by reclassification into group H10D62/299.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		828
H10D84/0158	11	{the components including FinFETs}	H10D84/01	H10D84/01		5883
H10D84/016	11	{the components including vertical IGFETs}	H10D84/01	H10D84/01		1460
H10D84/0163	11	{the components including enhancement-mode IGFETs and depletion-mode IGFETs}	H10D84/01	H10D84/01		214
H10D84/0165	11	{the components including complementary IGFETs, e.g. CMOS devices}	H10D84/01	H10D84/01		2292
H10D84/0167	12	{Manufacturing their channels}	H10D84/01	H10D84/01		6054
H10D84/017	12	{Manufacturing their source or drain regions, e.g. silicided source or drain regions}	H10D84/01	H10D84/01		5307
H10D84/0172	12	{Manufacturing their gate conductors}	H10D84/01	H10D84/01		2374
H10D84/0174	13	{the gate conductors being silicided}	H10D84/01	H10D84/01		778
H10D84/0177	13	{the gate conductors having different materials or different implants}	H10D84/01	H10D84/01		3202
H10D84/0179	13	{the gate conductors having different shapes or dimensions}	H10D84/01	H10D84/01		710
H10D84/0181	12	{Manufacturing their gate insulating layers}	H10D84/01	H10D84/01		2204
H10D84/0184	12	{Manufacturing their gate sidewall spacers}	H10D84/01	H10D84/01		1805
H10D84/0186	12	{Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}	H10D84/01	H10D84/01		3263
H10D84/0188	12	{Manufacturing their isolation regions}	H10D84/01	H10D84/01		3538
H10D84/0191	12	{Manufacturing their doped wells}	H10D84/01	H10D84/01		1720
H10D84/0193	12	{the components including FinFETs}	H10D84/01	H10D84/01		4235
H10D84/0195	12	{the components including vertical IGFETs}	H10D84/01	H10D84/01		886
H10D84/0198	9	{Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices}<br><br><u>WARNING</u><br>Group H10D84/0198 is incomplete pending reclassification of documents from groups H10D84/01, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/01	H10D84/01		153
H10D84/02	9	characterised by using material-based technologies<br><br><u>WARNING</u><br>Groups H10D84/02 - H10D84/08 are incomplete pending reclassification of documents from group H10D84/01. Group H10D84/02 is also impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198, H10D84/03 and H10D88/01. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/02	H10D84/02		160
H10D84/03	10	using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology<br><br><u>WARNING</u><br>Group H10D84/03 is incomplete pending reclassification of documents from groups H10D84/01 and H10D84/02.<br>Groups H10D84/01, H10D84/02 and H10D84/03 should be considered in order to perform a complete search.	H10D84/03	H10D84/03		39
H10D84/032	11	{using diamond technology}<br><br><u>WARNING</u><br>Group H10D84/032 is impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198 and H10D88/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/03	H10D84/03		19
H10D84/035	11	{using silicon carbide [SiC] technology}<br><br><u>WARNING</u><br>Group H10D84/035 is incomplete pending reclassification of documents from group H10D84/01. <br>Group H10D84/035 is also impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198 and H10D88/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/03	H10D84/03		343
H10D84/038	11	{using silicon technology, e.g. SiGe}<br><br><u>WARNING</u><br>Group H10D84/038 is incomplete pending reclassification of documents from group H10D84/01.<br>Groups H10D84/01 and H10D84/038 should be considered in order to perform a complete search.	H10D84/03	H10D84/03		34905
H10D84/05	10	using Group III-V technology<br><br><u>WARNING</u><br>Group H10D84/05 is incomplete pending reclassification of documents from group H10D84/01. Group H10D84/05 is also impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198 and H10D88/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/05	H10D84/05		1734
H10D84/07	10	using Group II-VI technology<br><br><u>WARNING</u><br>Group H10D84/07 is incomplete pending reclassification of documents from group H10D84/01. <br>Group H10D84/07 is also impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198 and H10D88/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/07	H10D84/07		28
H10D84/08	10	using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies<br><br><u>WARNING</u><br>Group H10D84/08 is incomplete pending reclassification of documents from group H10D84/01. <br>Group H10D84/08 is also impacted by reclassification into groups H10D84/0107 - H10D84/0109, H10D84/0112 - H10D84/0121, H10D84/0123, H10D84/0126, H10D84/0128, H10D84/013 - H10D84/0133, H10D84/0135 - H10D84/0142, H10D84/0144, H10D84/0147, H10D84/0151 - H10D84/0153, H10D84/0156, H10D84/0158, H10D84/016, H10D84/0163, H10D84/0165 - H10D84/0195, H10D84/0198 and H10D88/01.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/08	H10D84/08		1017
H10D84/101	8	{Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode}<br><br><u>WARNING</u><br>Group H10D84/101 is incomplete pending reclassification of documents from group H10D30/64.<br>Groups H10D30/64 and H10D84/101 should be considered in order to perform a complete search.	H10D84/00	H10D84/101		29
H10D84/121	9	{BJTs having built-in components}	H10D84/00	H10D84/121		308
H10D84/125	10	{the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor}	H10D84/00	H10D84/125		198
H10D84/131	9	{Thyristors having built-in components}	H10D84/00	H10D84/131		112
H10D84/133	10	{the built-in components being capacitors or resistors}	H10D84/00	H10D84/133		137
H10D84/135	10	{the built-in components being diodes}	H10D84/00	H10D84/135		132
H10D84/136	11	{in anti-parallel configurations, e.g. reverse current thyristor [RCT]}	H10D84/00	H10D84/136		179
H10D84/138	10	{the built-in components being FETs}	H10D84/00	H10D84/138		173
H10D84/141	9	{VDMOS having built-in components}	H10D84/00	H10D84/141		909
H10D84/143	10	{the built-in components being PN junction diodes}	H10D84/00	H10D84/143		527
H10D84/144	11	{in antiparallel diode configurations}	H10D84/00	H10D84/144		376
H10D84/146	10	{the built-in components being Schottky barrier diodes}	H10D84/00	H10D84/146		887
H10D84/148	10	{the built-in components being breakdown diodes, e.g. Zener diodes}	H10D84/00	H10D84/148		423
H10D84/151	9	{LDMOS having built-in components}	H10D84/00	H10D84/151		264
H10D84/153	10	{the built-in component being PN junction diodes}	H10D84/00	H10D84/153		129
H10D84/154	11	{in antiparallel diode configurations}	H10D84/00	H10D84/154		37
H10D84/156	10	{the built-in components being Schottky barrier diodes}	H10D84/00	H10D84/156		97
H10D84/158	10	{the built-in components being breakdown diodes, e.g. Zener diodes}	H10D84/00	H10D84/158		64
H10D84/161	9	{IGBT having built-in components}<br><br><u>WARNING</u><br>Group H10D84/161 is incomplete pending reclassification of documents from group H10D12/411.<br>Groups H10D12/411 and H10D84/161 should be considered in order to perform a complete search.	H10D84/00	H10D84/161		147
H10D84/201	8	{characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits}<br><br><u>WARNING</u><br>Group H10D84/201 is incomplete pending reclassification of documents from group H10D86/85.<br>Groups H10D86/85 and H10D84/201 should be considered in order to perform a complete search.	H10D84/00	H10D84/201		11
H10D84/204	9	{of combinations of diodes or capacitors or resistors}	H10D84/00	H10D84/204		316
H10D84/206	10	{of combinations of capacitors and resistors}<br><br><u>WARNING</u><br>Group H10D84/206 is incomplete pending reclassification of documents from group H10D86/85. <br>Group H10D84/206 is also impacted by reclassification into groups H10D84/209 and H10D84/212.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/00	H10D84/206		326
H10D84/209	10	{of only resistors}<br><br><u>WARNING</u><br>Group H10D84/209 is incomplete pending reclassification of documents from groups H10D84/206 and H10D86/85.<br>Groups H10D84/206, H10D86/85 and H10D84/209 should be considered in order to perform a complete search.	H10D84/00	H10D84/209		966
H10D84/212	10	{of only capacitors}<br><br><u>WARNING</u><br>Group H10D84/212 is incomplete pending reclassification of documents from groups H10D84/206 and H10D86/85.<br>Groups H10D84/206, H10D86/85 and H10D84/212 should be considered in order to perform a complete search.	H10D84/00	H10D84/212		1268
H10D84/215	11	{of only varactors}	H10D84/00	H10D84/215		177
H10D84/217	11	{of only conductor-insulator-semiconductor capacitors}	H10D84/00	H10D84/217		189
H10D84/221	10	{of only diodes}	H10D84/00	H10D84/221		732
H10D84/40	8	characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs<br><br><u>WARNING</u><br>Group H10D84/40 is incomplete pending reclassification of documents from group H10D84/401. <br>Group H10D84/40 is also impacted by reclassification into group H10D84/80.<br>Groups H10D84/401, H10D84/40 and H10D84/80 should be considered in order to perform a complete search.	H10D84/40	H10D84/40		624
H10D84/401	9	{Combinations of FETs or IGBTs with BJTs}<br><br><u>WARNING</u><br>Group H10D84/401 is impacted by reclassification into group H10D84/40.<br>Groups H10D84/401 and H10D84/40 should be considered in order to perform a complete search.	H10D84/40	H10D84/40		2022
H10D84/403	10	{Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors}	H10D84/40	H10D84/40		529
H10D84/406	11	{Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors}	H10D84/40	H10D84/40		342
H10D84/409	11	{Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors}	H10D84/40	H10D84/40		133
H10D84/60	8	characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence)	H10D84/60	H10D84/60		266
H10D84/611	9	{Combinations of BJTs and one or more of diodes, resistors or capacitors}	H10D84/60	H10D84/611		228
H10D84/613	10	{Combinations of vertical BJTs and one or more of diodes, resistors or capacitors}	H10D84/60	H10D84/613		372
H10D84/615	11	{Combinations of vertical BJTs and one or more of resistors or capacitors}	H10D84/60	H10D84/615		484
H10D84/617	11	{Combinations of vertical BJTs and only diodes}	H10D84/60	H10D84/617		739
H10D84/619	10	{Combinations of lateral BJTs and one or more of diodes, resistors or capacitors}	H10D84/60	H10D84/619		109
H10D84/63	9	Combinations of vertical and lateral BJTs	H10D84/63	H10D84/63		289
H10D84/641	9	{Combinations of only vertical BJTs (vertical complementary BJTs H10D84/673)}	H10D84/60	H10D84/641		215
H10D84/642	10	{Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors}	H10D84/60	H10D84/642		409
H10D84/643	10	{Combinations of non-inverted vertical BJTs and inverted vertical BJTs}	H10D84/60	H10D84/643		51
H10D84/645	9	{Combinations of only lateral BJTs}<br><br><u>WARNING</u><br>Group H10D84/645 is impacted by reclassification into group H10D84/67.<br>Groups H10D84/645 and H10D84/67 should be considered in order to perform a complete search.	H10D84/60	H10D84/645		388
H10D84/65	9	Integrated injection logic	H10D84/65	H10D84/65		581
H10D84/652	10	{using vertical injector structures}	H10D84/65	H10D84/65		85
H10D84/655	10	{using field effect injector structures}	H10D84/65	H10D84/65		31
H10D84/658	10	{integrated in combination with analog structures}	H10D84/65	H10D84/65		248
H10D84/67	9	Complementary BJTs<br><br><u>WARNING</u><br>Group H10D84/67 is incomplete pending reclassification of documents from group H10D84/645.<br>Groups H10D84/645 and H10D84/67 should be considered in order to perform a complete search.	H10D84/67	H10D84/67		5
H10D84/673	10	{Vertical complementary BJTs}	H10D84/67	H10D84/67		344
H10D84/676	9	{Combinations of only thyristors}	H10D84/60	H10D84/67		214
H10D84/80	8	characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)<br><br><u>WARNING</u><br>Group H10D84/80 is incomplete pending reclassification of documents from group H10D84/40.<br>Groups H10D84/40 and H10D84/80 should be considered in order to perform a complete search.	H10D84/80	H10D84/80		1395
H10D84/811	9	{Combinations of field-effect devices and one or more diodes, capacitors or resistors}<br><br><u>WARNING</u><br>Group H10D84/811 is impacted by reclassification into groups H10D84/813 and H10D84/817.<br>Groups H10D84/811, H10D84/813 and H10D84/817 should be considered in order to perform a complete search.	H10D84/80	H10D84/811		5280
H10D84/813	10	{Combinations of field-effect devices and capacitor only}<br><br><u>WARNING</u><br>Group H10D84/813 is incomplete pending reclassification of documents from group H10D84/811.<br>Groups H10D84/811 and H10D84/813 should be considered in order to perform a complete search.	H10D84/80	H10D84/813		849
H10D84/817	10	{Combinations of field-effect devices and resistors only}<br><br><u>WARNING</u><br>Group H10D84/817 is incomplete pending reclassification of documents from group H10D84/811.<br>Groups H10D84/811 and H10D84/817 should be considered in order to perform a complete search.	H10D84/80	H10D84/817		679
H10D84/82	9	of only field-effect components	H10D84/82	H10D84/82		932
H10D84/83	10	of only insulated-gate FETs [IGFET]<br><br><u>WARNING</u><br>Group H10D84/83 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83125, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316, H10D84/832 - H10D84/833, H10D84/835, H10D84/836 and H10D84/837 - H10D84/839.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		7936
H10D84/8311	11	{the IGFETs characterised by having different channel structures}<br><br><u>WARNING</u><br>Group H10D84/8311 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		846
H10D84/8312	11	{the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions}<br><br><u>WARNING</u><br>Group H10D84/8312 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		368
H10D84/83125	11	{the IGFETs characterised by having shared source or drain regions}<br><br><u>WARNING</u><br>Group H10D84/83125 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834 and H10D84/84.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		341
H10D84/83135	11	{the IGFETs characterised by having different gate conductor materials or different gate conductor implants}<br><br><u>WARNING</u><br>Group H10D84/83135 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		285
H10D84/83138	11	{the IGFETs characterised by having different shapes or dimensions of their gate conductors}<br><br><u>WARNING</u><br>Group H10D84/83138 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		332
H10D84/8314	11	{the IGFETs characterised by having gate insulating layers with different properties}<br><br><u>WARNING</u><br>Group H10D84/8314 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		321
H10D84/8316	11	{the IGFETs characterised by having gate sidewall spacers specially adapted for integration}<br><br><u>WARNING</u><br>Group H10D84/8316 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/85, H10D84/853 and H10D84/856. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		138
H10D84/832	11	{comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}<br><br><u>WARNING</u><br>Groups H10D84/832 and H10D84/833 are incomplete pending reclassification of documents from groups H10D84/83 and H10D84/834.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		577
H10D84/833	12	{comprising forksheet IGFETs}	H10D84/83	H10D84/83		74
H10D84/834	11	{comprising FinFETs}<br><br><u>WARNING</u><br>Group H10D84/834 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83125, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316, H10D84/832 - H10D84/833, H10D84/835, H10D84/836 and H10D84/837 - H10D84/839.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		5259
H10D84/835	11	{comprising LDMOS}<br><br><u>WARNING</u><br>Group H10D84/835 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		96
H10D84/836	11	{comprising EDMOS}<br><br><u>WARNING</u><br>Group H10D84/836 is incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		51
H10D84/837	11	{comprising vertical IGFETs}<br><br><u>WARNING</u><br>Groups H10D84/837 and H10D84/839 are incomplete pending reclassification of documents from groups H10D84/83, H10D84/834, H10D84/84, H10D84/853 and H10D84/856.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/83	H10D84/83		239
H10D84/839	12	{comprising VDMOS}	H10D84/83	H10D84/83		165
H10D84/84	11	Combinations of enhancement-mode IGFETs and depletion-mode IGFETs<br><br><u>WARNING</u><br>Group H10D84/84 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83125, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316, H10D84/835, H10D84/836 and H10D84/837 - H10D84/839.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/84	H10D84/84		566
H10D84/85	11	Complementary IGFETs, e.g. CMOS<br><br><u>WARNING</u><br>Group H10D84/85 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316 and H10D84/851 - H10D84/852.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/85	H10D84/85		7530
H10D84/851	12	{comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}<br><br><u>WARNING</u><br>Groups H10D84/851 and H10D84/852 are incomplete pending reclassification of documents from groups H10D84/85 and H10D84/853.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/85	H10D84/85		457
H10D84/852	13	{comprising forksheet IGFETs}	H10D84/85	H10D84/85		59
H10D84/853	12	{comprising FinFETs}<br><br><u>WARNING</u><br>Group H10D84/853 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316, H10D84/835, H10D84/836, H10D84/837 - H10D84/839 and H10D84/851 - H10D84/852.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/85	H10D84/85		4517
H10D84/854	12	{comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention}	H10D84/85	H10D84/85		1024
H10D84/856	12	{the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS}<br><br><u>WARNING</u><br>Group H10D84/856 is impacted by reclassification into groups H10D84/8311, H10D84/8312, H10D84/83135, H10D84/83138, H10D84/8314, H10D84/8316, H10D84/835, H10D84/836 and H10D84/837 - H10D84/839.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D84/85	H10D84/85		2592
H10D84/857	12	{comprising an N-type well but not a P-type well}	H10D84/85	H10D84/85		163
H10D84/858	12	{comprising a P-type well but not an N-type well}	H10D84/85	H10D84/85		312
H10D84/859	12	{comprising both N-type and P-type wells, e.g. twin-tub}	H10D84/85	H10D84/85		1316
H10D84/86	9	of Schottky-barrier gate FETs	H10D84/86	H10D84/86		281
H10D84/87	9	of PN-junction gate FETs	H10D84/87	H10D84/87		337
H10D84/891	8	{characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID}	H10D84/00	H10D84/891		260
H10D84/895	9	{comprising bucket-brigade charge-coupled devices}	H10D84/00	H10D84/895		80
H10D84/90	8	Masterslice integrated circuits	H10D84/90	H10D84/90		828
H10D84/901	9	{comprising bipolar technology}	H10D84/90	H10D84/90		152
H10D84/903	9	{comprising field effect technology}	H10D84/90	H10D84/90		451
H10D84/905	10	{A3B5 or A3B6 gate arrays}	H10D84/90	H10D84/90		2
H10D84/907	10	{CMOS gate arrays}	H10D84/90	H10D84/90		1856
H10D84/909	11	{Microarchitecture}	H10D84/90	H10D84/90		3
H10D84/911	12	{Basic cell P to N transistor counts}	H10D84/90	H10D84/911		4
H10D84/912	13	{4-T CMOS basic cells}	H10D84/90	H10D84/912		26
H10D84/914	13	{5-T CMOS basic cells}	H10D84/90	H10D84/914		6
H10D84/916	13	{6-T CMOS basic cells}	H10D84/90	H10D84/916		16
H10D84/918	13	{7-T CMOS basic cells}	H10D84/90	H10D84/918		1
H10D84/921	13	{8-T CMOS basic cells}	H10D84/90	H10D84/921		6
H10D84/922	12	{relative P to N transistor sizes}	H10D84/90	H10D84/922		6
H10D84/924	13	{for current drive capability}	H10D84/90	H10D84/924		10
H10D84/925	13	{for delay time adaptation}	H10D84/90	H10D84/925		8
H10D84/927	13	{for capacitive loading}	H10D84/90	H10D84/927		4
H10D84/929	12	{Isolations}	H10D84/90	H10D84/929		25
H10D84/931	13	{FET isolation}	H10D84/90	H10D84/931		47
H10D84/933	13	{LOCOS}	H10D84/90	H10D84/933		
H10D84/935	12	{Degree of specialisation for implementing specific functions}	H10D84/90	H10D84/935		6
H10D84/937	13	{Implementation of digital circuits}	H10D84/90	H10D84/937		15
H10D84/938	14	{Implementation of memory functions}	H10D84/90	H10D84/938		44
H10D84/941	13	{Implementation of analog circuits}	H10D84/90	H10D84/941		2
H10D84/942	14	{Resistors and capacitors}	H10D84/90	H10D84/942		6
H10D84/944	13	{Hybrid analog or digital}	H10D84/90	H10D84/944		1
H10D84/946	13	{Embedded IO cells}	H10D84/90	H10D84/946		
H10D84/948	13	{Transmission gates}	H10D84/90	H10D84/948		6
H10D84/949	13	{Porous cells, i.e. pass-through elements}	H10D84/90	H10D84/949		
H10D84/951	12	{Technology used, i.e. design rules}	H10D84/90	H10D84/951		12
H10D84/953	13	{Sub-micron technology}	H10D84/90	H10D84/953		46
H10D84/955	13	{Twin-tub technology}	H10D84/90	H10D84/955		6
H10D84/957	13	{SOS or SOI technology}	H10D84/90	H10D84/957		10
H10D84/959	12	{Connectability characteristics, i.e. diffusion and polysilicon geometries}	H10D84/90	H10D84/959		22
H10D84/961	13	{Substrate and well contacts}	H10D84/90	H10D84/961		44
H10D84/962	13	{Horizontal or vertical grid line density}	H10D84/90	H10D84/962		18
H10D84/964	13	{Yield or reliability}	H10D84/90	H10D84/964		18
H10D84/966	13	{Gate electrode terminals or contacts}	H10D84/90	H10D84/966		78
H10D84/968	11	{Macro-architecture}	H10D84/90	H10D84/968		3
H10D84/971	12	{Number of core or basic cells in the macro (RAM or ROM)}	H10D84/90	H10D84/971		4
H10D84/972	12	{Distribution functions, e.g. sea of gates}	H10D84/90	H10D84/972		4
H10D84/974	12	{Layout specifications, i.e. inner core regions}	H10D84/90	H10D84/974		84
H10D84/975	13	{Wiring regions or routing}	H10D84/90	H10D84/975		280
H10D84/977	13	{Avoiding clock-skew or clock-delays}	H10D84/90	H10D84/977		5
H10D84/979	13	{Data lines, e.g. buses}	H10D84/90	H10D84/979		120
H10D84/981	13	{Power supply lines}	H10D84/90	H10D84/981		302
H10D84/983	11	{Levels of metallisation}	H10D84/90	H10D84/983		11
H10D84/985	12	{Two levels of metal}	H10D84/90	H10D84/985		33
H10D84/987	12	{Three levels of metal}	H10D84/90	H10D84/987		31
H10D84/988	12	{Four or more levels of metal}	H10D84/90	H10D84/988		23
H10D84/991	11	{Latch-up prevention}	H10D84/90	H10D84/991		29
H10D84/992	11	{Noise prevention, e.g. preventing crosstalk}	H10D84/90	H10D84/992		19
H10D84/994	11	{Radiation hardened circuits}	H10D84/90	H10D84/994		2
H10D84/996	9	{using combined field effect technology and bipolar technology}	H10D84/90	H10D84/996		101
H10D84/998	9	{Input and output buffer/driver structures}	H10D84/90	H10D84/998		532
H10D86/00	7	Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates<br><br><u>NOTE</u><br><br>In this group, when the manufacture or treatment of a device is determined to be novel and non-obvious, the device itself is also classified.	H10D86/00	H10D86/00		4249
H10D86/01	8	Manufacture or treatment<br><br><u>WARNING</u><br>Groups H10D86/01 - H10D86/03 are incomplete pending reclassification of documents from group H10D84/01. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D86/01	H10D86/01		4657
H10D86/011	9	{comprising FinFETs}	H10D86/01	H10D86/01		1624
H10D86/021	9	{of multiple TFTs}	H10D86/01	H10D86/021		5192
H10D86/0212	10	{comprising manufacture, treatment or coating of substrates}	H10D86/01	H10D86/0212		1766
H10D86/0214	10	{using temporary substrates}	H10D86/01	H10D86/0214		1220
H10D86/0221	10	{comprising manufacture, treatment or patterning of TFT semiconductor bodies}	H10D86/01	H10D86/0221		2368
H10D86/0223	11	{comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}	H10D86/01	H10D86/0223		622
H10D86/0225	12	{using crystallisation-promoting species, e.g. using a Ni catalyst}	H10D86/01	H10D86/0225		531
H10D86/0227	12	{using structural arrangements to control crystal growth, e.g. placement of grain filters}	H10D86/01	H10D86/0227		324
H10D86/0229	12	{characterised by control of the annealing or irradiation parameters}	H10D86/01	H10D86/0229		1001
H10D86/0231	10	{using masks, e.g. half-tone masks}	H10D86/01	H10D86/0231		4646
H10D86/0241	10	{using liquid deposition, e.g. printing}	H10D86/01	H10D86/0241		641
H10D86/0251	10	{characterised by increasing the uniformity of device parameters}	H10D86/01	H10D86/0251		547
H10D86/03	9	wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]	H10D86/03	H10D86/03		375
H10D86/201	8	{the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}	H10D86/00	H10D86/201		5560
H10D86/215	9	{comprising FinFETs}	H10D86/00	H10D86/215		1533
H10D86/40	8	characterised by multiple TFTs	H10D86/40	H10D86/40		7967
H10D86/411	9	{characterised by materials, geometry or structure of the substrates}	H10D86/40	H10D86/411		3295
H10D86/421	9	{having a particular composition, shape or crystalline structure of the active layer}	H10D86/40	H10D86/421		2486
H10D86/423	10	{comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}	H10D86/40	H10D86/423		6059
H10D86/425	10	{having different crystal properties in different TFTs or within an individual TFT}	H10D86/40	H10D86/425		470
H10D86/427	10	{having different thicknesses of the semiconductor bodies in different TFTs}	H10D86/40	H10D86/427		146
H10D86/431	9	{having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}	H10D86/40	H10D86/431		710
H10D86/441	9	{Interconnections, e.g. scanning lines}	H10D86/40	H10D86/441		15352
H10D86/443	10	{adapted for preventing breakage, peeling or short circuiting}	H10D86/40	H10D86/443		2153
H10D86/451	9	{characterised by the compositions or shapes of the interlayer dielectrics}	H10D86/40	H10D86/451		4872
H10D86/471	9	{having different architectures, e.g. having both top-gate and bottom-gate TFTs}	H10D86/40	H10D86/471		1404
H10D86/481	9	{integrated with passive devices, e.g. auxiliary capacitors}	H10D86/40	H10D86/481		4407
H10D86/60	9	wherein the TFTs are in active matrices	H10D86/60	H10D86/60		27237
H10D86/80	8	characterised by multiple passive components, e.g. resistors, capacitors or inductors	H10D86/80	H10D86/80		515
H10D86/85	9	characterised by only passive components<br><br><u>WARNING</u><br>Group H10D86/85 is impacted by reclassification into groups H10D84/201, H10D84/206, H10D84/209 and H10D84/212.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D86/85	H10D86/85		1091
H10D87/00	7	Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate<br><br><u>WARNING</u><br>Group H10D87/00 is incomplete pending reclassification of documents from group H10D84/01. <br>Groups H10D84/01 and H10D87/00 should be considered in order to perform a complete search.	H10D87/00	H10D87/00		1200
H10D88/00	7	Three-dimensional [3D] integrated devices	H10D88/00	H10D88/00		5696
H10D88/01	8	{Manufacture or treatment}<br><br><u>WARNING</u><br>Group H10D88/01 is incomplete pending reclassification of documents from groups H10D84/01, H10D84/02, H10D84/032, H10D84/035, H10D84/05, H10D84/07 and H10D84/08. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D88/00	H10D88/01		2599
H10D88/101	8	{comprising components on opposite major surfaces of semiconductor substrates}<br><br><u>WARNING</u><br>Group H10D88/101 is incomplete pending reclassification of documents from group H10D84/01. <br>Groups H10D84/01 and H10D88/101 should be considered in order to perform a complete search.	H10D88/00	H10D88/101		324
H10D89/00	7	Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00	H10D89/00	H10D89/00		1791
H10D89/10	8	Integrated device layouts	H10D89/10	H10D89/10		8465
H10D89/105	9	{adapted for thermal considerations}	H10D89/10	H10D89/10		323
H10D89/211	8	{Design considerations for internal polarisation (integrated injection logic H10D84/65)}	H10D89/00	H10D89/211		221
H10D89/213	9	{in field-effect devices}	H10D89/00	H10D89/213		325
H10D89/215	10	{comprising arrangements for charge pumping or biasing substrates}	H10D89/00	H10D89/215		238
H10D89/217	10	{comprising arrangements for charge injection in static induction transistor logic [SITL] devices}	H10D89/00	H10D89/217		139
H10D89/311	9	{in bipolar devices}	H10D89/00	H10D89/311		117
H10D89/60	8	Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]<br><br><u>WARNING</u><br>Groups H10D89/60 - H10D89/931 are incomplete pending reclassification of documents from group H10D84/01. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10D89/60	H10D89/60		2738
H10D89/601	9	{for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs}	H10D89/60	H10D89/60		2147
H10D89/611	10	{using diodes as protective elements}	H10D89/60	H10D89/611		3135
H10D89/711	10	{using bipolar transistors as protective elements}	H10D89/60	H10D89/711		1164
H10D89/713	11	{including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices}	H10D89/60	H10D89/713		1673
H10D89/811	10	{using FETs as protective elements}	H10D89/60	H10D89/811		2959
H10D89/813	11	{specially adapted to provide an electrical current path other than the field-effect induced current path}	H10D89/60	H10D89/813		303
H10D89/814	12	{involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the FET, e.g. gate coupled transistors}	H10D89/60	H10D89/814		198
H10D89/815	12	{involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base region of said parasitic bipolar transistor}	H10D89/60	H10D89/815		200
H10D89/817	11	{FETs in a Darlington configuration}	H10D89/60	H10D89/817		40
H10D89/819	11	{Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits (FETs in a Darlington configuration H10D89/817)}	H10D89/60	H10D89/819		537
H10D89/911	10	{using passive elements as protective elements}	H10D89/60	H10D89/911		1342
H10D89/921	10	{characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses}	H10D89/60	H10D89/921		961
H10D89/931	10	{characterised by the dispositions of the protective arrangements}	H10D89/60	H10D89/931		1138
H10D99/00	7	Subject matter not provided for in other groups of this subclass	H10D99/00	H10D99/00		13485
