C30B   1/00  \	0	0	4G077	C30B   1/00	25	固相からの直接単結晶成長（共析晶物質の一方向析出Ｃ３０Ｂ３／００；保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]
C30B   1/02  \	1	1	4G077	C30B   1/02	385	熱処理によるもの，例．歪焼鈍（Ｃ３０Ｂ１／１２が優先）［３］	by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) [3]
C30B   1/04  \	2	2	4G077	C30B   1/04	98	等温再結晶化［３］	Isothermal recrystallisation [3]
C30B   1/06  \	2	2	4G077	C30B   1/06	48	温度勾配下での再結晶化［３］	Recrystallisation under a temperature gradient [3]
C30B   1/08  \	3	3	4G077	C30B   1/08	122	ゾーン再結晶化［３］	Zone recrystallisation [3]
C30B   1/10  \	1	1	4G077	C30B   1/10	108	固相反応または多相拡散によるもの［３］	by solid state reactions or multi-phase diffusion [3]
C30B   1/12  \	1	1	4G077	C30B   1/12	51	成長中の圧力処理によるもの［３］	by pressure treatment during the growth [3]
C30B   3/00  \	0	0	4G077	C30B   3/00	6	共析晶物質の一方向析出［３］	Unidirectional demixing of eutectoid materials [3]
C30B   5/00  \	0	0	4G077	C30B   5/00	26	ゲルからの単結晶成長（保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal growth from gels (under a protective fluid C30B 27/00) [3]
C30B   5/02  \	1	1	4G077	C30B   5/02	3	ドープ物質を加えるもの［３］	with addition of doping materials [3]
C30B   7/00  \	0	0	4G077	C30B   7/00	156	常温で液体の溶媒を用いる溶液からの単結晶成長，例．水溶液（溶融溶媒からのものＣ３０Ｂ９／００；ノーマル・フリージングまたは温度勾配凝固によるものＣ３０Ｂ１１／００；保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]
C30B   7/02  \	1	1	4G077	C30B   7/02	49	溶媒の蒸発によるもの［３］	by evaporation of the solvent [3]
C30B   7/04  \	2	2	4G077	C30B   7/04	38	水性溶媒を用いるもの［３］	using aqueous solvents [3]
C30B   7/06  \	2	2	4G077	C30B   7/06	38	非水性溶媒を用いるもの［３］	using non-aqueous solvents [3]
C30B   7/08  \	1	1	4G077	C30B   7/08	123	溶液の冷却によるもの［３］	by cooling of the solution [3]
C30B   7/10  \	1	1	4G077	C30B   7/10	605	圧力を加えるもの，例．水熱法［３］	by application of pressure, e.g. hydrothermal processes [3]
C30B   7/12  \	1	1	4G077	C30B   7/12	22	電解によるもの［３］	by electrolysis [3]
C30B   7/14  \	1	1	4G077	C30B   7/14	112	結晶化物質が溶液中の化学反応により形成されるもの［３］	the crystallising materials being formed by chemical reactions in the solution [3]
C30B   9/00  \	0	0	4G077	C30B   9/00	226	溶融溶媒を用いる融液からの単結晶成長（ノーマル・フリージングまたは温度勾配凝固によるものはＣ３０Ｂ１１／００；ゾーンメルティングによるものＣ３０Ｂ１３／００；結晶引出しによるものＣ３０Ｂ１５／００；浸漬された種結晶上に成長するものＣ３０Ｂ１７／００；液相エピタキシャル成長によるものＣ３０Ｂ１９／００；保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]
C30B   9/02  \	1	1	4G077	C30B   9/02	45	溶融溶媒の蒸発によるもの［３］	by evaporation of the molten solvent [3]
C30B   9/04  \	1	1	4G077	C30B   9/04	34	溶液の冷却によるもの［３］	by cooling of the solution [3]
C30B   9/06  \	2	2	4G077	C30B   9/06	91	溶媒として結晶組成の一成分を用いるもの［３］	using as solvent a component of the crystal composition [3]
C30B   9/08  \	2	2	4G077	C30B   9/08	18	他の溶媒を用いるもの［３］	using other solvents [3]
C30B   9/10  \	3	3	4G077	C30B   9/10	148	金属溶媒［３］	Metal solvents [3]
C30B   9/12  \	3	3	4G077	C30B   9/12	185	塩溶媒，例．フラックス成長［３］	Salt solvents, e.g. flux growth [3]
C30B   9/14  \	1	1	4G077	C30B   9/14	13	電解によるもの［３］	by electrolysis [3]
C30B  11/00  \	0	0	4G077	C30B  11/00	302	ノーマル・フリージングまたは温度勾配凝固による単結晶成長，例．ブリッジマン―ストックバーガー法（Ｃ３０Ｂ１３／００，Ｃ３０Ｂ１５／００，Ｃ３０Ｂ１７／００，Ｃ３０Ｂ１９／００が優先；保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]
C30B  11/00  C	0	0	4G077	C30B  11/00	650	るつぼ又は容器	Melting pots or containers
C30B  11/00  Z	0	0	4G077	C30B  11/00	1140	その他	Others
C30B  11/02  \	1	1	4G077	C30B  11/02	128	溶媒を使用しないもの（Ｃ３０Ｂ１１／０６が優先）［３］	without using solvents (C30B 11/06 takes precedence) [3]
C30B  11/04  \	1	1	4G077	C30B  11/04	151	融液中に結晶化物質またはそれをその場所で生成する反応剤を添加するもの［３］	adding crystallising materials or reactants forming it <u>in situ</u> to the melt [3]
C30B  11/06  \	2	2	4G077	C30B  11/06	228	結晶組成の全成分ではなく少なくとも１つの成分を加えるもの［３］	at least one but not all components of the crystal composition being added [3]
C30B  11/08  \	2	2	4G077	C30B  11/08	92	結晶化中に結晶組成の全ての成分を加えるもの［３］	every component of the crystal composition being added during the crystallisation [3]
C30B  11/10  \	3	3	4G077	C30B  11/10	93	固体または液体成分，例．ベルヌーイ法［３］	Solid or liquid components, e.g. Verneuil method [3]
C30B  11/12  \	3	3	4G077	C30B  11/12	72	蒸気成分，例．気相―液相―固相成長（ＶＬＳ）［３］	Vaporous components, e.g. vapour-liquid-solid-growth [3]
C30B  11/14  \	1	1	4G077	C30B  11/14	140	種結晶によって特徴づけられたもの，例．その結晶方位［３］	characterised by the seed, e.g. its crystallographic orientation [3]
C30B  13/00  \	0	0	4G077	C30B  13/00	559	ゾーンメルティングによる単結晶成長；ゾーンメルティングによる精製（Ｃ３０Ｂ１７／００が優先；処理された固体の断面積を変化させるものＣ３０Ｂ１５／００；保護流体下で行なうものＣ３０Ｂ２７／００；特定構造を有する均質多結晶物質の成長のためのものＣ３０Ｂ２８／００）［２００６．０１］	Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [2006.01]
C30B  13/02  \	1	1	4G077	C30B  13/02	85	溶媒を用いるゾーンメルティング，例．移動溶媒法［３］	Zone-melting with a solvent, e.g. travelling solvent process [3]
C30B  13/04  \	1	1	4G077	C30B  13/04	17	ゾーンレベリングによる均質化［３］	Homogenisation by zone-levelling [3]
C30B  13/06  \	1	1	4G077	C30B  13/06	116	溶融ゾーンが全断面にわたって広がらないもの［３］	the molten zone not extending over the whole cross-section [3]
C30B  13/08  \	1	1	4G077	C30B  13/08	48	溶融ゾーンに結晶化物質またはそれをその場所で生成する反応剤を添加するもの［３］	adding crystallising materials or reactants forming it <u>in situ</u> to the molten zone [3]
C30B  13/10  \	2	2	4G077	C30B  13/10	54	ドープ物質を加えるもの［３］	with addition of doping materials [3]
C30B  13/12  \	3	3	4G077	C30B  13/12	49	ガスまたは蒸気状態で［３］	in the gaseous or vapour state [3]
C30B  13/14  \	1	1	4G077	C30B  13/14	123	るつぼまたは容器［３］	Crucibles or vessels [3]
C30B  13/16  \	1	1	4G077	C30B  13/16	96	溶融ゾーンの加熱［３］	Heating of the molten zone [3]
C30B  13/18  \	2	2	4G077	C30B  13/18	26	加熱素子が溶融ゾーンに接触または浸漬されるもの［３］	the heating element being in contact with, or immersed in, the molten zone [3]
C30B  13/20  \	2	2	4G077	C30B  13/20	227	誘導によるもの，例．ホットワイヤ技術（Ｃ３０Ｂ１３／１８が優先）［３］	by induction, e.g. hot wire technique (C30B 13/18&nbsp;takes precedence) [3]
C30B  13/22  \	2	2	4G077	C30B  13/22	87	照射または電気放電によるもの［３］	by irradiation or electric discharge [3]
C30B  13/24  \	3	3	4G077	C30B  13/24	271	電磁波を用いるもの［３］	using electromagnetic waves [3]
C30B  13/26  \	1	1	4G077	C30B  13/26	32	溶融ゾーンの攪拌［３］	Stirring of the molten zone [3]
C30B  13/28  \	1	1	4G077	C30B  13/28	188	制御または調整［３］	Controlling or regulating [3]
C30B  13/30  \	2	2	4G077	C30B  13/30	142	溶融ゾーンの安定化または形状の制御，例．コンセントレイターによるもの，電磁界によるもの；結晶断面の制御［３］	Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3]
C30B  13/32  \	1	1	4G077	C30B  13/32	107	材料またはヒーターの移動機構［３］	Mechanisms for moving either the charge or the heater [3]
C30B  13/34  \	1	1	4G077	C30B  13/34	51	種結晶によって特徴づけられたもの，例．その結晶方位［３］	characterised by the seed, e.g. by its crystallographic orientation [3]
C30B  15/00  \	0	0	4G077	C30B  15/00	142	融液からの引出しによる単結晶成長，例．チョクラルスキー法（保護流体下で行うものＣ３０Ｂ２７／００）［３］	Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]
C30B  15/00  P	0	0	4G077	C30B  15/00	73	ペデスタル引上げ法（ペデスタル引上げ法とは固体状の原料の一部を加熱によつて融液化し，その部分に種結晶を浸して，単結晶の引上げを行う単結晶の育成方法である．）	Pedestal pull-up method (Pedestal pull-up method is a single crystal fostering method that melts a part of solid materials and pulls up single crystal by soaking the seed in that area.)
C30B  15/00  Z	0	0	4G077	C30B  15/00	2680	その他	Others
C30B  15/02  \	1	1	4G077	C30B  15/02	654	融液に結晶化物質またはそれをその場所で生成する反応剤を添加するもの［３］	adding crystallising materials or reactants forming it <u>in situ</u> to the melt [3]
C30B  15/04  \	2	2	4G077	C30B  15/04	476	ドープ物質を加えるもの，例．ＰＮ接合用［３］	adding doping materials, e.g. for n&ndash;p-junction [3]
C30B  15/06  \	1	1	4G077	C30B  15/06	77	非垂直引出し［３］	Non-vertical pulling [3]
C30B  15/08  \	1	1	4G077	C30B  15/08	153	下方引出し［３］	Downward pulling [3]
C30B  15/10  \	1	1	4G077	C30B  15/10	1702	融液を支持するためのるつぼまたは容器［３］	Crucibles or containers for supporting the melt [3]
C30B  15/12  \	2	2	4G077	C30B  15/12	264	二重るつぼ法［３］	Double crucible methods [3]
C30B  15/14  \	1	1	4G077	C30B  15/14	937	融液または結晶化した物質の加熱［３］	Heating of the melt or the crystallised materials [3]
C30B  15/16  \	2	2	4G077	C30B  15/16	45	照射または電気放電によるもの［３］	by irradiation or electric discharge [3]
C30B  15/18  \	2	2	4G077	C30B  15/18	30	直接抵抗加熱に加えて他の加熱方法を用いるもの，例．ペルチェ加熱を用いるもの［３］	using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3]
C30B  15/20  \	1	1	4G077	C30B  15/20	1103	制御または調整（制御または調整一般Ｇ０５）［３］	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  15/22  \	2	2	4G077	C30B  15/22	613	引出された結晶近傍の溶融ゾーンの安定化または形状の制御；結晶断面の制御［３］	Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3]
C30B  15/24  \	3	3	4G077	C30B  15/24	108	機械的手段を用いるもの，例．成形ガイド（縁部限定薄膜供給結晶成長［ＥＦＧ］用の成形型Ｃ３０Ｂ１５／３４）［３］	using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [3]
C30B  15/26  \	3	3	4G077	C30B  15/26	390	テレビジョン検出器を用いるもの；光またはＸ線検出器を用いるもの［３］	using television detectors; using photo or X-ray detectors [3]
C30B  15/28  \	3	3	4G077	C30B  15/28	206	結晶または融液の重量変化を用いるもの，例．フローテーション法［３］	using weight changes of the crystal or the melt, e.g. flotation methods [3]
C30B  15/30  \	1	1	4G077	C30B  15/30	368	融液または結晶を回転または移動させるための機構（フローテーション法Ｃ３０Ｂ１５／２８）［３］	Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [3]
C30B  15/32  \	1	1	4G077	C30B  15/32	286	種結晶保持器，例．チャック［３］	Seed holders, e.g. chucks [3]
C30B  15/34  \	1	1	4G077	C30B  15/34	415	型またはスリットを用いる縁部限定薄膜供給結晶成長（ＥＦＧ）［３］	Edge-defined film-fed crystal growth using dies or slits [3]
C30B  15/36  \	1	1	4G077	C30B  15/36	276	種結晶により特徴づけられたもの，例．その結晶方位［３］	characterised by the seed, e.g. its crystallographic orientation [3]
C30B  17/00  \	0	0	4G077	C30B  17/00	120	成長中融液に浸した種結晶上への単結晶成長，例．ナッケン―キロポロス法（Ｃ３０Ｂ１５／００が優先）［３］	Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]
C30B  19/00  \	0	0	4G077	C30B  19/00	57	液相エピタキシャル成長［３］	Liquid-phase epitaxial-layer growth [3]
C30B  19/00  S	0	0	4G077	C30B  19/00	480	スライド法（スライド法とはスライダ−とボ−トとを相対的に滑動させながら，スライダ−に載せられた基板とボ−ドに収容された単結晶原料融液とを接触させることによつて，基板表面に単結晶の層を成長させる単結晶の育成方法である．）	Sliding method (Sliding method refers to fostering method of single crystal that enables growth of single crystal layer on substrate surface by putting the substrate in contact with the single-crystal material melt stored in the board while relatively sliding slider and boat.)
C30B  19/00  Z	0	0	4G077	C30B  19/00	810	その他	Others
C30B  19/02  \	1	1	4G077	C30B  19/02	393	溶融溶媒を用いるもの，例．フラックス［３］	using molten solvents, e.g. flux [3]
C30B  19/04  \	2	2	4G077	C30B  19/04	439	溶媒が結晶組成の一成分であるもの［３］	the solvent being a component of the crystal composition [3]
C30B  19/06  \	1	1	4G077	C30B  19/06	96	反応室；融液支持用ボート；基板保持体［３］	Reaction chambers; Boats for supporting the melt; Substrate holders [3]
C30B  19/06  S	1	0	4G077	C30B  19/06	528	スライド法	Sliding method
C30B  19/06  Z	1	0	4G077	C30B  19/06	517	その他	Others
C30B  19/08  \	1	1	4G077	C30B  19/08	75	反応室または基板の加熱［３］	Heating of the reaction chamber or the substrate [3]
C30B  19/10  \	1	1	4G077	C30B  19/10	206	制御または調整（制御または調整一般Ｇ０５）［３］	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  19/12  \	1	1	4G077	C30B  19/12	471	基板によって特徴づけられたもの［３］	characterised by the substrate [3]
C30B  21/00  \	0	0	4G077	C30B  21/00	18	共晶物質の一方向固化［３］	Unidirectional solidification of eutectic materials [3]
C30B  21/02  \	1	1	4G077	C30B  21/02	79	通常の鋳造または温度勾配凝固によるもの［３］	by normal casting or gradient freezing [3]
C30B  21/04  \	1	1	4G077	C30B  21/04	21	ゾーンメルティングによるもの［３］	by zone-melting [3]
C30B  21/06  \	1	1	4G077	C30B  21/06	16	融液からの引出しによるもの［３］	by pulling from a melt [3]
C30B  23/00  \	0	0	4G077	C30B  23/00	427	蒸発または昇華した物質の凝固による単結晶成長［３］	Single-crystal growth by condensing evaporated or sublimed materials [3]
C30B  23/02  \	1	1	4G077	C30B  23/02	564	エピタキシャル層成長［３］	Epitaxial-layer growth [3]
C30B  23/04  \	2	2	4G077	C30B  23/04	48	パターン成膜，例．マスクを用いるもの［３］	Pattern deposit, e.g. by using masks [3]
C30B  23/06  \	2	2	4G077	C30B  23/06	684	成膜室，基板または被蒸発物質の加熱［３］	Heating of the deposition chamber, the substrate, or the materials to be evaporated [3]
C30B  23/08  \	2	2	4G077	C30B  23/08	149	イオン化蒸気の凝縮によるもの（反応スパッタリングによるものＣ３０Ｂ２５／０６）［３］	by condensing ionised vapours (by reactive sputtering C30B 25/06) [3]
C30B  23/08  M	2	0	4G077	C30B  23/08	1809	分子線によるもの	By molecular beam
C30B  23/08  P	2	0	4G077	C30B  23/08	103	プラズマを利用するもの	Using plasma
C30B  23/08  Z	2	0	4G077	C30B  23/08	502	その他	Others
C30B  25/00  \	0	0	4G077	C30B  25/00	381	反応ガスの化学反応による単結晶成長，例．化学蒸着（ＣＶＤ）による成長［３］	Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3]
C30B  25/02  \	1	1	4G077	C30B  25/02	316	エピタキシャル層成長［３］	Epitaxial-layer growth [3]
C30B  25/02  P	1	0	4G077	C30B  25/02	415	プラズマを利用するもの	Using plasma
C30B  25/02  Z	1	0	4G077	C30B  25/02	1815	その他	Others
C30B  25/04  \	2	2	4G077	C30B  25/04	276	パターン成膜，例．マスクを用いるもの［３］	Pattern deposit, e.g. by using masks [3]
C30B  25/06  \	2	2	4G077	C30B  25/06	158	反応スパッタリングによるもの［３］	by reactive sputtering [3]
C30B  25/08  \	2	2	4G077	C30B  25/08	413	反応室；そのための材料の選択［３］	Reaction chambers; Selection of materials therefor [3]
C30B  25/10  \	2	2	4G077	C30B  25/10	569	反応室または基板の加熱［３］	Heating of the reaction chamber or the substrate [3]
C30B  25/12  \	2	2	4G077	C30B  25/12	955	基板保持体またはサセプタ［３］	Substrate holders or susceptors [3]
C30B  25/14  \	2	2	4G077	C30B  25/14	2190	ガスの供給および排出手段；反応ガス流の調節［３］	Feed and outlet means for the gases; Modifying the flow of the reactive gases [3]
C30B  25/16  \	2	2	4G077	C30B  25/16	685	制御または調整（制御または調整一般Ｇ０５）［３］	Controlling or regulating (controlling or regulating in general G05) [3]
C30B  25/18  \	2	2	4G077	C30B  25/18	1673	基板によって特徴づけられたもの［３］	characterised by the substrate [3]
C30B  25/20  \	3	3	4G077	C30B  25/20	839	基板がエピタキシャル層と同一物質であるもの［３］	the substrate being of the same materials as the epitaxial layer [3]
C30B  25/22  \	2	2	4G077	C30B  25/22	28	サンドイッチプロセス［３］	Sandwich processes [3]
C30B  27/00  \	0	0	4G077	C30B  27/00	173	保護流体下における単結晶成長［３］	Single-crystal growth under a protective fluid [3]
C30B  27/02  \	1	1	4G077	C30B  27/02	1142	融液からの引出しによるもの［３］	by pulling from a melt [3]
C30B  28/00  \	0	0	4G077	C30B  28/00	15	特定構造を有する均質多結晶物質の製造［５］	Production of homogeneous polycrystalline material with defined structure [5]
C30B  28/02  \	1	1	4G077	C30B  28/02	52	固相から直接に［５］	directly from the solid state [5]
C30B  28/04  \	1	1	4G077	C30B  28/04	62	液体から［５］	from liquids [5]
C30B  28/06  \	2	2	4G077	C30B  28/06	70	ノーマル・フリージングまたは温度勾配凝固によるもの［５］	by normal freezing or freezing under temperature gradient [5]
C30B  28/08  \	2	2	4G077	C30B  28/08	15	ゾーンメルティングによるもの［５］	by zone-melting [5]
C30B  28/10  \	2	2	4G077	C30B  28/10	18	融液からの引出しによるもの［５］	by pulling from a melt [5]
C30B  28/12  \	1	1	4G077	C30B  28/12	140	気相から直接に［５］	directly from the gas state [5]
C30B  28/14  \	2	2	4G077	C30B  28/14	75	反応ガスの化学反応によるもの［５］	by chemical reaction of reactive gases [5]
C30B  29/00  \	0	0	4G077	C30B  29/00	16	材料または形状によって特徴づけられた単結晶または特定構造を有する均質多結晶物質［３，５］	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B  29/02  \	1	1	4G077	C30B  29/02	259	元素［３］	Elements [3]
C30B  29/04  \	2	2	4G077	C30B  29/04	252	ダイヤモンド［３］	Diamond [3]
C30B  29/04  A	2	0	4G077	C30B  29/04	167	気相法によるダイヤモンド薄膜の製造〔粒子の被覆→Ｔ〕	Making diamond film by gas state method (particle coating R T)
C30B  29/04  B	2	1	4G077	C30B  29/04	257	プラズマを生成させるもの〔Ｃ〜Ｆ以外のものまたはプラズマ生成手段を特定していないもの〕	Generating plasma (other than C to F, or with no specified means of generation)
C30B  29/04  C	2	2	4G077	C30B  29/04	207	直流放電プラズマによるもの	By DC discharge plasma
C30B  29/04  D	2	2	4G077	C30B  29/04	103	高周波プラズマによるもの	By high frequency plasma
C30B  29/04  E	2	2	4G077	C30B  29/04	486	マイクロ波プラズマによるもの（Ｈ１３．５新設）	By microwave plasma
C30B  29/04  F	2	2	4G077	C30B  29/04	46	サイクロトロン共鳴プラズマによるもの	By cyclotron resonance plasma
C30B  29/04  G	2	1	4G077	C30B  29/04	195	加熱体〔例．熱フイラメント，加熱基板〕により原料ガスを活性化するもの〔雰囲気加熱を含む〕	Activating material gas by heating body, e.g. heat filament, heating substrate (including atmospheric heating)
C30B  29/04  H	2	1	4G077	C30B  29/04	80	燃焼炎により原料ガスを活性化するもの	Activating material gas by combustion flame
C30B  29/04  J	2	1	4G077	C30B  29/04	60	熱電子照射により原料ガスを活性化するもの	Activating material gas by thermal electronic irradiation
C30B  29/04  K	2	1	4G077	C30B  29/04	73	光照射により原料ガスを活性化するもの	Activating material gas by light irradiation
C30B  29/04  L	2	1	4G077	C30B  29/04	32	イオンビ−ム照射により原料ガスを活性化するもの	Activating material gas by ion beam irradiation
C30B  29/04  M	2	1	4G077	C30B  29/04	56	真空蒸着，スパツタリングによるもの	By vacuum evaporation, sputtering
C30B  29/04  N	2	1	4G077	C30B  29/04	64	Ｂ〜Ｍのような成膜手段を特定していないもの	With no specified diaphragm forming means as in B to M
C30B  29/04  P	2	2	4G077	C30B  29/04	161	基板材料に特徴あるもの	Characterized by substrate materials
C30B  29/04  Q	2	2	4G077	C30B  29/04	481	基板の処理に特徴あるもの〔例．表面処理，中間層の形成〕	Characterized by treatment of substrate, e.g. surface treatment, formation of intermediate layer)
C30B  29/04  R	2	2	4G077	C30B  29/04	193	原料ガスの組成に特徴あるもの	Characterized by composition of material gas
C30B  29/04  S	2	0	4G077	C30B  29/04	126	気相法による薄膜以外の形状〔例．粒状〕のダイヤモンドの製造	Manufacture of diamond in shapes, e.g. particles, other than film using gas state method
C30B  29/04  T	2	0	4G077	C30B  29/04	39	気相法によるダイヤモンドで他の材料の粒子を被覆するもの	Coating other material particles for diamonds using gas state method
C30B  29/04  U	2	0	4G077	C30B  29/04	137	気相法によらないダイヤモンドの製造	Manufacture of diamond not using gas state method
C30B  29/04  V	2	0	4G077	C30B  29/04	370	ダイヤモンド結晶の処理	Treatment of diamond crystals
C30B  29/04  W	2	0	4G077	C30B  29/04	328	ダイヤモンドからなる又はダイヤモンドを含む物品	Articles comprised of or containing diamonds
C30B  29/04  X	2	1	4G077	C30B  29/04	365	基材表面に気相法ダイアモンド被覆を施した物品	Articles with gas state method diamond coating on substrate surface
C30B  29/04  Z	2	0	4G077	C30B  29/04	72	その他	Others
C30B  29/06  \	2	2	4G077	C30B  29/06	734	シリコン［３］	Silicon [3]
C30B  29/06  A	2	0	4G077	C30B  29/06	559	結晶自体に特徴あるもの〔例．不純物濃度，物性，結晶方位の特定〕	Characterized by crystal per se, e.g. concentration of impurities, physical properties, determination of crystal direction
C30B  29/06  B	2	0	4G077	C30B  29/06	591	結晶の後処理	After-treatment of crystals
C30B  29/06  C	2	0	4G077	C30B  29/06	163	Ｓｉの結晶を使用した物品	Articles using Si crystals
C30B  29/06  D	2	0	4G077	C30B  29/06	290	結晶成長用のＳｉ材料の製造〔例．高純度多結晶シリコン棒の製造〕	Manufacture of Si materials for crystal growth, e.g. manufacture of high-purity polycrystalline silicon rod
C30B  29/06  Z	2	0	4G077	C30B  29/06	171	その他	Others
C30B  29/06 501 \	3	3	4G077	C30B  29/06	5	液相からの成長	Growth from liquid phase
C30B  29/06 501 A	3	0	4G077	C30B  29/06	219	ゾ−ンメルテイングによる成長	Growth by zone melting
C30B  29/06 501 B	3	0	4G077	C30B  29/06	100	液相エピタキシヤル成長	Liquid phase epitaxitial growth
C30B  29/06 501 Z	3	0	4G077	C30B  29/06	312	その他	Others
C30B  29/06 502 \	4	4	4G077	C30B  29/06	33	引上げ法によるもの	By pull-up method
C30B  29/06 502 A	4	0	4G077	C30B  29/06	351	原料粉末の供給，融液の形成	Supply of material powder, formation of a melt
C30B  29/06 502 B	4	0	4G077	C30B  29/06	1005	るつぼ〔るつぼに一体化又は密着して使用される治具を含む〕	Melting pots (including jigs used by being part of, or being sticking together with melting pot)
C30B  29/06 502 C	4	0	4G077	C30B  29/06	513	引上げ炉内で使用される治具〔例，熱遮蔽板，保温筒等〕に特徴あるもの〔Ｅが優先〕	Jigs used inside pull-up furnaces, e.g. heat shield plates, heat-retention tubes etc. (E takes precedence)
C30B  29/06 502 D	4	1	4G077	C30B  29/06	36	融液内に配置されるもの〔Ｅが優先〕	Placed inside a melt (E takes precedence)
C30B  29/06 502 E	4	0	4G077	C30B  29/06	390	加熱，冷却手段に特徴あるもの	Characterized by heating, cooling means
C30B  29/06 502 F	4	0	4G077	C30B  29/06	280	種結晶及び種結晶の保持，引上げ装置に特徴あるもの	Characterized by the seed and see crystal retention, pull-up devices
C30B  29/06 502 G	4	0	4G077	C30B  29/06	400	磁場を使用するもの	Using magnetic field
C30B  29/06 502 H	4	0	4G077	C30B  29/06	795	不純物，不可避不純物量の制御	Controlling the volume of impurities, inevitable impurities
C30B  29/06 502 J	4	0	4G077	C30B  29/06	484	引上げ速度，回転数の制御〔Ｈが優先〕	Control of pull-up speed, rotating speed (H takes precedence)
C30B  29/06 502 K	4	0	4G077	C30B  29/06	248	引上炉内の雰囲気の調整〔雰囲気ガスの供給，排出，圧力調整〕	Adjustment of atmosphere inside pull-up furnace (supply, discharge, pressure adjustment of atmospheric gas)
C30B  29/06 502 Z	4	0	4G077	C30B  29/06	489	その他	Others
C30B  29/06 503 \	3	3	4G077	C30B  29/06	180	融液からの板状，帯状シリコンの引き出し	Pulling up plate, strip silicon from a melt
C30B  29/06 504 \	3	3	4G077	C30B  29/06	4	気相からの成長	Growth from gas state
C30B  29/06 504 A	3	0	4G077	C30B  29/06	99	基材上への薄膜の成長	Growth to film on substrate
C30B  29/06 504 B	3	1	4G077	C30B  29/06	58	原料ガスの選択，組成に特徴あるもの	Characterized by selection of material gas, composition
C30B  29/06 504 C	3	1	4G077	C30B  29/06	94	原料ガスの供給・排出，流れの制御に特徴あるもの	Characterized by supply/discharge, flow of material gas,
C30B  29/06 504 D	3	1	4G077	C30B  29/06	43	基板の加熱，冷却の手段，方法に特徴あるもの	Characterized by heating, cooling means, methods of substrate
C30B  29/06 504 E	3	1	4G077	C30B  29/06	70	基板材料の選択に特徴あるもの〔Ｆが優先〕	Characterized by selection of substrate materials (F takes precedence)
C30B  29/06 504 F	3	1	4G077	C30B  29/06	150	基板の処理〔Ｊが優先〕；基板上にＳｉ以上の膜を形成させてのちＳｉ膜を成長させるもの〔例．バツフア−膜の形成〕	Treatment of substrates (J takes precedence); Forming film of Si and above on substrate that later grows into Si film, e.g. formation of buffer film
C30B  29/06 504 G	3	1	4G077	C30B  29/06	41	Ｓｉ膜を二工程以上に分けて成長させるもの	Growing Si film in two or more processes
C30B  29/06 504 H	3	1	4G077	C30B  29/06	27	Ｓｉ膜を基板上の時定領域に成長させるもの〔Ｊが優先〕	Growing Si film on time constant area of substrate (J takes precedence)
C30B  29/06 504 J	3	1	4G077	C30B  29/06	36	基板上の種子結晶上に成長させるもの	Growing on seed crystal of substrate
C30B  29/06 504 K	3	1	4G077	C30B  29/06	78	基板上に形成したＳｉ膜に処理を施すもの〔例．非結晶質Ｓｉ膜の単結晶化，ド−ピング〕	Applying treatment on Si film formed on substrate, e.g. single crystallisation of  noncrystalline Si film, doping
C30B  29/06 504 L	3	1	4G077	C30B  29/06	97	気相成長用の装置，治具類に特徴あるもの〔例．基板支持台，ベルジヤ−，Ｃ〜Ｋが優先〕	Characterized by devices, jigs for gas state growth, e.g. substrate support, bell jar, C to K Take precedence
C30B  29/06 504 Z	3	0	4G077	C30B  29/06	70	その他	Others
C30B  29/08  \	2	2	4G077	C30B  29/08	122	ゲルマニウム［３］	Germanium [3]
C30B  29/10  \	1	1	4G077	C30B  29/10	275	無機化合物または組成物［３］	Inorganic compounds or compositions [3]
C30B  29/12  \	2	2	4G077	C30B  29/12	597	ハロゲン化物［３］	Halides [3]
C30B  29/14  \	2	2	4G077	C30B  29/14	146	りん酸塩［３］	Phosphates [3]
C30B  29/16  \	2	2	4G077	C30B  29/16	1335	酸化物［３］	Oxides [3]
C30B  29/18  \	3	3	4G077	C30B  29/18	323	石英［３］	Quartz [3]
C30B  29/20  \	3	3	4G077	C30B  29/20	774	酸化アルミニウム［３］	Aluminium oxides [3]
C30B  29/22  \	3	3	4G077	C30B  29/22	95	複合酸化物［３］	Complex oxides [3]
C30B  29/22  A	3	0	4G077	C30B  29/22	173	Ａｌを含有するもの〔Ａ〜Ｆはラストプレ−スル−ルを適用〕	Containing Al (Apply right place rule for A to F)
C30B  29/22  B	3	1	4G077	C30B  29/22	39	ＢｅＡｌ↓２Ｏ↓４〔クリソベリル，アレキサンドライト〕	BeAl2O4 (chrysoberyl, alexandrite)
C30B  29/22  C	3	0	4G077	C30B  29/22	193	Ｂを含有するもの	Containing
C30B  29/22  D	3	0	4G077	C30B  29/22	95	Ｂｉを含有するもの	Containing
C30B  29/22  F	3	0	4G077	C30B  29/22	284	フエライト	Ferrite
C30B  29/22  G	3	1	4G077	C30B  29/22	110	ＭｎとＺｎとを含むもの	Containing Mn and Zn
C30B  29/22  Z	3	0	4G077	C30B  29/22	1272	その他	Others
C30B  29/22 501 \	4	4	4G077	C30B  29/22	8	超電導材料	Superconducting materials
C30B  29/22 501 A	4	0	4G077	C30B  29/22	101	固相からの成長	Growth from solid state
C30B  29/22 501 B	4	0	4G077	C30B  29/22	214	液相からの成長	Growth from liquid state
C30B  29/22 501 C	4	1	4G077	C30B  29/22	88	基板上に超電導層を形成したもの	Forming superconducting layer on substrate
C30B  29/22 501 D	4	0	4G077	C30B  29/22	25	気相法による成長	Growth by gas state method
C30B  29/22 501 E	4	1	4G077	C30B  29/22	224	基板上に超電導層を形成したもの	Forming superconducting layer on substrate
C30B  29/22 501 H	4	2	4G077	C30B  29/22	180	スパツタリングによるもの〔Ｊ〜Ｎが優先〕	By sputtering (J to N take precedence)
C30B  29/22 501 J	4	2	4G077	C30B  29/22	136	基板の選択に特徴あるもの	Characterized by selection of substrate
C30B  29/22 501 K	4	2	4G077	C30B  29/22	205	基板の処理，基板と超電導層との間に中間層を形成したもの	Treatment of substrates, forming intermediate layer between substrate and superconducting layer
C30B  29/22 501 L	4	2	4G077	C30B  29/22	65	製膜後に超電導層に処理を施すもの〔例．熱処理，イオン注入処理等〕	Applying treatment on superconducting layer after making of film, e.g. heat treatment, ion injection treatment etc.
C30B  29/22 501 M	4	2	4G077	C30B  29/22	80	超電導層を複層に形成するもの又は超電導層の表面に更に他の材料の層を形成するもの	Forming superconducting layer on multiple layers or forming layer of other materials on the surface of superconducting layer
C30B  29/22 501 N	4	0	4G077	C30B  29/22	113	超電導材料を利用した物品の用途に特徴のあるもの〔例．半導体装置，半導体基板，線材〕	Characterized by the purpose of articles using superconducting materials, e.g. semiconductor devices, semiconductor substrates, wires
C30B  29/22 501 P	4	0	4G077	C30B  29/22	33	超電導結晶の後処理に特徴あるもの〔Ｌが優先〕	Characterized by after-treatment of superconducting crystals (L takes precedence)
C30B  29/22 501 Z	4	0	4G077	C30B  29/22	53	その他	Others
C30B  29/24  \	4	4	4G077	C30B  29/24	141	式ＡＭｅＯ↓３を有するもの，ここでＡは希土類金属またはＭｅはＦｅ，Ｇａ，Ｓｃ，Ｃｒ，ＣｏまたはＡｌ，例．オルソフェライト［３］	with formula AMeO<sub>3</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3]
C30B  29/26  \	4	4	4G077	C30B  29/26	89	式ＢＭｅ↓２Ｏ↓４を有するもの，ここでＢはＭｇ，Ｎｉ，Ｃｏ，Ａｌ，ＺｎまたはＣｄまたＭｅはＦｅ，Ｇａ，Ｓｃ，Ｃｒ，ＣｏまたはＡｌ［３］	with formula BMe<sub>2</sub>O<sub>4</sub>, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3]
C30B  29/28  \	4	4	4G077	C30B  29/28	1130	式Ａ↓３Ｍｅ↓５Ｏ↓１↓２を有するもの，ここでＡは希土類金属またＭｅはＦｅ，Ｇａ，Ｓｃ，Ｃｒ，ＣｏまたはＡｌ，例．ガーネット［３］	with formula A<sub>3</sub>Me<sub>5</sub>O<sub>12</sub>, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3]
C30B  29/30  \	4	4	4G077	C30B  29/30	75	ニオブ酸塩；バナジン酸塩；タンタル酸塩［３］	Niobates; Vanadates; Tantalates [3]
C30B  29/30  A	4	0	4G077	C30B  29/30	695	ニオブ酸塩〔Ｃが優先〕	Niobates (C takes precedence)
C30B  29/30  B	4	0	4G077	C30B  29/30	562	タンタル酸塩〔Ｃが優先〕	Tantalates (C takes precedence)
C30B  29/30  C	4	0	4G077	C30B  29/30	105	ニオブとタンタルとを含むもの	Containing niobates and tantalates
C30B  29/30  D	4	0	4G077	C30B  29/30	49	バナジン酸塩	Vanadates
C30B  29/30  Z	4	0	4G077	C30B  29/30	14	その他	Others
C30B  29/32  \	4	4	4G077	C30B  29/32	45	チタン酸塩；ゲルマニウム酸塩；モリブデン酸塩；タングステン酸塩［３］	Titanates; Germanates; Molybdates; Tungstates [3]
C30B  29/32  A	4	0	4G077	C30B  29/32	166	チタン酸塩	Titanates
C30B  29/32  B	4	1	4G077	C30B  29/32	52	アルカリ金属のチタン酸塩	Titanates of alkaline metal
C30B  29/32  C	4	1	4G077	C30B  29/32	177	アルカリ土類金属のチタン酸塩	Titanates of alkaline earth metal
C30B  29/32  D	4	1	4G077	C30B  29/32	138	チタン酸鉛	Lead titanates
C30B  29/32  G	4	0	4G077	C30B  29/32	70	ゲルマニウム酸塩	Germanates
C30B  29/32  M	4	0	4G077	C30B  29/32	47	モリブデン酸塩	Molybdates
C30B  29/32  W	4	0	4G077	C30B  29/32	34	タングステン酸塩	Tungstates
C30B  29/32  Z	4	0	4G077	C30B  29/32	26	その他	Others
C30B  29/34  \	2	2	4G077	C30B  29/34	16	けい酸塩［３］	Silicates [3]
C30B  29/34  A	2	0	4G077	C30B  29/34	60	ベリル〔ＢｅＯ−Ａｌ↓２Ｏ↓３−ＳｉＯ↓２〕	Beryls (BeO-Al2O3-SiO2)
C30B  29/34  Z	2	0	4G077	C30B  29/34	308	その他	Others
C30B  29/36  \	2	2	4G077	C30B  29/36	78	炭化物［３］	Carbides [3]
C30B  29/36  A	2	0	4G077	C30B  29/36	3609	炭化けい素	Carbides
C30B  29/36  Z	2	0	4G077	C30B  29/36	48	その他	Others
C30B  29/38  \	2	2	4G077	C30B  29/38	202	窒化物［３］	Nitrides [3]
C30B  29/38  A	2	0	4G077	C30B  29/38	128	Ｂを含むもの〔例．ＢＮ，ＢＣＮ〕	Containing B, e.g. BN, BCN
C30B  29/38  B	2	0	4G077	C30B  29/38	56	Ｓｉを含むもの〔例．Ｓｉ↓３Ｎ↓４〕	Containing Si, e.g. Si3N4
C30B  29/38  C	2	0	4G077	C30B  29/38	849	Ａｌを含むもの〔例．ＡｌＮ〕	Containing Al, e.g. AIN
C30B  29/38  D	2	0	4G077	C30B  29/38	3888	Ｇａを含むもの〔例．ＧａＮ〕	Containing Ga, e.g. GaN
C30B  29/38  Z	2	0	4G077	C30B  29/38	160	その他	Others
C30B  29/40  \	2	2	4G077	C30B  29/40	1340	ＡＩＩＩＢＶ化合物［３］	A<sub>III</sub>B<sub>V</sub> compounds [3]
C30B  29/40  A	2	0	4G077	C30B  29/40	125	結晶自体に特徴あるもの〔例；結晶の物性，不純物濃度の特定〕	Characterized by crystal per se, e.g. determination of  physical properties and concentration of impurities in crystal
C30B  29/40  B	2	0	4G077	C30B  29/40	76	結晶成長用の原料の合成，精製	Synthesis, refining of materials for crystal growth
C30B  29/40  C	2	0	4G077	C30B  29/40	155	結晶の処理	Treatment of crystals
C30B  29/40  D	2	0	4G077	C30B  29/40	58	Ａ３ＢＶ化合物結晶を用いた物品の用途	Purpose of articles using A3BV compound crystal
C30B  29/40  Z	2	0	4G077	C30B  29/40	113	その他	Others
C30B  29/40 501 \	3	3	4G077	C30B  29/40	1	液相からの成長	Growth from liquid state
C30B  29/40 501 A	3	0	4G077	C30B  29/40	247	引き上げ法によるもの	By pull-up method
C30B  29/40 501 B	3	0	4G077	C30B  29/40	205	液相から基板上に薄膜を成長させるもの	Growing film on substrate from liquid state
C30B  29/40 501 C	3	0	4G077	C30B  29/40	215	ノ−マルフリ−ジング又は温度勾配凝固によるもの	By normal freezing or temperature gradient coagulation
C30B  29/40 501 D	3	0	4G077	C30B  29/40	22	帯域溶融法によるもの	By band melting method
C30B  29/40 501 E	3	0	4G077	C30B  29/40	5	溶質合成拡散法によるもの	By solute synthesis diffusion method
C30B  29/40 501 Z	3	0	4G077	C30B  29/40	21	その他	Others
C30B  29/40 502 \	3	3	4G077	C30B  29/40	7	気相からの成長	Growth from gas state
C30B  29/40 502 A	3	0	4G077	C30B  29/40	81	基板上への薄膜の成長〔分子線によるものは，Ｋへ〕	Growth of film on substrate (by molecular beam K)
C30B  29/40 502 B	3	1	4G077	C30B  29/40	48	原料ガスの選択に特徴あるもの	Characterized by selection of material gas
C30B  29/40 502 C	3	2	4G077	C30B  29/40	57	３，Ｖ族源以外の成分ガス〔例．不純物ガス，キヤリア−ガス〕の選択に特徴あるもの	Characterized by selection of ingredient gas other than 3, V group, e.g. impurity gas, carrier gas
C30B  29/40 502 D	3	1	4G077	C30B  29/40	97	原料ガスの生成，供給，排出に特徴あるもの	Generation, supply, discharge of material gas
C30B  29/40 502 E	3	2	4G077	C30B  29/40	84	原料ガスの供給量，成分比を成長中に変化させるもの〔例；成分を交互に供給するもの，特定成分の供給量を変えるもの〕	Changing supply volume, mix of material gas during growth, e.g. alternately supplying ingredients, changing supply volume of certain ingredient
C30B  29/40 502 F	3	1	4G077	C30B  29/40	57	基板材料に特徴のあるもの	Characterized by substrate materials
C30B  29/40 502 G	3	1	4G077	C30B  29/40	52	基板の処理〔基板上に他の被膜をコ−テイングしてのち成長させるものは，Ｈへ〕	Treatment of substrates (Forming other film of Si on substrate that later growing it, H)
C30B  29/40 502 H	3	1	4G077	C30B  29/40	181	基板と成長層との間に他の層〔例．バツフア層〕を形成するもの又は基板上に複数の成長層を形成するもの	Forming other layer between substrate and growth layer, e.g. buffer layer, or forming multiple growth layers on substrate
C30B  29/40 502 J	3	1	4G077	C30B  29/40	25	基板上の特定領域に成長させるもの	Growing on certain areas of substrate
C30B  29/40 502 K	3	1	4G077	C30B  29/40	133	分子線により成長させるもの	Growing by molecular beam
C30B  29/40 502 L	3	0	4G077	C30B  29/40	14	薄膜以外の形状の結晶を気相法で得るもの	Obtaining crystal of shapes other than film from the gas method
C30B  29/40 502 Z	3	0	4G077	C30B  29/40	23	その他	Others
C30B  29/42  \	3	3	4G077	C30B  29/42	1274	ひ化ガリウム［３］	Gallium arsenide [3]
C30B  29/44  \	3	3	4G077	C30B  29/44	186	りん化ガリウム［３］	Gallium phosphide [3]
C30B  29/46  \	2	2	4G077	C30B  29/46	250	硫黄，セレンまたはテルルを含む化合物［３］	Sulfur-, selenium- or tellurium-containing compounds [3]
C30B  29/48  \	3	3	4G077	C30B  29/48	960	ＡＩＩＢＶＩ化合物［３］	A<sub>II</sub>B<sub>VI</sub> compounds [3]
C30B  29/50  \	4	4	4G077	C30B  29/50	19	硫化カドミウム［３］	Cadmium sulfide [3]
C30B  29/52  \	2	2	4G077	C30B  29/52	404	合金［３］	Alloys [3]
C30B  29/54  \	1	1	4G077	C30B  29/54	293	有機化合物［３］	Organic compounds [3]
C30B  29/56  \	2	2	4G077	C30B  29/56	34	酒石酸塩［３］	Tartrates [3]
C30B  29/58  \	2	2	4G077	C30B  29/58	270	高分子化合物［３］	Macromolecular compounds [3]
C30B  29/60  \	1	1	4G077	C30B  29/60	91	形状により特徴づけられたもの［３］	characterised by shape [3]
C30B  29/62  \	2	2	4G077	C30B  29/62	140	ひげ結晶または針状結晶［３］	Whiskers or needles [3]
C30B  29/62  A	2	0	4G077	C30B  29/62	110	酸化物〔複合酸化物は，Ｅへ〕	Oxides (composite oxides, E)
C30B  29/62  B	2	1	4G077	C30B  29/62	36	アルミナ	Alumina
C30B  29/62  C	2	1	4G077	C30B  29/62	29	酸化チタン	Titanium oxides
C30B  29/62  D	2	1	4G077	C30B  29/62	75	酸化亜鉛	Zinc oxides
C30B  29/62  E	2	0	4G077	C30B  29/62	98	複合酸化物；酸素酸塩	Composite oxides; oxysalt
C30B  29/62  F	2	1	4G077	C30B  29/62	118	チタン酸塩	Titanates
C30B  29/62  G	2	1	4G077	C30B  29/62	41	硫酸塩〔例．硫酸カルシウム〕	Hydrosulphates, e.g. calcium sulphates
C30B  29/62  H	2	1	4G077	C30B  29/62	59	ホウ酸塩	Borates
C30B  29/62  J	2	0	4G077	C30B  29/62	27	炭化物	Carbides
C30B  29/62  K	2	1	4G077	C30B  29/62	43	炭化けい素	Silicon carbide
C30B  29/62  L	2	2	4G077	C30B  29/62	145	二酸化けい素を原料とするもの	Using silicon dioxide as material
C30B  29/62  M	2	2	4G077	C30B  29/62	24	Ｓｉ，Ｓｉ合金を原料とするもの	Using Si, Si alloy as material
C30B  29/62  N	2	2	4G077	C30B  29/62	43	分解性けい素化合物〔例；有機けい素化合物〕又は気体状けい素化合物を原料とするもの	Using degradable silicon compounds, e.g. organic silicon compounds, or gaseous silicon compounds as material
C30B  29/62  P	2	2	4G077	C30B  29/62	29	炭化けい素ウイスカ−の精製又は処理	Refining or treatment of silicon carbide whisker
C30B  29/62  Q	2	0	4G077	C30B  29/62	70	窒化物	Nitrides
C30B  29/62  R	2	1	4G077	C30B  29/62	94	窒化けい素	Silicon nitride
C30B  29/62  S	2	0	4G077	C30B  29/62	128	炭素	Carbon
C30B  29/62  U	2	0	4G077	C30B  29/62	95	金属，合金	Metals, alloys
C30B  29/62  V	2	0	4G077	C30B  29/62	58	製造法一般〔製造されるウイスカ−が特定されていないもの〕	Manufacturing method in general (with manufactured whiskers not specified)
C30B  29/62  W	2	0	4G077	C30B  29/62	63	ウイスカ−の処理〔ウイスカ−が特定されていないもの〕	Treatment of whisker (with whisker not specified)
C30B  29/62  Z	2	0	4G077	C30B  29/62	57	その他	Others
C30B  29/64  \	2	2	4G077	C30B  29/64	49	平型結晶，例．板，帯状体または円板［５］	Flat crystals, e.g. plates, strips or disks [5]
C30B  29/66  \	2	2	4G077	C30B  29/66	152	複雑な幾何学的形状の結晶，例．管，円筒［５］	Crystals of complex geometrical shape, e.g. tubes, cylinders [5]
C30B  29/68  \	2	2	4G077	C30B  29/68	183	層構造からなる結晶，例．“超格子”［５］	Crystals with laminate structure, e.g. "superlattices" [5]
C30B  30/00  \	0	0	4G077	C30B  30/00	70	電場，磁場，波動エネルギーまたはその他の特殊な物理的条件の作用により特徴づけられる単結晶または特定構造を有する均質多結晶物質の製造［５］	Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]
C30B  30/02  \	1	1	4G077	C30B  30/02	74	電場を用いるもの，例．電気分解［５］	using electric fields, e.g. electrolysis [5]
C30B  30/04  \	1	1	4G077	C30B  30/04	153	磁場を用いるもの［５］	using magnetic fields [5]
C30B  30/06  \	1	1	4G077	C30B  30/06	14	機械的振動を用いるもの［５］	using mechanical vibrations [5]
C30B  30/08  \	1	1	4G077	C30B  30/08	125	無重力または低重力の条件下のもの［５］	in conditions of zero-gravity or low gravity [5]
C30B  31/00  \	0	0	4G077	C30B  31/00	33	単結晶または特定構造を有する均質多結晶物質への拡散またはドーブ工程；そのための装置［３，５］	Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3,5]
C30B  31/02  \	1	1	4G077	C30B  31/02	175	固相状態の拡散物質と接触させるもの［３］	by contacting with diffusion materials in the solid state [3]
C30B  31/04  \	1	1	4G077	C30B  31/04	26	液相状態の拡散物質と接触させるもの［３］	by contacting with diffusion materials in the liquid state [3]
C30B  31/06  \	1	1	4G077	C30B  31/06	355	ガス状態の拡散物質と接触させるもの［２００６．０１］	by contacting with diffusion material in the gaseous state
C30B  31/08  \	2	2	4G077	C30B  31/08	11	拡散物質が被拡散元素の化合物であるもの［３］	the diffusion materials being a compound of the elements to be diffused [3]
C30B  31/10  \	2	2	4G077	C30B  31/10	40	反応室；そのための材料の選択［３］	Reaction chambers; Selection of materials therefor [3]
C30B  31/12  \	2	2	4G077	C30B  31/12	132	反応室の加熱［３］	Heating of the reaction chamber [3]
C30B  31/14  \	2	2	4G077	C30B  31/14	51	基板保持体またはサセプタ［３］	Substrate holders or susceptors [3]
C30B  31/16  \	2	2	4G077	C30B  31/16	59	ガスの供給および排出手段；ガス流の調節［３］	Feed and outlet means for the gases; Modifying the flow of the gases [3]
C30B  31/18  \	2	2	4G077	C30B  31/18	20	制御または調整［３］	Controlling or regulating [3]
C30B  31/20  \	1	1	4G077	C30B  31/20	59	電磁波照射または粒子線放射によるドービング［３］	Doping by irradiation with electromagnetic waves or by particle radiation [3]
C30B  31/22  \	2	2	4G077	C30B  31/22	233	イオン注入によるもの［３］	by ion-implantation [3]
C30B  33/00  \	0	0	4G077	C30B  33/00	1444	単結晶または特定構造を有する均質多結晶物質の後処理（Ｃ３０Ｂ３１／００が優先）［３，５］	After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00&nbsp;takes precedence) [3,5]
C30B  33/02  \	1	1	4G077	C30B  33/02	1550	熱処理（Ｃ３０Ｂ３３／０４，Ｃ３０Ｂ３３／０６が優先）［５］	Heat treatment (C30B 33/04, C30B 33/06 take precedence) [5]
C30B  33/04  \	1	1	4G077	C30B  33/04	318	電場，磁場または粒子線放射を用いるもの［５］	using electric or magnetic fields or particle radiation [5]
C30B  33/06  \	1	1	4G077	C30B  33/06	317	結晶の結合［５］	Joining of crystals [5]
C30B  33/08  \	1	1	4G077	C30B  33/08	242	エッチング［５］	Etching [5]
C30B  33/10  \	2	2	4G077	C30B  33/10	358	溶液または融液中で［５］	in solutions or melts [5]
C30B  33/12  \	2	2	4G077	C30B  33/12	262	気体雰囲気またはプラズマ下で［５］	in gas atmosphere or plasma [5]
C30B  35/00  \	0	0	4G077	C30B  35/00	432	単結晶または特定構造を有する均質多結晶物質の成長，製造または後処理のために特に適合した他に分類されない装置［３，５］	Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [3,5]
