B81C1/00	7	Manufacture or treatment of devices or systems in or on a substrate (B81C3/00 takes precedence)	B81C1/00	B81C1/00		826
B81C1/00007	8	{Assembling automatically hinged components, i.e. self-assembly processes (self-assembly mechanisms B81B7/0003)}	B81C1/00	B81C1/00		79
B81C1/00015	8	{for manufacturing microsystems}	B81C1/00	B81C1/00		862
B81C1/00023	9	{without movable or flexible elements (array of static structures for functionalising surfaces in B81C1/00206; manufacture of MEMS devices for specific applications, see relevant places, e.g. microreactors B01J19/0093, lab-on-chip B01L3/5027, micromixers B01F33/30)}	B81C1/00	B81C1/00		187
B81C1/00031	10	{Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)}	B81C1/00	B81C1/00		730
B81C1/00039	10	{Anchors}	B81C1/00	B81C1/00		51
B81C1/00047	10	{Cavities}	B81C1/00	B81C1/00		398
B81C1/00055	10	{Grooves}	B81C1/00	B81C1/00		79
B81C1/00063	11	{Trenches}	B81C1/00	B81C1/00		117
B81C1/00071	11	{Channels}	B81C1/00	B81C1/00		227
B81C1/00079	11	{Grooves not provided for in groups B81C1/00063&#160;-&#160;B81C1/00071}	B81C1/00	B81C1/00		12
B81C1/00087	10	{Holes}	B81C1/00	B81C1/00		291
B81C1/00095	10	{Interconnects}	B81C1/00	B81C1/00		299
B81C1/00103	10	{Structures having a predefined profile, e.g. sloped or rounded grooves}	B81C1/00	B81C1/00		163
B81C1/00111	10	{Tips, pillars, i.e. raised structures (microneedles A61M37/0015)}	B81C1/00	B81C1/00		512
B81C1/00119	10	{Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems}	B81C1/00	B81C1/00		544
B81C1/00126	10	{Static structures not provided for in groups B81C1/00031&#160;-&#160;B81C1/00119}	B81C1/00	B81C1/00		110
B81C1/00134	9	{comprising flexible or deformable structures (manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C19/5719, pressure sensors G01L9/0042, accelerometers G01P15/0802, acoustic transducers or diaphragms therefor H04R31/00)}	B81C1/00	B81C1/00		468
B81C1/00142	10	{Bridges (deformable micromirrors G02B26/0841)}	B81C1/00	B81C1/00		259
B81C1/0015	10	{Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244)}	B81C1/00	B81C1/00		520
B81C1/00158	10	{Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039)}	B81C1/00	B81C1/00		857
B81C1/00166	10	{Electrodes}	B81C1/00	B81C1/00		316
B81C1/00174	10	{See-saws}	B81C1/00	B81C1/00		30
B81C1/00182	10	{Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer}	B81C1/00	B81C1/00		469
B81C1/0019	10	{Flexible or deformable structures not provided for in groups B81C1/00142&#160;-&#160;B81C1/00182}	B81C1/00	B81C1/00		142
B81C1/00198	9	{comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements}	B81C1/00	B81C1/00		158
B81C1/00206	9	{Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties}	B81C1/00	B81C1/00		420
B81C1/00214	9	{Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices}	B81C1/00	B81C1/00		298
B81C1/00222	9	{Integrating an electronic processing unit with a micromechanical structure}	B81C1/00	B81C1/00		47
B81C1/0023	10	{Packaging together an electronic processing unit die and a micromechanical structure die (MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261)}	B81C1/00	B81C1/00		438
B81C1/00238	10	{Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure}	B81C1/00	B81C1/00		437
B81C1/00246	10	{Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate}	B81C1/00	B81C1/00		573
B81C1/00253	10	{Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C1/0023&#160;-&#160;B81C1/00246}	B81C1/00	B81C1/00		37
B81C1/00261	9	{Processes for packaging MEMS devices (MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023)}	B81C1/00	B81C1/00		681
B81C1/00269	10	{Bonding of solid lids or wafers to the substrate}	B81C1/00	B81C1/00		1084
B81C1/00277	10	{for maintaining a controlled atmosphere inside of the cavity containing the MEMS}	B81C1/00	B81C1/00		121
B81C1/00285	11	{using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters}	B81C1/00	B81C1/00		308
B81C1/00293	11	{maintaining a controlled atmosphere with processes not provided for in B81C1/00285}	B81C1/00	B81C1/00		291
B81C1/00301	10	{Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias}	B81C1/00	B81C1/00		822
B81C1/00309	10	{suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound}	B81C1/00	B81C1/00		217
B81C1/00317	10	{Packaging optical devices}	B81C1/00	B81C1/00		152
B81C1/00325	10	{for reducing stress inside of the package structure}	B81C1/00	B81C1/00		220
B81C1/00333	10	{Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269&#160;-&#160;B81C1/00325}	B81C1/00	B81C1/00		393
B81C1/00341	9	{Processes for manufacturing microsystems not provided for in groups B81C1/00023&#160;-&#160;B81C1/00261}	B81C1/00	B81C1/00		77
B81C1/00349	8	{Creating layers of material on a substrate}	B81C1/00	B81C1/00		673
B81C1/00357	9	{involving bonding one or several substrates on a non-temporary support, e.g. another substrate}	B81C1/00	B81C1/00		160
B81C1/00365	9	{having low tensile stress between layers}	B81C1/00	B81C1/00		37
B81C1/00373	9	{Selective deposition, e.g. printing or microcontact printing}	B81C1/00	B81C1/00		269
B81C1/0038	9	{Processes for creating layers of materials not provided for in groups B81C1/00357&#160;-&#160;B81C1/00373}	B81C1/00	B81C1/00		287
B81C1/00388	8	{Etch mask forming}	B81C1/00	B81C1/00		207
B81C1/00396	9	{Mask characterised by its composition, e.g. multilayer masks}	B81C1/00	B81C1/00		181
B81C1/00404	9	{Mask characterised by its size, orientation or shape}	B81C1/00	B81C1/00		200
B81C1/00412	9	{Mask characterised by its behaviour during the etching process, e.g. soluble masks}	B81C1/00	B81C1/00		34
B81C1/0042	9	{Compensation masks in orientation dependent etching}	B81C1/00	B81C1/00		6
B81C1/00428	9	{Etch mask forming processes not provided for in groups B81C1/00396&#160;-&#160;B81C1/0042}	B81C1/00	B81C1/00		75
B81C1/00436	8	{Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate}	B81C1/00	B81C1/00		127
B81C1/00444	9	{Surface micromachining, i.e. structuring layers on the substrate}	B81C1/00	B81C1/00		162
B81C1/0046	10	{using stamping, e.g. imprinting (nanoimprinting for making etch masks G03F7/0002)}	B81C1/00	B81C1/00		304
B81C1/00468	10	{Releasing structures}	B81C1/00	B81C1/00		76
B81C1/00476	11	{removing a sacrificial layer (B81C1/00912 takes precedence)}	B81C1/00	B81C1/00		333
B81C1/00484	11	{Processes for releasing structures not provided for in group B81C1/00476}	B81C1/00	B81C1/00		59
B81C1/00492	10	{Processes for surface micromachining not provided for in groups B81C1/0046&#160;-&#160;B81C1/00484}	B81C1/00	B81C1/00		122
B81C1/005	9	{Bulk micromachining}	B81C1/00	B81C1/00		55
B81C1/00507	10	{Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements (SIMOX techniques H10W10/10)}	B81C1/00	B81C1/00		30
B81C1/00515	10	{Bulk micromachining techniques not provided for in B81C1/00507}	B81C1/00	B81C1/00		44
B81C1/00523	9	{Etching material}	B81C1/00	B81C1/00		369
B81C1/00531	10	{Dry etching}	B81C1/00	B81C1/00		664
B81C1/00539	10	{Wet etching}	B81C1/00	B81C1/00		420
B81C1/00547	10	{Etching processes not provided for in groups B81C1/00531&#160;-&#160;B81C1/00539}	B81C1/00	B81C1/00		104
B81C1/00555	9	{Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity (B81C1/00023&#160;-&#160;B81C1/0019 take precedence)}	B81C1/00	B81C1/00		93
B81C1/00563	10	{Avoid or control over-etching}	B81C1/00	B81C1/00		22
B81C1/00571	11	{Avoid or control under-cutting}	B81C1/00	B81C1/00		68
B81C1/00579	11	{Avoid charge built-up}	B81C1/00	B81C1/00		29
B81C1/00587	11	{Processes for avoiding or controlling over-etching not provided for in B81C1/00571&#160;-&#160;B81C1/00579}	B81C1/00	B81C1/00		52
B81C1/00595	10	{Control etch selectivity}	B81C1/00	B81C1/00		150
B81C1/00603	10	{Aligning features and geometries on both sides of a substrate, e.g. when double side etching}	B81C1/00	B81C1/00		31
B81C1/00611	10	{Processes for the planarisation of structures (planarising depositions C23C, H10)}	B81C1/00	B81C1/00		96
B81C1/00619	10	{Forming high aspect ratio structures having deep steep walls}	B81C1/00	B81C1/00		168
B81C1/00626	10	{Processes for achieving a desired geometry not provided for in groups B81C1/00563&#160;-&#160;B81C1/00619}	B81C1/00	B81C1/00		188
B81C1/00634	9	{Processes for shaping materials not provided for in groups B81C1/00444&#160;-&#160;B81C1/00626}	B81C1/00	B81C1/00		77
B81C1/00642	8	{for improving the physical properties of a device}	B81C1/00	B81C1/00		66
B81C1/0065	9	{Mechanical properties}	B81C1/00	B81C1/00		57
B81C1/00658	10	{Treatments for improving the stiffness of a vibrating element}	B81C1/00	B81C1/00		69
B81C1/00666	10	{Treatments for controlling internal stress or strain in MEMS structures}	B81C1/00	B81C1/00		259
B81C1/00674	10	{Treatments for improving wear resistance}	B81C1/00	B81C1/00		46
B81C1/00682	10	{Treatments for improving mechanical properties, not provided for in B81C1/00658&#160;-&#160;B81C1/0065}	B81C1/00	B81C1/00		64
B81C1/0069	9	{Thermal properties, e.g. improve thermal insulation}	B81C1/00	B81C1/00		117
B81C1/00698	9	{Electrical characteristics, e.g. by doping materials}	B81C1/00	B81C1/00		113
B81C1/00706	9	{Magnetic properties}	B81C1/00	B81C1/00		6
B81C1/00714	9	{Treatment for improving the physical properties not provided for in groups B81C1/0065&#160;-&#160;B81C1/00706}	B81C1/00	B81C1/00		42
B81C1/00777	8	{Preserve existing structures from alteration, e.g. temporary protection during manufacturing}	B81C1/00	B81C1/00		12
B81C1/00785	9	{Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching (B81C1/00563&#160;-&#160;B81C1/00595 take precedence)}	B81C1/00	B81C1/00		15
B81C1/00793	10	{Avoid contamination, e.g. absorption of impurities or oxidation}	B81C1/00	B81C1/00		39
B81C1/00801	10	{Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer (B81C1/00595, B81C1/00468 take precedence)}	B81C1/00	B81C1/00		162
B81C1/00809	10	{Methods to avoid chemical alteration not provided for in groups B81C1/00793&#160;-&#160;B81C1/00801}	B81C1/00	B81C1/00		6
B81C1/00817	9	{Avoid thermal destruction}	B81C1/00	B81C1/00		10
B81C1/00825	9	{Protect against mechanical threats, e.g. against shocks, or residues (B81C1/00261 take precedence)}	B81C1/00	B81C1/00		89
B81C1/00833	9	{Methods for preserving structures not provided for in groups B81C1/00785&#160;-&#160;B81C1/00825}	B81C1/00	B81C1/00		23
B81C1/00841	8	{Cleaning during or after manufacture (cleaning of semiconductor devices H10P50/00)}	B81C1/00	B81C1/00		17
B81C1/00849	9	{during manufacture}	B81C1/00	B81C1/00		114
B81C1/00857	9	{after manufacture, e.g. back-end of the line process}	B81C1/00	B81C1/00		21
B81C1/00865	8	{Multistep processes for the separation of wafers into individual elements}	B81C1/00	B81C1/00		59
B81C1/00873	9	{characterised by special arrangements of the devices, allowing an easier separation}	B81C1/00	B81C1/00		80
B81C1/0088	9	{Separation allowing recovery of the substrate or a part of the substrate, e.g. epitaxial lift-off}	B81C1/00	B81C1/00		16
B81C1/00888	9	{Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving}	B81C1/00	B81C1/00		109
B81C1/00896	9	{Temporary protection during separation into individual elements}	B81C1/00	B81C1/00		128
B81C1/00904	9	{Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873&#160;-&#160;B81C1/00896}	B81C1/00	B81C1/00		65
B81C1/00912	8	{Treatments or methods for avoiding stiction of flexible or moving parts of MEMS}	B81C1/00	B81C1/00		15
B81C1/0092	9	{For avoiding stiction during the manufacturing process of the device, e.g. during wet etching}	B81C1/00	B81C1/00		31
B81C1/00928	10	{Eliminating or avoiding remaining moisture after the wet etch release of the movable structure}	B81C1/00	B81C1/00		44
B81C1/00936	10	{Releasing the movable structure without liquid etchant}	B81C1/00	B81C1/00		35
B81C1/00944	10	{Maintaining a critical distance between the structures to be released}	B81C1/00	B81C1/00		28
B81C1/00952	10	{Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928&#160;-&#160;B81C1/00944}	B81C1/00	B81C1/00		48
B81C1/0096	9	{For avoiding stiction when the device is in use, i.e. after manufacture has been completed}	B81C1/00	B81C1/00		84
B81C1/00968	10	{Methods for breaking the stiction bond}	B81C1/00	B81C1/00		57
B81C1/00976	10	{Control methods for avoiding stiction, e.g. controlling the bias voltage}	B81C1/00	B81C1/00		33
B81C1/00984	10	{Methods for avoiding stiction when the device is in use not provided for in groups B81C1/00968&#160;-&#160;B81C1/00976}	B81C1/00	B81C1/00		31
B81C1/00992	9	{Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C1/0092&#160;-&#160;B81C1/00984}	B81C1/00	B81C1/00		7
B81C3/00	7	Assembling of devices or systems from individually processed components	B81C3/00	B81C3/00		218
B81C3/001	8	{Bonding of two components}	B81C3/00	B81C3/00		1092
B81C3/002	8	{Aligning microparts}	B81C3/00	B81C3/00		114
B81C3/004	9	{Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators}	B81C3/00	B81C3/00		67
B81C3/005	9	{Passive alignment, i.e. without a detection of the position of the elements or using only structural arrangements or thermodynamic forces}	B81C3/00	B81C3/00		69
B81C3/007	9	{Methods for aligning microparts not provided for in groups B81C3/004&#160;-&#160;B81C3/005}	B81C3/00	B81C3/00		8
B81C3/008	8	{Aspects related to assembling from individually processed components, not covered by groups B81C3/001&#160;-&#160;B81C3/002}	B81C3/00	B81C3/00		130
B81C99/00	7	Subject matter not provided for in other groups of this subclass	B81C99/00	B81C99/00		73
B81C99/0005	8	{Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same}	B81C99/00	B81C99/00		48
B81C99/001	9	{for cutting, cleaving or grinding}	B81C99/00	B81C99/00		45
B81C99/0015	9	{for microextrusion (extrusion heads in general B29C48/30)}	B81C99/00	B81C99/00		16
B81C99/002	9	{Apparatus for assembling MEMS, e.g. micromanipulators (micromanipulators per seB25J7/00)}	B81C99/00	B81C99/00		168
B81C99/0025	9	{Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001&#160;-&#160;B81C99/002}	B81C99/00	B81C99/00		97
B81C99/003	8	{Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants}	B81C99/00	B81C99/00		69
B81C99/0035	8	{Testing}	B81C99/00	B81C99/00		59
B81C99/004	9	{during manufacturing}	B81C99/00	B81C99/00		150
B81C99/0045	9	{End test of the packaged device}	B81C99/00	B81C99/00		98
B81C99/005	9	{Test apparatus}	B81C99/00	B81C99/00		141
B81C99/0055	8	{Manufacturing logistics}	B81C99/00	B81C99/00		2
B81C99/006	9	{Design; Simulation}	B81C99/00	B81C99/00		24
B81C99/0065	9	{Process control; Yield prediction}	B81C99/00	B81C99/00		66
B81C99/007	9	{Marking}	B81C99/00	B81C99/00		14
B81C99/0075	8	{Manufacture of substrate-free structures}	B81C99/00	B81C99/00		10
B81C99/008	9	{separating the processed structure from a mother substrate}	B81C99/00	B81C99/00		124
B81C99/0085	9	{using moulds and master templates, e.g. for hot-embossing}	B81C99/00	B81C99/00		237
B81C99/009	9	{Manufacturing the stamps or the moulds}	B81C99/00	B81C99/00		174
B81C99/0095	9	{Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C99/008&#160;-&#160;B81C99/009}	B81C99/00	B81C99/00		98
B81C2201/00	7	Manufacture or treatment of microstructural devices or systems	CPCONLY	B81C2201/00		9
B81C2201/01	8	in or on a substrate	CPCONLY	B81C2201/01		81
B81C2201/0101	9	Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning	CPCONLY	B81C2201/0101		41
B81C2201/0102	10	Surface micromachining	CPCONLY	B81C2201/0102		32
B81C2201/0104	11	Chemical-mechanical polishing [CMP]	CPCONLY	B81C2201/0104		83
B81C2201/0105	11	Sacrificial layer	CPCONLY	B81C2201/0105		75
B81C2201/0107	12	Sacrificial metal	CPCONLY	B81C2201/0107		55
B81C2201/0108	12	Sacrificial polymer, ashing of organics	CPCONLY	B81C2201/0108		96
B81C2201/0109	12	Sacrificial layers not provided for in B81C2201/0107&#160;-&#160;B81C2201/0108	CPCONLY	B81C2201/0109		260
B81C2201/0111	10	Bulk micromachining	CPCONLY	B81C2201/0111		34
B81C2201/0112	11	Bosch process	CPCONLY	B81C2201/0112		111
B81C2201/0114	11	Electrochemical etching, anodic oxidation	CPCONLY	B81C2201/0114		52
B81C2201/0115	11	Porous silicon	CPCONLY	B81C2201/0115		136
B81C2201/0116	11	Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities	CPCONLY	B81C2201/0116		61
B81C2201/0118	10	Processes for the planarization of structures	CPCONLY	B81C2201/0118		8
B81C2201/0119	11	involving only addition of materials, i.e. additive planarization	CPCONLY	B81C2201/0119		23
B81C2201/0121	11	involving addition of material followed by removal of parts of said material, i.e. subtractive planarization	CPCONLY	B81C2201/0121		23
B81C2201/0122	11	Selective addition	CPCONLY	B81C2201/0122		8
B81C2201/0123	11	Selective removal	CPCONLY	B81C2201/0123		20
B81C2201/0125	11	Blanket removal, e.g. polishing	CPCONLY	B81C2201/0125		48
B81C2201/0126	11	Processes for the planarization of structures not provided for in B81C2201/0119&#160;-&#160;B81C2201/0125	CPCONLY	B81C2201/0126		21
B81C2201/0128	10	Processes for removing material	CPCONLY	B81C2201/0128		22
B81C2201/0129	11	Diamond turning	CPCONLY	B81C2201/0129		2
B81C2201/013	11	Etching	CPCONLY	B81C2201/013		271
B81C2201/0132	12	Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling	CPCONLY	B81C2201/0132		656
B81C2201/0133	12	Wet etching	CPCONLY	B81C2201/0133		336
B81C2201/0135	12	Controlling etch progression	CPCONLY	B81C2201/0135		18
B81C2201/0136	13	by doping limited material regions	CPCONLY	B81C2201/0136		61
B81C2201/0138	13	Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition	CPCONLY	B81C2201/0138		46
B81C2201/0139	13	with the electric potential of an electrochemical etching	CPCONLY	B81C2201/0139		14
B81C2201/014	13	by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal	CPCONLY	B81C2201/014		271
B81C2201/0142	13	Processes for controlling etch progression not provided for in B81C2201/0136&#160;-&#160;B81C2201/014	CPCONLY	B81C2201/0142		56
B81C2201/0143	11	Focussed beam, i.e. laser, ion or e-beam	CPCONLY	B81C2201/0143		215
B81C2201/0145	11	Spark erosion	CPCONLY	B81C2201/0145		5
B81C2201/0146	11	Processes for removing material not provided for in B81C2201/0129&#160;-&#160;B81C2201/0145	CPCONLY	B81C2201/0146		35
B81C2201/0147	10	Film patterning	CPCONLY	B81C2201/0147		27
B81C2201/0149	11	Forming nanoscale microstructures using auto-arranging or self-assembling material	CPCONLY	B81C2201/0149		313
B81C2201/015	11	Imprinting	CPCONLY	B81C2201/015		12
B81C2201/0152	12	Step and Flash imprinting, UV imprinting	CPCONLY	B81C2201/0152		13
B81C2201/0153	12	Imprinting techniques not provided for in B81C2201/0152	CPCONLY	B81C2201/0153		50
B81C2201/0154	11	other processes for film patterning not provided for in B81C2201/0149&#160;-&#160;B81C2201/015	CPCONLY	B81C2201/0154		30
B81C2201/0156	10	Lithographic techniques	CPCONLY	B81C2201/0156		68
B81C2201/0157	11	Gray-scale mask technology	CPCONLY	B81C2201/0157		25
B81C2201/0159	11	Lithographic techniques not provided for in B81C2201/0157	CPCONLY	B81C2201/0159		86
B81C2201/016	10	Passivation	CPCONLY	B81C2201/016		67
B81C2201/0161	9	Controlling physical properties of the material	CPCONLY	B81C2201/0161		16
B81C2201/0163	10	Controlling internal stress of deposited layers	CPCONLY	B81C2201/0163		10
B81C2201/0164	11	by doping the layer	CPCONLY	B81C2201/0164		27
B81C2201/0166	11	by ion implantation	CPCONLY	B81C2201/0166		15
B81C2201/0167	11	by adding further layers of materials having complementary strains, i.e. compressive or tensile strain	CPCONLY	B81C2201/0167		101
B81C2201/0169	11	by post-annealing	CPCONLY	B81C2201/0169		42
B81C2201/017	11	Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164&#160;-&#160;B81C2201/0169	CPCONLY	B81C2201/017		64
B81C2201/0171	10	Doping materials	CPCONLY	B81C2201/0171		19
B81C2201/0173	11	Thermo-migration of impurities from a solid, e.g. from a doped deposited layer	CPCONLY	B81C2201/0173		16
B81C2201/0174	9	for making multi-layered devices, film deposition or growing	CPCONLY	B81C2201/0174		73
B81C2201/0176	10	Chemical vapour Deposition	CPCONLY	B81C2201/0176		119
B81C2201/0177	11	Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy	CPCONLY	B81C2201/0177		62
B81C2201/0178	11	Oxidation	CPCONLY	B81C2201/0178		81
B81C2201/018	11	Plasma polymerization, i.e. monomer or polymer deposition	CPCONLY	B81C2201/018		18
B81C2201/0181	10	Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology	CPCONLY	B81C2201/0181		154
B81C2201/0183	10	Selective deposition	CPCONLY	B81C2201/0183		23
B81C2201/0184	11	Digital lithography, e.g. using an inkjet print-head	CPCONLY	B81C2201/0184		37
B81C2201/0185	11	Printing, e.g. microcontact printing	CPCONLY	B81C2201/0185		46
B81C2201/0187	11	Controlled formation of micro- or nanostructures using a template positioned on a substrate	CPCONLY	B81C2201/0187		40
B81C2201/0188	11	Selective deposition techniques not provided for in B81C2201/0184&#160;-&#160;B81C2201/0187	CPCONLY	B81C2201/0188		58
B81C2201/019	10	Bonding or gluing multiple substrate layers	CPCONLY	B81C2201/019		520
B81C2201/0191	10	Transfer of a layer from a carrier wafer to a device wafer	CPCONLY	B81C2201/0191		91
B81C2201/0192	11	by cleaving the carrier wafer	CPCONLY	B81C2201/0192		31
B81C2201/0194	11	the layer being structured	CPCONLY	B81C2201/0194		80
B81C2201/0195	11	the layer being unstructured	CPCONLY	B81C2201/0195		23
B81C2201/0197	10	Processes for making multi-layered devices not provided for in groups B81C2201/0176&#160;-&#160;B81C2201/0192	CPCONLY	B81C2201/0197		80
B81C2201/0198	9	for making a masking layer	CPCONLY	B81C2201/0198		153
B81C2201/03	8	Processes for manufacturing substrate-free structures	CPCONLY	B81C2201/03		3
B81C2201/032	9	LIGA process	CPCONLY	B81C2201/032		55
B81C2201/034	9	Moulding	CPCONLY	B81C2201/034		150
B81C2201/036	9	Hot embossing	CPCONLY	B81C2201/036		41
B81C2201/038	9	Processes for manufacturing substrate-free structures not provided for in B81C2201/034&#160;-&#160;B81C2201/036	CPCONLY	B81C2201/038		28
B81C2201/05	8	Temporary protection of devices or parts of the devices during manufacturing	CPCONLY	B81C2201/05		9
B81C2201/053	9	Depositing a protective layers	CPCONLY	B81C2201/053		182
B81C2201/056	9	Releasing structures at the end of the manufacturing process	CPCONLY	B81C2201/056		66
B81C2201/11	8	Treatments for avoiding stiction of elastic or moving parts of MEMS	CPCONLY	B81C2201/11		10
B81C2201/112	9	Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts	CPCONLY	B81C2201/112		146
B81C2201/115	9	Roughening a surface	CPCONLY	B81C2201/115		57
B81C2201/117	9	Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers	CPCONLY	B81C2201/117		27
B81C2203/00	7	Forming microstructural systems	CPCONLY	B81C2203/00		10
B81C2203/01	8	Packaging MEMS	CPCONLY	B81C2203/01		120
B81C2203/0109	9	Bonding an individual cap on the substrate	CPCONLY	B81C2203/0109		498
B81C2203/0118	9	Bonding a wafer on the substrate, i.e. where the cap consists of another wafer	CPCONLY	B81C2203/0118		583
B81C2203/0127	9	Using a carrier for applying a plurality of packaging lids to the system wafer	CPCONLY	B81C2203/0127		40
B81C2203/0136	9	Growing or depositing of a covering layer	CPCONLY	B81C2203/0136		295
B81C2203/0145	9	Hermetically sealing an opening in the lid	CPCONLY	B81C2203/0145		384
B81C2203/0154	9	Moulding a cap over the MEMS device	CPCONLY	B81C2203/0154		190
B81C2203/0163	9	Reinforcing a cap, e.g. with ribs	CPCONLY	B81C2203/0163		41
B81C2203/0172	9	Seals	CPCONLY	B81C2203/0172		62
B81C2203/0181	10	Using microheaters for bonding the lid	CPCONLY	B81C2203/0181		17
B81C2203/019	10	characterised by the material or arrangement of seals between parts	CPCONLY	B81C2203/019		432
B81C2203/03	8	Bonding two components	CPCONLY	B81C2203/03		53
B81C2203/031	9	Anodic bondings	CPCONLY	B81C2203/031		152
B81C2203/032	9	Gluing	CPCONLY	B81C2203/032		249
B81C2203/033	9	Thermal bonding	CPCONLY	B81C2203/033		22
B81C2203/035	10	Soldering	CPCONLY	B81C2203/035		262
B81C2203/036	10	Fusion bonding	CPCONLY	B81C2203/036		254
B81C2203/037	10	Thermal bonding techniques not provided for in B81C2203/035&#160;-&#160;B81C2203/036	CPCONLY	B81C2203/037		94
B81C2203/038	9	Bonding techniques not provided for in B81C2203/031&#160;-&#160;B81C2203/037	CPCONLY	B81C2203/038		121
B81C2203/05	8	Aligning components to be assembled	CPCONLY	B81C2203/05		8
B81C2203/051	9	Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors	CPCONLY	B81C2203/051		73
B81C2203/052	9	Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus	CPCONLY	B81C2203/052		2
B81C2203/054	10	using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls	CPCONLY	B81C2203/054		57
B81C2203/055	10	using the surface tension of fluid solder to align the elements	CPCONLY	B81C2203/055		8
B81C2203/057	10	Passive alignment techniques not provided for in B81C2203/054&#160;-&#160;B81C2203/055	CPCONLY	B81C2203/057		13
B81C2203/058	9	Aligning components using methods not provided for in B81C2203/051&#160;-&#160;B81C2203/052	CPCONLY	B81C2203/058		27
B81C2203/07	8	Integrating an electronic processing unit with a micromechanical structure	CPCONLY	B81C2203/07		8
B81C2203/0707	9	Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure	CPCONLY	B81C2203/0707		12
B81C2203/0714	10	Forming the micromechanical structure with a CMOS process	CPCONLY	B81C2203/0714		136
B81C2203/0721	10	Forming the micromechanical structure with a low-temperature process (B81C2203/0735 takes precedence)	CPCONLY	B81C2203/0721		11
B81C2203/0728	10	Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit	CPCONLY	B81C2203/0728		51
B81C2203/0735	10	Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit	CPCONLY	B81C2203/0735		223
B81C2203/0742	10	Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit	CPCONLY	B81C2203/0742		81
B81C2203/075	10	the electronic processing unit being integrated into an element of the micromechanical structure	CPCONLY	B81C2203/075		29
B81C2203/0757	10	Topology for facilitating the monolithic integration	CPCONLY	B81C2203/0757		3
B81C2203/0764	11	Forming the micromechanical structure in a groove	CPCONLY	B81C2203/0764		7
B81C2203/0771	11	Stacking the electronic processing unit and the micromechanical structure	CPCONLY	B81C2203/0771		102
B81C2203/0778	11	Topology for facilitating the monolithic integration not provided for in B81C2203/0764&#160;-&#160;B81C2203/0771	CPCONLY	B81C2203/0778		34
B81C2203/0785	9	Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates	CPCONLY	B81C2203/0785		70
B81C2203/0792	10	Forming interconnections between the electronic processing unit and the micromechanical structure	CPCONLY	B81C2203/0792		326
B81C2900/00	7	Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems	CPCONLY	B81C2900/00		21
B81C2900/02	8	Microextrusion heads	CPCONLY	B81C2900/02		10
