H10F10/00	7	Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20)<br><br><u>WARNING</u><br>Group H10F10/00 is incomplete pending reclassification of documents from group H10F99/00. <br>Groups H10F99/00 and H10F10/00 should be considered in order to perform a complete search.	H10F10/00	H10F10/00		4028
H10F10/10	8	having potential barriers	H10F10/10	H10F10/10		1222
H10F10/11	9	Photovoltaic cells having point contact potential barriers (H10F10/18 takes precedence)	H10F10/11	H10F10/11		76
H10F10/12	9	Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers	H10F10/12	H10F10/12		163
H10F10/13	9	Photovoltaic cells having absorbing layers comprising graded bandgaps	H10F10/13	H10F10/13		210
H10F10/14	9	Photovoltaic cells having only PN homojunction potential barriers	H10F10/14	H10F10/14		3633
H10F10/142	10	comprising multiple PN homojunctions, e.g. tandem cells	H10F10/142	H10F10/142		1124
H10F10/1425	11	{Inverted metamorphic multi-junction [IMM] photovoltaic cells}	H10F10/142	H10F10/142		256
H10F10/144	10	comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells	H10F10/144	H10F10/144		496
H10F10/146	10	{Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}	H10F10/14	H10F10/14		1942
H10F10/148	10	{Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells}	H10F10/14	H10F10/14		512
H10F10/16	9	Photovoltaic cells having only PN heterojunction potential barriers	H10F10/16	H10F10/16		1733
H10F10/161	10	comprising multiple PN heterojunctions, e.g. tandem cells	H10F10/161	H10F10/161		1046
H10F10/162	10	comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells	H10F10/162	H10F10/162		657
H10F10/163	10	comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells	H10F10/163	H10F10/163		567
H10F10/164	10	comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells	H10F10/164	H10F10/164		490
H10F10/165	11	the heterojunctions being Group IV-IV&#160;heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells	H10F10/165	H10F10/165		578
H10F10/166	12	the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells	H10F10/166	H10F10/166		2010
H10F10/167	10	comprising Group I-III-VI&#160;materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells	H10F10/167	H10F10/167		1910
H10F10/169	10	{comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells}	H10F10/16	H10F10/16		150
H10F10/17	9	Photovoltaic cells having only PIN junction potential barriers	H10F10/17	H10F10/17		1806
H10F10/172	10	comprising multiple PIN junctions, e.g. tandem cells	H10F10/172	H10F10/172		918
H10F10/174	10	comprising monocrystalline or polycrystalline materials	H10F10/174	H10F10/174		331
H10F10/18	9	Photovoltaic cells having only Schottky potential barriers	H10F10/18	H10F10/18		310
H10F10/19	9	Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions	H10F10/19	H10F10/19		556
H10F19/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules<br><br><u>WARNING</u><br>Group H10F19/00 is incomplete pending reclassification of documents from group H10F99/00. <br>Groups H10F99/00 and H10F19/00 should be considered in order to perform a complete search.	H10F19/00	H10F19/00		6307
H10F19/10	8	comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions	H10F19/10	H10F19/10		286
H10F19/20	8	comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions (having multiple thin-film photovoltaic cells deposited on the same substrate&#160;H10F19/31)	H10F19/20	H10F19/20		481
H10F19/30	8	comprising thin-film photovoltaic cells	H10F19/30	H10F19/30		1509
H10F19/31	9	having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate	H10F19/31	H10F19/31		1694
H10F19/33	10	Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers	H10F19/33	H10F19/33		822
H10F19/35	10	Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers	H10F19/35	H10F19/35		847
H10F19/37	10	comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows	H10F19/37	H10F19/37		313
H10F19/40	8	comprising photovoltaic cells in a mechanically stacked configuration	H10F19/40	H10F19/40		710
H10F19/50	8	Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F19/75 takes precedence)	H10F19/50	H10F19/50		418
H10F19/70	8	comprising bypass diodes (bypass diodes in a junction box&#160;H02S40/34)	H10F19/70	H10F19/70		525
H10F19/75	9	the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate	H10F19/75	H10F19/75		369
H10F19/80	8	Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells	H10F19/80	H10F19/80		8454
H10F19/804	9	{Materials of encapsulations}	H10F19/80	H10F19/80		4583
H10F19/807	9	{Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets}	H10F19/80	H10F19/80		1820
H10F19/85	9	Protective back sheets	H10F19/85	H10F19/85		3239
H10F19/90	8	Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers (between thin-film photovoltaic cells on a single substrate H10F19/35)	H10F19/90	H10F19/90		1675
H10F19/902	9	{for series or parallel connection of photovoltaic cells}	H10F19/90	H10F19/90		3503
H10F19/904	10	{characterised by the shapes of the structures}	H10F19/90	H10F19/90		2333
H10F19/906	10	{characterised by the materials of the structures}	H10F19/90	H10F19/90		1240
H10F19/908	10	{for back-contact photovoltaic cells}	H10F19/90	H10F19/90		1317
H10F30/00	7	Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors<br><br><u>WARNING</u><br>Group H10F30/00 is incomplete pending reclassification of documents from group H10F99/00. <br>Groups H10F99/00 and H10F30/00 should be considered in order to perform a complete search.	H10F30/00	H10F30/00		1105
H10F30/10	8	the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors	H10F30/10	H10F30/10		1944
H10F30/15	9	{comprising amorphous semiconductors}	H10F30/10	H10F30/15		422
H10F30/20	8	the devices having potential barriers, e.g. phototransistors	H10F30/20	H10F30/20		1522
H10F30/21	9	the devices being sensitive to infrared, visible or ultraviolet radiation	H10F30/21	H10F30/21		1602
H10F30/22	10	the devices having only one potential barrier, e.g. photodiodes	H10F30/22	H10F30/22		653
H10F30/2205	11	{the potential barrier being a point contact}	H10F30/22	H10F30/22		12
H10F30/221	11	the potential barrier being a PN homojunction	H10F30/221	H10F30/221		1105
H10F30/2212	12	{the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes}	H10F30/221	H10F30/221		223
H10F30/2215	12	{the devices comprising active layers made of only Group III-V materials}	H10F30/221	H10F30/221		413
H10F30/2218	12	{the devices comprising active layers made of only Group IV-VI materials}	H10F30/221	H10F30/221		112
H10F30/222	11	the potential barrier being a PN heterojunction	H10F30/222	H10F30/222		1682
H10F30/223	11	the potential barrier being a PIN barrier	H10F30/223	H10F30/223		2065
H10F30/2235	12	{the devices comprising Group IV amorphous materials}	H10F30/223	H10F30/223		352
H10F30/225	11	the potential barrier working in avalanche mode, e.g. avalanche photodiodes	H10F30/225	H10F30/225		2128
H10F30/2255	12	{in which the active layers form heterostructures, e.g. SAM structures}	H10F30/225	H10F30/225		842
H10F30/227	11	the potential barrier being a Schottky barrier	H10F30/227	H10F30/227		685
H10F30/2275	12	{being a metal-semiconductor-metal [MSM] Schottky barrier}	H10F30/227	H10F30/227		443
H10F30/24	10	the devices having only two potential barriers, e.g. bipolar phototransistors	H10F30/24	H10F30/24		270
H10F30/245	11	{Bipolar phototransistors}	H10F30/24	H10F30/24		358
H10F30/26	10	the devices having three or more potential barriers, e.g. photothyristors	H10F30/26	H10F30/26		104
H10F30/263	11	{Photothyristors}	H10F30/26	H10F30/26		413
H10F30/2635	12	{Static induction photothyristors}	H10F30/26	H10F30/26		6
H10F30/28	10	the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors	H10F30/28	H10F30/28		330
H10F30/282	11	Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors	H10F30/282	H10F30/282		672
H10F30/2823	11	{the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD] (Insulated-gate field-effect transistors H10F30/282)}	H10F30/28	H10F30/282		355
H10F30/283	11	{the devices having Schottky gates}	H10F30/28	H10F30/28		29
H10F30/2837	12	{CCDs having Schottky gates}	H10F30/28	H10F30/28		4
H10F30/2843	12	{Schottky gate FETs, e.g. photo MESFETs}	H10F30/28	H10F30/28		52
H10F30/285	11	{the devices having PN homojunction gates}	H10F30/28	H10F30/28		11
H10F30/2857	12	{CCDs having PN homojunction gates}	H10F30/28	H10F30/28		9
H10F30/2863	12	{Field-effect phototransistors having PN homojunction gates}	H10F30/28	H10F30/28		118
H10F30/287	11	{the devices having PN heterojunction gates}	H10F30/28	H10F30/28		21
H10F30/2873	12	{CCDs having PN heterojunction gates}	H10F30/28	H10F30/28		1
H10F30/2877	12	{Field-effect phototransistors having PN heterojunction gates}	H10F30/28	H10F30/28		102
H10F30/288	10	{the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices}	H10F30/21	H10F30/28		365
H10F30/289	10	{the devices being transparent or semi-transparent devices}	H10F30/21	H10F30/28		60
H10F30/29	9	the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation	H10F30/29	H10F30/29		1113
H10F30/292	10	Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors	H10F30/292	H10F30/292		99
H10F30/2925	11	{Li-compensated PIN gamma-ray detectors}	H10F30/292	H10F30/292		49
H10F30/295	10	Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors	H10F30/295	H10F30/295		119
H10F30/2955	11	{Shallow PN junction radiation detectors}	H10F30/295	H10F30/295		78
H10F30/298	10	the devices being characterised by field-effect operation, e.g. MIS type detectors	H10F30/298	H10F30/298		152
H10F30/301	8	{the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation}	H10F30/00	H10F30/301		431
H10F39/00	7	Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays<br><br><u>WARNING</u><br>Groups H10F39/00 and H10F39/10 are incomplete pending reclassification of documents from group H10F99/00. <br>Groups H10F99/00, H10F39/00 and H10F39/10 should be considered in order to perform a complete search.	H10F39/00	H10F39/00		19
H10F39/011	8	{Manufacture or treatment of image sensors covered by group H10F39/12}	H10F39/00	H10F39/011		3655
H10F39/014	9	{of CMOS image sensors}	H10F39/00	H10F39/014		4352
H10F39/016	9	{of thin-film-based image sensors}	H10F39/00	H10F39/016		907
H10F39/018	9	{of hybrid image sensors}	H10F39/00	H10F39/018		1756
H10F39/021	9	{of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP}	H10F39/00	H10F39/021		233
H10F39/022	9	{of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe}	H10F39/00	H10F39/022		180
H10F39/024	9	{of coatings or optical elements}	H10F39/00	H10F39/024		5229
H10F39/026	9	{Wafer-level processing}	H10F39/00	H10F39/026		3425
H10F39/028	9	{performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation}	H10F39/00	H10F39/028		526
H10F39/10	8	Integrated devices	H10F39/10	H10F39/10		548
H10F39/103	9	{the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}	H10F39/10	H10F39/10		1558
H10F39/107	9	{having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays}	H10F39/10	H10F39/10		1494
H10F39/12	9	Image sensors	H10F39/12	H10F39/12		5859
H10F39/15	10	Charge-coupled device [CCD] image sensors	H10F39/15	H10F39/15		715
H10F39/151	11	{Geometry or disposition of pixel elements, address lines or gate electrodes}	H10F39/15	H10F39/15		764
H10F39/1515	12	{Optical shielding}	H10F39/15	H10F39/15		245
H10F39/152	11	{One-dimensional array CCD image sensors}	H10F39/15	H10F39/15		276
H10F39/153	11	{Two-dimensional or three-dimensional array CCD image sensors}	H10F39/15	H10F39/15		1186
H10F39/1532	12	{Frame-interline transfer}	H10F39/15	H10F39/15		56
H10F39/1534	12	{Interline transfer}	H10F39/15	H10F39/15		300
H10F39/1536	12	{Frame transfer}	H10F39/15	H10F39/15		129
H10F39/1538	12	{Time-delay and integration}	H10F39/15	H10F39/15		110
H10F39/154	11	{Charge-injection device [CID] image sensors (H10F39/156, H10F39/157 take precedence)}	H10F39/15	H10F39/15		87
H10F39/156	11	{CCD or CID colour image sensors}	H10F39/15	H10F39/15		246
H10F39/157	11	{CCD or CID infrared image sensors}	H10F39/15	H10F39/15		194
H10F39/1575	12	{of the hybrid type}	H10F39/15	H10F39/15		168
H10F39/158	11	{having arrangements for blooming suppression}	H10F39/15	H10F39/15		637
H10F39/159	11	{comprising a photoconductive layer deposited on the CCD structure}	H10F39/15	H10F39/15		26
H10F39/18	10	Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors	H10F39/18	H10F39/18		7930
H10F39/182	11	{Colour image sensors}	H10F39/18	H10F39/18		3193
H10F39/1825	12	{Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}	H10F39/18	H10F39/18		779
H10F39/184	11	{Infrared image sensors}	H10F39/18	H10F39/18		1343
H10F39/1843	12	{of the hybrid type}	H10F39/18	H10F39/18		315
H10F39/1847	12	{Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}	H10F39/18	H10F39/18		261
H10F39/186	11	{having arrangements for blooming suppression}	H10F39/18	H10F39/18		315
H10F39/1865	12	{Overflow drain structures}	H10F39/18	H10F39/18		286
H10F39/189	11	{X-ray, gamma-ray or corpuscular radiation imagers}	H10F39/18	H10F39/18		833
H10F39/1892	12	{Direct radiation image sensors}	H10F39/18	H10F39/18		296
H10F39/1895	12	{of the hybrid type}	H10F39/18	H10F39/18		211
H10F39/1898	12	{Indirect radiation image sensors, e.g. using luminescent members}	H10F39/18	H10F39/18		920
H10F39/191	10	{Photoconductor image sensors}	H10F39/12	H10F39/191		1543
H10F39/192	11	{Colour image sensors}	H10F39/12	H10F39/192		249
H10F39/193	11	{Infrared image sensors}	H10F39/12	H10F39/193		326
H10F39/1935	12	{of the hybrid type}	H10F39/12	H10F39/1935		84
H10F39/194	11	{having arrangements for blooming suppression}	H10F39/12	H10F39/194		67
H10F39/1945	12	{Overflow drain structures}	H10F39/12	H10F39/1945		14
H10F39/195	11	{X-ray, gamma-ray or corpuscular radiation imagers}	H10F39/12	H10F39/195		610
H10F39/196	10	{Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors}	H10F39/12	H10F39/196		240
H10F39/197	10	{Bipolar transistor image sensors}	H10F39/12	H10F39/197		254
H10F39/198	10	{Contact-type image sensors [CIS]}	H10F39/12	H10F39/198		766
H10F39/199	10	{Back-illuminated image sensors}	H10F39/12	H10F39/199		3989
H10F39/80	8	{Constructional details of image sensors}<br><br><u>WARNING</u><br>Group H10F39/80 is impacted by reclassification into groups H10F39/802, H10F39/8023, H10F39/8027, H10F39/803, H10F39/8033, H10F39/8037, H10F39/80373, H10F39/80377, H10F39/804, H10F39/805, H10F39/8053, H10F39/8057, H10F39/806, H10F39/8063, H10F39/8067, H10F39/807, H10F39/809, H10F39/811, H10F39/812 and H10F39/813. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F39/00	H10F39/80		2334
H10F39/802	9	{Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}<br><br><u>WARNING</u><br>Groups H10F39/802 - H10F39/8027 are incomplete pending reclassification of documents from group H10F39/80. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F39/00	H10F39/802		4556
H10F39/8023	10	{Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}	H10F39/00	H10F39/8023		2211
H10F39/8027	10	{Geometry of the photosensitive area}	H10F39/00	H10F39/8027		1271
H10F39/803	9	{Pixels having integrated switching, control, storage or amplification elements}<br><br><u>WARNING</u><br>Groups H10F39/803 - H10F39/80377 are incomplete pending reclassification of documents from group H10F39/80. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F39/00	H10F39/803		4345
H10F39/8033	10	{Photosensitive area}	H10F39/00	H10F39/8033		2099
H10F39/8037	10	{the integrated elements comprising a transistor}	H10F39/00	H10F39/8037		3730
H10F39/80373	11	{characterised by the gate of the transistor}	H10F39/00	H10F39/80373		1462
H10F39/80377	11	{characterised by the channel of the transistor, e.g. channel having a doping gradient}	H10F39/00	H10F39/80377		741
H10F39/804	9	{Containers or encapsulations}<br><br><u>WARNING</u><br>Group H10F39/804 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/804 should be considered in order to perform a complete search.	H10F39/00	H10F39/804		4887
H10F39/805	9	{Coatings}<br><br><u>WARNING</u><br>Groups H10F39/805 - H10F39/8057 are incomplete pending reclassification of documents from group H10F39/80. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F39/00	H10F39/805		2456
H10F39/8053	10	{Colour filters}	H10F39/00	H10F39/8053		6524
H10F39/8057	10	{Optical shielding}	H10F39/00	H10F39/8057		3553
H10F39/806	9	{Optical elements or arrangements associated with the image sensors}<br><br><u>WARNING</u><br>Groups H10F39/806 - H10F39/8067 are incomplete pending reclassification of documents from group H10F39/80.<br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F39/00	H10F39/806		4504
H10F39/8063	10	{Microlenses}	H10F39/00	H10F39/8063		6959
H10F39/8067	10	{Reflectors}	H10F39/00	H10F39/8067		1626
H10F39/807	9	{Pixel isolation structures}<br><br><u>WARNING</u><br>Group H10F39/807 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/807 should be considered in order to perform a complete search.	H10F39/00	H10F39/807		4958
H10F39/809	9	{of hybrid image sensors}<br><br><u>WARNING</u><br>Group H10F39/809 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/809 should be considered in order to perform a complete search.	H10F39/00	H10F39/809		3359
H10F39/811	9	{Interconnections}<br><br><u>WARNING</u><br>Group H10F39/811 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/811 should be considered in order to perform a complete search.	H10F39/00	H10F39/811		6766
H10F39/812	9	{Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region}<br><br><u>WARNING</u><br>Group H10F39/812 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/812 should be considered in order to perform a complete search.	H10F39/00	H10F39/812		472
H10F39/813	9	{Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}<br><br><u>WARNING</u><br>Group H10F39/813 is incomplete pending reclassification of documents from group H10F39/80. <br>Groups H10F39/80 and H10F39/813 should be considered in order to perform a complete search.	H10F39/00	H10F39/813		1579
H10F39/90	8	Assemblies of multiple devices<br><br><u>WARNING</u><br>Groups H10F39/90 and H10F39/95 are incomplete pending reclassification of documents from group H10W90/00. <br>Groups H10W90/00, H10F39/90 and H10F39/95 should be considered in order to perform a complete search.	H10F39/90	H10F39/90		40
H10F39/95	9	comprising at least one integrated device covered by group H10F39/10, e.g. comprising integrated image sensors	H10F39/95	H10F39/95		66
H10F55/00	7	Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto	H10F55/00	H10F55/00		998
H10F55/10	8	wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices	H10F55/10	H10F55/10		377
H10F55/15	9	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices	H10F55/15	H10F55/15		101
H10F55/155	10	formed in, or on, a common substrate	H10F55/155	H10F55/155		261
H10F55/16	9	{wherein the radiation-sensitive semiconductor devices have no potential barriers}	H10F55/10	H10F55/16		22
H10F55/165	10	{wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes}	H10F55/10	H10F55/165		44
H10F55/17	9	{wherein the radiation-sensitive semiconductor devices have potential barriers}	H10F55/10	H10F55/17		64
H10F55/18	8	{wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection}	H10F55/00	H10F55/18		580
H10F55/20	8	wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers	H10F55/20	H10F55/20		455
H10F55/205	9	{wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors}	H10F55/20	H10F55/20		32
H10F55/207	10	{wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes}	H10F55/20	H10F55/20		77
H10F55/208	10	{Optical potentiometers}	H10F55/20	H10F55/20		42
H10F55/25	9	wherein the radiation-sensitive devices and the electric light source are all semiconductor devices	H10F55/25	H10F55/25		843
H10F55/255	10	formed in, or on, a common substrate	H10F55/255	H10F55/255		674
H10F55/26	9	{wherein the radiation-sensitive semiconductor devices have potential barriers}	H10F55/20	H10F55/26		73
H10F71/00	7	Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)<br><br><u>WARNING</u><br>Group H10F71/00 is impacted by reclassification into groups H10F71/128, H10F71/129, H10F71/131, H10F71/132, H10F71/133, H10F71/134, H10F71/135 and H10F71/136. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F71/00	H10F71/00		19497
H10F71/10	8	the devices comprising amorphous semiconductor material<br><br><u>WARNING</u><br>Group H10F71/10 is impacted by reclassification into groups H10F71/103, H10F71/1035, H10F71/107, H10F71/128, H10F71/129, H10F71/131, H10F71/132, H10F71/133, H10F71/134, H10F71/135, H10F71/136, H10F71/137, H10F71/1375, H10F71/138, H10F71/1385, H10F71/139 and H10F71/1395. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F71/10	H10F71/10		839
H10F71/103	9	{including only Group IV materials}<br><br><u>WARNING</u><br>Groups H10F71/103 and H10F71/1035 are incomplete pending reclassification of documents from group H10F71/10. <br>Groups H10F71/10, H10F71/103 and H10F71/1035 should be considered in order to perform a complete search.	H10F71/10	H10F71/10		2313
H10F71/1035	10	{having multiple Group IV elements, e.g. SiGe or SiC}	H10F71/10	H10F71/10		269
H10F71/107	9	{Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition}<br><br><u>WARNING</u><br>Group H10F71/107 is incomplete pending reclassification of documents from group H10F71/10. <br>Groups H10F71/10 and H10F71/107 should be considered in order to perform a complete search.	H10F71/10	H10F71/10		446
H10F71/121	8	{The active layers comprising only Group IV materials}	H10F71/00	H10F71/121		10160
H10F71/1212	9	{consisting of germanium}	H10F71/00	H10F71/1212		352
H10F71/1215	9	{comprising at least two Group IV elements, e.g. SiGe}	H10F71/00	H10F71/1215		420
H10F71/1218	10	{in microcrystalline form}	H10F71/00	H10F71/1218		70
H10F71/1221	9	{comprising polycrystalline silicon}	H10F71/00	H10F71/1221		1114
H10F71/1224	9	{comprising microcrystalline silicon}	H10F71/00	H10F71/1224		302
H10F71/125	8	{The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe}	H10F71/00	H10F71/125		970
H10F71/1253	9	{comprising at least three elements, e.g. HgCdTe}	H10F71/00	H10F71/1253		565
H10F71/1257	9	{comprising growth substrates not made of Group II-VI materials}	H10F71/00	H10F71/1257		517
H10F71/127	8	{The active layers comprising only Group III-V materials, e.g. GaAs or InP}	H10F71/00	H10F71/127		938
H10F71/1272	9	{comprising at least three elements, e.g. GaAlAs or InGaAsP}	H10F71/00	H10F71/1272		1187
H10F71/1274	10	{comprising nitrides, e.g. InGaN or InGaAlN}	H10F71/00	H10F71/1274		404
H10F71/1276	9	{comprising growth substrates not made of Group III-V materials}	H10F71/00	H10F71/1276		710
H10F71/1278	9	{comprising nitrides, e.g. GaN}	H10F71/00	H10F71/1278		354
H10F71/128	8	{Annealing}<br><br><u>WARNING</u><br>Group H10F71/128 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/128 should be considered in order to perform a complete search.	H10F71/00	H10F71/128		2214
H10F71/129	8	{Passivating}<br><br><u>WARNING</u><br>Group H10F71/129 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/129 should be considered in order to perform a complete search.	H10F71/00	H10F71/129		3198
H10F71/131	8	{Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors}<br><br><u>WARNING</u><br>Group H10F71/131 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/131 should be considered in order to perform a complete search.	H10F71/00	H10F71/131		386
H10F71/132	8	{Gettering}<br><br><u>WARNING</u><br>Group H10F71/132 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/132 should be considered in order to perform a complete search.	H10F71/00	H10F71/132		5
H10F71/133	8	{Providing edge isolation}<br><br><u>WARNING</u><br>Group H10F71/133 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/133 should be considered in order to perform a complete search.	H10F71/00	H10F71/133		103
H10F71/134	8	{Irradiation with electromagnetic or particle radiation}<br><br><u>WARNING</u><br>Group H10F71/134 is incomplete pending reclassification of documents from group H10F71/00. <br>Groups H10F71/00 and H10F71/134 should be considered in order to perform a complete search.	H10F71/00	H10F71/134		207
H10F71/135	8	{Application of a bias; Current injection}<br><br><u>WARNING</u><br>Group H10F71/135 is incomplete pending reclassification of documents from groups H10F71/00 and H10F71/10. <br>Groups H10F71/00, H10F71/10 and H10F71/135 should be considered in order to perform a complete search.	H10F71/00	H10F71/135		35
H10F71/136	8	{Singulating, e.g. dicing}<br><br><u>WARNING</u><br>Group H10F71/136 is incomplete pending reclassification of documents from group H10F71/00. <br>Groups H10F71/00 and H10F71/136 should be considered in order to perform a complete search.	H10F71/00	H10F71/136		82
H10F71/137	8	{Batch treatment of the devices}<br><br><u>WARNING</u><br>Groups H10F71/137 and H10F71/1375 are incomplete pending reclassification of documents from group H10F71/10. <br>Groups H10F71/10, H10F71/137 and H10F71/1375 should be considered in order to perform a complete search.	H10F71/00	H10F71/137		3345
H10F71/1375	9	{Apparatus for automatic interconnection of photovoltaic cells in a module}	H10F71/00	H10F71/1375		1756
H10F71/138	8	{Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}<br><br><u>WARNING</u><br>Groups H10F71/138 and H10F71/1385 are incomplete pending reclassification of documents from group H10F71/10. <br>Groups H10F71/10, H10F71/138 and H10F71/1385 should be considered in order to perform a complete search.	H10F71/00	H10F71/138		2585
H10F71/1385	9	{Etching transparent electrodes}	H10F71/00	H10F71/1385		204
H10F71/139	8	{using temporary substrates}<br><br><u>WARNING</u><br>Groups H10F71/139 and H10F71/1395 are incomplete pending reclassification of documents from group H10F71/10. <br>Groups H10F71/10, H10F71/139 and H10F71/1395 should be considered in order to perform a complete search.	H10F71/00	H10F71/139		813
H10F71/1395	9	{for thin-film devices}	H10F71/00	H10F71/1395		457
H10F77/00	7	Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)<br><br><u>NOTE</u><br><br>When classifying in this group, the type of device itself, when it is determined to be novel and nonobvious, should be classified in groups H10F10/00, H10F19/00, H10F30/00 or H10F55/00.	H10F77/00	H10F77/00		1164
H10F77/10	8	Semiconductor bodies	H10F77/10	H10F77/10		127
H10F77/12	9	Active materials<br><br><u>NOTE</u><br><br>When classifying in this group, constituents of a material are considered irrespective of any dopants or other impurities.	H10F77/12	H10F77/12		3623
H10F77/121	10	comprising only selenium or only tellurium	H10F77/121	H10F77/121		229
H10F77/1215	11	{characterised by the dopants}	H10F77/121	H10F77/121		31
H10F77/122	10	comprising only Group IV materials	H10F77/122	H10F77/122		1899
H10F77/1223	11	characterised by the dopants	H10F77/1223	H10F77/1223		833
H10F77/1226	11	comprising multiple Group IV elements, e.g. SiC	H10F77/1226	H10F77/1226		295
H10F77/1227	12	{characterised by the dopants}	H10F77/1226	H10F77/122		53
H10F77/1228	11	{porous silicon}	H10F77/122	H10F77/122		105
H10F77/123	10	comprising only Group II-VI&#160;materials, e.g. CdS, ZnS or HgCdTe	H10F77/123	H10F77/123		907
H10F77/1233	11	{characterised by the dopants}	H10F77/123	H10F77/123		251
H10F77/1237	11	{having at least three elements, e.g. HgCdTe}	H10F77/123	H10F77/123		448
H10F77/124	10	comprising only Group III-V materials, e.g. GaAs	H10F77/124	H10F77/124		831
H10F77/1243	11	{characterised by the dopants}	H10F77/124	H10F77/124		368
H10F77/1246	11	{III-V nitrides, e.g. GaN}	H10F77/124	H10F77/124		463
H10F77/1248	11	{having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}	H10F77/124	H10F77/124		1513
H10F77/12485	12	{comprising nitride compounds, e.g. InGaN}	H10F77/124	H10F77/124		422
H10F77/126	10	{comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}	H10F77/12	H10F77/12		2179
H10F77/1265	11	{characterised by the dopants}	H10F77/12	H10F77/12		136
H10F77/127	10	{comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe}	H10F77/12	H10F77/12		452
H10F77/1275	11	{characterised by the dopants}	H10F77/12	H10F77/12		20
H10F77/128	10	{comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4}	H10F77/12	H10F77/12		477
H10F77/1285	11	{characterised by the dopants}	H10F77/12	H10F77/12		46
H10F77/14	9	Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies	H10F77/14	H10F77/14		3035
H10F77/143	10	{comprising quantum structures}	H10F77/14	H10F77/14		456
H10F77/1433	11	{Quantum dots}	H10F77/14	H10F77/14		1080
H10F77/1437	11	{Quantum wires or nanorods}	H10F77/14	H10F77/14		735
H10F77/146	10	{Superlattices; Multiple quantum well structures}	H10F77/14	H10F77/14		1362
H10F77/1462	11	{comprising amorphous semiconductor layers}	H10F77/14	H10F77/14		54
H10F77/1465	11	{including only Group IV materials, e.g. Si-SiGe superlattices}	H10F77/14	H10F77/14		129
H10F77/1468	11	{Doped superlattices, e.g. N-I-P-I superlattices}	H10F77/14	H10F77/14		112
H10F77/147	10	{Shapes of bodies}	H10F77/14	H10F77/14		2491
H10F77/148	10	{Shapes of potential barriers}	H10F77/14	H10F77/14		1544
H10F77/16	9	Material structures, e.g. crystalline structures, film structures or crystal plane orientations	H10F77/16	H10F77/16		617
H10F77/162	10	Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials (H10F77/169 takes precedence)	H10F77/162	H10F77/162		227
H10F77/1625	11	{Semiconductor nanoparticles embedded in semiconductor matrix}	H10F77/162	H10F77/162		104
H10F77/164	11	Polycrystalline semiconductors	H10F77/164	H10F77/164		258
H10F77/1642	12	{including only Group IV materials}	H10F77/164	H10F77/164		537
H10F77/1645	13	{including microcrystalline silicon}	H10F77/164	H10F77/164		304
H10F77/1648	13	{including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe}	H10F77/164	H10F77/164		54
H10F77/166	11	Amorphous semiconductors	H10F77/166	H10F77/166		349
H10F77/1662	12	{including only Group IV materials}	H10F77/166	H10F77/166		687
H10F77/1665	13	{including Group IV-IV materials, e.g. SiGe or SiC}	H10F77/166	H10F77/166		103
H10F77/1668	13	{presenting light-induced characteristic variations, e.g. Staebler-Wronski effect}	H10F77/166	H10F77/166		77
H10F77/169	10	Thin semiconductor films on metallic or insulating substrates	H10F77/169	H10F77/169		1843
H10F77/1692	11	{the films including only Group IV materials}	H10F77/169	H10F77/169		987
H10F77/1694	11	{the films including Group I-III-VI materials, e.g. CIS or CIGS}	H10F77/169	H10F77/169		983
H10F77/1696	11	{the films including Group II-VI materials, e.g. CdTe or CdS}	H10F77/169	H10F77/169		539
H10F77/1698	11	{the metallic or insulating substrates being flexible}	H10F77/169	H10F77/169		839
H10F77/1699	12	{the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils}	H10F77/169	H10F77/169		418
H10F77/20	8	Electrodes	H10F77/20	H10F77/20		2344
H10F77/206	9	{for devices having potential barriers}	H10F77/20	H10F77/20		2253
H10F77/211	10	{for photovoltaic cells}	H10F77/20	H10F77/211		9656
H10F77/215	11	{Geometries of grid contacts}	H10F77/20	H10F77/215		2453
H10F77/219	11	{Arrangements for electrodes of back-contact photovoltaic cells}	H10F77/20	H10F77/219		3277
H10F77/223	12	{for metallisation wrap-through [MWT] photovoltaic cells}	H10F77/20	H10F77/223		498
H10F77/227	12	{for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts}	H10F77/20	H10F77/227		336
H10F77/241	10	{comprising ring electrodes}	H10F77/20	H10F77/241		258
H10F77/244	9	{made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}	H10F77/20	H10F77/244		3352
H10F77/247	10	{comprising indium tin oxide [ITO]}	H10F77/20	H10F77/247		782
H10F77/251	10	{comprising zinc oxide [ZnO]}	H10F77/20	H10F77/251		786
H10F77/254	10	{comprising a metal, e.g. transparent gold}	H10F77/20	H10F77/254		186
H10F77/30	8	Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80)	H10F77/30	H10F77/30		966
H10F77/306	9	{for devices having potential barriers}	H10F77/30	H10F77/30		1454
H10F77/311	10	{for photovoltaic cells}	H10F77/30	H10F77/311		5281
H10F77/315	11	{the coatings being antireflective or having enhancing optical properties}	H10F77/30	H10F77/315		4027
H10F77/331	10	{for filtering or shielding light, e.g. multicolour filters for photodetectors}	H10F77/30	H10F77/331		1046
H10F77/334	11	{for shielding light, e.g. light blocking layers or cold shields for infrared detectors}	H10F77/30	H10F77/334		814
H10F77/337	11	{using interference filters, e.g. multilayer dielectric filters}	H10F77/30	H10F77/337		325
H10F77/40	8	Optical elements or arrangements (surface textures H10F77/70)	H10F77/40	H10F77/40		1280
H10F77/407	9	{indirectly associated with the devices}	H10F77/40	H10F77/40		1417
H10F77/413	9	{directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}	H10F77/40	H10F77/413		3345
H10F77/42	9	directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means	H10F77/42	H10F77/42		1399
H10F77/45	10	Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements	H10F77/45	H10F77/45		1599
H10F77/48	10	Back surface reflectors [BSR]	H10F77/48	H10F77/48		1241
H10F77/484	10	{Refractive light-concentrating means, e.g. lenses}	H10F77/42	H10F77/48		2365
H10F77/488	10	{Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection}	H10F77/42	H10F77/48		4289
H10F77/492	10	{Spectrum-splitting means, e.g. dichroic mirrors}	H10F77/42	H10F77/492		384
H10F77/496	9	{Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45)}	H10F77/40	H10F77/496		497
H10F77/50	8	Encapsulations or containers (for photovoltaic modules H10F19/80)	H10F77/50	H10F77/50		4374
H10F77/60	8	Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations	H10F77/60	H10F77/60		787
H10F77/63	9	Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling	H10F77/63	H10F77/63		1475
H10F77/67	10	including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements	H10F77/67	H10F77/67		187
H10F77/68	10	{using gaseous or liquid coolants, e.g. air flow ventilation or water circulation}	H10F77/63	H10F77/68		916
H10F77/70	8	Surface textures, e.g. pyramid structures	H10F77/70	H10F77/70		1245
H10F77/703	9	{of the semiconductor bodies, e.g. textured active layers}	H10F77/70	H10F77/70		3157
H10F77/707	9	{of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate}	H10F77/70	H10F77/70		1976
H10F77/80	8	Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications	H10F77/80	H10F77/80		157
H10F77/90	8	Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells	H10F77/90	H10F77/90		225
H10F77/93	8	{Interconnections}	H10F77/00	H10F77/93		803
H10F77/933	9	{for devices having potential barriers}	H10F77/00	H10F77/933		936
H10F77/935	10	{for photovoltaic devices or modules}	H10F77/00	H10F77/935		1491
H10F77/937	11	{Busbar structures for modules}	H10F77/00	H10F77/937		958
H10F77/939	11	{Output lead wires or elements}	H10F77/00	H10F77/939		664
H10F77/95	8	{Circuit arrangements}	H10F77/00	H10F77/95		170
H10F77/953	9	{for devices having potential barriers}	H10F77/00	H10F77/953		521
H10F77/955	10	{for photovoltaic devices}	H10F77/00	H10F77/955		1577
H10F77/957	10	{for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes}	H10F77/00	H10F77/957		320
H10F77/959	10	{for devices working in avalanche mode}	H10F77/00	H10F77/959		482
H10F99/00	7	Subject matter not provided for in other groups of this subclass<br><br><u>WARNING</u><br>Group H10F99/00 is impacted by reclassification into groups H10F10/00, H10F19/00, H10F30/00, H10F39/00 and H10F39/10. <br>All groups listed in this Warning should be considered in order to perform a complete search.	H10F99/00	H10F99/00		2603
