G03F   1/00  \	0	0	2H195	G03F   1/00	647	եȥᥫ˥ˡˤ̲ϥѥ󲽤줿ɽ̤¤Ѥ븶ơ㡥ޥեȥޥϥ롨ΤΥޥ֥ϥڥꥯ롨äˤŬ礷ƴνΣ	Originals for&nbsp;photomechanical production of textured or patterned surfaces, e.g. masks,&nbsp;photo-masks or&nbsp;reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof [3,2012.01]
G03F   1/00  A	0	0	2H195	G03F   1/00	148	С	For barcode
G03F   1/00  B	0	0	2H195	G03F   1/00	139	ɡޥ	For shadow mask
G03F   1/00  C	0	0	2H195	G03F   1/00	198	ԣ֡ӥǥ	From TV and video images
G03F   1/00  D	0	0	2H195	G03F   1/00	258	ѥκ	Creation of pattern
G03F   1/00  E	0	0	2H195	G03F   1/00	461	ʡˤ	Creation by scanner
G03F   1/00  F	0	1	2H195	G03F   1/00	167	ʡϽ	Preparation for scanner input
G03F   1/00  G	0	1	2H195	G03F   1/00	45	Ψ¬	Measuring the scaling factor
G03F   1/00  H	0	1	2H195	G03F   1/00	2130	ʡ	Details of scanners
G03F   1/00  J	0	1	2H195	G03F   1/00	20	ɥ	Drum
G03F   1/00  K	0	1	2H195	G03F   1/00	178	ɥؤθƼ	Setting the document on the drum
G03F   1/00  L	0	0	2H195	G03F   1/00	490	ԥ塼ˤ	Image processing by computer
G03F   1/00  M	0	1	2H195	G03F   1/00	290	쥤Ƚ	Layout proccesing
G03F   1/00  N	0	1	2H195	G03F   1/00	185	ȥߥ󥰽	Trimming
G03F   1/00  P	0	0	2H195	G03F   1/00	1049	ѷ	Image deformation
G03F   1/00  Q	0	0	2H195	G03F   1/00	34	硢̾	Image enlargement and reduction
G03F   1/00  R	0	0	2H195	G03F   1/00	56	å	Edge processing
G03F   1/00  S	0	0	2H195	G03F   1/00	1432		Bordering
G03F   1/00  T	0	0	2H195	G03F   1/00	186	ȴޥκ	Creation of drawn masks
G03F   1/00  V	0	0	2H195	G03F   1/00	3082	Ƥθ	Inspection of  documents
G03F   1/00  W	0	1	2H195	G03F   1/00	952		Inspection of plates
G03F   1/00  X	0	1	2H195	G03F   1/00	877	ڡθ	Inspection of page layout
G03F   1/00  Y	0	0	2H195	G03F   1/00	983	Ƥν	Correction of documents
G03F   1/00  Z	0	0	2H195	G03F   1/00	2469	¾Τ	Others
G03F   1/20  \	1	1	2H195	G03F   1/20	1035	γΣãУ¡Ϥ͡㡥ŻˤäƲ뤿Υޥϥޥ֥󥯡νΣ	Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof [2012.01]
G03F   1/22  \	1	1	2H195	G03F   1/22	1269	ʲĹͤˤäƲ뤿Υޥϥޥ֥󥯡㡥ޥü糰Σţգ֡ϥޥνΣ	Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof [2012.01]
G03F   1/24  \	2	2	2H195	G03F   1/24	2188	ȿͥޥνΣ	Reflection masks; Preparation thereof [2012.01]
G03F   1/26  \	1	1	2H195	G03F   1/26	455	ꥷեȥޥΣУӣ͡ϡУӣ֥ͥ󥯡νΣ	Phase shift masks [PSM]; PSM blanks; Preparation thereof [2012.01]
G03F   1/28  \	2	2	2H195	G03F   1/28	136	ƱΣУӣ;ˣʾΰꡨνΣ	with three or more diverse phases on the same PSM; Preparation thereof [2012.01]
G03F   1/29  \	2	2	2H195	G03F   1/29	526	УӣϥȥꥬУӣ͡νΣ	Rim PSM or outrigger PSM; Preparation thereof [2012.01]
G03F   1/30  \	2	2	2H195	G03F   1/30	877	ߣУӣ͡㡥ë٥󥽥Уӣ͡νΣ	Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof [2012.01]
G03F   1/32  \	2	2	2H195	G03F   1/32	1725	Уӣ͡ΣݣУӣ͡ϡ㡥ϡեȡУӣȾƩʰꥷեͭУӣ͡νΣ	Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof [2012.01]
G03F   1/34  \	2	2	2H195	G03F   1/34	228	եåУӣ͡㡥쥹Уӣ͡νΣ	Phase-edge PSM, e.g. chromeless PSM; Preparation thereof [2012.01]
G03F   1/36  \	1	1	2H195	G03F   1/36	1523	ܸħͭޥν㡥ܸΣϣУáϥǥץΣ	Masks having&nbsp;proximity correction&nbsp;features; Preparation thereof, e.g. optical proximity correction [OPC] design processes [2012.01]
G03F   1/38  \	1	1	2H195	G03F   1/38	910	Ūħͭޥ㡥̤ʥƥϥ饤ȼ㤷ϻΤΥޡνΣ	Masks having auxiliary features, e.g. special coatings or marks&nbsp;for alignment or&nbsp;testing; Preparation thereof [2012.01]
G03F   1/40  \	2	2	2H195	G03F   1/40	387	šΣţӣġϤ˴Ϣħ㡥ɻߥƥϥޥĤμϤƳ°ءΣ	Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate [2012.01]
G03F   1/42  \	2	2	2H195	G03F   1/42	547	饤ϽŤ͹碌ʥ쥸ȥ졼ˤħ㡥ޥľΥ饤ȥޡΣ	Alignment or registration features, e.g. alignment marks on the mask substrates [2012.01]
G03F   1/44  \	2	2	2H195	G03F   1/44	397	¬ħ㡥ʻҥѥ󡤥ե˥ΤϥΥåΣ	Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales&nbsp; [2012.01]
G03F   1/46  \	2	2	2H195	G03F   1/46	248	ȿɻߥƥ󥰡Σ	Antireflective coatings [2012.01]
G03F   1/48  \	2	2	2H195	G03F   1/48	434	ݸƥ󥰡Σ	Protective coatings [2012.01]
G03F   1/50  \	1	1	2H195	G03F   1/50	726	롼ףǣƣǣƣޤʤޥ֥󥯡νΣ	Mask blanks not covered by groups G03F 1/20-G03F 1/26; Preparation thereof [2012.01]
G03F   1/52  \	1	1	2H195	G03F   1/52	127	ȿͺΣ	Reflectors [2012.01]
G03F   1/54  \	1	1	2H195	G03F   1/54	2025	ۼࡤ㡥ƩʺΣ	Absorbers, e.g. opaque materials [2012.01]
G03F   1/56  \	2	2	2H195	G03F   1/56	277	ͭŪʵۼࡤ㡥եȥ쥸ȡΣ	Organic absorbers, e.g. photo-resists [2012.01]
G03F   1/58  \	2	2	2H195	G03F   1/58	541	İʾΰۤʤۼء㡥ؤ줿ʣؤεۼΣ	having two or more different absorber layers, e.g. stacked multilayer absorbers [2012.01]
G03F   1/60  \	1	1	2H195	G03F   1/60	1209	ġΣ	Substrates [2012.01]
G03F   1/62  \	1	1	2H195	G03F   1/62	1384	ڥꥯϥڥꥯ빽¤Ρ㡥ٻե졼ΡνΣ	Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof [2012.01]
G03F   1/64  \	2	2	2H195	G03F   1/64	615	Υե졼ħΤΡ㡥ι¤ϺΣ	characterised by the&nbsp;frames, e.g. structure or material thereof [2012.01]
G03F   1/66  \	1	1	2H195	G03F   1/66	725	ƴä˥ޥޥ֥ϥڥꥯŬ礹ΡνΣ	Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof [2012.01]
G03F   1/68  \	1	1	2H195	G03F   1/68	627	롼ףǣƣǣƣޤʤץΣ	Preparation processes not covered by groups G03F 1/20-G03F 1/50 [2012.01]
G03F   1/70  \	2	2	2H195	G03F   1/70	1336	ޥδŪ쥤ϥǥ꥽եץ׵Ŭ礵뤳ȡ㡥ΤΥޥѥκƽΣ	Adapting basic layout or design of masks to lithographic process requirements, e.g.&nbsp;second iteration correction of mask patterns for imaging [2012.01]
G03F   1/72  \	2	2	2H195	G03F   1/72	807	ޥ٤νϽΣ	Repair or correction of mask defects [2012.01]
G03F   1/74  \	3	3	2H195	G03F   1/74	520	γΣãУ¡ϡ㡥«ӡࡤˤΡΣ	by charged particle beam [CPB], e.g. focused ion beam [2012.01]
G03F   1/76  \	2	2	2H195	G03F   1/76	701	ˤޥΥѥΣ	Patterning of masks by imaging [2012.01]
G03F   1/78  \	3	3	2H195	G03F   1/78	305	γΣãУ¡ϡ㡥ŻˤΡΣ	by charged particle beam [CPB], e.g. electron beam [2012.01]
G03F   1/80  \	2	2	2H195	G03F   1/80	1708	å󥰡Σ	Etching [2012.01]
G03F   1/82  \	2	2	2H195	G03F   1/82	944	Ūʥץ㡥꡼˥󥰡Σ	Auxiliary processes, e.g. cleaning [2012.01]
G03F   1/84  \	3	3	2H195	G03F   1/84	2903	Σ	Inspecting [2012.01]
G03F   1/86  \	4	4	2H195	G03F   1/86	287	γΣãУ¡ϤˤΡΣ	by charged particle beam [CPB] [2012.01]
G03F   1/88  \	1	1	2H195	G03F   1/88	406	꡼վƺΤ˼̿ץˤäƽ줿ΡΣ	prepared by photographic processes for producing originals simulating relief [2012.01]
G03F   1/90  \	1	1	2H195	G03F   1/90	905	󥿡ץˤäƽ줿ΡΣ	prepared by montage processes [2012.01]
G03F   1/92  \	1	1	2H195	G03F   1/92	7	ɽ̤줿ΡΣ	prepared from printing surfaces [2012.01]
G03F   1/92  A	1	0	2H195	G03F   1/92	74	깩ˤ	Retouching
G03F   1/92  B	1	1	2H195	G03F   1/92	17		using pressure sensitive materials
G03F   1/92  C	1	1	2H195	G03F   1/92	81	Ǯ	using heat sensitive materials
G03F   1/92  D	1	1	2H195	G03F   1/92	83	쥤ȥơ֥	Lay-out tables
G03F   1/92  E	1	1	2H195	G03F   1/92	101	ŽѶ	Paste-up tools
G03F   1/92  F	1	1	2H195	G03F   1/92	129	쥤ȥ	Lay-out sheets
G03F   1/92  G	1	1	2H195	G03F   1/92	73	ŽǺ	Paste-up materials
G03F   1/92  H	1	1	2H195	G03F   1/92	279	ޥ󥰥ե	Masking films
G03F   1/92  Z	1	0	2H195	G03F   1/92	12	¾	Others
G03F   3/00  \	0	0	2H117	G03F   3/00	264	ʬ򡨿Ĵνʼ̿Ūʣְ̣ǣ¡	Colour separation; Correction of tonal value (photographic copying apparatus in general G03B)
G03F   3/02  \	1	1	2H117	G03F   3/02	15	깩ˤ	by retouching
G03F   3/04  \	1	1	2H117	G03F   3/04	47	̿Ūʤˤ	by photographic means
G03F   3/06  \	2	2	2H117	G03F   3/06	32	ޥ󥰤ˤ	by masking
G03F   3/08  \	1	1	2H117	G03F   3/08	1280	Ūʤˤ	by photoelectric means
G03F   3/10  \	1	1	2H117	G03F   3/10	1647	ʬͥޤϥݥοޤĴҤΥå	Checking the colour or tonal value of separation negatives or positives
G03F   5/00  \	0	0	2H117	G03F   5/00	871	꡼ˡΤΥ꡼	Screening processes; Screens therefor
G03F   5/02  \	1	1	2H117	G03F   5/02	39	ˡˤΡʥǣ¡	by projecting methods (cameras G03B)
G03F   5/04  \	2	2	2H117	G03F   5/04	6	ֳݤ̤Ѳˤ	changing the screen effect
G03F   5/06  \	2	2	2H117	G03F   5/06	2	ʤ̤Ѳˤ	changing the diaphragm effect
G03F   5/08  \	2	2	2H117	G03F   5/08	5	ʿ꡼λ	using line screens
G03F   5/10  \	2	2	2H117	G03F   5/10	8	꡼λ	using cross-line screens
G03F   5/12  \	2	2	2H117	G03F   5/12	37	¾Υ꡼㡥ܥ꡼󡤤λ	using other screens, e.g. granulated screen
G03F   5/14  \	1	1	2H117	G03F   5/14	96	̩ˡˤ	by contact methods
G03F   5/16  \	2	2	2H117	G03F   5/16	54	Ĵ꡼λ	using grey half-tone screens
G03F   5/18  \	2	2	2H117	G03F   5/18	9	顼Ĵ꡼λ	using colour half-tone screens
G03F   5/20  \	1	1	2H117	G03F   5/20	126	ӥֳݤλ	using screens for gravure printing
G03F   5/22  \	1	1	2H117	G03F   5/22	88	Υ꡼ȹ礻ˡ⥢ν	combining several screens; Elimination of moire
G03F   5/24  \	1	1	2H117	G03F   5/24	21	¿Ϫ㡥̿ȥ꡼ȹ礻	by multiple exposure, e.g. combined processes for line photo and screen
G03F   7/00  \	0	0	2H196	G03F   7/00	1333	եȥᥫ˥ˡ㡥եȥ꥽ˡˤ̲ϥѥ󲽤줿ɽ̡㡥ɽ̡¤Τκ㡥եȥ쥸ȤʤΡΤäŬ礷̤֡¤ˡΤΥեȥ쥸ȹ¤ѤΡطսꡤ㡥£áȣУȣˡ򻲾ȡˡΣ	Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor   (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P0076000000, H05K)[2006.01]
G03F   7/00 501 \	1	1	2H196	G03F   7/00	898	Ϥκˡ	Printing plates or making thereof
G03F   7/00 502 \	2	2	2H196	G03F   7/00	1873		Relief printing
G03F   7/00 503 \	2	2	2H196	G03F   7/00	8023	ʿǡեå	Planographic printing or offset printing
G03F   7/00 504 \	3	3	2H196	G03F   7/00	1257	̵ʿǡ̵եå	Waterless planographic printing or waterless offset printing
G03F   7/00 505 \	2	2	2H196	G03F   7/00	538	ǡӥ	Intaglio printing or gravure printing
G03F   7/00 506 \	3	3	2H196	G03F   7/00	24	֥ӥ	Halftone gravure printing
G03F   7/004  \	1	1	2H225	G03F   7/004	1520	ʣǣƣǣƣͥˡΣ	Photosensitive materials (G03F 7/12, G03F 7/14 take precedence) [5]
G03F   7/004 501 \	2	2	2H225	G03F   7/004	16263	źúޡʣͥ	Additives (7/075 and 7/085 take precedence)
G03F   7/004 502 \	3	3	2H225	G03F   7/004	958	ޡŹɻߺ	Stabilisers or polymerisation inhibitors
G03F   7/004 503 \	3	3	2H225	G03F   7/004	1649	ޡʣͥ	Sensitisers (7/028 takes precedence)
G03F   7/004 503 A	3	0	2H225	G03F   7/004	6284	ѻȯ	Acid generators for chemically-amplified resists
G03F   7/004 503 B	3	0	2H225	G03F   7/004	273	ѱȯ	Base generators for chemically-amplified resists
G03F   7/004 503 Z	3	0	2H225	G03F   7/004	1866	¾	Others
G03F   7/004 504 \	3	3	2H225	G03F   7/004	2106	̳	Surfactants
G03F   7/004 505 \	3	3	2H225	G03F   7/004	9972	忧ޡʣͥ	Colourants (7/004 , 507 takes precedence)
G03F   7/004 506 \	4	4	2H225	G03F   7/004	502	ϥ졼ɻߺ	Anti-halation agents
G03F   7/004 507 \	3	3	2H225	G03F   7/004	858	ȯޡѿ	Colour formers or discolourants
G03F   7/004 511 \	2	2	2H225	G03F   7/004	712	ӤħͭΡʣͥ	characterised by applications (7/00, 501 takes precedence)
G03F   7/004 512 \	3	3	2H225	G03F   7/004	5402	ɥ饤ե	Dry film resists
G03F   7/004 513 \	3	3	2H225	G03F   7/004	748	Ǯž̡ž̤Ѥ	used for thermal or pressure transfer
G03F   7/004 514 \	4	4	2H225	G03F   7/004	1413	ޥץѤ	using microcapsules
G03F   7/004 515 \	3	3	2H225	G03F   7/004	176	ͥڤӥݥξѤ	used for both negative and positive working
G03F   7/004 521 \	2	2	2H225	G03F   7/004	1082	ϲʳʪ㡥ΨŪȿѲ	changing properties other than solubility, e.g. adhesiveness, refractivity and chemical reactivity
G03F   7/004 522 \	3	3	2H225	G03F   7/004	96	ǴѲ	changing adhesiveness or stickiness
G03F   7/004 523 \	4	4	2H225	G03F   7/004	102	ʴθ	for powder development
G03F   7/004 524 \	4	4	2H225	G03F   7/004	288	Υ	for peeling development
G03F   7/004 531 \	2	2	2H225	G03F   7/004	764	礵ʤʬҲʪ㡥˧²˥ȥʪʣͥ	Photosensitive low-molecular compounds not covered by groups 7/008 to 7/027, e.g. aromatic nitro compounds (7/004, 501 and 521 take precedence)
G03F   7/008  \	2	2	2H225	G03F   7/008	563	ɡʣǣƣͥˡΣ	Azides (G03F 7/075 takes precedence) [5]
G03F   7/012  \	3	3	2H225	G03F   7/012	392	ʬҥɡʬźúޡ㡥ޡΣ	Macromolecular azides; Macromolecular additives, e.g. binders [5]
G03F   7/012 501 \	4	4	2H225	G03F   7/012	55	ʬҥ	Macromolecular azides
G03F   7/012 511 \	4	4	2H225	G03F   7/012	21	ϥݥޡ㡥Ĳʣͥ	Diene based polymers, e.g. cyclised rubbers (501 takes precedence)
G03F   7/016  \	2	2	2H225	G03F   7/016	765	˥ϲʪʣǣƣͥˡΣ	Diazonium salts or compounds (G03F 7/075 takes precedence) [5]
G03F   7/016 501 \	3	3	2H225	G03F   7/016	35	ݥΤ	in positive resists
G03F   7/021  \	3	3	2H225	G03F   7/021	164	ʬҥ˥ಽʪʬźúޡ㡥ޡΣ	Macromolecular diazonium compounds; Macromolecular additives, e.g. binders [5]
G03F   7/021 501 \	4	4	2H225	G03F   7/021	343	ʬҥ˥ಽʪ㡥	Macromolecular diazonium compounds, e.g. diazo resins
G03F   7/021 511 \	4	4	2H225	G03F   7/021	42	ݥӥ˥륢륳롤ݥӥ˥륢륳ʣͥ	Polyvinyl alcohols or modified polyvinyl alcohols (501 takes precedence)
G03F   7/022  \	2	2	2H225	G03F   7/022	2209	Υ󥸥ɡʣǣƣͥˡΣ	Quinonediazides (G03F 7/075 takes precedence) [5]
G03F   7/022 501 \	3	3	2H225	G03F   7/022	46	ͥΤΡ㡥ݥΥ󥸥	in negative resisits, e.g. p-quinonediazides
G03F   7/022 601 \	3	3	2H225	G03F   7/022	857	ݥʬҥΥ󥸥ɤǡι¤ħ	Low-molecular quinonediazides, characterised by their structures, in positive working
G03F   7/023  \	3	3	2H225	G03F   7/023	2420	ʬҥΥ󥸥ɡʬźúޡ㡥ޡΣ	Macromolecular quinonediazides; Macromolecular additives, e.g. binders [5]
G03F   7/023 501 \	4	4	2H225	G03F   7/023	279	ʬҥΥ󥸥	Macromolecular quinonediazides
G03F   7/023 511 \	4	4	2H225	G03F   7/023	1089	եΡ顤Υܥåʣͥ	Phenolic resins or novolak resins (501 takes precedence)
G03F   7/025  \	2	2	2H225	G03F   7/025	53	úǡúǻŷͭʬҸŹʪ㡥󲽹ʪʣǣƣͥˡΣ	Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds (G03F 7/075 takes precedence) [5]
G03F   7/027  \	2	2	2H225	G03F   7/027	3730	úǡúŷͭʬҸŹʪ㡥󲽹ʪʣǣƣͥˡΣ	Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F 7/075 takes precedence) [5]
G03F   7/027 501 \	3	3	2H225	G03F   7/027	674	ĤΡʣͥ	having acryloyl groups (7/027, 511 to 515 take precedence)
G03F   7/027 502 \	4	4	2H225	G03F   7/027	5022	졼	Acrylates
G03F   7/027 503 \	4	4	2H225	G03F   7/027	136	륢ߥ	Acrylamides
G03F   7/027 504 \	3	3	2H225	G03F   7/027	72	̲㡥ʥ⥤𡤤ĤΡʣͥ	having photodimerisation groups, e.g. cinnamoyl groups (7/027, 511 to 515 take precedense)
G03F   7/027 511 \	3	3	2H225	G03F   7/027	723	ץݥޡ	Prepolymers
G03F   7/027 512 \	4	4	2H225	G03F   7/027	293	˰¥ݥꥨƥ	Unsaturated polyesters
G03F   7/027 513 \	4	4	2H225	G03F   7/027	1172	˰¥ݥꥦ쥿	Unsaturated polyurethanes
G03F   7/027 514 \	4	4	2H225	G03F   7/027	1217	˰´ͭݥꥢߥɡݥꥤߥϤ	Polyamides, polyimides or precursors thereof having unsaturated groups
G03F   7/027 515 \	4	4	2H225	G03F   7/027	2445	˰´ͭ륨ݥ	Epoxy resins with unsaturated groups
G03F   7/028  \	3	3	2H225	G03F   7/028	3249	ʪĤΡ㡥Ź糫ϺޡΣ	with photosensitivity-increasing substances, e.g. photoinitiators [5]
G03F   7/029  \	4	4	2H225	G03F   7/029	2854	̵ʪ˥ಽʪǡβʳΰۼ︶ҤͭʪΣ	Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur [5]
G03F   7/031  \	4	4	2H225	G03F   7/031	4006	롼ףǣƣޤʤͭʪΣ	Organic compounds not covered by group G03F 7/029 [5]
G03F   7/032  \	3	3	2H225	G03F   7/032	1794	ޤĤΡΣ	with binders [5]
G03F   7/032 501 \	4	4	2H225	G03F   7/032	688	ݥʣͥ	the binders being epoxy resins (7/027, 515 takes precedence)
G03F   7/032 502 \	4	4	2H225	G03F   7/032	268	ݥꥨƥʣͥ	the binders being polyester resins (7/027, 512 takes precedence)
G03F   7/033  \	4	4	2H225	G03F   7/033	4541	ޤúǡú˰·ޤȿΤߤˤä줿ŹΤǤΡ㡥ӥ˥ŹΡΣ	the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers [5]
G03F   7/035  \	4	4	2H225	G03F   7/035	405	ޤݥꥦ쥿ǤΡΣ	the binders being polyurethanes [5]
G03F   7/037  \	4	4	2H225	G03F   7/037	649	ޤݥꥢߥϥݥꥤߥɤǤΡΣ	the binders being polyamides or polyimides [5]
G03F   7/037 501 \	5	5	2H225	G03F   7/037	925	ݥꥤߥϤΡʣͥ	the binders being polyimides or precursors thereof (7/027, 514 takes precedence)
G03F   7/038  \	2	2	2H225	G03F   7/038	2754	ðŪ˿ƿˤʤʬҲʪʣǣƣͥ表ʬҥɣǣƣʬҥ˥ಽʪǣƣˡΣ	Macromolecular compounds which are rendered insoluble or differentially wettable (G03F 7/075 takes precedence; macromolecular azides G03F 7/012; macromolecular diazonium compounds G03F 7/021) [5]
G03F   7/038 501 \	3	3	2H225	G03F   7/038	3289	¦˰´ͭ	having unsaturated groups on their side chains
G03F   7/038 502 \	4	4	2H225	G03F   7/038	287	˰´ͭ	the unsaturated groups being cinnamic groups
G03F   7/038 503 \	3	3	2H225	G03F   7/038	1193	ݥͭ	having epoxy groups
G03F   7/038 504 \	3	3	2H225	G03F   7/038	1117	ݥꥤߥϤ	the macromolecular compounds being polyimides or precursors thereof
G03F   7/038 505 \	3	3	2H225	G03F   7/038	1356	⥨ͥ륮ͥ쥸	in negative resists for high energy beams
G03F   7/038 601 \	3	3	2H225	G03F   7/038	4473	ͭͥ쥸	in chemically-amplified negative resists
G03F   7/039  \	2	2	2H225	G03F   7/039	986	ʬǽʹʬҲʪ㡥ݥŻҥ쥸ȡʣǣƣͥ表ʬҥΥ󥸥ɣǣƣˡΣ	Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F 7/075 takes precedence; macromolecular quinonediazides G03F 7/023) [5]
G03F   7/039 501 \	3	3	2H225	G03F   7/039	2132	ϸŹˤʬ̲Ρ㡥⥨ͥ륮ݥ쥸	Photo-depolymerisable macromolecular compounds, e.g. in positve resists for high energy beams
G03F   7/039 601 \	3	3	2H225	G03F   7/039	12689	ͭݥ쥸	in chemically-amplified positive resists
G03F   7/04  \	2	2	2H225	G03F   7/04	62	ʣǣƣͥˡΣ	Chromates (G03F 7/075 takes precedence) [5]
G03F   7/06  \	2	2	2H196	G03F   7/06	268	ʣǣƣͥˡΣ	Silver salts (G03F 7/075 takes precedence) [5]
G03F   7/06 501 \	3	3	2H225	G03F   7/06	352	ϥ󲽶˰²ʪνŹ糫ϺޤȤ	Silver halides as a polymerisation initiator for unsaturated compounds
G03F   7/07  \	3	3	2H196	G03F   7/07	1112	Ȼž̤ѤΡΣ	used for diffusion transfer [5]
G03F   7/075  \	2	2	2H225	G03F   7/075	202	ꥳͭʪΣ	Silicon-containing compounds [5]
G03F   7/075 501 \	3	3	2H225	G03F   7/075	1375	ʬҥꥳ󲽹ʪ㡥󥫥åץ󥰺	Low-molecular silicon compounds, e.g. silane coupling agents
G03F   7/075 511 \	3	3	2H225	G03F   7/075	1987	ʬҥꥳ󲽹ʪ	Photosensitive macromolecular silicon compounds
G03F   7/075 521 \	3	3	2H225	G03F   7/075	1106	󴶸ʬҥꥳ󲽹ʪ	Non-photosensitive macromolecular silicon compounds
G03F   7/085  \	2	2	2H225	G03F   7/085	360	¥ʬźúޤħΤ봶ʪʣǣƣͥˡΣ	Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives (G03F 7/075 takes precedence) [5]
G03F   7/09  \	2	2	2H225	G03F   7/09	882	¤κ㡥ٻΡءħΤΡʰѻٻΰ̣£ΡˡΣ	characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) [5]
G03F   7/09 501 \	3	3	2H225	G03F   7/09	1952	ٻ	Supports
G03F   7/095  \	3	3	2H225	G03F   7/095	1497	İʾδؤĤΡʣǣƣͥˡΣ	having more than one photosensitive layer (G03F 7/075 takes precedence) [5]
G03F   7/095 501 \	4	4	2H225	G03F   7/095	134	ȥ饹ءʣãţ̡	having contrast enhancement layers (CEL)
G03F   7/095 511 \	4	4	2H225	G03F   7/095	34	ϥ󲽶䴶ؤĤ	having photosensitive layers containing silver halides
G03F   7/105  \	3	3	2H225	G03F   7/105	136	Ļ뤿ʪ㡥ؼĤΡΣ	having substances, e.g. indicators, for forming visible images [5]
G03F   7/105 501 \	4	4	2H225	G03F   7/105	65	°ء°ʪء°	Metallic layers, metallic compound layers or metalised layers
G03F   7/105 502 \	4	4	2H225	G03F   7/105	111	忧޴ͭ󴶸	Non-photosensitive layers containing colourants
G03F   7/105 503 \	4	4	2H225	G03F   7/105	16	æ󴶸	Non-photosensitive layers subject to be coloured  or decoloured
G03F   7/105 504 \	4	4	2H225	G03F   7/105	99	ء㡥ȯϤΰͭ	Image receiving layers, e.g. layers containing couplers
G03F   7/11  \	3	3	2H225	G03F   7/11	628	ʤء㡥ؤĤΡΣ	having cover layers or intermediate layers, e.g. subbing layers [5]
G03F   7/11 501 \	4	4	2H225	G03F   7/11	2969	ɽءݸءʣͥ	Surface layers or protective layers (7/115 takes precedence)
G03F   7/11 502 \	4	4	2H225	G03F   7/11	1354	󴶸ʿóء󴶸쥸	Non-photosensitive planarising layers or non-photosensitive resist layers
G03F   7/11 503 \	4	4	2H225	G03F   7/11	5101	ء	Primer layers or adhesive layers
G03F   7/115  \	3	3	2H225	G03F   7/115	161	դˤƥ꡼Ϥɤ̩뤿μʤͭٻؤĤΡΣ	having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing [5]
G03F   7/12  \	1	1	2H196	G03F   7/12	926	꡼ΰǡ㡥ƥ󥷥롤¤	Production of screen printing forms or similar printing forms, e.g. stencils
G03F   7/14  \	1	1	2H196	G03F   7/14	1	װǤ¤	Production of collotype printing forms
G03F   7/16  \	1	1	2H225	G03F   7/16	1128	ˡΤ֡ʻٻκؤ۰̣£̿ŪѻٻΤؤδʪۣǣã	Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to the base for photographic purposes G03C 1/74)
G03F   7/16 501 \	2	2	2H225	G03F   7/16	2280		Coating apparatus
G03F   7/16 502 \	3	3	2H225	G03F   7/16	2157	žۤΤΤΡ㡥ԥʡ	for spin coating, e.g. spinners
G03F   7/18  \	2	2	2H225	G03F   7/18	30	֤̤ؤ	Coating curved surfaces
G03F   7/20  \	1	1	2H197	G03F   7/20	3000	ϪΤ֡ʣѼ֣̿ǣ£ˡΣ	Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B 27/00) [4]
G03F   7/20 501 \	2	2	2H197	G03F   7/20	12188	Ϫͥ륮ħΤ	characterised by exposure energy
G03F   7/20 502 \	3	3	2H197	G03F   7/20	1439	ģգ̱֡糰	Deep UV (ultraviolet ray)
G03F   7/20 503 \	3	3	2H197	G03F   7/20	3501		X-ray
G03F   7/20 504 \	3	3	2H197	G03F   7/20	4397	Ż	Electron beam
G03F   7/20 505 \	3	3	2H197	G03F   7/20	2511	졼	Laser beam
G03F   7/20 506 \	3	3	2H197	G03F   7/20	206	ӡ	Ion beam
G03F   7/20 511 \	2	2	2H197	G03F   7/20	1494	ǺΤΤ	for production of printing forms
G03F   7/20 521 \	2	2	2H197	G03F   7/20	66532	ȾƳֺΤΤ	for production of semiconductor systems
G03F   7/207  \	2	2	2H197	G03F   7/207	116	Ĵʡ㡥ưĴʡʰֹ碌ȾĴȤȹ碌ǣƣƾ֤μưĴʣǣ£Ĵ΅μưȯΤΥƥ̣ǣ£ˡΣ	Means for focusing, e.g. automatically (combination of positioning and focusing G03F 9/02; systems for automatic generation of focusing signals in general G02B 7/28; means for automatic focusing of projection printing apparatus G03B 27/34) [4]
G03F   7/207  G	2	0	2H197	G03F   7/207	21	¤	for production of printing forms
G03F   7/207  H	2	0	2H197	G03F   7/207	622	ȾƳ֤¤	for production of  semiconductor systems
G03F   7/207  Z	2	0	2H197	G03F   7/207	132	¾Τ	Others
G03F   7/213  \	2	2	2H197	G03F   7/213	5	Ʊɽ̤ΰۤʤ֤ƱѥƱϪΡʣǣƣͥˡΣ	Exposing with the same light pattern different positions of the same surface at the same time (G03F 7/207 takes precedence) [4]
G03F   7/213  G	2	0	2H197	G03F   7/213	1	¤	for production of printing forms
G03F   7/213  H	2	0	2H197	G03F   7/213	18	ȾƳ֤¤	for production of semiconductor systems
G03F   7/213  Z	2	0	2H197	G03F   7/213	18	¾Τ	Others
G03F   7/22  \	2	2	2H197	G03F   7/22	176	Ʊɽ̤ΰۤʤ֤Ʊѥ༡ϪΡʣǣƣͥˡΣ	Exposing sequentially with the same light pattern different positions of the same surface (G03F 7/207 takes precedence) [4]
G03F   7/22  G	2	0	2H197	G03F   7/22	80	¤	for production of printing forms
G03F   7/22  H	2	0	2H197	G03F   7/22	782	ȾƳ֤¤	for production of semiconductor systems
G03F   7/22  Z	2	0	2H197	G03F   7/22	169	¾Τ	Others
G03F   7/23  \	3	3	2H197	G03F   7/23	3	ΤμưŪʼʡΣ	Automatic means therefor [4]
G03F   7/23  G	3	0	2H197	G03F   7/23	5	¤	for production of printing forms
G03F   7/23  H	3	0	2H197	G03F   7/23	81	ȾƳ֤¤	for production of semiconductor systems
G03F   7/23  Z	3	0	2H197	G03F   7/23	18	¾Τ	Others
G03F   7/24  \	2	2	2H197	G03F   7/24	142	֤ɽ̤ؤϪ	Curved surfaces
G03F   7/24  G	2	0	2H197	G03F   7/24	295	¤	for production of printing forms
G03F   7/24  H	2	0	2H197	G03F   7/24	55	ȾƳ֤¤	for production of semiconductor systems
G03F   7/24  Z	2	0	2H197	G03F   7/24	256	¾Τ	Others
G03F   7/26  \	1	1	2H196	G03F   7/26	3054	νΤ֡ʣǣƣǣƣͥˡΣ	Processing photosensitive materials; Apparatus therefor (G03F 7/12-G03F 7/24 take precedence) [3,5]
G03F   7/26 501 \	2	2	2H196	G03F   7/26	634	ɾ㡥¬ʻ̣ǣ	Evaluation of photosensitive characteristics, e.g. sensitivity measurement(Test and inspection in general G01)
G03F   7/26 511 \	2	2	2H196	G03F   7/26	1865	¿إ쥸ˡ	Multi-layer resists
G03F   7/26 512 \	2	2	2H196	G03F   7/26	99	ãţ̡ʥȥ饹ءˡ	with CEL (contrast enhancement layer)
G03F   7/26 513 \	2	2	2H196	G03F   7/26	322	եȥˡСϥ󥰷κ	Lift-off processes or formation of overhang profiles
G03F   7/26 521 \	2	2	2H196	G03F   7/26	742	ˤʤ㡥Ǯðˤޥץ	Development without removal, e.g. imaging by heat or pressure, and use of microcapsules
G03F   7/28  \	2	2	2H196	G03F   7/28	95	ʴβ뤿ΤΡʣǣƣͥˡΣ	for obtaining powder images (G03F 3/10 takes precedence) [5]
G03F   7/30  \	2	2	2H196	G03F   7/30	2466	μʤѤͽΣ	Imagewise removal using liquid means [5]
G03F   7/30 501 \	3	3	2H196	G03F   7/30	3272	Τ֡㡥	Apparatus therefor, e.g. development apparatus
G03F   7/30 502 \	4	4	2H196	G03F   7/30	1002	ԥʡ	Spinner
G03F   7/32  \	3	3	2H196	G03F   7/32	3378	Ταʪ㡥ޡΣ	Liquid compositions therefor, e.g. developers [5]
G03F   7/32 501 \	4	4	2H196	G03F   7/32	649	ϿΤʪ	Compositions for rinsing or water washing
G03F   7/34  \	2	2	2H196	G03F   7/34	537	Ūž̤ˤͽ㡥ΥΣ	Imagewise removal by selective transfer, e.g. peeling away [5]
G03F   7/36  \	2	2	2H196	G03F   7/36	695	롼ףǣƣǣƣޤʤͽ㡥ήѤΡץ饺ޤѤΡΣ	Imagewise removal not covered by groups G03F 7/30-G03F 7/34, e.g. using gas streams, using plasma [5]
G03F   7/38  \	2	2	2H196	G03F   7/38	213	ͽν㡥ͽǮΣ	Treatment before imagewise removal, e.g. prebaking [5]
G03F   7/38 501 \	3	3	2H196	G03F   7/38	2057	Ϫν	Processes before exposure
G03F   7/38 511 \	3	3	2H196	G03F   7/38	1578	Ϫν	Processes after exposure
G03F   7/38 512 \	4	4	2H196	G03F   7/38	382	ʪˤ㡥벽եȽŹ	by chemicals, e.g. silylation and graft polymerisation
G03F   7/40  \	2	2	2H196	G03F   7/40	958	ͽν㡥ǮΣ	Treatment after imagewise removal, e.g. baking [5]
G03F   7/40 501 \	3	3	2H196	G03F   7/40	2413	㡥Ǯ	Hardening, e.g. heating
G03F   7/40 502 \	4	4	2H196	G03F   7/40	157	Τʪ㡥	Compositions therefor, e.g. hardening agents
G03F   7/40 511 \	3	3	2H196	G03F   7/40	1587	νϽ	Image correction or correction agents
G03F   7/40 521 \	3	3	2H196	G03F   7/40	2842	å󥰡žŪ	Secondary processes, e.g. etching, dyeing and transfer
G03F   7/42  \	2	2	2H196	G03F   7/42	2750	ΥϤΤνޡΣ	Stripping or agents therefor [5]
G03F   9/00  \	0	0	2H197	G03F   9/00	1010	ơޥե졼ࡤ̿ȡɽ̹¤ޤͤ줿ɽ̡ΰַޤϰֹ碌㡥ưŪʤΡʣǣƣͥ表̿ޥ¤ǣƣʣѼ̿ѤΤΣǣ£ˡΣ	Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically (G03F 7/22 takes precedence; preparation of photographic masks G03F 1/00; within photographic printing apparatus for making copies G03B 27/00) [4]
G03F   9/00  A	0	0	2H197	G03F   9/00	553	ưֹ碌ʤͭ	Having an automatic positioning means
G03F   9/00  G	0	0	2H197	G03F   9/00	366	¤	For production of printing forms
G03F   9/00  H	0	0	2H197	G03F   9/00	6296	ȾƳ֤¤	For production of semiconductor systems
G03F   9/00  Z	0	0	2H197	G03F   9/00	1083	¾Τ	Others
G03F   9/02  \	1	1	2H197	G03F   9/02	69	ưĴμʤȹ碌ΡʼưĴ̣ǣ£Ĵ΅μưȯΤΥƥǣ£ˡΣ	combined with means for automatic focusing (automatic focusing in general G02B 7/09; systems for automatic generation of focusing signals G02B 7/28) [4]
G03F   9/02  G	1	0	2H197	G03F   9/02	9	¤	For production of printing forms
G03F   9/02  H	1	0	2H197	G03F   9/02	427	ȾƳ֤¤	for production of semiconductor devices
G03F   9/02  Z	1	0	2H197	G03F   9/02	91	¾Τ	Others
